JPH0710949U - Semiconductor device - Google Patents

Abstract

(57) [Summary] [Structure] A frame-shaped insulating container 2 made of mullite ceramics or glass ceramics, and a heat sink 3 mainly made of silicon Si and brazed or glass-bonded to one main surface of the insulating container 2. And the integrated circuit chip 4 made of silicon Si semiconductor and scribe-bonded to a heat sink in an insulating container. [Effect] Overall light weight, fast signal propagation speed,
Excellent heat dissipation and bondability of each part. Therefore, it is useful as a high-speed and high-density integrated circuit device.

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 INDUSTRIAL APPLICABILITY The present invention relates to a semiconductor device, and can be suitably used particularly for a semiconductor device that requires high heat dissipation.

[0002]

[Prior art]

 In a semiconductor device, since the amount of heat generated increases as the size, integration, speed, and power-up of semiconductor chips increase, a highly heat-dissipative insulating container is required. Therefore, not only is a semiconductor chip mounted on a ceramic multilayer wiring board in which wiring is formed on an insulating ceramic layer made of alumina, etc., but a structure is also adopted in which fins made of a high thermal conductive material are attached to the multilayer wiring board. . Further, a structure in which the substrate portion on which the semiconductor chip is mounted is made of a high thermal conductive material and a frame body surrounding the semiconductor chip is joined to the substrate portion is also adopted (Japanese Patent Laid-Open No. 63-314855). , Japanese Utility Model Publication No. 1-137538). In particular, the latter structure, in which the substrate itself functions as a heat sink, is superior in terms of heat dissipation.

On the other hand, in recent years, in order to increase the signal propagation speed, it has been proposed to use mullite ceramics or glass ceramics instead of alumina ceramics as an insulating layer in a multilayer substrate of a high density IC package. (JP-B-57-23672, JP-A-55-139709).

That is, since the propagation delay time of an electric signal is proportional to the square root of the dielectric constant of the insulating layer surrounding the wiring conductor, mullite or glass ceramics having a small relative dielectric constant is used as the main component of the insulating layer to increase the signal speed. To achieve.

[0005]

[Problems to be solved by the device]

 In the above-mentioned prior art, copper-tungsten alloy, aluminum nitride ceramics, silicon carbide ceramics, tungsten, and molybdenum are known as high thermal conductive materials.

However, among these materials, when mullite ceramics is used as an insulating material for a semiconductor container, there is no material that is compatible with both mullite ceramics and a silicon semiconductor, and is lightweight and inexpensive. Therefore, a high heat-dissipating silicon semiconductor device using mullite ceramics as an insulating material has not yet been mass-produced. An object of the present invention is to solve such problems and to provide a high-speed, high-density, lightweight and low-cost semiconductor device.

[0007]

[Means for Solving the Problems]

 The means is that the semiconductor device is made of mullite ceramics or glass ceramics and has a frame-shaped insulating container and a heat sink that is mainly made of silicon Si and is brazed or glass-bonded to one main surface of the insulating container. It is characterized by including an integrated circuit chip made of a semiconductor and scribe-bonded to a heat sink in an insulating container.

[0008]

[Action]

 Since the integrated circuit chip is bonded to the heat sink, the heat generated by the integrated circuit chip is directly transferred to the heat sink. The heat sink is mainly made of silicon Si. Since the thermal conductivity of silicon Si is 168 W / m · K, it is comparable to that of conventional heat sink materials. Therefore, the heat is efficiently dissipated through the heat sink.

Further, since both the integrated circuit chip and the heat sink are made of silicon Si, and the thermal expansion coefficient of silicon is 3.5 × 10 ⁻⁶ / ° C., mullite having a small thermal expansion difference (thermal expansion coefficient). = 4.0 × 10 ^-6 / ° C) or glass ceramics (coefficient of thermal expansion = 3.0 × 10 ^-6 / ° C) as the main component of the insulating container, the junction between the chip and the heat sink and The thermal stress at the joint between the insulating container and the heat sink is reduced. Further, since the specific gravity of silicon is as small as 2.3, even if the heat sink occupies a considerable volume of the whole semiconductor device, the whole device is lighter than the conventional one.

[0010]

【Example】

 -Embodiment 1- Fig. 1 shows a structural example in which the semiconductor device of the present invention is applied to a high-density IC device such as a pin grid array (PGA). A pin grid array type high-density IC device 1 is composed of an insulating container 2, a heat sink 3, an integrated circuit chip 4, I / O (input / output) pins 5, and a sealing lid 6.

The insulating container 2 is made of mullite ceramics having a mullite content of 75% by weight, a density of 2.95 g / cm ³ , a dielectric constant of 6.3 and a thermal expansion coefficient of 4.0 × 10 ⁻⁶ / ° C. It is a frame-shaped multi-layered wiring board in which wiring is formed. Then, on one main surface thereof, a metallization of tungsten having a thickness of 15 μm and a nickel plating having a thickness of 2 μm are applied to a joint portion with the heat sink 3. The same metallization and nickel plating are also applied to the main surface on the opposite side at the joint with the sealing lid 6.

The heat sink 3 is made of Shin-Etsu Chemical Silicon Si having a thermal expansion coefficient of 3.5 × 10 ⁻⁶ / ° C., a thermal conductivity of 168 W / m · k, and a density of 2.34 g / cm ³ , Ag brazing is performed on the main surface.

The integrated circuit chip 4 is made of a silicon Si semiconductor having a Si purity of 100-10 ⁻⁹ wt%, and is scribe-bonded to the heat sink 3 in the insulating container 2. The I / O pin 5 is joined to a pad portion (not shown) of the insulating container 2 to electrically connect the internal wiring of the insulating container 2 and an external peripheral circuit. The sealing lid 6 is made of metal such as Kovar and is joined to the insulating container 2 to hermetically close the integrated circuit chip 4. Although not shown, the integrated circuit chip 4 and the internal wiring of the insulating container 2 are electrically connected to each other by bonding with a known Al line or Au line.

In order to confirm the effect of the semiconductor device of this example, the device was kept at a temperature of −65 ° C. for 5 minutes, and then a thermal cycle of holding at a temperature of 150 ° C. for 5 minutes was repeated 50 times. There was no abnormality in the joint between the heat sink 3 and the heat sink 3 or the joint between the heat sink 3 and the integrated circuit chip 4. In addition, the circuit of the integrated circuit chip 4 was not damaged.

Example 2 In the semiconductor device of this example, the material of the insulating container 2 is replaced with mullite ceramics, and SiO 2 is added.₂56% by weight, Al₂O₃23.5% by weight, MgO 15% by weight, B₂O₃1.0 wt%, ZnO 3.5 wt%, P₂O_FiveDensity 2.5g / cm consisting of 1.0% by weight ³ , Dielectric constant 5.5, thermal expansion coefficient 3.0 × 10^-6A semiconductor device of the same shape and quality as in Example 1 except that the cordierite-based crystallization glass having a temperature of / ° C. was used.

When the same heat cycle as in Example 1 was repeated, there was no abnormality in the joint between the insulating container 2 and the heat sink 3 and the joint between the heat sink 3 and the integrated circuit chip 4. Moreover, the circuit of the integrated circuit chip 4 was not damaged.

[0017]

[Effect of device]

 Since the semiconductor device of the present invention has the above-mentioned structure, it is lightweight as a whole, has a high signal propagation speed, and is excellent in heat dissipation and bondability of each part. Therefore, it is useful as a high-speed and high-density integrated circuit device.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a semiconductor device of an example.

[Explanation of symbols]

1 Semiconductor device 2 Insulation container
3 heat sink 4 integrated circuit chip 5 I / O (input / output) pin 6 lid for sealing

Claims (1)

[Scope of utility model registration request] 1. A frame-shaped insulating container made of mullite ceramics or glass ceramics, a heat sink mainly made of silicon Si, which is brazed or glass-bonded to one main surface of the insulating container, and a silicon Si semiconductor. , A semiconductor device comprising an integrated circuit chip scribe-bonded to a heat sink in an insulating container.