JPH07113193A - Production of metal mold for molding diffraction grating - Google Patents
Production of metal mold for molding diffraction gratingInfo
- Publication number
- JPH07113193A JPH07113193A JP28194493A JP28194493A JPH07113193A JP H07113193 A JPH07113193 A JP H07113193A JP 28194493 A JP28194493 A JP 28194493A JP 28194493 A JP28194493 A JP 28194493A JP H07113193 A JPH07113193 A JP H07113193A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- electroforming
- substrate
- mold
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000465 moulding Methods 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 title description 5
- 239000002184 metal Substances 0.000 title description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 63
- 239000010703 silicon Substances 0.000 claims abstract description 63
- 238000005323 electroforming Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000001312 dry etching Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 16
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001301 oxygen Substances 0.000 abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- 238000004380 ashing Methods 0.000 abstract description 7
- 229910052804 chromium Inorganic materials 0.000 abstract description 7
- 238000001039 wet etching Methods 0.000 abstract description 4
- 230000000704 physical effect Effects 0.000 abstract description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 46
- 239000010408 film Substances 0.000 description 38
- 229910052759 nickel Inorganic materials 0.000 description 23
- 239000007789 gas Substances 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000012937 correction Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004070 electrodeposition Methods 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012789 electroconductive film Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、樹脂製回折格子を成形
するための金型の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a metal mold for molding a resin diffraction grating.
【０００２】[0002]
【従来の技術】従来、回折格子成形用金型の製造方法と
しては、次のような方法が知られている。まず、ガラス
等の基板上にレジストを塗布した後、マスクを用いてＵ
Ｖ照射等でパターニングし、アルカリ溶液等でエッチン
グしてガラス基板上にレジストによる矩形パターンを得
る。その後、ＲＩＥおよび酸素プラズマアッシングによ
り、基板上に矩形形状を形成する。電着用の導電膜とし
て真空蒸着法で金属を成膜した後、電解メッキ法により
矩形形状を反転したニッケル電鋳型を作製する。機械的
に電鋳型を離型した後、機械加工によって所望の形状に
形成して成形用金型を製造する。これは、主に離型後に
導電膜を電鋳型側に残す場合である。また、特開平２−
２７７７９１号公報に開示されるように、離型後に導電
膜を基板側に残す場合、導電膜成膜後にプラズマアッシ
ング装置に装着し、酸素プラズマを照射して酸素層を導
電膜表面に形成し、電鋳反転した後、離型して成形用金
型を得る方法がある。2. Description of the Related Art Conventionally, the following method has been known as a method for manufacturing a diffraction grating molding die. First, after applying a resist on a substrate such as glass, U is applied using a mask.
Patterning is performed by V irradiation or the like, and etching is performed with an alkaline solution or the like to obtain a rectangular pattern of resist on the glass substrate. After that, a rectangular shape is formed on the substrate by RIE and oxygen plasma ashing. A metal film is formed as a conductive film for electrodeposition by a vacuum deposition method, and then a nickel electroforming mold in which a rectangular shape is inverted is produced by an electrolytic plating method. After mechanically releasing the electroforming mold, it is formed into a desired shape by machining to manufacture a molding die. This is mainly the case where the conductive film is left on the electroforming mold side after release. In addition, JP-A-2-
As disclosed in Japanese Laid-Open Patent Publication No. 277791, when the conductive film is left on the substrate side after the mold release, the conductive film is mounted on a plasma ashing device and irradiated with oxygen plasma to form an oxygen layer on the conductive film surface. There is a method of obtaining a molding die by releasing after electroforming reversal.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記従来の方
法で作製される成形用金型には、離型後に導電膜の一部
が破壊され剥離した状態で電鋳型表面に付着したり、あ
るいは導電膜といっしょに基板の一部がもぎ取られるよ
うに電鋳型表面に付着するという不具合が発生した。ま
た、特開平２−２７７７９１号公報記載の方法のよう
に、導電膜上に酸素層を形成してニッケルとの密着力を
弱めることにより離型時の離型性を向上するという方法
においても、物理的に原盤と電鋳型を引き剥がすことに
変わり無く、基板側に残るべき導電膜が剥離して電鋳型
表面に付着したり、あるいは導電膜といっしょに基板の
一部がもぎ取られるように電鋳型表面に付着するという
不具合を多少減少させることはできても皆無にすること
は不可能であった。また、逆に、電着時の密着力不足お
よび酸化層による導電性の悪化から電着時に剥離してし
まうという不具合が新たに発生した。However, in the molding die produced by the above-mentioned conventional method, a part of the conductive film is broken and peeled off after the mold is released, or it is attached to the surface of the electroforming mold. A problem that a part of the substrate was peeled off together with the conductive film and adhered to the surface of the electroforming mold occurred. Further, as in the method described in JP-A-2-277791, a method of improving releasability at the time of demolding by forming an oxygen layer on the conductive film to weaken the adhesion with nickel, There is no change to physically peel off the master and the electro-mold, and the conductive film that should remain on the substrate side peels off and adheres to the electro-mold surface, or part of the substrate is stripped off together with the conductive film. Although the problem of adhering to the mold surface could be somewhat reduced, it was impossible to eliminate it. On the contrary, a new problem has arisen that peeling occurs during electrodeposition due to insufficient adhesion during electrodeposition and deterioration of conductivity due to the oxide layer.
【０００４】本発明は、かかる従来の問題点に鑑みてな
されたもので、基板の矩形形状パターンを電鋳反転した
後の原盤と電鋳型の離型において、導電膜が破壊された
状態で電鋳型表面に付着したり、あるいは導電膜といっ
しょに基板の一部がもぎ取られるように電鋳型表面に付
着するという不具合が無く、表面状態が良好な回折格子
成形用金型の製造方法を提供することを目的とする。The present invention has been made in view of the above-mentioned problems of the related art. In the mold release of the master and the electroforming mold after the rectangular pattern of the substrate is electroformed, the electroconductive film is destroyed in a state of being broken. Provided is a method for manufacturing a mold for forming a diffraction grating, which has a good surface condition without the problem that it adheres to the mold surface or adheres to the electromold surface so that a part of the substrate is stripped off together with the conductive film. The purpose is to
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明は、まずシリコン基板上にレジストを塗布し
た後、マスクを通して紫外線等を露光して、アルカリ現
像液等によるエッチングを行い、基板上にレジストから
なる矩形形状を形成する。ブレーズ形状の場合は、シリ
コン基板上にレジストを塗布した後、ドーズ量を最適化
した電子線描画により感光させて現像液によるエッチン
グを行い、基板上にレジストからなるブレーズ形状を形
成する。矩形形状またはブレーズ形状をシリコン基板上
に形成した後、酸素プラズマアッシング等によりレジス
トを除去して矩形形状またはブレーズ形状を表面に構成
した基板を得る。他のブレーズ形状の作製方法として
は、シリコン基板上にレジストを塗布した後、マスクを
通して紫外線等を露光して、アルカリ現像液等によるエ
ッチングを行い、基板上にレジストからなる矩形形状を
形成した後、ＲＩＥおよびＥＣＲ等により斜めにエッチ
ングを行い、シリコン基板上にブレーズ形状を形成した
後、酸素プラズマアッシング等によりレジストを除去し
てブレーズ形状を表面に構成した基板を得る。In order to solve the above-mentioned problems, the present invention first coats a resist on a silicon substrate, and then exposes it to ultraviolet rays or the like through a mask to perform etching with an alkali developing solution or the like. A rectangular shape made of resist is formed on the substrate. In the case of the blazed shape, after applying a resist on a silicon substrate, it is exposed by electron beam drawing with an optimized dose amount and etched by a developing solution to form a blazed shape made of a resist on the substrate. After forming the rectangular shape or the blaze shape on the silicon substrate, the resist is removed by oxygen plasma ashing or the like to obtain a substrate having the rectangular shape or the blaze shape on the surface. As another method for producing a blaze shape, after applying a resist on a silicon substrate, exposing it to ultraviolet rays or the like through a mask and performing etching with an alkali developing solution or the like to form a rectangular shape made of a resist on the substrate. , RIE, ECR, etc. are obliquely etched to form a blazed shape on the silicon substrate, and then the resist is removed by oxygen plasma ashing or the like to obtain a substrate having a blazed shape on the surface.
【０００６】次に、シリコン基板表面に真空蒸着法、イ
オンプレーティング法またはスパッタリング法等の乾式
成膜法により、クロム、金、銀、ニッケル等の金属を導
電膜として成膜する。あるいは、湿式成膜法によりニッ
ケル、銀等を成膜する。導電膜を形成した面に電解メッ
キ法によりニッケル等の金属を析出させて電鋳型を付着
形成する。このままの状態では基板と電鋳型は密着して
いるのでこれらを剥離する工程が必要となる。そこで、
本発明では、シリコンだけを選択的に溶出させる溶解液
に浸漬することでシリコンを溶解して電鋳型を得る。Next, a metal such as chromium, gold, silver or nickel is formed as a conductive film on the surface of the silicon substrate by a dry film forming method such as a vacuum evaporation method, an ion plating method or a sputtering method. Alternatively, a film of nickel, silver or the like is formed by a wet film forming method. A metal such as nickel is deposited on the surface on which the conductive film is formed by electrolytic plating to form an electroforming mold. In this state, since the substrate and the electroforming mold are in close contact with each other, a step of separating them is required. Therefore,
In the present invention, silicon is dissolved by immersing it in a solution that selectively elutes only silicon to obtain an electroforming template.
【０００７】[0007]
【作用】本発明においては、電鋳反転した後、基板との
離型の方法として溶解液によるエッチング作用により基
板を選択的に溶出させている。そのために基板と導電膜
の境界面に物理的な作用を全く与えることがなく、表面
状態が良好な電鋳型の製造が可能となる。In the present invention, after the electroforming is reversed, the substrate is selectively eluted by the etching action of the dissolution liquid as a method of releasing from the substrate. Therefore, no physical action is given to the boundary surface between the substrate and the conductive film, and it becomes possible to manufacture an electroforming mold having a good surface condition.
【０００８】[0008]
【実施例１】以下、図１から図７に示す実施例１に基づ
き本発明を詳細に説明する。図１に示すように、シリコ
ンウエハ１にフォトレジスト２を均一の膜厚に塗布す
る。シリコンウエハ１は半導体材料としてよく用いられ
る単結晶シリコンウエハであり、塗布表面は研磨されて
おり、平面度を維持することが可能な厚さ、例えば０．
８ｍｍになっている。ただし、最終的に平面度が維持で
きればこれより厚くても薄くても特に問題とはならな
い。フォトレジスト２は、例えば東京応化（株）製ＴＳ
ＭＲ８９００のようなポジ型のフォトレジストであり、
スピンコート法により１００〜２００ｎｍの膜厚になる
ように成膜する。次いで、オーブンにより９０℃、３０
ｍｉｎのプレベークを行う。[Embodiment 1] The present invention will be described in detail below based on Embodiment 1 shown in FIGS. As shown in FIG. 1, a silicon wafer 1 is coated with a photoresist 2 in a uniform film thickness. The silicon wafer 1 is a single crystal silicon wafer that is often used as a semiconductor material, has a coated surface that is polished, and has a thickness capable of maintaining flatness, for example, 0.
It is 8 mm. However, if the flatness can be finally maintained, it does not matter whether the thickness is thicker or thinner than this. The photoresist 2 is, for example, TS manufactured by Tokyo Ohka Co., Ltd.
A positive photoresist such as MR8900,
A film is formed by a spin coating method so as to have a film thickness of 100 to 200 nm. Then, the oven at 90 ℃, 30
Perform a pre-bake of min.
【０００９】次に、図２に示すようにして、露光を行
う。クロムからなる直線状遮光部３を有するフォトマス
ク４で、フォトレジスト２を塗布したシリコンウエハ１
を覆い、アライナーに取り付けてＵＶ光５によりコンタ
クト露光を行う。斜線部６は感光部であり、アルカリ現
像液を用いた湿式エッチングにより斜線部６を除去して
図３に示すように、シリコンウエハ１上にレジストから
なる矩形パターン７を得る。ポストベークはオーブンに
より１２０℃、２０ｍｉｎ行う。なお、図示は省略した
が、回折格子用パターンは小面積であり、１枚のシリコ
ンウエハに複数個作り込むことが可能である。次に、乾
式エッチングによりシリコンウエハ１上に矩形形状を形
成する。エッチングガスとしてはＣＦ4 −Ｏ2 混合ガス
を用いる。ＣＦ4 ガスは０．５〜４０Ｐａの圧力で０．
１〜２０ｓｃｃｍの流量として、またＯ2 ガスは０．０
１〜２０Ｐａの圧力で０．１〜２０ｓｃｃｍの流量とし
て、Ｏ2 ガスの割合が２〜５０ｖｏｌ％となるように設
定する。印加電圧１００〜２００ＶでＲＩＥによりエッ
チングを行う。シリコンエッチングを終了した後、酸素
プラズマによるアッシングによりフォトレジスト２を除
去して表面に矩形形状８を有した図４に示すシリコン原
盤９を得る。矩形形状８のピッチは１μｍ、溝深さは
０．４μｍである。Next, exposure is performed as shown in FIG. A silicon wafer 1 coated with a photoresist 2 using a photomask 4 having a linear light-shielding portion 3 made of chromium.
And is attached to an aligner to perform contact exposure with UV light 5. The shaded portion 6 is a photosensitive portion, and the shaded portion 6 is removed by wet etching using an alkaline developing solution to obtain a rectangular pattern 7 made of a resist on the silicon wafer 1 as shown in FIG. Post baking is performed in an oven at 120 ° C. for 20 minutes. Although illustration is omitted, the diffraction grating pattern has a small area and a plurality of patterns can be formed on one silicon wafer. Next, a rectangular shape is formed on the silicon wafer 1 by dry etching. A CF 4 —O 2 mixed gas is used as the etching gas. CF 4 gas has a pressure of 0.5 to 40 Pa and a pressure of 0.
At a flow rate of 1 to 20 sccm, O 2 gas is 0.0
The pressure is set to 1 to 20 Pa, the flow rate is set to 0.1 to 20 sccm, and the proportion of O 2 gas is set to 2 to 50 vol%. Etching is performed by RIE with an applied voltage of 100 to 200V. After the silicon etching is completed, the photoresist 2 is removed by ashing with oxygen plasma to obtain a silicon master 9 shown in FIG. 4 having a rectangular shape 8 on the surface. The rectangular shape 8 has a pitch of 1 μm and a groove depth of 0.4 μm.
【００１０】次いで、真空蒸着法によりクロムを５〜１
０ｎｍ、その上に金を５０〜１００ｎｍの膜厚でシリコ
ン原盤９上に成膜して導電膜１０を形成する（図５参
照）。その後、電鋳法、例えばスルファミン酸ニッケル
電解液により、導電膜１０を形成したシリコン原盤９上
にニッケルからなる電鋳層１１を形成する（図６参
照）。次いで、ＫＯＨに浸漬してシリコンを溶解させて
図７に示す電鋳型１２を得る。シリコン融解後の電鋳型
１２の表面は、シリコン残渣や導電膜剥離が無く良好で
あった。前述の工程から得られた電鋳型１２から機械加
工によって良好なパターンを切り出して所望の形状に仕
上げて入子とする。成形用母型に入子を組み込んだ成形
用金型を成形機に取り付けた後、射出成形法等により成
形を行い、樹脂製回折格子を得る。成形用樹脂としては
ＰＭＭＡ、ＰＣ、ＰＳ、ＰＣ−ＰＳアロイ、ＴＰＸ、環
状ポリオレフィン樹脂等が考えられる。Then, chromium is added in an amount of 5 to 1 by a vacuum vapor deposition method.
0 nm, and gold with a film thickness of 50 to 100 nm thereon is formed on the silicon master 9 to form the conductive film 10 (see FIG. 5). After that, an electroformed layer 11 made of nickel is formed on the silicon master 9 on which the conductive film 10 is formed by an electroforming method, for example, a nickel sulfamate electrolytic solution (see FIG. 6). Then, it is immersed in KOH to dissolve the silicon and obtain the electroforming mold 12 shown in FIG. The surface of the electroforming mold 12 after melting the silicon was good with no silicon residue or peeling of the conductive film. A good pattern is cut out from the electroforming mold 12 obtained by the above-mentioned process by machining to finish it into a desired shape and insert it. After mounting a molding die in which a mold is incorporated into a molding die on a molding machine, molding is performed by an injection molding method or the like to obtain a resin diffraction grating. As the molding resin, PMMA, PC, PS, PC-PS alloy, TPX, cyclic polyolefin resin and the like can be considered.
【００１１】本実施例の回折格子成形用金型の製造方法
によると、シリコンウェハ１の矩形形状パターンを電鋳
反転した後、シリコン原盤９と電鋳型１２の離型におい
て、導電膜１０が破壊された状態で電鋳型１２表面に付
着したり、あるいは導電膜１０といっしょにシリコンウ
ェハ１の一部がもぎ取られるように電鋳型１２表面に付
着するという不具合が無い表面状態が良好な成形用金型
を得ることが可能である。According to the method for manufacturing the diffraction grating molding die of this embodiment, after the rectangular pattern of the silicon wafer 1 is electroformed and inverted, the conductive film 10 is destroyed when the silicon master 9 and the electroforming mold 12 are released. Molding gold with a good surface condition that does not adhere to the surface of the electroforming mold 12 in such a state that it adheres to the surface of the electroforming mold 12 so that a part of the silicon wafer 1 is stripped off together with the conductive film 10 It is possible to get the mold.
【００１２】[0012]
【実施例２】本実施例においては、フォトマスク４にお
いてクロム３のパターンが直線状ではなく、図８のよう
に曲線状の遮光部１３を形成している。このフォトマス
ク４を用いて実施例１と同様にして露光、現像、乾式エ
ッチング後、シリコン原盤９を得る。本実施例のシリコ
ン原盤９は断面は矩形形状であり、パターンは曲線形状
を形成している。ピッチは１〜３μｍの間で局所的に偏
りを付してあり、溝深さは０．３μｍである。次いで、
スパッタリング法によりシリコン原盤９上にニッケルを
１００ｎｍ成膜して、導電膜１０を形成する。その後、
実施例１と同様にしてニッケル電鋳層１１を形成した
後、ＫＯＨに浸漬してシリコンを溶解して電鋳型１２を
得る。本実施例においては、実施例１と同様の効果を得
るだけでなく、曲線形状を最適化することにより光学的
収差を除去したり、あるいはビーム形状を制御すること
ができる回折格子の成形用金型が製造可能である。[Embodiment 2] In this embodiment, the pattern of chromium 3 in the photomask 4 is not linear, but a curved light-shielding portion 13 is formed as shown in FIG. Using this photomask 4, exposure, development and dry etching are carried out in the same manner as in Example 1 to obtain a silicon master 9. The silicon master 9 of this embodiment has a rectangular cross section and a curved pattern. The pitch is locally biased between 1 and 3 μm, and the groove depth is 0.3 μm. Then
A 100 nm nickel film is formed on the silicon master 9 by the sputtering method to form the conductive film 10. afterwards,
After forming the nickel electroformed layer 11 in the same manner as in Example 1, the electroformed mold 12 is obtained by immersing in nickel and dissolving silicon. In the present embodiment, not only the same effects as in Embodiment 1 are obtained, but also by optimizing the curved shape, the optical aberration can be removed or the beam shape can be controlled. The mold can be manufactured.
【００１３】[0013]
【実施例３】本実施例においては、気相エッチングガス
としてＳｉＣｌ4 およびＣｌ2 の混合ガスを用い、実施
例１と同様にして露光、現像、乾式エッチング後、シリ
コン原盤９を得る。矩形形状８のピッチは１２μｍ、溝
深さは０．８μｍである。次いで、真空蒸着法により銀
をシリコン原盤９上に１５０ｎｍ成膜して導電膜１０を
形成する。その後、実施例１と同様にしてニッケル電鋳
層１１を形成した後、ＫＯＨに浸漬してシリコンを溶解
して電鋳型１２を得る。本実施例においては、実施例１
と同様の効果を得るだけでなく、シリコンウエハ１のエ
ッチング中に発生してしまうフロロカーボン堆積といっ
た汚染を防ぎ、かつ高異方性によりパターン転写精度が
向上するといった品質の向上が可能である。原盤の再現
性が高い電鋳型を得ることにより理論的に得られる理想
的な回折効率に近い特性が得られる。Third Embodiment In this embodiment, a mixed gas of SiCl 4 and Cl 2 is used as a gas phase etching gas, and exposure, development and dry etching are performed in the same manner as in the first embodiment to obtain a silicon master 9. The rectangular shape 8 has a pitch of 12 μm and a groove depth of 0.8 μm. Next, silver is deposited to a thickness of 150 nm on the silicon master 9 by vacuum deposition to form the conductive film 10. After that, the nickel electroformed layer 11 is formed in the same manner as in Example 1 and then immersed in KOH to dissolve silicon to obtain the electroforming mold 12. In this embodiment, the first embodiment
In addition to obtaining the same effect as above, it is possible to prevent contamination such as fluorocarbon deposition that occurs during etching of the silicon wafer 1 and improve the pattern transfer accuracy due to high anisotropy. By obtaining an electroforming mold with high reproducibility of the master, characteristics close to ideal theoretically obtained diffraction efficiency can be obtained.
【００１４】[0014]
【実施例４】本実施例においては、まず実施例１と同様
にしてシリコン原盤９を得る。矩形形状８のピッチは４
μｍ、溝深さは０．２μｍである。次いで、電解メッキ
法によりニッケルをシリコン原盤９の表面上に析出させ
て電着用の導電膜１０を形成する。その後、ニッケル電
鋳を行い、実施例１と同様にしてニッケル電鋳層１１を
形成した後、ＮａＯＨに浸漬してシリコンを溶解して電
鋳型１２を得る。本実施例においては、実施例１と同様
の効果を得るだけでなく、電鋳型１２において表面の非
晶質なニッケルが緻密で硬質な特性を示し、成形用金型
としての耐久性が向上する。Fourth Embodiment In this embodiment, first, a silicon master 9 is obtained in the same manner as in the first embodiment. The pitch of the rectangular shape 8 is 4
μm, and the groove depth is 0.2 μm. Next, nickel is deposited on the surface of the silicon master 9 by electrolytic plating to form the conductive film 10 for electrodeposition. After that, nickel electroforming is performed to form a nickel electroformed layer 11 in the same manner as in Example 1, and then the nickel electroformed layer 11 is immersed in NaOH to dissolve silicon to obtain an electroforming mold 12. In this embodiment, not only the same effects as in Embodiment 1 are obtained, but also the amorphous nickel on the surface of the electroforming mold 12 exhibits dense and hard characteristics, and the durability as a molding die is improved. .
【００１５】[0015]
【実施例５】本実施例においては、ブレーズ形状の回折
格子用金型の製造方法について図９〜図１２を用いて説
明する。シリコンウエハ１上に電子線レジスト１４を均
一な厚さに塗布する。膜厚はブレーズ溝深さにシリコン
とレジストのエッチング選択比を乗じた値以上の厚さと
する。例えばブレーズ溝深さが０．５μｍでシリコンと
レジストのエッチング選択比が５である場合レジストは
２．６μｍの膜厚にする。次いで、図９に示すように、
電子線１５により電子線レジスト１４を感光する。現像
後に、電子線レジスト１４がブレーズ形状になるよう
に、描画の際にドーズ量の調節を行い、現像後に図１０
に示すように、シリコンウエハ１上にレジストからなる
ブレーズ形状１６を得る。ブレーズ形状１６はその深さ
方向において、シリコン上に最終的に得たいブレーズ形
状に、シリコンとレジストのエッチング選択比倍の形状
となっている。次いで、実施例１と同様の乾式エッチン
グにより、図１１に示すように、表面にブレーズ形状を
形成したシリコンウエハ１７を得る。ブレーズ形状のピ
ッチは０．８μｍ、溝深さは０．５μｍである。その
後、真空蒸着法によりクロムを７０ｎｍ成膜して導電膜
を形成する。その後、ニッケル電鋳を行い、実施例１と
同様にしてニッケル電鋳層を形成した後、ＮａＯＨに浸
漬してシリコンを溶解して図１２に示す電鋳型１２を得
る。本実施例においては、実施例１と同様の効果を得る
だけでなく、格子面がブレーズ形状を形成しているの
で、全ての回折次数において回折効率を１００％に最適
化することができるといった自由度の高い光学特性設計
が可能となる。[Embodiment 5] In this embodiment, a method for manufacturing a blaze-shaped mold for a diffraction grating will be described with reference to FIGS. An electron beam resist 14 is applied on the silicon wafer 1 to have a uniform thickness. The film thickness is set to a value equal to or larger than the value obtained by multiplying the blaze groove depth by the etching selection ratio of silicon and resist. For example, when the blaze groove depth is 0.5 μm and the etching selection ratio between silicon and resist is 5, the resist has a film thickness of 2.6 μm. Then, as shown in FIG.
The electron beam resist 14 is exposed to the electron beam 15. After the development, the dose amount is adjusted at the time of drawing so that the electron beam resist 14 has a blaze shape.
A blaze shape 16 made of a resist is obtained on the silicon wafer 1 as shown in FIG. The blaze shape 16 has a shape in which, in the depth direction, the blaze shape to be finally obtained on the silicon is doubled in the etching selection ratio of silicon and resist. Then, by dry etching similar to that in Example 1, as shown in FIG. 11, a silicon wafer 17 having a blaze shape formed on its surface is obtained. The blazed shape has a pitch of 0.8 μm and a groove depth of 0.5 μm. Then, chromium is deposited to 70 nm by a vacuum evaporation method to form a conductive film. After that, nickel electroforming is performed to form a nickel electroformed layer in the same manner as in Example 1, and then the nickel electroformed layer is immersed in NaOH to dissolve the silicon and obtain the electroforming mold 12 shown in FIG. In this embodiment, not only the same effect as that of the first embodiment is obtained, but also since the grating surface forms the blazed shape, the diffraction efficiency can be optimized to 100% in all diffraction orders. It is possible to design optical characteristics with high degree.
【００１６】[0016]
【発明の効果】以上のように、本発明の回折格子成形用
金型の製造方法によれば、基板の矩形上パターンを電鋳
反転した後、原盤と電鋳型の離型において、導電膜が破
壊された状態で電鋳型表面に付着したり、あるいは導電
膜といっしょに基板の一部がもぎ取られるように電鋳型
表面に付着するという不具合が無く、表面状態が良好な
成形用金型を得ることが可能である。As described above, according to the method for manufacturing the diffraction grating molding die of the present invention, after the rectangular pattern on the substrate is electroformed and inverted, the conductive film is formed when the master and the electromold are released. There is no problem that it adheres to the surface of the electroforming mold in a destroyed state, or adheres to the surface of the electroforming mold so that part of the substrate is stripped off together with the conductive film, and a molding die with a good surface condition is obtained. It is possible.
【図１】本発明の実施例１の製造方法を示す正面図であ
る。FIG. 1 is a front view showing a manufacturing method according to a first embodiment of the present invention.
【図２】同実施例１の製造方法を示す正面図である。FIG. 2 is a front view showing the manufacturing method of the first embodiment.
【図３】同実施例１の製造方法を示す正面図である。FIG. 3 is a front view showing the manufacturing method according to the first embodiment.
【図４】同実施例１の製造方法を示す正面図である。FIG. 4 is a front view showing the manufacturing method according to the first embodiment.
【図５】同実施例１の製造方法を示す正面図である。FIG. 5 is a front view showing the manufacturing method according to the first embodiment.
【図６】同実施例１の製造方法を示す正面図である。FIG. 6 is a front view showing the manufacturing method according to the first embodiment.
【図７】同実施例１の製造方法を示す正面図である。FIG. 7 is a front view showing the manufacturing method according to the first embodiment.
【図８】本発明の実施例２の製造方法を示す正面図であ
る。FIG. 8 is a front view showing the manufacturing method according to the second embodiment of the present invention.
【図９】本発明の実施例５の製造方法を示す正面図であ
る。FIG. 9 is a front view showing the manufacturing method according to the fifth embodiment of the present invention.
【図１０】同実施例５の製造方法を示す正面図である。FIG. 10 is a front view showing the manufacturing method according to the fifth embodiment.
【図１１】同実施例５の製造方法を示す正面図である。FIG. 11 is a front view showing the manufacturing method according to the fifth embodiment.
【図１２】同実施例５の製造方法を示す正面図である。FIG. 12 is a front view showing the manufacturing method according to the fifth embodiment.
１ シリコンウェハ ２ フォトレジスト ４ マスク ５ ＵＶ光 ７ 矩形パターン ８ 矩形形状 ９ シリコン原盤 １０ 導電膜 １１ ニッケル電鋳層 １２ 電鋳型 １４ 電子線レジスト １５ 電子線 １６ ブレーズ形状 １７ シリコンウェハ １８ 電鋳型 1 Silicon Wafer 2 Photoresist 4 Mask 5 UV Light 7 Rectangular Pattern 8 Rectangular Shape 9 Silicon Master 10 Conductive Film 11 Nickel Electroforming Layer 12 Electroforming Mold 14 Electron Beam Resist 15 Electron Beam 16 Blazing Shape 17 Silicon Wafer 18 Electroforming Mold
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成５年１２月１４日[Submission date] December 14, 1993
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】請求項１[Name of item to be corrected] Claim 1
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００９[Correction target item name] 0009
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００９】次に、図２に示すようにして、露光を行
う。クロムからなる直線状遮光部３を有するフォトマス
ク４で、フォトレジスト２を塗布したシリコンウエハ１
を覆い、アライナーに取り付けてＵＶ光５によりコンタ
クト露光を行う。斜線部６は感光部であり、アルカリ現
像液を用いた湿式エッチングにより斜線部６を除去して
図３に示すように、シリコンウエハ１上にレジストから
なる矩形パターン７を得る。ポストベークはオーブンに
より１２０℃、２０ｍｉｎ行う。なお、図示は省略した
が、回折格子用パターンは小面積であり、１枚のシリコ
ンウエハに複数個作り込むことが可能である。次に、乾
式エッチングによりシリコンウエハ１上に矩形形状を形
成する。エッチングガスとしてはＣＦ４−Ｏ２混合ガス
を用いる。ＣＦ４ガスは０．５〜４０Ｐａの圧力で５〜
４０ｓｃｃｍの流量として、またＯ２ガスは０．０１〜
２０Ｐａの圧力で０．１〜２０ｓｃｃｍの流量として、
Ｏ２ガスの割合が２〜５０ｖｏｌ％となるように設定す
る。印加電圧１００〜２００ＶでＲＩＥによりエッチン
グを行う。シリコンエッチングを終了した後、酸素プラ
ズマによるアッシングによりフォトレジスト２を除去し
て表面に矩形形状８を有した図４に示すシリコン原盤９
を得る。矩形形状８のピッチは１μｍ、溝深さは０．４
μｍである。Next, exposure is performed as shown in FIG. A silicon wafer 1 coated with a photoresist 2 using a photomask 4 having a linear light-shielding portion 3 made of chromium.
And is attached to an aligner to perform contact exposure with UV light 5. The shaded portion 6 is a photosensitive portion, and the shaded portion 6 is removed by wet etching using an alkaline developing solution to obtain a rectangular pattern 7 made of a resist on the silicon wafer 1 as shown in FIG. Post baking is performed in an oven at 120 ° C. for 20 minutes. Although illustration is omitted, the diffraction grating pattern has a small area and a plurality of patterns can be formed on one silicon wafer. Next, a rectangular shape is formed on the silicon wafer 1 by dry etching. A CF 4 —O 2 mixed gas is used as the etching gas. The CF 4 gas is 5 to 5 at a pressure of 0.5 to 40 Pa.
At a flow rate of 40 sccm , O 2 gas is 0.01 to
At a pressure of 20 Pa and a flow rate of 0.1 to 20 sccm,
The ratio of O 2 gas is set to be 2 to 50 vol%. Etching is performed by RIE with an applied voltage of 100 to 200V. After the silicon etching is completed, the photoresist 2 is removed by ashing with oxygen plasma to form a silicon master 9 shown in FIG. 4 having a rectangular shape 8 on the surface.
To get The rectangular shape 8 has a pitch of 1 μm and a groove depth of 0.4.
μm.
【手続補正３】[Procedure 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１４[Correction target item name] 0014
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１４】[0014]
【実施例４】本実施例においては、まず実施例１と同様
にしてシリコン原盤９を得る。矩形形状８のピッチは４
μｍ、溝深さは０．２μｍである。次いで、無電解メッ
キ法によりニッケルをシリコン原盤９の表面上に析出さ
せて電着用の導電膜１０を形成する。その後、ニッケル
電鋳を行い、実施例１と同様にしてニッケル電鋳層１１
を形成した後、ＮａＯＨに浸漬してシリコンを溶解して
電鋳型１２を得る。本実施例においては、実施例１と同
様の効果を得るだけでなく、電鋳型１２において表面の
非晶質なニッケルが緻密で硬質な特性を示し、成形用金
型としての耐久性が向上する。Fourth Embodiment In this embodiment, first, a silicon master 9 is obtained in the same manner as in the first embodiment. The pitch of the rectangular shape 8 is 4
μm, and the groove depth is 0.2 μm. Then, the electroless message
Nickel is deposited on the surface of the silicon master 9 by the g method to form the conductive film 10 for electrodeposition. After that, nickel electroforming is performed, and the nickel electroformed layer 11 is formed in the same manner as in Example 1.
After the formation, the silicon is dissolved by immersing it in NaOH to obtain the electroforming mold 12. In this embodiment, not only the same effects as in Embodiment 1 are obtained, but also the amorphous nickel on the surface of the electroforming mold 12 exhibits dense and hard characteristics, and the durability as a molding die is improved. .
Claims (1)
形状またはブレーズ形状を形成する工程と、乾式エッチ
ングにより矩形形状またはブレーズ形状をシリコン基板
に転写する工程と、レジストを除去する工程と、シリコ
ン基板表面に導電膜を形成する工程と、メッキ法により
電鋳型を付着する工程と、シリコンを溶解して電鋳型を
得る工程とからなることを特徴とする回折格子成形用金
型の製造方法。1. A step of forming a rectangular shape or a blazed shape made of a resist on a silicon substrate, a step of transferring the rectangular shape or the blazed shape to a silicon substrate by dry etching, a step of removing the resist, and a silicon substrate surface. A method of manufacturing a diffraction grating molding die, comprising: a step of forming a conductive film on the substrate, a step of attaching an electroforming template by a plating method, and a step of melting silicon to obtain an electroforming template.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28194493A JPH07113193A (en) | 1993-10-15 | 1993-10-15 | Production of metal mold for molding diffraction grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28194493A JPH07113193A (en) | 1993-10-15 | 1993-10-15 | Production of metal mold for molding diffraction grating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07113193A true JPH07113193A (en) | 1995-05-02 |
Family
ID=17646096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28194493A Pending JPH07113193A (en) | 1993-10-15 | 1993-10-15 | Production of metal mold for molding diffraction grating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07113193A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003075555A (en) * | 2001-08-30 | 2003-03-12 | Kawaguchiko Seimitsu Co Ltd | Molding die for clock dial, manufacturing method of clock dial using it, and clock dial manufactured thereby |
| JP2006159673A (en) * | 2004-12-08 | 2006-06-22 | Konica Minolta Holdings Inc | Mold manufacturing method, element manufacturing method and element |
| KR100611589B1 (en) * | 2004-07-05 | 2006-08-11 | (주)해빛정보 | Diffraction element manufacturing method |
| JP2009056659A (en) * | 2007-08-30 | 2009-03-19 | Process Lab Micron:Kk | Fine mold for molding and manufacturing method thereof |
-
1993
- 1993-10-15 JP JP28194493A patent/JPH07113193A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003075555A (en) * | 2001-08-30 | 2003-03-12 | Kawaguchiko Seimitsu Co Ltd | Molding die for clock dial, manufacturing method of clock dial using it, and clock dial manufactured thereby |
| KR100611589B1 (en) * | 2004-07-05 | 2006-08-11 | (주)해빛정보 | Diffraction element manufacturing method |
| JP2006159673A (en) * | 2004-12-08 | 2006-06-22 | Konica Minolta Holdings Inc | Mold manufacturing method, element manufacturing method and element |
| JP2009056659A (en) * | 2007-08-30 | 2009-03-19 | Process Lab Micron:Kk | Fine mold for molding and manufacturing method thereof |
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