JPH07101588B2 - Displacement element and relay device using the same - Google Patents

Displacement element and relay device using the same

Info

Publication number
JPH07101588B2
JPH07101588B2 JP14522389A JP14522389A JPH07101588B2 JP H07101588 B2 JPH07101588 B2 JP H07101588B2 JP 14522389 A JP14522389 A JP 14522389A JP 14522389 A JP14522389 A JP 14522389A JP H07101588 B2 JPH07101588 B2 JP H07101588B2
Authority
JP
Japan
Prior art keywords
electric field
ferroelectric
phase
shape memory
cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP14522389A
Other languages
Japanese (ja)
Other versions
JPH0311516A (en
Inventor
研二 内野
聖 依田
Original Assignee
ジューキ株式会社
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Filing date
Publication date
Application filed by ジューキ株式会社 filed Critical ジューキ株式会社
Priority to JP14522389A priority Critical patent/JPH07101588B2/en
Publication of JPH0311516A publication Critical patent/JPH0311516A/en
Publication of JPH07101588B2 publication Critical patent/JPH07101588B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H57/00Electrostrictive relays; Piezoelectric relays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H61/00Electrothermal relays
    • H01H61/01Details
    • H01H61/0107Details making use of shape memory materials

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、変位素子及びその変位素子を用いたリレー装
置、更に詳細には、所定電界を印加したとき反強誘電相
から強誘電相へ相転移してデジタル的変位を起こし、電
界遮断後も強誘電相を維持し変位状態を継続されること
ができる変位素子及びその変位素子を用いた、キープリ
レー型リレー装置に関する。
Description: TECHNICAL FIELD The present invention relates to a displacement element and a relay device using the displacement element, and more specifically, from an antiferroelectric phase to a ferroelectric phase when a predetermined electric field is applied. The present invention relates to a displacement element capable of causing a digital displacement by a phase transition and maintaining a ferroelectric phase even after an electric field is cut off, and a keep relay type relay device using the displacement element.

[従来の技術] 従来電気接点を開閉させるリレーは、電磁駆動式のもの
が主流であり、電気信号をコイルに印加し、発生する電
磁力に可動接片を移動させ電気接点の開閉を行ないリレ
ー動作を行なっている。
[Prior Art] Conventionally, a relay that opens and closes an electrical contact is mainly of an electromagnetic drive type, and an electrical signal is applied to a coil, and a movable contact piece is moved by electromagnetic force generated to open and close the electrical contact. It is operating.

このような電磁式のリレーでは、小型化には限度があ
り、また高速に応答させる必要性があることから、圧電
バイモルフ素子を用いた圧電リレー(ピエゾ・エレクト
リック・プロダクツ(Piezo Electric Products)社
製)が用いられるようになっている。この圧電リレーで
は、反対方向に分極した2枚の圧電素子を貼り合わせた
圧電バイモルフ素子を用いており、スナップ駆動バネあ
るいは永久磁石を用いて圧電バイモルフ素子を機械的に
単安定または双安定状態にしておき、電気信号に応じて
バイモルフ素子を変移させリレー動作を行なっている。
また圧電バイモルフ素子とバネを組み合わせ、圧電バイ
モルフの変形をバネによって付勢された可動片に伝達
し、数10μmでオンオフ可能な高感度スナップ動作スイ
ッチが開発されている。また、圧電アクチュエータを複
数段積層させ高速応答性を向上させた圧電リレーも知ら
れている(例えば、「OMRON Techinics No.70p52(198
3)佐藤et alあるいはJpn.J.Appl.Phys.24 Suppl.24−
3,190(1985)S.Mitsuhashi et al」を参照)。
In such an electromagnetic relay, there is a limit to miniaturization and it is necessary to respond at high speed. Therefore, a piezoelectric relay using a piezoelectric bimorph element (Piezo Electric Products) ) Has been used. This piezoelectric relay uses a piezoelectric bimorph element in which two piezoelectric elements polarized in opposite directions are bonded together, and a snap drive spring or a permanent magnet is used to mechanically make the piezoelectric bimorph element a monostable or bistable state. The bimorph element is moved according to the electric signal to perform the relay operation.
In addition, a highly sensitive snap operation switch that combines a piezoelectric bimorph element and a spring, transmits deformation of the piezoelectric bimorph to a movable piece biased by the spring, and can be turned on and off within several tens of μm has been developed. In addition, a piezoelectric relay in which a plurality of piezoelectric actuators are stacked in layers to improve high-speed response is also known (for example, “OMRON Techinics No.70p52 (198
3) Sato et al or Jpn.J.Appl.Phys.24 Suppl.24−
3,190 (1985) S. Mitsuhashi et al ").

[発明が解決しようとする課題] しかし、このような従来の電磁式リレーでは、リレーを
駆動するのに消費電力が大きくなり、また駆動時勢が発
生し、小型化、集積化できないという問題があった。ま
た、圧電リレーではリレー接点をオンあるいはオフ状態
に保持するのに別に保持装置が必要となり、そのために
電力が消費されてしまうと共に、装置全体が大型とな
り、小型化、集積化には自ずと限度があった。
[Problems to be Solved by the Invention] However, in such a conventional electromagnetic relay, there is a problem in that power consumption is large to drive the relay, driving time is generated, and miniaturization and integration cannot be achieved. It was In addition, the piezoelectric relay requires a separate holding device to hold the relay contact in the on or off state, which consumes power and makes the entire device large, which naturally limits the miniaturization and integration. there were.

従って、本発明はこのような問題点を解決するためにな
されたもので、消費電力が少なく、発熱が小量で、また
別に保持装置を用いることなく変位状態を保持できる変
位素子並びにそれを用いたリレー装置を提供することを
その課題とする。
Therefore, the present invention has been made to solve such a problem, and is a displacement element that consumes less power, generates a small amount of heat, and can hold a displacement state without using a holding device, and the displacement element. It is an object of the present invention to provide an existing relay device.

さらに前記課題に加え、変位素子それ自身が温度を検知
し、従って他の別の温度検出機構を用いることなく、所
定温度に達すると変位状態を初期歪み状態に戻すことが
できるリレー装置を提供するものである。
Furthermore, in addition to the above-mentioned problems, a displacement device itself detects a temperature, and therefore, a relay device capable of returning a displacement state to an initial strain state when a predetermined temperature is reached without using another temperature detection mechanism. It is a thing.

[課題を解決するための手段] このような課題を解決するために、本発明では、所定電
界を印加したとき誘起される反強誘電相から強誘電相へ
の相転移によりデジタル的に変位し、電界遮断後も強誘
電相を維持する強誘電体形状記憶性セラミックス素子
と、前記形状記憶性セラミックス素子の両面に形成され
た電極とからなり、前記形状記憶性セラミックス素子に
所定電界を印加して形状記憶性セラミックス素子をデジ
タル的に変位させ、電界遮断後もその変位状態を継続さ
せることができる構成を採用した。
[Means for Solving the Problem] In order to solve such a problem, the present invention digitally displaces a phase transition from an antiferroelectric phase to a ferroelectric phase induced when a predetermined electric field is applied. , A ferroelectric shape-memory ceramic element that maintains a ferroelectric phase even after the electric field is cut off, and electrodes formed on both sides of the shape-memory ceramic element, and a predetermined electric field is applied to the shape-memory ceramic element. The shape memory ceramics element is digitally displaced so that the displacement state can be continued even after the electric field is cut off.

また、本発明では、所定電界を印加したとき誘起される
反強誘電相から強誘電相への相転移によりデジタル的に
変位し、電界遮断後も強誘電相を維持する第1と第2の
強誘電体形状記憶性セラミックス素子と、前記第1と第
2の形状記憶性セラミックス素子の両面に形成された電
極とからなり、前記第1と第2の形状記憶性セラミック
ス素子を積層し、第1の形状記憶性セラミックス素子に
所定電界を印加して変位させ、電界遮断後もその変位状
態を継続させる構成も採用している。
Further, according to the present invention, the phase transition from the antiferroelectric phase to the ferroelectric phase induced when a predetermined electric field is applied causes digital displacement, and the ferroelectric phase is maintained even after the electric field is cut off. A ferroelectric shape memory ceramics element and electrodes formed on both surfaces of the first and second shape memory ceramics elements, wherein the first and second shape memory ceramics elements are laminated, A configuration is also adopted in which a predetermined electric field is applied to the shape memory ceramics element 1 to displace it, and the displacement state is continued even after the electric field is cut off.

また、本発明では、所定電界を印加したとき誘起される
反強誘電相から強誘電相への相転移によりデジタル的に
変位し、電界遮断後も強誘電相を維持する強誘電体形状
記憶性セラミックス素子を複数個積層させた積層体と、
前記積層体の両側面に各側面で千鳥状になるように積層
体の一段置きに配置された絶縁部と、前記絶縁部を通り
積層方向に連続して形成された金属導体部とからなり、
前記金属導体部に所定電界を印加して積層体を積層方向
に変位させ、電界遮断後もその変位状態を継続させる構
成も採用した。
Further, according to the present invention, the ferroelectric shape memory property that is digitally displaced by the phase transition from the antiferroelectric phase to the ferroelectric phase induced when a predetermined electric field is applied and maintains the ferroelectric phase even after the electric field is cut off. A laminated body in which a plurality of ceramic elements are laminated,
Insulating parts arranged in alternate stages on the stack so as to be zigzag on each side on both sides of the stack, and a metal conductor part continuously formed in the stacking direction through the insulating part,
A configuration is also adopted in which a predetermined electric field is applied to the metal conductor portion to displace the laminated body in the laminating direction, and the displacement state is continued even after the electric field is cut off.

さらに、本発明では、所定電界を印加したとき誘起され
る反強誘電相から強誘電相への相転移によりデジタル的
に変位し、電界遮断後も強誘電相を維持する強誘電体形
状記憶性セラミックス素子と、前記形状記憶性セラミッ
クス素子のデジタル的変位に従って可動し、電気接点を
オンオフさせる可動子を有し、所定電界を印加して形状
記憶性セラミックス素子をデジタル的に変位させ電気接
点をオンオフいずれかの平常状態から反転するととも
に、電界遮断後も強誘電相を維持させその反転状態を継
続させる構成も採用している。
Further, according to the present invention, the ferroelectric shape memory property is digitally displaced by the phase transition from the antiferroelectric phase to the ferroelectric phase induced when a predetermined electric field is applied, and the ferroelectric phase is maintained even after the electric field is cut off. It has a ceramic element and a mover that moves according to digital displacement of the shape memory ceramic element to turn on and off electrical contacts, and applies a predetermined electric field to digitally displace the shape memory ceramic element to turn electrical contacts on and off. In addition to reversing from one of the normal states, a configuration is adopted in which the ferroelectric phase is maintained and the reversal state is continued even after the electric field is cut off.

また、本発明では、所定電界を印加したとき誘起される
反強誘電相から強誘電相への相転移によりデジタル的に
変位し、電界遮断後も強誘電相を維持する強誘電体形状
記憶性セラミックス素子を複数個積層させた積層体と、
前記積層体の両側面に各側面で千鳥状になるように積層
体の一段置きに配置された絶縁部と、前記絶縁部を通り
積層方向に連続して形成された金属導体部と、前記積層
体のデジタル的変位に従って可動し、電気接点をオンオ
フさせる可動子を有し、前記金属導体部に所定電界を印
加して積層体を積層方向に変位させ電気接点をオンオフ
いずれかの平常状態から反転するとともに、電界遮断後
も強誘電相を維持させその反転状態を継続させる構成も
採用した。
Further, according to the present invention, the ferroelectric shape memory property that is digitally displaced by the phase transition from the antiferroelectric phase to the ferroelectric phase induced when a predetermined electric field is applied and maintains the ferroelectric phase even after the electric field is cut off. A laminated body in which a plurality of ceramic elements are laminated,
Insulating portions arranged at alternate stages on each side of the laminated body in a zigzag manner on each side, metal conductor portions continuously formed in the laminating direction through the insulating portion, and the laminated body It has a mover that moves according to the digital displacement of the body and turns on and off the electric contact, and applies a predetermined electric field to the metal conductor part to displace the laminated body in the laminating direction to turn the electric contact on and off from the normal state. In addition, a structure was adopted in which the ferroelectric phase was maintained and its inversion state continued even after the electric field was cut off.

また、本発明では、所定電界を印加したとき誘起される
反強誘電相から強誘電相への相転移によりデジタル的に
変位し、電界遮断後も強誘電相を維持する強誘電体形状
記憶性セラミックス素子と、前記形状記憶性セラミック
ス素子のデジタル的変位に従って可動し、電気接点をオ
ンオフさせる可動子を有し、所定電界を印加して形状記
憶性セラミックス素子をデジタル的に変位させ電気接点
をオンオフいずれかの平常状態から反転するとともに、
所定温度にして電気接点を再び平常状態に復帰させるこ
とができる構成も採用した。
Further, according to the present invention, the ferroelectric shape memory property that is digitally displaced by the phase transition from the antiferroelectric phase to the ferroelectric phase induced when a predetermined electric field is applied and maintains the ferroelectric phase even after the electric field is cut off. It has a ceramic element and a mover that moves according to digital displacement of the shape memory ceramic element to turn on and off electrical contacts, and applies a predetermined electric field to digitally displace the shape memory ceramic element to turn electrical contacts on and off. While reversing from any normal state,
We also adopted a configuration in which the electrical contacts can be returned to the normal state again at a predetermined temperature.

更に、本発明では、所定電界を印加したとき誘起される
反強誘電相から強誘電相への相転移によりデジタル的に
変位し、電界遮断後も強誘電相を維持する強誘電体形状
記憶性セラミックス素子を複数個積層させた積層体と、
前記積層体の両側面に各側面で千鳥状になるように積層
体の一段置きに配置された絶縁部と、前記絶縁部を通り
積層方向に連続して形成された金属導体部と、前記積層
体のデジタル的変位に従って可動し、電気接点をオンオ
フさせる可動子を有し、前記金属導体部に所定電界を印
加して積層体を積層方向に変位させ電気接点をオンオフ
いずれかの平常状態から反転するとともに、所定温度に
して電気接点を再び平常状態に復帰させることができる
構成も採用した。
Further, according to the present invention, the ferroelectric shape memory property is digitally displaced by the phase transition from the antiferroelectric phase to the ferroelectric phase induced when a predetermined electric field is applied, and the ferroelectric phase is maintained even after the electric field is cut off. A laminated body in which a plurality of ceramic elements are laminated,
Insulating portions arranged at alternate stages on each side of the laminated body in a zigzag manner on each side, metal conductor portions continuously formed in the laminating direction through the insulating portion, and the laminated body It has a mover that moves according to the digital displacement of the body and turns on and off the electric contact, and applies a predetermined electric field to the metal conductor part to displace the laminated body in the laminating direction to turn the electric contact on and off from the normal state. In addition, a configuration was adopted in which the electrical contacts can be returned to the normal state again at a predetermined temperature.

[作用] このような構成では、強誘電体形状記憶性セラミックス
素子に所定の所定電界を印加したとき形状記憶性セラミ
ックス素子は、反強誘電相から強誘電相へ相転移し、そ
れにより形状記憶性セラミックス素子はデジタル的に変
位する。その場合、形状記憶性セラミックス素子は、そ
の組成に従い、電界遮断後も強誘電相を維持し、その変
位状態を保持することができ、強誘電相の歪み状態を記
憶する効果が得られる。本発明では、この性質を利用し
て変位素子を形成している。これをリレー装置に利用し
た場合、このような形状記憶性を有するセラミックス素
子のデジタル的変位に従って可動し、電気接点をオンオ
フさせる可動子を設け、形状記憶性セラミックス素子に
所定電界を印加してデジタル的に変位させ可動子を介し
て電気接点をオン状態にするとともに、電界遮断後も強
誘電相を維持させオン状態を継続させるようにしてい
る。
[Operation] In such a configuration, when a predetermined predetermined electric field is applied to the ferroelectric shape memory ceramics element, the shape memory ceramics element undergoes a phase transition from the antiferroelectric phase to the ferroelectric phase, whereby the shape memory Ceramic elements are digitally displaced. In that case, the shape-memory ceramic element can maintain the ferroelectric phase even after the electric field is cut off depending on its composition, and can maintain its displaced state, and the effect of memorizing the strained state of the ferroelectric phase can be obtained. In the present invention, this property is utilized to form the displacement element. When this is used in a relay device, a mover that moves according to the digital displacement of such a shape-memory ceramic element to turn on / off electrical contacts is provided, and a predetermined electric field is applied to the shape-memory ceramic element to digitally move it. The electric contact is turned on through the mover by turning the electric contact, and the ferroelectric phase is maintained and the on state is continued even after the electric field is cut off.

また、このようなリレー装置において、形状記憶性セラ
ミックス素子に所定電界を印加してデジタル的に変位さ
せ可動子を介して電気接点をオン(あるいはオフ)の状
態から反転するとともに、所定温度にして電気接点を再
びオン(あるいはオフ)の状態に復帰させるようにして
いる。
Further, in such a relay device, a predetermined electric field is applied to the shape memory ceramics element to digitally displace it, and the electric contact is reversed from the on (or off) state via the mover and the predetermined temperature is set. The electrical contact is restored to the on (or off) state again.

[実施例] 以下、図面に示す実施例に従い本発明を詳細に説明す
る。
[Examples] The present invention will be described in detail below with reference to the examples shown in the drawings.

例えば、ジルコン酸チタン酸鉛系セラミックス素子に電
界を印加すると、そのセラミックス素子の反強誘電相
が、ある臨界電界以上で突然強誘電相に相転移する。そ
の際、比較的等方的に0.1%程度の大きな線膨張歪みを
示し、この相転移によりセラミックス素子は、デジタル
的に変位することが知られている。この場合、このセラ
ミックスの形状変化には、電界を切ると元の状態に戻る
第1種材料と、電界を切っても強誘電相の状態が維持さ
れる第2種材料があることがわかっている。
For example, when an electric field is applied to a lead zirconate titanate-based ceramic element, the antiferroelectric phase of the ceramic element suddenly undergoes a phase transition to a ferroelectric phase above a certain critical electric field. At that time, a large linear expansion strain of about 0.1% is exhibited relatively isotropically, and it is known that the ceramic element is digitally displaced by this phase transition. In this case, it has been found that the shape change of the ceramics includes a type 1 material that returns to the original state when the electric field is cut off, and a type 2 material that maintains the ferroelectric phase state even when the electric field is cut off. There is.

第1図(a)〜(c)には、例えば、 (Pb0.99Nb0.02) [(Zr0.6Sn0.4)1−y Tiy]0.98O3 (以下PNZSTという)で表される強誘電体形状記憶性セ
ラミックスに電界を印加したときの電界誘起歪み特性
(横効果)が図示されている。
FIGS. 1 (a) to 1 (c) show, for example, a ferroelectric shape represented by (Pb0.99Nb0.02) [(Zr0.6Sn0.4) 1-y Tiy] 0.98O3 (hereinafter referred to as PNZST). The electric field induced strain characteristics (lateral effect) when an electric field is applied to the memory ceramics are illustrated.

第1図(a)は、y=0.060のときの特性で、電界がV2
とのとき反強誘電相が強誘電相に相転移しΔLの歪み変
位を起こす。電界をV2からV1に減少するまではその変位
量を維持しており、典型的な二重履歴曲線となり、電界
の減少により変位は元に戻るので上述した第1種の材料
となる。この場合、相転移における変化量(ΔL/L=8x1
0-4と比較して反強誘電状態あるいは強誘電状態での歪
みの電界依存性は小さく、歪みのオンオフ状態が実現さ
れており、「デジタル的な変位素子」としての使用が可
能になる。
Fig. 1 (a) shows the characteristics when y = 0.060 and the electric field is V2.
At that time, the antiferroelectric phase undergoes a phase transition to the ferroelectric phase, causing a strain displacement of ΔL. The displacement amount is maintained until the electric field is reduced from V2 to V1, and a typical double hysteresis curve is formed, and the displacement returns to the original state due to the reduction of the electric field, so that the material is the first-type material described above. In this case, the amount of change in the phase transition (ΔL / L = 8x1
Compared with 0 -4 , the electric field dependence of the strain in the antiferroelectric state or the ferroelectric state is small, and the on / off state of the strain is realized, and it can be used as a "digital displacement element".

チタン含有量が上述したPNZST系より少し多い組成(y
=0.063)の場合、一旦強誘電相が誘起されると、第1
図(b)に図示したように電界をVo=0にしても反強誘
電相に戻ることはなく、「強誘電相の歪み状態を記憶す
る効果」を示すようになる。これは、第2種の材料とな
り、元の反強誘電相に戻すためには、逆バイアス電界を
印加しなければならない。
Composition with slightly higher titanium content than the PNZST system described above (y
= 0.063), once the ferroelectric phase is induced, the first
As shown in FIG. 9B, even if the electric field is Vo = 0, the antiferroelectric phase does not return, and the "effect of storing the strained state of the ferroelectric phase" is exhibited. This becomes a material of the second kind, and a reverse bias electric field must be applied in order to restore the original antiferroelectric phase.

また、第1図(c)に図示したように、更にチタン含有
量を増加した場合には(y=0.065)、一旦誘起された
強誘電相は、電界を増減させるサイクルではもはや反強
誘電相に戻ることはなく、初期歪み状態を得るには、約
50℃まで昇温アニールする必要がある。
Further, as shown in FIG. 1 (c), when the titanium content was further increased (y = 0.065), the ferroelectric phase once induced was no longer the antiferroelectric phase in the cycle of increasing or decreasing the electric field. To get the initial strained state without returning to
It is necessary to anneal up to 50 ℃.

本発明は、上述した「強誘電相の歪み状態を記憶する効
果」を有する第2種材料(y=0.063)及び「昇温によ
り初期歪み状態に戻る効果」を有する第3種材料(y=
0.065)を用いて、変位素子を形成するようにしたもの
である。このように形成された変位素子の一実施例が第
2図に図示されている。同図において、「強誘電相の歪
み状態を記憶する効果」を有する第2種材料(y=0.06
3)からなる焼結バルクから厚さ0.2mm、長さ22mm、幅8m
mの短冊状試料を切りだし、形状記憶性セラミックス素
子1、2を形成し、それぞれ銀電極3、4、5を焼き付
け、2枚の形状記憶性セラミックス素子を貼り合わせ
て、これを保持部材6で保持して変位素子10を作製し
た。
The present invention relates to the second type material (y = 0.063) having the above-mentioned “effect of memorizing the strain state of the ferroelectric phase” and the third type material (y = having the effect of returning to the initial strain state due to temperature rise).
0.065) is used to form the displacement element. An example of a displacement element formed in this way is shown in FIG. In the figure, the second type material (y = 0.06) having the "effect of memorizing the strain state of the ferroelectric phase" is shown.
3) Sintered bulk consisting of 0.2mm thickness, 22mm length, 8m width
A rectangular sample of m is cut out to form shape memory ceramics elements 1 and 2, silver electrodes 3, 4 and 5 are baked, respectively, and two shape memory ceramics elements are bonded together, and the holding member 6 is formed. Then, the displacement element 10 was manufactured by holding.

このような構成において、形状記憶性セラミックス素子
1のみに電極4、5を介して第3図に図示したように約
500Vの電圧を印加する。このとき形状記憶性セラミック
ス素子1は、反強誘電相から強誘電相への相転移により
X方向にデジタル的に変位し、その変位量は、第3図に
図示したように約100μmとなる。その後、印加電圧を
0としても形状記憶性セラミックス素子1は元の状態に
復帰せず、強誘電相を維持し変位したままの状態を保持
しており、形状記憶性を示す。形状記憶性セラミックス
素子を元の状態に戻すためには、約100Vの逆電圧を印加
しなければならない。第3図からこの変位素子10では、
反強誘電相オフ状態と、強誘電相オン状態で、約50μm
以上の変位差が得らる。
In such a structure, as shown in FIG.
Apply a voltage of 500V. At this time, the shape memory ceramics element 1 is digitally displaced in the X direction by the phase transition from the antiferroelectric phase to the ferroelectric phase, and the displacement amount is about 100 μm as shown in FIG. After that, even if the applied voltage is set to 0, the shape-memory ceramic element 1 does not return to the original state, maintains the ferroelectric phase and maintains the displaced state, and exhibits shape-memory characteristics. In order to return the shape memory ceramic element to its original state, a reverse voltage of about 100V must be applied. From FIG. 3, in this displacement element 10,
Approximately 50 μm in anti-ferroelectric phase off state and ferroelectric phase on state
The above displacement difference is obtained.

第4図には、第2図に示した変位素子10をリレーに利用
した実施例が図示されている。同図において、第2図に
図示した構成の変位素子10は、保持部材12に保持されて
ベース11に取り付けられる。所定電界(約500V)を変位
素子10に印加して誘起される変位は、リーフ状のバネ13
を介して伝達され、可動子14をスナップ的に変位させそ
れにより電気接点15をオンにする。このように接点がオ
ン状態になったあと電圧の印加を遮断しても変位素子10
の形状記憶性セラミックスはその強誘電相を維持してお
り、別に保持回路を必要とすることなくオン状態を継続
させることができる。このオン状態を解除しオフとする
には、逆電圧(約−100V)を印加すればよい。このリレ
ーは、−100Vと500Vのステップ電界の印加に対して遅れ
時間10msecでオンオフし、高応答性のキープリレー(駆
動入力電源が遮断したときもオン状態が維持できるリレ
ー)が得られる。
FIG. 4 shows an embodiment in which the displacement element 10 shown in FIG. 2 is used as a relay. In the figure, the displacement element 10 having the configuration shown in FIG. 2 is held by a holding member 12 and attached to the base 11. The displacement induced by applying a predetermined electric field (about 500 V) to the displacement element 10 is the leaf-shaped spring 13
Transmitted through the armature 14 to cause the mover 14 to be displaced in a snap manner, thereby turning on the electric contact 15. Even if the voltage application is interrupted after the contact is turned on in this way, the displacement element 10
The shape-memory ceramic of (1) maintains its ferroelectric phase and can be kept in the ON state without requiring a separate holding circuit. To release this on state and turn it off, a reverse voltage (about -100V) may be applied. This relay turns on and off with a delay time of 10 msec with respect to the application of a step electric field of -100 V and 500 V, and a highly responsive keep relay (a relay that can maintain the ON state even when the drive input power is cut off) is obtained.

第5図には、本発明の他の実施例が図示されている。こ
の実施例の場合、変位素子は、所定電界を印加したとき
誘起される反強誘電相から強誘電相への相転移によりデ
ジタル的に変位し、電界遮断後も強誘電相を維持する強
誘電体形状記憶性セラミックス素子20を複数個の積層し
た積層体30から構成される。この積層体の両側面に各側
面で千鳥状になるように積層体の一段置きに絶縁部21が
配置される。更に、この絶縁部21を通り積層方向に連続
して形成された金属導体部23が形成される。この場合、
形状記憶性セラミックス素子20は、0.2mmの厚さで約40
個積層される。
FIG. 5 shows another embodiment of the present invention. In the case of this embodiment, the displacement element is digitally displaced by the phase transition from the antiferroelectric phase to the ferroelectric phase induced when a predetermined electric field is applied, and maintains the ferroelectric phase even after the electric field is cut off. It is composed of a laminated body 30 in which a plurality of body shape memory ceramic elements 20 are laminated. Insulating portions 21 are arranged on both side surfaces of this laminated body at alternate stages so that each side surface is staggered. Further, a metal conductor portion 23 which is formed continuously through the insulating portion 21 in the stacking direction is formed. in this case,
Shape memory ceramic element 20 has a thickness of 0.2 mm
Individually stacked.

このような構成において、金属導体部23に所定電界(約
500V)を印加すると、積層体30の各形状記憶性セラミッ
クス素子20には、それぞれデジタル的変位が発生し、そ
れが累積されて、積層体はX、X′方向に変位する。そ
の場合、第2図の実施例と同様に、積層体からなる変位
素子は、電界遮断後もその変位状態を継続させることが
できる。また、元の状態に復帰させるには、同様に、例
えば、逆方向に約100Vの電圧を印加するようにする。
In such a configuration, a predetermined electric field (approx.
When 500 V) is applied, digital displacement is generated in each shape memory ceramic element 20 of the laminated body 30 and accumulated, and the laminated body is displaced in the X and X'directions. In that case, similarly to the embodiment of FIG. 2, the displacement element formed of the laminated body can continue its displacement state even after the electric field is cut off. Further, in order to return to the original state, similarly, for example, a voltage of about 100 V is applied in the reverse direction.

第6図は第5図の積層体30からなる変位素子をリレーに
用いた実施例を示す。同図において積層体30は基板31に
取り付けられた押し上げ部32と、基板31に取り付けられ
支持体33と、第1の可動部35に取り付けられた支持体34
を介して押し上げ部36、37の間に支持される。第1の可
動部35はヒンジ部38を介して基板31と接続している。
又、第2の可動部40はヒンジ部39を介して第1の可動部
と接続している。またアーム41はリングバネ43を介して
基板31及びリングバネ42を介して第2の可動部と接続し
ている。
FIG. 6 shows an embodiment in which a displacement element composed of the laminated body 30 of FIG. 5 is used for a relay. In the figure, the laminated body 30 includes a push-up part 32 attached to a substrate 31, a support 33 attached to the substrate 31, and a support 34 attached to the first movable part 35.
It is supported between the push-up parts 36 and 37 via. The first movable portion 35 is connected to the substrate 31 via the hinge portion 38.
Further, the second movable portion 40 is connected to the first movable portion via the hinge portion 39. Further, the arm 41 is connected to the second movable portion via the substrate 31 and the ring spring 42 via the ring spring 43.

このような構成において積層体30に約500Vの電界を印加
すると、積層体の形状記憶性セラミックス素子はX方向
に変位し、この変位は押し上げ部36,37、第1の可動部3
5、第2の可動部40、及びリングバネ42,43を介してアー
ム41に伝達され、アーム41をY方向に変位させる。その
方向には、電気接点44が配置されており、それにより電
気接点はオン状態にされる。このオン状態は、電界遮断
後も各形状記憶性セラミックス素子20が強誘電相を維持
することから、逆バイアスを印加するまで継続させるこ
とができる。従って、第4図に示した実施例と同様なキ
ープリレーを構成することができる。
When an electric field of about 500 V is applied to the laminated body 30 in such a configuration, the shape memory ceramic element of the laminated body is displaced in the X direction, and this displacement is caused by the push-up portions 36, 37 and the first movable portion 3.
5, transmitted to the arm 41 via the second movable portion 40 and the ring springs 42 and 43, and displaces the arm 41 in the Y direction. In that direction, an electrical contact 44 is arranged, which turns it on. Since this shape memory ceramic element 20 maintains the ferroelectric phase even after the electric field is cut off, this on state can be continued until a reverse bias is applied. Therefore, a keep relay similar to the embodiment shown in FIG. 4 can be constructed.

変位素子は「強誘電相の歪み状態を記憶する効果」を有
する第2種材料(y=0.063)に限定されるものではな
く、「昇温により初期歪み状態に戻る効果」を有する第
3種材料(y=0.065)を用いてもよい。この第3種材
料の変位素子を用いたキープリレーの実施例は前記第4
図、第6図と同じく構成することができ、このリレー装
置は、変位素子それ自身が温度を検知し、電気接点をオ
フ状態にすることができる。従ってこのリレー装置は電
気接点オンオフ機構、オン状態保持機構に加へ、更に温
度検出、オフ機構を合せ持つ多機能複合装置として機能
可能なものである。
The displacement element is not limited to the second type material (y = 0.063) having the “effect of memorizing the strain state of the ferroelectric phase”, but the third type having the “effect of returning to the initial strain state due to temperature rise”. A material (y = 0.065) may be used. The embodiment of the keep relay using the displacement element of the third type material is the fourth embodiment.
The relay device can be configured in the same manner as in FIG. 6 and FIG. 6, and in this relay device, the displacement element itself can detect the temperature and turn off the electrical contact. Therefore, this relay device can function as a multifunctional composite device having an electric contact on / off mechanism and an on-state holding mechanism as well as a temperature detection and off mechanism.

[効果] 以上説明したように、本発明では、形状記憶性セラミッ
クス素子に所定電界を印加して形状記憶性セラミックス
素子をデジタル的に変位させ、電界遮断後もその変位状
態を継続させることができるので、強誘電相の歪み状態
を記憶する効果を利用して、少ない消費電力でかつ高応
答性のある変位素子が得られる。
[Effect] As described above, according to the present invention, a predetermined electric field is applied to the shape memory ceramic element to digitally displace the shape memory ceramic element, and the displacement state can be continued even after the electric field is cut off. Therefore, by utilizing the effect of storing the strain state of the ferroelectric phase, a displacement element with low power consumption and high response can be obtained.

この変位素子をリレー装置に利用した場合、電界遮断後
も強誘電相を維持させオン状態を継続させることができ
るので、別に保持回路を用いることなく変位状態を保持
させることができ、高応答性で、小型化された消費電力
の少ないリレー装置を得ることができる。
When this displacement element is used in a relay device, the ferroelectric phase can be maintained and the ON state can be continued even after the electric field is cut off, so the displacement state can be maintained without using a separate holding circuit, and high responsiveness is achieved. Thus, it is possible to obtain a miniaturized relay device with low power consumption.

更に、変位素子として、「昇温により初期歪み状態を得
る」第3種材料(y=0.065)を用いると、電気接点を
オフするのに際し、他の別な温度検出機構を用いること
なく、変位素子それ自身が所定温度を検知し、接点をオ
フすることが可能となり、温度検出リレーを得ることが
できる。
Furthermore, if a third-class material (y = 0.065) that "obtains an initial strain state by temperature rise" is used as the displacement element, the displacement can be achieved without using any other temperature detection mechanism when turning off the electrical contact. The element itself can detect a predetermined temperature and turn off the contact, so that a temperature detection relay can be obtained.

【図面の簡単な説明】[Brief description of drawings]

第1図(a)〜(c)は、本発明に用いられる形状記憶
性セラミックス素子の電界歪み特性を示した特性図、第
2図は、本発明の変位素子の構成を示す構成図、第3図
は、第2図の変位素子の変位特性を示した特性図、第4
図は、第2図の変位素子を用いたリレーの構成を示す斜
視図、第5図(a)、(b)は、形状記憶性セラミック
ス素子を積層体にした実施例の断面図及び斜視図、第6
図は、第5図の積層体を用いたリレーの構成を示す断面
図である。 1、2…形状記憶性セラミックス素子 3、4、5…電極 10…変位素子 20…形状記憶性セラミックス素子 21…絶縁部 22…金属導体部
1 (a) to 1 (c) are characteristic diagrams showing the electric field distortion characteristics of the shape memory ceramics element used in the present invention, and FIG. 2 is a configuration diagram showing the configuration of the displacement element of the present invention. FIG. 3 is a characteristic diagram showing displacement characteristics of the displacement element of FIG.
FIG. 5 is a perspective view showing a configuration of a relay using the displacement element of FIG. 2, and FIGS. 5 (a) and 5 (b) are a sectional view and a perspective view of an embodiment in which a shape memory ceramics element is a laminated body. , Sixth
The drawing is a cross-sectional view showing a configuration of a relay using the laminated body of FIG. 1, 2 ... Shape-memory ceramic element 3, 4, 5 ... Electrode 10 ... Displacement element 20 ... Shape-memory ceramic element 21 ... Insulation part 22 ... Metal conductor part

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】所定電界を印加したとき誘起される反強誘
電相から強誘電相への相転移によりデジタル的に変位
し、電界遮断後も強誘電相を維持する強誘電体形状記憶
性セラミックス素子と、 前記形状記憶性セラミックス素子の両面に形成された電
極とからなり、 前記形状記憶性セラミックス素子に所定電界を印加して
形状記憶性セラミックス素子をデジタル的に変位させ、
電界遮断後もその変位状態を継続させることができるこ
とを特徴とする変位素子。
1. A ferroelectric shape memory ceramic which is digitally displaced by a phase transition from an antiferroelectric phase to a ferroelectric phase induced when a predetermined electric field is applied, and maintains the ferroelectric phase even after the electric field is cut off. An element and electrodes formed on both sides of the shape-memory ceramic element, a predetermined electric field is applied to the shape-memory ceramic element to digitally displace the shape-memory ceramic element,
A displacement element characterized in that the displacement state can be continued even after the electric field is cut off.
【請求項2】所定電界を印加したとき誘起される反強誘
電相から強誘電相への相転移によりデジタル的に変位
し、電界遮断後も強誘電相を維持する第1と第2の強誘
電体形状記憶性セラミックス素子と、 前記第1と第2の形状記憶性セラミックス素子の両面に
形成された電極とからなり、 前記第1と第2の形状記憶性セラミックス素子を積層
し、第1の形状記憶性セラミックス素子に所定電界を印
加して変位させ、電界遮断後もその変位状態を継続させ
ることができることを特徴とする変位素子。
2. A first and second ferroelectric layer, which is digitally displaced by a phase transition from an antiferroelectric phase to a ferroelectric phase induced when a predetermined electric field is applied, and maintains the ferroelectric phase even after the electric field is cut off. A dielectric shape memory ceramics element, and electrodes formed on both surfaces of the first and second shape memory ceramics elements, wherein the first and second shape memory ceramics elements are laminated to form a first A displacement element characterized by being capable of being displaced by applying a predetermined electric field to the shape memory ceramic element of (1) and continuing the displacement state even after the electric field is cut off.
【請求項3】所定電界を印加したとき誘起される反強誘
電相から強誘電相への相転移によりデジタル的に変位
し、電界遮断後も強誘電相を維持する強誘電体形状記憶
性セラミックス素子を複数個積層させた積層体と、 前記積層体の両側面に各側面で千鳥状になるように積層
体の一段置きに配置された絶縁部と、 前記絶縁部を通り積層方向に連続して形成された金属導
体部とからなり、 前記金属導体部に所定電界を印加して積層体を積層方向
に変位させ、電界遮断後もその変位状態を継続させるこ
とができることを特徴とする変位素子。
3. A ferroelectric shape memory ceramic which is digitally displaced by a phase transition from an antiferroelectric phase to a ferroelectric phase induced when a predetermined electric field is applied and maintains the ferroelectric phase even after the electric field is cut off. A laminated body in which a plurality of elements are laminated, an insulating portion arranged on each side surface of the laminated body in a staggered manner on each side surface, and an insulating portion which is continuous in the laminating direction through the insulating portion. Displacement element comprising a metal conductor part formed by applying a predetermined electric field to the metal conductor part to displace the laminate in the stacking direction, and the displacement state can be continued even after the electric field is cut off. .
【請求項4】所定電界を印加したとき誘起される反強誘
電相から強誘電相への相転移によりデジタル的に変位
し、電界遮断後も強誘電相を維持する強誘電体形状記憶
性セラミックス素子と、 前記形状記憶性セラミックス素子のデジタル的変位に従
って可動し、電気接点をオンオフさせる可動子を有し、 所定電界を印加して形状記憶性セラミックス素子をデジ
タル的に変位させ電気接点をオンオフいずれかの平常状
態から反転するとともに、電界遮断後も強誘電相を維持
させその反転状態を継続させることができることを特徴
とするリレー装置。
4. A ferroelectric shape memory ceramic that is digitally displaced by a phase transition from an antiferroelectric phase to a ferroelectric phase induced when a predetermined electric field is applied and maintains the ferroelectric phase even after the electric field is cut off. An element and a mover that moves according to a digital displacement of the shape memory ceramic element to turn on / off an electric contact, and applies a predetermined electric field to digitally displace the shape memory ceramic element to turn on / off the electric contact. A relay device which is capable of reversing from the normal state and maintaining the ferroelectric phase after the electric field is cut off so that the reversal state can be continued.
【請求項5】所定電界を印加したとき誘起される反強誘
電相から強誘電相への相転移によりデジタル的に変位
し、電界遮断後も強誘電相を維持する強誘電体形状記憶
性セラミックス素子を複数個積層させた積層体と、 前記積層体の両側面に各側面で千鳥状になるように積層
体の一段置きに配置された絶縁部と、 前記絶縁部を通り積層方向に連続して形成された金属導
体部と、 前記積層体のデジタル的変位に従って可動し、電気接点
をオンオフさせる可動子を有し、 前記金属導体部に所定電界を印加して積層体を積層方向
に変位させ電気接点をオンオフいずれかの平常状態から
反転するとともに、電界遮断後も強誘電相を維持させそ
の反転状態を継続させることができることを特徴とする
リレー装置。
5. A ferroelectric shape memory ceramic which is digitally displaced by a phase transition from an antiferroelectric phase to a ferroelectric phase induced when a predetermined electric field is applied and maintains the ferroelectric phase even after the electric field is cut off. A laminated body in which a plurality of elements are laminated, an insulating portion arranged on each side surface of the laminated body in a staggered manner on each side surface, and an insulating portion which is continuous in the laminating direction through the insulating portion. And a mover that moves according to the digital displacement of the laminated body to turn on and off electrical contacts, and applies a predetermined electric field to the metallic conductor portion to displace the laminated body in the laminating direction. A relay device capable of reversing an electric contact from a normal state of either on or off, maintaining a ferroelectric phase and continuing the reversal state even after electric field interruption.
【請求項6】所定電界を印加したとき誘起される反強誘
電相から強誘電相への相転移によりデジタル的に変位
し、電界遮断後も強誘電相を維持する強誘電体形状記憶
性セラミックス素子と、 前記形状記憶性セラミックス素子のデジタル的変位に従
って可動し、電気接点をオンオフさせる可動子を有し、 所定電界を印加して形状記憶性セラミックス素子をデジ
タル的に変位させ電気接点をオンオフいずれかの平常状
態から反転するとともに、 所定温度にして電気接点を再び平常状態に復帰させるこ
とができることを特徴とするリレー装置。
6. A ferroelectric shape memory ceramic that is digitally displaced by a phase transition from an antiferroelectric phase to a ferroelectric phase induced when a predetermined electric field is applied and maintains the ferroelectric phase even after the electric field is cut off. An element and a mover that moves according to a digital displacement of the shape memory ceramic element to turn on / off an electric contact, and applies a predetermined electric field to digitally displace the shape memory ceramic element to turn on / off the electric contact. A relay device, which is capable of reversing the normal state and returning the electrical contacts to the normal state again at a predetermined temperature.
【請求項7】所定電界を印加したとき誘起される反強誘
電相から強誘電相への相転移によりデジタル的に変位
し、電界遮断後も強誘電相を維持する強誘電体形状記憶
性セラミックス素子を複数個積層させた積層体と、 前記積層体の両側面に各側面で千鳥状になるように積層
体の一段置きに配置された絶縁部と、 前記絶縁部を通り積層方向に連続して形成された金属導
体部と、 前記積層体のデジタル的変位に従って可動し、電気接点
をオンオフさせる可動子を有し、 前記金属導体部に所定電界を印加して積層体を積層方向
に変位させ電気接点をオンオフいずれかの平常状態から
反転するとともに、 所定温度にして電気接点を再び平常状態に復帰させるこ
とができることを特徴とするリレー装置。
7. A ferroelectric shape memory ceramic that is digitally displaced by a phase transition from an antiferroelectric phase to a ferroelectric phase induced when a predetermined electric field is applied, and maintains the ferroelectric phase even after the electric field is cut off. A laminated body in which a plurality of elements are laminated, an insulating portion arranged on each side surface of the laminated body in a staggered manner on each side surface, and an insulating portion which is continuous in the laminating direction through the insulating portion. And a mover that moves according to the digital displacement of the laminated body to turn on and off electrical contacts, and applies a predetermined electric field to the metallic conductor portion to displace the laminated body in the laminating direction. A relay device capable of reversing an electric contact from a normal state of either on or off and returning the electric contact to a normal state again at a predetermined temperature.
JP14522389A 1989-06-09 1989-06-09 Displacement element and relay device using the same Expired - Lifetime JPH07101588B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14522389A JPH07101588B2 (en) 1989-06-09 1989-06-09 Displacement element and relay device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14522389A JPH07101588B2 (en) 1989-06-09 1989-06-09 Displacement element and relay device using the same

Publications (2)

Publication Number Publication Date
JPH0311516A JPH0311516A (en) 1991-01-18
JPH07101588B2 true JPH07101588B2 (en) 1995-11-01

Family

ID=15380199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14522389A Expired - Lifetime JPH07101588B2 (en) 1989-06-09 1989-06-09 Displacement element and relay device using the same

Country Status (1)

Country Link
JP (1) JPH07101588B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2671175B2 (en) * 1991-11-29 1997-10-29 株式会社タイテック Self-holding display device
JP3551357B2 (en) * 1999-05-17 2004-08-04 セイコーエプソン株式会社 Actuator, inkjet recording head and inkjet printer
JP3470685B2 (en) * 1999-08-16 2003-11-25 日本碍子株式会社 Voltage converter
JP6791350B2 (en) * 2017-03-06 2020-11-25 株式会社村田製作所 Composite oxide

Also Published As

Publication number Publication date
JPH0311516A (en) 1991-01-18

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