JPH0712911Y2 - Pressure transducer - Google Patents
Pressure transducerInfo
- Publication number
- JPH0712911Y2 JPH0712911Y2 JP1988159035U JP15903588U JPH0712911Y2 JP H0712911 Y2 JPH0712911 Y2 JP H0712911Y2 JP 1988159035 U JP1988159035 U JP 1988159035U JP 15903588 U JP15903588 U JP 15903588U JP H0712911 Y2 JPH0712911 Y2 JP H0712911Y2
- Authority
- JP
- Japan
- Prior art keywords
- base
- housing
- pressure
- pedestal
- conversion element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Measuring Fluid Pressure (AREA)
Description
本考案は、被測定媒体がガス等の圧縮性流体の圧力測定
をするための圧力変換器に関する。The present invention relates to a pressure converter for measuring the pressure of a compressible fluid such as a gas to be measured.
従来、第２図に示す構成の圧力変換器10が知られてい
る。その圧力変換器10は、半導体圧力変換素子11を一方
の端面に接合した基台12の他方の端面に直接設けられた
ネジ部12aを利用して被取付部18に取付ける。そして、
被測定媒体の圧力をその基台12の中空である圧力導入部
12bから半導体圧力変換素子11に導入させるようにして
いる。基台12とハウジング13とは溶接等にて一体とさ
れ、そのハウジング13の内室13a内に半導体圧力変換素
子11は配設されている。ハウジング13からは半導体圧力
変換素子11からの配線16等を内蔵する配管部14が基台12
とは反対側に配設されており、配管部14をハウジング13
から外へ取り出す位置には、配管部14を保護するための
カバー15が配設されている。 この圧力変換器10は、その基台12の一端面に半導体圧力
変換素子11が接合されており、基台12の他端面のネジ部
12aを被取付部18に締め付けることによる応力歪みが半
導体圧力変換素子11の感圧ダイヤフラム部（図示略）に
伝わる。すると、感圧ダイヤフラム部が受ける歪みによ
り半導体圧力変換素子11の温度特性等が変化してしま
い、その出力値に誤差が生じる。従って、取付け時の歪
みによる半導体圧力変換素子11への影響を避けるために
基台12にはネジ部12aと半導体圧力変換素子11の接合面
との間に切欠き部12cが設けてある。この切欠き部12cに
より半導体圧力変換素子11が受ける取付け時の応力歪み
による影響は軽減される。Conventionally, a pressure converter 10 having a structure shown in FIG. 2 is known. The pressure converter 10 is attached to the mounted portion 18 by using a screw portion 12a directly provided on the other end surface of the base 12 in which the semiconductor pressure conversion element 11 is joined to one end surface. And
The pressure of the medium to be measured is a hollow pressure introducing portion of the base 12.
The semiconductor pressure conversion element 11 is introduced from 12b. The base 12 and the housing 13 are integrated by welding or the like, and the semiconductor pressure conversion element 11 is arranged in the inner chamber 13a of the housing 13. From the housing 13, a piping portion 14 containing wiring 16 and the like from the semiconductor pressure conversion element 11 is built into a base 12.
Is installed on the opposite side of the
A cover 15 for protecting the pipe portion 14 is provided at a position where the pipe portion 14 is taken out from the outside. In this pressure converter 10, a semiconductor pressure conversion element 11 is joined to one end surface of a base 12 thereof, and a screw portion of the other end surface of the base 12 is joined.
The stress strain caused by tightening 12a to the mounted portion 18 is transmitted to the pressure sensitive diaphragm portion (not shown) of the semiconductor pressure conversion element 11. Then, the temperature characteristics and the like of the semiconductor pressure conversion element 11 change due to the strain applied to the pressure-sensitive diaphragm portion, and an error occurs in its output value. Therefore, in order to avoid the influence on the semiconductor pressure converting element 11 due to the strain at the time of attachment, the base 12 is provided with the notch 12c between the screw portion 12a and the joint surface of the semiconductor pressure converting element 11. The notch 12c reduces the influence of stress strain on the semiconductor pressure conversion element 11 at the time of mounting.
ここで、この圧力変換器10を高温下で使用しようとする
と、高温度における熱応力による歪みを新たに考慮しな
ければならない。つまり、この熱応力による歪みは、例
え基台12に切欠き部12cを有していても、取付け時の応
力歪みを増幅するように作用し、その影響を増大させ
る。又、基台12に直接半導体圧力変換素子11が接合され
ているので、シリコン等から成る半導体圧力変換素子11
と金属材料から成る基台13との熱膨張率の違いによる歪
みを除去することが不可能である。更に、従来の圧力検
出器10ではネジ部12aを被取付部18に締め付けた時の応
力歪みを半導体圧力変換素子11に極力伝達させないため
にネジ部12aの設けられた圧力導入部12bの開口面側と半
導体圧力変換素子11の接合面との距離を長くしている
が、被測定媒体がガス等の気体で圧縮性流体である場
合、圧力変換器10の圧力導入部12bを長くしたことが影
響して応答性を悪くしていた。この応答性を考慮した圧
力変換器としては、シリコンオイルを圧力伝達媒体とし
て密封した所謂シールダイヤフラム型圧力変換器が知ら
れている。その使用されるシリコンオイルは非圧縮性で
化学的に不活性であるが、熱膨張係数が大きく熱膨張に
よる体積変化が大きいために、シリコンオイルを利用し
た圧力変換器を高温下で使用することは困難であった。 本考案は、上記の課題を解決するために成されたもので
あり、その目的とするところは、圧縮性流体の被測定媒
体に対して応答性が良く、取付け時の歪みの影響がな
く、高温度で使用可能な圧力変換器を提供することであ
る。If the pressure transducer 10 is to be used at high temperature, strain due to thermal stress at high temperature must be newly taken into consideration. That is, the strain due to the thermal stress acts to amplify the stress strain at the time of mounting even if the base 12 has the notch 12c, and increases the influence. Further, since the semiconductor pressure conversion element 11 is directly bonded to the base 12, the semiconductor pressure conversion element 11 made of silicon or the like is used.
It is impossible to remove the strain due to the difference in coefficient of thermal expansion between the base and the base 13 made of a metal material. Further, in the conventional pressure detector 10, the opening surface of the pressure introducing portion 12b provided with the screw portion 12a in order to prevent stress strain when the screw portion 12a is fastened to the attached portion 18 from being transmitted to the semiconductor pressure conversion element 11 as much as possible. Although the distance between the side and the joint surface of the semiconductor pressure conversion element 11 is long, when the medium to be measured is a gas such as a gas and is a compressible fluid, the pressure introducing portion 12b of the pressure converter 10 may be lengthened. It affected and made responsiveness worse. A so-called seal diaphragm type pressure transducer in which silicone oil is hermetically sealed as a pressure transmission medium is known as a pressure transducer in consideration of this responsiveness. The silicone oil used is incompressible and chemically inert, but because of its large coefficient of thermal expansion and large volume change due to thermal expansion, it is necessary to use a pressure transducer using silicone oil at high temperature. Was difficult. The present invention has been made to solve the above problems, and an object of the present invention is to have a good responsiveness to a medium to be measured of a compressive fluid, which is free from the influence of distortion during mounting. It is to provide a pressure transducer that can be used at high temperatures.
上記課題を解決するための考案の構成は、 前面に形成された被測定媒体の圧力を導入する導入口と
該導入口を開放端とする円筒状の内室と導入口付近の外
周壁に形成された取付け用のネジ部とを有する円筒状の
ハウジングと、 ハウジングの内室に嵌入され導入口と反対側で該ハウジ
ングに接合されるとともに、側面に円環状の切欠き部を
有し、配線を配設するための中空部が形成された円筒状
の基台と、 基台の導入口側に位置する端面に接合された中空部を有
する台座と、 台座の導入口側に位置する端面に接合された半導体変換
素子とを備え、 隣接する基台及び台座と台座及び半導体変換素子は、相
互いの部材同士の熱膨張係数が近似される部材であるこ
とを特徴とする。The structure of the device for solving the above-mentioned problems is formed in an inlet formed on the front surface for introducing the pressure of the medium to be measured, a cylindrical inner chamber having the inlet as an open end, and an outer peripheral wall near the inlet. A cylindrical housing having an attached mounting screw portion and a housing which is fitted into the inner chamber of the housing and is joined to the housing on the side opposite to the introduction port, and has a circular ring-shaped cutout portion on the side surface. A cylindrical base in which a hollow part for arranging is formed, a pedestal having a hollow part joined to the end surface located on the inlet side of the base, and an end surface located on the inlet side of the pedestal. It is characterized in that it comprises a joined semiconductor conversion element, and the adjacent base and pedestal and the pedestal and semiconductor conversion element are members whose thermal expansion coefficients are similar to each other.
圧力変換器はハウジングのネジ部により取付けられ、そ
の時発生する応力歪みが高温下において増大するが、ハ
ウジングと基台とは別部材を接合して構成され、基台は
充分な長さとその側面に切欠き部を有するので、ハウジ
ングのネジ部に発生した応力歪みは基台への先端へ伝わ
り難い。又、半導体圧力変換素子と基台との間には、両
者の熱膨張係数に近似した中空部を有する台座が存在す
るために、半導体圧力変換素子には応力歪み及び熱歪み
が伝搬し難い。よって、正確な圧力を検出することが可
能となる。さらに、基台と接合された半導体圧力変換素
子はハウジングの内室で導入口側近傍に配設されること
となり、被測定媒体の圧力が半導体圧力変換素子に至る
までの距離が短いので応答性が良い。The pressure transducer is attached by the screw part of the housing, and the stress strain generated at that time increases at high temperature, but it is constructed by joining the housing and the base separately from each other, and the base has a sufficient length and its side surface. Since it has a notch, it is difficult for stress strain generated in the screw part of the housing to be transmitted to the tip of the base. Further, between the semiconductor pressure conversion element and the base, there is a pedestal having a hollow portion that approximates the thermal expansion coefficient of both, so that stress strain and thermal strain do not easily propagate to the semiconductor pressure conversion element. Therefore, it becomes possible to detect an accurate pressure. In addition, the semiconductor pressure conversion element joined to the base is placed in the inner chamber of the housing near the inlet side, and the distance from the pressure of the medium to be measured to the semiconductor pressure conversion element is short, so the responsiveness is high. Is good.
以下、本考案を具体的な実施例に基づいて説明する。 第１図は本考案に係る圧力変換器20である。 圧力変換器20は被測定媒体の圧力Ｐに対して、出力信号
を出力する半導体圧力変換素子21とその半導体圧力変換
素子21を載置する台座22とそれらを載置する細長い基台
23とを各々接合して構成している。そして、その基台23
はハウジング24の内室24aの導入口24bと反対側である接
合部24dで接合されている。この基台23を接合している
ハウジング24の接合部24dはハウジング24の内室24a側か
ら奥に向かってテーパ状に細くなっている。又、ハウジ
ング24の導入口24bには圧力測定における応答性に支障
がない程度に複数の穴を設けたキャップ25が取付けられ
ている。又、被測定媒体の圧力Ｐに対してその電気伝導
度が変化する図示しないサファイア製ダイヤフラムを有
する半導体圧力変換素子21と接合される台座22は上記サ
ファイアと熱膨張係数の近似したガラス材から成り、そ
の台座22と接合される基台23はガラス材と熱膨張係数の
近似したセラミック材から成る。台座22は円筒状で、そ
の台座22には中空部22a、又、基台23は細長い略円柱状
で、その基台23には複数の中空部23aが設けられてい
る。そして、台座22の中空部22a内と基台23の複数の中
空部23a内には半導体圧力変換素子21からの配線26が配
設されている。更に、基台23はその外周に円環状の切欠
き部23bを設けている。そして、半導体圧力変換素子21
の配線26は、台座22及び基台23の円筒状の内部を通って
ハウジング24の内室24aの導入口24bとは反対側に導かれ
ており、配線26等をハウジング24から外へ取り出す位置
には、配線26等を保護するためのカバー28が配設されて
いる。 上記構成の圧力変換器20は被測定媒体の圧力Ｐに対向す
るようにハウジング24のネジ部24cにより被取付部30に
取付けられる。この時、ハウジング24と被取付部30との
間には締め付けによる応力歪みが生じる。この歪みは、
ハウジング24のネジ部24cからその接合部24dを介して基
台23、台座22、半導体圧力変換素子21へと伝達される。
上述のように、ハウジング24と充分な長さを有する基台
23とを接合して成ることにより、ハウジング24における
基台23との接合部24dから先には歪みの影響を及ぼすこ
とが少ない。 そして、半導体圧力変換素子21と台座22と基台23とは上
述の材質等により構成され熱膨張係数が近似しているの
で、高温下における使用に対して生じる熱応力歪みにつ
いても、圧力変換器20の測定圧力に影響を及ぼすことを
軽減できる。又、基台23は細長い形状であり、半導体圧
力変換素子21の接合されたその長手方向の端面と反対の
端面とは距離が充分にあるので、ハウジング24の接合部
24dとの間に生じる熱応力歪みは軽減される。更に、基
台23に設けられた切欠き部23bは基台23の熱応力歪みと
共に捩じれによる歪みを防止している。 更に、上述の構成で明らかなように、圧力変換器20の半
導体圧力変換素子21はハウジング24の内室24a内でネジ
部24cの先端近くに設けることが可能となる。従って、
被測定媒体の圧力Ｐに対してハウジング24の導入口24b
は短くなり、結果として圧力変化に対して応答性が良い
圧力変換器20となる。Hereinafter, the present invention will be described based on specific embodiments. FIG. 1 shows a pressure converter 20 according to the present invention. The pressure converter 20 includes a semiconductor pressure conversion element 21 that outputs an output signal with respect to the pressure P of the medium to be measured, a pedestal 22 on which the semiconductor pressure conversion element 21 is mounted, and an elongated base on which they are mounted.
23 and 23 are joined to each other. And the base 23
Are joined at a joint 24d on the opposite side of the inlet 24b of the inner chamber 24a of the housing 24. The joint 24d of the housing 24 that joins the base 23 is tapered from the inner chamber 24a side of the housing 24 toward the inner side. Further, a cap 25 having a plurality of holes is attached to the inlet 24b of the housing 24 so that the response in pressure measurement is not hindered. The pedestal 22 joined to the semiconductor pressure conversion element 21 having a sapphire diaphragm (not shown) whose electric conductivity changes with respect to the pressure P of the medium to be measured is made of sapphire and a glass material having a thermal expansion coefficient close to that of the sapphire. The base 23 joined to the pedestal 22 is made of a glass material and a ceramic material having a similar thermal expansion coefficient. The pedestal 22 has a cylindrical shape, the pedestal 22 has a hollow portion 22a, and the base 23 has an elongated substantially cylindrical shape. The base 23 has a plurality of hollow portions 23a. Wirings 26 from the semiconductor pressure conversion element 21 are arranged in the hollow portion 22a of the pedestal 22 and in the plurality of hollow portions 23a of the base 23. Further, the base 23 is provided with an annular cutout portion 23b on the outer periphery thereof. Then, the semiconductor pressure conversion element 21
The wiring 26 is guided through the cylindrical insides of the pedestal 22 and the base 23 to the opposite side of the inlet 24b of the inner chamber 24a of the housing 24, and the position where the wiring 26 and the like are taken out from the housing 24. A cover 28 for protecting the wiring 26 and the like is provided in the. The pressure converter 20 having the above structure is attached to the attached portion 30 by the screw portion 24c of the housing 24 so as to face the pressure P of the medium to be measured. At this time, stress strain is generated between the housing 24 and the mounted portion 30 due to tightening. This distortion is
It is transmitted from the threaded portion 24c of the housing 24 to the base 23, the pedestal 22, and the semiconductor pressure conversion element 21 via the joint 24d.
As mentioned above, the base with housing 24 and sufficient length
By being joined with 23, the influence of distortion is less likely to occur from the joint 24d of the housing 24 with the base 23. Since the semiconductor pressure conversion element 21, the pedestal 22, and the base 23 are made of the above-mentioned materials and have similar thermal expansion coefficients, the pressure converter can also be used for thermal stress strain caused by use at high temperatures. The influence on the measured pressure of 20 can be reduced. Further, the base 23 has an elongated shape, and there is a sufficient distance between the end face in the longitudinal direction and the end face opposite to the end face where the semiconductor pressure converting element 21 is joined.
The thermal stress strain generated between 24d is reduced. Furthermore, the notch 23b provided in the base 23 prevents thermal stress distortion of the base 23 as well as distortion due to twisting. Further, as is apparent from the above configuration, the semiconductor pressure conversion element 21 of the pressure converter 20 can be provided in the inner chamber 24a of the housing 24 near the tip of the screw portion 24c. Therefore,
The inlet 24b of the housing 24 with respect to the pressure P of the medium to be measured
Is shortened, and as a result, the pressure transducer 20 has good responsiveness to pressure changes.
本考案は、ハウジングの内室に嵌入され導入口と反対側
で該ハウジングに接合されるとともに、側面に円環状の
切欠き部を有した円筒状の基台と、半導体変換素子と基
台の導入口側に位置する端面との間に、両者の熱膨張係
数に近似した部材の中空部を有する台座を設けたので、
取付け時の応力歪みは高温下においても圧力測定への影
響が少なく、被測定媒体が圧縮性流体であっても圧力変
化に対する応答性が良いという効果を有する。According to the present invention, there is provided a cylindrical base having a circular notch on a side surface thereof, which is fitted into the inner chamber of the housing and joined to the housing on the side opposite to the introduction port, and the semiconductor conversion element and the base. Between the end face located on the inlet side, a pedestal having a hollow portion of a member that approximates the thermal expansion coefficient of both is provided,
The stress strain at the time of mounting has little effect on pressure measurement even at high temperature, and has an effect of good response to pressure change even if the medium to be measured is a compressive fluid.
第１図は本考案の具体的な一実施例に係る圧力変換器を
示した部分縦断面図。第２図は従来の圧力変換器を示し
た縦断面図である。 20…圧力変換器、21…半導体圧力変換素子 23…基台、23a…中空部、23b…切欠き部 24…ハウジング、24a…内室 24b…導入口、24c…ネジ部 Ｐ…被測定媒体の圧力FIG. 1 is a partial vertical sectional view showing a pressure transducer according to a specific embodiment of the present invention. FIG. 2 is a vertical sectional view showing a conventional pressure converter. 20 ... Pressure converter, 21 ... Semiconductor pressure converting element 23 ... Base, 23a ... Hollow part, 23b ... Notch part 24 ... Housing, 24a ... Inner chamber 24b ... Inlet port, 24c ... Screw part P ... Measured medium pressure
Claims (1)
する導入口と該導入口を開放端とする円筒状の内室と前
記導入口付近の外周壁に形成された取付け用のネジ部と
を有する円筒状のハウジングと、 前記ハウジングの内室に嵌入され前記導入口と反対側で
該ハウジングに接合されるとともに、側面に円環状の切
欠き部を有し、配線を配設するための中空部が形成され
た円筒状の基台と、 前記基台の前記導入口側に位置する端面に接合された中
空部を有する台座と、 前記台座の前記導入口側に位置する端面に接合された半
導体変換素子とを備え、 隣接する前記基台及び前記台座と前記台座及び前記半導
体変換素子は、相互いの部材同士の熱膨張係数が近似さ
れる部材であることを特徴とする圧力変換器。1. An introduction port for introducing pressure of a medium to be measured formed on a front surface, a cylindrical inner chamber having the introduction port as an open end, and a mounting screw formed on an outer peripheral wall near the introduction port. A cylindrical housing having a portion and a housing that is fitted into the inner chamber of the housing and is joined to the housing on the side opposite to the introduction port, and has an annular notch on the side surface, and arranges the wiring. A cylindrical base having a hollow portion for forming, and a pedestal having a hollow portion joined to an end surface of the base that is located on the inlet side, and an end surface of the pedestal that is located on the inlet side. And a semiconductor conversion element joined together, wherein the base and the pedestal and the pedestal and the semiconductor conversion element adjacent to each other are members whose thermal expansion coefficients are close to each other. converter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988159035U JPH0712911Y2 (en) | 1988-12-07 | 1988-12-07 | Pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988159035U JPH0712911Y2 (en) | 1988-12-07 | 1988-12-07 | Pressure transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0279437U JPH0279437U (en) | 1990-06-19 |
| JPH0712911Y2 true JPH0712911Y2 (en) | 1995-03-29 |
Family
ID=31439889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988159035U Expired - Lifetime JPH0712911Y2 (en) | 1988-12-07 | 1988-12-07 | Pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0712911Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6076126B2 (en) * | 2013-02-19 | 2017-02-08 | 株式会社堀場エステック | Structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS44149Y1 (en) * | 1965-06-18 | 1969-01-07 | ||
| US3697917A (en) * | 1971-08-02 | 1972-10-10 | Gen Electric | Semiconductor strain gage pressure transducer |
-
1988
- 1988-12-07 JP JP1988159035U patent/JPH0712911Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0279437U (en) | 1990-06-19 |
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