JPH0644941A - Charged beam processing apparatus and method - Google Patents

Abstract

(57) [Abstract] [PROBLEMS] To provide a charged beam processing apparatus and method capable of preventing performance deterioration of a charged particle detector due to processing gas. [Structure] A shutter mechanism is provided in front of the charged particle amplifying unit, and the inside of the charged particle detector is exhausted or differentially exhausted. The charged particle detector is turned on during observation and the shutter is opened, and the charged particle detector is opened during processing. The shutter is closed or turned off, and the inside of the charged particle detector is exhausted.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle detector or a charged particle beam beam treatment for performing reactive etching, beam assisted deposition or the like using a charged beam and a processing gas, and more particularly to a charged particle detector using a processing gas. The present invention relates to a charged beam processing apparatus and method suitable for preventing performance degradation of the same.

[0002]

2. Description of the Related Art In recent years, in semiconductor devices such as LSIs, in order to achieve higher integration and higher functionality, wirings and elements have been multi-layered. Therefore, for the purpose of debugging the LSI design and analyzing defects in the manufacturing process, there is an increasing demand for circuit correction in a short time by cutting the wiring on the chip or connecting an arbitrary part. In such circuit modification, it is necessary to perform processing on several tens of locations on one LSI, and the processing must be performed at high speed with a high yield of nearly 100%.

Among them, as a method for cutting the wiring, a sputter processing method has hitherto been used in which atoms of a wiring material are ejected by a focused ion beam. However, this method has a slow processing speed and a workpiece to be processed. There were problems such as low selectivity to the material and sputtered atoms adhering to the side surface.

On the other hand, if chemically reactive etching in which a reactive gas and a charged beam such as a focused ion beam or an electron beam are combined is used, high speed processing which is several tens of times faster than the above-mentioned sputter processing is possible. By selecting the type of reactive gas, it is possible to increase the selectivity for the lower layer of the layer to be processed, and it is possible to perform accurate processing even on a sample with severe irregularities without damaging the lower layer.

However, when the reactive gas is introduced, the charged particle detector for image detection is exposed to the reactive gas by diffusion, which causes corrosion of the active surface of the charged particle detector. As a result, the performance of the charged particle detector is deteriorated, and there is a problem that frequent replacement is required.

In order to solve this problem, a shutter mechanism is provided in front of the secondary particle amplification section of the secondary particle detector.
JP-A-3-245529 has been proposed.

[0007]

In the above-mentioned proposed prior art, after the treatment with the reactive gas is performed, the secondary particle detector 2 is not fully exhausted.
When the shutter on the front side of the secondary particle amplification unit is opened, the reactive gas enters the secondary particle detector, but when the shutter is closed to perform the process again, the reactive gas is trapped in the secondary particle detector. It will be 2
There is a problem that the performance deterioration of the secondary particle detector cannot be prevented. Further, by repeating the opening and closing of the shutter, the reactive gas remains in the secondary particle detector in the same manner, and the problem of performance deterioration cannot be avoided. Further, if the processing gas cannot be completely shut off even if this shutter mechanism is provided due to a structural problem, the processing gas leaks into the leak detector through a slight clearance, which causes performance deterioration due to corrosion. Also, due to the gas released from the material and the gas leaking from the outside,
If the pressure exceeds the allowable operating vacuum degree of the secondary particle detector, the detector may be damaged due to discharge or the like.

In view of the above problems of the prior art, it is an object of the present invention to provide a charged beam processing apparatus and method capable of preventing performance deterioration of a charged particle detector due to processing gas.

[0009]

In order to achieve the above object, the present invention provides a shutter mechanism on the front surface of a charged particle amplifying section, and further has a structure capable of evacuating or differentially evacuating the inside of a charged particle detector. At times, the charged particle detector is turned on and the shutter is opened, at the time of processing, the charged particle detector is turned off or as it is, and the shutter is closed to exhaust the inside of the charged particle detector.

Further, in the above structure, at least one of a mechanism for blowing an inert gas onto the front surface of the charged particle detector and the sample surface and a mechanism for adsorbing the processing gas by cooling is used in combination.

[0011]

In the above-described structure, the shutter mechanism is provided to exhaust or differentially exhaust the inside of the charged particle detector.
When observing, turn on the charged particle detector and open the shutter, turn off the charged particle detector when supplying the processing gas, close the shutter and exhaust the inside of the charged particle detector to prevent the processing gas from entering the inside of the detector. Even if it enters, the gas can be immediately exhausted, so that the deterioration of the secondary particle detector can be prevented. Also, by turning off the secondary particle detector when supplying the processing gas, it remains inside,
Alternatively, the inflowing gas can be prevented from adhering to and reacting with the active surface of the secondary particle amplifying section.

Further, in addition to the shutter, 2
An apparatus using a mechanism for blowing an inert gas onto the front surface of the secondary particle detector or the sample surface or a mechanism for adsorbing the processing gas by cooling can further prevent the processing gas from flowing into the charged particle detector.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Various embodiments of the present invention will be described below in order with reference to the drawings. In the drawings, the same reference numerals indicate the same or the same functions. First, a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a device configuration diagram of the first embodiment, FIG. 2 is a diagram showing an operation sequence of each element at the time of observing and processing a sample, and FIG. 3 is a diagram showing a main part of the device at the time of observing. Is a side sectional view, (b)
4A is a view taken along the line bb of FIG. 4A, FIG. 4 is a view showing a main part of the apparatus during processing, FIG. 4A is a side sectional view, and FIG. 4B is a view taken along the line bb of FIG. is there.

In FIG. 1, 1 is an ion source, 2 is an ion beam, 3 is an extraction electrode, and an ion beam 2 extracted from the ion source 1 through an electrode 3 is caused by a front focusing lens 4 and a rear focusing lens 6. Focus and aperture 5,7
And is deflected by the deflector electrode 8. These ion beam optical systems are provided in the IB chamber 26 and controlled by the ion beam controller 33.

Reference numeral 25 is a stage provided in the main chamber 28, and 24 is a sample mounted on the stage 25. The sample 24 is connected to the reactive gas cylinder 18 via the flow rate adjusting valve 16. A reactive gas can be blown by the nozzle 15.

Reference numeral 9 is an IB chamber 26 and a main chamber 2
The optical path pipe provided between the optical path pipe 9 and
Has a sufficiently small conductance for the passage of the ion beam 2. The IB chamber 26 is via a valve 29, the main chamber 28 is via a valve 31,
Differential exhaust is performed by an exhaust device (not shown). Thereby, even if the processing gas is introduced into the main chamber 28, the inside of the IB chamber 26 can be kept in a high vacuum.

To detect the processing position of the sample 24, the process shown in FIG.
(A), as clearly shown in FIG. 4 (a), the ion beam 2
A scanning ion microscope image (hereinafter referred to as SIM image) in which the secondary ions generated by the irradiation of are simultaneously detected is used. In this embodiment, a micro channel plate (Micro Channel Plate) is used as the secondary particle amplification unit.
e, hereinafter referred to as MCP) 11 is used. Lead-in electrode 1
2 draws secondary particles into MCP11,
The secondary electrode amplified by is detected by the detection electrode 10.
The optical path pipe 9 is grounded so that the electric field generated by each of these electrodes does not affect the ion beam 2.

A shutter 13 is provided between the MCP 11 and the lead-in electrode 12 so as not to expose the MCP 11 to the reactive gas. The shutter 13 is a push rod driven by a driving device 14 provided outside the main chamber 28. Driven via 40. A cross-sectional view of an example of the driving device 14 is shown in FIG. In FIG. 12, 54 is an air cylinder connected to the push rod 40, which is fixed to the housing 53. The push rod 40 is moved by the air cylinder 54 in the direction of the arrow in the figure. At this time, the bellows 55 expands and contracts to maintain the vacuum in the main chamber 28. The shutter 13 and the MCP 11 are arranged so that the opening / closing of the shutter 13 does not change the electric field in the direction of the sample 24 generated by the drawing electrode 12 to which a predetermined voltage is applied.
Must be provided between the two to allow the ion beam 2 to pass therethrough. When the shutter 13 is closed, the MCP
Since the MCP chamber 27 that surrounds 11 is sealed, even when the processing gas is used in the main chamber 28,
The inside of the MCP chamber 27 can be maintained in a high vacuum by opening the valve 30 and exhausting air by an exhaust device (not shown).

Reference numeral 19 is an electron gun for neutralizing the positive charges of the ion beam 2 accumulated on the surface of the sample 24. An electron source 20, a lens 21, a deflection electrode 22, and an orifice 23 are provided in the electron gun 19, and the electron beam output from the electron source 20 is focused by the lens 21.
The light is deflected by the deflection electrode 22 and supplied onto the sample 24. The interior of the electron gun 19 is constantly differentially exhausted via a valve 32 by an exhaust device (not shown). This can prevent the electron source 20 from being deteriorated by the processing gas. The electron beam is focused to a diameter of about 0.5 mm at the position of the orifice 23, passes through the orifice 23 having a hole diameter of about 1.0 mm, and is squeezed again at the second stage of the lens 21 as shown in FIG. 1 mm, beam current 1
An electron beam of about 00nA can be obtained. Further, the main chamber 28 is 1.0 × 10 to ⁴ Torr due to the orifice 23.
At this time, the ambient pressure of the electron source 20 can be suppressed to about 1.0 × 10 to ⁶ Torr, and the life can be extended about 100 times.

Here, 34 is a power source for the electron gun, 35 is a stage controller for controlling the stage 25, 36 is a controller for the flow rate adjusting valve 16 for supplying the reactive gas and the valve 17 for exhausting, and 37 is a charged particle detector. A controller for control and shutter opening / closing control, and each controller including the ion beam controller 33 is controlled by a computer 38.

Next, an example of the control process when the apparatus of the first embodiment is used and the operation of each element in the apparatus will be described.

First, while observing the SIM image of the sample 24, the stage 25 is moved by the stage controller 35 to set the processing position and the processing region of the sample 24. At this time, V ₁ is applied to the MCP 11 in the front stage, V ₂ is applied to the rear stage, and V ₀ is applied to the lead electrode 12. As a result, the secondary ions output from the sample 24 are attracted to the electrode 1
It accelerates by 2, it amplifies by MCP11, and this is detected by the detection electrode 10. The shutter 13 is provided on both the left and right sides of the optical path pipe 9 so as to be openable and closable, and is shown in FIG. 3 so that secondary ions (+ in a circle in FIG. 3A) can pass therethrough. Store on both sides as shown to bring it to the "open" state. In order to prevent the charge-up of the sample 24 due to the ion beam 2 during processing, the electronic shower is shown in FIG.
(A) or the electron indicated by reference sign e in FIG. 4 (a) is always supplied through the electron gun 19. This is to prevent the setting of the processing position and the processing region during processing and during observation from shifting due to changes in the electric field. The reactive gas closes the valve 16 and opens the valve 17 to exhaust the inside of the nozzle 15 by an exhaust device (not shown).
Here, in the MCP chamber 27, the valve 30 is closed and exhaust is not performed. As described above, the optical path pipe 9 is always grounded so that the ion beam 2 is not affected by the electric field due to the voltage application to the MCP 11 and the drawing electrode 12. The shield cover 41, which does not change the potential distribution due to the opening and closing of the shutter 13, is also always grounded.

After setting the processing position and the processing area in this manner, the shutter 13 is moved from the storage position to the optical path pipe 9 side to be in the "closed" state shown in FIG. After a time t ₁ (shown in FIG. 2) required until the shutter 13 is completely closed, the flow rate adjusting valve 16 is opened and the valve 17 is closed to supply the reactive gas from the nozzle 15 onto the sample 24. In this case, as for the supplied reactive gas, as shown in FIG. 4, the gap between the upper surface of the shutter 13 and the inner wall surface of the main chamber 28 is blocked by the O-ring 42, and the left and right mating surfaces of the shutter 13 and Since the gap between the shutter 13 and the optical path pipe 9 is blocked by the seal 43, the reactive gas that is about to flow into the MCP chamber 27 from the main chamber 28 is O-ring 42 and the seal 43.
Therefore, it is possible to prevent the deterioration of the MCP 11 with certainty. By closing the shutter 13, the inside of the MCP chamber 27 is hermetically closed. Therefore, the gas slightly leaking into the MCP chamber 27 is opened by opening the valve 30.
The inside of 7 is evacuated and removed. In this way, when the blocking of the reactive gas is complete, it is not necessary to set the applied voltage to the MCP 11 to 0V, but when it is incomplete, it must be set to 0V. The blocking performance of the reactive gas depends on the pressing force of the O-ring 42 and the seal 43 when the shutter 13 is closed. The pressing force of the O-ring 42 is determined by the vertical position of the shutter 13, and the pressing force of the seal 43 can be adjusted by selecting the pressure of the air cylinder 54.

Next, the voltage applied to the pull-in electrode 12 is adjusted so that the machining position and the machining region set previously are not displaced by changing the potential distribution on the sample 24.
Even after closing 3, the voltage is continuously applied. The shield cover 41 shown in FIG. 3 and the like is always grounded. In order to make the electric field in the vicinity of the sample 24 the same as when the shutter is “open”, it is also effective to provide an electrode 46 on the shutter 13 and apply a voltage. However, in that case, an insulating material (Teflon, Macor, Delrin, etc.) is sandwiched between the shutter 13 and the electrode 46 for insulation. On the other hand, the electron gun 19 is always differentially evacuated as described above, and the reactive gas that enters the electron gun 19 through the orifice 23 is immediately evacuated through the valve 32. The reactive gas concentration around 20 can be suppressed low, and the performance deterioration of the electron source 20 is prevented.

In the above state, the sample 24 is reactively etched by the reactive gas activated by the ion beam 2. Then, after the treatment is performed to a desired depth based on the treatment speed obtained in advance by an experiment, the flow rate adjusting valve 16 is closed, the valve 17 is opened, and the residual reactive gas is removed from inside the main chamber 28 by M
Less than the allowable operating vacuum of CP11 (approximately 5.0 × 10 ~ ⁶ Tor
Evacuate until r) (required exhaust time is t ₂ shown in FIG. ₂ ). After that, the shutter 13 is opened, the exhaustion in the MCP chamber 27 is stopped at the same time, and the next processing position is observed and positioned. After that, this operation is repeated. These series of operations are controlled by the computer 38.

In the control process, the machining position and the machining region are determined for one machining, and the machining is repeated. However, when a plurality of machining positions are close to each other, one observation makes one or more machining positions. Also, the SIM image of the processing area can be registered in the image memory, and processing at a plurality of locations can be performed based on this memory.

According to the present embodiment, MC using a reactive gas is used.
Performance deterioration of P11 can be prevented, and stable device operation can be performed.

Next, a second embodiment of the present invention will be described with reference to FIGS. FIG. 5 is a sectional view (1) of a main part of the device during processing, FIG. 6 is a diagram (2) showing a main part of the device during processing, (a) is a side sectional view,
7B is a view taken along the line bb in FIG. 7A, and FIG. 7 is a diagram showing an operation sequence of each element during observation and processing of the sample.

In FIG. 5, reference numeral 44a denotes a labyrinth provided at a position corresponding to the seal 43 shown in FIG. 4 and can have a simple structure. 44b is a labyrinth provided at a position corresponding to the O-ring 42 shown in FIG. By using the labyrinths 44a and 44b, it is difficult for the reactive gas to enter the MCP chamber 27, and the conductance can be made sufficiently small. Then, even when the shutter 13 is closed, the reactive gas is not completely blocked, and the inside of the MCP chamber 27 is differentially exhausted to prevent the deterioration of the MCP 11. The control process of this system is shown in FIG. The difference from FIG. 2 is that
A voltage is applied to the MCP 11 at the time of machining positioning, but a slight amount of reactive gas enters the MCP chamber 27 at the time of machining, so that the voltage is not applied to the MCP 11 to prevent deterioration.

FIG. 6 shows a system in which a standard O-ring and a labyrinth structure are combined. The gas inflow from the upper surface side of the shutter 13 is blocked by the O-ring 42 as in FIG. 4, but the gas inflow from the lower surface side of the shutter 13 is the O-ring 45 around the optical path pipe 9 and also in the shutter 13. The left and right mating surfaces are blocked by a labyrinth 44a 'having the same structure as the labyrinth 44a in FIG. In this case, the control process is the same as in FIG. This embodiment is simple and effective when the reactivity of the processing gas is low or when the supply amount of the processing gas is small.

Next, a third embodiment of the present invention will be described with reference to FIGS. FIG. 8 is a diagram showing an operation sequence of each element during observation / processing of a sample, FIG. 9 is a sectional view of a main part of the apparatus at the time of observation, and FIG. 10 is a sectional view of a main part of the apparatus at the time of processing.

In this embodiment, as shown in FIG. 9, the lower portion of the IB chamber 26 is formed to have the same width as the main chamber 28,
Another set of shutters 13b (upper stage shutters) of the same construction is provided in the lower part to form two sets of a lower stage shutter and an upper stage shutter, and the MCP chamber 27 is deleted.
Both shutters have a hole through which the ion beam 2 can pass, and the outer diameter portion of the optical path pipe 9 is sealed with a seal 49 having the same structure as the seal 43. The control process of this system is shown in FIG. In FIG. 8, first, in the first processing positioning, the lower shutter 13a
Is opened and the upper shutter 13b is closed.
After the positioning is completed, the lower shutter 13a starts to be closed, and after a time t ₁ required for completely closing the shutter 13a, the upper shutter 1
Open 3b. This is because when the two shutters are opened at the same time, differential evacuation cannot be performed if the conductance of the passage connecting the IB chamber 26 and the main chamber 28 is large. After the time t ₁ from when the upper shutter 13b starts to be opened to when it is completely opened, the first hole machining is started. After the hole processing is completed, the reactive gas in the main chamber 28 is exhausted to the allowable vacuum degree of the MCP 11 for the time t ₂ . Then, close the upper shutter 13b,
The lower shutter 13a is opened at the same time difference as described above, and the second
Performs machining positioning.

In the third embodiment, the MCP chamber 27 is not provided. However, the MCP chamber 27 may be provided as in the first embodiment. In this case, the inside of the MCP chamber 27 is the same. Exhausted during observation and processing.

Next, a fourth embodiment of the present invention will be described with reference to FIG.
Will be described with reference to. FIG. 11 is a view showing a main part of the apparatus at the time of processing, (a) is a side sectional view, (b) is (b) of (a).
FIG.

In FIG. 11, reference numeral 50 designates a shutter having a passage 51 for the refrigerant, which is a hole having a small diameter, and is provided in the main chamber 28 at the same position as the shutter 13 instead of the shutter 13. A refrigerant substance such as liquid N ₂ is supplied into the passage 51, cools the surface of the shutter 50 to a temperature below the evaporation temperature of the reactive gas by heat conduction, and the reactive gas supplied from the nozzle 15 is supplied to the shutter 50. When it hits, it is adsorbed to further reduce the inflow amount of the reactive gas into the MCP chamber 27. Further, reference numeral 52 is a nozzle connected to a valve and an inert gas cylinder (not shown). The reactive gas remaining on the surface of the sample 24 and its periphery is removed from the nozzle 52 by the inert gas from the nozzle 52 when moving from the processing to the observation. By blowing off the gas, the reactive gas becomes sample 2
Adhesion to the active surface of No. 4 is more surely prevented.

A fifth embodiment will be described with reference to FIG. FIG. 13 shows an operation sequence of each element when observing and processing the sample. The device configuration of this embodiment is the same as the first embodiment.
Is the same as the embodiment described above. In the first embodiment,
When observing the sample 24, the shutter 13 is opened and the MCP chamber 27 is opened.
Although the inside is not exhausted, if the conductance of the gas inflow / outflow portion between the MCP chamber 27 and the main chamber 28 is sufficiently small, the MCP chamber 27 and the main chamber 28 are
The pumps do not attract each other even if they are differentially exhausted independently. Therefore, in this embodiment, the inside of the MCP chamber 27 is differentially exhausted even during observation. Here, as in the second embodiment, the voltage application to the MCP 11 is applied during processing as shown in FIG.
It does not need to be carried out as in 3, or may be carried out.

FIG. 14 shows another embodiment of the seal 43 for sealing the gap between the shutter 13 and the optical path pipe 9. The seal 43 normally has a rectangular cross section, but the seal 43a having a pointed cross section as shown in FIG. 14 (a) or a rounded tip surface as shown in FIG. 14 (b). The attached cross-section seal 43b may be used. For sealing the mating surfaces when the left and right shutters 13 are closed, a flat mating surface and either of FIG. 14A or FIG. 14B are used in combination, or FIG.
The cross-sections are used so that they are pressed against each other.
By properly adjusting the pressing force of the seal, it is possible to improve the hermeticity of the sealed space and the wear resistance of the seal.

FIGS. 15 and 16 are explanatory views of the seal mechanism, and show another embodiment which replaces the O-ring 42 of the first embodiment. FIG. 15 is an explanatory view of the state when observing the sample.
(A) is the side sectional view, (b) is the bb arrow view of (a), FIG. 16 is a state explanatory view at the time of processing, (a) is the side sectional view, (b) is (a) ) Is a bb arrow view, and (c) is a cc arrow cross section of (a). In the first embodiment, the gas flowing from the upper surface of the shutter 13 is supplied to the O-ring 4
Although it is blocked by the flat seal according to 2, in this embodiment,
On the other side of the shutter 13 (the outer wall surface of the MCP chamber 27 in this embodiment), a cylindrical surface is provided so that the O-ring 58 can be housed, and this cylindrical surface is used to seal the cylindrical surface. An inflow from the upper surface of the shutter 13 is blocked by an O-ring 58, and an inflow from the outer periphery of the optical path pipe 9 is blocked by an O-ring 59 having the same configuration as the O-ring 58. Further, as shown in FIG. 16C, L-shaped seals 60 are attached to the shutters 13 so as to be symmetrical and opposite to each other at the portions where the shutters 13 are closed. The inflow is blocked by the portion a in the figure, and the inflow from the side surface of the shutter 13 is blocked by the portion b in the figure. The seal structure of the present embodiment can be applied to the shutters of the first, third and fourth embodiments.

17 and 18 are explanatory views of the seal mechanism.
Another embodiment of the L-shaped seal 60 of FIGS. 15 and 16 will be described. FIG. 17 is a state explanatory view at the time of observing a sample, (a) is a side sectional view thereof, (b) is a sectional view taken along the line bb of (a), and (c) is a sectional view taken along the line cc of (a). FIG. 18 is an explanatory view of a state at the time of processing, (a) is a side sectional view thereof,
(B) is a bb arrow line view of (a). In FIGS. 15 and 16, two types of O-rings and four L-shaped seals 60 are used, but in the present embodiment, a structure is adopted in which these are combined into one. That is, FIG. 17 and FIG.
As shown in FIG. 8, a sealing material 61, which is a combination of the four L-shaped seals 60, is fixed around the optical path pipe 9. Therefore, it is not necessary to attach a seal to the shutter 13.

19 and 20 are explanatory views of the seal mechanism.
A modified example of the seal 61 integrally fixed around the optical path pipe 9 in FIGS. 17 and 18 is shown. FIG. 19 is an explanatory view of a state at the time of observing a sample, (a) is a side sectional view thereof,
(B) is a bb arrow view of (a), FIG. 20 is a state explanatory view at the time of processing, (a) is a side sectional view thereof, (b) is a bb arrow view of (a), (C) is a sectional view taken along the line cc of (a). In FIG. 17 and FIG. 18, the integrated seal 61 is divided into the shutters 13 on both sides in the present embodiment, on the contrary. That is, as shown in FIG. 19 (b), semi-circular a and b parts having two coaxially different diameters, and FIG.
Seals 62 each having an L-shaped c portion integrated therein such as 0 (c) are attached to the shutters 13 on both left and right sides. Therefore, contrary to the embodiments of FIGS. 17 and 18, no seal is attached to the optical path pipe 9 side.

FIG. 40 shows the gas shutoff performance when the sealing mechanism shown in FIGS. 19 and 20 is used, and M in this case.
FIG. 41 shows the transition of the amplification factor by CP11. In FIG. 40, when the shutter 13 is closed and the reactive gas is introduced into the main chamber 28 by 10 sccm, the main chamber 2
Although the pressure inside 8 was 0.7 Pa, the pressure inside the MCP chamber 27 was able to maintain the initial pressure of 1.0 × 10 ³ Pa. Further, in FIG. 41, the M when the shutter 13 of the sealing mechanism is applied to an actual processing sequence.
The CP amplification factor showed almost no change in its transition, so that no deterioration of MCP11 was observed. This means that the life is extended several tens of times as compared with the case without the shutter mechanism.

21 and 22 are explanatory views of the seal mechanism.
17 and 18 show modified examples of the portion for blocking the inflow of gas from the upper surface of the shutter 13 in FIGS. FIG. 21 is a state explanatory view at the time of observing a sample, (a) is a side sectional view thereof, (b) is a sectional view taken along the line bb of (a), and (c) is a sectional view taken along the line cc of (a). 22 is a state explanatory view at the time of processing, (a) is a side cross-sectional view thereof, and (b) is a bb arrow view of (a). In this embodiment, only the portion for blocking the inflow of gas from the upper surface of the shutter 13 in FIGS. 17 and 18 is attached to both sides of the shutter 13 in a divided manner. That is, the left and right shutters 13 have
A semi-circular seal 63 is attached as shown in FIG. 21 (b), and a seal 6 having a shape in which two L-shaped ones are attached to both ends of the ring 6
4 is fixed to the optical path pipe 9 side.

23 and 24 are explanatory views of the seal mechanism, showing a modification of the seal 43 in the first embodiment. FIG. 23 is an explanatory view of the state at the time of observing the sample, (a)
2 is a side sectional view thereof, (b) is a view taken along the line bb of FIG.
4 is a state explanatory view at the time of processing, (a) is a side sectional view thereof, and (b) is a bb arrow view of (a). In this embodiment, a seal 43 attached to the shutter 13 is provided for shutting off gas from the outer circumference of the optical path pipe 9 in the first embodiment.
While the structure is pressed against the outer circumference of the optical path pipe 9 to seal the cylindrical surface, this embodiment adopts a structure for sealing the flat surface. As shown in FIG. 23 (b), the seal 65 has a shape in which two concentric rings are connected by a portion of a band extending in the radial direction. When the shutter 13 is closed,
As shown in FIG. 24A, the upper surface of the shutter 13 and the seal 65
Since it is in contact with the lower surface of the shutter 13, it is possible to prevent gas inflow from the b portion of the upper surface of the shutter 13 and gas inflow from the outer periphery of the optical path pipe 9 and the c portion of the joint of the left and right shutters 13.

25, 26, and 27 are explanatory views of the shutter mechanism and its sealing mechanism, and show an embodiment in which the left and right shutters 13 in FIGS. 23 and 24 are shutters of only one side. 25A and 25B are explanatory views of a state at the time of observing a sample. FIG. 25A is a side sectional view thereof, and FIG.
-B arrow view, FIG. 26 is a plan view of the seal portion when transitioning from sample observation to processing, FIG. 27 is a state explanatory view during processing, (a) is a side sectional view thereof, and (b) is ( b- in a)
FIG. In this embodiment, first, at the time of observation, the shutter 66 is stored on the right side as shown in FIG. The shutter 66 has an optical path pipe 9 as shown in FIG.
A seal 67 provided with a circular hole 67a in which is accommodated is fixed. When the shutter 66 is closed, the optical path pipe 9 becomes an obstacle, so the seal 67 is cut to the circular hole 67a.
Put b. The seal 67 in the process of closing the shutter 66 becomes the state shown in FIG. 26, and when the shutter 66 is completely closed, it becomes the state shown in FIG. 27 (b).

FIGS. 28 and 29 are explanatory views of the shutter mechanism and the seal mechanism thereof. Only one shutter in FIGS. 25, 26 and 27 is used, but the seal is not attached to the shutter. Here is an example: FIG. 28 is a state explanatory view at the time of observing a sample, (a) is a side sectional view thereof, (b) is a bb arrow view of (a), and FIG. 29 is a state explanatory view at the time of processing, (a) Is a side sectional view thereof, and (b) is a bb arrow view of (a). In the embodiment shown in FIGS. 25 to 27, the seal 67 is attached to the shutter 66, but in this embodiment, no seal is attached to the shutter 66 side, and as shown in FIG. 9
And a beam 68 is provided at a position facing the shutter 66.
A seal 69 is attached so as to wind around the beam 68 and the optical path pipe 9. As a result, the gas flowing in from the lower surface of the shutter 66 can be blocked as shown in FIG. It is also possible to leave only the beam 68 as it is and make the seal 69 U-shaped so as to be attached to the shutter 66 side.

FIG. 30 shows a modification of the position of the lead-in electrode 12, and is a cross-sectional view of the main part of the apparatus at the time of processing with the same structure as that of FIG. 20 (a). In this embodiment, the MCP 11 has a structure which is usually commercially available, that is, the lead-in electrode 12 is M.
It is located directly in front of the CP 11 and is arranged above the shutter 13. The configurations of FIGS. 1 to 29 are
The pull-in electrode 12 is arranged below the shutter 13 so that the electric field on the sample 24 and the landing point of the ion beam 2 are not changed as much as possible by opening and closing the shutter 13. However, if the dimensions, voltage, and arrangement of the attracting electrodes are determined in advance so that the landing points do not shift due to the electric field analysis and the trajectory tracking of the ion beam 2, the landing points do not shift even if the electric field on the sample 24 changes. There is.

FIG. 31 shows the shutter 1 in FIG.
3 is a modification of 3 and the optical path pipe 9. FIG. 29 is a state explanatory view at the time of processing, (a) is a side cross-sectional view thereof, and (b) is a bb arrow view of (a). In this embodiment as well, as in the case of FIG. 30, the design is made so that the landing point of the ion beam 2 is not displaced by opening and closing the shutter 13. Unlike each of the above-described embodiments, the optical path pipe 9 does not interfere with the shutter 13, so that the shutter 13 may have a simple structure. Although the O-rings 42 and 94 are fixed to the shutter 13 side, they can be fixed to the opposite side. When the ion beam 2 is directly applied to the O-ring 94, if the O-ring is an insulating material, the O-ring is charged up, and the orbit is bent. Since it is difficult to calculate this charge-up amount, it is difficult to predict the trajectory. Therefore, O
The ring 94 must be invisible from the ion beam 2 directly. When observing the sample 24, the shutter 1
3 is moved to the right side in the drawing so that the center of the circular hole-shaped portion a and the center of the ion beam 2 are aligned with each other so that the charged particles can be withdrawn.

32A and 32B show another embodiment of the drive mechanism for the shutter 13. FIG. 32A is a side view for explaining the state during sample observation, and FIG. 32B is a side view for explaining the state during processing. In the first embodiment, the drive device as shown in FIG. 12 was used, but instead a linear lead-in terminal for vacuum or a rotary lead-in terminal (in this case, a ball screw for converting a rotary motion into a linear motion, etc.) is used. (Required) can also be used. However, it is preferable to adjust the pressing force of the shutter 13 in order to improve the sealing characteristics, and the shutter 13 is pressed by the force of the spring 70 as shown in FIG. First, at the time of observation, the shaft 71 hooks the stopper 72, and the shutter 13 is opened against the force of the spring 70. Next, during processing, the shaft 71 is slid inward, and even after the shutter 13 is closed, the shaft 71 is slid further by the length a shown in FIG. At this time, a compression force is applied to the spring 70, so that the pressing force of the seal 43 can be adjusted.

33A and 33B show another embodiment of the installation position of the drive mechanism of the shutter 13. FIG. 33A is a side view for explaining the state during sample observation, and FIG. 33B is a side view for explaining the state during processing. Is. In each of the above-described embodiments, the shutter 13 is opened and closed by using the drive device outside the main chamber 28, but in this embodiment, the drive portion is provided inside the main chamber 28. In the figure, a motor 73 is connected to a ball screw 75 via a coupling 74,
The nut portion 76 of the ball screw 75 is supported by a cross roller guide 77 integrated with the shutter 13 so that the nut portion 76 can slide on the shutter 13. Similar to FIG. 32, using the stopper 78 on the shutter 13, the nut portion 76 is hooked on the stopper 78 when the shutter 13 is opened, and the nut portion 76 is idled when the shutter 13 is closed, and the seal 43 is preloaded by the spring 70. Press down. With this structure, the rotary motion of the motor 73 is changed by the ball screw 75 to the shutter 1.
3 can be converted into a linear motion, and only the lead wire for supplying the electric power of the motor needs to be taken out of the vacuum main chamber 28, so that the structure is relatively simple.

FIG. 34 is a plan view of another embodiment of the drive mechanism for the shutter 13 as seen from the lower surface side during processing. When using two shutters on the left and right in each of the above-described embodiments,
The opening and closing was done using independent drive devices,
In the present embodiment, a structure is used in which both the left and right shutters 13 are driven by one driving device using a link mechanism. In the figure, the movement of the shaft 80 is transmitted to the shutter 13 via a stopper 81. The arms 82 connected to the two shutters 13 are connected at a fulcrum 83. This fulcrum 83
By moving along the guide 84, both shutters 13 can be driven. Each arrow in the figure represents the movement of each part when the shutter 13 is opened.

FIG. 35 shows the shutter 13 shown in FIG.
FIG. 9 is a perspective plan view of the modified example of the drive mechanism as seen from the lower surface side during processing. In the present embodiment, a structure is used in which both the left and right shutters 13 are driven by one driving device using wires. The drive mechanism itself is the same as that shown in FIG. The wire 85 is fastened to the drive side shutter 13, and the end of the wire 85 is connected via the pulley 86 to the driven side shutter 13.
Fixed to. When the shutter 13 on the driving side is opened, the wire 8
The tension of 5 also opens the shutter 13 on the driven side. It is also possible to use a belt or the like (a pulley corresponding thereto) instead of the wire 85.

FIG. 36 shows the shutter 13 shown in FIG.
FIG. 11 is a plan view of a modified example of the drive mechanism as viewed from the lower surface side during sample observation. In this embodiment, as shown in FIG. 36, the ball screws 75a and 75b having opposite screw directions are used to adjust the left and right sides.
The shutter 13 has a structure in which it is opened and closed by a single drive device. Other configurations are the same as those in FIG. The rotational movement of the motor (not shown) is caused by the coupling 74
The ball screws 75a and 75b and the nut portions 76a and 76b corresponding thereto are converted into linear motions in mutually opposite directions, and the shutter 13 is opened and closed.

FIG. 37 shows a modification of the drive mechanism of the shutter 13, where (a) is a side view for explaining the state during sample observation, and (b) is a side view for explaining the state during processing. In the first embodiment and the like, when the shutter 13 is opened / closed, the shutter 13 contacts the O-ring 42 during the opening / closing, so that the O-ring 42 is relatively easily worn.
In this embodiment, in order to improve the wear resistance of the O-ring 42, a cross roller guide 39 obliquely attached is provided, and when the shutter 13 is fully opened, the shutter 13 is positioned slightly downward so that the two shutters 13 on the left and right are provided. When the tips are completely closed, the shutter 13 is moved in parallel so that the upper surface of the shutter 13 contacts the O-ring 42 in a pressed state. A bearing 87 is attached to the tip of the push rod 40 so that the shutter 13 can move in the vertical direction as well, to reduce friction during movement. In the case of driving using a motor, the driving device set may be obliquely attached.

FIG. 38 is a modification of the drive mechanism of the shutter 13 shown in FIG. 37. (a) is a side view for explaining the state during sample observation, and (b) is a side view for explaining the state during processing. is there. Rollers 88 are provided on both sides of the left and right shutters 13.
Is provided, and the push rod 40 is connected to the rear end portion. When the shutter 13 is open (a), the shutter 13 is below the O-ring 42 and is inclined, but when the shutter 13 is closed, the push rod 40 is linearly moved in the horizontal direction indicated by the arrow. The roller 8
8 moves along the slope 89a of the guide 89, the two shutters 13 on the left and right rise, and when they are closed, they contact the O-ring 42 in a pressed state. With this configuration, as in the case of FIG. 37, the wear resistance of the O-ring 42 can be improved.

FIG. 39 is a modification of the drive mechanism of the shutter 13 shown in FIG. 37 or 38. FIG. 39A is a side view for explaining the state during sample observation, and FIG. 39B is a side view for explaining the state during processing. It is a side view. Both sides of the shutter 13 are provided on the slide base 90 at four places, and the arm 9 with bearings is provided.
It is held at 1. Both sides of the slide base 90 are
It is held by a pair of cross roller guides 39 and can move in parallel. A spring 92 is provided between the slide base 90 and the shutter 13. The spring 92 keeps the shutter 13 stopped by a stopper 93 while always receiving a pulling force in the opening direction. Shutter 13
Is connected to the push rod 40. Shutter 13
When is closed, the shutter 13 and the slide base 90 move in parallel by receiving a horizontal force from the push rod 40. The front surface 90a of the slide base 90 serves as a stopper portion before the shutter 13 is completely closed. After this, the shutter 13 is further pushed by the push rod 40, the spring 92 extends and the arm 91 is rotated as shown in (b), and the upper surface of the shutter 13 is pressed against the sealing surface. This structure also has the effect of improving the wear resistance of the seal portion, similar to the drive mechanism of the shutter 13 shown in FIG. 37 or 38.

Although the MCP11 is used as the secondary particle amplifying section in each of the above embodiments, the present invention is also effective when a channeltron or an electron multiplier is used instead of the MCP11.

Although the lead-in electrode 12 is used in the above description, the lead-in electrode 12 can be omitted if the secondary particle yield is sufficient and the resolution is not affected.

Although the above description has dealt with the case of etching, the present invention protects the secondary particle detector even in charged particle beam assisted deposition using a gas that causes deposition by irradiation of the charged particle beam. It is valid.

In the above description, the ion beam was irradiated as the beam used for processing, and the secondary particles were detected as the particles to be detected, but the electron beam as the processing beam or the secondary electrons as the particles to be detected. Even when using, the same effect can be obtained by appropriately changing the voltage applied to the secondary particle detector.

Further, in the above description, the shutter was used to shut off the reactive gas at the time of processing the sample, but the voltage application to the secondary particle detector was stopped without using the shutter, and the gas molecules adsorbed to the detector after the processing was completed. After exhausting the
Degradation of the detector can also be reduced by the method of applying a voltage to the detector again and performing machining positioning.

[0061]

According to the present invention, the secondary particle detector can be protected from the reactive gas when the reactive gas is introduced and the reactive etching and the assist deposition are performed by the energy beam. The equipment can be operated. Further, it is possible to use a detector having low durability against a reactive gas and other constituent elements in the chamber even during non-operation such as sample observation and processing condition setting. Furthermore, even a detector that requires a high degree of vacuum during operation can always be in an operating state by using the shutter mechanism described above, and the time required for stabilization accompanying switching between operation and non-operation can be omitted. .

[Brief description of drawings]

FIG. 1 is a device configuration diagram of a first embodiment of the present invention.

FIG. 2 is a diagram showing an operation sequence of each element when observing and processing the sample of FIG.

FIG. 3 is a diagram showing a main part of the apparatus at the time of observation in FIG.

FIG. 4 is a diagram showing a main part of the apparatus at the time of processing in FIG.

FIG. 5 is a sectional view (No. 1) of a main part of the device at the time of processing of the second embodiment of the present invention.

FIG. 6 is a main part view (No. 2) of the apparatus at the time of processing according to the second embodiment of the present invention.

7 is a diagram showing an operation sequence of each element during observation / processing of the sample of FIG.

FIG. 8 is a diagram showing an operation sequence of each element at the time of observing and processing the sample according to the third embodiment of the present invention.

FIG. 9 is a cross-sectional view of an essential part of the device during sample observation according to the third embodiment of the present invention.

FIG. 10 is a cross-sectional view of the main parts of the device during processing according to the third embodiment of the present invention.

FIG. 11 is a diagram showing a main part of an apparatus at the time of processing according to a fourth embodiment of the present invention.

FIG. 12 is a cross-sectional view of the shutter driving device according to the first embodiment of the present invention.

FIG. 13 is a diagram showing an operation sequence of each element at the time of observing and processing the sample according to the fifth example of the present invention.

FIG. 14 is a diagram showing an example of a cross section of a seal between a shutter and an optical path pipe of the present invention.

FIG. 15 is a diagram at the time of observing a sample, showing another example of the O-ring according to the first embodiment of the present invention.

FIG. 16 is a diagram at the time of processing showing another example of the O-ring according to the first embodiment of the present invention.

FIG. 17 is a diagram showing another example of the L-shaped seal of FIG. 15 during sample observation.

FIG. 18 is a view at the time of processing showing another example of the L-shaped seal of FIG. 15.

19 is a diagram at the time of observing a sample, showing another example of the seal around the optical path pipe of FIG.

20 is a view at the time of processing showing another example of the seal around the optical path pipe of FIG.

FIG. 21 is a view showing a modified example of the seal shown in FIG. 19 during sample observation.

22 is a view at the time of processing showing a modified example of the seal shown in FIG.

FIG. 23 is a view at the time of observing a sample showing a modified example of the seal according to the first embodiment of the present invention.

FIG. 24 is a view at the time of processing showing a modified example of the seal according to the first embodiment of the present invention.

FIG. 25 is a diagram showing a modified example of the shutter mechanism of the present invention during sample observation.

FIG. 26 is an explanatory diagram during the operation of the shutter mechanism of FIG.

FIG. 27 is a view of the shutter mechanism of FIG. 25 during processing.

FIG. 28 is a diagram showing a modified example of the shutter mechanism of FIG. 25 during sample observation.

FIG. 29 is a view at the time of processing showing a modified example of the shutter mechanism of FIG. 25.

FIG. 30 is a view at the time of processing showing a modification of the position of the lead-in electrode of the present invention.

FIG. 31 is a diagram at the time of processing showing a modified example of the shutter and the optical path pipe of FIG. 30.

FIG. 32 is a view showing another embodiment of the shutter drive mechanism of the present invention.

FIG. 33 is a diagram showing another embodiment of the shutter drive mechanism installation position of the present invention.

FIG. 34 is a plan view showing a modified example of the shutter driving mechanism of the present invention as seen from the lower surface side.

35 is a perspective plan view from the lower surface side showing a modified example of the shutter drive mechanism in FIG. 34. FIG.

FIG. 36 is a plan view showing a modified example of the shutter drive mechanism of FIG. 35 as seen from the lower surface side.

FIG. 37 is a side view showing a modified example of the shutter drive mechanism of the present invention.

38 is a side view showing a modified example of the shutter drive mechanism in FIG. 37. FIG.

39 is a side view showing another modified example of the shutter drive mechanism in FIG. 37. FIG.

FIG. 40 is a diagram showing gas blocking performance when the sealing mechanism shown in FIG. 19 is used.

41 is a diagram showing a transition of an amplification factor by MCP in the case of FIG. 40. FIG.

[Explanation of symbols]

1 ... Ion source, 2 ... Ion beam, 9 ... Optical path pipe, 1
0 ... Detection electrode, 11 ... Micro channel plate (M
CP), 12 ... Pull-in electrode, 13, 50, 66 ... Shutter, 14 ... Driving device, 15 ... Nozzle, 16 ... Flow rate adjusting valve, 18 ... Reactive gas cylinder, 19 ... Electron gun, 21 ...
Lens, 23 ... Orifice, 24 ... Sample, 25 ... Stage, 26 ... IB chamber, 27 ... MCP chamber, 28 ... Main chamber, 29, 30, 31, 32 ... Valve, 38 ...
Computer, 39 ... Cross roller guide, 40 ... Push rod, 41 ... Shield cover, 42 ... O-ring,
43 ... Seal, 44a, 44b ... Labyrinth, 51 ... Passage (for refrigerant), 52 ... Nozzle (for inert gas).

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mitsunobu Mizumura 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Inside the Hitachi, Ltd. Institute of Industrial Science (72) Fumika Ito Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa 292 Address: Hitachi Ltd., Production Engineering Laboratory (72) Inventor Satoshi Hara, Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa Prefecture 292 Address: Hitachi Ltd. Production Engineering Laboratory (72) Inventor Toshio Yamada 2326 Imai, Ome, Tokyo Address Hitachi, Ltd. Device Development Center (72) Inventor Hirohiro Koizumi 5-20-1 Kamimizuhonmachi, Kodaira-shi, Tokyo Incorporated company Hitachi Ltd. Musashi Factory

Claims (13)

[Claims] 1. A stage having a sample mounted therein is provided,
A main chamber having an exhaust means, and (2) a chamber connected to the main chamber, in which a charged beam generated by a charged beam source can be applied to the sample through a center pipe for leading the charged beam. A charged beam optical system having an evacuation means, (3) an electron gun for electrically irradiating charged particles to electrically neutralize the sample surface, and (4) working the sample surface in cooperation with the charged beam. Reactive gas to be performed, reactive gas supply means for guiding the sample surface, (5) observing the processed portion of the sample surface, a charged particle detector for detecting charged particles emitted from the processed portion, ( 6) A charged beam processing apparatus comprising a shielding means capable of shielding the charged particle detector from the reactive gas, wherein (7) the charged particle detector is partitioned so as to be shieldable by the shielding means, and the charged particle detector can be housed. Empty storage The a, a charged beam processing apparatus characterized by comprising an exhaust means for evacuating the housing space. 2. A shielding member for shielding the charged beam optical system from the chamber and the main chamber is provided between the chamber and the main chamber, and the charged particle detector surrounds the center pipe for guiding the charged beam. The charged particle beam processing apparatus according to claim 1, wherein 3. The charged particle beam processing apparatus according to claim 1, wherein the shielding means is a shutter mechanism that can be opened and closed, and is arranged on the sample surface side of the charged particle detector. 4. A shield member for shielding between a chamber containing the charged beam optical system and the main chamber,
3. The charged particle beam processing apparatus according to claim 2, comprising an openable / closable shutter mechanism, which is arranged on two sides above and below the charged particle detector in parallel with the shutter mechanism on the sample surface side, opposite the sample surface side. . 5. The charged particle beam processing apparatus according to claim 3, wherein the shutter mechanism comprises a two-member shutter that can be opened and closed on both left and right sides of the center pipe for leading out the charged beam. 6. The shutter mechanism, when the shutter is closed, between two left and right members of the shutter, between the shutter and a center pipe for leading out the charged beam, and between the shutter and an inner wall of the main chamber. 6. The charged beam processing apparatus according to claim 3, 4 or 5, further comprising a sealing mechanism for sealing the above. 7. The charged particle beam processing apparatus according to claim 3, wherein a shield cover for preventing disturbance of an electromagnetic field on the sample due to opening / closing of the shutter mechanism is provided on the sample surface side of the shutter mechanism. 8. The charged particle beam processing apparatus according to claim 3, wherein an electrode capable of applying a voltage to the shutter is provided on the sample surface side of the shutter mechanism to prevent disturbance of an electric field on the sample due to opening and closing of the shutter mechanism. . 9. The charged particle beam processing apparatus according to claim 3, wherein the shutter mechanism includes a cooling unit capable of adsorbing a reactive gas that is in contact with the shutter among the reactive gases guided to the sample surface. 10. The main chamber can be blown out of the reactive gas remaining on the sample surface portion of the reactive gas guided to the sample surface to prevent the reactive gas from adhering to the sample surface. The charged particle beam processing apparatus according to claim 1, further comprising an inert gas delivery means for delivering the inert gas through the nozzle. Charged beam processing equipment. 11. The charged particle beam processing apparatus according to claim 1, wherein the electron gun for irradiating the charged particles is provided with a lens for converging the charged particles on both sides of the orifice provided inside the gun. 12. (1) A charged beam from a charged beam source is converged by a charged beam optical system to irradiate a sample in a main chamber, and (2) a charged particle detector from a reactive gas guided to the sample surface. To open the shutter mechanism for shielding, (3) by irradiating the sample with a charged beam, set the processing conditions for the sample surface by detecting the charged particles emitted from the sample by the charged particle detector,
(4) After setting the processing conditions, the shutter mechanism is closed, the charged particle detector is shielded from the reactive gas to evacuate the storage space of the charged particle detector, and (5) the sample surface irradiated with the charged beam. The sample surface is processed by introducing the reactive gas into (6), and after the processing is completed, the inside of the main chamber is evacuated, the shutter mechanism is opened, and the process returns to the step (1). Beam processing method. 13. (1) A charged beam from a charged beam source is converged by a charged beam optical system to irradiate a sample in a main chamber, and (2) a charged particle detector is sandwiched to accommodate the charged beam optical system. The upper shutter mechanism of the upper and lower two-stage shutter mechanism that shields between the main chamber and the main chamber, and after closing, open the lower shutter mechanism, and (3) by irradiating the sample with the charged beam. , The charged particles emitted from the sample are detected by the charged particle detector to set the processing conditions of the sample surface,
(4) After setting the processing conditions, the lower shutter mechanism is closed, and after closing, the upper shutter mechanism is opened to evacuate the chamber containing the charged beam optical system including the storage space for the charged particle detector, (5) The reactive gas is guided to the surface of the sample irradiated with the charged beam to process the surface of the sample, and (6) after the processing is completed, the storage space of the charged particle detector is evacuated to release the upper shutter. After closing the mechanism and closing it, open the lower shutter mechanism,
A charged beam processing method characterized by returning to the step (1).