JPH0699033A - Hazardous gas purification method - Google Patents
Hazardous gas purification methodInfo
- Publication number
- JPH0699033A JPH0699033A JP4254618A JP25461892A JPH0699033A JP H0699033 A JPH0699033 A JP H0699033A JP 4254618 A JP4254618 A JP 4254618A JP 25461892 A JP25461892 A JP 25461892A JP H0699033 A JPH0699033 A JP H0699033A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- nitrogen
- purifying
- harmful
- calcium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Treating Waste Gases (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は有害ガスの浄化方法に関
し、さらに詳細には三弗化窒素など半導体製造工程で使
用される窒素弗化物の浄化方法に関する。近年、三弗化
窒素はシリコンやシリコン酸化物などのドライエッチン
グに使用されたり、CVD装置のチャンバークリーニン
グ用ガスとして使用されるなど半導体工業の発展ととも
にその使用量が増加している。このガスは水に対する溶
解度は小さく、酸やアルカリともほとんど反応しないな
ど室温ではかなり安定であるが、許容濃度は10ppm
と報告されており、毒性が高く、人体および環境に悪影
響を与えるので、三弗化窒素を含むガスは半導体製造工
程などに使用後大気に放出するに先立って有害成分を除
去する必要がある。また、三弗化窒素は常温では安定で
あるが、エッチングやクリーニング工程中に熱、放電等
により、四弗化二窒素、二弗化二窒素、六弗化二窒素な
どの窒素弗化物を生成し、これらは三弗化窒素よりも毒
性が強いため三弗化窒素と同様に除去しなければならな
い。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for purifying harmful gases, and more particularly to a method for purifying nitrogen fluoride such as nitrogen trifluoride used in a semiconductor manufacturing process. In recent years, nitrogen trifluoride has been used in dry etching of silicon, silicon oxide and the like, and is also used as a chamber cleaning gas for a CVD apparatus, and the amount thereof is increasing with the development of the semiconductor industry. This gas has a low solubility in water and is fairly stable at room temperature, such as hardly reacting with acids and alkalis, but its permissible concentration is 10 ppm.
Since it is reported that it is highly toxic and adversely affects the human body and the environment, it is necessary to remove harmful components from the gas containing nitrogen trifluoride before it is released into the atmosphere after being used in a semiconductor manufacturing process. Further, although nitrogen trifluoride is stable at room temperature, it produces nitrogen fluorides such as dinitrogen tetrafluoride, dinitrogen difluoride, and dinitrogen hexafluoride due to heat and discharge during the etching and cleaning processes. However, since they are more toxic than nitrogen trifluoride, they must be removed similarly to nitrogen trifluoride.
【0002】[0002]
【従来の技術】ガス中に含有される窒素弗化物を除去す
る方法として、従来より提案されているのは、(1)1
00℃以上の温度で金属シリコンと接触させる方法(特
開昭63−12322)、(2)200℃以上の温度で
金属チタンと接触させる方法(特公昭63−4857
1)、(3)Si、B、W、Mo、V、Se、Te、G
eおよびこれらの非酸化物系化合物と200〜800℃
で接触させる方法(特公昭63−48570)、(4)
三弗化窒素とハロゲン交換し得る金属ハロゲン化物と接
触させる方法(特公昭63−48569)、(5)遷移
金属の酸化物と250℃以上の温度で接触させる方法
(特開平3−181316)、(6)活性炭と300〜
600℃で接触させる方法(特開昭62−23792
9)などが提案されている。2. Description of the Related Art As a method for removing nitrogen fluoride contained in a gas, (1) 1 has been proposed so far.
Method of contacting with metallic silicon at a temperature of 00 ° C or higher (JP-A-63-12322), (2) Method of contacting with metallic titanium at a temperature of 200 ° C or higher (Japanese Patent Publication No. 63-4857).
1), (3) Si, B, W, Mo, V, Se, Te, G
e and these non-oxide compounds and 200 to 800 ° C.
Contact method (Japanese Patent Publication No. 63-48570), (4)
A method of contacting nitrogen trifluoride with a metal halide capable of halogen exchange (Japanese Patent Publication No. 63-48569), (5) a method of contacting with an oxide of a transition metal at a temperature of 250 ° C. or higher (JP-A-3-181316), (6) Activated carbon and 300-
Method of contacting at 600 ° C. (JP-A-62-23792)
9) etc. have been proposed.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、上記の
(1)、(2)、(3)の方法に関しては揮発性の弗化
物が、(4)の方法では塩素などハロゲンが、(5)の
方法では窒素酸化物がそれぞれ発生し、それらの処理に
コストがかかるという問題があり、(6)の方法は反応
が激しく、また、高温下で行われるため爆発の危険を伴
うことや、比較的安定で除去が難しい四弗化炭素が副生
するという問題がある。However, in the above methods (1), (2), and (3), volatile fluorides, in the method (4), halogens such as chlorine, and (5) are used. In the method, there is a problem that nitrogen oxides are generated respectively, and it is costly to treat them. In the method (6), the reaction is vigorous, and since it is performed at high temperature, there is a risk of explosion, There is a problem that carbon tetrafluoride, which is stable and difficult to remove, is by-produced.
【0004】[0004]
【課題を解決するための手段】本発明者らは、これらの
問題点を解決するべく鋭意検討を重ねた結果、カルシウ
ムまたはマグネシウムを含有する浄化剤を用いることに
よって、窒素弗化物を極めて効率よく除去しうるととも
に環境に悪影響を及ぼす物質を副生しないことを見い出
し本発明を完成した。すなわち本発明は、有害成分とな
る窒素弗化物を含有するガスを、カルシウムおよび/ま
たはマグネシウムと接触させて、該有害成分を除去する
ことを特徴とする有害ガスの浄化方法である。本発明は
空気、窒素および水素中などに含有される三弗化窒素、
四弗化二窒素など窒素弗化物を効率よく除去することが
できる。The inventors of the present invention have conducted extensive studies to solve these problems, and as a result, by using a purifying agent containing calcium or magnesium, nitrogen fluoride can be extremely efficiently produced. The present invention has been completed by finding that it can be removed and does not produce a substance that adversely affects the environment. That is, the present invention is a method for purifying harmful gas, which comprises contacting a gas containing nitrogen fluoride, which is a harmful component, with calcium and / or magnesium to remove the harmful component. The present invention relates to nitrogen trifluoride contained in air, nitrogen and hydrogen,
Nitrogen fluoride such as dinitrogen tetrafluoride can be efficiently removed.
【0005】本発明において使用される浄化剤は金属カ
ルシウムまたは金属マグネシウムなどであり、通常は市
販品でよく、容易に入手することができる。これらの金
属は通常は、粒状や10メッシュ程度の小粒状として、
または、100メッシュ程度の微細粒としたものをペレ
ット状に成型した形態で浄化剤として使用される。The purifying agent used in the present invention is metal calcium, metal magnesium or the like, which is usually a commercial product and can be easily obtained. These metals are usually in the form of particles or small particles of about 10 mesh,
Alternatively, it is used as a purifying agent in the form of pellets formed of fine particles of about 100 mesh.
【0006】本発明において浄化剤は固定床として用い
られる他、移動床、流動床として用いることも可能であ
る。通常は浄化剤は浄化筒内に充填され窒素弗化物を含
有するガスはこの浄化筒内に流され、浄化剤と接触させ
ることにより、有害成分である窒素弗化物が除去され、
被処理ガスは浄化される。In the present invention, the purifying agent can be used not only as a fixed bed but also as a moving bed or a fluidized bed. Normally, the purifying agent is filled in the purifying cylinder, and the gas containing nitrogen fluoride is caused to flow in the purifying cylinder, and by contacting the purifying agent, the nitrogen fluoride which is a harmful component is removed,
The gas to be treated is purified.
【0007】本発明の浄化方法が適用される被処理ガス
の流速に制限はないが一般に被処理ガス中に含有される
窒素弗化物の濃度が高いほど流速を小さくすることが望
ましい。浄化筒は有害ガス濃度、処理対象ガスの量など
に応じて設計されるが、有害ガス濃度が1000ppm
以下の場合には20cm/sec以下であり、それ以上
の濃度の場合は5cm/sec以下の範囲で設計するこ
とが望ましい。There is no limitation on the flow rate of the gas to be treated to which the purification method of the present invention is applied, but it is generally desirable to reduce the flow rate as the concentration of nitrogen fluoride contained in the gas to be treated is higher. The purification column is designed according to the harmful gas concentration, the amount of gas to be treated, etc., but the harmful gas concentration is 1000 ppm
In the case of the following, it is desirable to design in the range of 20 cm / sec or less, and in the case of the concentration of more than that, it is desirable to design in the range of 5 cm / sec or less.
【0008】接触温度は、通常はカルシウムおよびマグ
ネシウムの融点(839℃および649℃)よりも低い
温度とされるが、金属の焼結を防止するなどの目的から
はそれぞれの融点より少なくとも50℃低い温度でおこ
なうことが好ましい。これらの温度は有害成分の濃度な
どに応じて適宜選択され、例えば、窒素弗化物濃度が1
000ppm以下の場合には室温〜300℃、好ましく
は100〜300℃であり、濃度がさらに高い場合には
200〜500℃程度とされる。接触時の圧力は通常は
常圧であるが、減圧乃至1kg/cm2 のような加圧下
で操作することも可能である。浄化筒内の浄化剤の充填
長はガスの流量および有害ガスの濃度などによって異な
り一概に特定はできないが、実用上通常は、50〜50
0mm程度とされ、浄化筒の内径は筒内を流れるガスの
空筒線速度(LV)が5〜20cm/sec程度となる
大きさに設計される。一般的にはこれらは充填層の圧力
損失、ガスの接触効率および有害ガスの濃度などによっ
て定められる。The contact temperature is usually lower than the melting points of calcium and magnesium (839 ° C. and 649 ° C.), but at least 50 ° C. lower than the respective melting points for the purpose of preventing metal sintering. It is preferable to carry out at temperature. These temperatures are appropriately selected according to the concentration of harmful components, for example, the concentration of nitrogen fluoride is 1
When the concentration is 000 ppm or less, the temperature is from room temperature to 300 ° C, preferably from 100 to 300 ° C, and when the concentration is higher, the temperature is from about 200 to 500 ° C. The pressure at the time of contact is usually normal pressure, but it is also possible to operate under reduced pressure or increased pressure such as 1 kg / cm 2 . The filling length of the purifying agent in the purifying cylinder varies depending on the flow rate of gas and the concentration of harmful gas and cannot be specified unconditionally, but in practice, it is usually 50 to 50.
The inside diameter of the purifying cylinder is designed to be about 0 mm and the empty cylinder linear velocity (LV) of the gas flowing in the cylinder is about 5 to 20 cm / sec. Generally, these are determined by the pressure loss of the packed bed, the gas contact efficiency, the concentration of harmful gas, and the like.
【0009】[0009]
実施例1 市販の粒状カルシウム(純度99%)を振るい分けて得
た6〜12メッシュの浄化剤84.9mlを内径19m
m、長さ400mmの石英製の浄化筒に充填しこれに三
弗化窒素を1%含有するヘリウムを400℃、常圧下で
424.5ml/min(空筒線速度LV=2.5cm
/sec)の流量で流通させ、浄化筒の出口ガスをガス
クロマトグラフ法(検出下限10ppm)により分析し
た。その結果、三弗化窒素は検出されず、さらに10時
間流通させたが破過は認められ無かった。また、副生物
の生成も認められなかった。Example 1 84.9 ml of a 6 to 12 mesh purifying agent obtained by sieving commercially available granular calcium (purity 99%) was used to obtain an inner diameter of 19 m.
m, 400 mm long quartz purifying cylinder filled with helium containing 1% nitrogen trifluoride at 400 ° C. under atmospheric pressure 424.5 ml / min (vacuum linear velocity LV = 2.5 cm)
/ Sec), and the outlet gas of the purification column was analyzed by gas chromatography (lower limit of detection: 10 ppm). As a result, nitrogen trifluoride was not detected, and it was allowed to flow for 10 hours, but no breakthrough was observed. In addition, generation of by-products was not observed.
【0010】[0010]
実施例2 市販の切削片状マグネシウム(純度97%以上)を実施
例1で使用した浄化筒に84.9ml充填し、これに三
弗化窒素を5000ppm含有する窒素を250℃、常
圧下424.5ml/min(空筒線速度LV=2.5
cm/sec)で流通させ、浄化筒の出口ガスをガスク
ロマトグラフ法により分析した。その結果、三弗化窒素
は検出されず、さらに15時間流通させたが、破過は認
められなかった。また、副生物の生成も認められなかっ
た。Example 2 84.9 ml of the purifying cylinder used in Example 1 was filled with commercially available magnesium flakes (purity 97% or more), and nitrogen containing 5000 ppm of nitrogen trifluoride was added thereto at 250 ° C. under normal pressure of 424. 5 ml / min (Cylindrical linear velocity LV = 2.5
cm / sec), and the outlet gas of the purification column was analyzed by gas chromatography. As a result, nitrogen trifluoride was not detected, and it was allowed to flow for 15 hours, but no breakthrough was observed. In addition, generation of by-products was not observed.
【0011】[0011]
【発明の効果】本発明のガスの浄化方法によれば、ガス
中に含有される窒素弗化物を効率よく除去することがで
きるとともに有害な副生物を生ずることがなく、半導体
製造工程などの排出ガスの浄化に優れた効果が得られ
る。According to the method for purifying gas of the present invention, nitrogen fluoride contained in the gas can be efficiently removed and harmful by-products are not generated, and the gas can be discharged in the semiconductor manufacturing process or the like. An excellent effect for gas purification can be obtained.
Claims (2)
を、カルシウムおよび/またはマグネシウムと接触させ
て、該有害成分を除去することを特徴とする有害ガスの
浄化方法。1. A method of purifying a harmful gas, which comprises contacting a gas containing nitrogen fluoride, which is a harmful component, with calcium and / or magnesium to remove the harmful component.
二弗化二窒素、六弗化二窒素から選ばれる1種または2
種以上である請求項1に記載の浄化方法。2. Nitrogen fluoride is nitrogen trifluoride, dinitrogen tetrafluoride,
One or two selected from dinitrogen difluoride and dinitrogen hexafluoride
The purification method according to claim 1, wherein the purification method is one or more kinds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4254618A JPH0699033A (en) | 1992-09-24 | 1992-09-24 | Hazardous gas purification method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4254618A JPH0699033A (en) | 1992-09-24 | 1992-09-24 | Hazardous gas purification method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0699033A true JPH0699033A (en) | 1994-04-12 |
Family
ID=17267540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4254618A Pending JPH0699033A (en) | 1992-09-24 | 1992-09-24 | Hazardous gas purification method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0699033A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6106790A (en) * | 1997-08-18 | 2000-08-22 | Air Products And Chemicals, Inc. | Abatement of NF3 using small particle fluidized bed |
| JP2007021447A (en) * | 2005-07-21 | 2007-02-01 | Taiyo Nippon Sanso Corp | Gas use equipment and exhaust gas separation method |
-
1992
- 1992-09-24 JP JP4254618A patent/JPH0699033A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6106790A (en) * | 1997-08-18 | 2000-08-22 | Air Products And Chemicals, Inc. | Abatement of NF3 using small particle fluidized bed |
| JP2007021447A (en) * | 2005-07-21 | 2007-02-01 | Taiyo Nippon Sanso Corp | Gas use equipment and exhaust gas separation method |
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