JPH0657639B2 - Method for controlling critical temperature of superconductor thin film by focused ion beam - Google Patents
Method for controlling critical temperature of superconductor thin film by focused ion beamInfo
- Publication number
- JPH0657639B2 JPH0657639B2 JP62163756A JP16375687A JPH0657639B2 JP H0657639 B2 JPH0657639 B2 JP H0657639B2 JP 62163756 A JP62163756 A JP 62163756A JP 16375687 A JP16375687 A JP 16375687A JP H0657639 B2 JPH0657639 B2 JP H0657639B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- critical temperature
- superconductor thin
- ion beam
- focused ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 34
- 239000002887 superconductor Substances 0.000 title claims description 25
- 238000010884 ion-beam technique Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims description 15
- 239000000203 mixture Substances 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 10
- 238000002513 implantation Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、集束イオンビームによる超伝導薄膜の臨界温
度制御方法に関するものである。TECHNICAL FIELD The present invention relates to a method for controlling a critical temperature of a superconducting thin film by a focused ion beam.
（従来の技術） 第５図(1)〜(3)は、通常の非集束イオンビームを用いた
超伝導薄膜の臨界温度制御方法を示している。従来、基
板５１上に、超伝導薄膜５２をスパッタ法等により形成
し、さらに、光リソグラフィ、電子ビームリソグラフィ
ー等によりノボラック系ポジ形フォトレジストパターン
等をイオン注入用マスク５３として形成する（第５図
(1)）。次に、超伝導体薄膜の構成元素の非集束イオン
ビーム６５を用いて、ウェハー全面を一括照射し、超伝
導体薄膜５２内に注入領域５４の超伝導薄膜の組成を制
御する（第５図(2)）。その後、イオン注入用マスク５
３を除去する。（第５図(3)）。(Prior Art) FIGS. 5 (1) to 5 (3) show a method of controlling the critical temperature of a superconducting thin film using a normal unfocused ion beam. Conventionally, a superconducting thin film 52 is formed on a substrate 51 by a sputtering method or the like, and a novolac type positive photoresist pattern or the like is formed as an ion implantation mask 53 by photolithography, electron beam lithography or the like (FIG. 5).
(1)). Next, the entire surface of the wafer is collectively irradiated with the unfocused ion beam 65 of the constituent elements of the superconductor thin film to control the composition of the superconducting thin film in the implantation region 54 in the superconductor thin film 52 (FIG. 5). (2)). After that, the ion implantation mask 5
Remove 3. (Fig. 5 (3)).
（発明が解決しようとする問題点） しかしながら、この方法では、マスク形成工程、マスク
除去工程があり、工程が長い。さらに、マスク形成を行
なうため超伝導薄膜とマスク材との界面汚染が生じる。(Problems to be Solved by the Invention) However, in this method, there are a mask forming step and a mask removing step, and the steps are long. Further, since the mask is formed, interface contamination between the superconducting thin film and the mask material occurs.
本発明の目的は工程が簡略化された集束イオンビームに
よる超伝導体薄膜の臨界温度制御方法を提供することで
ある。An object of the present invention is to provide a method for controlling a critical temperature of a superconductor thin film by a focused ion beam, which has a simplified process.
（問題点を解決するための手段） 本発明は、超伝導体薄膜に集束イオンビームにより局所
的に超伝導体薄膜の構成元素の選択ドーピングを行な
い、被選択ドーピング部分の組成を制御することによ
り、被選択ドーピング部の臨界温度を制御することを特
徴とする集束イオンビームによる超伝導体薄膜の臨界温
度制御を特徴とする集束イオンビームによる超伝導体薄
膜の臨界温度制御方法である。(Means for Solving Problems) According to the present invention, a constituent ion of a superconductor thin film is locally selectively doped with a focused ion beam in a superconductor thin film to control the composition of a selectively doped portion. , A method for controlling a critical temperature of a superconducting thin film by a focused ion beam, which is characterized by controlling a critical temperature of a selected doped portion.
（作用） 次に、本発明の原理について第１図及び第２図を用いて
説明する。第１図(1)，(2)は集束イオンビームによる超
伝導体薄膜の臨界温度制御方法を示している。基板１１
上に、超伝導体薄膜１２をスパッタ法等により形成する
（第１図(1)）。次に、超伝導体薄膜１２に、超伝導体
薄膜の構成元素の集束イオンビーム２４によりイオン注
入することにより注入領域１３を形成する。注入領域１
３はイオン注入により、超伝導体薄膜の組成が制御さ
れ、臨界温度がイオン注入ドーズ量により制御される。
第２図は、イオン注入ドーズ量と臨界温度との関係を示
したものである。横軸に臨界温度Ｔｃ（゜K）、縦軸に
抵抗Ｒ（Ω）をとっている。Ｔｃ１は超伝導体薄膜のイ
オン注入前の臨界温度を示している。イオン注入ドーズ
量Ｄ２，Ｄ３後の臨界温度はＴｃ２，Ｔｃ３である。イ
オン注入ドーズ量が大きい程、高温臨界温度を示す組成
に近づき、臨界温度が高くなる。即ち、ドーズ量はＤ２
＞Ｄ３であり、臨界温度はＴｃ１＜Ｔｃ２＜Ｔｃ３とな
る。この様に、イオン注入ドーズ量により、臨界温度が
制御できる。(Operation) Next, the principle of the present invention will be described with reference to FIGS. 1 and 2. Figures 1 (1) and (2) show a method of controlling the critical temperature of a superconductor thin film by a focused ion beam. Board 11
A superconductor thin film 12 is formed on the upper surface by a sputtering method or the like (FIG. 1 (1)). Next, the implanted region 13 is formed by implanting ions into the superconductor thin film 12 with the focused ion beam 24 of the constituent elements of the superconductor thin film. Injection area 1
In No. 3, the composition of the superconductor thin film is controlled by ion implantation, and the critical temperature is controlled by the ion implantation dose amount.
FIG. 2 shows the relationship between the ion implantation dose and the critical temperature. The horizontal axis shows the critical temperature T c (° K) and the vertical axis shows the resistance R (Ω). T c1 represents the critical temperature before ion implantation of the superconductor thin film. The critical temperatures after the ion implantation doses D 2 and D 3 are T c2 and T c3 . As the ion implantation dose amount increases, the composition approaches a high temperature critical temperature and the critical temperature increases. That is, the dose is D 2
> D 3 and the critical temperature is T c1 <T c2 <T c3 . In this way, the critical temperature can be controlled by the ion implantation dose amount.
（実施例） 以下、本発明の実施例について、第３図、第４図、第５
図を参照して説明する。第３図は、集束イオンビーム装
置の構成を示している。イオン源３０１に共晶合金イオ
ン源を用いて、Ｅ×Ｂ質量分離器３０４により、所望の
１つのイオン種のみをとり出し、基板３１０へ、最小
０．１μｍ程度の微細ビームでイオン注入する。計算機
制御によるビーム偏向により任意のパターンを任意の場
所にマスクレスでイオン注入できる。本実施例では、超
伝導体薄膜として、マグネトロンスパッター法で形成し
た０．１μｍ厚の高温超伝導体であるＹ−Ｂａ２−Ｃｕ
３−Ｏ７のＣｕ組成が少ないＹ−Ｂａ２−Ｃｕ３−ｘ−
Ｏ７薄膜を用いた。第４図(1)に示す様に、Ｙ−Ｂａ２
−Ｃｕ３−ｘ−Ｏ７スパッター薄膜の臨界温度は１５゜
Kである。この薄膜に、Ｙ−Ｃｕ共晶合金イオン源から
の１５０ＫＶの加速電圧でＣｕ＋イオン注入（注入レン
ジ０．１μｍ）した結果が、第４図(2)，(3)に示されて
いる。第４図(2)の１×１０１４／cm2ドーズでは臨界温
度５０゜K，第４図(3)の１×１０１６／cm2ドーズでは
臨界温度７５゜Kの臨界温度を示した。以上示した様
に、ドーズ量により、臨界温度制御が可能である。(Examples) Examples of the present invention will be described below with reference to FIGS. 3, 4, and 5.
It will be described with reference to the drawings. FIG. 3 shows the configuration of a focused ion beam device. A eutectic alloy ion source is used as the ion source 301, and only one desired ion species is extracted by the E × B mass separator 304, and ions are implanted into the substrate 310 with a fine beam of a minimum of about 0.1 μm. Ion implantation of an arbitrary pattern can be performed at an arbitrary place without a mask by beam deflection under computer control. In this example, as the superconductor thin film, Y-Ba 2 -Cu, which is a high-temperature superconductor having a thickness of 0.1 μm and formed by a magnetron sputtering method, is used.
3 Cu composition -O 7 is small Y-Ba 2 -Cu 3-x -
An O 7 thin film was used. As shown in FIG. 4 (1), Y-Ba 2
-Cu 3-x -O 7 critical temperature of sputtered thin films 15 °
K. The results of Cu + ion implantation (implantation range 0.1 μm) into this thin film at an acceleration voltage of 150 KV from a Y—Cu eutectic alloy ion source are shown in FIGS. 4 (2) and 4 (3). The critical temperature was 50 ° K at a dose of 1 × 10 14 / cm 2 in FIG. 4 (2), and the critical temperature was 75 ° K at a dose of 1 × 10 16 / cm 2 in FIG. 4 (3). As shown above, the critical temperature can be controlled by the dose amount.
この方法によれば超伝導体薄膜を例えばＩＣの配線とし
て用いるときに有用である。すなわち半導体素子を形成
した上に例えばＹ−Ｂａ２−Ｃｕ３−ｘ−Ｏ７の薄膜を
形成する。そのあと配線を形成したい部分に前記のよう
Ｃｕ＋の集束イオンビームを照射してその部分だけＹ−
Ｂａ２−Ｃｕ３−Ｏ７とすればその部分の臨界温度が配
線部分に比べ上昇する。ＩＣを両者の中間の温度で動作
させれば超伝導配線として動作する。This method is useful when the superconductor thin film is used as, for example, an IC wiring. That, for example, is formed a thin film of Y-Ba 2 -Cu 3-x -O 7 on the formation of the semiconductor device. Then, the portion where the wiring is to be formed is irradiated with the Cu + focused ion beam as described above, and only that portion is Y-
If Ba 2 —Cu 3 —O 7 is used , the critical temperature of that portion is higher than that of the wiring portion. If the IC is operated at an intermediate temperature between them, it will operate as superconducting wiring.
以上説明した実施例ではＣｕ＋イオンを用いたが、超伝
導体薄膜組成が高温超伝導体であるＹ−Ｂａ２−Ｃｕ３
−Ｏ７に対して、Ｙが少なければＹ＋，Ｂａが少なけれ
ばＢａ＋，Ｃが少なければＯ＋を用いればよい。イオン
の加速電圧は超伝導体薄膜の膜厚以上の注入レンジがあ
る様に設定すれば良い。さらに、ＬａＳｒＣｕＯ等の超
伝導体薄膜に対しても、同様に、集束イオンビームによ
り臨界温度制御ができる。Although Cu + ions were used in the examples described above, the composition of the superconductor thin film is Y-Ba 2 -Cu 3 which is a high temperature superconductor.
Against -O 7, Y if is less Y +, Ba + the less Ba is, C may be used if the O + fewer. The ion accelerating voltage may be set so that the implantation range is equal to or larger than the film thickness of the superconductor thin film. Further, for a superconductor thin film such as LaSrCuO, the critical temperature can be similarly controlled by the focused ion beam.
（発明の効果） 以上説明した様に、本発明の集束イオンビームによる超
伝導体薄膜の臨界温度制御方法によれば、マスクレス
で、任意のパターンを任意の場所にイオン注入できるた
め、従来の工程よりも簡略化され、かつ表面汚染なく、
超伝導薄膜の臨界温度制御をすることができる。(Effects of the Invention) As described above, according to the method for controlling the critical temperature of a superconductor thin film by a focused ion beam of the present invention, it is possible to perform ion implantation of an arbitrary pattern at an arbitrary position without a mask, and Simplified than the process, without surface contamination,
It is possible to control the critical temperature of the superconducting thin film.
第１図は本発明のプロセスを示す断面図、第２図は、本
発明の原理を示す図、第３図は集束イオンビーム装置の
構成図、第４図はＹ−Ｂａ２−Ｃｕ３−ｘ−Ｏ７超伝導
体薄膜へ１５０ＫＶ Ｃｕ＋イオン注入し、臨界温度と
抵抗との関係を測定した図、第５図は、従来の非集束イ
オンビームによる超伝導体薄膜の臨界温度制御プロセス
を示す断面図である。FIG. 1 is a sectional view showing the process of the present invention, FIG. 2 is a diagram showing the principle of the present invention, FIG. 3 is a configuration diagram of a focused ion beam apparatus, and FIG. 4 is Y-Ba 2 —Cu 3 −. FIG. 5 shows the critical temperature control process of the superconductor thin film by the conventional non-focused ion beam, in which the relationship between the critical temperature and the resistance was measured by implanting 150 KV Cu + ions into the x- O 7 superconductor thin film. It is sectional drawing shown.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 39/06 ＺＡＡ 9276−4Ｍ // Ｈ０１Ｂ 12/06 ＺＡＡ 7244−5Ｇ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical display location H01L 39/06 ZAA 9276-4M // H01B 12/06 ZAA 7244-5G
Claims (1)
所的に超伝導体薄膜の構成元素の選択ドーピングを行な
い、被選択ドーピング部分の組成を制御することによ
り、被選択ドーピング部の臨界温度を制御することを特
徴とする集束イオンビームによる超伝導体薄膜の臨界温
度制御方法。1. A critical temperature of a selectively doped portion is controlled by locally selectively doping a constituent element of the superconductor thin film with a focused ion beam in the superconductor thin film and controlling the composition of the selectively doped portion. A method for controlling a critical temperature of a superconductor thin film by a focused ion beam, which is characterized by controlling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62163756A JPH0657639B2 (en) | 1987-06-29 | 1987-06-29 | Method for controlling critical temperature of superconductor thin film by focused ion beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62163756A JPH0657639B2 (en) | 1987-06-29 | 1987-06-29 | Method for controlling critical temperature of superconductor thin film by focused ion beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS647431A JPS647431A (en) | 1989-01-11 |
| JPH0657639B2 true JPH0657639B2 (en) | 1994-08-03 |
Family
ID=15780103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62163756A Expired - Lifetime JPH0657639B2 (en) | 1987-06-29 | 1987-06-29 | Method for controlling critical temperature of superconductor thin film by focused ion beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0657639B2 (en) |
-
1987
- 1987-06-29 JP JP62163756A patent/JPH0657639B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS647431A (en) | 1989-01-11 |
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