JPH07101524B2 - Magneto-optical information reproducing device - Google Patents
Magneto-optical information reproducing deviceInfo
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- JPH07101524B2 JPH07101524B2 JP61246617A JP24661786A JPH07101524B2 JP H07101524 B2 JPH07101524 B2 JP H07101524B2 JP 61246617 A JP61246617 A JP 61246617A JP 24661786 A JP24661786 A JP 24661786A JP H07101524 B2 JPH07101524 B2 JP H07101524B2
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- magneto
- optical
- recording medium
- light
- polarization
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Description
【発明の詳細な説明】 〔技術分野〕 本発明は、磁気光学効果を利用して記録媒体に磁気的に
記録された情報を再生する光磁気情報再生装置に関す
る。Description: TECHNICAL FIELD The present invention relates to a magneto-optical information reproducing apparatus for reproducing information magnetically recorded on a recording medium by utilizing a magneto-optical effect.
近年、半導体レーザ光により記録再生を行なう光メモリ
は、光密度記録メモリとして実用化への研究開発が盛ん
である。この内、既に製品化されたコンパクトデイスク
等に代表される再生専用光デイスクやDRAWタイプ光デイ
スクとともに、特に消去・書き換えが可能な光磁気デイ
スクが有望視されてきている。光磁気デイスクは、レー
ザスポツト照射による磁性薄膜の局所的温度上昇を利用
して磁気的に情報を記録し、磁気光学効果(特にカー効
果)により情報を再生するものである。ここでカー効果
とは、光が磁気記録媒体によって反射された場合に、偏
光面が回転する現象をさす。2. Description of the Related Art In recent years, an optical memory for recording / reproducing with a semiconductor laser beam has been actively researched and developed for practical use as an optical density recording memory. Among them, magneto-optical disks that can be erased and rewritten are particularly promising, as well as read-only optical disks and DRAW-type optical disks, which are typified by already commercialized compact disks. The magneto-optical disk magnetically records information by utilizing the local temperature rise of a magnetic thin film due to laser spot irradiation, and reproduces information by a magneto-optical effect (especially Kerr effect). Here, the Kerr effect refers to a phenomenon in which a plane of polarization rotates when light is reflected by a magnetic recording medium.
従来の光磁気デイスク装置の基本的構成を第9図に示
す。第9図においては、1は半導体レーザー、2はコリ
メータレンズ、11はハーフミラー、4は対物レンズ、6
は光磁気記録媒体、7は検光子、8は集光レンズ、9は
光検出器で、P偏光方向は紙面に平行、S偏光方向は垂
直である。FIG. 9 shows the basic structure of a conventional magneto-optical disk device. In FIG. 9, 1 is a semiconductor laser, 2 is a collimator lens, 11 is a half mirror, 4 is an objective lens, 6
Is a magneto-optical recording medium, 7 is an analyzer, 8 is a condenser lens, and 9 is a photodetector. The P polarization direction is parallel to the paper surface and the S polarization direction is perpendicular.
次に、上記装置において、光磁気情報を再生する場合に
ついて説明する。半導体レーザ1からP偏光方向の直線
偏光として射出された光束は、コリメータレンズ2によ
り平行光束とされ、ハーフミラー11を通過する。P偏光
成分振幅透過率をtP、S偏光成分振幅透過率をtSとすれ
ば、11においては|tP|2=|tS|2=0.5である。光束は、
対物レンズ4により、光磁気記録媒体6上に微小なスポ
ツトとして結像される。媒体6上にあらかじめ磁区(ピ
ツト)が形成されている場合には、第10図に示す様に媒
体6からの反射光は、カー効果によりスポツト照射領域
の磁化方向(上向きか又は下向きか)に応じて、各々±
θKの偏光面の回転を受ける。ここで、記録媒体6の振
幅反射率のP偏光成分をR、S偏光成分をKとすれば、
次式が成り立つ。Next, a case of reproducing magneto-optical information in the above device will be described. The light beam emitted from the semiconductor laser 1 as linearly polarized light in the P polarization direction is collimated by the collimator lens 2 and passes through the half mirror 11. Assuming that the P-polarized component amplitude transmittance is t P and the S-polarized component amplitude transmittance is t S , then | t P | 2 = | t S | 2 = 0.5 in 11. The luminous flux is
An image is formed as a minute spot on the magneto-optical recording medium 6 by the objective lens 4. When magnetic domains (pits) are formed on the medium 6 in advance, the reflected light from the medium 6 is directed in the magnetization direction (upward or downward) of the spot irradiation region by the Kerr effect as shown in FIG. Depending on each ±
It undergoes rotation of the polarization plane of θ K. Here, if the P-polarized component of the amplitude reflectance of the recording medium 6 is R and the S-polarized component is K,
The following equation holds.
光磁気変調された反射光は、対物レンズ4で再び平行光
束とされ、ハーフミラー11で反射された後、検光子7で
強度変調された光束に変換される。即ち、第10図におい
て反射光束は、その振幅の検光子光学軸への正射影とし
て検光されるので、光磁気媒体への入射光強度を10、検
光子の光学軸のP偏光方向からの角度をθAとすれば、
カー回転角±θKに応じて、検光子の透過した光束の強
度I+ θ K,I- θ Kは各々、(2)式のようにあらわせる。 The reflected light subjected to the magneto-optical modulation is made into a parallel light flux again by the objective lens 4, reflected by the half mirror 11, and then converted into a light flux whose intensity is modulated by the analyzer 7. That is, the reflected light beam in FIG. 10, since the light detecting a orthogonal projection to the analyzer optical axis of the amplitude, the incident light intensity on the magneto-optical medium 1 0, from P polarization direction of the optical axis of the analyzer Let θ A be the angle of
Depending on the Kerr rotation angle ± theta K, the intensity of the transmitted light beam of the analyzer I + θ K, I - θ K are each expressed as equation (2).
θK≒1゜であるから、|R|2≫|K|2が成り立つので、
(2)式は、 とあらわせる。(3)式の括弧内第2項が光磁気変調成
分、第1項が非変調成分である。このように強度変調に
変換された光束は、集光レンズ8を経て、光検出器9に
より光磁気信号として検出される。 Since θ K ≈1 °, | R | 2 >> | K | 2 holds,
Equation (2) is Express. The second term in the parentheses of the equation (3) is the magneto-optical modulation component, and the first term is the non-modulation component. The luminous flux converted into the intensity modulation in this way passes through the condenser lens 8 and is detected by the photodetector 9 as a magneto-optical signal.
しかしながらこのような、従来の偏光特性を持たないハ
ーフミラー11を用いた光学系では、以下の様な欠点があ
った。However, such an optical system using the conventional half mirror 11 having no polarization characteristic has the following drawbacks.
1)カー回転角θKは1゜程度であり、これによる光磁
気変調成分は非常に微小な量であるので、偏光特性を持
たないハーフミラーを通過することにより、光磁気変調
成分の光量が半分以上損なわれ、検出信号のC/N(搬送
波と雑音との比)が低下する。1) The Kerr rotation angle θ K is about 1 °, and the magneto-optical modulation component due to this is a very small amount. Therefore, the light amount of the magneto-optical modulation component passes through a half mirror having no polarization characteristic. More than half is lost and the C / N (carrier to noise ratio) of the detected signal is reduced.
2)C/Nが低いため、従来の装置は光磁気信号の検出に
複雑な検出系、例えば差動検出や増幅作用をもつ光検出
器(アバランシフオトダイオードなど)を用いた検出を
行なわなければならず、コスト面及び信頼性で不利であ
る。2) Since the C / N is low, the conventional device must perform detection using a complicated detection system for detecting the magneto-optical signal, such as a differential detection or a photodetector having an amplifying action (avalanche photodiode, etc.). It is disadvantageous in terms of cost and reliability.
本発明の目的は、上記従来技術の欠点を改良し、ピンフ
オトダイオードなどの増幅作用のない安価な光検出器を
用いて、簡単な構成でC/Nの良好な光磁気信号の再生が
可能な光磁気情報再生装置を提供することにある。The object of the present invention is to improve the above-mentioned drawbacks of the prior art, and to reproduce a magneto-optical signal having a good C / N with a simple configuration by using an inexpensive photodetector that does not have an amplifying action such as a pin photodiode. Another object is to provide a simple magneto-optical information reproducing device.
本発明の上記目的は、光磁気情報再生装置を、所定の方
向に偏光した光束を磁気的に情報が記録された記録媒体
上に照射する手段と、磁気光学効果により前記情報に応
じて偏光状態に変調を受けた前記記録媒体からの反射又
は透過光束を、その偏光成分に応じた所定の割合で反射
および透過する偏光ビームスプリツタと、前記偏光ビー
ムスプリツタからの光束を光電検出する増幅作用のない
光検出器と、前記光検出器の検出信号を増幅し前記情報
を再生する増幅手段とから構成し、前記偏光ビームスプ
リツタの偏光反射率−透過率特性を以下の式を満足する
ように設定することによって達成される。即ち、光検出
器が偏光ビームスプリツタの反射光を検出する場合、 又、光検出器が偏光ビームスプリツタの透過光を検出す
る場合、 である。但し、ここで前記偏光ビームスプリツタの前記
所定方向の偏光成分に対する振幅反射率及び振幅透過率
を各々rP,tS、前記所定方向と垂直方向の偏光成分に対
する振幅反射率及び振幅透過率を各々rS,tP前記光検出
器に入射する磁気光学効果により変調を受けない偏光成
分強度の平均をIR、光磁気信号観測周波数におけるこの
強度ゆらぎの2乗平均を 前記記録媒体上における入射光束の光量をI0、前記記録
媒体の振幅反射率をR、前記偏光ビームスプリツタを除
く記録媒体より光検出器に至る光学系の光利用効率を
ε、前記光検出器の光電変換効率をκ、光磁気信号観測
周波数における前記増幅手段の熱雑音をT、検出信号の
バンド幅を△Bとした。The above object of the present invention is to provide a magneto-optical information reproducing device with means for irradiating a recording medium on which information is magnetically recorded with a light beam polarized in a predetermined direction, and a polarization state according to the information by a magneto-optical effect. A polarized beam splitter that reflects or transmits a reflected or transmitted light beam from the recording medium that has been modulated to a predetermined ratio according to its polarization component, and an amplifying action for photoelectrically detecting the light beam from the polarized beam splitter. A photodetector without a detector and an amplifying means for amplifying a detection signal of the photodetector and reproducing the information, so that the polarized light reflectance-transmittance characteristic of the polarized beam splitter satisfies the following expression. It is achieved by setting to. That is, when the photodetector detects the reflected light of the polarized beam splitter, Also, when the photodetector detects the transmitted light of the polarized beam splitter, Is. However, here, the amplitude reflectance and the amplitude transmittance for the polarization component in the predetermined direction of the polarization beam splitter are respectively r P and t S , and the amplitude reflectance and the amplitude transmittance for the polarization component in the predetermined direction and the vertical direction are Each of r S and t P is the average of the polarization component intensities that are not modulated by the magneto-optical effect incident on the photodetector, and I R is the mean square of this intensity fluctuation at the magneto-optical signal observation frequency. The light quantity of the incident light flux on the recording medium is I 0 , the amplitude reflectance of the recording medium is R, the light utilization efficiency of the optical system from the recording medium excluding the polarization beam splitter to the photodetector is ε, and the light detection is performed. The photoelectric conversion efficiency of the device is κ, the thermal noise of the amplification means at the magneto-optical signal observation frequency is T, and the bandwidth of the detection signal is ΔB.
以下、本発明の図面を用いて詳細に説明する。 Hereinafter, a detailed description will be given with reference to the drawings of the present invention.
第1図及び第2図は、本発明に基づく光磁気情報再生装
置の第1実施例を示し、夫々第1図は光学系の概略構成
図、第2図は信号処理回路の概略構成図である。第1図
において、21は半導体レーザ、22はコリメータレンズ、
12は偏光ビームスプリツタ、24は対物レンズ、26は光磁
気記録媒体、27は検光子、28は集光レンズ、29はピンフ
オトダイオード等の増幅作用のない光検出器で、P偏光
方向は紙面に平行、S偏光方向は垂直である。また13は
検光子27を透過した光束を示し、この検出光束13は第2
図のように光検出器29で光電変換され、負荷抵抗16を含
む増幅器15によって電圧増幅されて、端子14より再生信
号として出力される。1 and 2 show a first embodiment of a magneto-optical information reproducing apparatus according to the present invention. FIG. 1 is a schematic configuration diagram of an optical system, and FIG. 2 is a schematic configuration diagram of a signal processing circuit. is there. In FIG. 1, 21 is a semiconductor laser, 22 is a collimator lens,
12 is a polarized beam splitter, 24 is an objective lens, 26 is a magneto-optical recording medium, 27 is an analyzer, 28 is a condenser lens, 29 is a photodetector with no amplification function such as a pin photodiode, and the P polarization direction is It is parallel to the paper surface and the S polarization direction is vertical. Reference numeral 13 denotes a light beam that has passed through the analyzer 27, and this detected light beam 13 is the second light beam.
As shown in the figure, it is photoelectrically converted by the photodetector 29, voltage-amplified by the amplifier 15 including the load resistor 16, and output from the terminal 14 as a reproduction signal.
上記装置において、半導体レーザ21はP偏光光束を出射
する。この出射光束は、コリメータレンズ22で平行光と
なり、偏光ビームスプリツタを透過して、対物レンズ24
によって記録媒体26上に強度IOの光スポツトとして照射
される。そして、記録媒体26で反射された光束は、該記
録媒体26に磁気的に記録された情報に応じて偏光状態に
変調を受け、再び対物レンズ24を通って偏光ビームスプ
リツタ12で反射し、検光子27に導かれる。検光子27を通
過した検出光13は強度変調され、集光レンズ28を介して
光検出器29で受光される。ここで、前記偏光ビームスプ
リツタのP偏光及びS偏光の振幅透過率を各々tP,tS、
振幅反射率を各々rP,rSとすると、前記検出光13の強度
は、以下の(4)式で表せる。In the above device, the semiconductor laser 21 emits a P-polarized light flux. This emitted light beam is collimated by the collimator lens 22, passes through the polarized beam splitter, and then passes through the objective lens 24.
The light is irradiated onto the recording medium 26 as an optical spot having an intensity I O. Then, the light flux reflected by the recording medium 26 is modulated into a polarized state in accordance with the information magnetically recorded on the recording medium 26, passes through the objective lens 24 again, and is reflected by the polarized beam splitter 12. Guided by analyzer 27. The detection light 13 that has passed through the analyzer 27 is intensity-modulated and is received by the photodetector 29 via the condenser lens 28. Here, the amplitude transmittances of the P-polarized light and the S-polarized light of the polarized beam splitter are respectively t P , t S ,
Assuming that the amplitude reflectances are r P and r S , the intensity of the detection light 13 can be expressed by the following equation (4).
|R|2≫|K|2であることを考慮して(4)式は とあらわせる。 Considering that | R | 2 >> | K | 2 , equation (4) is Express.
(5)式は括弧内第2項が光磁気変調成分、第1項が変
調成分であり、各々の強度をIK,IRとおくことにする。In the equation (5), the second term in the parentheses is the magneto-optical modulation component, the first term is the modulation component, and the respective intensities are I K and I R.
IR≒IO|R|2|rP|cos3θA (7) なお、入射光I0は所定の光量となる様に偏光ビームスプ
リツタの振幅透過率tP,tsにかかわらず、半導体レーザ
の出力を調節するものとする。 I R ≈I O | R | 2 | r P | cos 3 θ A (7) Note that the incident light I 0 has a predetermined light intensity regardless of the amplitude transmittances t P and t s of the polarized beam splitter. The output of the semiconductor laser shall be adjusted.
このように強度変調された光束は、第2図に示す光検出
器29で光電流に変換される。光電変換効率κは、eを電
荷量、hをプランク定数、ρを光検出器の量子効率、ν
を光束の振動数として次式で与えられる。The light beam thus intensity-modulated is converted into a photocurrent by the photodetector 29 shown in FIG. The photoelectric conversion efficiency κ is the charge amount of e, the Planck constant of h, the quantum efficiency of the photodetector, ν
Is given by the following equation, where is the frequency of the luminous flux.
ここで、信号読み出しにおける雑音源として次の4種の
雑音が考えられる。 Here, the following four types of noise can be considered as noise sources in signal reading.
1)非変調成分光IRの2乗平均がゆらぎ△I2 Rに起因す
る。1) the mean square of the non-modulated component light I R is due to the fluctuation △ I 2 R.
2)変調成分光IKの2乗平均強度ゆらぎ△I2 Kに起因す
る雑音。2) noise due to the square mean intensity fluctuation △ I 2 K of the modulated component light I K.
3)光検出器のシヨツト雑音。3) Shot noise of the photodetector.
4)増幅器による熱雑音。4) Thermal noise due to the amplifier.
1)の△I2 Rによる雑音及び、2)の△I2 Kによる雑音
は、記録媒体の表面粗さや不均質性、半導体レーザの強
度変動等により生じ、媒体や半導体レーザなどの雑音厳
によって決まる定数を各々ξ,ζ、非変調成分、変調成
分の実効値の平均を各々R,Kとすれば次式が成り立
つ。The noise caused by ΔI 2 R in 1) and the noise caused by ΔI 2 K in 2) are caused by the surface roughness and inhomogeneity of the recording medium, the fluctuation of the semiconductor laser intensity, etc. If the constants to be determined are ξ and ζ, and the averages of the effective values of the non-modulated component and the modulated component are R and K , respectively, the following equation holds.
但し、△Bは検出信号のバンド幅である。 However, ΔB is the bandwidth of the detection signal.
△I2 Rに起因する雑音、△I2 Kに起因する雑音、シヨツト
雑音、熱雑音を各々FR,FK,S,Tとすれば次式であらわせ
る。If the noise due to ΔI 2 R , the noise due to ΔI 2 K , the shot noise, and the thermal noise are F R , F K , S, and T, they can be expressed by the following equations.
S=2eκR△B (13) 但しkはボルツマン定数、Teは等価雑音温度、Rfは負荷
抵抗16の抵抗値である。 S = 2eκ R △ B (13) Here, k is the Boltzmann constant, Te is the equivalent noise temperature, and Rf is the resistance value of the load resistor 16.
これらを用いてC/Nをデシベル表示であらわせば、次式
の様になる。If these are used to express C / N in decibels, the following equation is obtained.
(15)式のC/Nは偏光ビームスプリツタ12の振幅反射率r
P,rsの関数となるので、(15)を各々|rP|,|rS|で偏微
分して極大値を求めてやればよい。|rP|2に関して極値
を求めれば次の様になる。 C / N in equation (15) is the amplitude reflectance r of the polarized beam splitter 12.
Since it is a function of P , r s , (15) can be partially differentiated with | r P |, | r S | to obtain the maximum value. The extreme value for | r P | 2 is as follows.
0|rP|21 (21) |rS|2に関して極値を求めれば次の様になる。 The extreme values of 0 | r P | 2 1 (21) | r S | 2 are as follows.
∂(C/N)/∂(|rs|2)>0となり |rS|2=1 (18) 即ち、(16),(17),(18)を満足するような偏光特
性を有した偏光ビームスリツタを用いればC/Nを最大値
とすることができる。∂ (C / N) / ∂ (| r s | 2 )> 0 and | r S | 2 = 1 (18) That is, it has polarization characteristics that satisfy (16), (17), and (18). The C / N can be maximized by using the polarized beam splitter described above.
第3図は、本発明の第2実施例を示す光学系の概略構成
図である。本実施例は、前述の1実施例を偏光ビームス
プリツタ12の透過光束を検出するように変形したもの
で、第3図において第1図と同一の部材には同一の符号
を付し、詳細な説明は省略する。また信号処理回路は第
2図に示すものと同様のものを用いることが出来る。FIG. 3 is a schematic configuration diagram of an optical system showing a second embodiment of the present invention. This embodiment is a modification of the above-described one embodiment so as to detect the transmitted light flux of the polarized beam splitter 12. In FIG. 3, the same members as those in FIG. Detailed description is omitted. Further, the same signal processing circuit as that shown in FIG. 2 can be used.
本実施例の場合は、半導体レーザ21の偏光方向を、紙面
に垂直なS偏光方向とし、第1の説明文中で使用したP,
S偏光方向を各々置きかえて考えれば良い。但し、
(4)〜(7)式においてはrPをtS,rSをtPと置き変え
る必要がある。即ち、 IR≒IO|R|2|tS|2cosθA (20) (15)式のC/Nは偏光ビームスプリツタの振幅透過率tS,
tPの関数となるので(15)を各々|tS|2,|tP|2で偏微分
して極大値を求めてやればよい。|tS|2に関して極値を
求めれば次の様になる 0|tS|21 (22) |tp|2に関しては極値を求めれば次の様になる。In the case of this embodiment, the polarization direction of the semiconductor laser 21 is the S polarization direction perpendicular to the paper surface, and P, which is used in the first description,
It may be considered by replacing the S polarization directions with each other. However,
In the expressions (4) to (7), it is necessary to replace r P with t S and r S with t P. That is, I R ≈I O | R | 2 | t S | 2 cos θ A (20) C / N in Eq. (15) is the amplitude transmittance t S , of the polarized beam splitter.
Since it is a function of t P , (15) can be partially differentiated by | t S | 2 and | t P | 2 to find the maximum value. The extreme value of | t S | 2 is For 0 | t S | 2 1 (22) | t p | 2 , the extreme values are as follows.
∂(C/N)/∂(|tp|2)>0 |tp|2=1 (23) (21),(22),(23)を満足するような偏光特性を有
した偏光ビームスプリツタを用いればC/Nを最大値とす
ることができる。∂ (C / N) / ∂ (| t p | 2 )> 0 | t p | 2 = 1 (23) (21), (22), (23) C / N can be maximized by using a printer.
第4図は、本発明の第3実施例を示す概略図である。第
4図において第1図と同一の部材には同一の符号を付
し、詳細な説明は省略する。本実施例においても、光検
出器29以後の信号処理系は第2図の如く構成される。FIG. 4 is a schematic diagram showing a third embodiment of the present invention. 4, the same members as those in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted. Also in this embodiment, the signal processing system after the photodetector 29 is constructed as shown in FIG.
本実施例では、第1実施例の偏光ビームスプリツタ12の
代わりに、ビーム整形機能を有する偏光ビームスプリツ
タ23を用いたものである。これにより、楕円形の遠視野
像をもつ半導体レーザ21の光束を、記録媒体26上に効率
良く円形スポツトとして結像することができる。また、
面aは光検出器29に迷光が入射しない様に所定の角度傾
けてある。In this embodiment, a polarized beam splitter 23 having a beam shaping function is used instead of the polarized beam splitter 12 of the first embodiment. As a result, the light flux of the semiconductor laser 21 having an elliptical far-field pattern can be efficiently formed as a circular spot on the recording medium 26. Also,
The surface a is inclined by a predetermined angle so that stray light does not enter the photodetector 29.
記録媒体26上にはトラツキング用の溝(不図示)が紙面
垂直方向に形成されており、対物レンズ24により記録媒
体26上に集光された光束は、この溝により回折される。
25は、トラツクずれによって生ずる±1次回折光のアン
バランスを検出するための光検出器であり、対物レンズ
24の開口周縁に固定されている。このため対物レンズ24
がトラツク溝と垂直方向に移動しても、トラツキングエ
ラー信号にオフセツトを生じない利点がある。A groove (not shown) for tracking is formed on the recording medium 26 in the direction perpendicular to the paper surface, and the light beam focused on the recording medium 26 by the objective lens 24 is diffracted by this groove.
Reference numeral 25 is a photodetector for detecting the imbalance of ± first-order diffracted light caused by the track shift, and the objective lens
It is fixed to the periphery of 24 openings. Therefore, the objective lens 24
Has the advantage of not causing offsets in the tracking error signal, even if it moves in the direction perpendicular to the track groove.
光検出器29はSi−ピンフオトダイオードなどの増幅作用
のない光検出器であり、光磁気信号及びフオーカスエラ
ー信号の検出を行う。フオーカスエラー検出には公知の
方法を用いるが、本発明との直接の関係はないので詳細
な説明は省略する。The photodetector 29 is a photodetector having no amplifying action, such as a Si-pin photodiode, and detects a magneto-optical signal and a focus error signal. A known method is used for focus error detection, but since it has no direct relation to the present invention, detailed description thereof will be omitted.
第1図の説明において、信号レベル低下は、記録媒体及
び光学系により生じないとしたが、実際の光学系でC/N
を正確に予想するうえでは、考慮しなければならない。
信号レベル低下の原因としては、次の2点が考えられ
る。In the explanation of FIG. 1, it is assumed that the signal level reduction does not occur due to the recording medium and the optical system, but in the actual optical system, C / N
Must be taken into account in accurately predicting.
The following two points can be considered as the causes of the signal level reduction.
1)光量損失(吸収やケラレによる振幅の定価) 2)P−S偏光間位相差 光磁気変調成分の強度低下には1)及び2)が寄与し、
非変調成分強度の低下には1)のみが寄与する。光磁気
変調成分強度の低下(光量の損失)を評価するため、光
利用効率εRを定義する。本発明では光利用効率とし
て、記録媒体上の光量を光検出器に到達する光量の比に
注目していることに注意されたい。本実施例では、εR
を求める際に以下の点を考慮した。1) Loss of light amount (fixed value of amplitude due to absorption or vignetting) 2) Phase difference between PS polarization phase difference 1) and 2) contribute to the reduction of the intensity of the magneto-optical modulation component,
Only 1) contributes to the reduction of the intensity of the non-modulation component. In order to evaluate the decrease in the intensity of the magneto-optical modulation component (loss of light quantity), the light use efficiency ε R is defined. Note that the present invention focuses on the ratio of the amount of light on the recording medium to the amount of light reaching the photodetector as the light utilization efficiency. In this example, ε R
The following points were considered when calculating
1)トラツキング用溝(ピツチ1.6μm,深さλ/8,λ=83
5nm)からの回折光が対物レンズ入射瞳内に入射する割
合、これを光利用効率ε0とする。1) Tracking groove (Pitch 1.6 μm, depth λ / 8, λ = 83
The ratio of the diffracted light from 5 nm) entering the entrance pupil of the objective lens is defined as the light utilization efficiency ε 0 .
2)記録媒体から光検出器に至る光路中にある、偏光ビ
ームスプリツタを除くn個の光学素子のP偏光方向振幅
透過率(または反射率)の2乗の光路に沿った積を考
え、光利用効率ε1とする。i番目の光学素子の振幅透
過率をtPi,反射率をrpiとすれば、ε1は次式であらわ
せる、 (24)式においてi番目の光学素子で光束が反射される
場合には、|tPi|2のかわりに|rpi|2を代入すればよい。
なお、偏光ビームスプリツタの偏光特性|rP|2は、C/N計
算の際、変化量として取り扱うのでε1からは除外して
ある。2) Consider the product along the square optical path of the P polarization direction amplitude transmittance (or reflectance) of the n optical elements excluding the polarization beam splitter in the optical path from the recording medium to the photodetector, The light utilization efficiency is ε 1 . If the amplitude transmittance of the i-th optical element is t Pi and the reflectance is r pi , ε 1 can be expressed by the following equation, When the light flux is reflected by the i-th optical element in the equation (24), | r pi | 2 may be substituted instead of | t Pi | 2 .
The polarization characteristic | r P | 2 of the polarized beam splitter is treated as a change amount in the C / N calculation and is therefore excluded from ε 1 .
3)検光子の光学軸のP偏光方向からの角度θAによる
光利用効率ε2を考える。検光子の消光比をηAとすれ
ば、(4)式においてcosθAを sinθAをsinθA+ηAcosθAと置き換えて考えれば良
いから、|R|2≫|K|2としてε2は次式であらわされる。3) Consider the light utilization efficiency ε 2 depending on the angle θ A from the P polarization direction of the optical axis of the analyzer. Assuming that the extinction ratio of the analyzer is η A , cos θ A in equation (4) is Since sin θ A can be considered by replacing sin θ A + η A cos θ A , ε 2 is represented by the following equation as | R | 2 >> | K | 2 .
ε2=cos2θA+ηAsin2θA (25) 1)〜3)より、光磁気非変調成分の光利用効率ε
Rは、次式であらせれる。ε 2 = cos 2 θ A + η A sin 2 θ A (25) From 1) to 3), the light utilization efficiency of the magneto-optical non-modulated component ε
R is given by the following equation.
εR=ε0ε1ε2 (26) 次に、光磁気変調成分の強度低下を考える。そのために
は、光量損失の他にP−S偏光間の位相差について考慮
しなければならない。例えば、第5図に示す様に、記録
媒体からの反射光は、一般的には第10図で示した様な直
線偏光ではなく、P偏光成分とS偏光成分の間に生ずる
位相差により、長軸がカー回転角θKだけ傾いた楕円偏
光となることが知られている。即ち、記録媒体の振幅反
射率のP,S偏光成分、R,Kは(27)式の様にあらわせる。ε R = ε 0 ε 1 ε 2 (26) Next, consider a decrease in the intensity of the magneto-optical modulation component. For that purpose, it is necessary to consider the phase difference between the P and S polarized lights in addition to the loss of light quantity. For example, as shown in FIG. 5, the reflected light from the recording medium is generally not the linearly polarized light as shown in FIG. 10, but the phase difference generated between the P-polarized component and the S-polarized component causes It is known that the major axis becomes elliptically polarized light whose Kerr rotation angle θ K is tilted. That is, the P and S polarized components of the amplitude reflectance of the recording medium, and R and K are expressed as in equation (27).
但し、α0,β0は各振幅反射率の位相成分である。 However, α 0 and β 0 are the phase components of each amplitude reflectance.
この場合カー回転角θKは、 とあらわせる。△0=nπ(nは整数)ならば、記録媒
体からの反射光は直線偏光となるが、それ以外の場合に
はθkを減少させ好ましくない。In this case, the car rotation angle θ K is Express. If Δ 0 = nπ (n is an integer), the reflected light from the recording medium becomes linearly polarized light, but in other cases, θk is decreased, which is not preferable.
光学素子についても全く同様なことがいえて、本実施例
では光磁気変調成分の強度低下を評価するため、光利用
効率εKを定義し、εKを求める際以下の点を考慮し
た。1)光磁気変調成分に対しては、記録媒体から、光
検出器に至る光路中にある偏光ビームスプリツタを除く
n個の光学素子のP,S偏光方向振幅透過率(または反射
率)の光路に沿った積を考え、光利用効率ε3とする。
i番目の光学素子のP,S偏光方向振幅透過率を夫々tPi,t
Si(反射率ならrPi,rSi)とすれば、次式が成り立つ。The same applies to the optical element. In this example, in order to evaluate the intensity decrease of the magneto-optical modulation component, the light utilization efficiency ε K was defined and the following points were taken into consideration when obtaining ε K. 1) For the magneto-optical modulation component, the P, S polarization direction amplitude transmittance (or reflectance) of the n optical elements excluding the polarization beam splitter in the optical path from the recording medium to the photodetector Considering the product along the optical path, the light utilization efficiency is ε 3 .
The amplitude transmittances of the i-th optical element in the P and S polarization directions are t Pi and t, respectively.
If Si (r Pi , r Si for reflectivity), the following equation holds.
(29)式を用いてε3を次式の様にあらわす。 Express ε 3 as in the following equation using equation (29).
(30)式において、i番目の光学素子で光束が反射され
る場合には、|tPi|,|tSi|のかわりに、|rPi|,|rSi|を代
入すればよい。なお、偏光ビームスプリツタの特性|rPi
|,|rSi|はC/N計算の際変化量として取り扱うのでε3か
らは除外してある。 In the formula (30), when the light beam is reflected by the i-th optical element, | r Pi |, | r Si | may be substituted instead of | t Pi |, | t Si |. Characteristics of polarized beam splitter | r Pi
Since |, | r Si | is treated as a variation in C / N calculation, it is excluded from ε 3 .
偏光ビームスプリツタに関してはP,S偏光方向振幅反射
率を各々rP,rSとすれば、 と表せる。但し、γ,δは各振幅反射率の位相成分であ
る。For the polarized beam splitter, if the amplitude reflectances in the P and S polarization directions are r P and r S respectively, Can be expressed as However, γ and δ are phase components of each amplitude reflectance.
2)検光子の光学軸のP偏光方向からの角度θAによる
光利用効率ε4を考える。検光子の消光比をηAとすれ
ば、(4)式においてcosθAを sinθAをsinθA+ηAcosθAと置き換えて考えれば良
いから、|R|2≫|K|2として、ε4は次式であらわされ
る。2) Consider the light utilization efficiency ε 4 depending on the angle θ A from the P polarization direction of the optical axis of the analyzer. If the extinction ratio of the analyzer is η A , then cos θ A in equation (4) is Since sin θ A can be considered by replacing sin θ A + η A cos θ A , ε 4 is represented by the following equation with | R | 2 >> | K | 2 .
ε4=(1−ηA)sin2θA (32) 1),2)より、光磁気変調成分の光利用効率εKは次式
であらわされる。From ε 4 = (1-η A ) sin2θ A (32) 1), 2), the light utilization efficiency ε K of the magneto-optical modulation component is expressed by the following equation.
εK=ε0ε3ε4 (33) 以上より光磁気変調成分、非変調成分の強度を各々IK,I
Rとすれば、 IR≒IOε0ε1・|rP|2|R|2(cos2θA +ηAsin2θA) =IOεR|rP|2|R|2 (35) とあらわされる。ε K = ε 0 ε 3 ε 4 (33) From the above, the intensities of the magneto-optical modulation component and the non-modulation component are I K and I, respectively.
If R , I R ≈I O ε 0 ε 1 · | r P | 2 | R | 2 (cos 2 θ A + η A sin 2 θ A ) = I O ε R | r P | 2 | R | 2 (35) Be done.
(34),(35)を(15)式に代入して、C/Nを最大とす
る偏光ビームスプリツタの偏光特性を求めると次の様に
なる。Substituting equations (34) and (35) into equation (15), the polarization characteristics of the polarized beam splitter that maximizes C / N are obtained as follows.
0|rP|21 (37) |rS|2=1 (38) 以下に計算条件を示す。 0 | r P | 2 1 (37) | r S | 2 = 1 (38) The calculation conditions are shown below.
半導体レーザ21は波長λ=835nmであり、記録媒体26上
で入射光量I0=2×10-3Wとなる様に、偏光ビームスプ
リツタ透過率|tP|2にかかわらず出力を調節されてい
る。The semiconductor laser 21 has a wavelength λ = 835 nm, and its output is adjusted so that the incident light amount I 0 = 2 × 10 −3 W on the recording medium 26 regardless of the polarized beam splitter transmittance | t P | 2. ing.
記録媒体26にはGdTbFeCoが用いられ、|R|2=0.12、θK
=0.74゜P,S偏光方向振幅反射率の位相成分α0,β0の
位相差△0は△0=20゜である。GdTbFeCo is used for the recording medium 26, and | R | 2 = 0.12, θ K
The phase difference Δ0 between the phase components α0 and β0 of the amplitude reflectance of 0.74 ° P, S polarization direction is Δ0 = 20 °.
光利用効率ε0はトラツキング用溝(ピツチ1.6μm、
深さλ/8)からの回折光をN.A.=0.5の対物レンズで受
ける場合、ε0=0.6となる。光利用効率ε1は記録媒
体から光検出器に至る光路中にある偏光ビームスプリツ
タを除く光学素子の透過率の積を考えε1=0.66とな
る。Light utilization efficiency ε 0 is a groove for tracking (Pitch 1.6 μm,
When the diffracted light from the depth λ / 8) is received by the objective lens with NA = 0.5, ε 0 = 0.6. The light utilization efficiency ε 1 is ε 1 = 0.66 considering the product of the transmittances of the optical elements other than the polarization beam splitter in the optical path from the recording medium to the photodetector.
光利用効率ε2,ε4については、θA=45゜及び60゜に
ついてC/Nを計算した。また消光比ηA=1×10-3であ
る。Regarding the light utilization efficiencies ε 2 and ε 4 , C / N was calculated for θ A = 45 ° and 60 °. Further, the extinction ratio η A = 1 × 10 -3 .
光利用効率ε3は、記録媒体から光検出器に至る光路中
にある偏光ビームスプリツタ及び検光子を除く光学素子
のP,S振幅透過率の積を考えればよい。本実施例では透
過の際にP−S偏光の位相差を与える光学素子はないの
で また、|tPi|=|tSi|であるからε3=0.66となる。The light utilization efficiency ε 3 may be considered as the product of the P and S amplitude transmissivities of the optical elements excluding the polarization beam splitter and the analyzer in the optical path from the recording medium to the photodetector. In this embodiment, since there is no optical element that gives a phase difference of PS polarized light at the time of transmission, Since | t Pi | = | t Si |, ε 3 = 0.66.
光検出器25は、光電変換効率κ=0.54のSi−ピンフオト
ダイオードである。記録媒体や半導体レーザーなどの雑
音源によって決まる定数ξ及びζは、各々以下の様に与
えられる。The photodetector 25 is a Si-pin photodiode having a photoelectric conversion efficiency κ = 0.54. The constants ξ and ζ determined by the noise source such as the recording medium and the semiconductor laser are given as follows.
ξ=2×10-13(R.I.N.) ζ=1×10-11(R.I.N.) また、熱雑音Tは、ボルツマン定数k=1.38×10-23、
等価雑音温度Te=300〔k〕、負荷抵抗Rf=1×10
4〔Ω〕、信号検出のバンド幅△B=3×104〔1/Hz〕と
して、T=5×10-20と与えられる。なお、光検出器の
もつ容量などにより熱雑音Tは(14)式の様な簡単な形
で記述できないこともあるので、そのような場合はこれ
に従う必要はない。ξ = 2 × 10 -13 (RIN) ζ = 1 × 10 -11 (RIN) Further, the thermal noise T is the Boltzmann constant k = 1.38 × 10 -23 ,
Equivalent noise temperature Te = 300 [k], load resistance R f = 1 × 10
Assuming that 4 [Ω] and signal detection bandwidth ΔB = 3 × 10 4 [1 / Hz], T = 5 × 10 −20 . Note that the thermal noise T may not be described in a simple form like the formula (14) due to the capacity of the photodetector, and in such a case, it is not necessary to comply with this.
第6図、及び第7図は、(36)〜(38)式で与えられる
偏光特性をもった偏光ビームスプリツタを用いた場合
(実線で示す)と、ハーフミラーを用いた場合(一点鎖
線で示す)のC/Nを比較したものである。第6図はθA
=45゜とした場合、第7図はθA=60゜とした場合で、
縦軸はC/N、横軸は偏光ビームスプリツタのP偏光方向
反射率|rP|2を示す。いずれも、偏光ビームスプリツタ
のS偏光方向反射率|rS|2=1としてある。ここでハー
フミラーは、|rP|2=|rS|2=0.5の特性を有する。6 and 7 show the case of using a polarization beam splitter having the polarization characteristics given by the formulas (36) to (38) (shown by a solid line) and the case of using a half mirror (a chain line). It is a comparison of C / N. Figure 6 shows θ A
= 45 °, Fig. 7 shows θ A = 60 °,
The vertical axis represents C / N, and the horizontal axis represents the P-polarization direction reflectance | r P | 2 of the polarized beam splitter. In both cases, the reflectance in the S-polarized direction of the polarized beam splitter is | r S | 2 = 1. Here, the half mirror has a characteristic of | r P | 2 = | r S | 2 = 0.5.
θA=45゜の場合は、|rP|2=0.16でC/Nは最大となり、
ハーフミラーを用いた従来の装置の場合と比較して、本
実施例では4.5dBC/Nが向上している。|rP|2=0.08〜0.
4,|rS|2=1になる偏光ビームスプリツタを用いれば従
来のハーフミラーに対して十分良好なC/Nが得られる。When θ A = 45 °, | r P | 2 = 0.16 and C / N becomes maximum,
Compared with the case of the conventional device using the half mirror, 4.5dBC / N is improved in this embodiment. | r P | 2 = 0.08 to 0.
If a polarized beam splitter with 4, | r S | 2 = 1 is used, a sufficiently good C / N can be obtained with respect to the conventional half mirror.
θA=60゜の場合は、|rP|2=0.32でC/Nは最大となり、
ハーフミラーを用いた従来の装置の場合と比較して、本
実施例では3dBC/Nが向上している。|rP|2=0.2〜0.5,|r
S|2=1なる偏光ビームスプリツタを用いれば従来のハ
ーフミラーに対して十分良好なC/Nが得られる。When θ A = 60 °, | r P | 2 = 0.32 and C / N becomes maximum,
Compared to the case of the conventional device using the half mirror, 3dBC / N is improved in this embodiment. | r P | 2 = 0.2 to 0.5, | r
If a polarized beam splitter with S | 2 = 1 is used, a sufficiently good C / N can be obtained with respect to the conventional half mirror.
なお、本実施例では、偏光ビームスプリツタにより生じ
るP−S偏光間位相差△PBSはいずれの場合も△PBS=16
0゜となっており、記録媒体で生ずる位相差△0との間
に、 △0+△PBS=π (39) なる関係がある。これにより光磁気変調成分強度低下を
防止している。このような偏光特性の偏光ビームスプリ
ツタを作製することは容易である。In this embodiment, P-S polarizations phase difference caused by the polarization beam splitter △ PBS is in any case △ PBS = 16
0 has become °, between the phase difference △ 0 occurring in the recording medium, △ 0 + △ PBS = π (39) becomes relevant. This prevents the intensity of the magneto-optical modulation component from decreasing. It is easy to manufacture a polarized beam splitter having such a polarization characteristic.
第8図(A)、(B)は夫々本発明の第4実施例を示す
概略図であり、(B)は(A)を矢印A方向から見た図
を示している。第8図(A)、(B)において第4図と
同一の部材には同一符号を付し、詳細な説明は省略す
る。本実施例においても、光検出器29以後の信号処理系
は、第2図示の如く構成される。本実施例は、第3実施
例の偏光ビームスプリツタ23の代わりに、偏光ビームス
プリツタ10を用い、この偏光ビームスプリツタ10の透過
光を検出するように構成したものである。偏光ビームス
プリツタ10の面bは、光検出器29に迷光が入射しない様
に、所定の角度傾けてある。8 (A) and 8 (B) are schematic views showing a fourth embodiment of the present invention, respectively, and FIG. 8 (B) is a view of FIG. 8 (A) as seen from the direction of arrow A. 8 (A) and 8 (B), the same members as those in FIG. 4 are designated by the same reference numerals, and detailed description thereof will be omitted. Also in this embodiment, the signal processing system after the photodetector 29 is configured as shown in the second diagram. In the present embodiment, a polarized beam splitter 10 is used in place of the polarized beam splitter 23 of the third embodiment, and the transmitted light of the polarized beam splitter 10 is detected. The surface b of the polarized beam splitter 10 is inclined by a predetermined angle so that stray light does not enter the photodetector 29.
本実施例では、第4図の説明文中で使用したP,S偏光方
向を、各々置き換えて考えれば良い。但し、(34)(3
5)式においては、rPをtS、rSをtPと置き換えてやる必
要がある。即ち、光磁気変調成分、非変調成分の各々
IK,IRとすれば IR≒IOε0ε1|tS|2|R|2(cos2θA +ηAsin2θA) (41) とあらわらせる。In the present embodiment, the P and S polarization directions used in the description of FIG. 4 may be replaced with each other. However, (34) (3
In equation (5), it is necessary to replace r P with t S and r S with t P. That is, each of the magneto-optical modulation component and the non-modulation component
If I K , I R I R ≈I O ε 0 ε 1 | t S | 2 | R | 2 (cos 2 θ A + η A sin 2 θ A ) (41)
(40),(41)式を(15)式に代入してC/Nを最大とす
る偏光ビームスプリツタの偏光特性を求めると、 0|tS|21 (43) |tP|2=1 (44) 計算条件を同一にとれば、本実施例においても第6図、
第7図に示した結果と同様な結果が得られる。Substituting Eqs. (40) and (41) into Eq. (15), the polarization characteristics of the polarized beam splitter that maximizes C / N are obtained. 0 | t S | 2 1 (43) | t P | 2 = 1 (44) If the calculation conditions are the same, FIG.
Results similar to those shown in FIG. 7 are obtained.
但し、横軸は|tS|となる。However, the horizontal axis is | t S |.
なお、記録媒体で生ずるP−S偏光間位相差を補償する
ような偏光特性をもつ偏光ビームスプリツタを作製する
ことは容易である。It should be noted that it is easy to manufacture a polarization beam splitter having polarization characteristics that compensate for the P-S polarization phase difference that occurs in the recording medium.
本発明は、以上説明した実施例の他にも種々の応用が可
能である。例えば実施例では光磁気記録媒体の反射光を
検出したが、光磁気記録媒体を透過して、フアラデー効
果によって変調を受けた光束を検出するように構成して
も良い。The present invention can be applied in various ways other than the embodiments described above. For example, although the reflected light of the magneto-optical recording medium is detected in the embodiment, it may be configured to detect the light flux which is transmitted through the magneto-optical recording medium and is modulated by the Faraday effect.
以上説明したように、本発明は従来の光磁気情報再生装
置において、最適な偏光特性を持った偏光ビームスプリ
ツタを用いることにより、信号検出のC/Nを向上させる
効果を有する。更には、本発明により高いC/Nが得られ
るので、従来の装置の様な複雑な検出系が不要となり、
装置の信頼性を高め、且つ製造コストを低減することが
出来る。As described above, the present invention has the effect of improving the C / N of signal detection by using the polarization beam splitter having the optimum polarization characteristics in the conventional magneto-optical information reproducing apparatus. Furthermore, since a high C / N can be obtained by the present invention, a complicated detection system like the conventional device is unnecessary,
The reliability of the device can be improved and the manufacturing cost can be reduced.
【図面の簡単な説明】 第1図は本発明の一実施例の光学系を示す概略図、第2
図は第1図示の実施例の信号処理系を示す概略図、第3
図及び第4図は夫々本発明の他の実施例を示す概略図、
第5図は光磁気記録媒体からの反射光の偏光状態を示す
図、第6図及び第7図は夫々本発明における偏光ビーム
スプリツタの偏光特性とC/Nとの関係を示す図、第8図
(A)、(B)は夫々本発明の更に他の実施例を示す概
略図、第9図は従来の光磁気情報再生装置の例を示す概
略図、第10図は一般的な光磁気信号検出の原理を示す図
である。 12……偏光ビームスプリツタ、 13……検出光、21……半導体レーザ、 22……コリメータレンズ、24……対物レンズ、 26……光磁気記録媒体、27……検光子、 28……集光レンズ、29……光検出器。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing an optical system according to an embodiment of the present invention, and FIG.
FIG. 3 is a schematic diagram showing the signal processing system of the embodiment shown in FIG. 1, and FIG.
FIG. 4 and FIG. 4 are schematic views showing another embodiment of the present invention, respectively.
FIG. 5 is a diagram showing the polarization state of the reflected light from the magneto-optical recording medium, and FIGS. 6 and 7 are diagrams showing the relationship between the polarization characteristics and the C / N of the polarization beam splitter according to the present invention. 8A and 8B are schematic views showing still another embodiment of the present invention, FIG. 9 is a schematic view showing an example of a conventional magneto-optical information reproducing apparatus, and FIG. 10 is a general optical system. It is a figure which shows the principle of magnetic signal detection. 12 …… Polarized beam splitter, 13 …… Detection light, 21 …… Semiconductor laser, 22 …… Collimator lens, 24 …… Objective lens, 26 …… Optical recording medium, 27 …… Analyzer, 28 …… Collection Optical lens, 29 ... Photodetector.
Claims (2)
が記録された記録媒体上に照射する手段と、磁気光学効
果により前記情報に応じて偏光状態に変調を受けた前記
記録媒体からの反射又は透過光束を、その偏光成分に応
じた所定の割合で反射および透過する偏光ビームスプリ
ッタと、前記偏光ビームスプリッタで反射された光束を
光電検出する増幅作用のない光検出器と、前記光検出器
の検出信号を増幅し前記情報を再生する増幅手段とから
成り、前記光検出器に入射する磁気光学効果により変調
を受けない偏光成分強度の平均をR、光磁気信号観測
周波数におけるこの強度ゆらぎの2乗平均を 前記記録媒体上における入射光束の光量をI0、前記記録
媒体の振幅反射率をR、前記偏光ビームスプリッタを除
く記録媒体より光検出器に至る光学系の光利用効率を
ε、前記光検出器の光電変換効率をκ、光磁気信号観測
周波数における前記増幅手段の熱雑音をT、検出信号の
バンド幅をΔBとした時、前記偏光ビームスプリッタの
前記所定方向の偏光成分に対する振幅反射率rP及び前記
所定方向と垂直方向の偏光成分に対する振幅反射率r
Sが、夫々以下の条件、 を満足することを特徴とした光磁気情報再生装置。1. A means for irradiating a recording medium on which information is magnetically recorded with a light beam polarized in a predetermined direction, and a recording medium which is modulated in a polarization state according to the information by a magneto-optical effect. A reflected or transmitted light beam, a polarization beam splitter that reflects and transmits the light beam at a predetermined ratio according to its polarization component, a photodetector having no amplification effect that photoelectrically detects the light beam reflected by the polarization beam splitter, and the light Amplification means for amplifying the detection signal of the detector and reproducing the information, and the average of the polarization component intensities that are not modulated by the magneto-optical effect incident on the photodetector is R 1 , and this intensity at the magneto-optical signal observation frequency The root mean square of the fluctuation The light quantity of the incident light flux on the recording medium is I 0 , the amplitude reflectance of the recording medium is R, the light utilization efficiency of the optical system from the recording medium excluding the polarization beam splitter to the photodetector is ε, and the photodetector is , K, the thermal noise of the amplification means at the magneto-optical signal observation frequency is T, and the bandwidth of the detection signal is ΔB, the amplitude reflectance r P of the polarization beam splitter with respect to the polarization component in the predetermined direction. And the amplitude reflectance r for the polarization component in the direction perpendicular to the predetermined direction
S is the following conditions, A magneto-optical information reproducing device characterized by satisfying the requirements.
が記録された記録媒体上に照射する手段と、磁気光学効
果により前記情報に応じて偏光状態に変調を受けた前記
記録媒体からの反射又は透過光束を、その偏光成分に応
じて所定の割合で反射および透過する偏光ビームスプリ
ッタと、前記偏光ビームスプリッタを透過した光束を光
電検出する増幅作用のない光検出器と、前記光検出器の
検出信号を増幅し前記情報を再生する増幅手段とから成
り、前記光検出器に入射する磁気光学効果により変調を
受けない偏光成分強度の平均をR、光磁気信号観測周
波数におけるこの強度のゆらぎの2乗平均を 前記記録媒体上における入射光束の光量をI0、前記記録
媒体の振幅反射率をR、前記偏光ビームスプリッタを除
く記録媒体より光検出器に至る光学系の光利用効率を
ε、前記光検出器の光電変換効率をκ、光磁気信号観測
周波数における前記増幅手段の熱雑音をT、検出信号の
バンド幅をΔBとした時、前記偏光ビームスプリッタの
前記所定方向の偏光成分に対する振幅透過率tSおよび前
記所定方向と垂直方向の偏光成分に対する振幅透過率tP
が夫々以下の条件、 を満足することを特徴とした光磁気情報再生装置。2. A means for irradiating a recording medium on which information is magnetically recorded with a light beam polarized in a predetermined direction, and the recording medium modulated to a polarization state according to the information by a magneto-optical effect. A polarized beam splitter that reflects and transmits the reflected or transmitted luminous flux at a predetermined ratio according to its polarization component, a photodetector without amplification effect that photoelectrically detects the luminous flux transmitted through the polarized beam splitter, and the photodetection Amplification means for amplifying the detection signal of the optical detector and reproducing the information, and the average of the polarization component intensities which are not modulated by the magneto-optical effect incident on the photodetector is R 1 , and the intensity of this intensity at the magneto-optical signal observation frequency The root mean square of the fluctuation The light quantity of the incident light flux on the recording medium is I 0 , the amplitude reflectance of the recording medium is R, the light utilization efficiency of the optical system from the recording medium excluding the polarization beam splitter to the photodetector is ε, and the photodetector is Where ω is the photoelectric conversion efficiency, T is the thermal noise of the amplifying means at the observation frequency of the magneto-optical signal, and ΔB is the bandwidth of the detection signal, the amplitude transmittance t S of the polarization beam splitter with respect to the polarization component in the predetermined direction. And the amplitude transmittance t P for the polarized component in the direction perpendicular to the predetermined direction
Are the following conditions, A magneto-optical information reproducing device characterized by satisfying the requirements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61246617A JPH07101524B2 (en) | 1986-10-17 | 1986-10-17 | Magneto-optical information reproducing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61246617A JPH07101524B2 (en) | 1986-10-17 | 1986-10-17 | Magneto-optical information reproducing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63100647A JPS63100647A (en) | 1988-05-02 |
| JPH07101524B2 true JPH07101524B2 (en) | 1995-11-01 |
Family
ID=17151066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61246617A Expired - Fee Related JPH07101524B2 (en) | 1986-10-17 | 1986-10-17 | Magneto-optical information reproducing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07101524B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3488261B2 (en) * | 1992-07-27 | 2004-01-19 | 三洋電機株式会社 | Optical recording medium reproducing method and reproducing apparatus |
| US7570562B2 (en) | 2004-01-07 | 2009-08-04 | Sony Corporation | Optical disk unit |
-
1986
- 1986-10-17 JP JP61246617A patent/JPH07101524B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63100647A (en) | 1988-05-02 |
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