JPH0697409A - Image reader - Google Patents
Image readerInfo
- Publication number
- JPH0697409A JPH0697409A JP4352328A JP35232892A JPH0697409A JP H0697409 A JPH0697409 A JP H0697409A JP 4352328 A JP4352328 A JP 4352328A JP 35232892 A JP35232892 A JP 35232892A JP H0697409 A JPH0697409 A JP H0697409A
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- light emitting
- emitting element
- transparent layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000011521 glass Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はファクシミリやスキャナ
等に用いられる画像読取装置に係り、特に画像読取装置
の読み取り部を構成するイメ−ジセンサの分解能を向上
させるための構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image reading apparatus used in a facsimile, a scanner or the like, and more particularly to a structure for improving the resolution of an image sensor which constitutes a reading section of the image reading apparatus.
【０００２】[0002]
【従来の技術】従来、ファクシミリやスキャナ等に使用
される密着型の画像読取装置は、蛍光灯光源と、原稿幅
長を有するイメ−ジセンサと、原稿からの反射光をイメ
−ジセンサに結像させる等倍光学系とから成り、原稿か
らの濃度に応じた反射光による光信号を電気信号として
直線状に配置されたイメ−ジセンサの受光素子アレイに
電気的走査によって蓄積し、この電気信号を時系列的に
出力して画像信号を得るものである。この画像読取装置
によれば、縮小光学系を用いる方式に比較して装置の小
型化を図ることができるが、等倍光学系としてロッドレ
ンズアレイ等を使用するので装置の小型化に限度がある
という欠点があった。2. Description of the Related Art Conventionally, a contact type image reading apparatus used for a facsimile, a scanner or the like forms a fluorescent light source, an image sensor having a document width and an image of reflected light from the document on the image sensor. The optical signal of the reflected light according to the density from the original is stored as an electric signal in the light receiving element array of the linearly arranged image sensor by electric scanning and the electric signal is stored. An image signal is obtained by outputting in time series. According to this image reading apparatus, the size of the apparatus can be reduced as compared with the method using the reduction optical system, but since the rod lens array or the like is used as the unit magnification optical system, there is a limit to the reduction in the size of the apparatus. There was a drawback.
【０００３】そこで、光源としてＥＬ発光素子を用い、
ＥＬ発光素子と密着型イメ−ジセンサとを一体化した超
小型の画像読取装置が提案されている。この画像読取装
置は、例えば図３に示すように、基板１０上に形成され
た受光素子１００と、基板２０上に形成されたＥＬ発光
素子２００とを、透光層３０を挟んで相対向するように
配置して構成される。前記受光素子１００は、一列にア
レイ状に並べられた複数の光電変換素子としての画素１
０１から成る。ＥＬ発光素子２００から発光した光は、
基板２０の反発光素子側に配置した原稿４００面を照射
し、その反射光５００が受光素子１００の画素１０１に
入射するように構成している。Therefore, an EL light emitting element is used as a light source,
An ultra-small image reading device has been proposed in which an EL light emitting element and a contact-type image sensor are integrated. In this image reading apparatus, for example, as shown in FIG. 3, a light receiving element 100 formed on a substrate 10 and an EL light emitting element 200 formed on a substrate 20 face each other with a light transmitting layer 30 in between. It is arranged and configured. The light receiving element 100 includes pixels 1 as a plurality of photoelectric conversion elements arranged in a line in an array.
It consists of 01. The light emitted from the EL light emitting element 200 is
The surface of the original document 400 arranged on the side opposite to the light emitting element of the substrate 20 is irradiated, and the reflected light 500 enters the pixel 101 of the light receiving element 100.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記の
ような画像読取装置によれば、基板２０と透光層３０と
を同じ材質の部材（例えばガラス基板）で形成していた
ので、両者の屈折率が同じになり次のような問題点があ
った。すなわち、原稿４００からの反射光が前記受光素
子１００側に入射する際、受光素子１００の画素１０１
ａに着目すると、反射光５００及び反射光６００が画素
１０１ａに入射する。反射光５００は画素１０１ａが読
み取る原稿の領域Ａからの反射光であるが、反射光６０
０は領域Ａ以外からの反射光である。従って、画素１０
１ａには、読み取るべき原稿の領域Ａ以外の反射光６０
０を含んだ光の総光量に対して電荷が蓄積されるので、
画素１０１ａから出力される電気信号には不要な光によ
るものを含むこととなり、受光素子１００の分解能（Ｍ
ＴＦ）の低下をまねいてしまう。However, according to the image reading apparatus as described above, since the substrate 20 and the light transmitting layer 30 are formed of the same material (for example, a glass substrate), the refraction of both is prevented. The rate became the same and there were the following problems. That is, when the reflected light from the document 400 enters the light receiving element 100 side, the pixel 101 of the light receiving element 100
Focusing on a, the reflected light 500 and the reflected light 600 enter the pixel 101a. The reflected light 500 is the reflected light from the area A of the document read by the pixel 101a.
0 is the reflected light from areas other than the area A. Therefore, the pixel 10
1a includes reflected light 60 other than the area A of the original to be read.
Since the electric charge is accumulated for the total amount of light including 0,
The electric signal output from the pixel 101a includes a signal due to unnecessary light, and the resolution (M
It causes a decrease in TF).
【０００５】本発明は上記実情に鑑みてなされたもの
で、発光素子と密着型イメ−ジセンサとを一体化した画
像読取装置において、一画素が読み取る原稿の領域から
の反射光が当該画素以外の画素に入射することなく、イ
メ−ジセンサの分解能（ＭＴＦ）の向上を図る画像読取
装置を提供することを目的とする。The present invention has been made in view of the above circumstances, and in an image reading apparatus in which a light emitting element and a contact type image sensor are integrated, reflected light from a region of a document read by one pixel is different from that of the pixel. It is an object of the present invention to provide an image reading apparatus that improves the resolution (MTF) of an image sensor without entering a pixel.
【０００６】[0006]
【課題を解決するための手段】上記従来例の問題点を解
決するため本発明の画像読取装置は、第１の基板上に形
成された受光素子と、第２の基板上に形成された発光素
子とを透光層を挟んで相対向するように配置し、前記発
光素子からの光を前記第２の基板の反発光素子側に配置
した原稿面に照射させ、その反射光が前記受光素子に入
射するようにした画像読取装置において、前記第２の基
板より屈折率の小さい媒体で前記透光層を形成したこと
を特徴としている。In order to solve the above-mentioned problems of the conventional example, an image reading apparatus of the present invention is provided with a light receiving element formed on a first substrate and a light emitting element formed on a second substrate. The element and the light-transmitting layer are arranged so as to face each other, and light from the light-emitting element is applied to a document surface arranged on the side opposite to the light-emitting element of the second substrate, and reflected light from the light-receiving element. In the image reading apparatus adapted to be incident on, the light transmitting layer is formed of a medium having a refractive index smaller than that of the second substrate.
【０００７】[0007]
【作用】本発明によれば、原稿と受光素子との間に存在
する第２の基板に比較して屈折率が小さい媒体で透光層
を形成したので、原稿面で反射した反射光は光学的に密
な媒質から疎な媒質へ入射する。従って、前記第２の基
板と透光層との屈折率の比できまる臨界角以上の入射角
で透光層に入射しようとする原稿からの反射光は、透光
層の上面で全反射し、受光素子側に入射することがな
い。According to the present invention, since the light transmitting layer is formed of a medium having a smaller refractive index than the second substrate existing between the original and the light receiving element, the reflected light reflected by the original surface is optically reflected. From a dense medium to a sparse medium. Therefore, the reflected light from the document which is about to enter the transparent layer at an incident angle that is equal to or greater than the critical angle that can be obtained by the ratio of the refractive indexes of the second substrate and the transparent layer is totally reflected on the upper surface of the transparent layer. , Does not enter the light receiving element side.
【０００８】[0008]
【実施例】本発明の一実施例について図面を参照しなが
ら説明する。図１及び図２は、本発明の実施例に係る画
像読取装置を示し、第３図に示した従来例と同一の構成
をとる部分については同一符号を付している。この画像
読取装置は、絶縁基板１０に形成した受光素子１００
と、透光性の絶縁基板２０上に形成したＥＬ発光素子２
００とで、透光層３００を挟んで構成されている。受光
素子１００は、方形状の画素部１１ａと引き出し部１１
ｂを有する複数の個別電極（クロムパタ−ン）１１と帯
状の共通電極（ＩＴＯ）１３とで光導電層（ａ−Ｓｉ）
１２を挟持し、画素部１１ａ，光導電層１２，共通電極
１３が重なり合う部分が光電変換素子となるサンドイッ
チ構造のセンサ画素１０１を形成している。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the drawings. 1 and 2 show an image reading apparatus according to an embodiment of the present invention, in which parts having the same configurations as those of the conventional example shown in FIG. 3 are designated by the same reference numerals. This image reading apparatus includes a light receiving element 100 formed on an insulating substrate 10.
And an EL light emitting element 2 formed on a translucent insulating substrate 20.
00, the transparent layer 300 is sandwiched therebetween. The light receiving element 100 includes a rectangular pixel portion 11a and a lead portion 11
Photoconductive layer (a-Si) with a plurality of individual electrodes (chrome pattern) 11 having b and a strip-shaped common electrode (ITO) 13.
A sensor pixel 101 having a sandwich structure in which the pixel portion 11a, the photoconductive layer 12, and the common electrode 13 are sandwiched and the photoelectric conversion element is formed in the overlapping portion is formed.
【０００９】ＥＬ発光素子２００は、ＺｎＳ：Ｍｎ等か
ら成る発光層２３を、Ｙ2Ｏ3 ，Ｓｉ3Ｎ4 ，ＢａＴｉＯ
3 等から成る絶縁層２２，２４で挾持し、更にこれらを
ＩＴＯ，Ｉｎ2Ｏ3 ，ＳｎＯ2 等から成る共通電極２１
とアルミニウム等の金属から成る不透明な金属電極２５
とで挟持して構成される。金属電極２５には、発光層２
３から発光した光が原稿４００を照射し、その反射光が
前記受光素子１００に入射するように、受光素子１００
の各画素部１１ａ上にこの画素部１１ａより面積が小さ
い方形状の光入射窓２６が開口形成されている。In the EL light emitting device 200, the light emitting layer 23 made of ZnS: Mn or the like is used for Y 2 O 3 , Si 3 N 4 , and BaTiO 3.
It is sandwiched by insulating layers 22 and 24 made of 3 or the like, and these are further sandwiched by a common electrode 21 made of ITO, In 2 O 3 , SnO 2 or the like.
And an opaque metal electrode 25 made of a metal such as aluminum
It is sandwiched between and. The light emitting layer 2 is formed on the metal electrode 25.
The light receiving element 100 emits light from the light source 3 so as to illuminate the original 400, and the reflected light enters the light receiving element 100.
A rectangular light incident window 26 having an area smaller than that of the pixel portion 11a is formed on each pixel portion 11a.
【００１０】また、受光素子１００の分解能（ＭＴＦ）
は、金属電極２５の光入射窓２６の面積が一定範囲内で
あれば、金属電極２５の光入射窓２６と原稿４００間の
距離（絶縁基板２０の厚さ）及び、受光素子１００と個
別電極２５の光入射窓２６間の距離（透光層３００の厚
さ）に大きく依存する。従って、ＥＬ発光素子２００と
受光素子１００との距離を確保するスペ−サとして透光
層３００を介在させる。この透光層３００は、透光性の
ガラス基板や膜厚の厚い透光性接着剤で構成し、かつこ
の屈折率を絶縁基板２０の屈折率より小さい媒体で形成
している。Further, the resolution (MTF) of the light receiving element 100
If the area of the light incident window 26 of the metal electrode 25 is within a certain range, the distance between the light incident window 26 of the metal electrode 25 and the document 400 (thickness of the insulating substrate 20) and the light receiving element 100 and the individual electrode. It largely depends on the distance between the 25 light incident windows 26 (thickness of the light transmitting layer 300). Therefore, the translucent layer 300 is interposed as a spacer for ensuring the distance between the EL light emitting element 200 and the light receiving element 100. The translucent layer 300 is formed of a translucent glass substrate or a translucent adhesive having a large film thickness, and is formed of a medium having a refractive index smaller than that of the insulating substrate 20.
【００１１】具体的な例としては、屈折率が１．５程度
のガラス基板［日本電気硝子製 ＢＬＣ（屈折率１．４
９３），コ−ニング製 １７３３（屈折率１．５１
５），ショット製 Ｄ２６３（屈折率１．５２５），Ｈ
ＯＹＡ製 ＮＡ４５（屈折率１．５３３）等］を絶縁基
板２０として使用し、屈折率が１．４程度のシリコン系
の樹脂（ト−レシリコン製ＪＣＲ６１２５）を透光層３
００を構成する透光性接着剤として使用する。As a concrete example, a glass substrate having a refractive index of about 1.5 [BLC manufactured by Nippon Electric Glass (refractive index 1.4
93), Corning 1733 (refractive index 1.51
5), manufactured by Schott D263 (refractive index 1.525), H
NA45 (refractive index 1.533) made by OYA] is used as the insulating substrate 20, and a silicon resin (JCR6125 made by Torre Silicon) having a refractive index of about 1.4 is used as the transparent layer 3.
00 is used as a translucent adhesive.
【００１２】また、屈折率が１．４程度のガラス基板
（ＦＫ５４）を透光層とし、そのガラス基板の上下面に
塗布される薄膜の透光性接着剤を介してＥＬ発光素子及
び受光素子に接着する構造であってもよい。この場合の
透光性接着剤は、前記ガラス板が透過光層３００の役目
をするので、特に屈折率の小さいものを使用する必要は
ない。また、屈折率の小さい光学薄膜たとえばＭｇＦ2
（ｎ＝１．３８）等をＥＬ発光素子の金属膜上に着膜し
てもよい。更に、低屈折率のものとして受光素子直上部
のみ接着剤を存在させず空気層（屈折率ｎが略１．００
に等しい）とすることでより一層の効果が得られる。Further, a glass substrate (FK54) having a refractive index of about 1.4 is used as a light transmitting layer, and an EL light emitting element and a light receiving element are formed through a thin film light transmitting adhesive applied on the upper and lower surfaces of the glass substrate. The structure may be adhered to. In this case, the translucent adhesive does not need to have a particularly low refractive index, because the glass plate serves as the translucent layer 300. Also, an optical thin film having a small refractive index such as MgF 2
(N = 1.38) or the like may be deposited on the metal film of the EL light emitting element. Furthermore, as a material having a low refractive index, an adhesive is not present only above the light-receiving element, and an air layer (having a refractive index n of about 1.00 is used).
It is further equal to the above).
【００１３】次に上述の画像読取装置の製造方法につい
て説明する。この画像読取装置は、受光素子１００，Ｅ
Ｌ発光素子２００をそれぞれ別に作製し、最後にこれら
を接合して形成する。すなわち、ガラス，セラミック等
で形成された絶縁基板１０上に受光素子１００を形成す
る。受光素子１００は、絶縁基板１０上にクロムを着膜
しフォトリソ法によりパタ−ニングして複数の個別電極
１１を形成し、この個別電極１１を覆うようにアモルフ
ァスシリコンを着膜して帯状の光導電層１２を形成し、
この光導電層１２上に酸化インジウム・スズを着膜して
帯状の共通電極１３を形成して成る。Next, a method of manufacturing the above-mentioned image reading apparatus will be described. This image reading apparatus includes light receiving elements 100, E
The L light emitting element 200 is separately manufactured, and finally, these are joined to form. That is, the light receiving element 100 is formed on the insulating substrate 10 made of glass, ceramics or the like. In the light receiving element 100, chromium is deposited on the insulating substrate 10 and patterned by photolithography to form a plurality of individual electrodes 11. Amorphous silicon is deposited to cover the individual electrodes 11 and strip-shaped light is formed. Forming a conductive layer 12,
An indium tin oxide film is formed on the photoconductive layer 12 to form a strip-shaped common electrode 13.
【００１４】５０μｍの膜厚を有するガラス板等で形成
した透光性の絶縁基板２０上に、ＩＴＯ，Ｉｎ2Ｏ3 ，
ＳｎＯ2 等をスパッタ法等で着膜して透明電極２１を形
成し、透明電極２１上にＹ2Ｏ3 ，Ｓｉ3Ｎ4 ，ＢａＴｉ
Ｏ3 等を着膜して絶縁層２２を形成し、絶縁層２２上に
スパッタ法等でＺｎＳ：Ｍｎ等を着膜して帯状の発光層
２３を形成し、再度前記同様の絶縁層２４を形成し、絶
縁層２４上にアルミニウム等の金属を蒸着し、フォトリ
ソ法によりパタ−ニングして光入射窓２６を有する金属
電極２５を形成してＥＬ発光素子２００を作製する。受
光素子１００を形成した絶縁基板１０とＥＬ発光素子２
００を形成した絶縁基板２０との間に、絶縁基板２０よ
り屈折率の小さい接着剤を５０μｍの膜厚になるように
塗布して透光層３００を構成し、画素１１ａと光入射窓
２６とが相対応するように接合する。On a transparent insulating substrate 20 formed of a glass plate or the like having a film thickness of 50 μm, ITO, In 2 O 3 ,
A transparent electrode 21 is formed by depositing SnO 2 or the like by a sputtering method or the like, and Y 2 O 3 , Si 3 N 4 , or BaTi is formed on the transparent electrode 21.
An insulating layer 22 is formed by depositing O 3 or the like, and ZnS: Mn or the like is deposited on the insulating layer 22 by a sputtering method or the like to form a strip-shaped light emitting layer 23. Then, a metal such as aluminum is vapor-deposited on the insulating layer 24 and patterned by photolithography to form a metal electrode 25 having a light incident window 26, thereby manufacturing the EL light emitting device 200. Insulating substrate 10 on which light receiving element 100 is formed and EL light emitting element 2
No. 00 is formed on the insulating substrate 20, an adhesive having a refractive index smaller than that of the insulating substrate 20 is applied so as to have a thickness of 50 μm to form the light transmitting layer 300, and the pixel 11a and the light incident window 26 are formed. Join so that they correspond to each other.
【００１５】以上のような画像読取装置において、ＥＬ
発光素子発光のための駆動信号を金属電極２５と透明電
極２１との間に与えれば、これらの両電極で挟まれた部
分の発光層２３が発光し、光入射窓２６の直上部分の発
光層２３は発光しない。発光層２３から上方に放射され
る光は原稿４００を照射し、その反射光が光入射窓２６
から各画素１０１に入射する。この際、上記した実施例
のように、絶縁基板２０より屈折率の小さい媒体で透光
層３００を形成し、絶縁基板２０（屈折率ｎ1）を透光
層３００（屈折率ｎ2 ）に対して光学的に密（ｎ1 ＞ｎ
2 ）に構成すれば、反射光６００の透光層３００に対す
る入射角φ（反射光と境界面の法線との角度）が臨界角
（ｓｉｎ-1 ｎ2／ｎ1）以上で透光層３００に入射しよ
うとする光は透光層３００中に入ることができず境界面
で全部反射する。In the image reading apparatus as described above, the EL
When a drive signal for emitting light from the light emitting element is applied between the metal electrode 25 and the transparent electrode 21, the light emitting layer 23 in the portion sandwiched between these electrodes emits light, and the light emitting layer directly above the light incident window 26. 23 does not emit light. The light emitted upward from the light emitting layer 23 illuminates the original 400, and the reflected light thereof is reflected by the light incident window 26.
Is incident on each pixel 101. At this time, as in the above-described embodiment, the transparent layer 300 is formed of a medium having a smaller refractive index than the insulating substrate 20, and the insulating substrate 20 (refractive index n 1 ) is replaced with the transparent layer 300 (refractive index n 2 ). Optically dense (n 1 > n
2 ), the incident angle φ of the reflected light 600 with respect to the transparent layer 300 (angle between the reflected light and the normal line of the boundary surface) is a critical angle (sin −1 n 2 / n 1 ) or more. The light that is about to enter 300 cannot enter the transparent layer 300 and is totally reflected by the boundary surface.
【００１６】また、入射角φが臨界角より若干小さい反
射光７００についても、画素１０１ａから遠ざかる方向
へ透光層３００で屈折し、画素１０１ａに入射すること
を防止している。また、たとえこの反射光７００が屈折
により他の画素１０１に入射するようになっても、屈折
により透光層３００内での光路長が長くなるので、各画
素１０１に与える光量（光の強度）は弱くなり大きな影
響を与えることがない。Further, the reflected light 700 whose incident angle φ is slightly smaller than the critical angle is also refracted by the translucent layer 300 in the direction away from the pixel 101a and prevented from entering the pixel 101a. Further, even if the reflected light 700 comes into other pixels 101 by refraction, the light path length in the light transmitting layer 300 becomes long due to refraction, so that the light amount (light intensity) given to each pixel 101. Is weak and does not have a major impact.
【００１７】[0017]
【発明の効果】本発明によれば、原稿面で反射した反射
光が光学的に密な媒質から疎な媒質へ入射するように構
成したので、媒質同士の屈折率の比できまる臨界角以上
で透光層に入射しようとする反射光を、透光層の上面で
全反射させ、受光素子側に入射するのを防止し、一画素
が読み取るべき原稿の領域からの反射光のみが前記画素
に入射し、イメ−ジセンサの分解能（ＭＴＦ）の向上を
図ることができる。According to the present invention, since the reflected light reflected by the document surface is made incident from the optically dense medium to the sparse medium, it is equal to or more than the critical angle at which the ratio of the refractive indexes of the media can be made. The reflected light that is about to enter the light-transmitting layer is totally reflected on the upper surface of the light-transmitting layer and is prevented from entering the light-receiving element side, and only the reflected light from the area of the original to be read by one pixel is the pixel. To improve the resolution (MTF) of the image sensor.
【図１】 本発明の一実施例にかかる画像読取装置の断
面説明図である。FIG. 1 is a cross-sectional explanatory diagram of an image reading apparatus according to an embodiment of the present invention.
【図２】 図１の画像読取装置の平面説明図である。FIG. 2 is a plan view of the image reading apparatus shown in FIG.
【図３】 従来の受光素子，発光素子一体型の画像読取
装置の断面説明図である。FIG. 3 is a cross-sectional explanatory view of a conventional image reading device integrated with a light receiving element and a light emitting element.
【符号の説明】 １０…絶縁基板、 ２０…絶縁基板、 １００…受光素
子、 ２００…ＥＬ発光素子、 ３００…透光層、 ４
００…原稿DESCRIPTION OF SYMBOLS 10 ... Insulating substrate, 20 ... Insulating substrate, 100 ... Light receiving element, 200 ... EL light emitting element, 300 ... Translucent layer, 4
00 ... manuscript
Claims (1)
第２の基板上に形成された発光素子とを透光層を挟んで
相対向するように配置し、前記発光素子からの光を前記
第２の基板の反発光素子側に配置した原稿面に照射さ
せ、その反射光が前記受光素子に入射するようにした画
像読取装置において、前記第２の基板より屈折率の小さ
い媒体で前記透光層を形成したことを特徴とする画像読
取装置。1. A light receiving element formed on a first substrate,
The light emitting element formed on the second substrate is arranged so as to face each other with the light transmitting layer interposed therebetween, and the light from the light emitting element is directed to the original surface arranged on the side opposite to the light emitting element of the second substrate. An image reading apparatus in which the reflected light thereof is made incident on the light receiving element, wherein the light transmissive layer is formed of a medium having a refractive index smaller than that of the second substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4352328A JPH0732246B2 (en) | 1992-12-11 | 1992-12-11 | Image reader |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4352328A JPH0732246B2 (en) | 1992-12-11 | 1992-12-11 | Image reader |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0697409A true JPH0697409A (en) | 1994-04-08 |
| JPH0732246B2 JPH0732246B2 (en) | 1995-04-10 |
Family
ID=18423308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4352328A Expired - Fee Related JPH0732246B2 (en) | 1992-12-11 | 1992-12-11 | Image reader |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0732246B2 (en) |
-
1992
- 1992-12-11 JP JP4352328A patent/JPH0732246B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0732246B2 (en) | 1995-04-10 |
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