JPH06457Y2 - Temperature measuring holder for thermal plasma torch - Google Patents

Temperature measuring holder for thermal plasma torch

Info

Publication number
JPH06457Y2
JPH06457Y2 JP12537788U JP12537788U JPH06457Y2 JP H06457 Y2 JPH06457 Y2 JP H06457Y2 JP 12537788 U JP12537788 U JP 12537788U JP 12537788 U JP12537788 U JP 12537788U JP H06457 Y2 JPH06457 Y2 JP H06457Y2
Authority
JP
Japan
Prior art keywords
temperature measuring
thermal plasma
plasma torch
holder
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP12537788U
Other languages
Japanese (ja)
Other versions
JPH0246867U (en
Inventor
豊彦 小林
健志 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Priority to JP12537788U priority Critical patent/JPH06457Y2/en
Publication of JPH0246867U publication Critical patent/JPH0246867U/ja
Application granted granted Critical
Publication of JPH06457Y2 publication Critical patent/JPH06457Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【考案の詳細な説明】 〔産業上の利用分野〕 この考案は、基体面に合成ダイヤモンドのような結晶膜
を気相析出させる熱プラズマトーチにおいて、基体を載
置するために設置する測温機能を備えたホルダーに関す
る。
[Detailed Description of the Invention] [Industrial field of application] This invention is a temperature measuring function installed to mount a substrate in a thermal plasma torch for vapor-depositing a crystalline film such as synthetic diamond on the substrate surface. For holders with.

〔従来の技術〕[Conventional technology]

高周波による熱プラズマトーチは、第2図に示すよう
に、周辺部に高周波電源1と連結するワークコイル2、
上端部に反応ガス供給装置3とバルブ4、5、6、7を
介してそれぞれ接続するノズル筒8、そして下部に基体
9を載置したホルダー10および排気装置11を備えるプラ
ズマ発生室12とから構成されている。
As shown in FIG. 2, the high frequency thermal plasma torch has a work coil 2, which is connected to a high frequency power source 1 at the periphery.
From the nozzle tube 8 which is connected to the reaction gas supply device 3 via the valves 4, 5, 6 and 7 at the upper end, and the plasma generation chamber 12 provided with the holder 10 and the exhaust device 11 on which the substrate 9 is placed at the lower part. It is configured.

この種の気相析出においては、気体の温度が析出する膜
の性状に著しい影響を与えることから、基体の測温が可
能になれば反応機構の解明、膜組織の調整、あるいは析
出速度の制御などに大いに役立つことになる。
In this type of vapor phase deposition, the temperature of the gas has a significant effect on the properties of the deposited film, so if the temperature of the substrate can be measured, the reaction mechanism will be elucidated, the film structure will be adjusted, or the deposition rate will be controlled. It will be very useful for such things.

しかしながら、従来、熱プラズマトーチの基体温度を測
定している例はない。
However, conventionally, there is no example in which the substrate temperature of the thermal plasma torch is measured.

〔考案が解決しようとする課題〕[Problems to be solved by the device]

この理由は、熱プラズマは数千度の高温と強力な発光を
発すること、また高温仕様の熱電対を著しく劣化させる
雰囲気を伴う場合が多いこと、さらに熱電対による測温
に際し高周波からのノイズが入ることなどから、通常の
熱電対や光高温計では測定することができないためであ
る。
The reason for this is that thermal plasma emits strong light at a high temperature of several thousand degrees, and it is often accompanied by an atmosphere that significantly deteriorates thermocouples with high temperature specifications. This is because it cannot be measured with a normal thermocouple or optical pyrometer because it enters.

この考案は、上記の実情に鑑み開発されたもので、その
目的は反応中に基体の温度を容易に測定することができ
る構造の熱プラズマトーチ用測温ホルダーを提供すると
ころにある。
The present invention was developed in view of the above situation, and an object thereof is to provide a temperature measuring holder for a thermal plasma torch having a structure capable of easily measuring the temperature of a substrate during a reaction.

〔課題を解決するための手段〕[Means for Solving the Problems]

上記の目的を達成するためのこの考案による熱プラズマ
トーチ用測温ホルダーは、基体を載置するホルダーを、
中心貫通孔に検温光センサーを挿着した水冷ジャケット
により構成してなるものである。
A temperature measuring holder for a thermal plasma torch according to the present invention for achieving the above-mentioned object is a holder for mounting a substrate,
It is configured by a water-cooling jacket in which a temperature measuring optical sensor is attached to the central through hole.

ホルダーはトーチの底部から系内に垂直状に突出してお
り、その上面は基体を載置するために必要な面性状を呈
している。
The holder projects vertically from the bottom of the torch into the system, and its upper surface has the surface texture necessary for mounting the substrate.

中心貫通孔に挿着される検温光センサーには、レンズを
用いて集光する構造のものではなく、基体に直接、当接
あるいは近接させて測温するタイプの小径先端部をもつ
アルミナあるいは石英単結晶系のものが適用され、光フ
ァイバーを介して計測器と接続している。
The thermometric optical sensor inserted into the central through hole does not have a structure in which light is collected using a lens, but is made of alumina or quartz with a small-diameter tip of a type that measures the temperature directly in contact with or close to the substrate. A single crystal type is applied, and it is connected to a measuring instrument via an optical fiber.

〔作用〕[Action]

このような構成を有する熱プラズマトーチ用測温ホルダ
ーによれば、検温光センサーが水冷ジャケットによって
保護されているため、熱、光等の影響を受けることな
く、基体からの放射光のみによる正確な測温が可能とな
る。
According to the temperature measuring holder for the thermal plasma torch having such a configuration, since the temperature measuring optical sensor is protected by the water cooling jacket, the temperature measuring optical sensor is not affected by heat, light, etc. Temperature measurement is possible.

そのうえ、同時に載置された基体も冷却されるから、極
端な温度上昇による溶融などの損傷現象を有効に防止す
ることができ、また冷却度合を制御することにより基体
を対象物質の気相析出に最も適した温度に調整すること
ができる。
In addition, since the placed substrate is also cooled at the same time, it is possible to effectively prevent the damage phenomenon such as melting due to an extreme temperature rise, and by controlling the cooling degree, the substrate can be deposited in the vapor phase of the target substance. It can be adjusted to the most suitable temperature.

〔実施例〕〔Example〕

以下、この考案を第1図に示した実施例に基いて説明す
る。
The invention will be described below with reference to the embodiment shown in FIG.

第1図はこの考案に係る熱プラズマトーチ用測温ホルダ
ーをトーチに設置した状態を示した拡大側断面図で、13
は中心貫通孔を備える水冷ジャケット、14は前記中心貫
通孔に挿着した検温光センサーである。水冷ジャケット
13は、ステンレス鋼、銅などの金属材によって形成する
ことができる。検温光センサー14は、検出する波長領域
(例えば、0.4〜1.2μm)において光透過率が高く、か
つ高温で劣化(失透)しないアルミナ単結晶や石英から
なるもので、前述したように先端当接または近接型のタ
イプが用いられる。基体9はホルダーの上面に載置さ
れ、下面中心に当接する検温光センサー14は光ファイバ
ー15を介して計測器16に接続される。
FIG. 1 is an enlarged side sectional view showing a state in which the temperature measuring holder for the thermal plasma torch according to the present invention is installed in the torch.
Is a water cooling jacket having a central through hole, and 14 is a thermometric optical sensor inserted into the central through hole. Water cooling jacket
13 can be formed of a metal material such as stainless steel or copper. The temperature detecting optical sensor 14 is made of alumina single crystal or quartz that has a high light transmittance in the wavelength range to be detected (for example, 0.4 to 1.2 μm) and does not deteriorate (devitrify) at high temperatures. Contact or proximity type is used. The base body 9 is placed on the upper surface of the holder, and the temperature measuring optical sensor 14 abutting on the center of the lower surface is connected to the measuring instrument 16 via the optical fiber 15.

ホルダーは、トーチの底部17からプラズマ発生室12に垂
直状に突出する状態に設置し、運転時には水冷ジャケッ
ト13に水を強制循環して使用される。
The holder is installed so as to vertically project from the bottom 17 of the torch into the plasma generation chamber 12, and is used by forcibly circulating water in the water cooling jacket 13 during operation.

上記構成の測温ホルダーに、アキュファイバ温度計測シ
ステム・モデル100(米国アキュファイバ社製)の光セ
ンサー部(アルミナ単結晶、直径1.27mm)を挿着セット
し、圧力;1気圧、電源周波数;4MHz、真空管入
力;60KVAの条件下、CH(0.4/min.)、Ar
(40/min.)、H(6/min.)からなる反応ガス
流入系内でプラズマ放電を発生させMo基体面にダイヤ
モンド膜を析出させた。反応スタート時、基体の温度を
計測したところ820℃であったが、発生したプラズマ内
にCHガスを吹き込んだ際に基体温度は約100℃低下
することが確認された。この状態で反応を継続した結
果、10分間で18μmのダイヤモンド膜が生成した。
The optical sensor unit (alumina single crystal, diameter 1.27 mm) of the AccuFiber temperature measuring system model 100 (made by AccuFiber Inc. in the United States) is inserted and set in the temperature measuring holder having the above configuration, and the pressure is 1 atm and the power supply frequency is; 4MHz, vacuum tube input; CH 4 (0.4 / min.), Ar under the condition of 60KVA
(40 / min.) And H 2 (6 / min.) In a reaction gas inflow system to generate plasma discharge to deposit a diamond film on the Mo substrate surface. When the temperature of the substrate was measured at the start of the reaction, it was 820 ° C., but it was confirmed that the substrate temperature decreased by about 100 ° C. when CH 4 gas was blown into the generated plasma. As a result of continuing the reaction in this state, a 18 μm diamond film was formed in 10 minutes.

〔考案の効果〕[Effect of device]

以上のとおり、この考案に従えば従来、測定が不可能と
されていた熱プラズマトーチ内の基体温度を容易に検知
することができる。このため、反応機構の解明、形成膜
組織の調整、析出速度の制御などに役立てることができ
る。また、ホルダー自体が水冷機構を備えているから、
基体の温度を調整することも可能となる。したがって、
基体物質の種類に拘わらず常に正常な膜形成をおこなう
ことができる。
As described above, according to the present invention, it is possible to easily detect the temperature of the substrate in the thermal plasma torch, which was conventionally impossible to measure. Therefore, it can be useful for elucidating the reaction mechanism, adjusting the formation film structure, controlling the deposition rate, and the like. Also, since the holder itself has a water cooling mechanism,
It is also possible to adjust the temperature of the substrate. Therefore,
It is possible to always perform normal film formation regardless of the type of the substrate material.

【図面の簡単な説明】[Brief description of drawings]

第1図はこの考案の熱プラズマトーチ用測温ホルダーを
例示した拡大側断面図、第2図は熱プラズマトーチを示
した概略断面図である。 1…高周波電源、 2…ワークコイル、 3…反応ガス供給装置、 4、5、6、7…バルブ、 8…ノズル筒、 9…基体、 10…ホルダー、 11…排気装置、 12…プラズマ発生室、 13…水冷ジャケット、14…検温光センサー、 15…光ファイバー、 16…計測器、 17…トーチの底部。
FIG. 1 is an enlarged side sectional view illustrating a temperature measuring holder for a thermal plasma torch of the present invention, and FIG. 2 is a schematic sectional view showing a thermal plasma torch. DESCRIPTION OF SYMBOLS 1 ... High frequency power supply, 2 ... Work coil, 3 ... Reaction gas supply device, 4, 5, 6, 7 ... Valve, 8 ... Nozzle cylinder, 9 ... Substrate, 10 ... Holder, 11 ... Exhaust device, 12 ... Plasma generation chamber , 13… water cooling jacket, 14… thermometric light sensor, 15… optical fiber, 16… measuring instrument, 17… bottom of torch.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】基体(9)を載置するホルダーを、中心貫
通孔に検温光センサー(14)を挿着した水冷ジャケット(1
3)により構成してなる熱プラズマトーチ用測温ホルダ
ー。
1. A water cooling jacket (1) in which a holder for mounting a substrate (9) is fitted with a temperature measuring optical sensor (14) in a central through hole.
Temperature measuring holder for thermal plasma torch configured by 3).
JP12537788U 1988-09-26 1988-09-26 Temperature measuring holder for thermal plasma torch Expired - Lifetime JPH06457Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12537788U JPH06457Y2 (en) 1988-09-26 1988-09-26 Temperature measuring holder for thermal plasma torch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12537788U JPH06457Y2 (en) 1988-09-26 1988-09-26 Temperature measuring holder for thermal plasma torch

Publications (2)

Publication Number Publication Date
JPH0246867U JPH0246867U (en) 1990-03-30
JPH06457Y2 true JPH06457Y2 (en) 1994-01-05

Family

ID=31375935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12537788U Expired - Lifetime JPH06457Y2 (en) 1988-09-26 1988-09-26 Temperature measuring holder for thermal plasma torch

Country Status (1)

Country Link
JP (1) JPH06457Y2 (en)

Also Published As

Publication number Publication date
JPH0246867U (en) 1990-03-30

Similar Documents

Publication Publication Date Title
JP2780866B2 (en) Light irradiation heating substrate temperature measurement device
US6217212B1 (en) Method and device for detecting an incorrect position of a semiconductor wafer
JP5647502B2 (en) Heat treatment apparatus, semiconductor device manufacturing method, and substrate processing method.
TW201413029A (en) Sensing head used for crystal oscillation type film thickness monitor
JP3653879B2 (en) Fluorescent thermometer
CN113013050A (en) Wafer warpage measuring apparatus and method
JPH06457Y2 (en) Temperature measuring holder for thermal plasma torch
JP4388443B2 (en) Film thickness monitoring method and film thickness monitoring apparatus
KR100762698B1 (en) Apparatus of thin film evaporation
JP2009218301A (en) Temperature measuring apparatus, placement table structure and thermal processing apparatus
JP2638311B2 (en) Heating temperature measuring device in microwave high electric field
JP3604425B2 (en) Vapor phase growth equipment
JPS586124A (en) Semiconductor vapor growth device
JPH06458Y2 (en) Temperature measuring device for thermal plasma torch
JPH0561574B2 (en)
JPS61210622A (en) semiconductor manufacturing equipment
JPS6250627A (en) Controlling method for surface temperature of substrate
JPH05217912A (en) Vapor growing apparatus
KR100190357B1 (en) Wafer heating and monitor module and method of operation
JPS62118519A (en) Semiconductor substrate heating equipment
JPH07151606A (en) Instrument for measuring temperature of substrate
US20260117387A1 (en) Device and system for in-situ scanning substrate temperature in an epitaxial reactor
JPH04359125A (en) Temperature measuring device for heated body
JP4007068B2 (en) Micro thermal expansion temperature sensor using thermal expansion material
JP3846934B2 (en) Temperature control method and apparatus for reaction chamber