JPH0645519B2 - Method for growing p-type SiC single crystal - Google Patents
Method for growing p-type SiC single crystalInfo
- Publication number
- JPH0645519B2 JPH0645519B2 JP19345186A JP19345186A JPH0645519B2 JP H0645519 B2 JPH0645519 B2 JP H0645519B2 JP 19345186 A JP19345186 A JP 19345186A JP 19345186 A JP19345186 A JP 19345186A JP H0645519 B2 JPH0645519 B2 JP H0645519B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- sic
- growing
- sic single
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 10
- 239000002994 raw material Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 27
- 229910010271 silicon carbide Inorganic materials 0.000 description 27
- 239000000463 material Substances 0.000 description 3
- 238000005092 sublimation method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 （イ） 産業上の利用分野 本発明はｐ型ＳｉＣ（シリコン・カーバイド）単結晶の
成長方法に関する。The present invention relates to a method for growing a p-type SiC (silicon carbide) single crystal.
（ロ） 従来の技術 ＳｉＣは物理的、化学的に安定であり、しかも高温、放
射線に耐える素材であるため、耐環境性半導体材料とし
ての応用が期待されている。特に６Ｈ型のＳｉＣ単結晶
は、室温で約３．０ｅＶの禁制帯幅をもち、青色発光ダ
イオード用素材として用いられている。(B) Conventional Technology Since SiC is a material that is physically and chemically stable and can withstand high temperature and radiation, it is expected to be applied as an environment resistant semiconductor material. In particular, 6H type SiC single crystal has a band gap of about 3.0 eV at room temperature and is used as a material for blue light emitting diodes.
このようなＳｉＣ単結晶のインゴットを成長させる場合
には、主に昇華法が採用されている。この昇華法によっ
てｐ型のＳｉＣ単結晶を成長させる方法としては、従来
Ａｌ（アルミニウム）粉末をＳｉＣ結晶と混合し、これ
を原材料として１〜１０Torrの低圧下で加熱昇華させる
ことによりＳｉＣ単結晶からなる種結晶上にＳｉＣ単結
晶が成長する過程で、気化したＡｌをドープする方法が
ある（「物性」１９７０年５月号ｐ．２６３〜ｐ．２６
９）。When growing such a SiC single crystal ingot, a sublimation method is mainly adopted. As a method for growing a p-type SiC single crystal by this sublimation method, a conventional Al (aluminum) powder is mixed with a SiC crystal, and this is used as a raw material to heat and sublimate the SiC single crystal under a low pressure of 1 to 10 Torr. There is a method of doping vaporized Al in the process of growing a SiC single crystal on a seed crystal (see "Physical properties", May 1970, p.263-p.26).
9).
（ハ） 発明が解決しようとする問題点 然るに上記方法では上記成長温度は２０００〜２５００
℃とＡｌの沸点（１５００〜１６００℃）に較べて非常
に高いため、上記成長温度まで昇温する間にＡｌのみが
気化してしまう。このため、ＳｉＣ単結晶の成長初期で
はＡｌのキヤリア濃度が非常に高く成長が進むにつれて
Ａｌのキヤリア濃度が低くなり、遂にはＡｌを含有しな
いｎ型のＳｉＣ単結晶が成長する結果となっていた。(C) Problems to be Solved by the Invention However, in the above method, the growth temperature is 2000 to 2500.
C. and the boiling point of Al (1,500 to 1,600 ° C.) are extremely high, so only Al vaporizes while the temperature is raised to the growth temperature. Therefore, in the initial stage of growth of the SiC single crystal, the Al carrier concentration was very high, and as the growth progressed, the Al carrier concentration decreased, and eventually, an n-type SiC single crystal containing no Al was grown. .
また、成長温度達成前に気化したＡｌが種結晶表面に付
着するため、その表面に成長するＳｉＣ単結晶の結晶性
を悪化させるという問題点があった。Further, since vaporized Al adheres to the seed crystal surface before the growth temperature is reached, there is a problem that the crystallinity of the SiC single crystal growing on the surface is deteriorated.
（ニ） 問題点を解決するための手段 本発明は斯る点に鑑みてなされたもので、その構成的特
徴はＳｉＣ原材料を昇華させてＳｉＣ種結晶上にＳｉＣ
単結晶を成長させる方法であって、上記原材料として不
純物をドープしてなるＳｉＣ結晶を用いることにある。(D) Means for Solving the Problems The present invention has been made in view of the above points, and its structural feature is that a SiC raw material is sublimated to form SiC on a SiC seed crystal.
A method of growing a single crystal is to use an SiC crystal obtained by doping impurities as the raw material.
（ホ） 作 用 上記ドープされた不純物はＳｉＣ結晶的に結合している
ため、高温下でも不純物のみが単独で気化することはな
い。(E) Operation Since the doped impurities are SiC crystallographically bonded, the impurities alone do not vaporize even at high temperatures.
（ヘ） 実施例 本発明の実施例としては、Ａｌをｐ型不純物として含有
するキヤリア濃度１×１０18／cm3のＳｉＣ結晶を原材
料として用い、種結晶温度２２００〜２４００℃、原材
料温度２３００〜２５００℃、種結晶と原材料との間の
温度勾配５〜２０℃／cm、反応系内のガス圧１〜１０To
rrという条件下で原材料を昇華させ、種結晶表面にｐ型
ＳｉＣ単結晶を成長させた。(F) Example As an example of the present invention, a SiC crystal containing Al as a p-type impurity and having a carrier concentration of 1 × 10 18 / cm 3 was used as a raw material, and a seed crystal temperature of 2200 to 2400 ° C. and a raw material temperature of 2300 to 2400 ° C. 2500 ° C., temperature gradient between seed crystal and raw material 5-20 ° C./cm, gas pressure in reaction system 1-10 To
The raw material was sublimated under the condition of rr to grow a p-type SiC single crystal on the seed crystal surface.
このようにして得られた単結晶はその成長層厚が大とな
ってもｎ型に反転することはなく、キヤリア濃度５×１
０17／cm3、比抵抗０．５〜１．０Ω・cmの均一な特性
を示した。The single crystal thus obtained does not invert to the n-type even if the thickness of the growth layer becomes large, and the carrier concentration is 5 × 1.
It exhibited uniform characteristics of 0 17 / cm 3 and a specific resistance of 0.5 to 1.0 Ω · cm.
本実施例では原材料としてキヤリア濃度が１×１０18／
cm3のＡｌドープＳｉＣ結晶を用いてキヤリア濃度５×
１０17／cm3のｐ型ＳｉＣ単結晶を作成したが、上記キ
ヤリア濃度より大なるキヤリア濃度を有するｐ型ＳｉＣ
単結晶を得るためには原材料自身のキヤリア濃度を大と
すればよい。In this embodiment, as a raw material, the carrier concentration is 1 × 10 18 /
Carrier concentration 5 × using cm 3 Al-doped SiC crystal
A p-type SiC single crystal having a concentration of 10 17 / cm 3 was prepared, but the p-type SiC having a carrier concentration higher than the above-mentioned carrier concentration was used.
In order to obtain a single crystal, the carrier concentration of the raw material itself may be increased.
尚、原材料となるＡｌドープＳｉＣ結晶は例えば第１図
に示す如く高純度グラフアイト製のるつぼ(1)中に適量
のＡｌを添加したＳｉ（シリコン）融液(2)を封入し、
斯るるつぼ(1)を不活性ガス中で１７００〜２０００℃
の温度に保つことによりるつぼ(1)内壁に微結晶(3)とし
て析出させることができる。また、このようにして析出
したＡｌドープＳｉＣ結晶(3)のキヤリア濃度は第２図
に示す如くるつぼ(1)中におけるＳｉ融液中のＡｌ添加
量に比例する。The Al-doped SiC crystal used as a raw material is, for example, as shown in FIG. 1, a high-purity graphite crucible (1) is filled with an appropriate amount of Al-added Si (silicon) melt (2),
The crucible (1) is placed in an inert gas at 1700 to 2000 ° C.
By maintaining the temperature at 1, it is possible to deposit fine crystals (3) on the inner wall of the crucible (1). The carrier concentration of the Al-doped SiC crystal (3) thus deposited is proportional to the amount of Al added to the Si melt in the crucible (1) as shown in FIG.
（ト） 発明の効果 本発明方法によれば、特性が均一なＳｉＣ単結晶を得る
ことができる。(G) Effect of the Invention According to the method of the present invention, a SiC single crystal having uniform properties can be obtained.
第１図はＡｌドープＳｉＣ結晶（微結晶）を作成するた
めの装置を示す断面図、第２図は第１図の装置を用いて
作成したＡｌドープＳｉＣ結晶のキヤリア濃度とＳｉ融
液中のＡｌ添加量との関係を示す特性図である。FIG. 1 is a cross-sectional view showing an apparatus for producing an Al-doped SiC crystal (microcrystal), and FIG. 2 is a carrier concentration of an Al-doped SiC crystal produced by using the apparatus of FIG. It is a characteristic view which shows the relationship with Al addition amount.
Claims (1)
にＳｉＣ単結晶を成長させる方法であって、上記原材料
として不純物をドープしてなるＳｉＣ結晶を用いること
を特徴とするＳｉＣ単結晶の成長方法。1. A method for growing a SiC single crystal on a SiC seed crystal by sublimating a SiC raw material, wherein a SiC single crystal doped with impurities is used as the raw material. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19345186A JPH0645519B2 (en) | 1986-08-18 | 1986-08-18 | Method for growing p-type SiC single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19345186A JPH0645519B2 (en) | 1986-08-18 | 1986-08-18 | Method for growing p-type SiC single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6350399A JPS6350399A (en) | 1988-03-03 |
| JPH0645519B2 true JPH0645519B2 (en) | 1994-06-15 |
Family
ID=16308214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19345186A Expired - Lifetime JPH0645519B2 (en) | 1986-08-18 | 1986-08-18 | Method for growing p-type SiC single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0645519B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5433167A (en) * | 1992-02-04 | 1995-07-18 | Sharp Kabushiki Kaisha | Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal |
| JP5068423B2 (en) | 2004-10-13 | 2012-11-07 | 新日本製鐵株式会社 | Silicon carbide single crystal ingot, silicon carbide single crystal wafer, and manufacturing method thereof |
| JP4912729B2 (en) * | 2006-04-13 | 2012-04-11 | 新日本製鐵株式会社 | Outline processing method of silicon carbide single crystal ingot |
| JP5565070B2 (en) * | 2010-04-26 | 2014-08-06 | 住友電気工業株式会社 | Silicon carbide crystal and method for producing silicon carbide crystal |
| JP5994248B2 (en) * | 2011-12-26 | 2016-09-21 | 住友電気工業株式会社 | Ingot, substrate and group of substrates |
| CN103320862B (en) * | 2013-06-07 | 2016-03-30 | 山东大学 | Coloured moissanite gemstone and preparation method thereof |
| CN109722712B (en) * | 2019-03-12 | 2020-06-12 | 广州南砂晶圆半导体技术有限公司 | Method for uniformly doping SiC single crystal metal impurities |
-
1986
- 1986-08-18 JP JP19345186A patent/JPH0645519B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6350399A (en) | 1988-03-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |