JPH0646669B2 - Semiconductor laser and manufacturing method thereof - Google Patents
Semiconductor laser and manufacturing method thereofInfo
- Publication number
- JPH0646669B2 JPH0646669B2 JP62189839A JP18983987A JPH0646669B2 JP H0646669 B2 JPH0646669 B2 JP H0646669B2 JP 62189839 A JP62189839 A JP 62189839A JP 18983987 A JP18983987 A JP 18983987A JP H0646669 B2 JPH0646669 B2 JP H0646669B2
- Authority
- JP
- Japan
- Prior art keywords
- mesa
- layer
- gaas
- algainp
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title description 13
- 238000000034 method Methods 0.000 claims description 33
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 27
- 238000005253 cladding Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 7
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 2
- 238000005979 thermal decomposition reaction Methods 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 125000005842 heteroatom Chemical group 0.000 description 4
- 238000004943 liquid phase epitaxy Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本願発明は、可視光（〜0.6 μｍ帯）で発振するＧａＩ
ｎＰ／ＡｌＧａＩｎＰ半導体レーザの横モード制御構造
と、この横モード制御構造を備えるＧａＩｎＰ／ＡｌＧ
ａＩｎＰ半導体レーザの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention is a GaI device that oscillates in visible light (up to 0.6 μm band).
Transverse mode control structure of nP / AlGaInP semiconductor laser and GaInP / AlG having this transverse mode control structure
The present invention relates to a method for manufacturing an aInP semiconductor laser.
（従来の技術） ＧａＩｎＰ／ＡｌＧａＩｎＰ半導体レーザは、0.68μｍ
帯での室温連続発振達成以来、急速に、開発が進んでお
り、現在では、数千時間という高信頼化が得られ、実用
化の可能性が一気に高まった。これに伴い、コンパクト
・ディスク，光ディスク，ビデオ・ディスク，ＰＯＳと
いった光情報処理、プラスティック・ファイバ用光源と
しての光通信、物理計測といった多種多様の分野からの
期待、要求も増大しつつある。それと同時に、ＧａＩｎ
Ｐ／ＡｌＧａＩｎＰ半導体レーザの横モードについても
高品質化が望まれている。特に、ビデオ・ディスクのよ
うなアナログ処理では、低雑音レーザが必要とされてい
るし、また、光通信の分野では、スペクトルの単一性が
必要とされる。この要求を満たす横モード制御構造とし
ては、屈折率導波型、例えば、埋込みヘテロ構造（以下
ＢＨ構造と略記。）のようなものが最適であろう。(Prior Art) GaInP / AlGaInP semiconductor laser is 0.68 μm
Development has progressed rapidly since the continuous oscillation at room temperature in the band was achieved, and at present, the high reliability of several thousand hours has been obtained, and the possibility of practical application has increased dramatically. Along with this, expectations and demands from various fields such as optical information processing such as compact disc, optical disc, video disc, POS, optical communication as a light source for plastic fiber, and physical measurement are also increasing. At the same time, GaIn
Higher quality is also desired for the transverse mode of P / AlGaInP semiconductor lasers. In particular, analog processing such as video discs requires low noise lasers, and in the field of optical communications, spectral unity is required. As a transverse mode control structure that satisfies this requirement, a refractive index waveguide type structure, for example, a buried hetero structure (hereinafter abbreviated as BH structure) will be most suitable.
（発明が解決しようとする問題点） しかしながら、現在まで高信頼化の得られているＧａＩ
ｎＰ／ＡｌＧａＩｎＰ半導体レーザ構造の大半は、電流
狭窄機構のみのゲイン・ガイド型か、又は横モード制御
されているものでも、第３図に示すような、メサ側面に
吸収係数の大きな半導体層を積層するロス・ガイド型の
半導体レーザである。このようなゲイン・ガイド型また
はロス・ガイド型の半導体レーザでは、スペクトルが多
モード発振しており、もともとのＳ／Ｎ比が悪いから、
屈折率ガイド型のレーザに高周波バイアス法等を用いた
場合よりも、戻り光雑音特性が悪いと考えられる。ま
た、ゲイン・ガイド型またはロス・ガイド型のレーザで
は、導波される波面が曲がっているから非点収差が大き
く、光ディスク等の記録密度を向上させる上で問題があ
る。以上のような観点から、光情報処理、光通信等に用
いる横モード制御構造としては、屈折率ガイド型の方が
優勢であると考えられる。(Problems to be Solved by the Invention) However, GaI has been highly reliable up to now.
Most of the nP / AlGaInP semiconductor laser structures, even if they are gain guide type with only current confinement mechanism or lateral mode control, are laminated with a semiconductor layer having a large absorption coefficient on the side surface of the mesa as shown in FIG. It is a loss guide type semiconductor laser. In such a gain guide type or loss guide type semiconductor laser, the spectrum oscillates in multiple modes and the original S / N ratio is poor.
It is considered that the returned optical noise characteristic is worse than in the case where the high frequency bias method or the like is used for the refractive index guide type laser. Further, the gain guide type or loss guide type laser has a large astigmatism because the wavefront to be guided is bent, and there is a problem in improving the recording density of an optical disc or the like. From the above viewpoints, it is considered that the refractive index guide type is more dominant as the transverse mode control structure used for optical information processing, optical communication and the like.
従って、屈折率ガイド型レーザを中心に考えるわけであ
るが、現在までのところ、ＧａＩｎＰ／ＡｌＧａＩｎＰ
半導体レーザの横モード制御構造として、屈折率ガイド
型のものは、本願発明者の知る限り、報告されていな
い。そこで、従来のＧａＡｓ／ＡｌＧａＡｓ半導体レー
ザの屈折率導波構造より容易に類推される第４図，第５
図，第６図のような構造の半導体レーザについて、その
問題点を指摘していく。ただし、ＧａＩｎＰ／ＡｌＧａ
ＩｎＰ半導体材料は、液相成長法（以下ＬＰＥ法と略
記。）では、Ａｌの偏析係数が非常に大きく、成長が不
可能であり、その成長はＭＯＶＰＥ法または、分子線エ
ピタキー法（以下ＭＢＥ法と略記。）に限られているか
ら、ＣＳＰ，ＶＳＩＳといったＬＰＥ法独特の横モード
制御構造については、考慮していない。Therefore, the focus is on index-guided lasers, but up to the present GaInP / AlGaInP
As far as the inventor of the present invention knows, no refractive index guide type semiconductor laser transverse mode control structure has been reported. Therefore, it can be easily inferred from the refractive index guiding structure of the conventional GaAs / AlGaAs semiconductor laser by referring to FIGS.
The problems of the semiconductor laser having the structure shown in FIGS. 6 and 6 will be pointed out. However, GaInP / AlGa
InP semiconductor materials cannot be grown by a liquid phase epitaxy method (hereinafter abbreviated as LPE method) because the segregation coefficient of Al is very large, and the growth is performed by MOVPE method or molecular beam epitaxy method (hereinafter MBE method). Therefore, the lateral mode control structure peculiar to the LPE method such as CSP and VSIS is not considered.
まず、第４図，第５図および第６図の横モード制御構造
について説明する。第４図は，クラッド層３を部分的に
薄くすることによりメサを形成し、そのメサを基板と同
じ導電型の半導体で埋込むことにより、電流狭窄をする
構造である。この構造では、電流ブロック層４をＧａＡ
ｓとしたロス・ガイド型の半導体レーザで、室温連続発
振が報告されている。第４図の構造は、この電流ブロッ
ク層４を、メサを構成するＡｌＧａＩｎＰよりＡｌ組成
の大きなＡｌＧａＩｎＰまたはＡｌＩｎＰとし、屈折率
ガイド型のレーザを作製しようというものである。しか
しながら、この電流ブロック層４をＡｌＧａＩｎＰまた
はＡｌＩｎＰとした場合には、第４図のような形状を作
製するのに、成長上の問題がある。すなわち、第４図の
ＡｌＧａＩｎＰまたはＡｌＩｎＰの埋込みをＭＯＶＰＥ
法の選択エピタキシャル成長法を用いて行う場合、選択
マスク、例えばＳｉＮｘ膜の上への多結晶塊の析出は、
（ＡｌｘＧａ１−ｘ）ｙＩｎ１−ｙＰのｘの増加と共
に、急激に増大し、レーザ作製上の大きな障害となって
いる。First, the transverse mode control structure shown in FIGS. 4, 5, and 6 will be described. FIG. 4 shows a structure in which the mesa is formed by partially thinning the cladding layer 3 and the mesa is embedded with a semiconductor of the same conductivity type as the substrate, thereby confining the current. In this structure, the current blocking layer 4 is made of GaA.
At room temperature continuous oscillation, it has been reported that the loss-guided semiconductor laser of s. In the structure of FIG. 4, the current blocking layer 4 is made of AlGaInP or AlInP having an Al composition larger than that of AlGaInP forming the mesa to manufacture a refractive index guide type laser. However, when the current blocking layer 4 is made of AlGaInP or AlInP, there is a growth problem in producing the shape shown in FIG. That is, the embedding of AlGaInP or AlInP in FIG.
When the selective epitaxial growth method is used, the deposition of the polycrystalline mass on the selective mask, for example, the SiNx film is
(Al x Ga 1-x ) y In 1-y P increases abruptly with the increase of x, which is a major obstacle in laser fabrication.
次に、第５図の構造を説明する。第５図には、ＧａＡｓ
／ＡｌＧａＡｓでは通常ＬＰＥ法で作製されるＢＨレー
ザが示してある。第５図も、第４図と同様に、選択エピ
タキシャル法で作製できると考えられるが、第５図では
第４図に比べさらに活性層まで大気に露出されるから、
Ｏ２汚染に特に敏感なＡｌＧａＩｎＰ結晶にとっては、
積層不備、信頼性等問題は多いと考えられる。また、電
流ブロック層７，８の界面が活性層とずれることにより
リーク電流も問題となる。Next, the structure of FIG. 5 will be described. In Figure 5, GaAs
In / AlGaAs, a BH laser which is usually manufactured by the LPE method is shown. Like FIG. 4, FIG. 5 is also considered to be prepared by the selective epitaxial method, but in FIG. 5, the active layer is exposed to the atmosphere more than in FIG.
For AlGaInP crystals that are particularly sensitive to O 2 contamination,
It is thought that there are many problems such as stacking defects and reliability. Further, the interface between the current blocking layers 7 and 8 is displaced from the active layer, which causes a problem of leakage current.
次に、第６図の構造を説明する。第６図には、ＧａＡｓ
／ＡｌＧａＡｓ半導体では通常ＭＯＶＰＥ法で作製され
るセルフ・アライン型レーザが示してある。第６図で
は、第４図と同様に、電流ブロック層４を、電流注入部
のＡｌＧａＩｎＰよりもＡｌ組成の大きなＡｌＧａＩｎ
ＰまたはＡｌＩｎＰとし、実屈折率差がつくようにして
いる。この構造の最大の問題点は、現状のＧａＡｓ／Ａ
ｌＧａＡｓセルフ・アライン型レーザでの問題と同様
に、電流注入部でのクラッド層３とクラッド層３′の界
面であろう。第６図の構造は、１回目のＭＯＶＰＥ成長
で電流ブロック層４まで積層した後、電流注入路を作る
ために電流注入部において電流ブロック層４を部分的に
除去し、その後にクラッド層３′及びキャップ層５を積
層して製造する。この際、高Ａｌ組成であるクラッド層
３の表面が大気中に露出され、酸化を受けるから、その
上に積層するクラッド層３′の積層不備や結晶品質の劣
化、あるいはクラッド層３とクラッド層３′の界面での
高抵抗化等が問題となる。また、クラッド層３とクラッ
ド層３′の界面は、活性層にごく近いから、レーザ発振
時に光密度が高く、また電流注入路でもあるので、界面
に多数存在する欠陥は、このレーザの劣化を早め、信頼
性が得られないことも心配される。Next, the structure of FIG. 6 will be described. In Figure 6, GaAs
In the case of the / AlGaAs semiconductor, a self-aligned laser normally produced by the MOVPE method is shown. In FIG. 6, as in FIG. 4, the current blocking layer 4 is formed of AlGaIn having a larger Al composition than AlGaInP in the current injection portion.
P or AlInP is used so that there is a difference in the actual refractive index. The biggest problem with this structure is the current GaAs / A
Similar to the problem with the 1GaAs self-aligned laser, it may be the interface between the cladding layer 3 and the cladding layer 3'at the current injection portion. In the structure shown in FIG. 6, after the current blocking layer 4 is laminated by the first MOVPE growth, the current blocking layer 4 is partially removed in the current injection portion to form a current injection path, and then the cladding layer 3 ′ is formed. And the cap layer 5 is laminated and manufactured. At this time, since the surface of the clad layer 3 having a high Al composition is exposed to the atmosphere and is oxidized, the clad layer 3 ′ laminated on the clad layer 3 ′ has a defective stacking or deterioration of crystal quality, or the clad layer 3 and the clad layer 3 are deteriorated. There is a problem of high resistance at the 3'interface. Further, since the interface between the clad layer 3 and the clad layer 3'is very close to the active layer, the light density is high at the time of laser oscillation, and it is also a current injection path. Therefore, many defects existing at the interface cause deterioration of the laser. I'm also worried that I can't get credibility soon.
以上にゲイン・ガイド型横モード制御レーザの欠点及び
ＧａＡｓ／ＡｌＧａＡｓレーザより容易に類推される３
つの屈折率ガイド型レーザの問題点を列記した。従来技
術で得られる屈折率ガイド型レーザでは、いずれも、複
雑な工程が必要であり、高Ａｌ組成層の酸化による信頼
性への問題があり、エッチング等の制御性の要求が厳し
かった。As mentioned above, the defects of the gain-guided lateral mode control laser and the analogy with the GaAs / AlGaAs laser are easily inferred.
The problems of two index-guided lasers are listed. The refractive index guide type lasers obtained by the conventional techniques all require complicated steps, have a problem of reliability due to the oxidation of the high Al composition layer, and have severe controllability requirements such as etching.
そこで、本願発明の目的は、上記の諸問題を解決し、作
製が容易で、信頼性が高く、プロセス上の寛容度の大き
い屈折率ガイド型のＧａＩｎＰ／ＡｌＧａＩｎＰ横モー
ド制御半導体レーザの構造および製造方法を提供するこ
とにある。Therefore, an object of the present invention is to solve the above-mentioned problems, to fabricate a structure of a GaInP / AlGaInP lateral mode control semiconductor laser of a refractive index guide type which is easy to manufacture, has high reliability, and has a large process latitude. To provide a method.
（問題点を解決するための手段） 前述の問題点を解決するために本願の第１の発明が提供
する半導体レーザは、（０１１）方向のメサを有するＧ
ａＡｓ(100) 基板と、この基板の前記メサの上面および
底面に成長してあり当該メサ上面において別のメサを形
成しているＧａＡｓからなるバッファ層と、このバッフ
ァ層上においてメサ上面とメサ底面とを連結して成長し
てある第１のクラッド層と、この第１のクラッド層上に
おいてメサ上面とメサ底面を分離して成長してあるＧａ
ＩｎＰ活性層と、この活性層および前記第１のクラッド
層のメサ斜面上にメサ上面とメサ底面とを連結して成長
してある第２のクラッド層とを含んでなり、前記第１及
び第２のクラッド層はＡｌＧａＩｎＰ又はＡｌＩｎＰか
らなり前記活性層より禁制帯幅が大きいことを特徴とす
る。(Means for Solving Problems) A semiconductor laser provided by the first invention of the present application in order to solve the above problems has a G having a (011) direction mesa.
aAs (100) substrate, a buffer layer made of GaAs grown on the top and bottom surfaces of the mesa of the substrate and forming another mesa on the mesa upper surface, and the mesa top surface and the mesa bottom surface on the buffer layer. A first clad layer that is grown by connecting the above and a Ga that is grown on the first clad layer by separating the mesa top surface and the mesa bottom surface from each other.
An InP active layer and a second cladding layer grown on the mesa slope of the active layer and the first cladding layer by connecting the upper surface of the mesa and the bottom surface of the mesa. The second cladding layer is made of AlGaInP or AlInP and has a band gap larger than that of the active layer.
前述の問題点を解決するために本願の第２の発明が提供
する半導体レーザの製造方法は、ＧａＡｓ(100) 基板上
に(011) 方向のメサをエッチングにより形成する工程
と、前記メサ基板上に有機金属熱分解気相成長法（以下
ＭＯＶＰＥ法と略記。）によりＧａＡｓからなるバッフ
ァ層を積層する工程と、前記バッファ層上にＭＯＶＰＥ
法によりＡｌＧａＩｎＰ又はＡｌＩｎＰでなる第１のク
ラッド層をメサ上面，底面および側面に積層する工程
と、前記第１のクラッド層より禁制帯幅が小さいＧａＩ
ｎＰでなる活性層をメサ上面と底面に互いに分離して積
層する工程と、前記活性層より禁制帯幅が大きいＡｌＧ
ａＩｎＰ又はＡｌＩｎＰでなる第２のクラッド層をメサ
上面，底面および側面に積層する工程とをこの順に含む
ことを特徴とする。In order to solve the above-mentioned problems, a method of manufacturing a semiconductor laser provided by a second invention of the present application is a method of forming a (011) direction mesa on a GaAs (100) substrate by etching, and a method of forming a mesa on the mesa substrate. And a step of laminating a buffer layer made of GaAs by metalorganic pyrolysis vapor phase epitaxy (hereinafter abbreviated as MOVPE method), and MOVPE on the buffer layer.
Laminating a first clad layer made of AlGaInP or AlInP on the upper surface, bottom surface and side surface of the mesa by a method, and GaI having a bandgap smaller than that of the first clad layer.
a step of separately laminating an active layer made of nP on the top and bottom surfaces of the mesa, and AlG having a band gap larger than that of the active layer.
and a step of laminating a second cladding layer made of aInP or AlInP on the top surface, bottom surface and side surface of the mesa in this order.
（実施例） 次に、本願の第１の発明の一実施例であるＧａＩｎＰ／
ＡｌＧａＩｎＰ屈折率ガイド型横モード制御半導体レー
ザの構造図を第１図に、その製作工程（本願の第２の発
明の一実施例）の工程を第２図に示す。(Example) Next, GaInP / which is one example of the first invention of the present application
FIG. 1 shows a structural view of an AlGaInP refractive index guide type lateral mode control semiconductor laser, and FIG. 2 shows a manufacturing process thereof (one embodiment of the second invention of the present application).
まず、第１図および第２図を用いて、本実施例のレーザ
構造の構成を説明する。ＧａＡｓ(100) 基板６上に、(0
11) 方向のメサ、一般に逆メサと呼ばれるメサを形成す
る（第２図（ａ））。次に、このメサ上に、ＧａＡｓよ
りなるバッファ層９を積層する（第２図（ｂ））。この
時、メサ上に積層したＧａＡｓの側面は、(111)Ｂ面を
保持し、最終的に三角形の形状でメサ上の成長が終了す
ることが知られている（参考文献：昭和61年度秋季応用
物理学会講演会予稿集27P-T-14（p.p.160））。これ
は、(111) Ｂ面が、ＧａＡｓ／ＡｌＧａＡｓのＭＯＶＰ
Ｅ法による結晶成長の場合、極端に成長レートが遅い非
成長面であるためと考えられている。次に、この(111)
Ｂ面を側面に有するＧａＡｓメサ上に、ＡｌＧａＩｎＰ
またはＡｌＩｎＰよりなるクラッド層２、ＧａＩｎＰよ
りなる活性層１（第２図（ｃ））、ＡｌＧａＩｎＰまた
はＡｌＩｎＰよりなるクラッド層３、基板と同じ導電型
のＧａＡｓよりなる電流ブロック層４を、順次にＭＯＶ
ＰＥ法により積層し、ダブルヘテロ構造を形成する（第
２図（ｄ））。この時、メサ側面への積層に着目する
と、クラッド層となるＡｌＧａＩｎＰまたはＡｌＩｎＰ
では、(111) Ｂ面のメサ側面も、(100) 面のメサ上面及
びメサ底面とほぼ同等の成長レートで結晶成長する。こ
れは、ＧａＡｓ／ＡｌＧａＡｓと比較し、まったく積層
が異なる。ＧａＡｓ／ＡｌＧａＡｓの場合では、メサ側
面か底面からの成長の這い上がりにより、(111) Ｂ面か
らある程度のずれを生じてからのみ側面への成長が開始
される。First, the structure of the laser structure of this embodiment will be described with reference to FIGS. 1 and 2. On the GaAs (100) substrate 6, (0
11) Directional mesas, generally called reverse mesas, are formed (Fig. 2 (a)). Next, the buffer layer 9 made of GaAs is laminated on this mesa (FIG. 2B). At this time, it is known that the side surface of GaAs stacked on the mesa retains the (111) B plane, and the growth on the mesa ends up in a triangular shape at the end (Reference: Autumn of 1986). Proceedings of the Japan Society of Applied Physics 27P-T-14 (pp160)). This is because the (111) B plane is a GaAs / AlGaAs MOVP.
It is considered that in the case of crystal growth by the E method, the growth rate is extremely slow on the non-growth surface. Then this (111)
AlGaInP is formed on the GaAs mesa having the B surface on the side surface.
Alternatively, a clad layer 2 made of AlInP, an active layer 1 made of GaInP (FIG. 2 (c)), a clad layer 3 made of AlGaInP or AlInP, and a current block layer 4 made of GaAs having the same conductivity type as the substrate are sequentially formed by MOV.
The layers are laminated by the PE method to form a double hetero structure (FIG. 2 (d)). At this time, paying attention to the stacking on the side surface of the mesa, AlGaInP or AlInP to be the cladding layer.
Then, crystal growth also occurs on the mesa side surface of the (111) B plane at a growth rate almost equal to that of the mesa top surface and mesa bottom surface of the (100) plane. This is completely different in stacking compared to GaAs / AlGaAs. In the case of GaAs / AlGaAs, the growth on the side surface or the bottom surface of the mesa causes a certain amount of deviation from the (111) B surface to start the growth on the side surface.
一方、活性層となるＧａＩｎＰでは、(111) Ｂ面もしく
は(111) Ｂ面から数度以内の高指数面への成長レート
は、(100) 面への積層に比べて極端に遅いことが本発明
者の実験により、判明した。これは、ＧａＡｓが(111)
Ｂ面上に極端に成長しにくいことと、同様な機構が働い
ているものと推察される。従って、第２図のような方法
で、まずＧａＡｓからなるバッファ層９を積層すること
により、側面に(111) Ｂ面を有する新たなメサ構造を形
成し、その上にＧａＩｎＰを活性層とするダブルヘテロ
構造を積層することにより、メサ上部でＧａＩｎＰ活性
層がＡｌＧａＩｎＰまたはＡｌＩｎＰからなるクラッド
層で埋込まれた、ＢＨ構造の半導体レーザが形成可能と
なる。このとき、活性層側面を埋込むから、底面の這い
上がり成長を待つ必要はない。そして、最後に、Ｚｎ拡
散による導電型の反転を利用して、電流注入路を作製す
る（第２図（ｅ））。On the other hand, in GaInP, which is the active layer, the growth rate on the (111) B plane or on the high index plane within a few degrees of the (111) B plane is extremely slow compared to the stacking on the (100) plane. It was revealed by the inventor's experiment. This is because GaAs is (111)
It is presumed that it is extremely difficult to grow on the B side and that a similar mechanism works. Therefore, a new mesa structure having a (111) B plane on the side surface is formed by first laminating a buffer layer 9 made of GaAs by the method as shown in FIG. 2, and GaInP is used as an active layer on the mesa structure. By stacking the double hetero structure, it becomes possible to form a BH structure semiconductor laser in which the GaInP active layer is filled with a cladding layer made of AlGaInP or AlInP on the mesa. At this time, since the side surface of the active layer is buried, it is not necessary to climb up the bottom surface and wait for growth. Then, finally, a current injection path is formed by utilizing the inversion of the conductivity type by Zn diffusion (FIG. 2 (e)).
本構造の最大の利点は、ＧａＩｎＰ／ＡｌＧａＩｎＰ半
導体材料のＭＯＶＰＥ成長特性を巧みに利用し、屈折率
ガイド構造の半導体レーザを１回のＭＯＶＰＥ成長で作
製できる点である。第４図、第５図および第６図に例示
した従来技術で作製されるレーザでは高Ａｌ組成のＡｌ
ＧａＩｎＰまたはＡｌＩｎＰが製作工程で大気中に露出
されて酸化されるが、第２図の工程で製作される第１図
の実施例ではそれらの高Ａｌ組成分が酸化されないか
ら、ＡｌＧａＩｎＰ半導体結晶の高品質化、さらには、
本レーザの高信頼化の可能性が非常に高くなる。また、
ダブルヘテロ構造の積層後にエッチング工程を含まない
から、成長層厚およびエッチング深さの厳しい制約がな
く、プロセス上の寛容度が増大する。The greatest advantage of this structure is that the MOVPE growth characteristics of the GaInP / AlGaInP semiconductor material can be skillfully used to fabricate a semiconductor laser having a refractive index guide structure by one MOVPE growth. In the laser manufactured by the conventional technique illustrated in FIGS. 4, 5, and 6, Al having a high Al composition is used.
Although GaInP or AlInP is exposed to the atmosphere and oxidized in the manufacturing process, the high Al composition is not oxidized in the embodiment of FIG. 1 manufactured in the process of FIG. Quality improvement,
The possibility of high reliability of this laser becomes very high. Also,
Since no etching step is included after the stacking of the double hetero structure, there is no severe restriction on the growth layer thickness and the etching depth, and the process latitude is increased.
以上に本願発明の効果を列挙したように、本願発明のレ
ーザ構造および製造方法を採用することにより、屈折率
ガイド型のＧａＩｎＰ／ＡｌＧａＩｎＰ半導体レーザが
１回のＭＯＶＰＥ成長により容易な工程で作製でき、し
たがってＡｌＧａＩｎＰ結晶の品質が向上し、ひいては
信頼性および制御性に優れた半導体レーザが得られる。As described above, by adopting the laser structure and the manufacturing method of the present invention, a refractive index guide type GaInP / AlGaInP semiconductor laser can be manufactured by a single MOVPE growth in an easy process. Therefore, the quality of the AlGaInP crystal is improved, and thus a semiconductor laser excellent in reliability and controllability can be obtained.
以下に上述の実施例については具体数値を挙げてさらに
詳細に説明する。ｎ形ＳｉドープＧａＡｓ(100) 基板６
上に、Ｈ２ＳＯ４とＨ２Ｏ２とＨ２Ｏの混合液によるエ
ッチングで、(011) 方向のメサを形成する。メサの高さ
は、3.0 μｍとした。次に、ＭＯＶＰＥ法により、この
メサ基板上に、厚さ2.5 μｍのＳｅドープＧａＡｓより
なるバッファ層９を積層し、メサ側面に、(111) Ｂ面を
有する新たなメサを形成した後、厚さ1.0 μｍのＳｅド
ープ（Ａｌ0.4 Ｇａ0.6 ）0.5 Ｉｎ0.5 Ｐよりなるクラ
ッド層２、厚さ0.1 μｍのノンドープＧａ0.5 Ｉｎ0.5
Ｐよりなる活性層１、厚さ1.0 μｍのＺｎドープ（Ａｌ
0.4 Ｇａ0.6 ）0.5 Ｉｎ0.5 Ｐよりなるクラッド層３、
厚さ0.5 μｍのＳｅドープＧａＡｓよりなる電流ブロッ
ク層４をこの順に積層し、ＧａＩｎＰ／ＡｌＧａＩｎＰ
ダブルヘテロ構造を形成した。そして、最後に、電流注
入部形成のため、メサ上部のみにクラッド層３に至るま
での深さにＺｎ拡散を行った。The above-mentioned embodiments will be described in more detail below by giving specific numerical values. n-type Si-doped GaAs (100) substrate 6
Mesa in the (011) direction is formed on the upper surface by etching with a mixed solution of H 2 SO 4 , H 2 O 2 and H 2 O. The height of the mesa was 3.0 μm. Then, a buffer layer 9 made of Se-doped GaAs having a thickness of 2.5 μm is laminated on the mesa substrate by MOVPE method, and a new mesa having a (111) B plane is formed on the side surface of the mesa. 1.0 μm thick Se-doped (Al 0.4 Ga 0.6 ) 0.5 In 0.5 P cladding layer 2, 0.1 μm thick undoped Ga 0.5 In 0.5
Active layer 1 of P, 1.0 μm thick Zn-doped (Al
Clad layer 3 made of 0.4 Ga 0.6 ) 0.5 In 0.5 P,
A current blocking layer 4 made of Se-doped GaAs having a thickness of 0.5 μm is laminated in this order, and GaInP / AlGaInP is formed.
A double heterostructure was formed. Then, finally, in order to form a current injection portion, Zn was diffused only to the upper portion of the mesa to a depth reaching the cladding layer 3.
以上の様にして、本実施例の半導体レーザを製作した。As described above, the semiconductor laser of this example was manufactured.
（発明の効果） 上記半導体レーザでは、屈折率ガイド構造を作るのに、
１回のメサ・エッチングと１回のＭＯＶＰＥ成長という
容易な工程で製作可能で、従来に比して製作上の問題点
が大幅に軽減されている。また、上記レーザでは、高Ａ
ｌ組成の半導体層が一度も大気中で露出されることがな
いから、ＤＨ構造を形成する結晶の高品質化、さらに
は、高信頼性が期待できる。また、上記レーザは、エッ
チング深さ等の厳しい制御性が要求されず、プロセスの
寛容度が大である。(Effects of the Invention) In the above semiconductor laser, in order to form the refractive index guide structure,
It can be manufactured by the easy process of one time of mesa etching and one time of MOVPE growth, and the manufacturing problems are greatly reduced compared to the conventional method. In addition, in the above laser, high A
Since the semiconductor layer having the l composition is never exposed in the atmosphere, it is expected that the crystal forming the DH structure has high quality and high reliability. Further, the above laser does not require strict controllability such as etching depth, and has a large process latitude.
以上に述べた様に、本願の第１の発明のＧａＩｎＰ／Ａ
ｌＧａＩｎＰ半導体レーザは、１回のＭＯＶＰＥ成長で
製作できる作製容易で、高信頼化が期待できる、プロセ
ス上の寛容度の大きい、屈折率ガイド型半導体レーザで
ある。本願の第２の発明はその本願の第１の発明の半導
体レーザの製造方法を提供するものである。As described above, the GaInP / A of the first invention of the present application
The 1GaInP semiconductor laser is a refractive index guide type semiconductor laser that can be manufactured by one MOVPE growth, is easy to manufacture, and can be expected to have high reliability, and has a large process latitude. A second invention of the present application provides a method for manufacturing a semiconductor laser according to the first invention of the present application.
第１図は本願の第１の発明の屈折率ガイド型半導体レー
ザの断面模式図、第２図は第１図のレーザの製作工程
図、第３図は従来のロス・ガイド型半導体レーザの断面
模式図、第４図，第５図および第６図は従来の屈折率ガ
イド型半導体レーザの断面模式図である。 １……活性層、２，３，３′……クラッド層、４……電
流ブロック層（第１図，第２図，第３図ではＧａＡｓ、
第４図，第６図では電流注入部のＡｌＧａＩｎＰよりも
Ａｌ組成の大きいＡｌＧａＩｎＰまたはＡｌＩｎＰ）、
５……キャップ層、６……ＧａＡｓ基板、７，８……電
流ブロック層（活性層よりＡｌ組成の大きなＡｌＧａＩ
ｎＰまたはＡｌＩｎＰ）、９……バッファ層、10……Ｚ
ｎ拡散領域。FIG. 1 is a schematic sectional view of a refractive index guide type semiconductor laser of the first invention of the present application, FIG. 2 is a manufacturing process drawing of the laser of FIG. 1, and FIG. 3 is a cross section of a conventional loss guide type semiconductor laser. FIG. 4, FIG. 4, FIG. 5 and FIG. 6 are schematic sectional views of a conventional index-guided semiconductor laser. 1 ... Active layer, 2, 3, 3 '... Cladding layer, 4 ... Current blocking layer (GaAs in FIGS. 1, 2, 3)
4 and 6, AlGaInP or AlInP having a larger Al composition than AlGaInP in the current injection portion),
5 ... Cap layer, 6 ... GaAs substrate, 7, 8 ... Current blocking layer (AlGaI having a larger Al composition than the active layer)
nP or AlInP), 9 ... buffer layer, 10 ... Z
n diffusion region.
Claims (2)
（１００）基板と、この基板の前記メサの上面および底
面に成長してあり当該メサ上面において別のメサを形成
しているＧａＡｓからなるバッファ層と、このバッファ
層上においてメサ上面とメサ底面とを連結して成長して
ある第１のクラッド層と、この第１のクラッド層上にお
いてメサ上面とメサ底面を分離して成長してあるＧａＩ
ｎＰ活性層と、この活性層および前記第１のクラッド層
のメサ斜面上にメサ上面とメサ底面とを連結して成長し
てある第２のクラッド層とを含んでなり、前記第１及び
第２のクラッド層はＡｌＧａＩｎＰ又はＡｌＩｎＰから
なり前記活性層より禁制帯幅が大きいことを特徴とする
半導体レーザ。1. GaAs having (011) direction mesas
A (100) substrate, a buffer layer of GaAs grown on the top and bottom surfaces of the mesa of the substrate and forming another mesa on the mesa surface, and a mesa top surface and a mesa bottom surface on the buffer layer. Of the first clad layer that is grown by connecting the first and second layers of GaI and the GaI that is grown on the first clad layer with the upper surface of the mesa and the bottom surface of the mesa separated.
an nP active layer; and a second cladding layer grown by connecting the mesa top surface and the mesa bottom surface on the mesa slope of the active layer and the first cladding layer. A semiconductor laser characterized in that the second cladding layer is made of AlGaInP or AlInP and has a band gap larger than that of the active layer.
向のメサをエッチングにより形成する工程と、前記メサ
基板上に有機金属熱分解気相成長法（以下ＭＯＶＰＥ法
と略記。）によりＧａＡｓからなるバッファ層を積層す
る工程と、前記バッファ層上にＭＯＶＰＥ法によりＡｌ
ＧａＩｎＰ又はＡｌＩｎＰでなる第１のクラッド層をメ
サ上面，底面および側面に積層する工程と、前記第１の
クラッド層より禁制帯幅が小さいＧａＩｎＰでなる活性
層をメサ上面と底面に互いに分離して積層する工程と、
前記活性層より禁制帯幅が大きいＡｌＧａＩｎＰ又はＡ
ｌＩｎＰでなる第２のクラッド層をメサ上面，底面およ
び側面に積層する工程とをこの順に含むことを特徴とす
る半導体レーザの製造方法。2. A step of forming a mesa in the (011) direction on a GaAs (100) substrate by etching, and a step of forming a metal on the mesa substrate from GaAs by a metal organic thermal decomposition vapor phase epitaxy method (hereinafter abbreviated as MOVPE method). A step of laminating a buffer layer formed of Al by a MOVPE method on the buffer layer.
A step of stacking a first cladding layer made of GaInP or AlInP on the top surface, bottom surface and side surface of the mesa; and an active layer made of GaInP having a bandgap smaller than that of the first cladding layer is separated into a top surface and a bottom surface of the mesa. Stacking process,
AlGaInP or A having a forbidden band width larger than that of the active layer
and a step of laminating a second cladding layer made of lInP on the top surface, bottom surface, and side surface of the mesa in this order.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62189839A JPH0646669B2 (en) | 1987-07-28 | 1987-07-28 | Semiconductor laser and manufacturing method thereof |
| EP88306916A EP0301826A3 (en) | 1987-07-28 | 1988-07-27 | A semiconductor laser of a refractive index-guided type and a process for fabricating the same |
| US07/225,454 US4852110A (en) | 1987-07-28 | 1988-07-28 | Semiconductor laser of a refractive index-guided type and a process for fabricating the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62189839A JPH0646669B2 (en) | 1987-07-28 | 1987-07-28 | Semiconductor laser and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6432692A JPS6432692A (en) | 1989-02-02 |
| JPH0646669B2 true JPH0646669B2 (en) | 1994-06-15 |
Family
ID=16248069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62189839A Expired - Lifetime JPH0646669B2 (en) | 1987-07-28 | 1987-07-28 | Semiconductor laser and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4852110A (en) |
| EP (1) | EP0301826A3 (en) |
| JP (1) | JPH0646669B2 (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8622767D0 (en) * | 1986-09-22 | 1986-10-29 | British Telecomm | Semiconductor structures |
| JP2752423B2 (en) * | 1989-03-31 | 1998-05-18 | 三菱電機株式会社 | Method for diffusing Zn into compound semiconductor |
| JP2827326B2 (en) * | 1989-09-27 | 1998-11-25 | 住友電気工業株式会社 | Manufacturing method of semiconductor laser |
| US5255281A (en) * | 1990-04-26 | 1993-10-19 | Fujitsu Limited | Semiconductor laser having double heterostructure |
| US5202285A (en) * | 1990-04-26 | 1993-04-13 | Fujitsu Limited | Semiconductor laser having double heterostructure and method of producing same |
| EP0454476A3 (en) | 1990-04-26 | 1992-04-01 | Fujitsu Limited | Semiconductor laser having double heterostructure and method of producing the same |
| US5179040A (en) * | 1990-07-16 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor laser device |
| JPH0474488A (en) * | 1990-07-16 | 1992-03-09 | Mitsubishi Electric Corp | Semiconductor laser and manufacture thereof |
| US5335241A (en) * | 1990-08-30 | 1994-08-02 | Sharp Kabushiki Kaisha | Buried stripe type semiconductor laser device |
| JP2508409B2 (en) * | 1990-11-26 | 1996-06-19 | 三菱電機株式会社 | Semiconductor laser equipment |
| JPH04236468A (en) * | 1991-01-18 | 1992-08-25 | Toshiba Corp | Light emitting diode device for optical communication |
| JP2943510B2 (en) * | 1991-08-09 | 1999-08-30 | 日本電気株式会社 | Tunable semiconductor laser device |
| EP0533197A3 (en) * | 1991-09-20 | 1993-11-03 | Fujitsu Ltd | Stripe laser diode having an improved efficiency for current confinement |
| US5208821A (en) * | 1992-01-24 | 1993-05-04 | At&T Bell Laboratories | Buried heterostructure lasers using MOCVD growth over patterned substrates |
| JP3472714B2 (en) * | 1999-01-25 | 2003-12-02 | シャープ株式会社 | Method for manufacturing semiconductor light emitting device |
| US6577658B1 (en) * | 1999-09-20 | 2003-06-10 | E20 Corporation, Inc. | Method and apparatus for planar index guided vertical cavity surface emitting lasers |
| NL1015714C2 (en) * | 2000-07-14 | 2002-01-15 | Dsm Nv | Process for crystallizing enantiomerically enriched 2-acetylthio-3-phenylpropanoic acid. |
| JP4853008B2 (en) * | 2005-12-14 | 2012-01-11 | 住友電気工業株式会社 | Method for fabricating a semiconductor optical device |
| JP7330128B2 (en) * | 2020-04-02 | 2023-08-21 | 浜松ホトニクス株式会社 | Quantum cascade laser device and quantum cascade laser device |
| JP7421989B2 (en) * | 2020-04-02 | 2024-01-25 | 浜松ホトニクス株式会社 | Quantum cascade laser device and quantum cascade laser device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4099305A (en) * | 1977-03-14 | 1978-07-11 | Bell Telephone Laboratories, Incorporated | Fabrication of mesa devices by MBE growth over channeled substrates |
| US4429397A (en) * | 1980-06-26 | 1984-01-31 | Nippon Electric Co., Ltd. | Buried heterostructure laser diode |
| US4523318A (en) * | 1982-10-29 | 1985-06-11 | Rca Corporation | Semiconductor laser having high manufacturing yield |
| JPS59129486A (en) * | 1983-01-14 | 1984-07-25 | Toshiba Corp | Semiconductor laser device and manufacture thereof |
| GB2154059B (en) * | 1984-01-25 | 1987-10-28 | Hitachi Ltd | Light emitting chip and communication apparatus using the same |
| JPS60154689A (en) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | Light emitting element and lighr communication equipment using the same |
| JPS60192379A (en) * | 1984-03-12 | 1985-09-30 | Mitsubishi Electric Corp | semiconductor laser equipment |
| JPS6129189A (en) * | 1984-07-19 | 1986-02-10 | Sanyo Electric Co Ltd | Semiconductor laser |
| JP2716693B2 (en) * | 1985-02-08 | 1998-02-18 | ソニー株式会社 | Semiconductor laser |
| JPS6225485A (en) * | 1985-07-25 | 1987-02-03 | Mitsubishi Electric Corp | Semiconductor laser device |
-
1987
- 1987-07-28 JP JP62189839A patent/JPH0646669B2/en not_active Expired - Lifetime
-
1988
- 1988-07-27 EP EP88306916A patent/EP0301826A3/en not_active Ceased
- 1988-07-28 US US07/225,454 patent/US4852110A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6432692A (en) | 1989-02-02 |
| US4852110A (en) | 1989-07-25 |
| EP0301826A3 (en) | 1990-03-21 |
| EP0301826A2 (en) | 1989-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0646669B2 (en) | Semiconductor laser and manufacturing method thereof | |
| JPH11274635A (en) | Semiconductor light emitting device | |
| JPH05275798A (en) | Laser diode | |
| JP2752423B2 (en) | Method for diffusing Zn into compound semiconductor | |
| JPH0656906B2 (en) | Semiconductor laser device | |
| US6639926B1 (en) | Semiconductor light-emitting device | |
| JPH09199791A (en) | Optical semiconductor device and its manufacture | |
| JP2001057459A (en) | Semiconductor laser | |
| JP2001077465A (en) | Semiconductor laser and manufacture thereof | |
| JP2000340891A (en) | Semiconductor optical device | |
| JP2502835B2 (en) | Semiconductor laser and manufacturing method thereof | |
| JPH11340585A (en) | Semiconductor light emitting device | |
| JPH11126945A (en) | Manufacture of strained semiconductor crystal and manufacture of semiconductor laser using it | |
| JP3022351B2 (en) | Optical semiconductor device and method of manufacturing the same | |
| JPH0666525B2 (en) | Semiconductor laser | |
| JP2001102691A (en) | Semiconductor laser and method for oxidizing semiconductor layer | |
| JPH0634427B2 (en) | Semiconductor laser manufacturing method | |
| JPH0658987B2 (en) | Semiconductor laser and manufacturing method thereof | |
| JPH0563293A (en) | AlGaInP-based semiconductor laser device and manufacturing method thereof | |
| JPH0430758B2 (en) | ||
| JPH0632334B2 (en) | Semiconductor laser | |
| JP2000312052A (en) | Semiconductor optical device | |
| JPH04130692A (en) | Semiconductor laser and manufacture thereof | |
| JP2010016118A (en) | Semiconductor laser device and fabrication process therefor | |
| JPH06252508A (en) | Semiconductor laser |