JPH07105342B2 - Method for manufacturing compound semiconductor - Google Patents
Method for manufacturing compound semiconductorInfo
- Publication number
- JPH07105342B2 JPH07105342B2 JP61008473A JP847386A JPH07105342B2 JP H07105342 B2 JPH07105342 B2 JP H07105342B2 JP 61008473 A JP61008473 A JP 61008473A JP 847386 A JP847386 A JP 847386A JP H07105342 B2 JPH07105342 B2 JP H07105342B2
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- compound
- substrate
- present
- substrate surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000001875 compounds Chemical class 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 6
- 230000007935 neutral effect Effects 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は分子線エピタキシー法による化合物半導体の製
造方法に関するものである。The present invention relates to a method for producing a compound semiconductor by a molecular beam epitaxy method.
周期律表のII族とVI族との化合物半導体、例えばZnSは
禁制帯幅が3.5eV、またZnSeでは2.7eV程度であって、青
色発光素子として期待されている。このためZnSeは従来
高抵抗のZnSe結晶にアクセプタとして窒素をイオン注入
法により打込んで形成する方法、或いは分子線エピタキ
シー法によってZn、Se分子線と共にＰの分子線を基板に
投射することによりリンをドーピングして形成する方法
が行われている。Compound semiconductors of Group II and Group VI of the periodic table, such as ZnS, have a bandgap of 3.5 eV, and ZnSe has a bandgap of about 2.7 eV, and is expected as a blue light emitting device. Therefore, ZnSe is conventionally formed by implanting nitrogen as an acceptor into a high-resistance ZnSe crystal by an ion implantation method, or by projecting a molecular beam of P together with Zn and Se molecular beams onto a substrate by a molecular beam epitaxy method. The method of forming by doping is performed.
しかし前者の方法ではイオン打込みの際イオンによって
基板が損傷され易く、後者の方法では低抵抗のＰ型結晶
が得難いという問題があった。However, the former method has a problem that the substrate is easily damaged by the ions during the ion implantation, and the latter method has difficulty in obtaining a P-type crystal having a low resistance.
本発明は係る事情に鑑みなされたものであって、その目
的とするところは電気的に中性であり、且つ化学的に活
性な粒子、即ちラジカルなビームを用いる分子線エピタ
キシー法によって低抵抗の化合物半導体を容易に得られ
る化合物半導体の製造方法を提供するにある。The present invention has been made in view of the above circumstances, and an object of the present invention is to electrically neutralize and chemically active particles, that is, a low resistance by a molecular beam epitaxy method using a radical beam. Another object of the present invention is to provide a method for producing a compound semiconductor, which can easily obtain a compound semiconductor.
本発明に係る化合物半導体の製造方法は、化合物半導体
を構成する２以上の元素を夫々分子線として基板面に投
射し、基板面にこれら元素の化合物をエピタキシャル成
長させる過程で、不純物用原料ガスをプラズマ化し、そ
の構成元素を電気的に中性であり、且つ化学的に活性な
粒子ビームとして基板面に投射し、化合物にドーピング
することを特徴とする。The method for producing a compound semiconductor according to the present invention is a process in which two or more elements constituting a compound semiconductor are projected as molecular beams on a substrate surface and a compound of these elements is epitaxially grown on the substrate surface. It is characterized by projecting the constituent elements into a particle beam that is electrically neutral and chemically active and then doping the compound.
本発明方法にあっては不純物を電気的に中性であり、且
つ化学的に活性な粒子としてドーピングすることとして
いるから、その化学的なエネルギーを利用して基板を損
傷することなく高能率のドーピングが容易に行い得る。In the method of the present invention, the impurities are electrically neutral and are doped as chemically active particles. Therefore, the chemical energy is utilized to achieve high efficiency without damaging the substrate. Doping can be done easily.
以下本発明をその実施状態を示す図面に基づき具体的に
説明する。第１図は本発明方法をII族とVI族との化合物
半導体であるZnSeの製造に適用している状態を示す分子
線エピタキシャル装置の模式図、第２図は不純物用の原
料ガスセルの拡大断面図であり、図中１はグロースチャ
ンバ、2,3,4はセル、Ｓは基板を示している。チャンバ
１はその周壁の一部に図示しない排気装置に連結された
超高真空排気口1aを備えており、必要に応じて10-10〜1
0-11程度の真空度に設定されるようになっている。チャ
ンバ１内には基板Ｓが図示しないホルダに装着されて各
セル2,3,4の設置側に向けて配置されている。ホルダに
はヒータが備えられており、基板Ｓを所定温度に加熱維
持し得るようになっている。Hereinafter, the present invention will be specifically described with reference to the drawings showing its implementation state. FIG. 1 is a schematic view of a molecular beam epitaxial device showing a state in which the method of the present invention is applied to the production of ZnSe which is a compound semiconductor of group II and group VI, and FIG. 2 is an enlarged cross section of a raw material gas cell for impurities. In the figure, 1 is a growth chamber, 2 and 3 and 4 are cells, and S is a substrate. The chamber 1 is provided with an ultra-high vacuum exhaust port 1a connected to an exhaust device (not shown) on a part of its peripheral wall, and 10 -10 to 1 -10 as required.
The degree of vacuum is set to about 0 -11 . In the chamber 1, a substrate S is mounted on a holder (not shown) and is arranged toward the installation side of each cell 2, 3, 4. The holder is provided with a heater so that the substrate S can be heated and maintained at a predetermined temperature.
セル2,3,4はチャンバ１の周壁に開口部を基板Ｓ側に向
けた状態で夫々固定されており、セル２には金属亜鉛
が、またセル３には金属セレンが収容され、抵抗加熱に
よって所定温度に加熱され、基板Ｓ表面に向けて夫々Z
n,Seを分子線として投射するようになっている。The cells 2, 3 and 4 are fixed to the peripheral wall of the chamber 1 with their openings facing the substrate S side. The cell 2 contains metallic zinc and the cell 3 contains metallic selenium, and the resistance heating is performed. Are heated to a predetermined temperature by the Z
It is designed to project n and Se as molecular beams.
一方セル４は第２図に示す如くディスチャージ・チャン
バ５とトランスポートチューブ６の後端とが相互の間
を、オリフィス（第１オリフィスという、直径1mm程
度）7aを備えた電極を兼ねる隔壁7bで隔てられた状態で
連設され、またトランスポートチューブ６の前端は同じ
くオリフィス（第２オリフィスという、直径3mm程度）7
cを備えた隔壁7dにて隔てられた状態でグロースチャン
バ１内に臨ませてある。ディスチャージ・チャンバ５は
その周壁にガスの導入管5a、排気管5bが接続され、また
内部には基端部側から電極を兼ねる隔壁7bのオリフィス
7a近傍にまで電極８を延在せしめて隔壁7bと対向配設さ
れている。導入管5aはホスフィン等のガスタンクに連結
され、また排気管5bには図示しないロータリポンプ、メ
カニカルブースターポンプが連結されており、導入管5a
からはホスフィンが供給され、また排気管5bからはディ
スチャージ・チャンバ５内を0.1〜0.5Torr程度の真空度
に設定維持するよう排気を行うようになっている。On the other hand, as shown in FIG. 2, the cell 4 is a partition wall 7b that also serves as an electrode having an orifice (a first orifice, about 1 mm in diameter) 7a between the discharge chamber 5 and the rear end of the transport tube 6. The front end of the transport tube 6 is similarly provided with an orifice (a second orifice, which has a diameter of about 3 mm).
It faces the inside of the growth chamber 1 in a state of being separated by a partition wall 7d provided with c. The discharge chamber 5 is connected to a gas introduction pipe 5a and an exhaust pipe 5b on its peripheral wall, and the orifice of a partition wall 7b which also serves as an electrode is provided inside from the base end side.
The electrode 8 is extended to the vicinity of 7a and is arranged so as to face the partition wall 7b. The introduction pipe 5a is connected to a gas tank such as phosphine, and the exhaust pipe 5b is connected to a rotary pump and a mechanical booster pump (not shown).
Is supplied with phosphine, and the exhaust pipe 5b exhausts the discharge chamber 5 so that the discharge chamber 5 is maintained at a vacuum degree of about 0.1 to 0.5 Torr.
電極7d、及び第１オリフィス7aを備えた電極を兼ねる隔
壁7bは図示しない高周波電源に接続されており、これに
よって高周波電圧を印加され、ディスチャージ・チャン
バ５内に導入されたホスフィンをプラズマ化すると共に
これをプラズマクラッキングし、電気的に中性で、且つ
化学的に活性なリンの単分子線、即ちラジカルビームを
発生せしめるようになっている。The electrode 7d and the partition wall 7b which also serves as an electrode having the first orifice 7a are connected to a high frequency power source (not shown), by which a high frequency voltage is applied to turn the phosphine introduced into the discharge chamber 5 into plasma. This is plasma-cracked to generate a monomolecular beam of phosphorus that is electrically neutral and chemically active, that is, a radical beam.
トランスポートチューブ６の中間部側壁には排気管6aが
接続されており、この排気管6aには図示しないロータリ
ーポンプ、拡散ポンプが接続され、これらによってトラ
ンスポートチューブ６内を常時10-4Torr程度の真空度に
設定維持するようになっている。このようにディスチャ
ージ・チャンバ内は0.1〜0.5Toor程度に、またトランス
ポートチューブ６内は10-4Torr程度に、そしてグロース
チャンバ１内はバックグランド圧力を10-10Torr程度、
稼働中は10-7〜10-8程度に維持される結果、このような
差動排気によってディスチャージ・チャンバ５内で生じ
たリンのラジカルビームはトランスポートチューブ６内
に吸引された後、更にグロースチャンバ１内に移動せし
められて基板Ｓに照射せしめられることとなる。An exhaust pipe 6a is connected to an intermediate side wall of the transport tube 6, and a rotary pump and a diffusion pump (not shown) are connected to the exhaust pipe 6a, so that the inside of the transport tube 6 is constantly kept at about 10 -4 Torr. It is designed to maintain the vacuum level. Thus, the discharge chamber has a pressure of about 0.1 to 0.5 Torr, the transport tube 6 has a pressure of about 10 -4 Torr, and the growth chamber 1 has a background pressure of about 10 -10 Torr.
As a result of being maintained at about 10 -7 to 10 -8 during operation, the phosphorus radical beam generated in the discharge chamber 5 by such differential evacuation is sucked into the transport tube 6 and then further grown. The substrate S is moved into the chamber 1 and irradiated onto the substrate S.
而して上述の如き本発明方法にあっては基板Ｓとして例
えばGaAsを用い、これにセル2,3からZn分子線、Se分子
線を投射して、化合物であるZnSeをエピタキシャル成長
させる過程で、所定のタイミングでセル４からリンのラ
ジカルビームを化合物上に投射し、ドーピングさせる。
これによって、リンを効果的に、しかも効率よくドープ
させることができて、低抵抗のｐ−ｎ接合を有する高効
率の発光素子であるZnSe等の化合物半導体を容易に製造
することが可能となる。In the method of the present invention as described above, for example, GaAs is used as the substrate S, and Zn molecular beams and Se molecular beams are projected from the cells 2 and 3 on the substrate S to epitaxially grow the compound ZnSe. At a predetermined timing, a radical beam of phosphorus is projected from the cell 4 onto the compound to dope.
As a result, phosphorus can be doped effectively and efficiently, and a compound semiconductor such as ZnSe, which is a highly efficient light emitting device having a low resistance pn junction, can be easily manufactured. .
なお上述の実施例においては周期律表のII族とVI族との
化合物半導体につき説明したが、何らこれに限るもので
はなく、他の化合物半導体の製造にも適用し得ることは
勿論である。またZnSeに限らずZnS等についても適用し
得ることも言うまでもない。Although the compound semiconductors of Group II and Group VI of the periodic table have been described in the above embodiments, the present invention is not limited to this, and it goes without saying that the present invention can be applied to the production of other compound semiconductors. It goes without saying that the present invention can be applied not only to ZnSe but also to ZnS and the like.
以上の如く本発明方法にあっては不純物用原料ガスを電
気的に中性であり、且つ化学的に活性な粒子、所謂ラジ
カルなビームとして化合物にドーピングすることとして
いるから化合物中への付着確率が大きく、化合物中への
不純物の取り込みが容易となり、しかも基板自体に与え
る損傷も少ないなど本発明は優れた効果を奏するもので
ある。As described above, in the method of the present invention, the impurity source gas is electrically neutral and chemically active particles, that is, a so-called radical beam is doped into the compound. The present invention has excellent effects such as large size, easy incorporation of impurities into the compound, and little damage to the substrate itself.
第１図は本発明方法の実施状態を示す分子線エピタキシ
ャル装置の模式図、第２図は同じく不純物のガスセルの
部分拡大図である。 １……グロースチャンバ、2,3,4……セル、５……ディ
スチャージ・チャンバ、６……トランスポートチュー
ブ、Ｓ……基板FIG. 1 is a schematic view of a molecular beam epitaxial device showing an embodiment of the method of the present invention, and FIG. 2 is a partially enlarged view of a gas cell of the same impurity. 1 ... Growth chamber, 2,3,4 ... cell, 5 ... Discharge chamber, 6 ... Transport tube, S ... Substrate
Claims (1)
々分子線として基板面に投射し、基板面にこれら元素の
化合物をエピタキシャル成長させる過程で、不純物用原
料ガスを高周波電界に晒してプラズマ化し、その構成元
素を電気的に中性であり、且つ化学的に活性な粒子ビー
ムとして基板面に投射し、前記化合物にドーピングする
ことを特徴とする化合物半導体の製造方法。1. In the process of projecting two or more elements constituting a compound semiconductor as a molecular beam on a substrate surface and epitaxially growing a compound of these elements on the substrate surface, an impurity source gas is exposed to a high frequency electric field to form plasma. A method for producing a compound semiconductor, characterized in that the constituent element is projected onto a substrate surface as a particle beam which is electrically neutral and chemically active, and the compound is doped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61008473A JPH07105342B2 (en) | 1986-01-17 | 1986-01-17 | Method for manufacturing compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61008473A JPH07105342B2 (en) | 1986-01-17 | 1986-01-17 | Method for manufacturing compound semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62165940A JPS62165940A (en) | 1987-07-22 |
| JPH07105342B2 true JPH07105342B2 (en) | 1995-11-13 |
Family
ID=11694082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61008473A Expired - Fee Related JPH07105342B2 (en) | 1986-01-17 | 1986-01-17 | Method for manufacturing compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07105342B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06104600B2 (en) * | 1987-05-30 | 1994-12-21 | 松下電器産業株式会社 | Semiconductor manufacturing method |
| JPH07517B2 (en) * | 1987-05-30 | 1995-01-11 | 松下電器産業株式会社 | Semiconductor crystal thin film manufacturing equipment |
| JPH0323289A (en) * | 1989-06-16 | 1991-01-31 | Nec Corp | Molecular-beam crystal growth device and crystal growth method |
| US5248631A (en) * | 1990-08-24 | 1993-09-28 | Minnesota Mining And Manufacturing Company | Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals |
| JPH0653257A (en) * | 1992-06-05 | 1994-02-25 | Nec Corp | Impurity doping method and carrier concentration control method by impurity doping |
| CN114038948A (en) * | 2021-05-11 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Red light epitaxial layer, etching repair method thereof, LED chip and electronic equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60170942A (en) * | 1984-02-16 | 1985-09-04 | Sanyo Electric Co Ltd | Molecular beam epitaxial growth method for ii-vi group compound semiconductor |
| JPS61117199A (en) * | 1984-11-08 | 1986-06-04 | Nec Corp | Method for growing crystal |
-
1986
- 1986-01-17 JP JP61008473A patent/JPH07105342B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62165940A (en) | 1987-07-22 |
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