JPH0663838B2 - Optical receiver for spectrum analysis using quantum wells - Google Patents
Optical receiver for spectrum analysis using quantum wellsInfo
- Publication number
- JPH0663838B2 JPH0663838B2 JP61188856A JP18885686A JPH0663838B2 JP H0663838 B2 JPH0663838 B2 JP H0663838B2 JP 61188856 A JP61188856 A JP 61188856A JP 18885686 A JP18885686 A JP 18885686A JP H0663838 B2 JPH0663838 B2 JP H0663838B2
- Authority
- JP
- Japan
- Prior art keywords
- quantum well
- spectrum analysis
- wavelength
- layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010183 spectrum analysis Methods 0.000 title claims description 15
- 230000003287 optical effect Effects 0.000 title claims description 13
- 239000010409 thin film Substances 0.000 claims description 29
- 238000010521 absorption reaction Methods 0.000 claims description 26
- 238000001514 detection method Methods 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 9
- 238000001228 spectrum Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Spectrometry And Color Measurement (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、組成の異なる多層薄膜からなる量子井戸を用
いたスペクトル分析用受光器に関する。The present invention relates to a photodetector for spectrum analysis using a quantum well composed of multi-layered thin films having different compositions.
光ファイバーケーブルを媒体とする光通信によれば、通
信容量が従来の電線ケーブルを媒体とする電気通信に比
べて飛躍的にのびるのが特長である。通信技術や半導体
の製造技術等の進歩に伴い、この光通信が注目され、今
後の情報通信の主役となるべく脚光を浴びてきた。特に
光通信では、光信号の伝送、光信号の選択演算処理、電
気信号との変換等に使用される各種デバイスの開発が重
要な課題になり、その研究、開発が盛んに行われてい
る。The optical communication using the optical fiber cable as a medium has a feature that the communication capacity is dramatically increased as compared with the conventional electric communication using the electric cable as a medium. With the progress of communication technology and semiconductor manufacturing technology, this optical communication has been attracting attention and has been in the limelight as a protagonist of future information communication. Particularly in optical communication, the development of various devices used for optical signal transmission, optical signal selective calculation processing, conversion with electric signals, and the like has become an important subject, and research and development thereof have been actively conducted.
ところで、光信号の選択演算処理のための１デバイスと
して、入射するスペクトルを識別、選択するためスペク
トル分析用受光器の出現が望まれ、その実現のための研
究が盛んに行われている。このスペクトル分析用受光器
では、幅広い波長のスペクトルを精度良く識別でき、ま
た選択できることが必要である。By the way, as one device for the selection calculation process of an optical signal, the emergence of a photodetector for spectrum analysis for identifying and selecting an incident spectrum is desired, and research for realizing it is actively conducted. In this spectrum analysis light receiver, it is necessary to be able to accurately identify and select spectra in a wide range of wavelengths.
しかしながら、上記の如き入射するスペクトルを識別、
選択するためスペクトル分析用受光器は、電気的な素子
を使用しないもの等従来も幾つかはあったが、精度、使
用の容易性、装置としてのコンパクト性等で種々の問題
を有し、光信号の処理デバイスとして満足できる素子は
まだ開発されていないのが現状である。However, identifying the incident spectrum as above,
There are several types of optical receivers for spectrum analysis in the past, such as those that do not use electrical elements, but they have various problems in accuracy, ease of use, compactness as a device, etc. At present, no satisfactory element has been developed as a signal processing device.
本発明は、上記の考案に基づくものであって、構造が単
純で、精度良くスペクトルを識別、選択することができ
る量子井戸を用いたスペクトル分析用受光器を提供する
ことを目的とする。The present invention is based on the above invention, and an object of the present invention is to provide a spectrum analysis photodetector using a quantum well, which has a simple structure and is capable of accurately identifying and selecting a spectrum.
そのために本発明は、光が入射する前方をフィルタ層と
し、後方を検出層としたスペクトル分析用受光器におい
て、組成の異なる薄膜により挟み込まれた多層薄膜から
なり特定の波長領域で光の吸収係数が高吸収係数から低
吸収係数に変移する量子井戸を前記フィルタ層と検出層
に用いたことを特徴とするものである。To this end, the present invention is a spectrum analysis photodetector having a filter layer in front of which light is incident and a detection layer in the rear, and is composed of a multilayer thin film sandwiched by thin films having different compositions, and has an absorption coefficient of light in a specific wavelength region. Is used in the filter layer and the detection layer, and a quantum well that changes from a high absorption coefficient to a low absorption coefficient is used.
本発明の量子井戸を用いたスペクトル分析用受光器で
は、量子井戸を積層してフィルタ及び検出器として用い
るので、量子井戸の光吸収特性が印加する電圧に依存す
ることを利用して光吸収特性を変え、所望の波長の除去
や検出を任意に行うことができ、入力スペクトルの識
別、選択を精度良く行うことができる。In the optical receiver for spectrum analysis using the quantum well of the present invention, the quantum wells are stacked and used as a filter and a detector. Therefore, the light absorption characteristics of the quantum wells depend on the applied voltage to utilize the light absorption characteristics. , And desired wavelengths can be removed or detected arbitrarily, and the input spectrum can be identified and selected with high accuracy.
以下、図面を参照しつつ実施例を説明する。 Hereinafter, embodiments will be described with reference to the drawings.
第１図は本発明の量子井戸を用いたスペクトル分析用受
光器の１実施例を説明するための図、第２図は量子井戸
の光吸収特性を示す図、第３図はフィルタと検出器との
組み合わせ構成例を示す図、第４図は検出波長の設定例
を説明するための図である。FIG. 1 is a diagram for explaining one embodiment of a photodetector for spectrum analysis using a quantum well of the present invention, FIG. 2 is a diagram showing optical absorption characteristics of a quantum well, and FIG. 3 is a filter and a detector. FIG. 4 is a diagram showing an example of a combination configuration with FIG. 4, and FIG. 4 is a diagram for explaining an example of setting the detection wavelength.
第１図において、１は第１の多層薄膜、２は第２の多層
薄膜、３は第３の多層膜、４、５、１７と１８は薄膜、
６、７、１４、１５と１６は電極、１１と１２は電源、
１３は抵抗を示す。In FIG. 1, 1 is a first multi-layer thin film, 2 is a second multi-layer thin film, 3 is a third multi-layer film, 4, 5, 17 and 18 are thin films,
6, 7, 14, 15 and 16 are electrodes, 11 and 12 are power supplies,
13 indicates resistance.
量子井戸構造は、或る組成の薄膜がそれと異なる組成の
薄膜により挟み込まれた多重量子井戸である。量子井戸
は、入射光に対する吸収特性が第２図のようになり、或
る波長以下の光に対して高い吸収係数をもつ。この境界
の波長は、例えば量子井戸を構成する薄膜にＧａＡｓ、
これを挟み込む薄膜にＡｌＧａＡｓを使用した場合には
８０００Å程度、またＩｎＧａＡｓに対してＩｎＡｌＡ
ｓを使用した場合には１．５μ（ミクロン）程度にな
り、材料及び膜厚により境界の波長を選ぶことができ
る。また、この境界の波長は、電圧を加えると長波長側
にシフトするという特性を有する。従って、ここに加え
る電圧を制御することによって吸収特性を変えることが
できる。特性の波長、例えば第２図に示すλ２では、高
い吸収係数をもつ状態と低い吸収係数をもつ状態との切
り換えが可能になる。The quantum well structure is a multiple quantum well in which a thin film having a certain composition is sandwiched between thin films having a different composition. The quantum well has absorption characteristics for incident light as shown in FIG. 2, and has a high absorption coefficient for light having a certain wavelength or less. The wavelength of this boundary is, for example, GaAs in the thin film forming the quantum well,
When AlGaAs is used for the thin film sandwiching this, about 8000Å, and InAlA for InGaAs
When s is used, it becomes about 1.5 μ (micron), and the boundary wavelength can be selected depending on the material and the film thickness. Further, the wavelength at this boundary has a characteristic that it shifts to the long wavelength side when a voltage is applied. Therefore, the absorption characteristics can be changed by controlling the voltage applied here. At a characteristic wavelength, for example, λ 2 shown in FIG. 2 , it is possible to switch between a state having a high absorption coefficient and a state having a low absorption coefficient.
本発明に係る量子井戸を用いたスペクトル分析用受光器
は、第１図の構成で示すように原理としてこの多層薄膜
の量子井戸を単位として、複数の多層薄膜１〜３を積層
し、これらの層をフィルタやスペクトル検出器として用
いるものである。As shown in the configuration of FIG. 1, the spectrum analyzing receiver using the quantum well according to the present invention is, as a principle, formed by stacking a plurality of multilayer thin films 1 to 3 with the quantum well of this multilayer thin film as a unit. The layers are used as filters and spectrum detectors.
例えば第２図に示す吸収特性Ｃ１を第１の多層薄膜１
に、吸収特性Ｃ２を第２の多層薄膜２に、吸収特性Ｃ３
を第３の多層薄膜３に与えたとすると、λ１、λ２、λ
３のいずれの波長の光が入力したかを識別する場合、λ
１の波長スペクトルが入力したときには、主として出力
信号ＤＴ１が高出力となり、λ２の波長スペクトルが入
力したときには、主として出力信号ＤＴ２が高出力とな
り、λ３の波長スペクトルが入力したときには、出力信
号ＤＴ３のみが高出力となる。このようにして入力波長
の識別が容易に行える。また、各出力信号ＤＴ１〜ＤＴ
３のそれぞれのレベルを演算処理することによって入力
波長を識別することも可能である。For example, the absorption characteristic C 1 shown in FIG.
The absorption characteristic C 2 to the second multilayer thin film 2 and the absorption characteristic C 3 to
Is given to the third multilayer thin film 3, λ 1 , λ 2 , λ
When identifying which wavelength of light of 3 is input, λ
When the wavelength spectrum of 1 is input, the output signal DT 1 is mainly high output, when the wavelength spectrum of λ 2 is input, the output signal DT 2 is mainly high output, and when the wavelength spectrum of λ 3 is input, it is output. Only the signal DT 3 has a high output. In this way, the input wavelength can be easily identified. In addition, each output signal DT 1 to DT
It is also possible to identify the input wavelength by arithmetically processing each of the three levels.
次に２つの多層薄膜を使った波長識別装置の例を説明す
る。第３図において、２つの多層薄膜のうち、光が入射
する前方の多層薄膜をフィルタ層とし、後方の多層薄膜
を検出層としている。そして、フィルタ層には電源１１
により所定の電圧を印加し、同様に検出層にも電源１２
により所定の電圧を印加する構成としている。これらフ
ィルタ層及び検出層、それぞれの多層薄膜は、先に述べ
たように光の吸収から透過に変移する波長が電圧に依存
するものである。従って、波長λ１を検出する場合には
第４図とがそれぞれフィルタ層と検出層の吸収特性
（実線がフィルタ層の吸収特性、点線が検出層の吸収特
性）になるように印加電圧を制御し、λ２を検出する場
合には第４図とがそれぞれフィルタ層と検出層の吸
収特性になるように印加電圧を制御する。このようにす
ると、設定波長よりも短い波長の光が入力した場合に
は、フィルタ層で吸収され、また、設定波長よりも長い
波長の光が入力した場合には、フィルタ層及び検出層の
いずれの層でも透過され、いずれの場合にも検出層で電
流が検出されない。つまり、設定波長の光が入力した場
合のみ、検出層で入力光が吸収され所定の電流によりこ
れを検出することができる。Next, an example of a wavelength identification device using two multilayer thin films will be described. In FIG. 3, of the two multi-layered thin films, the front multi-layered thin film on which light is incident serves as a filter layer and the rear multi-layered thin film serves as a detection layer. Then, the power source 11 is provided in the filter layer.
A predetermined voltage is applied by the
By this, a predetermined voltage is applied. In the filter layer and the detection layer, and the respective multilayer thin films, the wavelength at which light is changed from absorption to transmission depends on the voltage, as described above. Therefore, when the wavelength λ 1 is detected, the applied voltage is controlled so that the absorption characteristics of the filter layer and the detection layer are as shown in FIG. 4 (solid line indicates absorption characteristics of filter layer, dotted line indicates absorption characteristics of detection layer). However, when detecting λ 2 , the applied voltage is controlled so that the absorption characteristics of the filter layer and the detection layer are as shown in FIG. With this configuration, when light with a wavelength shorter than the set wavelength is input, it is absorbed by the filter layer, and when light with a wavelength longer than the set wavelength is input, either the filter layer or the detection layer is detected. No light is detected on the detection layer in any case. That is, only when the light of the set wavelength is input, the input light is absorbed by the detection layer and can be detected by the predetermined current.
なお、本発明は、種々の変形が可能であり、上記実施例
に限定されるものではない。例えば上記実施例では、第
１図に示すように複数の検出層で構成し、第３図に示す
ようにフィルタ層と検出層との２層で構成したが、これ
らの組み合わせにより複数積層して構成してもよいし、
一方の層のみに量子井戸を用いてもよい。また、検出波
長領域を広くとるように第４図に示す吸収特性の設定に
おいて検出層の吸収特性をフィルタ層の吸収特性より大
幅に長くした領域、例えば第４図においてととの組
み合わせに設定してもよい。さらには、フィルタ層には
電圧を印加せず、入力側より短い波長の検出から順に長
い波長の検出を行うようにフィルタ層と検出層とのペア
を多重に配置してもよいことは勿論のことである。The present invention can be modified in various ways and is not limited to the above-mentioned embodiments. For example, in the above-mentioned embodiment, it is composed of a plurality of detection layers as shown in FIG. 1 and two layers of a filter layer and a detection layer as shown in FIG. You can configure
The quantum well may be used for only one layer. Further, in the absorption characteristic setting shown in FIG. 4, the absorption characteristic of the detection layer is set to be much longer than the absorption characteristic of the filter layer so that the detection wavelength range is widened, for example, in combination with and in FIG. May be. Furthermore, it goes without saying that a pair of the filter layer and the detection layer may be arranged in a multiple manner so that the voltage is not applied to the filter layer and the wavelengths shorter than those on the input side are detected first and then the longer wavelengths are detected. That is.
上記実施例による組成では、ＧａＡｓ系のものを示した
が、他の組成を使ってもよい。吸収開始波長や吸収量
は、この組成の選択、膜厚、膜の数に応じて選択でき
る。In the composition according to the above embodiment, the GaAs-based composition is shown, but other composition may be used. The absorption start wavelength and the absorption amount can be selected according to the selection of the composition, the film thickness, and the number of films.
以上の説明から明らかなように、本発明によれば、多層
薄膜からなる量子井戸を多重に積層することにより任意
の波長の識別、選択を行うことができ、単純な構造によ
り精度の良いスペクトル分析用受光器を提供できる。ま
た、多層薄膜からなる量子井戸の印加電圧を調整するこ
とにより波長を処理対象となる自由に選ぶことができ、
柔軟に光信号の処理に適用できる。さらには、多層薄膜
からなる量子井戸をフィルタ層と検出層とのいずれにも
使用できる。As is clear from the above description, according to the present invention, it is possible to identify and select arbitrary wavelengths by stacking quantum wells composed of multi-layer thin films in multiple layers, and to perform accurate spectrum analysis with a simple structure. It is possible to provide a receiver for use. In addition, the wavelength can be freely selected by adjusting the applied voltage to the quantum well made up of multilayer thin films.
It can be flexibly applied to optical signal processing. Furthermore, a quantum well made of a multilayer thin film can be used for both the filter layer and the detection layer.
第１図は本発明の量子井戸を用いたスペクトル分析用受
光器の１実施例を説明するための図、第２図は量子井戸
の光吸収特性を示す図、第３図はフィルタと検出器との
組み合わせ構成例を示す図、第４図は検出波長の設定例
を説明するための図である。 第１図において、１は第１の多層薄膜、２は第２の多層
薄膜、３は第３の多層膜、４、５、１７と１８は薄膜、
６、７、１４、１５と１６は電極、１１と１２は電源、
１３は抵抗。FIG. 1 is a diagram for explaining one embodiment of a photodetector for spectrum analysis using a quantum well of the present invention, FIG. 2 is a diagram showing optical absorption characteristics of a quantum well, and FIG. 3 is a filter and a detector. FIG. 4 is a diagram showing an example of a combination configuration with FIG. 4, and FIG. 4 is a diagram for explaining an example of setting the detection wavelength. In FIG. 1, 1 is a first multi-layer thin film, 2 is a second multi-layer thin film, 3 is a third multi-layer film, 4, 5, 17 and 18 are thin films,
6, 7, 14, 15 and 16 are electrodes, 11 and 12 are power supplies,
13 is a resistance.
Claims (3)
を検出層としたスペクトル分析用受光器において、組成
の異なる薄膜により挟み込まれた多層薄膜からなり特定
の波長領域で光の吸収係数が高吸収係数から低吸収係数
に変移する量子井戸を前記フィルタ層と検出層に用いた
ことを特徴とする量子井戸を用いたスペクトル分析用受
光器。1. A spectrum analysis photodetector having a filter layer in front of which light is incident and a detection layer in the rear thereof, which comprises a multilayer thin film sandwiched by thin films having different compositions and has an absorption coefficient of light in a specific wavelength region. A spectral analysis light receiver using a quantum well, characterized in that a quantum well changing from a high absorption coefficient to a low absorption coefficient is used in the filter layer and the detection layer.
ずれか一方が多層薄膜からなる量子井戸を複数積層して
構成されていることを特徴とする特許請求の範囲第１項
記載の量子井戸を用いたスペクトル分析用受光器。2. The quantum well according to claim 1, wherein at least one of the filter layer and the detection layer is formed by stacking a plurality of quantum wells each including a multilayer thin film. Optical receiver for spectrum analysis.
る特許請求の範囲第１項記載の量子井戸を用いたスペク
トル分析用受光器。3. A photodetector for spectrum analysis using a quantum well according to claim 1, wherein a voltage is applied to the multilayer thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61188856A JPH0663838B2 (en) | 1986-08-12 | 1986-08-12 | Optical receiver for spectrum analysis using quantum wells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61188856A JPH0663838B2 (en) | 1986-08-12 | 1986-08-12 | Optical receiver for spectrum analysis using quantum wells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6344132A JPS6344132A (en) | 1988-02-25 |
| JPH0663838B2 true JPH0663838B2 (en) | 1994-08-22 |
Family
ID=16231049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61188856A Expired - Lifetime JPH0663838B2 (en) | 1986-08-12 | 1986-08-12 | Optical receiver for spectrum analysis using quantum wells |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0663838B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0452274B1 (en) * | 1990-04-12 | 1995-06-28 | Dainippon Ink And Chemicals, Inc. | Phenylcyclohexyldioxane derivatives having an ether bond for electro-optical displays |
| FR2682477B1 (en) * | 1991-10-11 | 1994-04-15 | Thomson Csf | SPECTROMETER. |
| JPH101450A (en) * | 1996-06-14 | 1998-01-06 | Chisso Corp | Fluorine-substituted alkyl ether compound, liquid crystal compound and liquid crystal display element |
-
1986
- 1986-08-12 JP JP61188856A patent/JPH0663838B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6344132A (en) | 1988-02-25 |
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