JPH07107894B2 - Annealing method for polycrystalline thin film substrate - Google Patents
Annealing method for polycrystalline thin film substrateInfo
- Publication number
- JPH07107894B2 JPH07107894B2 JP61141944A JP14194486A JPH07107894B2 JP H07107894 B2 JPH07107894 B2 JP H07107894B2 JP 61141944 A JP61141944 A JP 61141944A JP 14194486 A JP14194486 A JP 14194486A JP H07107894 B2 JPH07107894 B2 JP H07107894B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- polycrystalline thin
- polycrystalline
- annealing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Recrystallisation Techniques (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、絶縁体基板上に形成された多結晶シリコン等
の多結晶薄膜を、紫外線及び赤外線加熱することにより
アニールし、膜の電気特性を改善するための熱処理温度
を下げ、高品質の電子材料を提供するためのアニール方
法に関するものである。Description: TECHNICAL FIELD The present invention improves the electrical characteristics of a film by annealing a polycrystalline thin film such as polycrystalline silicon formed on an insulating substrate by heating with ultraviolet rays and infrared rays. The present invention relates to an annealing method for lowering the heat treatment temperature for providing a high quality electronic material.
従来の技術 非晶質表面を有する基板上の多結晶材料を利用した素子
は、シリコン，ガリウム砒素等のように結晶基板に作成
した素子に比較して、その電気特性は劣り、信頼性，諸
特性のバラツキについても劣るが、最近この多結晶材料
をアニールにより再結晶化し、三次元素子を実現する試
みが盛んである。アニールの方法としては、従来、電子
ビーム、レーザービーム等のエネルギービームを基材表
面を走査しながら照射する再結晶化法が行なわれてい
る。又、再結晶化させなくとも、基板薄膜のアニール
が、マイクロ波，赤外線あるいは紫外線の照射により行
なわれ、ある程度の諸特性の改善が行なわれている。2. Description of the Related Art An element using a polycrystalline material on a substrate having an amorphous surface has inferior electric characteristics to an element formed on a crystalline substrate such as silicon and gallium arsenide, and has a high reliability and various electrical characteristics. Although the variation in characteristics is also inferior, recently attempts have been made to realize a three-dimensional device by recrystallizing this polycrystalline material by annealing. As a method of annealing, conventionally, a recrystallization method has been performed in which an energy beam such as an electron beam or a laser beam is irradiated while scanning the surface of the base material. Further, even if it is not recrystallized, the substrate thin film is annealed by irradiation with microwaves, infrared rays, or ultraviolet rays, and various characteristics are improved to some extent.
発明が解決しようとする問題点 しかしながら、従来より行なわれている再結晶化のため
の加熱方法はエネルギービームを走査するものであり、
大面積の処理を行なうためには、その走査速度を大きく
しなければならず安定で均一な処理を行なうために装置
が大がかりとなり複雑で高価なものとなる。又再結晶化
を行なわない場合には精密な走査を行なう必要はなく、
ランプやマグネトロン等の高周波源による加熱アニール
が行なわれる。しかし、このようなアニールは多結晶薄
膜には効果の小さい場合が多い。例えば、多結晶シリコ
ンの場合、通常、減圧気相成長法等で基板の温度を600
℃〜700℃として形成され、形成後に形成温度以上でア
ニールすることにより多結晶の結晶粒を成長させること
が出来るが、これらの成長した結晶粒の境界部分に結晶
欠陥や歪みが凝縮され、この薄膜を用いて作成された素
子の電気的特性に悪影響を及ぼすという問題点を有して
いた。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, the conventional heating method for recrystallization is to scan an energy beam,
In order to process a large area, the scanning speed must be increased, and the apparatus becomes large and complicated and expensive for stable and uniform processing. Also, if recrystallization is not performed, it is not necessary to perform precise scanning,
Heat annealing is performed by a high frequency source such as a lamp or a magnetron. However, such annealing is often ineffective for polycrystalline thin films. For example, in the case of polycrystalline silicon, the substrate temperature is usually set to 600
It is formed as ℃ ~ 700 ℃, it is possible to grow polycrystalline crystal grains by annealing after formation temperature above the formation temperature, but crystal defects and strain are condensed at the boundaries of these grown crystal grains. It has a problem that it adversely affects the electrical characteristics of the device formed using the thin film.
問題点を解決するための手段 本発明はこの問題点を解決するため、多結晶薄膜に紫外
線を照射すると同時にヒータアニールを行ないヒータ部
を例えばカーボンストリップヒータのような一次元的に
均熱部分が得られるヒータを用いて、これを基板に対し
て相対的に所定の速度で移動させるものである。Means for Solving the Problems In order to solve this problem, the present invention irradiates a polycrystalline thin film with ultraviolet rays and simultaneously performs heater annealing, so that a heater portion is formed in a one-dimensional uniform heating portion such as a carbon strip heater. The obtained heater is used to move the heater at a predetermined speed relative to the substrate.
作用 本発明はこの方法により再結晶化の場合のアニール温度
を下げ、大面積を均一に処理し、再結晶化が出来ない条
件においては、多結晶材料の結晶粒の境界部分における
欠陥や歪みなどを減じて、多結晶薄膜を用いて作成した
薄膜トランジスタ等の素子の電気特性を大きく改善する
ことが出来る。Effect The present invention lowers the annealing temperature in the case of recrystallization by this method, uniformly treats a large area, and under the condition that recrystallization cannot be performed, defects and strains in the boundary portion of the crystal grains of the polycrystalline material Can be significantly reduced, and the electrical characteristics of an element such as a thin film transistor formed using a polycrystalline thin film can be greatly improved.
実 施 例 以下図面を用いて本発明の実施例を説明する。第１図に
おいて下地基板11の上に減圧気相成長法、プラズマ気相
成長法、各種蒸着技術等により多結晶薄膜12を形成す
る。通常は基板11を加熱しながら形成する。例えば多結
晶シリコンを形成する場合、減圧気相成長法では600℃
以上に加熱した石英炉に基板を設置し、シランガスを流
して行なう。非晶質薄膜13は、下地基板11と多結晶薄膜
12の膨張率の差による熱歪みを緩和するための薄膜ある
いは基板11の結晶的あるいは電気的な影響を除却するた
めの緩衝層であり、酸化シリコン，窒化シリコン，フッ
化カルシウム等多結晶層の材料に応じて選択される。ま
た薄膜12が多結晶シリコンの場合は基板として石英を選
択し、上記緩衝層を設けない構造も可能である。このよ
うにして作成した多結晶薄膜基板１の多結晶薄膜12の部
分に紫外線４を照射する。紫外線４を多結晶薄膜12に照
射すると、結晶粒の境界部分に存在する欠陥あるいは各
種歪みのためにその部分に紫外線４が効率よく吸収さ
れ、選択的アニール効果があると考えられる。EXAMPLES Examples of the present invention will be described below with reference to the drawings. In FIG. 1, a polycrystalline thin film 12 is formed on a base substrate 11 by a reduced pressure vapor deposition method, a plasma vapor deposition method, various vapor deposition techniques and the like. Usually, the substrate 11 is formed while being heated. For example, in the case of forming polycrystalline silicon, 600 ° C by the low pressure vapor deposition method.
The substrate is placed in the quartz furnace heated as described above, and silane gas is caused to flow. The amorphous thin film 13 includes the base substrate 11 and the polycrystalline thin film.
A buffer layer for eliminating the crystalline or electrical influence of the thin film or the substrate 11 for alleviating the thermal strain due to the difference in the expansion coefficient of 12 and a polycrystalline layer such as silicon oxide, silicon nitride, calcium fluoride It is selected according to the material. When the thin film 12 is made of polycrystalline silicon, quartz is selected as the substrate and the buffer layer may not be provided. The portion of the polycrystalline thin film 12 of the polycrystalline thin film substrate 1 thus created is irradiated with ultraviolet rays 4. It is considered that when the polycrystalline thin film 12 is irradiated with the ultraviolet rays 4, the ultraviolet rays 4 are efficiently absorbed in the boundary portions of the crystal grains due to defects or various strains, and a selective annealing effect is exerted.
本発明者等は、この紫外線のエネルギーを102W/mm以下
として多結晶薄膜12を照射し、同時にその照射部分をカ
ーボン，タングステン等を線状に形成したストリップヒ
ータ３により加熱し、さらにこのヒータ３と多結晶薄膜
基板１を相対的に0.1mm/sec〜100mm/sec程度の速度で図
中破線で示した矢印の方向に移動させることにより大面
積に亘り、均一に多結晶シリコンの粒界欠陥等をアニー
ルし、これを用いて作成した薄膜トランジスタの電気的
特性を大きく改善できることを見出した。このように多
結晶薄膜12を半導体材料により作成することにより、そ
の効果が明確に得られる故に、シリコン以外のゲルマニ
ウム，ガリウム砒素，セレン化カドミウム，セレン亜鉛
等の多結晶材料に対して本発明の効果は大きい。The inventors of the present invention irradiate the polycrystalline thin film 12 with the energy of this ultraviolet ray of 10 2 W / mm or less, and at the same time, heat the irradiated portion with a strip heater 3 in which carbon, tungsten, etc. are linearly formed. By moving the heater 3 and the polycrystalline thin film substrate 1 relatively at a speed of about 0.1 mm / sec to 100 mm / sec in the direction of the arrow indicated by the broken line in the figure, the grains of polycrystalline silicon are uniformly distributed over a large area. It has been found that the electrical characteristics of the thin film transistor fabricated by annealing the field defects and the like can be greatly improved. By thus forming the polycrystalline thin film 12 of a semiconductor material, the effect can be clearly obtained. Therefore, the present invention can be applied to polycrystalline materials other than silicon such as germanium, gallium arsenide, cadmium selenide, and zinc selenium. The effect is great.
第２図において多結晶薄膜基板を予備的に加熱するため
に加熱可能な基板台６に設置したアニール方法について
示した。このようにすることによりマトリップヒータ３
の加熱条件の範囲が広くなるという利点が得られる。FIG. 2 shows an annealing method in which a polycrystalline thin film substrate is preliminarily heated and placed on a heatable substrate stage 6. By doing this, the mat lip heater 3
The advantage of widening the range of heating conditions is obtained.
ここで７は紫外線源で通常キセノンランプ，高圧水銀灯
などが使用出来、これを凹面鏡８にて集光して紫外線４
を基板に照射する。紫外線の光源としてはエキシマレー
ザ等の紫外線レーザも使用可能である。Here, 7 is an ultraviolet ray source, and a xenon lamp, a high-pressure mercury lamp, or the like can be used.
To the substrate. An ultraviolet laser such as an excimer laser can also be used as the ultraviolet light source.
発明の効果 本発明のアニール方法により、大面積を均一にアニール
可能であるストリップヒータアニール方法のアニール温
度を下げることが出来、多結晶薄膜を融解させて再結晶
化する方法をとらなくとも、固相のまま、多結晶粒の境
界部分の欠陥を効率よくアニールすることが可能とな
り、再結晶化に匹敵する効果を得ることが可能となる。EFFECTS OF THE INVENTION The annealing method of the present invention can lower the annealing temperature of the strip heater annealing method capable of uniformly annealing a large area, and the solid thin film can be solidified even if a method of melting and recrystallizing a polycrystalline thin film is not adopted. It is possible to efficiently anneal the defects at the boundaries of the polycrystalline grains while maintaining the phase, and it is possible to obtain an effect comparable to recrystallization.
第１図，第２図は本発明の一実施例のアニール工程を示
す図である。 １……多結晶薄膜基板、３……ストリップヒータ、４…
…紫外線、11……下地基板、13……非晶質薄膜。1 and 2 are views showing an annealing process according to an embodiment of the present invention. 1 ... Polycrystalline thin film substrate, 3 ... Strip heater, 4 ...
… UV rays, 11 …… Base substrate, 13 …… Amorphous thin film.
Claims (5)
対し、この多結晶薄膜が融解しない条件で紫外線を照射
すると同時にヒータにより加熱し、多結晶粒界に於ける
結晶性を改善することを特徴とする多結晶薄膜基板のア
ニール方法。1. A polycrystalline thin film formed on the surface of an amorphous substrate is irradiated with ultraviolet rays under the condition that the polycrystalline thin film is not melted and simultaneously heated by a heater to improve the crystallinity at the polycrystalline grain boundary. A method for annealing a polycrystalline thin film substrate, comprising:
ガリウム砒素、セレン化カドミウム、セレン化亜鉛等の
多結晶半導体材料により形成した特許請求の範囲第１項
記載の多結晶薄膜基板アニール方法。2. A polycrystalline thin film formed of silicon, germanium,
The polycrystalline thin film substrate annealing method according to claim 1, which is formed of a polycrystalline semiconductor material such as gallium arsenide, cadmium selenide, or zinc selenide.
い非晶質表面を得ることを特徴とする特許請求の範囲第
１項記載の多結晶薄膜基板アニール方法。3. The polycrystalline thin film substrate annealing method according to claim 1, wherein a high melting point glass material such as quartz is used as the substrate to obtain an amorphous surface.
特徴とする特許請求の範囲第１項記載の多結晶薄膜基板
アニール方法。4. The method for annealing a polycrystalline thin film substrate according to claim 1, wherein the ultraviolet rays are obtained by using a high pressure mercury lamp.
リップヒータによるアニール部分を所定の速度にて移動
させることを特徴とする特許請求の範囲第１項記載の多
結晶薄膜基板のアニール方法。5. The annealing method for a polycrystalline thin film substrate according to claim 1, wherein the heater is a strip heater, and an annealed portion by the strip heater is moved at a predetermined speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61141944A JPH07107894B2 (en) | 1986-06-18 | 1986-06-18 | Annealing method for polycrystalline thin film substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61141944A JPH07107894B2 (en) | 1986-06-18 | 1986-06-18 | Annealing method for polycrystalline thin film substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62299011A JPS62299011A (en) | 1987-12-26 |
| JPH07107894B2 true JPH07107894B2 (en) | 1995-11-15 |
Family
ID=15303769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61141944A Expired - Lifetime JPH07107894B2 (en) | 1986-06-18 | 1986-06-18 | Annealing method for polycrystalline thin film substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07107894B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0817731A (en) * | 1994-06-28 | 1996-01-19 | New Japan Radio Co Ltd | Manufacture of semiconductor device |
| US6423585B1 (en) | 1997-03-11 | 2002-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
| JP2006032982A (en) * | 2005-09-02 | 2006-02-02 | Semiconductor Energy Lab Co Ltd | Heating processing method of thin film |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55162224A (en) * | 1979-06-06 | 1980-12-17 | Toshiba Corp | Preparation of semiconductor device |
| JPS58147024A (en) * | 1982-02-24 | 1983-09-01 | Fujitsu Ltd | Lateral epitaxial growth |
| JPS58206121A (en) * | 1982-05-27 | 1983-12-01 | Toshiba Corp | Manufacture of thin-film semiconductor device |
| JPS60137011A (en) * | 1983-12-26 | 1985-07-20 | Hitachi Ltd | Manufacture of semiconductor substrate and production equipment used for said method |
| JPH0656839B2 (en) * | 1984-03-28 | 1994-07-27 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
-
1986
- 1986-06-18 JP JP61141944A patent/JPH07107894B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62299011A (en) | 1987-12-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |