JPH07105164B2 - Aluminum alloy electronic and electrical equipment conductive parts - Google Patents
Aluminum alloy electronic and electrical equipment conductive partsInfo
- Publication number
- JPH07105164B2 JPH07105164B2 JP1032465A JP3246589A JPH07105164B2 JP H07105164 B2 JPH07105164 B2 JP H07105164B2 JP 1032465 A JP1032465 A JP 1032465A JP 3246589 A JP3246589 A JP 3246589A JP H07105164 B2 JPH07105164 B2 JP H07105164B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum alloy
- plating
- electrical equipment
- plating layer
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910000838 Al alloy Inorganic materials 0.000 title claims description 26
- 238000007747 plating Methods 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 21
- 238000005452 bending Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 37
- 239000000956 alloy Substances 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 9
- 230000003252 repetitive effect Effects 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910020646 Co-Sn Inorganic materials 0.000 description 1
- 229910020709 Co—Sn Inorganic materials 0.000 description 1
- 229910017818 Cu—Mg Inorganic materials 0.000 description 1
- 229910017876 Cu—Ni—Si Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910009369 Zn Mg Inorganic materials 0.000 description 1
- 229910007573 Zn-Mg Inorganic materials 0.000 description 1
- -1 brighteners Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Landscapes
- Non-Insulated Conductors (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 この発明は個別半導体やIC、LSI等のリードフレーム、
あるいはコネクタやスイッチなどの導電部品として使用
されるアルミニウム合金よりなる電子電気機器導電部品
に関するものである。TECHNICAL FIELD The present invention relates to a lead frame for individual semiconductors, ICs, LSIs, etc.
Alternatively, the present invention relates to a conductive component for electronic and electrical equipment made of an aluminum alloy used as a conductive component such as a connector and a switch.
従来の技術 従来からIC、LSI等のリードフレーム用材料としては、C
u−Fe−Ｐ系合金、Cu−Ni−Si系合金、Cu−Fe−Co−Sn
系合金などのCu系材料、あるいはコバール（Fe−29％Ni
−17％Co）、Fe−42％Ni合金などのFe系材料、さらには
Fe−Ni系合金にAlをクラッドした材料などが使用されて
いる。これらのうち、Fe系材料は、強度、耐熱性、繰返
し曲げ性に優れ、一方Cu系材料は良好な熱伝導性、強度
を有しかつFe系材料と比べて安価であるという特徴を有
している。Conventional technology Conventionally, C has been used as a material for lead frames such as ICs and LSIs.
u-Fe-P alloy, Cu-Ni-Si alloy, Cu-Fe-Co-Sn
Cu-based materials such as alloys or Kovar (Fe-29% Ni
-17% Co), Fe-42% Ni alloys and other Fe-based materials, and
Materials such as Fe-Ni alloys with Al clad are used. Of these, the Fe-based materials are excellent in strength, heat resistance, and repetitive bendability, while the Cu-based materials have good thermal conductivity and strength, and are cheaper than the Fe-based materials. ing.
一方、最近ではCu系材料よりもさらに低コスト化を図り
得る材料として、アルミニウム合金をリードフレームに
使用することが検討されており、既に特開昭62−96641
号、特開昭62−96638号、特開昭62−96644号等によって
提案されている。On the other hand, recently, the use of an aluminum alloy for a lead frame has been studied as a material that can further reduce the cost as compared with a Cu-based material, and it has already been disclosed in JP-A-62-96641.
JP-A-62-96638, JP-A-62-96644 and the like.
発明が解決しようとする課題 一般にリードフレーム等の導電部品は半田によって回路
や相手部材に接合されることが多く、そこで従来のFe系
材料やCu系材料からなるリードフレーム等の導電部品に
おいては、先ず下地メッキとして極く薄いCuメッキを施
し、その上にSnメッキや半田メッキを電気メッキや溶融
浸漬メッキにより施して、半田による接合を容易にして
接合自体を健全なものとすることが行なわれている。Problems to be Solved by the Invention Generally, conductive components such as lead frames are often bonded to a circuit or a mating member by soldering, and thus in conductive components such as lead frames made of conventional Fe-based materials or Cu-based materials, First, an extremely thin Cu plating is applied as the base plating, and then Sn plating or solder plating is applied by electroplating or hot dip plating to facilitate soldering and make the bonding itself sound. ing.
一方アルミニウム合金の場合も、下地処理メッキを行な
わなければ、Snメッキや半田がのらない。すなわちアル
ミニウム合金材料は、緻密な酸化皮膜が表面に生成され
るため、半田や錫が濡れにくく、原子同士の接合ができ
ないためであり、そこでアルミニウム合金を用いる場
合、一般にはNiメッキを施してリードフレーム等の導電
部品として使用することが考えられている。但し、アル
ミニウム合金に直接Niメッキを施すことは困難であるか
ら、通常はNiメッキの前処理としてジンケート処理を施
してアルミニウム表面にZnを被覆し、これによりアルミ
ニウムの酸化皮膜が形成されない状態にしておいてか
ら、無電解メッキや電解メッキによりNiメッキを施すの
が通常である。On the other hand, also in the case of aluminum alloy, Sn plating and solder will not be deposited if the undertreatment plating is not performed. In other words, an aluminum alloy material has a dense oxide film formed on the surface, so solder and tin are difficult to wet and atoms cannot be joined together.When an aluminum alloy is used there, nickel plating is generally applied to lead. It is considered to be used as a conductive component such as a frame. However, it is difficult to apply Ni plating directly to an aluminum alloy, so usually zincate treatment is performed as a pretreatment of Ni plating to coat the aluminum surface with Zn, so that an oxide film of aluminum is not formed. After that, it is usual to perform Ni plating by electroless plating or electrolytic plating.
ところでNiメッキ層は半田と濡れやすく、したがってア
ルミニウム合金を基材として表面にNiメッキ層を形成し
たリードフレーム等の電気部品は半田付け性も良好とな
る。しかしながらNiメッキ層を形成したアルミニウム合
金製のリードフレームについて本発明者等がさらに実用
化のための実験・検討を進めたところ、次のような問題
があることが判明した。By the way, the Ni plating layer easily wets the solder, and therefore, the solderability of the electric component such as the lead frame having the Ni plating layer formed on the surface of the aluminum alloy as the base material also has good solderability. However, when the present inventors further conducted experiments and studies for practical use of the lead frame made of an aluminum alloy on which a Ni plating layer was formed, the following problems were found.
すなわちリードフレームのアウターリード部は、ICやLS
I等の半導体装置に組込んだ後、下方へ折曲げた状態と
されるのが通常であり、またその半導体装置を回路基板
等に実装する過程ではアウターリード部の曲げを戻した
り再び曲げを与えたりすることが多い。したがってリー
ドフレームのアウターリード部は繰返し曲げ性に優れて
いること、すなわち繰返し曲げを与えても亀裂が発生し
たり折損したりしないことが要求される。ところがアル
ミニウム合金基材の表面にNiメッキ層を形成したリード
フレームでは、基材として繰返し曲げ性に優れた高強度
のアルミニウム合金を用いても、繰返し曲げ性が低くな
ってしまうという問題があることが判明した。That is, the outer lead part of the lead frame is
After being assembled in a semiconductor device such as I, it is normally bent downward, and in the process of mounting the semiconductor device on a circuit board, etc., the outer lead part may be unbent or bent again. I often give it. Therefore, the outer lead portion of the lead frame is required to have excellent repetitive bendability, that is, it should not crack or break even when subjected to repetitive bending. However, lead frames with a Ni plating layer formed on the surface of an aluminum alloy base material have a problem that even if a high-strength aluminum alloy with excellent repeatability is used as the base material, the repeatability becomes low. There was found.
この発明は以上の事情を背景としてなされたもので、リ
ードフレームのごとく、曲げが与えられる部分を有する
アルミニウム合金製の電子電気機器導電部品として、繰
返し曲げ性と半田付け性とがともに優れた導電部品を提
供することを目的とするものである。The present invention has been made in view of the above circumstances, and as an electronic / electrical device conductive component made of an aluminum alloy having a portion to which bending is applied, such as a lead frame, has excellent repeated bending property and solderability. The purpose is to provide parts.
課題を解決するための手段 本発明者等は前述の問題を解決するべく、アルミニウム
合金を基材としかつNiメッキを施した導電部品について
鋭意研究を重ねた結果、繰返し曲げ性がNiメッキ層の厚
みに相関しており、Niメッキ層の厚みを適切な範囲内と
することによって繰返し曲げ性と半田付け性とを両立さ
せ得ることを見出し、この発明をなすに至った。Means for Solving the Problems In order to solve the above problems, the inventors of the present invention have conducted extensive studies on a conductive component that has an aluminum alloy as a base material and is plated with Ni. The present invention has been accomplished by finding that the Ni plating layer has a correlation with the thickness, and that the bendability and the solderability can be made compatible by setting the thickness of the Ni plating layer within an appropriate range.
具体的には、この発明は、曲げ加工が与えられる部分
（例えばリードフレームのアウターリード部）を有する
電子電気機器導電部品において、基材がアルミニウム合
金からなり、少なくとも前記曲げ加工が与えられる部分
を含む領域の表面にNiメッキ層が形成されており、かつ
そのNiメッキの厚みが0.01〜2.0μｍの範囲内とされて
いることを特徴とするものである。Specifically, in the present invention, in a conductive part for electronic and electric equipment having a portion to which bending is applied (for example, an outer lead portion of a lead frame), a base material is made of an aluminum alloy, and at least a portion to which the bending is applied is provided. A Ni plating layer is formed on the surface of the region containing the Ni plating, and the thickness of the Ni plating is within the range of 0.01 to 2.0 μm.
作用 先ず繰返し曲げ性がNiメッキ層の厚みに関係していると
の本発明者等の知見について説明する。Action First, the findings of the present inventors that the cyclic bendability is related to the thickness of the Ni plating layer will be described.
本発明者等の実験によれば、アルミニウム合金板にNiメ
ッキを行なって曲げ加工を行なえば、先ずNiメッキ層に
割れが生じ、そのNiメッキ層が割れた部分において内側
のアルミニウム合金表面に応力集中が生じて、アルミニ
ウム合金内部にも割れが伝播し、繰返し曲げ性が低下し
てしまうことが判明した。According to the experiments of the present inventors, if the aluminum alloy plate is subjected to Ni plating and bending, cracks are first generated in the Ni plating layer, and stress is applied to the inner aluminum alloy surface at the portion where the Ni plating layer is cracked. It was found that the concentration occurs, the crack propagates inside the aluminum alloy, and the repetitive bendability deteriorates.
一般にNiメッキ時において燐や光沢剤等の添加物が添加
されればNiメッキ層が硬くなって延性が低下することが
知られているが、これらの添加物は繰返し曲げ性への影
響は少ない。繰返し曲げ性に最も影響するのはNiメッキ
層の厚みであり、Niメッキを施しても繰返し曲げ性を良
好にするためにはNiメッキ層の厚みを2.0μｍ以下とす
る必要がある。Niメッキ層の厚みが2.0μｍを越えれば
前述のようにNiメッキ層に割れが生じてこれによりアル
ミニウム合金にも割れが伝播し、繰返し曲げ性が低くな
る、Niメッキ層の厚みは薄いほど繰返し曲げ性が良好と
はなるが、0.01μｍより薄くなればメッキの均一性を損
ないやすくなり、その後の半田付けで不良が生じやすく
なる。したがってアルミニウム合金を基材としかつNiメ
ッキ層を形成した電子電気機器用導電部材として、繰返
し曲げ性が良好でしかも半田付け性も良好とするために
は、Niメッキ層の厚みを0.01〜2.0μｍの範囲内とする
必要がある。It is generally known that the addition of phosphorus, brighteners, and other additives during Ni plating will harden the Ni plating layer and reduce ductility, but these additives have little effect on repetitive bendability. . The thickness of the Ni plating layer has the greatest effect on the repetitive bendability, and the thickness of the Ni plating layer must be 2.0 μm or less in order to improve the repetitive bendability even when Ni plating is performed. If the thickness of the Ni plating layer exceeds 2.0 μm, cracks will occur in the Ni plating layer as described above, and the cracks will propagate to the aluminum alloy as well, and the bendability will decrease repeatedly. Although the bendability is good, if the thickness is less than 0.01 μm, the uniformity of plating is likely to be impaired, and defects are likely to occur in the subsequent soldering. Therefore, in order to have good repeated bending property and good solderability as a conductive member for electronic and electrical equipment using an aluminum alloy as a base material and having a Ni plating layer formed, the thickness of the Ni plating layer is 0.01 to 2.0 μm. Must be within the range.
なおこの発明の導電部材における基材のアルミニウム合
金としては、リードフレーム等の電子電気機器導電部材
に適用可能なものであれば任意のものを用いることがで
き、例えばAl−Mg系合金、Al−Mn系合金、Al−Mg−Mn系
合金、Al−Mg−Mn−Zr系合金、Al−Cu−Mg系合金、Al−
Zn−Mg系合金等を用いることができる。As the aluminum alloy of the base material in the conductive member of the present invention, any one can be used as long as it is applicable to a conductive member of an electronic / electrical device such as a lead frame, for example, Al-Mg alloy, Al- Mn-based alloy, Al-Mg-Mn-based alloy, Al-Mg-Mn-Zr-based alloy, Al-Cu-Mg-based alloy, Al-
A Zn-Mg based alloy or the like can be used.
実 施 例 第１表に示すような成分組成、強度を有する４種類の0.
27mm厚のアルミニウム合金圧延板について、第２表に示
すような種々の厚みのNiメッキを施した。なおNiメッキ
の下地処理としては公知の酸洗−ダブルジンケート処理
を行なった。またNiメッキは、ワット浴を用いて、カソ
ード電流4A/dm2、浴温50℃、浴pHにて電解メッキにより
行なった。Practical example Four kinds of 0.
A 27 mm thick rolled aluminum alloy plate was plated with various thicknesses of Ni as shown in Table 2. As the surface treatment for Ni plating, a known pickling-double zincate treatment was performed. The Ni plating was performed by electrolytic plating using a Watt bath at a cathode current of 4 A / dm 2 , a bath temperature of 50 ° C. and a bath pH.
Niメッキ後の各板について、90゜繰返し曲げ試験および
溶融メッキによる半田付け性試験を行なった。その結果
を第２表中に示す。Each plate after Ni plating was subjected to a 90 ° repeated bending test and a solderability test by hot dipping. The results are shown in Table 2.
なお90゜繰返し曲げ試験は、0.2mmRの治具を用い、90゜
曲げた時を１回と数え、その状態から再び０゜に戻した
時を２回と数え、以下同様にして割れ発生に至るまでの
回数を数えて評価した。一般にはこのような評価で３回
以上の繰返し曲げ性が必要とされる。In the 90 ° cyclic bending test, a jig of 0.2mmR was used, the time of 90 ° bending was counted as 1 time, and the time of returning to 0 ° from that state was counted as 2 times. The number of times to reach was counted and evaluated. Generally, such evaluation requires repeatability of bending 3 times or more.
また半田付け性については、Sn60wt％−Pb40wt％半田を
用い、弱活性フラックスを用いて溶融メッキを施した後
の半田層の表面外観を調査し、半田が均一に濡れている
か否か、また半田層にピットが存在するか否かによって
評価した。Regarding solderability, Sn60wt% -Pb40wt% solder was used, and the surface appearance of the solder layer after hot-dip plating with weakly active flux was examined to see if the solder was evenly wet, It was evaluated by whether or not pits were present in the layer.
第２表から明らかなように、いずれのアルミニウム合金
を基材として用いた場合にも、Niメッキ層の厚みを0.01
〜2.0μｍの範囲内とすることによって良好な繰返し曲
げ性と半田付け性を確保することができた。 As is clear from Table 2, the Ni plating layer thickness is 0.01% when any aluminum alloy is used as the base material.
By setting the thickness within the range of up to 2.0 μm, good repetitive bendability and solderability could be secured.
なお実施例では電解Niメッキの場合について示したが、
無電解Niメッキの場合にもNiメッキ層を0.01〜2.0μｍ
の範囲内とすることによって同様な効果が得られること
は勿論である。In the examples, the case of electrolytic Ni plating is shown,
Even in the case of electroless Ni plating, the Ni plating layer is 0.01-2.0 μm
It goes without saying that the same effect can be obtained by setting the ratio within the range.
発明の効果 この発明の電子電気機器導電部材は、リードフレームな
どの如く曲げが加えられる部分を有しかつ基材に安価な
アルミニウム合金を用いた導電部品として、半田付け性
が優れると同時に繰返し曲げ性に優れている。したがっ
てこの発明によれば、リードフレーム等の導電部品にア
ルミニウム合金を実際に適用することが可能となり、リ
ードフレーム等の低コスト化を進めることが可能とな
る。EFFECT OF THE INVENTION The conductive member of the electronic / electrical device of the present invention has a portion to which bending is applied such as a lead frame and has excellent solderability as well as repeated bending as a conductive component using an inexpensive aluminum alloy as a base material. It has excellent properties. Therefore, according to the present invention, the aluminum alloy can be actually applied to the conductive parts such as the lead frame, and the cost reduction of the lead frame and the like can be promoted.
Claims (1)
気機器導電部品において、基材がアルミニウム合金から
なり、少なくとも前記曲げ加工が与えられる部分を含む
領域の表面にNiメッキ層が形成されており、かつそのNi
メッキの厚みが0.01〜2.0μｍの範囲内とされているこ
とを特徴とするアルミニウム合金製電子電気機器導電部
品。1. In a conductive part for electronic and electrical equipment having a portion to which a bending process is applied, a base material is made of an aluminum alloy, and a Ni plating layer is formed on a surface of a region including at least the portion to which the bending process is applied. , And that Ni
A conductive component for electronic and electrical equipment made of aluminum alloy, characterized in that the plating thickness is within the range of 0.01 to 2.0 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1032465A JPH07105164B2 (en) | 1989-02-10 | 1989-02-10 | Aluminum alloy electronic and electrical equipment conductive parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1032465A JPH07105164B2 (en) | 1989-02-10 | 1989-02-10 | Aluminum alloy electronic and electrical equipment conductive parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02213004A JPH02213004A (en) | 1990-08-24 |
| JPH07105164B2 true JPH07105164B2 (en) | 1995-11-13 |
Family
ID=12359719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1032465A Expired - Lifetime JPH07105164B2 (en) | 1989-02-10 | 1989-02-10 | Aluminum alloy electronic and electrical equipment conductive parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07105164B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW457674B (en) * | 1999-03-15 | 2001-10-01 | Texas Instruments Inc | Aluminum leadframes for semiconductor devices and method of fabrication |
| US6747343B2 (en) | 2000-03-08 | 2004-06-08 | Texas Instruments Incorporated | Aluminum leadframes with two nickel layers |
| JP4593013B2 (en) * | 2001-06-04 | 2010-12-08 | 古河電気工業株式会社 | Aluminum alloy conductor |
| JP4918621B1 (en) * | 2010-09-24 | 2012-04-18 | 神鋼リードミック株式会社 | Electronic component materials |
| JP5637965B2 (en) * | 2011-10-20 | 2014-12-10 | 株式会社神戸製鋼所 | Aluminum strip for lead frame and lead frame strip |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62291951A (en) * | 1986-06-11 | 1987-12-18 | Kobe Steel Ltd | Lead frame with oxidation resistant nickel plating resistant to release of solder |
-
1989
- 1989-02-10 JP JP1032465A patent/JPH07105164B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02213004A (en) | 1990-08-24 |
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