JPH07110346A - Electric field detection method for high voltage device and electric field detection device for high voltage device - Google Patents
Electric field detection method for high voltage device and electric field detection device for high voltage deviceInfo
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- JPH07110346A JPH07110346A JP5253318A JP25331893A JPH07110346A JP H07110346 A JPH07110346 A JP H07110346A JP 5253318 A JP5253318 A JP 5253318A JP 25331893 A JP25331893 A JP 25331893A JP H07110346 A JPH07110346 A JP H07110346A
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- optical
- light
- electric field
- high voltage
- voltage device
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、高電圧装置の発生して
いる電界を検出する電界検出方法及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electric field detecting method and device for detecting an electric field generated by a high voltage device.
【０００２】[0002]
【従来の技術】高圧加速器や高圧プラズマ発生装置の真
空装置内の電界を検出する方法はなく、小型のセンサの
出現が待たれていた。同様に、電子レンジの内部の電界
分布についても、これを直接測定する方法がなく、水分
を含む物質がマイクロ波を吸収して温度上昇する現象か
ら間接的に測定する方法に頼ってきた。さらに、例え
ば、電力設備において送電線を含む施設の保守・状態監
視には電界検出は必須要件である。2. Description of the Related Art There is no method for detecting an electric field in a vacuum device of a high-voltage accelerator or a high-pressure plasma generator, and a small sensor has been awaited. Similarly, regarding the electric field distribution inside the microwave oven, there is no method of directly measuring the electric field distribution, but the method of indirectly measuring the electric field distribution from the phenomenon that a substance containing water absorbs microwaves and its temperature rises. Further, for example, electric field detection is an essential requirement for maintenance and condition monitoring of facilities including transmission lines in electric power equipment.
【０００３】図６は、従来、電界検出に使われていた光
電圧センサの構成を模式的に示している。ＢＧＯ（ビス
マス・ゲルマニウム・オキサイド：Ｂｉ12ＧｅＯ20）結
晶などの電気光学結晶に電界を印加したとき、屈折率は
印加した電界の強度に比例して変化する。この性質（ポ
ッケルス効果）が電界検出に応用される。即ち、高電圧
導体の電圧を分圧してＢＧＯ結晶２１の電極２５に印加
し、偏光子２２を通過した光の偏光状態がこの結晶２１
内部で変換される。偏光状態を変換された光は、波長板
２４を通って検光子２３に入射され、検光子２３により
強度変調を受けた透過光は光電変換器（図示せず）によ
って電気信号に変換され検出される。この方式は、遠隔
地の送電施設に敷設し、光ファイバを駆使することによ
り、地絡・短絡・断線・落雷等の事故検出等の状態監視
に使われてきた。FIG. 6 schematically shows the structure of an optical voltage sensor which has been conventionally used for electric field detection. When an electric field is applied to an electro-optic crystal such as a BGO (bismuth germanium oxide: Bi 12 GeO 20 ) crystal, the refractive index changes in proportion to the strength of the applied electric field. This property (Pockels effect) is applied to electric field detection. That is, the voltage of the high voltage conductor is divided and applied to the electrode 25 of the BGO crystal 21, and the polarization state of the light passing through the polarizer 22 is changed to the crystal 21.
Converted internally. The light whose polarization state has been converted is incident on the analyzer 23 through the wave plate 24, and the transmitted light intensity-modulated by the analyzer 23 is converted into an electric signal by a photoelectric converter (not shown) and detected. It This system has been used for condition monitoring such as ground fault, short circuit, disconnection, lightning, etc. accident detection by laying it in a remote power transmission facility and making full use of optical fiber.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うなポッケルス効果を応用した電界検出には、次のよう
な欠点がある。即ち、電気光学結晶に電界を印加する電
圧は、分圧しているとはいえ実用的には５００ボルト以
上の高い電圧が必要であるため、安全確保のために特別
の措置を要する。However, the electric field detection to which the Pockels effect is applied has the following drawbacks. That is, the voltage for applying the electric field to the electro-optic crystal is practically required to be a high voltage of 500 V or more even though the voltage is divided, so that special measures are required for ensuring safety.
【０００５】本発明の課題は、高電圧装置に非接触で該
高電圧装置の発生する電界の検出を可能とし、より安全
で、敷設が容易な電界検出方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a safer electric field detecting method which enables detection of an electric field generated by a high voltage device without contacting the high voltage device and is safer and easier to install.
【０００６】本発明のもう一つの課題は、高電圧装置に
非接触で該高電圧装置の発生する電界の検出を可能と
し、より安全で、敷設が容易な電界検出装置を提供する
ことにある。Another object of the present invention is to provide a safer electric field detecting device which can detect an electric field generated by the high voltage device without contacting the high voltage device and is safer and easier to install. .
【０００７】[0007]
【課題を解決するための手段】本発明によれば、印加さ
れた電界の強度に依存して、透過する光の強度が変化す
るように構成された光プローブと；光を発生する光源
と；該光源からの光を前記光プローブに導き入射させる
第１の光ファイバと；光を電気信号に変換する光電変換
器と；前記光プローブを透過した光を前記光電変換器に
導き入射させる第２の光ファイバと；前記光電変換器か
らの電気信号を計測あるいは／および表示する計測器
と；を有する電界検出装置を用いて、高電圧が印加され
ている高電圧装置の近傍に又は該高電圧装置の内部に、
前記光プローブを非接触状態で設置することによって、
前記高電圧装置の発生している電界を光強度変化として
検出することを特徴とする高電圧装置の電界検出方法が
得られる。According to the present invention, an optical probe configured so that the intensity of transmitted light changes depending on the intensity of an applied electric field; a light source for generating light; A first optical fiber that guides and makes light from the light source enter the optical probe; a photoelectric converter that converts light into an electric signal; and a second that guides light that has passed through the optical probe to the photoelectric converter and makes it enter. An optical fiber; and a measuring instrument for measuring and / or displaying an electric signal from the photoelectric converter, the electric field detecting device having a high voltage applied to the high voltage device or in the vicinity of the high voltage device. Inside the device,
By installing the optical probe in a non-contact state,
An electric field detection method for a high-voltage device, characterized in that the electric field generated by the high-voltage device is detected as a change in light intensity.
【０００８】更に本発明によれば、光導波路の一端面に
入射した入射光が該光導波路の他端面で反射して前記一
端面から出射光として出射する構造を有し、前記出射光
の強度が、印加電界の強度に依存して変化するように構
成された光プローブと；光を発生する光源と；光ファイ
バと；光を電気信号に変換する光電変換器と；前記光源
からの光を前記光ファイバに導いて、前記光プローブに
前記入射光として与えると共に、前記光ファイバを介し
て受けた前記光プローブからの前記出射光を前記光電変
換器に与えるサーキュレータと；前記光電変換器からの
電気信号を計測あるいは／および表示する計測器と；を
有する電界検出装置を用いて、高電圧が印加されている
高電圧装置の近傍に又は該高電圧装置の内部に、前記光
プローブを非接触状態で設置することによって、前記高
電圧装置の発生している電界を光強度変化として検出す
ることを特徴とする高電圧装置の電界検出方法が得られ
る。Further, according to the present invention, there is provided a structure in which the incident light incident on the one end face of the optical waveguide is reflected on the other end face of the optical waveguide and is emitted as the emitted light from the one end face. , An optical probe configured to change depending on the strength of an applied electric field; a light source for generating light; an optical fiber; a photoelectric converter for converting light into an electric signal; and light from the light source. A circulator that guides the light to the optical fiber and gives the light as the incident light to the optical probe, and gives the photoelectric converter the light emitted from the optical probe received through the optical fiber; And a measuring instrument for measuring and / or displaying an electric signal; and using the electric field detecting device, the optical probe is non-contacted in the vicinity of a high voltage device to which a high voltage is applied or inside the high voltage device. By placing in state, an electric field detection method of the high voltage device characterized by detecting the occurrence to have the electric field of the high voltage device as a change in light intensity is obtained.
【０００９】また本発明によれば、印加された電界の強
度に依存して、透過する光の強度が変化するように構成
された光プローブと；光を発生する光源と；該光源から
の光を前記光プローブに導き入射させる第１の光ファイ
バと；光を電気信号に変換する光電変換器と；前記光プ
ローブを透過した光を前記光電変換器に導き入射させる
第２の光ファイバと；前記光電変換器からの電気信号を
計測あるいは／および表示する計測器と；を有し、高電
圧が印加されている高電圧装置の近傍に又は該高電圧装
置の内部に、前記光プローブを非接触状態で設置するこ
とによって、前記高電圧装置の発生している電界を光強
度変化として検出することを特徴とする高電圧装置の電
界検出装置が得られる。Further, according to the present invention, an optical probe constructed so that the intensity of transmitted light changes depending on the intensity of an applied electric field; a light source for generating light; and a light from the light source. A first optical fiber that guides the light to the optical probe and makes it enter; a photoelectric converter that converts light into an electric signal; a second optical fiber that guides the light that has passed through the optical probe and makes the light enter the photoelectric converter; A measuring instrument for measuring and / or displaying an electric signal from the photoelectric converter, and the optical probe is not provided near the high voltage device to which a high voltage is applied or inside the high voltage device. By installing in a contact state, an electric field detecting device for a high voltage device is obtained, which detects an electric field generated by the high voltage device as a change in light intensity.
【００１０】更に本発明によれば、光導波路の一端面に
入射した入射光が該光導波路の他端面で反射して前記一
端面から出射光として出射する構造を有し、前記出射光
の強度が、印加電界の強度に依存して変化するように構
成された光プローブと；光を発生する光源と；光ファイ
バと；光を電気信号に変換する光電変換器と；前記光源
からの光を前記光ファイバに導いて、前記光プローブに
前記入射光として与えると共に、前記光ファイバを介し
て受けた前記光プローブからの前記出射光を前記光電変
換器に与えるサーキュレータと；前記光電変換器からの
電気信号を計測あるいは／および表示する計測器と；を
有し、高電圧が印加されている高電圧装置の近傍に又は
該高電圧装置の内部に、前記光プローブを非接触状態で
設置することによって、前記高電圧装置の発生している
電界を光強度変化として検出することを特徴とする高電
圧装置の電界検出装置が得られる。Further, according to the present invention, there is provided a structure in which the incident light incident on the one end face of the optical waveguide is reflected on the other end face of the optical waveguide and is emitted from the one end face as the emitted light, and the intensity of the emitted light is , An optical probe configured to change depending on the strength of an applied electric field; a light source for generating light; an optical fiber; a photoelectric converter for converting light into an electric signal; and light from the light source. A circulator that guides the light to the optical fiber and gives the light as the incident light to the optical probe, and gives the photoelectric converter the light emitted from the optical probe received through the optical fiber; A measuring instrument for measuring and / or displaying an electric signal; and installing the optical probe in a non-contact state in the vicinity of a high voltage device to which a high voltage is applied or inside the high voltage device. By Te, the electric field detector of high voltage device is obtained, characterized by detecting the occurrence to have the electric field of the high voltage device as a change in light intensity.
【００１１】[0011]
【作用】本発明による電界検出方法及び装置は、高電圧
装置の発生する電界の強度を、光プローブを透過又は反
射する光の強度変化として検出するものである。即ち、
電界の強度が光の強度変化として検出される。本検出方
法及び装置においては、電界の強度を光に変換して検出
し、光ファイバによって光電変換器に伝達され、ここで
初めて電気信号として計測器に伝達される。それゆえ光
ファイバを使ったこの伝達線路系においては電磁ノイズ
または電磁漏洩波の発信、受信はなく、さらにこの測定
系の存在自体が被測定系に影響をおよぼすおそれもな
い。The electric field detecting method and device according to the present invention detects the intensity of the electric field generated by the high voltage device as a change in the intensity of light transmitted through or reflected by the optical probe. That is,
The electric field strength is detected as a change in light intensity. In the present detection method and apparatus, the intensity of the electric field is converted into light, which is detected, and is transmitted to the photoelectric converter by the optical fiber, where it is first transmitted to the measuring instrument as an electric signal. Therefore, in this transmission line system using an optical fiber, there is no transmission or reception of electromagnetic noise or electromagnetic leakage waves, and the existence of this measurement system itself does not affect the system under measurement.
【００１２】[0012]
【実施例】次に本発明の実施例について図面を参照して
説明する。Embodiments of the present invention will now be described with reference to the drawings.
【００１３】図１は本発明の第１の実施例による電界検
出方法を実施するにあたって使用した電界検出装置の構
成を示す。本電界検出装置は、印加された電界の強度に
依存して、透過する光の強度が変化するように構成され
た光プローブ２と、光を発生する半導体レーザ１と、こ
の半導体レーザ１からの光を光プローブ２に導き入射さ
せる光ファイバ７と、光を電気信号に変換する光電変換
器８と、光プローブ２を透過した光を光電変換器８に導
き入射させる光ファイバ７´と、光電変換器８からの電
気信号をワイヤケーブル１０を介して受け、該電気信号
を計測あるいは／および表示する計測器９とを有する。
そして、本電界検出装置では、光プローブ２を、高電圧
が印加されている高電圧装置の近傍に又は該高電圧装置
の内部に、非接触状態で設置することによって、前記高
電圧装置の発生している電界を光強度変化として検出す
る。FIG. 1 shows the configuration of an electric field detecting device used for carrying out the electric field detecting method according to the first embodiment of the present invention. This electric field detection device includes an optical probe 2 configured to change the intensity of transmitted light depending on the intensity of an applied electric field, a semiconductor laser 1 that emits light, and a semiconductor laser 1 that emits light. An optical fiber 7 that guides and makes light enter the optical probe 2, a photoelectric converter 8 that converts the light into an electric signal, an optical fiber 7'that makes light that has passed through the optical probe 2 enter and enters the photoelectric converter 8, and a photoelectric converter It has a measuring instrument 9 which receives an electric signal from the converter 8 via a wire cable 10 and measures and / or displays the electric signal.
In the electric field detecting device, the optical probe 2 is installed in the vicinity of or inside the high voltage device to which the high voltage is applied in a non-contact state to generate the high voltage device. The generated electric field is detected as a change in light intensity.
【００１４】図２は図１における光プローブ２を拡大
し、入力光および出力光の変化を併せて示す。光プロー
ブ２は、電気光学結晶であるニオブ酸リチウム結晶基板
３に構築された分岐干渉型光導波路６を有する。この分
岐干渉型光導波路６は、光ファイバ７から入射した光を
２つの位相シフト光導波路（即ち、分岐光導波路）５で
分岐した後、再び結合して光ファイバ７´に出射するも
のである。２つの位相シフト光導波路（即ち、分岐光導
波路）５上にはそれぞれ電極４が形成されている。或い
は、２つの位相シフト光導波路（即ち、分岐光導波路）
５の近傍に、２つの位相シフト光導波路（即ち、分岐光
導波路）５に沿って、それぞれ電極４が形成されても良
い。高電圧装置（図示せず）の発生した電界は、この高
電圧装置の近傍又は内部に非接触状態で設置した光プロ
ーブ２の電極４に印加され、局部的に屈折率の変化が生
じ、その結果、二つの位相シフト光導波路５を伝搬する
光の間に位相差が生じ、この分岐干渉型光導波路６の出
力端において光強度の変化として検出される。FIG. 2 is an enlarged view of the optical probe 2 in FIG. 1 and shows changes in input light and output light together. The optical probe 2 has a branch interference type optical waveguide 6 constructed on a lithium niobate crystal substrate 3 which is an electro-optic crystal. The branch interference type optical waveguide 6 is for branching the light incident from the optical fiber 7 by the two phase shift optical waveguides (that is, the branched optical waveguides) 5, and then re-combining the light to the optical fiber 7 '. . An electrode 4 is formed on each of the two phase shift optical waveguides (that is, branch optical waveguides) 5. Alternatively, two phase shift optical waveguides (ie, branch optical waveguides)
The electrodes 4 may be formed in the vicinity of 5 along the two phase shift optical waveguides (that is, the branched optical waveguides) 5, respectively. The electric field generated by the high-voltage device (not shown) is applied to the electrode 4 of the optical probe 2 installed in the vicinity of or inside the high-voltage device in a non-contact state to locally change the refractive index, As a result, a phase difference occurs between the lights propagating through the two phase shift optical waveguides 5, and the change in the light intensity is detected at the output end of the branch interference type optical waveguide 6.
【００１５】なお、電気光学結晶であるタンタル酸リチ
ウム結晶基板に図２と同様の分岐干渉型光導波路６を構
築した光プローブを使って同じ構成とした場合も、図２
の場合と同様の効果が得られた。It should be noted that when the optical probe having the branch interference type optical waveguide 6 similar to that shown in FIG. 2 is used in the same structure on the lithium tantalate crystal substrate which is an electro-optical crystal, the same structure as in FIG.
The same effect as in the case of was obtained.
【００１６】図３は本発明の第２の実施例による電界検
出方法を実施するにあたって使用した電界検出装置の構
成を示す。FIG. 3 shows the structure of an electric field detecting device used for carrying out the electric field detecting method according to the second embodiment of the present invention.
【００１７】本実施例では光プローブ２´は、反射型
で、ニオブ酸リチウム結晶基板３上に、偏波保持光ファ
イバ１２から一端面に入射した入射光を２つの位相シフ
ト光導波路（即ち、分岐光導波路）５で分岐した後、他
端面の全反射膜１１でそれぞれ反射して前記一端面から
偏波保持光ファイバ１２へ出射光として出射する分岐反
射型光導波路６´が構築されている。図２の電界検出装
置と同様に、２つの位相シフト光導波路（即ち、分岐光
導波路）５上には、電極４がそれぞれ設置される。或い
は、２つの位相シフト光導波路（即ち、分岐光導波路）
５の近傍に、２つの位相シフト光導波路（即ち、分岐光
導波路）５に沿って、それぞれ電極４が形成されても良
い。半導体レーザ１からのレーザ光は、レンズ１４、サ
−キュレータ１３、及び偏波保持光ファイバ１２を通し
て光プローブ２´に入射される。２つの位相シフト光導
波路５間において伝搬・反射した光は再度結合され、位
相差による光の干渉が生じる。この反射光は、偏波保持
光ファイバ１２によってサ−キュレータ１３に伝送さ
れ、サ−キュレータ１３は反射光を光ファイバ７´を介
して光電変換器８に与える。光電変換器８の出力はワイ
ヤケーブル１０を介して計測器９に与えられる。In this embodiment, the optical probe 2'is of a reflection type, and the incident light incident on one end face from the polarization maintaining optical fiber 12 on the lithium niobate crystal substrate 3 is converted into two phase shift optical waveguides (that is, After branching by the branching optical waveguide) 5, a branching reflection type optical waveguide 6 ′ is constructed which is reflected by the total reflection film 11 on the other end surface and is emitted from the one end surface to the polarization maintaining optical fiber 12 as outgoing light. . Similar to the electric field detection device of FIG. 2, the electrodes 4 are provided on the two phase shift optical waveguides (that is, the branched optical waveguides) 5, respectively. Alternatively, two phase shift optical waveguides (ie, branch optical waveguides)
The electrodes 4 may be formed in the vicinity of 5 along the two phase shift optical waveguides (that is, the branched optical waveguides) 5, respectively. The laser light from the semiconductor laser 1 is incident on the optical probe 2 ′ through the lens 14, the circulator 13, and the polarization maintaining optical fiber 12. Light propagated / reflected between the two phase shift optical waveguides 5 is recombined, and light interference due to the phase difference occurs. This reflected light is transmitted to the circulator 13 by the polarization maintaining optical fiber 12, and the circulator 13 gives the reflected light to the photoelectric converter 8 via the optical fiber 7 '. The output of the photoelectric converter 8 is given to the measuring instrument 9 via the wire cable 10.
【００１８】図４は、図１の電界検出装置の光プローブ
２（即ち、図２の光プローブ２）の代りに用いられる別
の光プローブ２´´を示している。この光プローブ２´
´は、強誘電体結晶であるニオブ酸リチウム結晶基板３
上に図２と同様の分岐干渉型光導波路６が構築される。
ただし、２つの位相シフト光導波路（即ち、分岐光導波
路）５の一方が形成されている部分４´のみ結晶の分極
方向が他の部分とは１８０度反転している。この際、２
つの位相シフト光導波路（即ち、分岐光導波路）５の一
方が形成されている部分の少なくとも一部の分極方向が
基板３の他の部分の分極方向とは実質的に反対方向であ
れば良い。なお本光プローブ２´´においては、図２の
電極４は不要である。本光プローブ２´´に電界が印加
されると、局部的に屈折率の変化が生じ、その結果、２
つの位相シフト光導波路５を伝搬する光の間に位相差が
生じ、この分岐干渉型光導波路６の出力端において光強
度の変化として検出される。FIG. 4 shows another optical probe 2 ″ used in place of the optical probe 2 (that is, the optical probe 2 of FIG. 2) of the electric field detecting device of FIG. This optical probe 2 '
′ Is a lithium niobate crystal substrate 3 which is a ferroelectric crystal
A branch interference type optical waveguide 6 similar to that shown in FIG. 2 is constructed above.
However, only in a portion 4'where one of the two phase shift optical waveguides (that is, branch optical waveguides) 5 is formed, the polarization direction of the crystal is inverted by 180 degrees from the other portion. At this time, 2
It suffices that the polarization direction of at least a part of the part where one of the two phase shift optical waveguides (that is, the branch optical waveguide) 5 is formed is substantially opposite to the polarization direction of the other part of the substrate 3. The optical probe 2 ″ does not require the electrode 4 of FIG. When an electric field is applied to the optical probe 2 ″, the refractive index locally changes, and as a result, 2
A phase difference occurs between the lights propagating through the two phase shift optical waveguides 5, and is detected as a change in the light intensity at the output end of the branch interference type optical waveguide 6.
【００１９】なお、強誘電体結晶であるタンタル酸リチ
ウム結晶基板上に図４と同様の光プローブを構成して
も、図４の場合と同様の効果が得られる。Even if an optical probe similar to that shown in FIG. 4 is formed on a lithium tantalate crystal substrate which is a ferroelectric crystal, the same effect as in the case of FIG. 4 can be obtained.
【００２０】図５は、本発明の第３の実施例による電界
検出方法を実施するにあたって使用した電界検出装置の
構成を示す。図５の電界検出装置は、図３の電界検出装
置における光プローブ２´の代りに別の光プローブ２´
´´を用いた点以外は図３の電界検出装置と同じであ
る。この光プローブ２´´´は、反射型で、強誘電体結
晶であるニオブ酸リチウム結晶基板３上に図３と同様の
分岐反射型光導波路６´が構築される。ただし、２つの
位相シフト光導波路（即ち、分岐光導波路）５の一方が
形成されている部分４´のみ結晶の分極方向が他の部分
とは１８０度反転している。この際、２つの位相シフト
光導波路（即ち、分岐光導波路）５の一方が形成されて
いる部分の少なくとも一部の分極方向が基板３の他の部
分の分極方向とは実質的に反対方向であれば良い。本光
プローブ２´´´においては、図３の電極４は不要であ
る。本光プローブ２´´´に電界が印加されると、局部
的に屈折率の変化が生じ、その結果、２つの位相シフト
光導波路５を伝搬する光の間に位相差が生じ、この分岐
干渉型光導波路６の出力端において光強度の変化として
検出される。FIG. 5 shows the structure of an electric field detecting device used for carrying out the electric field detecting method according to the third embodiment of the present invention. The electric field detector of FIG. 5 is different from the optical probe 2 ′ of the electric field detector of FIG. 3 in that another optical probe 2 ′ is used.
It is the same as the electric field detection device of FIG. 3 except that ″ is used. This optical probe 2 '''is a reflection type, and a branched reflection type optical waveguide 6'similar to that in FIG. 3 is constructed on a lithium niobate crystal substrate 3 which is a ferroelectric crystal. However, only the portion 4'where one of the two phase shift optical waveguides (that is, the branched optical waveguide) 5 is formed, the polarization direction of the crystal is inverted by 180 degrees from the other portion. At this time, the polarization direction of at least a part of one of the two phase shift optical waveguides (that is, the branched optical waveguides) 5 is substantially opposite to the polarization direction of the other part of the substrate 3. I wish I had it. In the present optical probe 2 ′ ″, the electrode 4 of FIG. 3 is unnecessary. When an electric field is applied to the optical probe 2 ''', the refractive index locally changes, and as a result, a phase difference occurs between the lights propagating through the two phase shift optical waveguides 5, and this branch interference occurs. It is detected as a change in light intensity at the output end of the mold optical waveguide 6.
【００２１】なお、強誘電体結晶であるタンタル酸リチ
ウム結晶基板上に図５と同様の光プローブを構成して
も、図５の場合と同様の効果が得られる。Even if an optical probe similar to that shown in FIG. 5 is formed on a lithium tantalate crystal substrate which is a ferroelectric crystal, the same effect as in the case of FIG. 5 can be obtained.
【００２２】[0022]
【発明の効果】以上説明したように本発明による電界検
出方法及び装置は、高電圧装置の発生する電界の強度
を、光プローブを透過又は反射する光の強度変化として
検出するものである。即ち、電界の強度が光の強度変化
として検出される。本検出方法及び装置においては、電
界の強度を光に変換して検出し、光ファイバによって光
電変換器に伝達され、ここで初めて電気信号として計測
器に伝達される。それゆえ光ファイバを使ったこの伝達
線路系においては電磁ノイズまたは電磁漏洩波の発信、
受信はなく、さらにこの測定系の存在自体が被測定系に
影響をおよぼすおそれもない。As described above, the electric field detecting method and device according to the present invention detects the intensity of the electric field generated by the high voltage device as a change in the intensity of light transmitted through or reflected by the optical probe. That is, the intensity of the electric field is detected as a change in the intensity of light. In the present detection method and apparatus, the intensity of the electric field is converted into light, which is detected, and is transmitted to the photoelectric converter by the optical fiber, where it is first transmitted to the measuring instrument as an electric signal. Therefore, in this transmission line system using optical fibers, the transmission of electromagnetic noise or electromagnetic leakage waves,
There is no reception, and there is no possibility that the existence of this measurement system itself will affect the system under measurement.
【００２３】本発明によれば、高電圧装置の電界検出の
ために、光プローブは高感度を必要としない。従って、
高電圧装置の電界を捕捉するためのアンテナを必要とせ
ず、光プローブ内に形成したチップ状の電極（図２及び
図３の４）で、或いはこのような電極も必要とせず（図
４及び図５）に、電界の検出が可能である。本発明は、
高電圧装置に直接に接続したり、或いは高電圧装置の高
圧を分圧して接続することを要せず、高電圧装置に非接
触で高電圧装置の電界を検出することができる。また本
発明の光プローブは電極以外に金属部分を含まず落雷に
対する危険が少ない。従って、本電界検出装置の敷設
を、容易にかつ安全に行うことができる。According to the present invention, the optical probe does not need high sensitivity for the electric field detection of the high voltage device. Therefore,
It does not require an antenna to capture the electric field of the high voltage device, a chip-like electrode formed in the optical probe (4 in FIGS. 2 and 3), or such an electrode (see FIG. 4 and The electric field can be detected as shown in FIG. The present invention is
The electric field of the high-voltage device can be detected without contacting the high-voltage device without directly connecting to the high-voltage device or dividing the high voltage of the high-voltage device for connection. Further, the optical probe of the present invention does not include a metal part other than the electrodes, and thus there is little danger of lightning strike. Therefore, the electric field detection device can be installed easily and safely.
【００２４】本発明の電界検出装置の光プローブは、小
型ゆえに、例えば、高圧プラズマ発生装置の真空容器内
に挿入することは容易で、非接触検出が可能でかつ検出
すべき電界を乱す要因をもたないので、信頼性が高い電
界分布の検出結果を得ることができる。Since the optical probe of the electric field detector of the present invention is small, it is easy to insert it into the vacuum container of the high-pressure plasma generator, for example, and it is possible to perform non-contact detection and disturb the electric field to be detected. Since it does not have, it is possible to obtain a highly reliable electric field distribution detection result.
【００２５】また本発明の電界検出装置の光プローブを
電子レンジ内部に設置し、電界分布検出を行うことがで
きる。水分を含む物質の温度上昇によって間接的にしか
検出されなかった電界分布は本発明によって容易に検出
することができる。光プローブは水分を含まず、マイク
ロ波の吸収は小さいため温度上昇を伴わず、小型でかつ
非接触で検出され、また電界を乱すこともないため信頼
性の高い検出結果を得ることができる。The optical probe of the electric field detecting device of the present invention can be installed inside the microwave oven to detect the electric field distribution. The electric field distribution, which was only indirectly detected by the temperature rise of the substance containing water, can be easily detected by the present invention. Since the optical probe does not contain water and has a small microwave absorption, it does not cause a temperature rise, is small and can be detected in a non-contact manner, and does not disturb the electric field, so that a highly reliable detection result can be obtained.
【００２６】更に、本発明の電界検出装置を送電線等の
近傍に敷設すれば、送電線に接続された高電圧装置など
の状態監視に用いることができる。本発明では、非接触
検出が可能となり、誘導を受けることがないため、より
安全で、また検出装置の敷設も容易である。Furthermore, if the electric field detecting device of the present invention is installed near a power transmission line or the like, it can be used for monitoring the state of a high voltage device or the like connected to the power transmission line. In the present invention, non-contact detection is possible, and there is no guidance, so it is safer and the detection device can be installed easily.
【図１】本発明の第１の実施例による電界検出方法を実
施するための電界検出装置のブロック図。FIG. 1 is a block diagram of an electric field detection apparatus for implementing an electric field detection method according to a first embodiment of the present invention.
【図２】図１における光プローブを拡大して示し、入力
光及び出力光の変化を併せて示した図。FIG. 2 is an enlarged view of the optical probe shown in FIG. 1, which also shows changes in input light and output light.
【図３】本発明の第２の実施例による電界検出方法を実
施するための電界検出装置のブロック図。FIG. 3 is a block diagram of an electric field detecting apparatus for implementing an electric field detecting method according to a second embodiment of the present invention.
【図４】図１の電界検出装置の光プローブの代りに用い
られる別の光プローブを示した図。FIG. 4 is a view showing another optical probe used in place of the optical probe of the electric field detection device of FIG.
【図５】本発明の第３の実施例による電界検出方法を実
施するための電界検出装置のブロック図。FIG. 5 is a block diagram of an electric field detecting device for implementing an electric field detecting method according to a third embodiment of the present invention.
【図６】従来、電界検出に使われてきた光電圧センサの
構成を模式的に示した図。FIG. 6 is a diagram schematically showing the configuration of an optical voltage sensor that has been conventionally used for electric field detection.
１ 半導体レーザ ２ 光プローブ ２´ 光プローブ ２´´ 光プローブ ２´´´ 光プローブ ３ ニオブ酸リチウム結晶基板 ４ 電極 ５ 位相シフト光導波路（分岐光導波路） ６ 分岐干渉型光導波路 ６´ 分岐反射型光導波路 ７ 光ファイバ ７´ 光ファイバ ８ 光電変換器 ９ 計測器 １０ ワイヤケーブル １１ 全反射膜 １２ 偏波保持光ファイバ １３ サーキュレータ １４ レンズ 1 semiconductor laser 2 optical probe 2'optical probe 2 '' optical probe 2 '' '' optical probe 3 lithium niobate crystal substrate 4 electrode 5 phase shift optical waveguide (branching optical waveguide) 6 branch interference type optical waveguide 6'branch reflection type Optical waveguide 7 Optical fiber 7'Optical fiber 8 Photoelectric converter 9 Measuring instrument 10 Wire cable 11 Total reflection film 12 Polarization maintaining optical fiber 13 Circulator 14 Lens
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成６年８月８日[Submission date] August 8, 1994
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】請求項８[Name of item to be corrected] Claim 8
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】請求項１６[Name of item to be corrected] Claim 16
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
Claims (16)
する光の強度が変化するように構成された光プローブ
と；光を発生する光源と；該光源からの光を前記光プロ
ーブに導き入射させる第１の光ファイバと；光を電気信
号に変換する光電変換器と；前記光プローブを透過した
光を前記光電変換器に導き入射させる第２の光ファイバ
と；前記光電変換器からの電気信号を計測あるいは／お
よび表示する計測器と；を有する電界検出装置を用い
て、高電圧が印加されている高電圧装置の近傍に又は該
高電圧装置の内部に、前記光プローブを非接触状態で設
置することによって、前記高電圧装置の発生している電
界を光強度変化として検出することを特徴とする高電圧
装置の電界検出方法。1. An optical probe configured to change the intensity of transmitted light depending on the intensity of an applied electric field; a light source for generating light; and a light from the light source to the optical probe. A first optical fiber for guiding and entering the light; a photoelectric converter for converting light into an electric signal; a second optical fiber for guiding and entering the light transmitted through the optical probe into the photoelectric converter; and from the photoelectric converter And an electric field measuring device for measuring and / or displaying the electric signal of the optical probe, the optical probe is not provided near the high voltage device to which a high voltage is applied or inside the high voltage device. An electric field detection method for a high-voltage device, comprising detecting the electric field generated by the high-voltage device as a change in light intensity by installing the device in a contact state.
る基板と；該基板上に配列され、前記第１の光ファイバ
から入射した光を第１及び第２の分岐光導波路で分岐し
た後、再び結合して前記第２の光ファイバに出射する分
岐干渉型光導波路と；この分岐干渉型光導波路の前記第
１及び前記第２の分岐光導波路上に又は前記第１及び前
記第２の分岐光導波路の近傍にそれぞれ設けられた第１
及び第２の電極と；を有し、前記分岐干渉型光導波路の
出射光の強度が前記第１及び前記第２の電極に印加され
た電界の強度に依存して変化することを特徴とする請求
項１に記載の高電圧装置の電界検出方法。2. The optical probe comprises a substrate having an electro-optical effect; arranged on the substrate, and splitting the light incident from the first optical fiber by the first and second branch optical waveguides, A branching interference type optical waveguide which is re-coupled and emitted to the second optical fiber; on the first and second branching optical waveguides of the branching interference type optical waveguide, or the first and second branches First provided in the vicinity of the optical waveguide
And a second electrode; and the intensity of the emitted light of the branch interference type optical waveguide changes depending on the intensity of the electric field applied to the first and second electrodes. The electric field detection method for a high voltage device according to claim 1.
２の電極のみを金属部分として有することを特徴とする
請求項２に記載の高電圧装置の電界検出方法。3. The electric field detection method for a high voltage device according to claim 2, wherein the optical probe has only the first and second electrodes as a metal portion.
る基板と；該基板上に配列され、前記第１の光ファイバ
から入射した光を第１及び第２の分岐光導波路で分岐し
た後、再び結合して前記第２の光ファイバに出射する分
岐干渉型光導波路と；を有し、前記基板として強誘電体
結晶を用い、前記第１及び前記第２の分岐光導波路の一
方が形成されている部分の少なくとも一部の分極方向が
前記基板の他の部分の分極方向とは実質的に反対方向で
あることを特徴とする請求項１に記載の高電圧装置の電
界検出方法。4. The optical probe comprises: a substrate having an electro-optical effect; arranged on the substrate, and after branching the light incident from the first optical fiber by the first and second branch optical waveguides, A branch interference type optical waveguide which is re-coupled and is emitted to the second optical fiber, and one of the first and second branch optical waveguides is formed by using a ferroelectric crystal as the substrate. 2. The electric field detecting method for a high voltage device according to claim 1, wherein the polarization direction of at least a part of the portion is substantially opposite to the polarization direction of the other portion of the substrate.
光導波路の他端面で反射して前記一端面から出射光とし
て出射する構造を有し、前記出射光の強度が、印加電界
の強度に依存して変化するように構成された光プローブ
と；光を発生する光源と；光ファイバと；光を電気信号
に変換する光電変換器と；前記光源からの光を前記光フ
ァイバに導いて、前記光プローブに前記入射光として与
えると共に、前記光ファイバを介して受けた前記光プロ
ーブからの前記出射光を前記光電変換器に与えるサーキ
ュレータと；前記光電変換器からの電気信号を計測ある
いは／および表示する計測器と；を有する電界検出装置
を用いて、高電圧が印加されている高電圧装置の近傍に
又は該高電圧装置の内部に、前記光プローブを非接触状
態で設置することによって、前記高電圧装置の発生して
いる電界を光強度変化として検出することを特徴とする
高電圧装置の電界検出方法。5. The optical waveguide has a structure in which incident light incident on one end face of the optical waveguide is reflected on the other end face of the optical waveguide and is emitted as outgoing light from the one end face, and the intensity of the outgoing light is equal to that of an applied electric field. An optical probe configured to change depending on the intensity; a light source that generates light; an optical fiber; a photoelectric converter that converts the light into an electrical signal; and guides the light from the light source to the optical fiber. A circulator that gives the incident light to the optical probe as the incident light and gives the emitted light from the optical probe received through the optical fiber to the photoelectric converter; and measures an electric signal from the photoelectric converter. And / or a measuring instrument for displaying, and installing the optical probe in a non-contact state in the vicinity of or inside a high voltage device to which a high voltage is applied. To Therefore, an electric field detection method for a high voltage device, characterized in that the electric field generated by the high voltage device is detected as a change in light intensity.
る基板と；該基板上に配列され、前記光ファイバから一
端面に入射した入射光を第１及び第２の分岐光導波路で
分岐した後、他端面でそれぞれ反射して前記一端面から
前記出射光として出射する分岐反射型光導波路と；この
分岐反射型光導波路の前記第１及び前記第２の分岐光導
波路上に又は前記第１及び前記第２の分岐光導波路の近
傍にそれぞれ設けられた第１及び第２の電極と；を有
し、前記分岐反射型光導波路の出射光の強度が前記第１
及び前記第２の電極に印加された電界の強度に依存して
変化することを特徴とする請求項５に記載の高電圧装置
の電界検出方法。6. The optical probe includes a substrate having an electro-optical effect; arranged on the substrate, and after branching incident light incident on one end face from the optical fiber by the first and second branch optical waveguides. A branch reflection type optical waveguide which is reflected by the other end surface and is emitted from the one end surface as the emitted light; and on the first and second branch optical waveguides of the branch reflection type optical waveguide or on the first and second branch optical waveguides. First and second electrodes respectively provided in the vicinity of the second branched optical waveguide, and the intensity of light emitted from the branched reflective optical waveguide is the first.
And the electric field detection method for a high voltage device according to claim 5, wherein the electric field detection method changes depending on the strength of the electric field applied to the second electrode.
２の電極のみを金属部分として有することを特徴とする
請求項６に記載の高電圧装置の電界検出方法。7. The electric field detection method for a high voltage device according to claim 6, wherein the optical probe has only the first and second electrodes as a metal portion.
る基板と；該基板上に配列され、前記第１の光ファイバ
から入射した光を第１及び第２の分岐光導波路で分岐し
た後、再び結合して前記第２の光ファイバに出射する分
岐干渉型光導波路と；を有し、前記基板として強誘電体
結晶を用い、前記第１及び前記第２の分岐光導波路の一
方が形成されている部分の少なくとも一部の分極方向が
前記基板の他の部分の分極方向とは実質的に反対方向で
あることを特徴とする請求項５に記載の高電圧装置の電
界検出方法。8. The optical probe comprises: a substrate having an electro-optical effect; arranged on the substrate; and after branching the light incident from the first optical fiber by the first and second branch optical waveguides, A branch interference type optical waveguide which is re-coupled and is emitted to the second optical fiber, and one of the first and second branch optical waveguides is formed by using a ferroelectric crystal as the substrate. 6. The electric field detecting method for a high voltage device according to claim 5, wherein the polarization direction of at least a part of the part that is formed is substantially opposite to the polarization direction of the other part of the substrate.
する光の強度が変化するように構成された光プローブ
と；光を発生する光源と；該光源からの光を前記光プロ
ーブに導き入射させる第１の光ファイバと；光を電気信
号に変換する光電変換器と；前記光プローブを透過した
光を前記光電変換器に導き入射させる第２の光ファイバ
と；前記光電変換器からの電気信号を計測あるいは／お
よび表示する計測器と；を有し、高電圧が印加されてい
る高電圧装置の近傍に又は該高電圧装置の内部に、前記
光プローブを非接触状態で設置することによって、前記
高電圧装置の発生している電界を光強度変化として検出
することを特徴とする高電圧装置の電界検出装置。9. An optical probe configured so that the intensity of transmitted light changes depending on the intensity of an applied electric field; a light source for generating light; and a light from the light source to the optical probe. A first optical fiber for guiding and entering the light; a photoelectric converter for converting light into an electric signal; a second optical fiber for guiding and entering the light transmitted through the optical probe into the photoelectric converter; and from the photoelectric converter And a measuring instrument for measuring and / or displaying the electric signal of the optical probe, the optical probe being installed in the vicinity of a high voltage device to which a high voltage is applied or inside the high voltage device in a non-contact state. By so doing, the electric field generated by the high voltage device is detected as a change in light intensity.
する基板と；該基板上に配列され、前記第１の光ファイ
バから入射した光を第１及び第２の分岐光導波路で分岐
した後、再び結合して前記第２の光ファイバに出射する
分岐干渉型光導波路と；この分岐干渉型光導波路の前記
第１及び前記第２の分岐光導波路上に又は前記第１及び
前記第２の分岐光導波路の近傍にそれぞれ設けられた第
１及び第２の電極と；を有し、前記分岐干渉型光導波路
の出射光の強度が前記第１及び前記第２の電極に印加さ
れた電界の強度に依存して変化することを特徴とする請
求項９に記載の高電圧装置の電界検出装置。10. The optical probe comprises: a substrate having an electro-optical effect; arranged on the substrate; and after branching the light incident from the first optical fiber by the first and second branch optical waveguides, A branching interference type optical waveguide which is re-coupled and emitted to the second optical fiber; on the first and second branching optical waveguides of the branching interference type optical waveguide, or the first and second branches A first and a second electrode respectively provided in the vicinity of the optical waveguide, and the intensity of the light emitted from the branch interference type optical waveguide is the intensity of the electric field applied to the first and second electrodes. The electric field detection device for a high voltage device according to claim 9, wherein the electric field detection device changes depending on
第２の電極のみを金属部分として有することを特徴とす
る請求項１０に記載の高電圧装置の電界検出装置。11. The electric field detection device of a high voltage device according to claim 10, wherein the optical probe has only the first and second electrodes as a metal portion.
する基板と；該基板上に配列され、前記第１の光ファイ
バから入射した光を第１及び第２の分岐光導波路で分岐
した後、再び結合して前記第２の光ファイバに出射する
分岐干渉型光導波路と；を有し、前記基板として強誘電
体結晶を用い、前記第１及び前記第２の分岐光導波路の
一方が形成されている部分の少なくとも一部の分極方向
が前記基板の他の部分の分極方向とは実質的に反対方向
であることを特徴とする請求項９に記載の高電圧装置の
電界検出装置。12. The optical probe comprises: a substrate having an electro-optical effect; arranged on the substrate; after the light incident from the first optical fiber is branched by the first and second branch optical waveguides, A branch interference type optical waveguide which is re-coupled and is emitted to the second optical fiber, and one of the first and second branch optical waveguides is formed by using a ferroelectric crystal as the substrate. 10. The electric field detection device for a high voltage device according to claim 9, wherein at least a part of the polarized portion has a polarization direction substantially opposite to a polarization direction of the other portion of the substrate.
該光導波路の他端面で反射して前記一端面から出射光と
して出射する構造を有し、前記出射光の強度が、印加電
界の強度に依存して変化するように構成された光プロー
ブと；光を発生する光源と；光ファイバと；光を電気信
号に変換する光電変換器と；前記光源からの光を前記光
ファイバに導いて、前記光プローブに前記入射光として
与えると共に、前記光ファイバを介して受けた前記光プ
ローブからの前記出射光を前記光電変換器に与えるサー
キュレータと；前記光電変換器からの電気信号を計測あ
るいは／および表示する計測器と；を有し、高電圧が印
加されている高電圧装置の近傍に又は該高電圧装置の内
部に、前記光プローブを非接触状態で設置することによ
って、前記高電圧装置の発生している電界を光強度変化
として検出することを特徴とする高電圧装置の電界検出
装置。13. An optical waveguide has a structure in which incident light incident on one end face of the optical waveguide is reflected on the other end face of the optical waveguide and is emitted as outgoing light from the one end face, and the intensity of the outgoing light is equal to that of an applied electric field. An optical probe configured to change depending on the intensity; a light source that generates light; an optical fiber; a photoelectric converter that converts the light into an electrical signal; and guides the light from the light source to the optical fiber. A circulator that gives the incident light to the optical probe as the incident light and gives the emitted light from the optical probe received through the optical fiber to the photoelectric converter; and measures an electric signal from the photoelectric converter. And / or a measuring instrument for displaying; and by installing the optical probe in a non-contact state in the vicinity of a high voltage device to which a high voltage is applied or inside the high voltage device, Dress An electric field detection device for a high-voltage device, which detects an electric field generated by a device as a change in light intensity.
する基板と；該基板上に配列され、前記光ファイバから
一端面に入射した入射光を第１及び第２の分岐光導波路
で分岐した後、他端面でそれぞれ反射して前記一端面か
ら前記出射光として出射する分岐反射型光導波路と；こ
の分岐反射型光導波路の前記第１及び前記第２の分岐光
導波路上に又は前記第１及び前記第２の分岐光導波路の
近傍にそれぞれ設けられた第１及び第２の電極と；を有
し、前記分岐反射型光導波路の出射光の強度が前記第１
及び前記第２の電極に印加された電界の強度に依存して
変化することを特徴とする請求項１３に記載の高電圧装
置の電界検出装置。14. The optical probe comprises a substrate having an electro-optical effect; arranged on the substrate, and after branching incident light incident on one end face from the optical fiber by the first and second branched optical waveguides. A branch reflection type optical waveguide which is reflected by the other end surface and is emitted from the one end surface as the emitted light; and on the first and second branch optical waveguides of the branch reflection type optical waveguide or on the first and second branch optical waveguides. First and second electrodes respectively provided in the vicinity of the second branched optical waveguide, and the intensity of light emitted from the branched reflective optical waveguide is the first.
14. The electric field detection device for a high voltage device according to claim 13, wherein the electric field detection device changes depending on the strength of the electric field applied to the second electrode.
第２の電極のみを金属部分として有することを特徴とす
る請求項１４に記載の高電圧装置の電界検出装置。15. The electric field detection device of a high voltage device according to claim 14, wherein the optical probe has only the first and second electrodes as a metal portion.
する基板と；該基板上に配列され、前記第１の光ファイ
バから入射した光を第１及び第２の分岐光導波路で分岐
した後、再び結合して前記第２の光ファイバに出射する
分岐干渉型光導波路と；を有し、前記基板として強誘電
体結晶を用い、前記第１及び前記第２の分岐光導波路の
一方が形成されている部分の少なくとも一部の分極方向
が前記基板の他の部分の分極方向とは実質的に反対方向
であることを特徴とする請求項１３に記載の高電圧装置
の電界検出方法。16. The optical probe comprises: a substrate having an electro-optical effect; arranged on the substrate, and after branching the light incident from the first optical fiber by the first and second branch optical waveguides, A branch interference type optical waveguide which is re-coupled and is emitted to the second optical fiber, and one of the first and second branch optical waveguides is formed by using a ferroelectric crystal as the substrate. 14. The method for detecting an electric field in a high voltage device according to claim 13, wherein the polarization direction of at least a part of the exposed portion is substantially opposite to the polarization direction of the other portion of the substrate.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5253318A JPH07110346A (en) | 1993-10-08 | 1993-10-08 | Electric field detection method for high voltage device and electric field detection device for high voltage device |
| CA002144080A CA2144080C (en) | 1993-07-07 | 1994-07-07 | Electric field sensor |
| CN94190476A CN1052070C (en) | 1993-07-07 | 1994-07-07 | Electric field sensor |
| DE69427219T DE69427219T2 (en) | 1993-07-07 | 1994-07-07 | SENSORS FOR ELECTRICAL FIELDS |
| EP94919872A EP0664460B1 (en) | 1993-07-07 | 1994-07-07 | Electric field sensor |
| KR1019950700891A KR100243779B1 (en) | 1993-07-07 | 1994-07-07 | Electric field sensor |
| PCT/JP1994/001113 WO1995002194A1 (en) | 1993-07-07 | 1994-07-07 | Electric field sensor |
| US08/703,617 US5781003A (en) | 1993-07-07 | 1996-08-27 | Electric field sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5253318A JPH07110346A (en) | 1993-10-08 | 1993-10-08 | Electric field detection method for high voltage device and electric field detection device for high voltage device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07110346A true JPH07110346A (en) | 1995-04-25 |
Family
ID=17249640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5253318A Withdrawn JPH07110346A (en) | 1993-07-07 | 1993-10-08 | Electric field detection method for high voltage device and electric field detection device for high voltage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07110346A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8791831B2 (en) | 2011-09-23 | 2014-07-29 | Eaton Corporation | System including an indicator responsive to an electret for a power bus |
| US9093867B2 (en) | 2011-09-23 | 2015-07-28 | Eaton Corporation | Power system including an electret for a power bus |
| JP2017187398A (en) * | 2016-04-06 | 2017-10-12 | 日本電信電話株式会社 | Field intensity measurement instrument |
| CN115728558A (en) * | 2021-08-26 | 2023-03-03 | 赵智亮 | Continuous laser testing high-voltage electric field device |
-
1993
- 1993-10-08 JP JP5253318A patent/JPH07110346A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8791831B2 (en) | 2011-09-23 | 2014-07-29 | Eaton Corporation | System including an indicator responsive to an electret for a power bus |
| US8994544B2 (en) | 2011-09-23 | 2015-03-31 | Eaton Corporation | System including an indicator responsive to an electret for a power bus |
| US9093867B2 (en) | 2011-09-23 | 2015-07-28 | Eaton Corporation | Power system including an electret for a power bus |
| US9385622B2 (en) | 2011-09-23 | 2016-07-05 | Eaton Corporation | Power system including an electret for a power bus |
| JP2017187398A (en) * | 2016-04-06 | 2017-10-12 | 日本電信電話株式会社 | Field intensity measurement instrument |
| CN115728558A (en) * | 2021-08-26 | 2023-03-03 | 赵智亮 | Continuous laser testing high-voltage electric field device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20001226 |