JPH0712590B2 - Method for polishing semiconductor crystal material - Google Patents
Method for polishing semiconductor crystal materialInfo
- Publication number
- JPH0712590B2 JPH0712590B2 JP61000767A JP76786A JPH0712590B2 JP H0712590 B2 JPH0712590 B2 JP H0712590B2 JP 61000767 A JP61000767 A JP 61000767A JP 76786 A JP76786 A JP 76786A JP H0712590 B2 JPH0712590 B2 JP H0712590B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- weight
- crystal material
- semiconductor crystal
- colloidal silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体結晶材料の研磨方法の改善に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to an improvement in a polishing method for a semiconductor crystal material.
CdTe,ZnTe,HgTe,ZnCdTe,HgCdTe等のII−VI族化合物半導
体結晶材料の無歪み鏡面研磨には例えばメチルアルコー
ルに１％程度の臭素を溶解した研磨液が用いられてい
る。この研磨液は研磨速度が大きい利点はあるが、臭素
が揮発し易いため研磨中に臭素濃度が低下して研磨速度
が変り、再現性の良い研磨が困難なこと、人体に有害な
臭素を作業環境に拡散させないように特別の設備が必要
とされること、臭素は腐食性が強く研磨装置の寿命が短
い、この研磨液の作用は化学研磨に近く、研磨面に波打
ちを生じ易い等の欠点がある。For strain-free mirror polishing of II-VI group compound semiconductor crystal materials such as CdTe, ZnTe, HgTe, ZnCdTe, and HgCdTe, a polishing solution prepared by dissolving about 1% bromine in methyl alcohol is used. This polishing liquid has the advantage of a high polishing rate, but since bromine is likely to volatilize, the bromine concentration decreases during polishing and the polishing rate changes, making it difficult to perform reproducible polishing. Special equipment is required to prevent diffusion into the environment, bromine is highly corrosive and the life of the polishing equipment is short, and the action of this polishing liquid is close to chemical polishing, and it is easy to cause waviness on the polishing surface. There is.
本発明の目的は上記従来の研磨方法の欠点を解消し、取
扱いが容易で、人体や機械装置に対して害が無く、適切
な加工能率と高い加工精度の得られる研磨方法を提供す
ることにある。An object of the present invention is to solve the above-mentioned drawbacks of the conventional polishing method, to provide a polishing method that is easy to handle, has no harm to human bodies and mechanical devices, and has suitable processing efficiency and high processing accuracy. is there.
この目的を達成するため本発明の研磨方法は、酸化剤を
0.5重量％以上溶解含有せしめ、コロイダルシリカを0.5
〜20重量％懸濁せしめた水性研磨液を用いる点に特徴が
ある。To achieve this object, the polishing method of the present invention uses an oxidizing agent.
0.5% by weight or more of the colloidal silica is dissolved and contained.
It is characterized in that it uses an aqueous polishing liquid that is suspended up to 20% by weight.
酸化剤は水に溶解し得るものであれば良く、過炭酸ナト
リウム、次亜塩素酸ナトリウム、過酸化水素等が挙げら
れ、単独で又は２種以上を混合して用いても良い。酸化
剤は0.5重量％以上溶解含有されていることが必要で、
濃度が高い程研磨速度は大きくなるが、あまり濃度を高
くするとコロイダルシリカのゲル化を助長したり、溶解
度近くの濃度では晶出が起り、スクラッチを生じる結果
となるので、酸化剤の濃度は５〜20重量％とするのが適
当である。Any oxidizing agent may be used as long as it is soluble in water, and examples thereof include sodium percarbonate, sodium hypochlorite, hydrogen peroxide, and the like, and may be used alone or in combination of two or more kinds. It is necessary that the oxidant is dissolved and contained in an amount of 0.5% by weight or more,
The higher the concentration, the higher the polishing rate. However, if the concentration is too high, the gelling of colloidal silica is promoted, and if the concentration is close to the solubility, crystallization occurs, resulting in scratching. It is suitable to be up to 20% by weight.
コロイダルシリカは0.5〜20重量％とする必要がある。
0.5重量％未満では研磨速度が遅過ぎて能率的でなく、2
0重量％を超えるとゲル化し易くなり、ゲル化するとス
クラッチを生じるからである。好ましい範囲は２〜10重
量％である。Colloidal silica should be 0.5 to 20% by weight.
If it is less than 0.5% by weight, the polishing rate is too slow and it is not efficient.
This is because if it exceeds 0% by weight, gelation tends to occur, and if gelation occurs, scratches occur. The preferred range is 2 to 10% by weight.
本発明の研磨方法によれば、化合物半導体結晶材料に先
ず酸化剤が作用して結晶材料表面に酸化皮膜を生成し、
この酸化皮膜をコロイダルシリカが除去するというよう
に作用し、この過程が繰り返されつつ研磨が進行するも
のと考えられる。このように酸化剤とコロイダルシリカ
は、両者が研磨液中に共存して始めて研磨が可能になる
ものであって、どちらか一方のみでは研磨することがで
きない。従って酸化剤の濃度とコロイダルシリカの濃度
は適度にバランスしているのが望ましく、一方の濃度が
高過ぎても研磨の効果が充分に現れない。最も好ましい
酸化剤は過炭酸ナトリウムで、これを10重量％とした場
合コロイダルシリカは２重量％程度で10μm/時の研磨速
度が得られる。次亜塩素酸ナトリウム、過酸化水素はあ
まり研磨速度が大きくなく、それぞれ2.6μm/時、0.6μ
m/時程度である。研磨には通常の研磨装置が使え、研磨
温度は10〜40℃が適当である。According to the polishing method of the present invention, an oxidizing agent first acts on the compound semiconductor crystal material to form an oxide film on the surface of the crystal material,
It is considered that the colloidal silica acts to remove this oxide film, and polishing progresses while this process is repeated. As described above, the oxidizing agent and the colloidal silica can be polished only when both of them coexist in the polishing liquid, and cannot be polished by only one of them. Therefore, it is desirable that the concentration of the oxidant and the concentration of the colloidal silica are appropriately balanced, and even if the concentration of one is too high, the polishing effect will not be sufficiently exhibited. The most preferred oxidizing agent is sodium percarbonate, and when this is 10% by weight, colloidal silica gives a polishing rate of 10 μm / hour at about 2% by weight. Sodium hypochlorite and hydrogen peroxide do not have very high polishing rates, 2.6 μm / hour and 0.6 μm, respectively.
It is about m / hour. A normal polishing device can be used for polishing, and a polishing temperature of 10 to 40 ° C is suitable.
SiO2の平均粒径800Å、濃度40重量％、pH9〜10.5のコロ
イダルシリカ液が５重量％（コロイダルシリカとして２
重量％）、過炭酸ナトリウムが10重量％となるように純
粋にそれぞれ懸濁乃至溶解して研磨液とした。この研磨
液を通常の回転式片面研磨装置に供し、（111）面で切
り出され、＃2000のアルミナ研磨材でラッピングされた
15mm角、厚さ1mmのCdTe単結晶の鏡面研磨を２時間行っ
た。研磨布には人工皮革の上にポリウレタン樹脂をコー
ティングしたものを用い、ワークと研磨布の相対速度を
30m/分、平均加工圧76g/cm2、研磨液流下速度16ml/分と
した。5% by weight of colloidal silica liquid having an average particle size of SiO 2 of 800Å, a concentration of 40% by weight, and a pH of 9 to 10.5 (2% as colloidal silica
% By weight), and sodium percarbonate was 10% by weight, so that the polishing liquid was prepared by suspending or dissolving them. This polishing liquid was subjected to a normal rotary single-side polishing machine, cut out at the (111) plane, and lapped with # 2000 alumina abrasive.
CdTe single crystal of 15 mm square and 1 mm thickness was mirror-polished for 2 hours. The polishing cloth is made of artificial leather coated with polyurethane resin.
The processing speed was 30 m / min, the average processing pressure was 76 g / cm 2 , and the polishing liquid flow rate was 16 ml / min.
研磨後表面粗さを測定したところ、平均粗さRaは15Å以
下であった。又、微分干渉顕微鏡でスクラッチの有無を
観察したが確認されず、表面の波打ち現象も認められな
かった。When the surface roughness was measured after polishing, the average roughness Ra was 15Å or less. In addition, the presence or absence of scratches was observed with a differential interference microscope, but it was not confirmed, and no waviness was observed on the surface.
以上述べたように本発明法に用いる研磨液は人体に有害
なガスの発生がないので環境維持に特別の設備を設ける
必要がなく、又、腐食性もないので取扱いが容易でしか
も機械装置の寿命も延び、しかも適度な加工能率と高い
加工精度が得られ、実用上の効果は極めて大きい。As described above, since the polishing liquid used in the method of the present invention does not generate harmful gas to human body, it is not necessary to install special equipment for environment maintenance, and since it is not corrosive, it is easy to handle and can be used for mechanical devices. The service life is extended, and in addition, appropriate processing efficiency and high processing accuracy are obtained, and the practical effect is extremely large.
Claims (1)
ロイダルシリカが0.5〜20重量％懸濁された水性研磨液
を用いて半導体結晶材料を鏡面研磨することを特徴とす
る、半導体結晶材料の研磨方法。1. A semiconductor crystal material, characterized in that the semiconductor crystal material is mirror-polished using an aqueous polishing liquid containing 0.5% by weight or more of an oxidizing agent and 0.5-20% by weight of colloidal silica suspended therein. Polishing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61000767A JPH0712590B2 (en) | 1986-01-08 | 1986-01-08 | Method for polishing semiconductor crystal material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61000767A JPH0712590B2 (en) | 1986-01-08 | 1986-01-08 | Method for polishing semiconductor crystal material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62162461A JPS62162461A (en) | 1987-07-18 |
| JPH0712590B2 true JPH0712590B2 (en) | 1995-02-15 |
Family
ID=11482845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61000767A Expired - Lifetime JPH0712590B2 (en) | 1986-01-08 | 1986-01-08 | Method for polishing semiconductor crystal material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0712590B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02114526A (en) * | 1988-10-24 | 1990-04-26 | Shin Etsu Handotai Co Ltd | Silicon wafer and polishing method thereof and semiconductor electronic device using this silicon wafer |
| JP2006523756A (en) * | 2003-04-16 | 2006-10-19 | ジェントロール | Aqueous polyurethane composition and synthetic leather having novel structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3429080A (en) * | 1966-05-02 | 1969-02-25 | Tizon Chem Corp | Composition for polishing crystalline silicon and germanium and process |
| JPS5344273A (en) * | 1976-09-30 | 1978-04-20 | Pilot Precision | Apparatus for opening and closing box |
| JPS58145604A (en) * | 1982-02-18 | 1983-08-30 | Nippon Telegr & Teleph Corp <Ntt> | Polishing of indium phosphide |
-
1986
- 1986-01-08 JP JP61000767A patent/JPH0712590B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62162461A (en) | 1987-07-18 |
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