JPH0676731A - Thermoelectric field emission cathode - Google Patents
Thermoelectric field emission cathodeInfo
- Publication number
- JPH0676731A JPH0676731A JP14209993A JP14209993A JPH0676731A JP H0676731 A JPH0676731 A JP H0676731A JP 14209993 A JP14209993 A JP 14209993A JP 14209993 A JP14209993 A JP 14209993A JP H0676731 A JPH0676731 A JP H0676731A
- Authority
- JP
- Japan
- Prior art keywords
- zirconium
- oxygen
- electrode
- tip
- field emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06308—Thermionic sources
- H01J2237/06316—Schottky emission
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、電子顕微鏡、測長機、
電子ビーム露光機、電子ビームテスター等に用いられる
熱電界放射陰極に関する。BACKGROUND OF THE INVENTION The present invention relates to an electron microscope, a length measuring machine,
The present invention relates to a thermoelectric field emission cathode used for an electron beam exposure machine, an electron beam tester and the like.
【0002】[0002]
【従来の技術】近年、より高輝度の電子ビームを得るた
めに、タングステン単結晶の針状電極を利用した熱電界
放射陰極が開発されている。軸方位が<100>方位か
らなるタングステンチップ(以下Wチップという)に、
ジルコニウム及び酸素とからなる被覆層を設けた、いわ
ゆるZrO/W熱電界放射陰極は、ZrO被覆層によっ
て(100)面の仕事関数が選択的に4.5 eVから2.8
eVに低下するので、従来の熱陰極に較べて高輝度、長
寿命であり、また冷電界放射陰極よりも安定で使いやす
いといった特徴を持っている。2. Description of the Related Art In recent years, in order to obtain an electron beam of higher brightness, a thermal field emission cathode utilizing a needle electrode made of a tungsten single crystal has been developed. A tungsten chip (hereinafter referred to as a W chip) whose axis direction is a <100> direction,
A so-called ZrO / W thermal field emission cathode provided with a coating layer made of zirconium and oxygen has a work function of (100) plane selectively from 4.5 eV to 2.8 by the ZrO coating layer.
Since it is reduced to eV, it has higher brightness and longer life than the conventional hot cathode, and is more stable and easier to use than the cold field emission cathode.
【0003】図2に熱電界放射陰極の断面図を示す。1
はWチップ、2は熱電子の放射を抑制する電界を形成す
るための電圧を印加するサプレッサー電極、3はWチッ
プを加熱する加熱ヒーターとなるタングステンワイヤ
ー、4は絶縁碍子である。5は金属支柱、また、図1は
図2のWチップ1とタングステンワイヤー3の部分を拡
大した図で、Wチップの一部にはジルコニウム及び酸素
の供給源6が設けられている。図示していないがWチッ
プの表面はZrO被覆層で覆われている。FIG. 2 shows a sectional view of a thermal field emission cathode. 1
Is a W chip, 2 is a suppressor electrode for applying a voltage for forming an electric field for suppressing the emission of thermoelectrons, 3 is a tungsten wire serving as a heater for heating the W chip, and 4 is an insulator. Reference numeral 5 is a metal column, and FIG. 1 is an enlarged view of the portion of the W tip 1 and the tungsten wire 3 of FIG. 2. A zirconium and oxygen supply source 6 is provided in a part of the W tip. Although not shown, the surface of the W chip is covered with a ZrO coating layer.
【0004】このようなZrO/W熱電界放射陰極のW
チップ1はタングステンワイヤー3に通電加熱し180
0度K程度の温度下で使用されるため蒸発により消耗す
るが、ジルコニウム及び酸素の供給源6よりジルコニウ
ム及び酸素が表面拡散を通じWチップ1の表面に連続し
て供給されZrO被覆層が形成され続ける。ジルコニウ
ム及び酸素の供給源6中のジルコニウム或いは酸素が枯
渇し終わればZrO被覆層の形成は終了し仕事関数が上
昇し、熱電界放射陰極としての機能を失い寿命を終え
る。W of such a ZrO / W thermal field emission cathode
The tip 1 is heated to 180 by energizing the tungsten wire 3.
Since it is used at a temperature of about 0 degrees K, it is consumed by evaporation, but zirconium and oxygen are continuously supplied from the zirconium and oxygen supply source 6 to the surface of the W chip 1 through surface diffusion to form a ZrO coating layer. to continue. When the zirconium or oxygen in the zirconium and oxygen source 6 is completely depleted, the formation of the ZrO coating layer is completed, the work function is increased, the function as a thermal field emission cathode is lost, and the life ends.
【0005】低仕事関数化のためのZrO被覆層の形成
方法の従来法を以下に示す(米国特許第4,324,999 号公
報)。 第1工程:ジルコニウム含有物の前駆体として水素化ジ
ルコニウム(ZrH2)の粉末体に有機溶剤などを添加
しスラリー状にし、<100>方位のWチップ1に付着
させ水素化ジルコニウムの溜まりを形成する。 第2工程:高真空下で、Wチップ1の加熱を行って、水
素化ジルコニウムをジルコニウムと水素に分解し、ジル
コニウムをWチップ1に拡散させる。 第3工程:10-6Torr程度の酸素雰囲気中にてWチップ1
を加熱し、Wチップ1上に、ZrO被覆層を形成させ
る。同時にジルコニウムの全量、或いは一部が酸化ジル
コニウムになりジルコニウムと酸素の供給源が形成され
る(以下、本工程を酸素処理という)。A conventional method for forming a ZrO coating layer for lowering the work function is shown below (US Pat. No. 4,324,999). First step: Zirconium hydride (ZrH 2 ) powder as a precursor of a zirconium-containing powder is added with an organic solvent or the like to form a slurry, and the slurry is adhered to a W chip 1 having a <100> orientation to form a zirconium hydride pool. To do. Second step: The W chip 1 is heated under high vacuum to decompose zirconium hydride into zirconium and hydrogen, and diffuse zirconium into the W chip 1. Third step: W chip 1 in an oxygen atmosphere of about 10 -6 Torr
Is heated to form a ZrO coating layer on the W chip 1. At the same time, the whole amount or part of zirconium becomes zirconium oxide and a supply source of zirconium and oxygen is formed (hereinafter, this step is referred to as oxygen treatment).
【0006】[0006]
【発明が解決しようとする課題】しかしながら、従来法
によりZrO/W熱電界放射陰極を製造する時、いくつ
かの問題があった。従来法によりZrO/W熱電界放射
陰極を製造する時の第1の問題は、その寿命のばらつき
が大きく、また、タングステンワイヤー3の溶断、或い
は、放電によるWチップ1の損傷といった故障の発生率
が高く、電子ビームの不安定な挙動がしばしば観察され
るという問題があった。 例えば、ジルコニウム及び酸
素の供給源7をWチップ1の加熱ヒーター側近くに設け
れば温度が高くなりジルコニウム及び酸素の蒸発速度が
速くなり寿命が短くなる。 ことに、酸素処理が不十分
で未酸化のジルコニウムの量が多い場合にはジルコニウ
ムの蒸気圧は酸化ジルコニウムの蒸気圧に較べ1800度K
で約50倍高いためこの効果は顕著である。 また、Wチ
ップ1とタングステンワイヤー3の接合点上に、あるい
はタングステンワイヤー上にジルコニウム及び酸素の供
給源6を設けると加熱特性が変化し、加熱電流がより多
く必要になり、甚だ著しい場合にはタングステンワイヤ
ー3が溶断する時もある。However, there are some problems in manufacturing a ZrO / W thermal field emission cathode by the conventional method. The first problem in manufacturing the ZrO / W thermal field emission cathode by the conventional method is that the lifespan thereof varies widely, and the rate of occurrence of failures such as melting of the tungsten wire 3 or damage of the W chip 1 due to discharge. However, unstable behavior of the electron beam is often observed. For example, if the supply source 7 of zirconium and oxygen is provided near the heater side of the W chip 1, the temperature becomes higher, the evaporation rate of zirconium and oxygen becomes faster, and the life becomes shorter. Especially, when the oxygen treatment is insufficient and the amount of unoxidized zirconium is large, the vapor pressure of zirconium is 1800 degrees K compared to the vapor pressure of zirconium oxide.
This effect is remarkable because it is about 50 times higher. Further, when the zirconium and oxygen supply source 6 is provided on the junction between the W chip 1 and the tungsten wire 3 or on the tungsten wire, the heating characteristics change, and a larger heating current is required. There are times when the tungsten wire 3 melts.
【0007】一方ジルコニウム及び酸素の供給源6をW
チップ1の先端側近くに設ければ温度が低く蒸発速度が
遅く寿命の点では好ましいが、Wチップ1先端及びサプ
レッサー電極2の孔の近傍の電界分布を乱し放電を生じ
たり、或いは電子ビームが不安定になるなど電子放射陰
極として性能を著しく低下させるという問題があった
が、これらに関する検討はなされていなかった。On the other hand, the zirconium and oxygen supply source 6 is W
It is preferable if it is provided near the tip side of the tip 1 in terms of low temperature and low evaporation rate and long life, but it may disturb the electric field distribution in the vicinity of the tip of the W tip 1 and the hole of the suppressor electrode 2 to cause discharge, or to generate an electron beam. However, there has been a problem that the performance of the electron emission cathode is remarkably deteriorated due to instability, but no studies have been made on these.
【0008】又、第2の問題は、製造の過程に於いてジ
ルコニウム及び酸素の供給源がWチップより剥がれ落ち
てしまい製品が得られなかったり、製品が得られても使
用中に剥がれが生じて熱電界放射陰極の機能を失う等の
不都合を生じることがあった。The second problem is that the zirconium and oxygen supply sources are peeled off from the W chip during the manufacturing process, and the product cannot be obtained, or even if the product is obtained, peeling occurs during use. As a result, inconveniences such as loss of the function of the thermal field emission cathode may occur.
【0009】第3の問題は、所望の電子ビーム特性が得
られないという問題である。第3図は、熱電界放射陰極
が使用される際の電気回路の模式図である。熱電界放射
陰極は、空間的に広がりのある電子ビームを発生する
が、電子顕微鏡等の最終用途では軸中心部の電子ビーム
Ip7が主に使用される。 この部分の電子ビーム量を確
保する為には、熱電界放射陰極の温度や引き出し電圧Ve
x 8を調整する。しかし、引き出し電圧の増加は、軸中
心部の電子ビームIp7を増加させると共に、周辺部の電
子ビーム量をも増加させる。 従って、軸中心部の電子
ビームIp7と周辺部の電子ビームの和である全電子ビー
ムIt9をも増加させる。 全電子ビーム量が必要以上に
大きい場合には、熱電界放射陰極を稼働させるために大
型の電源が必要となり、経済的に不利となる。 既に設
計製作されている熱電界放射陰極使用装置については、
軸中心部の電子ビーム量Ip7に対して周辺部の電子ビー
ム量が大きな特性を持つ熱電界放射陰極は使えないとい
う問題があった。更に、全電子ビーム量It9が大きい場
合には、電子ビームボンバード効果によって電極部材か
らのガス放出量が増大するので、電子ビームが時間的、
空間的に不安定となりやすい。 所望の軸中央部電子ビ
ーム量が得られる限り周辺部の電子ビーム量従って全電
子ビーム量は小さいほうが望ましい。The third problem is that desired electron beam characteristics cannot be obtained. FIG. 3 is a schematic diagram of an electric circuit when a thermal field emission cathode is used. The thermal field emission cathode generates an electron beam with a spatial spread, but in the final application such as an electron microscope, the electron beam at the center of the axis is used.
Ip7 is mainly used. In order to secure the electron beam amount in this part, the temperature of the thermal field emission cathode and the extraction voltage Ve
Adjust x8. However, the increase of the extraction voltage increases the electron beam Ip7 in the central portion of the shaft and also increases the electron beam amount in the peripheral portion. Therefore, the total electron beam It9, which is the sum of the electron beam Ip7 at the center of the axis and the electron beam at the peripheral portion, is also increased. When the total electron beam amount is larger than necessary, a large power source is required to operate the thermal field emission cathode, which is economically disadvantageous. For devices that use the thermal field emission cathode that have already been designed and manufactured,
There is a problem that a thermal field emission cathode having a large electron beam amount in the peripheral portion with respect to the electron beam amount Ip7 in the axial center portion cannot be used. Further, when the total electron beam amount It9 is large, the amount of gas released from the electrode member increases due to the electron beam bombardment effect, so that the electron beam is
It tends to be spatially unstable. As long as a desired electron beam amount in the central portion of the shaft is obtained, it is desirable that the electron beam amount in the peripheral portion, that is, the total electron beam amount is small.
【0010】本発明はかかる問題点に鑑みてなされたも
のであり、安定して長寿命且つ、低故障率で安定した電
子ビーム特性を有する熱電界放射陰極を提供することを
目的としている。The present invention has been made in view of the above problems, and an object of the present invention is to provide a thermal field emission cathode having a stable long life, a low failure rate and stable electron beam characteristics.
【0011】[0011]
【課題を解決するための手段】本発明の特徴は、軸方位
が<100>方位からなるタングステン単結晶の針状電
極に、ジルコニウム及び酸素とからなる被覆層とその供
給源を設けた針状電極とサプレッサー電極とからなる熱
電界放射陰極に於いて、ジルコニウム及び酸素の供給源
が前記針状電極と加熱ヒーターとの接合点から前記針状
電極の先端方向200 μmの点とサプレッサー電極の外表
面との間に位置することにあり、また、前記供給源中の
ジルコニウム重量を3.0x10-6g 以上10x10 -6g 以下にす
ることである。 ここでジルコニウム量を定めるために
は、予めの実験でジルコニウム及び酸素の供給源の前駆
体の塗布量を変化させて得た熱電界放射陰極のWチップ
部分を元素分析することで、塗布量とジルコニウム量と
の関係を得ておけば熱電界放射陰極を破壊することな
く、ジルコニウム量を所望の値にすることができる。A feature of the present invention is that a needle-shaped electrode made of a tungsten single crystal having an axis orientation of <100> is provided with a coating layer of zirconium and oxygen and a supply source thereof. In a thermoelectric field emission cathode comprising an electrode and a suppressor electrode, a source of zirconium and oxygen is located at a point 200 μm from the junction of the needle electrode and a heater and outside the suppressor electrode. It is located between the surface and the surface, and the weight of zirconium in the source is 3.0x10 -6 g or more and 10x10 -6 g or less. Here, in order to determine the amount of zirconium, the W tip portion of the thermal field emission cathode obtained by changing the amount of zirconium and the precursor of the oxygen supply source in an experiment in advance was subjected to elemental analysis to determine the amount of zirconium. If the relationship with the amount of zirconium is obtained, the amount of zirconium can be set to a desired value without destroying the thermoelectric field emission cathode.
【0012】本発明の他の特徴は、軸方位が<100>
方位からなるタングステン単結晶の針状電極に、ジルコ
ニウム及び酸素とからなる被覆層とその供給源を設けた
針状電極とサプレッサー電極とからなる熱電界放射陰極
に於いて、針状電極の先端から10μmと200 μmまでの
間の領域での円錐形状の輪郭が直線または内側に湾曲し
た弧状であることにある。詳しくは、針状電極の先端か
ら10μmまでの領域での円錐角が10度以上25度以下であ
ること、又、針状電極の先端から200 μmまでの領域で
の円錐角が10度以上35度以下であることにある。Another feature of the present invention is that the axis direction is <100>.
In a thermoelectric field emission cathode composed of a needle-shaped electrode of a tungsten single crystal composed of azimuth, a needle-shaped electrode provided with a coating layer of zirconium and oxygen and a supply source thereof and a suppressor electrode, from the tip of the needle-shaped electrode. The conical contour in the region between 10 and 200 μm lies in a straight line or an inwardly curved arc. Specifically, the cone angle in the region from the tip of the needle electrode to 10 μm is 10 degrees or more and 25 degrees or less, and the cone angle in the region from the tip of the needle electrode to 200 μm is 10 degrees or more 35 It is below the degree.
【0013】更に、本発明のもう一つの特徴は、軸方位
が<100>方位からなるタングステン単結晶の針状電
極に、ジルコニウム及び酸素とからなる被覆層とその供
給源を設けた針状電極とサプレッサー電極とからなる熱
電界放射陰極に於いて、ジルコニウム及び酸素の供給源
とタングステン針状電極との反応が存在しないか、若し
くは反応層の厚みが15μm以下であることにある。詳し
くは、タングステン単結晶の針状電極にジルコニウムと
酸素の被覆層を形成する過程において、1x10-7Torr以上
の酸素分圧を持つ真空中で輝度温度1200℃以上1500℃以
下の温度で加熱処理を施したこと、ジルコニウム及び酸
素の供給源として酸化ジルコニウムを含む前駆体を用い
ること、及びタングステン単結晶の針状電極にジルコニ
ウムと酸素の被覆層を形成する過程において、ZrW2
とZrの共晶温度よりも低い温度でジルコニウムを酸化
させることにある。Another feature of the present invention is that a needle-shaped electrode made of a tungsten single crystal having an axial orientation of <100> is provided with a coating layer of zirconium and oxygen and a supply source thereof. In the thermoelectric field emission cathode composed of the suppressor electrode and the suppressor electrode, there is no reaction between the source of zirconium and oxygen and the tungsten needle electrode, or the thickness of the reaction layer is 15 μm or less. Specifically, in the process of forming a coating layer of zirconium and oxygen on a needle electrode of tungsten single crystal, heat treatment is performed in a vacuum with an oxygen partial pressure of 1x10 -7 Torr or more at a brightness temperature of 1200 ° C to 1500 ° C. In the process of applying a precursor containing zirconium oxide and zirconium oxide as a source of zirconium and oxygen, and forming a coating layer of zirconium and oxygen on a needle electrode of a tungsten single crystal, ZrW 2
And to oxidize zirconium at a temperature lower than the eutectic temperature of Zr.
【0014】[0014]
【作用】ZrO/W熱電界放射陰極の寿命を律する一因
としてジルコニウム及び酸素供給源中のジルコニウム或
いは酸素の枯渇が挙げられる。蒸発による消耗速度は温
度に強く依存している。更に、ジルコニウム及び酸素の
供給源の針状電極における位置は電界分布や加熱特性に
影響するので、ジルコニウム及び酸素供給源の位置には
両者の効果を考慮したうえでの最適位置が存在する。
本発明者等は、この点に付いて検討した結果、wチップ
1の加熱ヒーターへの接合点からwチップの先端方向20
0 μmの点とサプレッサー電極の外表面との間(図1中
のB;両端を含む)の位置がジルコニウム及び酸素供給
源6を設ける位置の最適範囲であることが明かとなっ
た。 ジルコニウム及び酸素の供給源中のジルコニウム
或いは酸素が枯渇にいたる時間であるが、その消耗の機
構は不明な点も多く明かではないが、最短でも5000時間
前後の寿命が確保されることが確かめられているが、3.
0x10-6g 未満ではその寿命が短く、目的とするものが得
られない。10x10 -6g を越えた場合、一つには、熱電界
放射陰極の寿命を支配する因子がジルコニウム或いは酸
素の枯渇以外の因子、例えば、加熱ヒーターの消耗等、
が支配的となるので、寿命の面で顕著な効果が期待でき
ないし、熱電界放射陰極を製造するに際してWチップに
安定して塗布することが困難になってくる。The depletion of zirconium and / or zirconium or oxygen in the oxygen source is one of the factors that control the life of the ZrO / W thermal field emission cathode. The consumption rate due to evaporation is strongly dependent on temperature. Furthermore, since the position of the zirconium and oxygen supply source in the needle electrode affects the electric field distribution and heating characteristics, the zirconium and oxygen supply source has an optimum position in consideration of the effects of both.
The present inventors have examined this point, and as a result, from the junction of the w-tip 1 to the heater, the tip direction of the w-tip 20
It was revealed that the position between the point of 0 μm and the outer surface of the suppressor electrode (B in FIG. 1, including both ends) is the optimum range of the position where zirconium and the oxygen supply source 6 are provided. It is the time to reach the depletion of zirconium or oxygen in the source of zirconium and oxygen, but it is not clear that the mechanism of the exhaustion is unclear, but it has been confirmed that a life of around 5000 hours can be secured at the minimum. However, 3.
If it is less than 0x10 -6 g, its life is too short to obtain the intended product. If it exceeds 10x10 -6 g, one of the factors that governs the life of the thermal field emission cathode is a factor other than depletion of zirconium or oxygen, such as exhaustion of the heater.
Therefore, it is difficult to expect a significant effect in terms of life, and it becomes difficult to stably apply the W field tip to the W-chip when manufacturing the thermal field emission cathode.
【0015】ジルコニウム及び酸素の供給源の剥がれ落
ちる現象について、本発明者等は検討を進めたところ、
ジルコニウム及び酸素の供給源が針状電極を構成するW
チップと反応しその反応層が15μmを越える時に前記現
象が生じることを実験的に見いだした。 この理由は明
確でないが、酸素処理工程における加熱により、ジルコ
ニウム及び酸素の供給源中のジルコニウムはWチップと
反応し、その反応層やW自体の表面を通じてWチップ先
端に拡散してゆくと考えられる。 図4は、反応層が存
在する時のWチップ1のジルコニウム及び酸素の供給源
6との接触部のWチップの断面の模式図である。 接触
部に層状の反応生成物が認められ、この生成物は元素分
析によりZrW2 とZrで構成されていることが判っ
た。 この反応層10が存在する場合、その反応生成物
はZrW2 とZrを含む為に、W自体よりも低融点とな
る。 従って、反応層10が厚くなると、ジルコニウム
及び酸素の供給源の重量を支え切れず、該ジルコニウム
及び酸素の供給源の脱落を生じることになる。The present inventors have studied the phenomenon of the zirconium and oxygen sources coming off,
The source of zirconium and oxygen constitutes the needle electrode W
It has been experimentally found that the above phenomenon occurs when the reaction layer with the chip exceeds 15 μm. The reason for this is not clear, but it is considered that zirconium in the oxygen treatment step and zirconium in the oxygen source react with the W tip and diffuse to the tip of the W tip through the reaction layer and the surface of W itself. . FIG. 4 is a schematic view of a cross section of the W tip at the contact portion of the W tip 1 with the zirconium and oxygen supply source 6 when the reaction layer is present. A layered reaction product was observed at the contact portion, and it was found by elemental analysis that this product was composed of ZrW 2 and Zr. When this reaction layer 10 exists, its reaction product has a lower melting point than W itself because it contains ZrW 2 and Zr. Therefore, if the reaction layer 10 becomes thicker, the weight of the zirconium and oxygen sources cannot be supported, and the zirconium and oxygen sources will drop out.
【0016】これを防止するには、ZrW2 とZrの共
晶温度(約1660℃)よりも低い温度で酸素処理、即ちジ
ルコニウムを酸化させればよい。 又、他の防止策とし
ては、酸素処理における条件を1x10-7Torr以上の酸素分
圧をもつ真空中で、輝度温度1200℃以上1500℃以下の温
度に限定すれば良い。 更に、予め酸化ジルコニウムを
含む前駆体を含んだジルコニウム及び酸素供給源を用い
れば良い。 酸素分圧が1x10-7Torr未満では低仕事関数
化に要する時間が長期に渡るので得策でない。温度につ
いては、輝度温度1200℃未満では低仕事関数化に時間を
要するので好ましくないし、輝度温度1500℃を越えると
ZrW2 とZrの共晶温度を越えることになるので反応
層の形成が急速に進み反応層が厚くなりジルコニウム及
び酸素の供給源がWチップより剥がれ易くなる。To prevent this, oxygen treatment, that is, zirconium is oxidized at a temperature lower than the eutectic temperature of ZrW 2 and Zr (about 1660 ° C.). As another preventive measure, the conditions for oxygen treatment may be limited to a brightness temperature of 1200 ° C. or more and 1500 ° C. or less in a vacuum having an oxygen partial pressure of 1 × 10 −7 Torr or more. Furthermore, a zirconium and oxygen supply source containing a precursor containing zirconium oxide in advance may be used. If the oxygen partial pressure is less than 1x10 -7 Torr, it takes a long time to reduce the work function, which is not a good idea. Regarding the temperature, if the brightness temperature is less than 1200 ° C., it takes time to lower the work function, which is not preferable. If the brightness temperature exceeds 1500 ° C., the eutectic temperature of ZrW 2 and Zr is exceeded, so that the reaction layer is rapidly formed. The progressing reaction layer becomes thicker, and the supply sources of zirconium and oxygen are more easily peeled off than the W chip.
【0017】次に、軸中心部の電子ビーム量に対して周
辺部の電子ビーム量が小さい特性を持つ熱電界放射陰極
が容易に得られないという問題についても、本発明者等
が詳細に検討した結果、Wチップ1の円錐部の形状がそ
の電子ビーム量の空間的な分布を支配していることが明
かとなった。 特に、Wチップの円錐部の形状が、その
先端から10μmと200 μmまでの領域で直線または内側
に湾曲した弧状の形状を有する時に全電子ビーム量は先
端曲率半径にほとんど依存せず、前記問題の解決策とな
ることを見いだしたものである。 これは、周辺部の電
子ビームが円錐部より熱電解放射されている為と推定す
る。 Wチップの円錐部形状については、先端から10μ
mまでの領域での円錐角は、10度以上25度以下が望まし
い。 10度未満のものは、その製作が困難な上に、長期
使用に際して先端形状が変形し易く、電子ビームの長期
安定性に欠けるので好ましくない。 又、25度を越える
ものは、全電子ビーム量が大きくなり、実用上価値がな
い。 Wチップの円錐部形状について、加えて、先端か
ら200 μmまでの領域での円錐角はが10度以上35度以下
が良い。 数値制限を理由は、前述のように、10度未満
では製作上困難さが増大することと長期の寿命が達成で
きないこと、35度を越える場合は全電子ビーム量が大き
く実用上の価値がないためである。Next, the present inventors have made a detailed study on the problem that a thermal field emission cathode having a characteristic that the electron beam amount in the peripheral portion is smaller than the electron beam amount in the axial center portion cannot be easily obtained. As a result, it was revealed that the shape of the conical portion of the W tip 1 controls the spatial distribution of the electron beam amount. In particular, when the shape of the conical portion of the W tip has a linear or arcuate shape curved inward in the region from the tip to 10 μm and 200 μm, the total electron beam amount hardly depends on the radius of curvature of the tip, and It has been found to be a solution of. This is presumed to be because the electron beam in the peripheral portion is thermoelectrolytically radiated from the conical portion. Regarding the shape of the conical part of the W tip, 10μ from the tip
The cone angle in the region up to m is preferably 10 degrees or more and 25 degrees or less. If the angle is less than 10 degrees, it is difficult to manufacture, the tip shape is easily deformed during long-term use, and the electron beam lacks long-term stability, which is not preferable. On the other hand, if the angle exceeds 25 degrees, the total electron beam amount becomes large, so that it has no practical value. Regarding the shape of the conical portion of the W tip, in addition, the cone angle in the region from the tip to 200 μm is preferably 10 degrees or more and 35 degrees or less. As mentioned above, the reason for the numerical limitation is that if it is less than 10 degrees, manufacturing difficulty increases and long-term life cannot be achieved, and if it exceeds 35 degrees, the total electron beam amount is large and has no practical value. This is because.
【0018】[0018]
【実施例及び比較例】以下、本発明の実施例について図
を用いて具体的に説明する。図1に示すように、長さ1.
2 mmの<100>方位のタングステン単結晶をタング
ステンワイヤーの加熱ヒーターに溶接し、タングステン
単結晶の先端を電解研磨法により先端曲率半径が0.3 〜
0.5 μmのWチップ1を形成する。 電解研磨方法とし
て、図5に示すように、ステンレス製のリング電極11
をカソードにWチップ1をアノードとして、電解液にN
aOHをもちいて、直流電圧6Vを印加しながらWチッ
プ1先端を電解液中に浸すことで行った。 この時、W
チップ1の上下動を調整して、Wチップ1の円錐部の形
状が異なったものを用意した。EXAMPLES AND COMPARATIVE EXAMPLES Examples of the present invention will be specifically described below with reference to the drawings. As shown in Figure 1, length 1.
2 mm of <100> orientation tungsten single crystal is welded to the heater of tungsten wire and the tip radius of tungsten single crystal is 0.3 ~ by electrolytic polishing.
A 0.5 μm W chip 1 is formed. As an electrolytic polishing method, as shown in FIG. 5, a stainless steel ring electrode 11 is used.
The cathode as the W chip 1 as the anode and the electrolyte as N
It was performed by using aOH and immersing the tip of the W chip 1 in an electrolytic solution while applying a DC voltage of 6V. At this time, W
The vertical movement of the tip 1 was adjusted to prepare W tips 1 having different conical shapes.
【0019】次に、粒度0.5 μm〜5 μmの粉末水素化
ジルコニウムを酢酸イソアミルでスラリー状にしたジル
コニウム及び酸素の供給源の前駆体を刷毛にて塗布し
た。一部では、酸化ジルコニウム中のジルコニウムがモ
ル分率で50%となるように水素化ジルコニウムに添加し
たものも用意した。 前記前駆体の塗布位置に付いて
は、以下に示すWチップ1とタングステンワイヤー3の
溶接点から先端方向のA、B、Cの位置とした。 通
常、針状電極の先端までの長さは1000〜1500μm程度で
あり、Bの距離は900 μm程度である。Next, a zirconium hydride powder having a particle size of 0.5 μm to 5 μm was slurried with isoamyl acetate, and a precursor of a source of zirconium and oxygen was applied with a brush. In some cases, zirconium oxide was also added to zirconium hydride so that the zirconium content in zirconium oxide was 50%. Regarding the coating position of the precursor, the positions A, B, and C in the tip direction from the welding point of the W tip 1 and the tungsten wire 3 shown below were set. Usually, the length to the tip of the needle-shaped electrode is about 1000 to 1500 μm, and the distance B is about 900 μm.
【0020】A:Wチップ1とタングステンワイヤー3
の溶接点からWチップ1の先端方向に200 μmまでの範
囲(両端部は含まない)。 B:Wチップ1とタングステンワイヤー3の溶接点から
Wチップ1の先端方向に200 μmの位置からサプレッサ
ー電極2の外表面までの範囲(両端部を含む、但しジル
コニウム及び酸素供給サー電極の外表面から外側には突
出しない範囲)。 C:サプレッサー電極2の外表面から外側に突出する範
囲。A: W tip 1 and tungsten wire 3
From the welding point of up to 200 μm in the direction of the tip of the W tip 1 (both ends are not included). B: Range from the welding point of the W tip 1 and the tungsten wire 3 to the outer surface of the suppressor electrode 2 from the position of 200 μm in the tip direction of the W tip 1 (including both ends, but the outer surface of the zirconium and oxygen supplying surface electrode) Range that does not project outside). C: Range protruding outward from the outer surface of the suppressor electrode 2.
【0021】塗布した領域(ジルコニウム及び酸素の供
給源6)はWチップ1の長手方向に約300 μmである。
酢酸イソアミルを完全に蒸発させた後、サプレッサー
電極2を取り付け、Wチップの先端がサプレッサー電極
2の表面から300 μm突出するように調節した。 しか
るのち、1x10-9から1x10-10Torr に真空排気し通電加熱
して輝度温度1200〜1550℃で水素化ジルコニウムを水素
とジルコニウムに分解し、ジルコニウムをWチップ表面
に拡散させた。 次に、酸素を導入し9x10-8〜1x10-5To
rrの酸素分圧下で20時間保持して酸素処理を行った。以
上の熱電界放射陰極の製作に於いて、ジルコニウム及び
酸素供給源の前駆体の種類とジルコニウム重量、その塗
布する位置、酸素処理条件、電解研磨条件の異なる合計
27種類の熱電界放射陰極を製作し、その特性を比較し
た。 作製した27種類の熱電界放射陰極を1.0X10-10T
orr の真空下で輝度温度1400℃に加熱して、4kV の電圧
を印加し、電子ビーム特性を比較、評価した。又、先端
部の形状をSEM観察し、一部については、ジルコニウ
ム及び酸素の供給源とWチップの接合部を切断しその面
を観察した。 以上の結果を表1及び表2に示す。The applied area (source 6 of zirconium and oxygen) is about 300 μm in the longitudinal direction of the W tip 1.
After the isoamyl acetate was completely evaporated, the suppressor electrode 2 was attached, and the tip of the W tip was adjusted so as to protrude from the surface of the suppressor electrode 2 by 300 μm. After that, zirconium hydride was decomposed into hydrogen and zirconium at a brightness temperature of 1200 to 1550 ° C. by evacuating from 1 × 10 −9 to 1 × 10 −10 Torr and electrically heating to diffuse zirconium on the W chip surface. Next, oxygen is introduced and 9x10 -8 to 1x10 -5 To
Oxygen treatment was carried out by maintaining the oxygen partial pressure of rr for 20 hours. In the production of the above-mentioned thermal field emission cathodes, a total of 27 types of thermal field emission cathodes having different types of zirconium and oxygen source precursors, zirconium weight, coating position, oxygen treatment conditions, and electropolishing conditions were produced. Then, the characteristics were compared. The prepared 27 kinds of thermal field emission cathodes are 1.0X10 -10 T
It was heated to a brightness temperature of 1400 ° C under a vacuum of orr and a voltage of 4 kV was applied, and electron beam characteristics were compared and evaluated. In addition, the shape of the tip was observed by SEM, and for a part, the joint between the supply source of zirconium and oxygen and the W chip was cut and the surface thereof was observed. The above results are shown in Tables 1 and 2.
【0022】[0022]
【表1】 [Table 1]
【0023】[0023]
【表2】 [Table 2]
【0024】以上から、ジルコニウム及び酸素供給源
が、Wチップと加熱ヒーターとの接合点からWチップの
先端方向に200 μmの位置からサプレッサー電極の外表
面までの範囲(B)に位置する熱電界放射陰極は放電の
無い安定な動作を維持することができ、特に、ジルコニ
ウム及び酸素供給源中のジルコニウム重量を3.0x10-6g
以上10x10 -6g 以下にすることにより7000時間以上の長
寿命が得られた。From the above, the thermal electric field in which the zirconium and oxygen sources are located in the range (B) from the junction of the W tip and the heater to the outer surface of the suppressor electrode at a position of 200 μm in the tip direction of the W tip. The emitting cathode can maintain stable operation without discharge, especially the weight of zirconium and zirconium in the oxygen source is 3.0x10 -6 g.
By adjusting the amount to 10x10 -6 g or less, a long life of 7,000 hours or more was obtained.
【0025】加えて、針状電極の先端から10μmから20
0 μmまでの領域での円錐部形状の輪郭が直線または内
側に湾曲した弧状である時に、全電子ビーム量が先端曲
率半径に大きく影響されないので、先端曲率半径の小さ
い時にも電源を大きくする必要がないこと。 又、ジル
コニウム及び酸素の供給源とタングステン針状電極との
反応が存在しないか、若しくは反応層の厚みが15μm以
下の時に、ジルコニウム及び酸素の供給源が剥がれ落ち
熱電界放射陰極が得にくいという問題が生じないことが
明かである。In addition, from the tip of the needle electrode to 10 μm to 20
When the contour of the conical portion in the region up to 0 μm is a straight line or an arc shape curved inward, the total electron beam amount is not greatly affected by the tip curvature radius, so it is necessary to increase the power supply even when the tip curvature radius is small. There is no. Further, when there is no reaction between the zirconium and oxygen supply source and the tungsten needle electrode, or when the reaction layer has a thickness of 15 μm or less, the zirconium and oxygen supply source is peeled off, and it is difficult to obtain a thermal field emission cathode. It is clear that no problem occurs.
【0026】[0026]
【発明の効果】本発明の熱電界放射陰極は、針状電極の
ジルコニウム及び酸素の供給源が適正な位置に設けられ
ているので、放電現象などの無い、安定な電子ビーム特
性が得られ、寿命が長く、電子顕微鏡や電子ビーム露光
装置などの熱電界放射陰極として利用効果が大きい。In the thermoelectric field emission cathode of the present invention, since the zirconium and oxygen supply sources of the needle-shaped electrode are provided at appropriate positions, stable electron beam characteristics without a discharge phenomenon can be obtained. It has a long life and is highly useful as a thermal field emission cathode for electron microscopes, electron beam exposure apparatuses, etc.
【図1】本発明の熱電界放射陰極の針状電極とサプレッ
サー電極の構造を示す拡大図である。FIG. 1 is an enlarged view showing a structure of a needle electrode and a suppressor electrode of a thermal field emission cathode of the present invention.
【図2】熱電界放射陰極の断面図である。FIG. 2 is a sectional view of a thermal field emission cathode.
【図3】熱電界放射陰極が使用される時の電気回路図で
ある。FIG. 3 is an electrical circuit diagram when a thermal field emission cathode is used.
【図4】ジルコニウム及び酸素の供給源が付着した部分
のWチップの断面を拡大した時の模式図である。FIG. 4 is a schematic view showing an enlarged cross section of a W chip at a portion where zirconium and oxygen supply sources are attached.
【図5】Wチップの先端部を電解研磨する方法を示す模
式図である。FIG. 5 is a schematic view showing a method of electrolytically polishing the tip portion of a W tip.
1:タングステンチップ(Wチップ) 2:サプレッサー電極 3:タングステンワイヤー 4:絶縁碍子 5:金属支柱 6:ジルコニウム及び酸素供給源 7:軸中央部電子ビーム(Ip) 8:引き出し電圧(Vex) 9:全電子ビーム(It) 10:反応層 11:リング電極 1: Tungsten Chip (W Chip) 2: Suppressor Electrode 3: Tungsten Wire 4: Insulator 5: Metal Struts 6: Zirconium and Oxygen Supply Source 7: Central Electron Beam (Ip) 8: Extraction Voltage (Vex) 9: Total electron beam (It) 10: Reaction layer 11: Ring electrode
Claims (2)
方位が<100>方位のタングステン単結晶の針状電極
とサプレッサー電極からなる熱電界放射陰極において、
ジルコニウム重量が3.0x10-6g 以上10x 10-6 g以下を含
むジルコニウム及び酸素の供給源を、該針状電極と加熱
ヒーターとの接合点から該針状電極の先端方向200 μm
の点と該サプレッサー電極の外表面との間に位置したこ
とを特徴とする熱電界放射陰極。1. A thermoelectric field emission cathode comprising a needle electrode made of a tungsten single crystal with a <100> orientation and a suppressor electrode provided with a zirconium and oxygen coating layer,
Zirconium weight sources zirconium and oxygen containing less 3.0x10 -6 g or 10x 10 -6 g, distal direction 200 of the needle-like electrode from the junction of the heater and the needle-like electrode μm
Point and the outer surface of the suppressor electrode.
mまでの間の領域での円錐形状の輪郭が直線または内側
に湾曲した弧状であることを特徴とする請求項1記載の
熱電界放射陰極。2. 10 μm and 200 μm from the tip of the needle electrode
2. The thermoelectric field emission cathode according to claim 1, wherein the conical contour in the region up to m is a straight line or an arc shape curved inward.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14209993A JP3260204B2 (en) | 1992-06-24 | 1993-06-14 | Thermal field emission cathode |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4-188952 | 1992-06-24 | ||
| JP18895292 | 1992-06-24 | ||
| JP14209993A JP3260204B2 (en) | 1992-06-24 | 1993-06-14 | Thermal field emission cathode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0676731A true JPH0676731A (en) | 1994-03-18 |
| JP3260204B2 JP3260204B2 (en) | 2002-02-25 |
Family
ID=26474209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14209993A Expired - Lifetime JP3260204B2 (en) | 1992-06-24 | 1993-06-14 | Thermal field emission cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3260204B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0755064A3 (en) * | 1995-07-17 | 1997-06-11 | Hitachi Ltd | Cathode comprising a reservoir and its manufacturing process |
| JP2010238384A (en) * | 2009-03-30 | 2010-10-21 | Denki Kagaku Kogyo Kk | Electron source and its use |
| WO2013047397A1 (en) * | 2011-09-26 | 2013-04-04 | 株式会社日立ハイテクノロジーズ | Electric field discharge-type electron source |
| US8593048B2 (en) | 2010-05-10 | 2013-11-26 | Denki Kagaku Kogyo Kabushiki Kaisha | Electron source having a tungsten single crystal electrode |
| CN112786415A (en) * | 2021-03-03 | 2021-05-11 | 大束科技(北京)有限责任公司 | Emission needle structure, thermal field emission electron source and electron microscope |
| WO2022196499A1 (en) | 2021-03-19 | 2022-09-22 | デンカ株式会社 | Emitter and device provided with same |
-
1993
- 1993-06-14 JP JP14209993A patent/JP3260204B2/en not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5838096A (en) * | 1995-07-17 | 1998-11-17 | Hitachi, Ltd. | Cathode having a reservoir and method of manufacturing the same |
| EP0755064A3 (en) * | 1995-07-17 | 1997-06-11 | Hitachi Ltd | Cathode comprising a reservoir and its manufacturing process |
| JP2010238384A (en) * | 2009-03-30 | 2010-10-21 | Denki Kagaku Kogyo Kk | Electron source and its use |
| US8593048B2 (en) | 2010-05-10 | 2013-11-26 | Denki Kagaku Kogyo Kabushiki Kaisha | Electron source having a tungsten single crystal electrode |
| KR20140049006A (en) | 2011-09-26 | 2014-04-24 | 가부시키가이샤 히다치 하이테크놀로지즈 | Electric field discharge-type electron source |
| JP2013084550A (en) * | 2011-09-26 | 2013-05-09 | Hitachi High-Technologies Corp | Electric field discharge type electron source |
| WO2013047397A1 (en) * | 2011-09-26 | 2013-04-04 | 株式会社日立ハイテクノロジーズ | Electric field discharge-type electron source |
| CN103765544A (en) * | 2011-09-26 | 2014-04-30 | 株式会社日立高新技术 | Electric field discharge-type electron source |
| US8866371B2 (en) | 2011-09-26 | 2014-10-21 | Hitachi High-Technologies Corporation | Electric field discharge-type electron source |
| CN103765544B (en) * | 2011-09-26 | 2016-05-11 | 株式会社日立高新技术 | Field emission electron source |
| DE112012003268B4 (en) | 2011-09-26 | 2023-03-23 | Hitachi High-Tech Corporation | Electric field discharge type electron source |
| CN112786415A (en) * | 2021-03-03 | 2021-05-11 | 大束科技(北京)有限责任公司 | Emission needle structure, thermal field emission electron source and electron microscope |
| WO2022196499A1 (en) | 2021-03-19 | 2022-09-22 | デンカ株式会社 | Emitter and device provided with same |
| US12125663B2 (en) | 2021-03-19 | 2024-10-22 | Denka Company Limited | Emitter and device provided with same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3260204B2 (en) | 2002-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5449968A (en) | Thermal field emission cathode | |
| JP2661992B2 (en) | Scandat cathode and electron beam tube provided with the cathode | |
| EP0755064A2 (en) | Cathode having a reservoir and method of manufacturing the same | |
| KR900004762B1 (en) | Impregnated cathode | |
| TWI489508B (en) | Electron source | |
| JP3260204B2 (en) | Thermal field emission cathode | |
| JP3264775B2 (en) | Thermal field emission electron gun | |
| CN1037880C (en) | Cathode for electric discharge tube | |
| EP2242084B1 (en) | Method of manufacturing an electron source | |
| KR890004116B1 (en) | Dispenser-type cathodes | |
| KR100189035B1 (en) | Scandate cathode and method of making it | |
| EP0813221B1 (en) | Method of making a needle electrode | |
| JP3397570B2 (en) | Thermal field emission cathode | |
| EP1067580B1 (en) | Discharge tube for light source | |
| JP4018468B2 (en) | Cathode and manufacturing method thereof | |
| CN113038680B (en) | Arc ablation-resistant electrode structure and preparation method thereof | |
| JP2003007195A (en) | Electron emission cathode and method of manufacturing the same | |
| JPH0630214B2 (en) | Impregnated cathode and manufacturing method thereof | |
| JP2010238384A (en) | Electron source and its use | |
| KR100259298B1 (en) | Impregnation-type cathode for crt | |
| JP3715790B2 (en) | Method for producing impregnated cathode for discharge tube | |
| US6509570B1 (en) | Gallium ion source | |
| WO2006061774A1 (en) | Cathode for electron emission | |
| JPH11154489A (en) | Cathode for discharge tube, manufacture of the cathode and arc lamp | |
| KR920008786B1 (en) | Cathode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071214 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081214 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091214 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091214 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101214 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111214 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111214 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121214 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121214 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131214 Year of fee payment: 12 |
|
| EXPY | Cancellation because of completion of term |