JPH0680656B2 - Method for forming oxide thin film - Google Patents
Method for forming oxide thin filmInfo
- Publication number
- JPH0680656B2 JPH0680656B2 JP62287622A JP28762287A JPH0680656B2 JP H0680656 B2 JPH0680656 B2 JP H0680656B2 JP 62287622 A JP62287622 A JP 62287622A JP 28762287 A JP28762287 A JP 28762287A JP H0680656 B2 JPH0680656 B2 JP H0680656B2
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- Prior art keywords
- thin film
- oxide thin
- tantalum oxide
- oxygen
- substrate
- Prior art date
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- Formation Of Insulating Films (AREA)
Description
【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、半導体装置などの電子素子に使用する誘電材
料である酸化タンタル薄膜の形成方法に関する。TECHNICAL FIELD The present invention relates to a method for forming a tantalum oxide thin film, which is a dielectric material used in electronic devices such as semiconductor devices.
〈従来の技術及びその問題点〉 VLSI等のマイクロエレクトロニクス素子では、より集積
化を進めるために容量部に高い誘電率をもつ誘電膜を導
入する試みが行なわれている。そのもっとも実用化に近
い材料として、酸化タンタル膜（Ta2O5）がある。この
酸化タンタル膜の形成方法には、従来、次の様な方法が
とられてきた：（１）蒸着物質を溶融，蒸発させて目的
とする基板に付着させる真空蒸着法，（２）陰極をター
ゲットとして陽イオンを衝突させ、たたき出された原子
を基板に付着させるスパッタリング法，（３）気相中の
化学反応を用いて基板に膜を成長させるCVD法。<Prior Art and Problems Thereof> In microelectronic devices such as VLSI, attempts have been made to introduce a dielectric film having a high dielectric constant into the capacitor portion in order to promote further integration. A tantalum oxide film (Ta 2 O 5 ) is the most practical material. The following methods have been conventionally used to form this tantalum oxide film: (1) a vacuum vapor deposition method in which a vapor deposition material is melted and evaporated to adhere to a target substrate, and (2) a cathode is used. A sputtering method in which cations are made to collide as a target to attach the knocked out atoms to the substrate, and (3) a CVD method in which a film is grown on the substrate using a chemical reaction in the gas phase.
このなかで、（１）の真空蒸着法でタンタル酸化物を蒸
発させ、基板に付着させる場合、蒸気圧の低い低級酸化
物として基板に至ることが多く、化学的に安定な量論組
成からずれを生じ易い。また、上記（２）のスパッタリ
ング法ではタンタル酸化物がターゲットであり、該ター
ゲットを構成するタンタルと酸素とではスパッタ効率が
異なるため、得られる酸化タンタル薄膜は化学量論的組
成からずれたものとなる。更に、上記（３）のCVD法を
用いても、高温下でしかも特定の原料ガス混合比を選ば
なければ安定な組成の酸化タンタル薄膜は形成されず、
実用に向かない。Among these, when the tantalum oxide is vaporized by the vacuum vapor deposition method of (1) and attached to the substrate, it often reaches the substrate as a low-grade oxide having a low vapor pressure, which causes deviation from a chemically stable stoichiometric composition. Is likely to occur. Further, in the sputtering method of (2) above, tantalum oxide is the target, and the tantalum and oxygen constituting the target have different sputtering efficiencies, so that the obtained tantalum oxide thin film deviates from the stoichiometric composition. Become. Further, even if the CVD method of the above (3) is used, a tantalum oxide thin film having a stable composition is not formed at a high temperature and unless a specific raw material gas mixing ratio is selected.
Not suitable for practical use.
また、上記（１）〜（３）のいずれの方法を用いても、
低温下で形成された直後の酸化タンタル薄膜は通常多く
の欠陥を含む。Moreover, even if any of the above methods (1) to (3) is used,
A tantalum oxide thin film immediately after being formed at a low temperature usually contains many defects.
上述した組成のずれや欠陥は酸化タンタル薄膜の電気的
な絶縁性を悪化させてリーク電流を生じさせたり、キャ
リアのトラップを作って電気的特性を劣化させるほか、
その化学的安定性を低下させる要因にもなる。The compositional deviations and defects described above deteriorate the electrical insulation of the tantalum oxide thin film to cause a leak current, and create carrier traps to deteriorate the electrical characteristics.
It also becomes a factor that lowers its chemical stability.
これを解決するために、酸化タンタル薄膜が形成された
基板を600℃以上の高温の酸化雰囲気中に一定時間以上
保持して、酸化タンタル薄膜をより緻密にする方法があ
る。ところが、基板に高温熱処理を施すと、半導体素子
を構成する基板，及び基板上の種々の薄膜の間での反応
の発生或いは相転移等により、所望の半導体素子の特性
が失われるという問題があり、半導体素子の信頼性を保
つため600℃以上の高温熱処理は行なえない。In order to solve this, there is a method in which the substrate on which the tantalum oxide thin film is formed is kept in an oxidizing atmosphere at a high temperature of 600 ° C. or higher for a certain period of time or more to make the tantalum oxide thin film more dense. However, there is a problem that when the substrate is subjected to high temperature heat treatment, desired characteristics of the semiconductor element are lost due to reaction or phase transition between the substrate forming the semiconductor element and various thin films on the substrate. However, in order to maintain the reliability of semiconductor devices, high temperature heat treatment above 600 ℃ cannot be performed.
上記の欠点を解消し、良好な特性を得る目的で、本発明
の発明者らは、基板上に光CVD法にて酸化タンタル薄膜
を成膜し、該成膜後、引き続き基板を一定の温度に保持
しながら酸素雰囲気中で紫外線を照射する方法を提案し
た（昭和62年春季応用物理学会）。この方法を用いる
と、比較的低温の熱処理で膜質改善が行なえ、酸化タン
タル薄膜の電気的特性の向上が図れる。In order to eliminate the above-mentioned drawbacks and obtain good characteristics, the inventors of the present invention form a tantalum oxide thin film on a substrate by a photo CVD method, and after the film formation, the substrate is continuously kept at a constant temperature. We proposed a method of irradiating ultraviolet rays in an oxygen atmosphere while maintaining the temperature (Spring Society of Applied Physics, 1987). Using this method, the film quality can be improved by heat treatment at a relatively low temperature, and the electrical characteristics of the tantalum oxide thin film can be improved.
しかし、光CVDによる成膜法では、光源と基板を対向さ
せる必要があり、スループットを向上させるために大面
積の基板や多数枚の基板を一度に処理しようとすると、
装置が非常に大型化して経済性が損われ、また、光の照
射窓に酸化タンタル薄膜が次第に付着して透過光強度が
低下し、成膜の制御が困難になるという問題点が生じ
る。したがってスパッタリング法や真空蒸着法のような
既に確立された成膜方法と比較すると、現時点で工業的
に実用化するのには困難をともなう。However, in the film formation method by photo-CVD, it is necessary to make the light source and the substrate face each other, and when trying to process a large-area substrate or a large number of substrates at once in order to improve throughput,
There is a problem that the device becomes very large and the economy is impaired, and the tantalum oxide thin film is gradually attached to the light irradiation window to reduce the transmitted light intensity, which makes it difficult to control the film formation. Therefore, as compared with the already established film forming methods such as the sputtering method and the vacuum vapor deposition method, it is difficult to put them into practical use at the present time.
〈問題点を解決するための手段〉 本発明は上述する問題点を解決するためになされたもの
で、スパッタリング法、真空蒸着法、又は熱CVD法を用
いて、基板上に高誘電率を有する重金属酸化物薄膜を形
成させた後、前記基板を、活性化状態に励起された酸化
剤を含む雰囲気中でアニールしてなることを特徴とする
酸化物薄膜の形成方法 〈作用〉 上述の如く、高誘電率を有する重金属酸化物薄膜を成膜
させた基板を、活性化状態に励起された酸化剤を含む雰
囲気中でアニールすることにより、スパッタ法，蒸着
法，或いは熱CVD法で成膜され、従来使用に耐えなかっ
た酸化物薄膜の組成安定化，及びトラップ密度低減が図
れて、リーク電流の低減等酸化物薄膜の特性が改善でき
る。<Means for Solving Problems> The present invention has been made to solve the above problems, and has a high dielectric constant on a substrate by using a sputtering method, a vacuum deposition method, or a thermal CVD method. After forming a heavy metal oxide thin film, the substrate is annealed in an atmosphere containing an oxidant excited to an activated state, a method for forming an oxide thin film <Operation> As described above. A substrate on which a heavy metal oxide thin film having a high dielectric constant is formed is annealed in an atmosphere containing an oxidant excited to be activated to form a film by a sputtering method, a vapor deposition method, or a thermal CVD method. In addition, the composition of the oxide thin film, which cannot be used conventionally, can be stabilized and the trap density can be reduced, and the characteristics of the oxide thin film can be improved such as the reduction of leak current.
〈実施例〉 以下、図面を用いて本発明の実施例を詳述するが、本発
明はこれに限定されるものではない。<Example> Hereinafter, an example of the present invention will be described in detail with reference to the drawings, but the present invention is not limited thereto.
第１図は本発明の一実施例を製造するための装置断面図
である。先ず、五酸化タンタルをターゲットとする高周
波マグネトロンスパッタ装置（図示せず）を用い、従来
公知の技術にて基板５上に酸化タンタル薄膜を形成す
る。該基板５を第１図に示す装置のホットプレートベル
ト４上に載置し、該ベルト４を動かすことにより基板５
を反応器１内に搬送させる。この反応器１内部は流量コ
ントローラ７により毎分１の流量に制御された酸素が
流入されて１気圧に保たれる。反応器１内に搬送された
基板５はホットプレートベルト４下の加熱用ヒータ６に
より加熱されて、400℃に保持されたまま、約60分間で
反応器１から搬出される。この時、反応器１のホットプ
レートベルト４上部は合成石英４で構成されており、合
成石英４上に低圧水銀ランプ３が配置されて反応器１内
部に紫外光が供給され、酸素を活性化状態に励起する。FIG. 1 is a sectional view of an apparatus for manufacturing an embodiment of the present invention. First, a tantalum oxide thin film is formed on the substrate 5 by a conventionally known technique using a high frequency magnetron sputtering device (not shown) that targets tantalum pentoxide. The substrate 5 is placed on the hot plate belt 4 of the apparatus shown in FIG. 1, and the belt 5 is moved by moving the belt 4.
Are transported into the reactor 1. Oxygen controlled to a flow rate of 1 per minute by a flow rate controller 7 flows into the interior of the reactor 1 and is maintained at 1 atm. The substrate 5 carried into the reactor 1 is heated by the heater 6 under the hot plate belt 4 and is carried out of the reactor 1 in about 60 minutes while being kept at 400 ° C. At this time, the upper part of the hot plate belt 4 of the reactor 1 is made of synthetic quartz 4, the low-pressure mercury lamp 3 is arranged on the synthetic quartz 4, and ultraviolet light is supplied to the inside of the reactor 1 to activate oxygen. Excited to the state.
スパッタ法で形成された酸化タンタル薄膜は、成膜直後
ではタンタルと酸素の原子比が、安定な2:5よりも酸素
欠損側にずれており、この欠損がキャリアのトラップを
して作用してその絶縁性を悪化させる。そこでこの酸素
が欠損した酸化タンタル薄膜を上述の如き反応器１内に
搬入すると、反応器１内部で次の光化学反応により生じ
た活性な酸素ラジカルによって前記酸化タンタル薄膜の
酸化が進行する。In the tantalum oxide thin film formed by the sputtering method, the atomic ratio of tantalum and oxygen is shifted to the oxygen deficiency side from the stable 2: 5 immediately after the film formation, and this deficiency acts as a carrier trap. It deteriorates its insulating property. Therefore, when the oxygen-deficient tantalum oxide thin film is carried into the reactor 1 as described above, the oxidation of the tantalum oxide thin film proceeds due to the active oxygen radicals generated by the next photochemical reaction in the reactor 1.
3O2→2O3 （＜195nm） O3→Ｏ＋O2 （200〜300nm） これによって酸化タンタル薄膜の酸素欠損は新たな酸素
原子で埋められ、化学量論組成に近い安定な状態が得ら
れる。3O 2 → 2O 3 (<195 nm) O 3 → O + O 2 (200-300 nm) Oxygen vacancies in the tantalum oxide thin film are filled with new oxygen atoms, and a stable state close to the stoichiometric composition is obtained.
上記本実施例において酸化タンタル薄膜成膜装置として
高周波マグネトロンスパッタ装置を用いたが、本発明は
これに限定されるものではなく、高周波マグネトロンス
パッタ装置の如く既に量産可能な市販の装置であって短
時間で多数枚の処理が可能であれば、他のスパッタ装
置，或いは真空蒸着装置，熱CVD装置等他の装置を採用
してもよい。Although the high frequency magnetron sputtering apparatus is used as the tantalum oxide thin film deposition apparatus in the above-mentioned embodiment, the present invention is not limited to this, and it is a commercially available apparatus such as a high frequency magnetron sputtering apparatus that can be mass-produced. Other devices such as a sputtering device, a vacuum vapor deposition device, a thermal CVD device, etc. may be adopted if a large number of wafers can be processed in a time.
また上記本実施例において反応器内に供給するガスとし
て酸素を用いたが、本発明はこれに限定されるものでは
なく、光源の波長によって活性化状態に励起される酸化
剤（酸素ラジカル，オゾン，酸素イオン等）となるガス
であれば、亜酸化窒素等他のガスを適用してもよい。Further, although oxygen was used as the gas supplied into the reactor in the above Example, the present invention is not limited to this, and an oxidant (oxygen radical, ozone that is excited to an activated state depending on the wavelength of the light source) is used. , Other gas such as nitrous oxide may be used as long as it is a gas that becomes oxygen ions.
ここで、上述の如く酸化タンタル薄膜を活性な酸化剤に
晒す際、酸化タンタル薄膜を支える下地にシリコン原子
が含まれると、該シリコン原子が酸化タンタル薄膜表面
に向かう拡散が促進されて酸化タンタル薄膜中の酸素欠
損部にシリコン原子が結合し、トラップを消滅できる。
したがって、酸化タンタル薄膜の下地として多結晶シリ
コン或いは高融点金属シリサイド（例えばタングステン
シリサイド）等シリコンを成分として含む材料を用いる
と、本発明は尚一層効果的である。Here, when the tantalum oxide thin film is exposed to an active oxidant as described above, if silicon atoms are contained in the base material that supports the tantalum oxide thin film, diffusion of the silicon atoms toward the tantalum oxide thin film surface is promoted, and the tantalum oxide thin film is promoted. Silicon atoms are bonded to the oxygen deficiency portion in the inside, and the trap can be eliminated.
Therefore, the present invention is even more effective when a material containing silicon such as polycrystalline silicon or refractory metal silicide (eg, tungsten silicide) is used as the base of the tantalum oxide thin film.
本発明は、これらの作用によって酸素欠損に起因する特
性劣化、特に絶縁性に関して顕著な改善を与えることを
可能にする。The present invention makes it possible to give a remarkable improvement in the characteristic deterioration due to oxygen deficiency, particularly the insulating property by these effects.
第２図は酸化タンタル薄膜のリーク電流について本実施
例と従来例とを比較したもので、図中ａは成膜直後の酸
化タンタル薄膜の特性、図中ｂは成膜後窒素中で２時間
光照射アニールを行なった酸化タンタル薄膜の特性、図
中ｃは成膜後酸素中で２時間熱アニール（光照射せず）
を行なった酸化タンタル薄膜の特性，図中ｄは成膜後酸
素中で２時間光照射アニールを行なった本実施例による
酸化タンタル薄膜の特性を示す。同図から明らかなよう
に、酸素中で光照射アニールを行なった酸化タンタル薄
膜はリーク電流が著しく低減し、誘電体として好ましい
特性となっていることがわかる。FIG. 2 compares the leakage current of the tantalum oxide thin film between this example and the conventional example. In the figure, a shows the characteristics of the tantalum oxide thin film immediately after film formation, and b in the figure shows 2 hours in nitrogen after film formation. Characteristics of tantalum oxide thin film annealed by light irradiation, c in the figure is thermal annealing in oxygen for 2 hours after film formation (no light irradiation)
The characteristics of the tantalum oxide thin film thus obtained are shown, and d in the figure shows the characteristics of the tantalum oxide thin film according to the present embodiment which has been subjected to light irradiation annealing in oxygen for 2 hours after the film formation. As is clear from the figure, the tantalum oxide thin film annealed by irradiation with light in oxygen has a significantly reduced leak current, which is a desirable characteristic as a dielectric.
第３図は酸素中、400℃での光照射アニール処理時間に
対する酸化タンタル薄膜のリーク電流量の関係を示し、
図中ａは成膜直後の酸化タンタル薄膜の特性、図中ｂは
10分間上記処理を行なった酸化タンタル薄膜の特性、図
中ｃは30分間上記処理を行なった酸化タンタル薄膜の特
性、図中ｄは60分間上記処理を行なった酸化タンタル薄
膜の特性、図中ｅは90分間上記処理を行なった酸化タン
タル薄膜の特性、図中ｆは120分間上記処理を行なった
酸化タンタル薄膜の特性を示す。同図から明らかなよう
に、400℃の処理温度においては60分間の処理でリーク
電流の大幅な低減が見られ、120分間の処理でリーク電
流が数桁低減されほぼ飽和していることがわかる。この
ように活性化状態に励起された酸化剤を含む雰囲気中で
酸化タンタル薄膜を60分以上アニールすることにより、
酸化タンタル薄膜の実用に際して最も問題となっていた
リーク電流を実用的なレベルまで低減することが可能に
なる。Fig. 3 shows the relationship of the leak current amount of the tantalum oxide thin film to the light irradiation annealing time at 400 ° C in oxygen,
In the figure, a is the characteristics of the tantalum oxide thin film immediately after film formation, and b is the figure.
Characteristics of the tantalum oxide thin film subjected to the above treatment for 10 minutes, c in the figure is characteristics of the tantalum oxide thin film subjected to the above treatment for 30 minutes, and d in the figure is characteristics of the tantalum oxide thin film subjected to the above treatment for 60 minutes, e in the figure. Indicates the characteristics of the tantalum oxide thin film that has been subjected to the above treatment for 90 minutes, and f in the figure shows the characteristics of the tantalum oxide thin film that has undergone the above treatment for 120 minutes. As is clear from the figure, at the processing temperature of 400 ° C., the leakage current is significantly reduced in the treatment for 60 minutes, and the leakage current is reduced by several orders of magnitude in the treatment for 120 minutes, and is almost saturated. . By annealing the tantalum oxide thin film for 60 minutes or more in the atmosphere containing the oxidant excited in the activated state,
It becomes possible to reduce the leakage current, which has been the most problematic problem in practical use of the tantalum oxide thin film, to a practical level.
また、上記本実施例では紫外線を用いて酸化剤を活性化
状態に励起したが、本発明はこれに限定されるものでは
なく、直流，交流放電，或いは高周波放電（マイクロ波
放電を含む）を利用して行なったり、磁場と高周波（マ
イクロ波を含む）の相互作用によりプラズマを発生させ
て行なう等他の方式を用いてもよい。第４図は直流放電
型のプラズマ発生装置で酸素プラズマを発生させ、該酸
素プラズマ中でアニールを行なった酸化タンタル薄膜の
リーク電流の変化を示したものである。同図中ａは従来
の成膜直後の酸化タンタル薄膜の特性、同図中ｂは酸素
プラズマ中、400℃下で120分間アニールを行なった酸化
タンタル薄膜の特性を示す。酸素プラズマ中でアニール
する場合、放電により高エネルギーの粒子も同時に発生
して膜中に欠陥を生じさせ、逆に特性劣化を招くことも
あるため、放電領域から酸化タンタル薄膜に到る空間に
適当なバイアスを印加した導電性のメッシュを設ける等
の方法を用いて高エネルギー粒子が酸化タンタル薄膜に
到達するのを防ぐとよい。同図から明らかなようにプラ
ズマ酸素中のアニールによっても光照射アニールと同様
の効果が得られることがわかる。In addition, although the oxidant is excited to the activated state by using ultraviolet rays in the above-mentioned embodiment, the present invention is not limited to this, and direct current, alternating current discharge, or high frequency discharge (including microwave discharge) may be used. Other methods may be used, for example, the method may be used, or plasma may be generated by the interaction of a magnetic field and high frequency waves (including microwaves). FIG. 4 shows changes in the leak current of the tantalum oxide thin film annealed in the oxygen plasma by generating oxygen plasma with a DC discharge type plasma generator. In the figure, a shows the characteristics of the conventional tantalum oxide thin film immediately after film formation, and b in the figure shows the characteristics of the tantalum oxide thin film annealed in oxygen plasma at 400 ° C. for 120 minutes. When annealed in oxygen plasma, high-energy particles may also be generated at the same time due to discharge, causing defects in the film and conversely degrading characteristics, so it is suitable for the space from the discharge region to the tantalum oxide thin film. It is preferable to prevent the high-energy particles from reaching the tantalum oxide thin film by using a method such as providing a conductive mesh to which various biases are applied. As is clear from the figure, it is understood that the same effect as the light irradiation annealing can be obtained by the annealing in plasma oxygen.
上記本実施例では酸化タンタル薄膜を用いて説明した
が、本発明はこれに限定されるものではなく、二酸化チ
タン，二酸化ハフニウム，二酸化ジルコニウム等他の高
誘電率絶縁膜においても同様の効果が得られる。Although the present embodiment has been described by using the tantalum oxide thin film, the present invention is not limited to this, and similar effects can be obtained in other high dielectric constant insulating films such as titanium dioxide, hafnium dioxide, zirconium dioxide. To be
また、シリコン酸化膜においては通常上記高誘電率絶縁
膜のような酸素欠損は生じ難いが、膜厚が比較的薄い場
合や成膜方法によっては酸素欠損が導入されることがあ
り、このようなとき上述の処理を行なうことによって、
同様の効果が認められる。Further, in the silicon oxide film, oxygen deficiency is unlikely to occur unlike in the above-described high dielectric constant insulating film, but oxygen deficiency may be introduced depending on the film thickness or the film formation method. By performing the above process,
Similar effect is observed.
〈発明の効果〉 本発明により、従来使用に耐えなかった高誘電率を有す
る重金属酸化物薄膜の膜質を改善することが可能になる
ため、量産的な成膜手法を用いながら優れた特性を有す
る重金属酸化薄膜を形成することが可能になる。<Effects of the Invention> Since the present invention makes it possible to improve the film quality of a heavy metal oxide thin film having a high dielectric constant that cannot be conventionally used, it has excellent characteristics while using a mass-production method. It becomes possible to form a heavy metal oxide thin film.
第１図は本発明の一実施例を製造する装置断面図、第２
図乃至第４図は本発明の実施例と従来例との特性比較図
である。 １……反応器、２……石成石英、３……低圧水銀ラン
プ、４……ホットプレートベルト、５……基板、６……
加熱用ヒータ、７……流量コントローラ。FIG. 1 is a sectional view of an apparatus for manufacturing an embodiment of the present invention,
4 to 4 are characteristic comparison diagrams of the embodiment of the present invention and the conventional example. 1 ... Reactor, 2 ... Stone quartz, 3 ... Low-pressure mercury lamp, 4 ... Hot plate belt, 5 ... Substrate, 6 ...
Heater for heating, 7 ... Flow controller.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−252961（ＪＰ，Ａ) 特開 昭59−78553（ＪＰ，Ａ) 特開 昭57−199227（ＪＰ，Ａ) 特開 昭59−168643（ＪＰ，Ａ) 特開 昭62−219528（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-62-252961 (JP, A) JP-A-59-78553 (JP, A) JP-A-57-199227 (JP, A) JP-A-59- 168643 (JP, A) JP-A-62-219528 (JP, A)
Claims (1)
D法を用いて、基板上に高誘電率を有する重金属酸化物
薄膜を形成させた後、前記基板を、活性化状態に励起さ
れた酸化剤を含む雰囲気中でアニールしてなることを特
徴とする、酸化物薄膜の形成方法。1. Sputtering method, vacuum deposition method, or thermal CV
After forming a heavy metal oxide thin film having a high dielectric constant on the substrate by using the D method, the substrate is annealed in an atmosphere containing an oxidant excited to an activated state. A method for forming an oxide thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62287622A JPH0680656B2 (en) | 1987-11-13 | 1987-11-13 | Method for forming oxide thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62287622A JPH0680656B2 (en) | 1987-11-13 | 1987-11-13 | Method for forming oxide thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01128531A JPH01128531A (en) | 1989-05-22 |
| JPH0680656B2 true JPH0680656B2 (en) | 1994-10-12 |
Family
ID=17719636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62287622A Expired - Fee Related JPH0680656B2 (en) | 1987-11-13 | 1987-11-13 | Method for forming oxide thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0680656B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3664033B2 (en) * | 2000-03-29 | 2005-06-22 | セイコーエプソン株式会社 | Ceramic manufacturing method and manufacturing apparatus thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57199227A (en) * | 1981-06-03 | 1982-12-07 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS5978553A (en) * | 1982-10-27 | 1984-05-07 | Hitachi Ltd | Capacitor and its manufacturing method |
| JPS59168643A (en) * | 1983-03-15 | 1984-09-22 | Fuji Electric Corp Res & Dev Ltd | Compacting treatment method of oxide film |
| JPS62252961A (en) * | 1985-11-22 | 1987-11-04 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS62219528A (en) * | 1986-03-19 | 1987-09-26 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1987
- 1987-11-13 JP JP62287622A patent/JPH0680656B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01128531A (en) | 1989-05-22 |
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