JPH07116606B2 - Diamond coated carbon material - Google Patents
Diamond coated carbon materialInfo
- Publication number
- JPH07116606B2 JPH07116606B2 JP63213146A JP21314688A JPH07116606B2 JP H07116606 B2 JPH07116606 B2 JP H07116606B2 JP 63213146 A JP63213146 A JP 63213146A JP 21314688 A JP21314688 A JP 21314688A JP H07116606 B2 JPH07116606 B2 JP H07116606B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- film
- silicon carbide
- carbon member
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910003460 diamond Inorganic materials 0.000 title claims description 56
- 239000010432 diamond Substances 0.000 title claims description 56
- 239000003575 carbonaceous material Substances 0.000 title description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 37
- 229910052799 carbon Inorganic materials 0.000 claims description 26
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 20
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 description 26
- 239000000758 substrate Substances 0.000 description 12
- 229910002804 graphite Inorganic materials 0.000 description 11
- 239000010439 graphite Substances 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 239000000126 substance Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000004927 fusion Effects 0.000 description 5
- 229930195733 hydrocarbon Natural products 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011214 refractory ceramic Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は、表面をダイヤモンドで被覆した炭素部材に関
するもので、このダイヤモンド被覆炭素部材は、スピー
カー振動板,核融合炉壁材,耐摩擦材,高強度炭素繊維
材,集積回路基板等に利用できるものである。TECHNICAL FIELD The present invention relates to a carbon member whose surface is coated with diamond. The diamond-coated carbon member is a speaker diaphragm, a fusion reactor wall material, and a friction resistant material. It can be used for high strength carbon fiber materials, integrated circuit boards, etc.
[従来の技術] 従来、ダイヤモンドは高温・高圧下での熱力学的平衡状
態において合成されてきたが、最近非平衡状態を積極的
に利用した気相からの合成法(Chemical Vapor Deposit
ion)いわゆるCVD法によってダイヤモンドが合成できる
ことが確認されている。[Prior Art] Diamond has been conventionally synthesized in a thermodynamic equilibrium state under high temperature and high pressure, but recently, a synthetic method from a vapor phase (Chemical Vapor Deposit) which positively utilizes a non-equilibrium state.
It has been confirmed that diamond can be synthesized by the so-called CVD method.
この手法によりセラミックスや金属材料の表面にダイヤ
モンド膜を形成すると、耐摩耗性,耐食性等の向上を図
ることができる。By forming a diamond film on the surface of ceramics or a metal material by this method, it is possible to improve wear resistance, corrosion resistance and the like.
但し、CVD法によるダイヤモンド膜の合成温度が、通常7
00℃以上のため、基材が限定される問題がある。However, the synthesis temperature of the diamond film by the CVD method is usually 7
Since the temperature is 00 ° C or higher, there is a problem that the base material is limited.
又、結晶性の良いダイヤモンド膜を気相成長させる条件
は10倍以上の水素で希釈した炭化水素を用い、ガスをプ
ラズマ,もしくは熱フィラメントで励起するというのが
よく知られた条件で、特開昭58−135117号公報,特開昭
58−110494号公報,特開昭59−3098号公報等に詳細に示
されている。Further, the condition for vapor-phase growth of a diamond film having good crystallinity is that it is well known that hydrocarbon diluted with 10 times or more of hydrogen is used and gas is excited by plasma or hot filament. JP-A-58-135117, JP-A-SHO
Details are shown in Japanese Patent Laid-Open No. 58-110494, Japanese Patent Laid-Open No. 59-3098, and the like.
基材温度が700〜1200℃と高いため、高融点金属やセラ
ミックス等、基材の限定は受けるものの、上述のCVD法
を用い、基材上にダイヤモンド膜を形成することによ
り、耐摩耗性,耐食性,高比弾性等の向上を図ることが
できる。Since the base material temperature is as high as 700 to 1200 ° C, although the base material such as refractory metal and ceramics is limited, by forming the diamond film on the base material using the above-mentioned CVD method, wear resistance, It is possible to improve corrosion resistance and high specific elasticity.
又、核融合炉リミター材として、炭素材であるグラファ
イトが低質量材であり、かつ高い熱流束にも耐える点か
ら広く用いられているが、高温での化学スパッタリング
が大きいため、グラファイトそのものは基材として、そ
の上に炭化ケイ素や炭化チタンを被覆することが試みら
れている。(Starfire−A Commercial Tokamakfusion P
owerplant Study,ANL−FPP−80−1) このため、より低スパッタ性,低質量性等の点で有利な
特性を持つダイヤモンド膜をグラファイト上に被覆する
ことにより特性の向上を図ることができる。In addition, graphite, which is a carbon material, is widely used as a fusion reactor limiter material because it is a low-mass material and can withstand high heat flux, but graphite itself is a basic material because of its large chemical sputtering at high temperatures. As a material, it has been attempted to coat it with silicon carbide or titanium carbide. (Starfire-A Commercial Tokamakfusion P
owerplant Study, ANL-FPP-80-1) Therefore, it is possible to improve the characteristics by coating the graphite film with a diamond film having advantageous characteristics in terms of lower spattering property, lower mass property and the like.
[発明が解決しようとする課題] ところが、ダイヤモンドの低圧気相合成は、本質的に炭
化水素の熱分解によって生成した炭素から析出し、その
析出した物質の中でダイヤモンド以外の炭素物質を再ガ
ス化する、又は析出させる速度を極度に遅くすることに
よって、ダイヤモンドのみを成長させる方法である。[Problems to be Solved by the Invention] However, in the low-pressure vapor phase synthesis of diamond, carbon is essentially generated by thermal decomposition of hydrocarbons, and carbon substances other than diamond are re-gasified in the deposited substances. This is a method of growing only diamond by slowing the rate of conversion or precipitation to an extremely low level.
つまり、基材表面では、炭化水素の熱分解,析出,及び
エッチングの現象が起こっていると考えられている。That is, it is considered that hydrocarbons are decomposed, precipitated, and etched on the surface of the base material.
又、結晶性の良いダイヤモンド生成雰囲気は、強力な水
素プラズマ及び活性な水素ガス雰囲気であるため、基材
にダイヤモンド以外の炭素材料を使用する場合、優先的
にエッチングされ、ダイヤモンドの核生成は非常に不安
定となる。よって安定して結晶性の良いダイヤモンド膜
を炭素基材上に生成することは不可能であった。In addition, since the diamond production atmosphere with good crystallinity is a strong hydrogen plasma and active hydrogen gas atmosphere, when a carbon material other than diamond is used as the base material, it is preferentially etched, and diamond nucleation is extremely difficult. Becomes unstable. Therefore, it has been impossible to stably form a diamond film having good crystallinity on a carbon substrate.
本発明は上記の事情に鑑み、炭素部材に結晶性の良い、
かつ剥離しないダイヤモンド被覆炭素部材を安定して提
供しようとするものである。In view of the above circumstances, the present invention has good crystallinity in the carbon member,
Moreover, it is intended to provide a diamond-coated carbon member which does not peel off stably.
[課題を解決するための手段] 以上のように炭素部材に直接ダイヤモンド膜を形成させ
ようとすると、通常、水素ガスの含まれる強力な還元性
雰囲気であるため、基材の炭素部材と活性な水素ガス
(例えば原子状水素)が反応し、炭化水素となってしま
う。このため基材は見かけ上エッチングされ、強い還元
性雰囲気では、数分で基材が消失してしまう。又、消失
せずとも基材表面は不安定である。[Means for Solving the Problems] When an attempt is made to directly form a diamond film on a carbon member as described above, a strong reducing atmosphere usually contains hydrogen gas, so that the carbon member of the base material and the active member are activated. Hydrogen gas (for example, atomic hydrogen) reacts and becomes hydrocarbon. Therefore, the base material is apparently etched, and in a strong reducing atmosphere, the base material disappears within a few minutes. Moreover, the surface of the substrate is unstable even if it does not disappear.
そこで、本発明者等は鋭意研究を重ねたところ、炭素基
材表面が還元性雰囲気で損なわれないか、もしくは損わ
れたとしても、その影響がダイヤモンド核の形成に影響
しない程度に軽微な、中間層を介して形成させれば良い
との知見を得、この発明を完成させることができた。Therefore, the inventors of the present invention have conducted extensive studies, and the carbon substrate surface is not impaired in a reducing atmosphere, or even if it is impaired, the effect is minor to the extent that it does not affect the formation of diamond nuclei, The present inventors were able to complete the present invention by finding that it should be formed via the intermediate layer.
即ち、この発明は、炭素部材上にダイヤモンド膜を被覆
するにあたり、前記炭素部材と接する表面に炭化ケイ素
膜を有し、その上にダイヤモンド膜が形成されてなるこ
とを特徴とするダイヤモンド被覆炭素部材に関するもの
である。That is, according to the present invention, in coating a diamond film on a carbon member, a diamond-coated carbon member has a silicon carbide film on a surface in contact with the carbon member, and the diamond film is formed thereon. It is about.
又、少なくともダイヤモンド膜と接する被覆層が炭化ケ
イ素膜であることが好ましい。この炭化ケイ素は結晶性
のものでも、非晶質のものでもよい。Further, it is preferable that at least the coating layer in contact with the diamond film is a silicon carbide film. This silicon carbide may be crystalline or amorphous.
このダイヤモンド被覆炭素部材の使用する分野によって
も異なるが、例えば、スピーカー用振動板として使用す
る場合では、一般にヤング率をE,比重を とした時、 の大きな材料ほど高音域での変換特性が優れているの
で、ダイヤモンドより密度の大きい炭化ケイ素等の中間
層は薄い方が良い。又、核融合炉材として使用する場合
も、核融合炉プラズマ温度の低下を防ぐ意味でも、炭化
ケイ素より低質量材であるダイヤモンドの方が好まし
く、炭化ケイ素膜はダイヤモンド膜が強力なディスプラ
ッション等でスパッタリングされた場合を考えても、ダ
イヤモンドより高質量である炭化ケイ素膜は薄い方が好
ましい。Although it depends on the field of use of this diamond-coated carbon member, for example, when it is used as a diaphragm for a speaker, the Young's modulus is generally E and the specific gravity is And when Since the larger the material of, the better the conversion characteristics in the high frequency range, the thinner the intermediate layer of silicon carbide or the like having a higher density than that of diamond is better. Also, when used as a fusion reactor material, diamond, which is a low-mass material, is preferable to silicon carbide in terms of preventing a decrease in fusion reactor plasma temperature, and the silicon carbide film has a strong dispersion such as a diamond film. Considering the case of being sputtered by, it is preferable that the silicon carbide film having a mass higher than that of diamond is thin.
そして、好ましくは0.1〜50μmの範囲が良好である。And, the range of 0.1 to 50 μm is preferable.
[作用] 上述のように、炭素部材表面を一旦炭化ケイ素膜等で被
覆した後、被覆膜上面に気相成長法でダイヤモンド膜を
合成させる構成になっている。このため、一般に水素ガ
ス及び炭化水素や有機化合物等原料ガスの分解によって
生ずる水素ガス等を含む還元性雰囲気によって炭素部材
表面が直接さらされることなく、ダイヤモンド膜が形成
される。[Operation] As described above, the surface of the carbon member is once coated with the silicon carbide film or the like, and then the diamond film is synthesized on the upper surface of the coating film by the vapor phase growth method. Therefore, generally, the diamond film is formed without directly exposing the surface of the carbon member to the reducing atmosphere containing hydrogen gas and hydrogen gas produced by decomposition of raw material gas such as hydrocarbon and organic compound.
又、一般にダイヤモンドの気相合成は還元性雰囲気で行
われるため、どのようなダイヤモンドの気相合成法を用
いても、本発明による効果は現れる。Further, since the vapor phase synthesis of diamond is generally carried out in a reducing atmosphere, the effect of the present invention can be obtained by using any vapor phase synthesis method of diamond.
[実施例] 本発明に係るダイヤモンド被覆炭素部材の実施例につい
て比較例を挙げて具体的に説明する。[Examples] Examples of the diamond-coated carbon member according to the present invention will be specifically described with reference to comparative examples.
まず99.9%の純度を有するように焼成したグラファイト
材を作り、これを20×20×5mmの寸法に切断した後、100
0番のダイヤモンドパウダで最終研磨し、得られたグラ
ファイト材を基材として使用した。又、中間層被覆後の
基材表面も1000番のダイヤモンドパウダで研磨した後、
ダイヤモンド合成を行った。First, make a graphite material that is fired to have a purity of 99.9%, cut it into a size of 20 × 20 × 5 mm, and then
The graphite material obtained by final polishing with a No. 0 diamond powder was used as a substrate. Also, after polishing the base material surface after coating the intermediate layer with diamond powder No. 1000,
Diamond synthesis was performed.
ダイヤモンド合成法としては、化学的なものとしてマイ
クロ波プラズマCVD法と、DCプラズマ併用熱フィラメン
トCVD法を用いた。又、後者の方はフィラメントにTa線
を用いた。As the diamond synthesizing method, microwave plasma CVD method and hot filament CVD method combined with DC plasma were used as chemical methods. In the latter case, Ta wire was used for the filament.
[実施例1] 上記グラファイト基材を反応容器内に入れ、この中にSi
Cl410体積%,CH410体積%,H280体積%の混合ガスプラズ
マCVDを行ったところ、基材温度800℃において、グラフ
ァイト基材上に1μmの炭化ケイ素膜が被覆された。そ
して、この炭化ケイ素膜被覆グラファイト基材を再び第
1図に示すマイクロ波プラズマCVD装置でH299体積%,CH
41体積%からなる混合ガスにより圧力50Torrによりプラ
ズマCVDを1時間行ったところ、炭化ケイ素膜被覆グラ
ファイト基材表面に2μmのダイヤモンド膜が形成され
た。[Example 1] The above graphite base material was placed in a reaction vessel, and Si was placed in the reaction vessel.
When mixed gas plasma CVD of 10% by volume of Cl 4, 10% by volume of CH 4 , and 80% by volume of H 2 was performed, a 1 μm silicon carbide film was coated on the graphite substrate at a substrate temperature of 800 ° C. Then, the graphite substrate coated with the silicon carbide film was again subjected to H 2 99 vol%, CH 2 by the microwave plasma CVD apparatus shown in FIG.
When plasma CVD was performed for 1 hour at a pressure of 50 Torr with a mixed gas of 41 vol%, a 2 μm diamond film was formed on the surface of the graphite substrate coated with the silicon carbide film.
この炭化ケイ素膜は、X線回折では何らピークが認めら
れないものであったが、ESCA(Electron Spectroscopy
for Chemical Analysis)及びオージェ電子分光(Auger
Electron Spectroscopy)では炭化ケイ素の結合を持
ち、ケイ素と炭素とからなる非晶質膜であることが確認
された。This silicon carbide film did not show any peaks in X-ray diffraction, but ESCA (Electron Spectroscopy)
for Chemical Analysis) and Auger electron spectroscopy (Auger
Electron Spectroscopy) confirmed that it was an amorphous film composed of silicon and carbon, having a bond of silicon carbide.
又、ダイヤモンド膜については、X線回折でピークが確
認される結晶質のものであることが確認された。Further, it was confirmed that the diamond film was a crystalline film whose peak was confirmed by X-ray diffraction.
[実施例2] 実施例1と同様にして、炭化ケイ素膜被覆グラファイト
基材を作製し、これを第2図に示すDCプラズマ併用CVD
装置で、H299体積%,CH41体積%からなる混合ガスによ
り圧力50Torr,フィラメント温度2400℃,基材表面温度8
50℃,フィラメントと基材間の距離8mm,DCプラズマ5A/c
m2基板冷却の条件でダイヤモンド被覆を1時間行い、10
μmのダイヤモンド膜を形成した。炭化ケイ素膜,ダイ
ヤモンド膜は、実施例1と同様、前者は非晶質,後者は
結晶性の良いダイヤモンド膜であることが判った。Example 2 A silicon carbide film-covered graphite base material was prepared in the same manner as in Example 1, and this was used in combination with DC plasma CVD as shown in FIG.
In the equipment, pressure 50 Torr, filament temperature 2400 ° C, substrate surface temperature 8 by mixed gas consisting of 99% by volume of H 2 and 1% by volume of CH 4
50 ℃, 8mm distance between filament and substrate, DC plasma 5A / c
Diamond coating is performed for 1 hour under the condition of cooling m 2 substrate,
A μm diamond film was formed. As with Example 1, the silicon carbide film and the diamond film were found to be amorphous in the former and diamond in the latter for good crystallinity.
[比較例1] 上記グラファイト基材に炭化ケイ素膜等被覆層を一切介
さずに、直接ダイヤモンド膜を合成させた以外は、実施
例1と同様の方法で、実験を1時間行った。[Comparative Example 1] An experiment was conducted for 1 hour in the same manner as in Example 1 except that a diamond film was directly synthesized on the graphite base material without any coating layer such as a silicon carbide film.
ダイヤモンドについては、X線回折では何らピークが観
測されず、電子線回折によれば、部分的にダイヤモンド
のピークが存在することが確認された。Regarding diamond, no peak was observed by X-ray diffraction, and it was confirmed by electron beam diffraction that a diamond peak partially existed.
又、グラファイト基材の重量が、処理前後において80%
も減少していることが確認された。In addition, the weight of the graphite base material is 80% before and after the treatment.
It was also confirmed that the number was decreasing.
[比較例2] 比較例1と同様の条件で、時間のみ1時間増加させて実
験を行ったところ、最初にセットしたグラファイト基材
は消失していた。[Comparative Example 2] Under the same conditions as in Comparative Example 1, an experiment was conducted by increasing the time by 1 hour, and the graphite base material initially set disappeared.
[発明の効果] 以上の説明から明らかなように、炭素部材の表面にダイ
ヤモンド膜を被覆する場合は、炭化ケイ素膜をはじめと
する中間層を介在させることにより、ダイヤモンド生成
下の強力な水素プラズマや活性水素に直接炭素部材がさ
らされることがなくなり、その結果、本発明のダイヤモ
ンド被覆炭素部材は、 (1) 使用目的に応じ、複雑形状の炭素部材に対して
も、ダイヤモンド膜を形成することができる。[Effects of the Invention] As is clear from the above description, when a diamond film is coated on the surface of a carbon member, an intermediate layer such as a silicon carbide film is interposed so that a strong hydrogen plasma under diamond formation is obtained. As a result, the carbon member is not directly exposed to hydrogen or active hydrogen. As a result, the diamond-coated carbon member of the present invention (1) has a diamond film formed on a carbon member having a complicated shape depending on the purpose of use. You can
(2) ダイヤモンドの特性を兼ね備えた炭素部材とし
て潤滑性と耐摩耗性を必要とする分野,高周波が流れる
集積回路基板として低誘電率を必要とする分野,スピー
カー等の振動板として高比弾性率が必要となる分野,
又、核融合炉材等、低質量,高温での低化学スパッタリ
ング特性を必要とする分野への利用が可能である。(2) Fields that require lubricity and wear resistance as a carbon member that combines the characteristics of diamond, fields that require a low dielectric constant as an integrated circuit board through which high frequencies flow, and high specific elastic modulus as a diaphragm for speakers and the like. Areas that require
Further, it can be used in fields requiring low mass and low chemical sputtering characteristics such as fusion reactor materials.
図面は、本発明の実施例及び比較例で使用したダイヤモ
ンド合成装置の説明図で、第1図はマイクロ波プラズマ
CVD装置,第2図はDCプラズマ併用熱フィラメントCVD装
置の説明図である。 1……基材、2……石英反応管、3……真空排気口、4
……供給ガス導入口、5……マグネトロン、6……導波
管、7……プランジャー、8……発生プラズマ、9……
フィラメント、10……水冷可能な支持台、11……冷却
水、12……AC電源、13……DC電源、14……絶縁シール。The drawings are explanatory views of a diamond synthesizing apparatus used in Examples and Comparative Examples of the present invention. FIG. 1 is a microwave plasma.
CVD device, FIG. 2 is an explanatory view of a hot filament CVD device combined with DC plasma. 1 ... Substrate, 2 ... Quartz reaction tube, 3 ... Vacuum exhaust port, 4
...... Supply gas inlet, 5 …… Magnetron, 6 …… Waveguide, 7 …… Plunger, 8 …… Generated plasma, 9 ……
Filament, 10 ... Water-coolable support, 11 ... Cooling water, 12 ... AC power supply, 13 ... DC power supply, 14 ... Insulation seal.
フロントページの続き (56)参考文献 特開 昭63−153275(JP,A) 特開 昭62−196371(JP,A) 特公 昭62−10301(JP,B2)Continuation of front page (56) Reference JP-A-63-153275 (JP, A) JP-A-62-196371 (JP, A) JP-B-62-10301 (JP, B2)
Claims (1)
り、該炭素部材と接する表面に炭化ケイ素膜を有し、そ
の上にダイヤモンド膜が形成されてなることを特徴とす
るダイヤモンド被覆炭素部材。1. A diamond-coated carbon member, which comprises coating a carbon member with diamond, having a silicon carbide film on a surface in contact with the carbon member, and forming a diamond film on the silicon carbide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63213146A JPH07116606B2 (en) | 1987-10-31 | 1988-08-26 | Diamond coated carbon material |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27629587 | 1987-10-31 | ||
| JP62-276295 | 1987-10-31 | ||
| JP63213146A JPH07116606B2 (en) | 1987-10-31 | 1988-08-26 | Diamond coated carbon material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01201478A JPH01201478A (en) | 1989-08-14 |
| JPH07116606B2 true JPH07116606B2 (en) | 1995-12-13 |
Family
ID=26519630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63213146A Expired - Fee Related JPH07116606B2 (en) | 1987-10-31 | 1988-08-26 | Diamond coated carbon material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07116606B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2712285B1 (en) * | 1993-11-12 | 1995-12-22 | Lorraine Carbone | Surface treatment of carbon material to adhere a subsequent deposit of diamond and diamond coated parts obtained. |
| US5527559A (en) * | 1994-07-18 | 1996-06-18 | Saint Gobain/Norton Industrial Ceramics Corp. | Method of depositing a diamond film on a graphite substrate |
| FR2878648B1 (en) * | 2004-11-30 | 2007-02-02 | Commissariat Energie Atomique | RECTANGULAR SEMICONDUCTOR SUPPORT FOR MICROELECTRONICS AND METHOD OF MAKING SUCH A SUPPORT |
| WO2006137332A1 (en) * | 2005-06-20 | 2006-12-28 | Mie Tlo Co., Ltd. | Process for producing diamond-like carbon film |
| CN111254409A (en) * | 2018-12-03 | 2020-06-09 | 核工业西南物理研究院 | Preparation method of diamond film first wall facing to plasma |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6210301A (en) * | 1985-07-06 | 1987-01-19 | 財団法人鉄道総合技術研究所 | Fail-safe control of electric shunt |
| JPH06951B2 (en) * | 1986-02-20 | 1994-01-05 | 東芝タンガロイ株式会社 | High adhesion diamond coated member |
-
1988
- 1988-08-26 JP JP63213146A patent/JPH07116606B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01201478A (en) | 1989-08-14 |
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