JPH0666432B2 - アバランシェ降伏を用いてプログラム可能な半導体メモリ装置とその配列 - Google Patents

アバランシェ降伏を用いてプログラム可能な半導体メモリ装置とその配列

Info

Publication number: JPH0666432B2
Authority: JP; Japan
Prior art keywords: substrate; gate; insulating layer; diffusion region; conductive gate
Prior art date: 1982-03-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP4783283A

Other languages

English (en)

Japanese (ja)

Other versions

JPS58184757A (ja

Inventor

デビツド・ジエイ・マツクエルロイ

Original Assignee

テキサス・インスツルメンツ・インコ−ポレイテツド

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-03-23

Filing date

1983-03-22

Publication date

1994-08-24

1982-03-23 Priority claimed from US06/361,009 external-priority patent/US4507757A/en

1982-03-23 Priority claimed from US06/361,011 external-priority patent/US4491857A/en

1982-03-23 Priority claimed from US06/361,008 external-priority patent/US4507756A/en

1983-03-22 Application filed by テキサス・インスツルメンツ・インコ−ポレイテツド filed Critical テキサス・インスツルメンツ・インコ−ポレイテツド

1983-10-28 Publication of JPS58184757A publication Critical patent/JPS58184757A/ja

1994-08-24 Publication of JPH0666432B2 publication Critical patent/JPH0666432B2/ja

2009-08-24 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

230000015556 catabolic process Effects 0.000 title claims description 22
239000004065 semiconductor Substances 0.000 title description 7
239000000758 substrate Substances 0.000 claims description 28
238000009792 diffusion process Methods 0.000 claims description 18
229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
229920005591 polysilicon Polymers 0.000 description 15
229910052710 silicon Inorganic materials 0.000 description 15
239000010703 silicon Substances 0.000 description 15
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
229910052751 metal Inorganic materials 0.000 description 12
239000002184 metal Substances 0.000 description 11
238000000034 method Methods 0.000 description 11
238000004519 manufacturing process Methods 0.000 description 9
238000010586 diagram Methods 0.000 description 6
150000004767 nitrides Chemical class 0.000 description 6
229920002120 photoresistant polymer Polymers 0.000 description 6
230000000694 effects Effects 0.000 description 5
239000000872 buffer Substances 0.000 description 4
238000005530 etching Methods 0.000 description 4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
239000011248 coating agent Substances 0.000 description 3
238000000576 coating method Methods 0.000 description 3
239000000463 material Substances 0.000 description 3
230000003647 oxidation Effects 0.000 description 3
238000007254 oxidation reaction Methods 0.000 description 3
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
238000003491 array Methods 0.000 description 2
238000000151 deposition Methods 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
239000007943 implant Substances 0.000 description 2
238000002513 implantation Methods 0.000 description 2
238000003698 laser cutting Methods 0.000 description 2
239000011253 protective coating Substances 0.000 description 2
239000010453 quartz Substances 0.000 description 2
230000002829 reductive effect Effects 0.000 description 2
230000002441 reversible effect Effects 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
101100521334 Mus musculus Prom1 gene Proteins 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
229910021529 ammonia Inorganic materials 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
230000007547 defect Effects 0.000 description 1
230000002950 deficient Effects 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000013461 design Methods 0.000 description 1
MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
230000005669 field effect Effects 0.000 description 1
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
230000010355 oscillation Effects 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
230000036961 partial effect Effects 0.000 description 1
238000000059 patterning Methods 0.000 description 1
238000012545 processing Methods 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
238000004904 shortening Methods 0.000 description 1
229910000077 silane Inorganic materials 0.000 description 1
150000003376 silicon Chemical class 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
238000010561 standard procedure Methods 0.000 description 1
239000007858 starting material Substances 0.000 description 1
230000003068 static effect Effects 0.000 description 1
238000006467 substitution reaction Methods 0.000 description 1
238000012360 testing method Methods 0.000 description 1
230000001052 transient effect Effects 0.000 description 1
230000005641 tunneling Effects 0.000 description 1
230000008016 vaporization Effects 0.000 description 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

Semiconductor Memories (AREA)
Read Only Memory (AREA)
Techniques For Improving Reliability Of Storages (AREA)

JP4783283A 1982-03-23 1983-03-22 アバランシェ降伏を用いてプログラム可能な半導体メモリ装置とその配列 Expired - Lifetime JPH0666432B2 (ja)

Applications Claiming Priority (6)

Application Number	Priority Date	Filing Date	Title
US361011		1982-03-23
US06/361,009 US4507757A (en)	1982-03-23	1982-03-23	Avalanche fuse element in programmable memory
US06/361,011 US4491857A (en)	1982-03-23	1982-03-23	Avalanche fuse element with isolated emitter
US361008		1982-03-23
US06/361,008 US4507756A (en)	1982-03-23	1982-03-23	Avalanche fuse element as programmable device
US361009		1982-03-23

Publications (2)

Publication Number	Publication Date
JPS58184757A JPS58184757A (ja)	1983-10-28
JPH0666432B2 true JPH0666432B2 (ja)	1994-08-24

Family

ID=27408492

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP4783283A Expired - Lifetime JPH0666432B2 (ja)	1982-03-23	1983-03-22	アバランシェ降伏を用いてプログラム可能な半導体メモリ装置とその配列

Country Status (2)

Country	Link
EP (1)	EP0089457A3 (fr)
JP (1)	JPH0666432B2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2212978A (en) *	1987-11-30	1989-08-02	Plessey Co Plc	An integrated circuit having a patch array
DE4027834A1 (de) *	1990-09-03	1992-03-05	Heraeus Elektroden	Anordnung zur galvanischen beschichtung
JP3273582B2 (ja) *	1994-05-13	2002-04-08	キヤノン株式会社	記憶装置
US5909049A (en)	1997-02-11	1999-06-01	Actel Corporation	Antifuse programmed PROM cell
WO2005109516A1 (fr)	2004-05-06	2005-11-17	Sidense Corp.	Architecture de reseau de transistors anti-fusibles a canaux partages
US8735297B2 (en)	2004-05-06	2014-05-27	Sidense Corporation	Reverse optical proximity correction method
US7755162B2 (en)	2004-05-06	2010-07-13	Sidense Corp.	Anti-fuse memory cell
US9634015B2 (en) *	2015-08-18	2017-04-25	Ememory Technology Inc.	Antifuse-type one time programming memory cell and array structure with same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5418115B2 (fr) *	1972-03-27	1979-07-05
US3836992A (en) *	1973-03-16	1974-09-17	Ibm	Electrically erasable floating gate fet memory cell
JPS5691466A (en) *	1979-12-25	1981-07-24	Fujitsu Ltd	Selective writing possible semiconductor element
EP0041770A3 (fr) *	1980-05-23	1984-07-11	Texas Instruments Incorporated	Elément de mémoire morte programmable et procédé pour sa fabrication

1983
- 1983-01-21 EP EP83100526A patent/EP0089457A3/fr not_active Withdrawn
- 1983-03-22 JP JP4783283A patent/JPH0666432B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0089457A2 (fr)	1983-09-28
JPS58184757A (ja)	1983-10-28
EP0089457A3 (fr)	1986-01-22

Publication	Publication Date	Title
US4562639A (en)	1986-01-07	Process for making avalanche fuse element with isolated emitter
US4507757A (en)	1985-03-26	Avalanche fuse element in programmable memory
US4507756A (en)	1985-03-26	Avalanche fuse element as programmable device
JP4148995B2 (ja)	2008-09-10	書き込み可能な不揮発性メモリデバイス及びこのデバイスの製造方法
US4281397A (en)	1981-07-28	Virtual ground MOS EPROM or ROM matrix
US5371028A (en)	1994-12-06	Method for making single transistor non-volatile electrically alterable semiconductor memory device
TWI441329B (zh)	2014-06-11	反熔絲記憶格
US4561004A (en)	1985-12-24	High density, electrically erasable, floating gate memory cell
US4984054A (en)	1991-01-08	Electric fuse for a redundancy circuit
US4219836A (en)	1980-08-26	Contact programmable double level polysilicon MOS read only memory
JPH0219980B2 (fr)	1990-05-07
US4573144A (en)	1986-02-25	Common floating gate programmable link
JPS6033315B2 (ja)	1985-08-02	半導体装置
US4294001A (en)	1981-10-13	Method of making implant programmable metal gate MOS read only memory
US4491857A (en)	1985-01-01	Avalanche fuse element with isolated emitter
US4503524A (en)	1985-03-05	Electrically erasable dual-injector floating gate programmable memory device
KR900000586B1 (ko)	1990-01-31	리드 온리 메모리(Read Only Memory)회로
JPH0666432B2 (ja)	1994-08-24	アバランシェ降伏を用いてプログラム可能な半導体メモリ装置とその配列
US4342100A (en)	1982-07-27	Implant programmable metal gate MOS read only memory
KR100231963B1 (ko)	1999-12-01	용장(冗長)회로용 소거불능 eprom 셀
US4342099A (en)	1982-07-27	Electrically erasable programmable MNOS read only memory
JPH0222546B2 (fr)	1990-05-18
US5170227A (en)	1992-12-08	Mask rom having monocrystalline silicon conductors
JP2659283B2 (ja)	1997-09-30	半導体記憶装置の製造方法
JPH05129561A (ja)	1993-05-25	半導体記憶装置