JPH06502747A - 硬ｘ線を集束する装置および方法 - Google Patents

硬ｘ線を集束する装置および方法

Info

Publication number
JPH06502747A
JPH06502747A JP5503545A JP50354593A JPH06502747A JP H06502747 A JPH06502747 A JP H06502747A JP 5503545 A JP5503545 A JP 5503545A JP 50354593 A JP50354593 A JP 50354593A JP H06502747 A JPH06502747 A JP H06502747A
Authority
JP
Japan
Prior art keywords
crystal
dislocation
lattice constant
length
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5503545A
Other languages
English (en)
Japanese (ja)
Inventor
バリー、ビクター
ローレンス、アルバート・エフ
チャング、デイビッド・ビー
Original Assignee
ヒューズ・エアクラフト・カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ヒューズ・エアクラフト・カンパニー filed Critical ヒューズ・エアクラフト・カンパニー
Publication of JPH06502747A publication Critical patent/JPH06502747A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/062—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements the element being a crystal

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP5503545A 1991-07-26 1992-06-15 硬ｘ線を集束する装置および方法 Pending JPH06502747A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/736,153 US5210779A (en) 1991-07-26 1991-07-26 Apparatus and method for focusing hard x-rays
US736,153 1991-07-26
PCT/US1992/005042 WO1993003424A1 (en) 1991-07-26 1992-06-15 Apparatus and method for focusing hard x-rays

Publications (1)

Publication Number Publication Date
JPH06502747A true JPH06502747A (ja) 1994-03-24

Family

ID=24958717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5503545A Pending JPH06502747A (ja) 1991-07-26 1992-06-15 硬ｘ線を集束する装置および方法

Country Status (7)

Country Link
US (1) US5210779A (2)
EP (1) EP0550734A1 (2)
JP (1) JPH06502747A (2)
KR (1) KR950012546B1 (2)
CA (1) CA2089557A1 (2)
TW (1) TW207030B (2)
WO (1) WO1993003424A1 (2)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880467A (en) * 1997-03-05 1999-03-09 The United States Of America As Represented By The Secretary Of Commerce Microcalorimeter x-ray detectors with x-ray lens
US6389100B1 (en) * 1999-04-09 2002-05-14 Osmic, Inc. X-ray lens system
CZ299759B6 (cs) * 2007-07-20 2008-11-12 Ceské vysoké ucení technické v Praze Optický clen pro rentgenovou mikroskopii

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106031A (en) * 1980-12-23 1982-07-01 Toshiba Corp Transferring device for fine pattern
US4429411A (en) * 1981-04-20 1984-01-31 The United States Of America As Represented By The United States Department Of Energy Instrument and method for focusing X-rays, gamma rays and neutrons
DE3217235A1 (de) * 1982-05-07 1983-11-24 Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zum erzeugen eines hochkollimierten roentgenstrahlungsbuendels durch sechsstrahl-borrmann-beugung
JPS6221223A (ja) * 1985-07-19 1987-01-29 Shimadzu Corp 軟ｘ線用投影結像装置
US5063586A (en) * 1989-10-13 1991-11-05 At&T Bell Laboratories Apparatus for semiconductor lithography
US4987582A (en) * 1989-10-19 1991-01-22 Hughes Aircraft Company X-ray fluorescence imaging of elements

Also Published As

Publication number Publication date
TW207030B (2) 1993-06-01
KR950012546B1 (ko) 1995-10-18
CA2089557A1 (en) 1993-01-27
EP0550734A1 (en) 1993-07-14
WO1993003424A1 (en) 1993-02-18
US5210779A (en) 1993-05-11

Similar Documents

Publication Publication Date Title
US9372413B2 (en) Optical apparatus for conditioning a radiation beam for use by an object, lithography apparatus and method of manufacturing devices
US6678037B2 (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
US4028547A (en) X-ray photolithography
Svetina et al. PRESTO, the on-line photon energy spectrometer at FERMI: design, features and commissioning results
DE69121972T2 (de) Röntgenstrahlenmikroskop
EP1785771A2 (en) Method for producing an image on a material sensitive to a used radiation, method for obtaining a binary hologram (variants) and methods for producing an image by using said hologram
TW201202867A (en) EUV radiation source and EUV radiation generation method
US11392022B2 (en) Extreme ultraviolet lithography method, extreme ultraviolet mask and formation method thereof
Zhang et al. Producing focused extreme ultraviolet vortex with Fermat-spiral photon sieves
US5612986A (en) X-ray lithography using holographic images
EP1197803B1 (en) Lithographic apparatus
JPH06502747A (ja) 硬ｘ線を集束する装置および方法
US6686290B2 (en) Method of forming a fine pattern
JP2004529388A (ja) Ｘ線用途分野のためのハイブリッド光学部品、および関連する方法
Turcu et al. Spatial coherence measurements and x‐ray holographic imaging using a laser‐generated plasma x‐ray source in the water window spectral region
Leskova et al. The design and fabrication of one-dimensional random surfaces with specified scattering properties
Bollanti et al. First results of high-resolution patterning by the ENEA laboratory-scale extreme ultraviolet projection lithography system
Pikuz et al. Easy spectrally tunable highly efficient X-ray backlighting schemes based on spherically bent crystals
JPS63316434A (ja) Ｘ線露光法
JP2008286920A (ja) 感光性基板に凹凸パターンを形成する方法及び干渉縞パターン露光装置
CN221884115U (zh) 一种反射式极紫外光刻胶检测装置
US20030099324A1 (en) X-ray exposure method, x-ray exposure apparatus, fine structure and semiconductor device
JP2941340B2 (ja) 半導体装置の製造方法
Vartanian et al. Development of a polycapillary collimator for point-source x-ray lithography
JP2023053904A (ja) 断層撮影装置用の多重ビーム分割及びリダイレクト装置、断層撮影装置、及び試料の３次元断層画像を取得するための方法