JPH0638419Y2 - Substrate heating device for plasma CVD device - Google Patents

Substrate heating device for plasma CVD device

Info

Publication number
JPH0638419Y2
JPH0638419Y2 JP1987008191U JP819187U JPH0638419Y2 JP H0638419 Y2 JPH0638419 Y2 JP H0638419Y2 JP 1987008191 U JP1987008191 U JP 1987008191U JP 819187 U JP819187 U JP 819187U JP H0638419 Y2 JPH0638419 Y2 JP H0638419Y2
Authority
JP
Japan
Prior art keywords
temperature
heater
chamber
substrate
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1987008191U
Other languages
Japanese (ja)
Other versions
JPS63115210U (en
Inventor
正義 今村
博 高宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP1987008191U priority Critical patent/JPH0638419Y2/en
Publication of JPS63115210U publication Critical patent/JPS63115210U/ja
Application granted granted Critical
Publication of JPH0638419Y2 publication Critical patent/JPH0638419Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【考案の詳細な説明】 産業上の利用分野 本考案はプラズマCVD(化学蒸着)装置のローデイング
チエンバにおける基板加熱装置の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION Industrial Field The present invention relates to improvement of a substrate heating device in a loading chamber of a plasma CVD (chemical vapor deposition) device.

従来技術 インライン式のプラズマCVD装置は、ローデイングチエ
ンバ(材料準備室)、プロセスチエンバ(反応室)およ
びアンローデイングチエンバ(材料取外し室)が順に直
列に接続され、基板はこの特別の雰囲気のそれぞれのチ
エンバに導入されてタクトタイム内で所定の処理がなさ
れる。そして特にローデイングチエンバでは、この限ら
れたタクトタイム内にチエンバ内の真空排気を行うとと
もに基板を室温から400℃位まで加熱する必要がある。
この急速加熱のため従来は第3図の如く、赤外線ランプ
ヒータをチエンバ内に設置していた。
Prior art An in-line plasma CVD apparatus has a loading chamber (material preparation chamber), a process chamber (reaction chamber) and an unloading chamber (material removal chamber) that are connected in series in this order, and the substrate has this special atmosphere. Introduced into each of the groups, the predetermined processing is performed within the takt time. Particularly in the loading chimba, it is necessary to evacuate the inside of the chimba and heat the substrate from room temperature to about 400 ° C. within this limited tact time.
Due to this rapid heating, an infrared lamp heater has conventionally been installed in the chamber as shown in FIG.

考案が解決しようとする問題点 この従来の加熱方式によると、複列の基板の場合にはこ
れらの基板に対し、その一方側面に赤外線が投射される
ことになり、そのため基板は一方側面と他方側面とは温
度差を生じ、しかも急速加熱のため基板に反り(第3図
3′で示す)が起り、次工程での成膜に支障を来してい
た。
Problems to be Solved by the Invention According to this conventional heating method, in the case of a double-row board, infrared rays are projected on one side of these boards, so that the board is on one side and the other side. There was a temperature difference from the side surface, and the substrate was warped due to rapid heating (shown in FIG. 3 '), which hindered film formation in the next step.

本考案は上記問題点を解決し、成膜に支障を来さないた
め、基板に反りが生じないよう両面を均一に加熱可能な
加熱装置を提供することを目的とする。
It is an object of the present invention to solve the above problems and to provide a heating device capable of uniformly heating both surfaces so that the substrate does not warp because it does not hinder film formation.

問題点を解決するための手段 上記目的を達成するため本考案の構成は次の通りとす
る。ローディングチェンバ内に設けたられたガイドレー
ル上をカートが走行可能とされ、該カートには一対の基
板が走行方向に平行な鉛直面内で直立状態に並列載置さ
れ、前記各基板の一方側面と他方側面を加熱するよう
に、前記チェンバ側壁側に各々1列ずつ、前記基板対向
面側に1列の棒状の赤外線ランプヒータが設けられ、少
なくとも前記基板対向面側のヒータは上方から垂下され
たヒータ支持部材にホルダを介して支持され、該ヒータ
支持部材には上下に多数のホルダ挿込穴が設けられ、前
記チェンバ内上部に、その位置における温度を検出する
温度検出器と、該温度検出器からの温度信号をうけて該
温度と設定温度との差に応じて電気信号を出力する温度
設定器と、該設定器からの電気信号をうけて電源から前
記ヒータへの電流を調節する電力コントローラからなる
温度調節装置が設けられたことである。
Means for Solving the Problems In order to achieve the above object, the structure of the present invention is as follows. A cart is allowed to travel on a guide rail provided in the loading chamber, and a pair of substrates are placed on the cart in an upright state in parallel in a vertical plane parallel to the traveling direction. In order to heat the other side surface, one row of bar-shaped infrared lamp heaters are provided on the chamber side wall side and one row is provided on the substrate facing surface side, and at least the heater on the substrate facing surface side is hung from above. The heater support member is supported via a holder, and the heater support member is provided with a plurality of holder insertion holes vertically, and a temperature detector for detecting the temperature at that position in the upper part of the chamber, and the temperature detector. A temperature setter that receives a temperature signal from the detector and outputs an electric signal according to the difference between the temperature and the set temperature, and an electric signal from the setter that adjusts the current from the power supply to the heater That the temperature regulating device comprising a power controller is that are provided.

作用 カートに立設されて搬送される基板に対し、該基板の一
方側、他方側両面に設けられた赤外線ランプヒータの発
熱により該基板の両面が略同温度となるように加熱され
る。そして温度調節装置によつてヒータの温度が調節さ
れる。
With respect to the substrate which is erected on the cart and is conveyed, the infrared lamp heaters provided on both sides of the substrate heat the substrate so that both sides of the substrate are heated to substantially the same temperature. Then, the temperature of the heater is adjusted by the temperature adjusting device.

実施例 以下本考案を図面に示す一実施例にもとづいて説明す
る。
Embodiment Hereinafter, the present invention will be described based on an embodiment shown in the drawings.

第1図および第2図において、ローデイングチエンバ
(以下チエンバという)1において、該チエンバ内に設
けられたガイドレール5上をカート2が搬送車輪2aを介
して走行可能とされる。前記カート2には一対の基板3,
3が直立状態に並列載置される。
1 and 2, in a loading chimba (hereinafter referred to as a chimba) 1, a cart 2 can travel on a guide rail 5 provided in the chimba via carrier wheels 2a. The cart 2 has a pair of substrates 3,
3 are placed in parallel upright.

チエンバ1内には基板3,3に沿つてヒータ4が設置され
る。しかして本考案によると、ヒータ4は基板3,3の一
方側(チエンバ側壁側)に配設される一方側ヒータ列4a
と、基板3,3の他方側(基板対向面側)に配設される他
方側ヒータ列4bとを持つ。そして各ヒータ列は上下に間
隔をおいて並列配置された複数の直型棒状赤外線ヒータ
管41からなる。これらヒータ管41は第4図、第5図に示
すように、上方から垂下されたヒータ支持部材6にホル
ダ7を介して支持されるが、前記支持部材6には上下に
多数のホルダ挿込穴6aが設けられ、ヒータ管41の取付位
置が変更可能とされる。これら各ヒータ管41には、電流
が給電主線8および支線8aを経て給電される。
A heater 4 is installed in the chimney 1 along the substrates 3, 3. Therefore, according to the present invention, the heater 4 is arranged on one side (the side wall of the chamber) of the substrates 3 and 3 and the one side heater row 4a.
And the other side heater array 4b arranged on the other side of the substrates 3 and 3 (substrate facing surface side). Each heater array is composed of a plurality of straight rod-shaped infrared heater tubes 41 arranged vertically in parallel. As shown in FIGS. 4 and 5, these heater tubes 41 are supported by a heater support member 6 suspended from above via a holder 7, and a large number of holders vertically inserted into the support member 6. The hole 6a is provided so that the mounting position of the heater tube 41 can be changed. Electric current is supplied to each of the heater tubes 41 through the main power supply line 8 and the branch line 8a.

該ヒータ4は第2図示の如く、チエンバ1の上部に設置
されたサーモカプル(熱電対)11を用いた温度調節装置
10により電流が調節される。即ち、該温度調節装置10
は、第6図に示すように、温度を検出する温度検出器11
と、該検出器からの温度信号をうけて該温度と設定温度
との差に応じて電気信号を出力する温度設定器13と、該
設定器からの電気信号をうけて電源15から前記ヒータ4
の供給電流に調節する電力コントローラ14とからなる。
As shown in FIG. 2, the heater 4 is a temperature adjusting device using a thermocouple (thermocouple) 11 installed on the upper part of the chain 1.
The current is adjusted by 10. That is, the temperature control device 10
Is a temperature detector 11 for detecting the temperature, as shown in FIG.
And a temperature setter 13 which outputs an electric signal according to the difference between the temperature and the set temperature by receiving the temperature signal from the detector, and a power source 15 to the heater 4 which receives the electric signal from the setter.
Power controller 14 for adjusting the supply current of

温度調節装置10は各ヒータ列毎に設けられて、各列毎に
温度調節を可能とすることもできる。
The temperature adjusting device 10 may be provided for each heater row so that the temperature can be adjusted for each row.

一方各列内における温度分布を調節するには、前記ホル
ダ挿込穴6aに対するホルダ7の挿込位置を変えヒータ管
間隔を変更することにより行われる。
On the other hand, the temperature distribution in each row is adjusted by changing the insertion position of the holder 7 into the holder insertion hole 6a and changing the heater tube interval.

以上において、電源15よりヒータ4に通電されると、各
ヒータ列4a,4bは列内均一でかつ、各列間も略同一量の
発熱が行われ、しかもチエンバ1内が設定温度に維持さ
れる。したがつて各基板3,3は両面からの均一な輻射熱
をうけ、従来のように曲りが生ずることなく加熱される
ことができる。
In the above, when the heater 4 is energized by the power source 15, the heater rows 4a and 4b are even in the rows and generate substantially the same amount of heat between the rows, and the inside of the chimney 1 is maintained at the set temperature. It Therefore, each of the substrates 3 and 3 receives uniform radiant heat from both sides and can be heated without bending as in the conventional case.

前記棒状ヒータ管41として直線形のほか、円形或いは蛇
行形とされたものでもよい。
The rod-shaped heater tube 41 may have a linear shape, a circular shape, or a meandering shape.

効果 本考案は以上の如く、ローデイングチエンバ内に直立状
態で搬送される複列の基板に対し、各基板の一方側およ
び他方側にそれぞれ棒除の赤外線ランプを用いたヒータ
を設置し、該基板を両側から加熱するとともに、前記チ
エンバ内上部に、その位置における温度を検出する温度
検出器と、該温度検出器からの温度信号をうけて該温度
と設定温度との差に応じて電気信号を出力する温度設定
器と、該設定器からの電気信号をうけて電源から前記ヒ
ータへの電流を調節する電力コントローラからなる温度
調節装置が設けられた。従つて、短時間で急速加熱して
も基板の変形が発生しない。したがつて以後のプラズマ
CVD処理に悪い影響を与えることがなくなつた。またヒ
ータの温度は調節装置によつて調節される。
Effect As described above, the present invention installs heaters using infrared lamps on one side and the other side of each board for a double-row board conveyed upright in the loading chamber. The substrate is heated from both sides, and a temperature detector for detecting the temperature at the position is provided in the upper part of the chamber, and an electric power is received according to the difference between the temperature and the set temperature by receiving the temperature signal from the temperature detector. There was provided a temperature adjusting device including a temperature setting device that outputs a signal and a power controller that receives an electric signal from the setting device and adjusts a current from a power source to the heater. Therefore, the substrate does not deform even if it is rapidly heated in a short time. Therefore, the subsequent plasma
It has no adverse effect on the CVD process. The temperature of the heater is adjusted by the adjusting device.

しかも、ローディングチェンバ内に設けられたガイドレ
ール上をカートが走行可能とされ、該カートには一対の
基板が走行方向に平行な鉛直面内で直立状態に並列載置
され、前記各基板の一方側面と他方側面を加熱するよう
に、前記チェンバ側壁側に各々1列ずつ、前記基板対向
面側に1列の棒状の赤外線ランプヒータが設けられ、少
なくとも前記基板対向面側のヒータは上方から垂下され
たヒータ支持部材にホルダを介して支持され、該ヒータ
支持部材には上下に多数のホルダ挿込穴が設けられてい
る。
Moreover, the cart is allowed to travel on a guide rail provided in the loading chamber, and a pair of substrates are placed on the cart in an upright state in parallel in a vertical plane parallel to the traveling direction. In order to heat the side surface and the other side surface, one row of rod-shaped infrared lamp heaters are provided on the chamber side wall side and one row is provided on the substrate facing surface side, and at least the heater on the substrate facing surface side hangs down from above. The heater support member is supported via a holder, and the heater support member is provided with a large number of holder insertion holes vertically.

従って、一方のチェンバ側壁側のヒータの熱は一方の基
板で遮られ、他方の基板にほとんど影響を与えない。こ
のため、温度制御がやり易い。また、対向面側ヒータは
1列であり、その取付位置が変更可能であるため、この
ヒータ列内での加熱状態の均一性を調節できることとな
った。
Therefore, the heat of the heater on the side wall of one chamber is shielded by one substrate and hardly affects the other substrate. Therefore, temperature control is easy. Further, since the opposing surface side heater is in one row and its mounting position can be changed, the uniformity of the heating state in this heater row can be adjusted.

【図面の簡単な説明】[Brief description of drawings]

第1図は本考案の一実施例を示す正面図、第2図は側面
図、第3図は従来の加熱装置正面図、第4図は要部拡大
正面図、第5図は第4図の側面図、第6図は温度調節装
置のブロツク図である。 1……ローデイングチエンバ、2……カート、3……基
板、4……ヒータ、41……ヒータ管、5……ガイドレー
ル、6……ヒータ支持部材、7……ホルダ、10……温度
調節装置
FIG. 1 is a front view showing an embodiment of the present invention, FIG. 2 is a side view, FIG. 3 is a front view of a conventional heating device, FIG. 4 is an enlarged front view of essential parts, and FIG. 5 is FIG. FIG. 6 is a block diagram of the temperature control device. 1 ... Loading chain, 2 ... Cart, 3 ... Substrate, 4 ... Heater, 41 ... Heater tube, 5 ... Guide rail, 6 ... Heater support member, 7 ... Holder, 10 ... Temperature control device

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】ローディングチェンバ内に設けられたガイ
ドレール上をカートが走行可能とされ、該カートには一
対の基板が走行方向に平行な鉛直面内で直立状態に並列
載置され、前記各基板の一方側面と他方側面を加熱する
ように、前記チェンバ側壁側に各々1列ずつ、前記基板
対向面側に1列の棒状の赤外線ランプヒータが設けら
れ、少なくとも前記基板対向面側のヒータは上方から垂
下されたヒータ支持部材にホルダを介して支持され、該
ヒータ支持部材には上下に多数のホルダ挿込穴が設けら
れ、前記チェンバ内上部に、その位置における温度を検
出する温度検出器と、該温度検出器からの温度信号をう
けて該温度と設定温度との差に応じて電気信号を出力す
る温度設定器と、該設定器からの電気信号をうけて電源
から前記ヒータへの電流を調節する電力コントローラか
らなる温度調節装置が設けられたことを特徴とするプラ
ズマCVD装置の基板加熱装置。
1. A cart is allowed to travel on a guide rail provided in a loading chamber, and a pair of substrates are mounted on the cart in an upright state in parallel in a vertical plane parallel to the traveling direction. In order to heat one side surface and the other side surface of the substrate, one row of rod-shaped infrared lamp heaters are provided on the side wall of the chamber, and one row of rod-shaped infrared lamp heaters are provided on the side of the substrate facing surface. A heater support member hung from above is supported via a holder, and the heater support member is provided with a plurality of holder insertion holes at the top and bottom, and a temperature detector for detecting the temperature at that position in the upper part of the chamber. And a temperature setter that receives an electric signal from the temperature detector and outputs an electric signal according to the difference between the temperature and the set temperature, and an electric signal from the setter to supply electric power to the heater. Substrate heating apparatus of a plasma CVD apparatus characterized by temperature control device comprising a power controller for adjusting the flow is provided.
JP1987008191U 1987-01-22 1987-01-22 Substrate heating device for plasma CVD device Expired - Lifetime JPH0638419Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987008191U JPH0638419Y2 (en) 1987-01-22 1987-01-22 Substrate heating device for plasma CVD device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987008191U JPH0638419Y2 (en) 1987-01-22 1987-01-22 Substrate heating device for plasma CVD device

Publications (2)

Publication Number Publication Date
JPS63115210U JPS63115210U (en) 1988-07-25
JPH0638419Y2 true JPH0638419Y2 (en) 1994-10-05

Family

ID=30792345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987008191U Expired - Lifetime JPH0638419Y2 (en) 1987-01-22 1987-01-22 Substrate heating device for plasma CVD device

Country Status (1)

Country Link
JP (1) JPH0638419Y2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159723A (en) * 1985-01-07 1986-07-19 Hitachi Ltd Vapor growth method

Also Published As

Publication number Publication date
JPS63115210U (en) 1988-07-25

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