JPH07140663A - PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SAME - Google Patents

PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SAME

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Publication number
JPH07140663A
JPH07140663A JP5154805A JP15480593A JPH07140663A JP H07140663 A JPH07140663 A JP H07140663A JP 5154805 A JP5154805 A JP 5154805A JP 15480593 A JP15480593 A JP 15480593A JP H07140663 A JPH07140663 A JP H07140663A
Authority
JP
Japan
Prior art keywords
carbon atoms
organic group
resin composition
carboxylic acid
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5154805A
Other languages
Japanese (ja)
Inventor
Takao Miwa
崇夫 三輪
Yoshiaki Okabe
義昭 岡部
Mina Ishida
美奈 石田
Akio Takahashi
昭雄 高橋
Shunichi Numata
俊一 沼田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Hitachi Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP5154805A priority Critical patent/JPH07140663A/en
Priority to KR1019940014734A priority patent/KR950001419A/en
Publication of JPH07140663A publication Critical patent/JPH07140663A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C271/00Derivatives of carbamic acids, i.e. compounds containing any of the groups, the nitrogen atom not being part of nitro or nitroso groups
    • C07C271/06Esters of carbamic acids
    • C07C271/08Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms
    • C07C271/10Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C271/14Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of hydrocarbon radicals substituted by halogen atoms or by nitro or nitroso groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/04Polymeric products of isocyanates or isothiocyanates with vinyl compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)

Abstract

(57)【要約】 【目的】水系溶剤で現像可能なポジ型感光性樹脂組成物
を提供すること。 【構成】カルボン酸基を有する高分子と電磁波の照射に
より塩基を発生する光塩基発生剤を含むことを特徴とす
る感光性樹脂組成物。 【効果】水溶剤系で現像可能なポジ型感光性樹脂組成物
の提供で、環境汚染防止,作業環境の改善,適用製品の
高密度,高信頼度化が達成される。
(57) [Summary] [Object] To provide a positive photosensitive resin composition developable with an aqueous solvent. A photosensitive resin composition comprising a polymer having a carboxylic acid group and a photobase generator capable of generating a base upon irradiation with electromagnetic waves. [Effect] By providing a positive photosensitive resin composition that can be developed with a water solvent system, it is possible to prevent environmental pollution, improve the working environment, and increase the density and reliability of applied products.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は新規な感光性樹脂組成物
及び該組成物を用いたパターン形成方法及びそれを用い
た電子装置の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel photosensitive resin composition, a pattern forming method using the composition and an electronic device manufacturing method using the same.

【0002】[0002]

【従来の技術】感光性樹脂組成物は、露光した部分がエ
ッチングされるポジ型と露光されなかった部分がエッチ
ングされるネガ型に分類される。ネガ型は現像液による
露光部の膨潤が起るため高解像度の微細加工がむずかし
い。また、環境汚染防止,作業環境改善の観点から、塩
素系溶剤や有機溶剤系の現像液を用いる感光性樹脂組成
物にはその代替えとなりうる水系溶剤系の現像液を用い
る感光性樹脂組成物の開発が強く望まれている。
2. Description of the Related Art Photosensitive resin compositions are classified into a positive type in which an exposed portion is etched and a negative type in which an unexposed portion is etched. In the negative type, high-resolution fine processing is difficult because the exposed area swells with the developer. Further, from the viewpoints of preventing environmental pollution and improving the working environment, a photosensitive resin composition using a chlorine-based solvent or organic solvent-based developer can be used as a substitute for the photosensitive resin composition using an aqueous solvent-based developer. Development is strongly desired.

【0003】従来、有機感光性樹脂としては、耐熱性に
すぐれたポリイミド系が広く検討されている。
Conventionally, as the organic photosensitive resin, a polyimide system having excellent heat resistance has been widely studied.

【0004】例えば、ポリイミド前駆体であるポリイミ
ド酸を基板にコーティングし、熱処理を行ってポリイミ
ドに変換したのち、そのポリイミド膜上にフォトレジス
トのレリーフパターンを形成させ、ヒドラジン系エッチ
ング剤によりポリイミドを選択的にエッチングしてレリ
ーフパターンをポリイミドに転写させている。
For example, after coating a substrate with polyimide acid, which is a polyimide precursor, and performing heat treatment to convert it into polyimide, a relief pattern of a photoresist is formed on the polyimide film, and the polyimide is selected by a hydrazine-based etching agent. Etching is performed to transfer the relief pattern to polyimide.

【0005】しかし、上記工程におけるポリイミドのパ
ターン化には、フォトレジストの塗布や剥離などの工程
が含まれるため、プロセスが非常に煩雑となる。また、
レリーフパターンをレジストを介して転写することによ
る寸法精度の低下が起こる。従って、微細加工工程の簡
略化や高精度化を図るため、直接光で微細加工可能な耐
熱材料の開発が望まれていた。
However, since the patterning of the polyimide in the above steps includes steps such as photoresist coating and peeling, the process becomes very complicated. Also,
The transfer of the relief pattern through the resist causes a decrease in dimensional accuracy. Therefore, in order to simplify the microfabrication process and improve the precision, it has been desired to develop a heat resistant material that can be microfabricated by direct light.

【0006】上記目的のための材料として、ポリアミド
酸と重クロム酸塩からなる感光性耐熱材料(特公昭49−1
7374号公報),ピロメリット酸誘導体から誘導される感
光性ポリアミド酸(特開昭49−112241号公報),ポリア
ミド酸と不飽和アミンから成る感光性耐熱材料(特開昭
54−145794号公報),ポリアミド酸と飽和エポキシを反
応させて成る感光性耐熱材料(特開昭55−45746 号公
報)などの材料が提案された。しかしながら、上記の感
光材料はすべて架橋反応を用いたネガ型である。架橋反
応を用いた感光材料は、前述のように現像液による露光
部の膨潤が起こるために高解像度の微細加工を行う上で
不利となる。一方、ポジ型の感光性耐熱材料としては、
ポジ型感光性耐熱材料(特公平1−59571 号公報),
(特開昭62−229242号)等が提案されている。
As a material for the above purpose, a photosensitive heat-resistant material comprising polyamic acid and dichromate (Japanese Patent Publication No. Sho 49-1).
7374), a photosensitive polyamic acid derived from a pyromellitic acid derivative (JP-A-49-112241), and a photosensitive heat-resistant material comprising a polyamic acid and an unsaturated amine (JP-A-49-112).
54-145794), a photosensitive heat-resistant material obtained by reacting a polyamic acid with a saturated epoxy (JP-A-55-45746), and other materials have been proposed. However, the above-mentioned light-sensitive materials are all negative type using a crosslinking reaction. A light-sensitive material using a cross-linking reaction is disadvantageous in performing high-resolution fine processing because the exposed portion swells with the developer as described above. On the other hand, as a positive type photosensitive heat resistant material,
Positive type photosensitive heat-resistant material (Japanese Patent Publication No. 1-59571)
(JP-A-62-229242) and the like have been proposed.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、上記の
ポジ型感光性耐熱材料を得るには、酸塩化物をモノマー
として用いる必要があるため、合成に際しては反応温
度,水分の除去など条件を厳密に制御する必要がある。
また生成した前駆体についても塩素イオンの除去が必要
となるなど純度の点で問題がある。また上記ポジ型感光
性耐熱材料は感光基がポリイミド前駆体に強固な共有結
合で付加されているために、イミド化過程で脱離しにく
く、膜特性に悪影響を与えるなどの問題がある。また、
現像特性についても不十分であった。
However, in order to obtain the above-mentioned positive type photosensitive heat-resistant material, it is necessary to use an acid chloride as a monomer. Therefore, the reaction temperature, the removal of water and the like must be strictly controlled during the synthesis. Need to control.
Further, the produced precursor also has a problem in terms of purity such as the need to remove chlorine ions. In addition, since the positive photosensitive heat-resistant material has a photosensitive group attached to the polyimide precursor by a strong covalent bond, it is difficult to be removed during the imidization process, and there is a problem that the film characteristics are adversely affected. Also,
The developing characteristics were also insufficient.

【0008】本発明は、上記問題を解決しうる水系溶剤
で現像可能なポジ型感光性樹脂組成物及び該組成物を用
いたパターン形成方法及びそれを用いた電子装置の製造
方法を提供することを目的とする。
The present invention provides a positive photosensitive resin composition developable with an aqueous solvent which can solve the above problems, a pattern forming method using the composition, and an electronic device manufacturing method using the same. With the goal.

【0009】[0009]

【課題を解決するための手段】本発明は、前記目的を達
成するために、技術的手段が用いられる。その第1の手
段は、一般式(I)
The present invention uses technical means in order to achieve the above object. The first means is the general formula (I)

【0010】[0010]

【化11】 [Chemical 11]

【0011】(式中、Aは炭素数2以上の有機基、nは
10〜200,000 の整数、R1 は炭素数1以上の有機基,水
素,ハロゲン原子のいずれかである。)で表わされる重
合体の全重量に対してカルボキシル基の割合が20重量
%以上であり、数平均分子量が10,000〜1,000,000 のカ
ルボン酸重合体(イ)と、電磁波の照射により塩基を発
生する光塩基発生剤(ロ)を前記カルボキシル基に対し
て0.2〜2.0モル当量含むことを特徴とする感光性樹
脂組成物。
(In the formula, A is an organic group having 2 or more carbon atoms, and n is
10~200,000 integer, R 1 is either one or more organic group having carbon, hydrogen, halogen atoms. ) The carboxylic acid polymer (a) having a carboxyl group ratio of 20% by weight or more and a number average molecular weight of 10,000 to 1,000,000 with respect to the total weight of the polymer represented by A photosensitive resin composition comprising a base generator (b) in an amount of 0.2 to 2.0 molar equivalents with respect to the carboxyl groups.

【0012】第2の手段は、カルボキシル基を含む重合
体と、一般式(III)
The second means is to use a polymer containing a carboxyl group and a compound of the general formula (III)

【0013】[0013]

【化12】 [Chemical 12]

【0014】(式中、R4 は炭素数1以上の有機基,水
素,ハロゲン原子のいずれかである。pは0〜4の整数
である。また、R5,R6は炭素数12以下の有機基、R
7 は水素又は炭素数10以下の有機基である。)で表わ
される化合物を含み、水に溶解性のポジ型感光性樹脂組
成物。
(In the formula, R 4 is an organic group having 1 or more carbon atoms, hydrogen or a halogen atom. P is an integer of 0 to 4. R 5 and R 6 are 12 or less carbon atoms. Organic groups of R
7 is hydrogen or an organic group having 10 or less carbon atoms. ) A positive photosensitive resin composition containing a compound represented by the formula (1) and soluble in water.

【0015】第3の手段はカルボキシル基を含む化合物
と塩基発生剤を含み、電磁波照射によってパターン形成
可能なことを特徴とする組成物。
A third means is a composition comprising a compound containing a carboxyl group and a base generator, which can be patterned by irradiation of electromagnetic waves.

【0016】第4の手段は一般式(I)The fourth means is the general formula (I)

【0017】[0017]

【化13】 [Chemical 13]

【0018】(式中、Aは炭素数2以上の有機基、nは
10〜200,000 の整数、R1 は炭素数1以上の有機基,水
素,ハロゲン原子のいずれかである。)で表わされる重
合体の全重量に対してカルボキシル基の割合が20重量
%以上であり、数平均分子量が10,000〜1,000,000 のカ
ルボン酸重合体(イ)と、電磁波の照射により塩基を発
生する光塩基発生剤(ロ)を前記カルボキシル基に対し
て0.2〜2.0モル当量含む感光性樹脂組成物を基板上
に塗布し、乾燥する工程,遮光性マスクを介して光露光
する工程,水溶剤中で現像する工程を含むことを特徴と
するパターン形成方法。
(In the formula, A is an organic group having 2 or more carbon atoms, and n is
10~200,000 integer, R 1 is either one or more organic group having carbon, hydrogen, halogen atoms. ) The carboxylic acid polymer (a) having a carboxyl group ratio of 20% by weight or more and a number average molecular weight of 10,000 to 1,000,000 with respect to the total weight of the polymer represented by A step of coating a substrate with a photosensitive resin composition containing a base generator (b) in an amount of 0.2 to 2.0 molar equivalents with respect to the carboxyl group, and drying, and a step of exposing to light through a light-shielding mask, A pattern forming method comprising a step of developing in a water solvent.

【0019】第5の手段は一般式(I)The fifth means is the general formula (I)

【0020】[0020]

【化14】 [Chemical 14]

【0021】(式中、Aは炭素数2以上の有機基、nは
10〜200,000 の整数、R1 は炭素数1以上の有機基,
水素,ハロゲン原子のいずれかである。)で表わされる
カルボン酸重合体を含む樹脂成分の全重量に対してカル
ボキシル基の割合が20重量%以上であり、数平均分子
量が10,000〜1,000,000 のカルボン酸重合体(イ)と、
電磁波の照射により塩基を発生する光塩基発生剤(ロ)
を前記カルボキシル基に対して0.2〜2.0モル当量含
むことを特徴とする感光性樹脂組成物。
(Wherein A is an organic group having 2 or more carbon atoms, n is an integer of 10 to 200,000, R 1 is an organic group having 1 or more carbon atoms,
It is either hydrogen or a halogen atom. ) A carboxylic acid polymer (a) having a carboxyl group ratio of 20% by weight or more and a number average molecular weight of 10,000 to 1,000,000 relative to the total weight of the resin component containing the carboxylic acid polymer represented by
Photobase generator that generates a base by electromagnetic wave irradiation (b)
Is contained in an amount of 0.2 to 2.0 molar equivalents with respect to the carboxyl group.

【0022】第6の手段は、一般式(I)The sixth means is the general formula (I)

【0023】[0023]

【化15】 [Chemical 15]

【0024】(式中、Aは炭素数2以上の有機基、nは
10〜200,000 の整数、R1 は炭素数1以上の有機基,水
素,ハロゲン原子のいずれかである。)で表わされるカ
ルボン酸重合体を含む樹脂成分の全重量に対してカルボ
キシル基の割合が 20重量%以上であり、数平均分子
量が10,000〜1,000,000 のカルボン酸重合体(イ)と、
電磁波の照射により塩基を発生する光塩基発生剤(ロ)
を前記カルボキシル基に対して0.2〜2.0モル当量含
む感光性樹脂組成物を基板上に塗布し、乾燥する工程,
遮光性マスクを介して光露光する工程,水中で現像する
工程を含むことを特徴とするパターン形成方法。
(In the formula, A is an organic group having 2 or more carbon atoms, and n is
10~200,000 integer, R 1 is either one or more organic group having carbon, hydrogen, halogen atoms. ) A carboxylic acid polymer (a) having a carboxyl group ratio of 20% by weight or more and a number average molecular weight of 10,000 to 1,000,000 relative to the total weight of the resin component containing the carboxylic acid polymer represented by
Photobase generator that generates a base by electromagnetic wave irradiation (b)
A step of applying a photosensitive resin composition containing 0.2 to 2.0 molar equivalents to the carboxyl group on a substrate and drying.
A pattern forming method comprising a step of exposing to light through a light-shielding mask and a step of developing in water.

【0025】第7の手段は、(a)基板上に第1の配線を
形成した配線シートを形成する工程、(b)前記基板と配
線間および配線上に接着層を形成する工程、(c)前記接
着層を介して第2の配線を形成した配線シートを積層す
る工程、(d)前記積層した配線シートを加圧,加熱して
接着層を硬化し、前記第1の配線と第2の配線を接続す
る工程、を含む多層配線回路板の製法において、前記第
1の配線及び第2の配線の形成工程が、一般式(I)
A seventh means is (a) a step of forming a wiring sheet on which a first wiring is formed, (b) a step of forming an adhesive layer between the substrate and the wiring, and on the wiring (c) ) A step of stacking wiring sheets on which second wirings are formed via the adhesive layer, (d) the stacked wiring sheets are pressed and heated to cure the adhesive layer, and the first wiring and the second wiring In the method for manufacturing a multilayer wiring circuit board, the step of forming the first wiring and the second wiring includes:

【0026】[0026]

【化16】 [Chemical 16]

【0027】(式中、Aは炭素数2以上の有機基、nは
10〜200,000 の整数、R1 は炭素数1以上の有機基,水
素,ハロゲン原子のいずれかである。)で表わされるカ
ルボン酸重合体を含む樹脂成分の全重量に対してカルボ
キシル基の割合が20重量%以上であり、数平均分子量
が10,000〜1,000,000 のカルボン酸重合体(イ)と、電
磁波の照射により塩基を発生する光塩基発生剤(ロ)を
前記カルボキシル基に対して0.2〜2.0モル当量含む
ことを特徴とする感光性樹脂組成物を基板上に塗布し、
乾燥する工程,遮光性マスクを介して光露光する工程,
水溶剤中で現像する工程を含むことを特徴とする多層配
線回路板の製法。
(In the formula, A is an organic group having 2 or more carbon atoms, and n is
10~200,000 integer, R 1 is either one or more organic group having carbon, hydrogen, halogen atoms. ) A carboxylic acid polymer (a) having a carboxyl group ratio of 20% by weight or more and a number average molecular weight of 10,000 to 1,000,000 with respect to the total weight of the resin component containing the carboxylic acid polymer represented by A photo-base generator (b) for generating a base according to (2) is coated on a substrate, wherein the photosensitive resin composition is contained in an amount of 0.2 to 2.0 molar equivalents with respect to the carboxyl group.
A step of drying, a step of exposing light through a light-shielding mask,
A method for producing a multilayer printed circuit board, comprising the step of developing in a water solvent.

【0028】第8の発明は、大規模集積回路における回
路形成手段が、一般式(I)
According to an eighth aspect of the present invention, the circuit forming means in the large scale integrated circuit has the general formula (I).

【0029】[0029]

【化17】 [Chemical 17]

【0030】(式中、Aは炭素数2以上の有機基、nは
10〜200,000 の整数、R1 は炭素数1以上の有機基,水
素,ハロゲン原子のいずれかである。)で表わされるカ
ルボン酸重合体を含む樹脂成分の全重量に対してカルボ
キシル基の割合が 20重量%以上であり、数平均分子
量が10,000〜1,000,000 のカルボン酸重合体(イ)と、
電磁波の照射により塩基を発生する光塩基発生剤(ロ)
を前記カルボキシル基に対して0.2〜2.0モル当量含
む感光性樹脂組成物を基板上に塗布し、乾燥する工程,
遮光性マスクを介して光露光する工程,水中で現像する
工程を含むことを特徴とする大規模集積回路及び第3の
手段により提供される組成物を用いることを特徴とする
液晶配向膜パターンの形成方法を提供することにある。
(In the formula, A is an organic group having 2 or more carbon atoms, and n is
10~200,000 integer, R 1 is either one or more organic group having carbon, hydrogen, halogen atoms. ) A carboxylic acid polymer (a) having a carboxyl group ratio of 20% by weight or more and a number average molecular weight of 10,000 to 1,000,000 relative to the total weight of the resin component containing the carboxylic acid polymer represented by
Photobase generator that generates a base by electromagnetic wave irradiation (b)
A step of applying a photosensitive resin composition containing 0.2 to 2.0 molar equivalents to the carboxyl group on a substrate and drying.
A large-scale integrated circuit characterized by including a step of light exposure through a light-shielding mask and a step of developing in water, and a liquid crystal alignment film pattern characterized by using the composition provided by the third means. It is to provide a forming method.

【0031】本発明において、前記一般式(I)の構造中
のカルボン酸基を有する分子の溶解度が、塩基の存在に
よって大きく変化することを利用し達成されたものであ
る。従って、構造中にカルボン酸基を有するものであれ
ば適用可能である。カルボン酸の数平均分子量として
は、レリーフパターンの機械特性を考慮した場合10000
以上であることが望ましい、分子量の上限については特
に制限はないが、溶剤への溶解しやすさを考えた場合は
1000000 以下であることが望ましい。
The present invention has been achieved by utilizing the fact that the solubility of a molecule having a carboxylic acid group in the structure of the general formula (I) is greatly changed by the presence of a base. Therefore, any compound having a carboxylic acid group in its structure can be applied. The number average molecular weight of the carboxylic acid is 10,000 when considering the mechanical properties of the relief pattern.
It is desirable that the above, there is no particular limitation on the upper limit of the molecular weight, but when considering the ease of dissolution in a solvent
It is desirable to be 1000000 or less.

【0032】連鎖重合によってカルボン酸基を有する高
分子構造を与える繰り返し単位としては、高分子データ
ハンドブック基礎編(高分子学会編,培風館,198
6)表9.1記載のポリアクリル酸及びポリアクリル酸
アルキル誘導体、表14.1記載のマレイン酸及びその
誘導体、アレイン酸フルオロアルキル及び酢酸ビニルな
どがあげられる。ここにあげたモノマーの重合体及びこ
こにあげたモノマーを共重合成分とする高分子であれ
ば、そのまま本発明を適用することができる。また、重
合時のモノマーにカルボン酸基を含まない高分子であっ
ても、化学修飾によってカルボン酸基を導入することに
よって、本発明が適用可能になる。
As a repeating unit which gives a polymer structure having a carboxylic acid group by chain polymerization, the Polymer Data Handbook: Basic Edition (Polymer Society of Japan, Baifukan, 198)
6) Polyacrylic acid and alkyl polyacrylate derivatives shown in Table 9.1, maleic acid and its derivatives shown in Table 14.1, fluoroalkyl arenoate, vinyl acetate and the like can be mentioned. The present invention can be directly applied to polymers of the monomers listed here and polymers having the monomers listed here as a copolymerization component. Further, even in the case of a polymer that does not contain a carboxylic acid group as a monomer during polymerization, the present invention can be applied by introducing the carboxylic acid group by chemical modification.

【0033】また、前記一般式(I)が、一般式(II)The above general formula (I) is replaced by the general formula (II)

【0034】[0034]

【化18】 [Chemical 18]

【0035】(式中、R1 は前記と同じである。R2
炭素数2以上の有機基、R3 は炭素数4以上の有機基で
ある。nは前記と同じである。)である場合に、本発明
の効果がより高く発揮される。
(In the formula, R 1 is the same as above. R 2 is an organic group having 2 or more carbon atoms, R 3 is an organic group having 4 or more carbon atoms, and n is the same as above.) In some cases, the effects of the present invention are more effectively exhibited.

【0036】例えば、縮重合型の高分子としてはポリア
ミド酸やキチンがカルボン酸基を有する代表的高分子と
して挙げることができる。特に、ポリアミド酸に本発明
に適用した場合はレリーフ像を形成した後に、加熱また
は化学的にイミド化しポリイミドに変換することによっ
て、耐熱性,耐薬品性に優れたレリーフ像を得ることが
できるため、LSIの保護膜,配線基板の絶縁膜等とし
て優れた性能を発揮する。本発明で用いるポリアミド酸
はジアミンあるいはジイソシアネートと、テトラカルボ
ン酸及びその誘導体の反応によって得られる。テトラカ
ルボン酸誘導体としては、酸無水物,酸塩水物などがあ
る。酸無水物を用いると、反応性や副生成物などの点で
好ましい。本発明で用いられるジアミンと酸無水物誘導
体としては、公開特許公報昭61−181829号記載の物など
が例として挙げられる。
As the polycondensation type polymer, for example, polyamic acid and chitin can be cited as typical polymers having a carboxylic acid group. In particular, when the present invention is applied to polyamic acid, a relief image excellent in heat resistance and chemical resistance can be obtained by forming a relief image and then heating or chemically imidizing it to convert it into polyimide. Excellent performance as a protective film for LSIs, insulating film for wiring boards, etc. The polyamic acid used in the present invention is obtained by reacting a diamine or diisocyanate with a tetracarboxylic acid or its derivative. Examples of tetracarboxylic acid derivatives include acid anhydrides and acid chlorides. The use of an acid anhydride is preferable in terms of reactivity and by-products. Examples of the diamine and acid anhydride derivative used in the present invention include those described in JP-A No. 61-181829.

【0037】本発明において、前記塩基発生剤(ロ)
が、一般式(III)
In the present invention, the base generator (b)
Is the general formula (III)

【0038】[0038]

【化19】 [Chemical 19]

【0039】(式中、R4 は炭素数1以上の有機基,水
素,ハロゲン原子のいずれかである。pは0〜4の整数
である。また、R5 ,R6 は炭素数12以下の有機基、
7は水素又は炭素数10以下の有機基である。)で表
わされる化合物を使用される場合に、本発明の効果がよ
り高く発揮される。
(In the formula, R 4 is an organic group having 1 or more carbon atoms, hydrogen or a halogen atom. P is an integer of 0 to 4. R 5 and R 6 are 12 or less carbon atoms. Organic groups,
R 7 is hydrogen or an organic group having 10 or less carbon atoms. When the compound represented by the formula (1) is used, the effects of the present invention are more effectively exhibited.

【0040】具体的化合物としては、シクロヘキシルパ
ラトルエンスルホニルアミン、[[(3,5−ジメチル
ベンジル)オキシ]カルボニル]シクロヘキシルアミ
ン、[[(2,6−ジニトロベンジル)オキシ]カルボ
ニル]シクロヘキシルアミン、N−[[(2,6−ジニ
トロフェニル)−1−メチルメトキシ]カルボニル]シ
クロヘキシルアミン、N−[[(2,6−ジニトロフェ
ニル)−1−(2′,6′−ジニトロフェニル)メトキ
シ]カルボニル]シクロヘキシルアミン、N−[[(2
−ニトロフェニル)−1−(2′−ニトロフェニル)メ
トキシ]カルボニル]シクロヘキシルアミン、[[(2
−ニトロベンジル)オキシ]カルボニル]シクロヘキシ
ルアミン、N−[[(2−ニトロフェニル)−1−メチ
ルメトキシ]カルボニル]シクロヘキシルアミン、
[[(2−ニトロベンジル)オキシ]カルボニル]ピペ
リジン、ビス[[(2−ニトロベンジル)オキシ]カル
ボニル]ヘキサン1,6−ジアミンなどが挙げられる。
これらの化合法と構造については、J.Am.Chem.Soc.199
1,113,4303−4313,Fahey,J.T.and Frechet J.M.
J.(1991)Proc.SPIE,1466,67,Frechet,J.M.J.,Stan
ciulescu,M.,Lizawa,T.,and Willson,C.G.,(1989)Pr
oc.ACS Div.Polym.Mater.Sci.Eng.,60,170.Grazian
o,K.A.,Thompson,S.D.,and Winkle,M.R.(1990)Proc.SP
IE,1466,75.などに記載されており、この分野の研究
者であれば必要とする塩基発生剤を容易に合成可能であ
る。また、コバルト(III)アミン塩,コバルト(III)
アルキルアミン塩、α−ケトカルボン酸アンモニウム
塩,フェニルグリオキシ酸アンモニウム塩、4−メチル
フェニルスルホンアミド、N−シクロヘキシル−4−メ
チルフェニルスルホンアミドなども有用である。これら
の化合物はいずれも電磁波の照射により分解し塩基を発
生する。これらのうち化3式で表される塩基発生剤は、
発生効率が高くすぐれた特性を得る。構造式中R7 で表
される基はレリーフパターン形成時の膜ベりの点から、
炭素数10以下の有機基であることが望ましい。また、
本発明で用いる光塩基発生剤は上記の構造に拘らず、電
磁波の照射によって水溶性の脂肪族アミンを発生するも
のであれば用いることができる。塩形成によって水溶性
を得るためには、一般に炭素数12以下のアミンが望ま
しい。本発明において、電磁波とは波長が10μm〜1
nm、好ましくは200〜900nmの光線を用いるこ
とが望ましい。
Specific compounds include cyclohexyl paratoluene sulfonylamine, [[(3,5-dimethylbenzyl) oxy] carbonyl] cyclohexylamine, [[(2,6-dinitrobenzyl) oxy] carbonyl] cyclohexylamine, N. -[[(2,6-Dinitrophenyl) -1-methylmethoxy] carbonyl] cyclohexylamine, N-[[(2,6-dinitrophenyl) -1- (2 ', 6'-dinitrophenyl) methoxy] carbonyl ] Cyclohexylamine, N-[[(2
-Nitrophenyl) -1- (2'-nitrophenyl) methoxy] carbonyl] cyclohexylamine, [[(2
-Nitrobenzyl) oxy] carbonyl] cyclohexylamine, N-[[(2-nitrophenyl) -1-methylmethoxy] carbonyl] cyclohexylamine,
[[(2-Nitrobenzyl) oxy] carbonyl] piperidine, bis [[(2-nitrobenzyl) oxy] carbonyl] hexane 1,6-diamine and the like can be mentioned.
For details on these compounds and structures, see J. Am. Chem. Soc. 199.
1, 113, 4303-4313, Fahey, J. et al. T. and Frechet JM
J. (1991) Proc. SPIE, 1466, 67, Frechet, JMJ, Stan
ciulescu, M., Lizawa, T., and Willson, CG, (1989) Pr
oc.ACS Div.Polym.Mater.Sci.Eng., 60,170. Grazian
o, KA, Thompson, SD, and Winkle, MR (1990) Proc.SP
IE, 1466, 75. As described in the above, a researcher in this field can easily synthesize a required base generator. In addition, cobalt (III) amine salt, cobalt (III)
Alkyl amine salts, α-ketocarboxylic acid ammonium salts, phenylglyoxy acid ammonium salts, 4-methylphenyl sulfonamide, N-cyclohexyl-4-methylphenyl sulfonamide and the like are also useful. All of these compounds decompose by irradiation with electromagnetic waves to generate a base. Among these, the base generator represented by the chemical formula 3 is
High generation efficiency and excellent characteristics are obtained. The group represented by R 7 in the structural formula is from the viewpoint of film slippage at the time of forming a relief pattern,
An organic group having 10 or less carbon atoms is desirable. Also,
The photobase generator used in the present invention can be used regardless of the above structure as long as it can generate a water-soluble aliphatic amine by irradiation with electromagnetic waves. In order to obtain water solubility by salt formation, amines having 12 or less carbon atoms are generally desirable. In the present invention, the electromagnetic wave has a wavelength of 10 μm to 1
It is desirable to use a light beam of nm, preferably 200 to 900 nm.

【0041】本発明は、上記常法によって合成されたポ
リアミド酸と塩基発生剤を混合することによって容易に
達成される。本発明において三重項増感剤との併用、各
種アミン化合物からなる密着向上剤,界面活性剤等との
併用が可能であることは言うまでもない。
The present invention can be easily achieved by mixing the polyamic acid synthesized by the above-mentioned conventional method and the base generator. It goes without saying that the present invention can be used in combination with a triplet sensitizer, an adhesion improver made of various amine compounds, a surfactant and the like.

【0042】光照射によって発生した塩基は、高分子中
のカルボン酸塩と反応し、高分子の溶解性を変化させ
る。すなわち塩基とカルボン酸が反応し塩を形成した部
分は水に対する溶解性が向上し、有機溶剤に対する溶解
性が低下する。これにより、極性の高い水溶剤を現像液
として用いた場合はポジ像が得られ、有機溶剤を現像液
として用いた場合はネガ像を得ることが可能になる。カ
ルボン酸基と発生した塩基の結合は弱いためイミド化過
程で容易に脱離し優れた膜質のレリーフパターンを与え
ることが可能となる。上記レリーフパターンは塩形成に
基づくため、樹脂組成物中のカルボン酸と塩基発生剤の
量が重要となる。これらの配合量について検討した結
果、カルボン酸が全樹脂成分に対して20重量%以上と
した場合に良好なレリーフパターンが得られることが分
かった。また塩基発生剤の量が、カルボン酸に対して
0.2から2.0モル当量の場合に良好なレリーフパター
ンが得られることが分かった。0.2モル当量以下およ
び2.0モル当量以上の場合には、いずれも良好なレリ
ーフパターンを得ることができなかった。
The base generated by the light irradiation reacts with the carboxylate in the polymer and changes the solubility of the polymer. That is, the portion where the base and the carboxylic acid react to form a salt has improved solubility in water and reduced solubility in an organic solvent. As a result, a positive image can be obtained when a highly polar water solvent is used as a developing solution, and a negative image can be obtained when an organic solvent is used as a developing solution. Since the bond between the carboxylic acid group and the generated base is weak, it can be easily eliminated during the imidization process to give a relief pattern of excellent film quality. Since the relief pattern is based on salt formation, the amounts of carboxylic acid and base generator in the resin composition are important. As a result of studying the blending amount of these, it was found that a good relief pattern was obtained when the carboxylic acid was 20% by weight or more based on all the resin components. It was also found that a good relief pattern was obtained when the amount of the base generator was 0.2 to 2.0 molar equivalents with respect to the carboxylic acid. In both cases of 0.2 molar equivalent or less and 2.0 molar equivalent or more, a good relief pattern could not be obtained.

【0043】[0043]

【作用】光照射によって発生した塩基は、高分子中のカ
ルボン酸基と反応し、高分子の水に対する溶解性を変化
させ、未露光部との間での現像を可能にする。カルボン
酸塩と生成した塩基あるいはカルボン酸基と塩基発生剤
の結合は弱いためで容易に脱離し優れた膜質のレリーフ
パターンを与える。
The base generated by light irradiation reacts with the carboxylic acid group in the polymer, changes the solubility of the polymer in water, and enables development between the unexposed portion and the exposed portion. Since the bond between the carboxylic acid salt and the generated base or the carboxylic acid group and the base generator is weak, it is easily desorbed to give a relief pattern of excellent film quality.

【0044】[0044]

【実施例】【Example】

(実施例1)3,3′,4,4′−ビフェニルテトラカ
ルボン酸二無水物(BPDA)と当量のp−フェニレン
ジアミン(PDA)をN−メチル−2−ピロリドン中で
反応させ、固形分含量10重量%のポリアミド酸溶液を
得た。このポリアミド酸溶液に、BPDAと当量の
[[(2,6−ジニトロベンジル)オキシ]カルボニ
ル]シクロヘキシルアミンを加え感光性樹脂組成物を得
た。この感光性樹脂組成物をスピンコート法によってガ
ラス基板上に塗布し、100℃で乾燥し、遮光性マスク
を介して高圧水銀灯で露光した。このフィルムを水中で
現像したところ、未露後部をほとんど侵食することなく
レリーフパターンを得ることができた。更に300℃で
1時間熱処理し、強靭なレリーフパターンを得ることが
できた。
(Example 1) 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride (BPDA) and an equivalent amount of p-phenylenediamine (PDA) were reacted in N-methyl-2-pyrrolidone to give a solid content. A polyamic acid solution having a content of 10% by weight was obtained. BPDA and an equivalent amount of [[(2,6-dinitrobenzyl) oxy] carbonyl] cyclohexylamine were added to this polyamic acid solution to obtain a photosensitive resin composition. This photosensitive resin composition was applied on a glass substrate by a spin coating method, dried at 100 ° C., and exposed with a high pressure mercury lamp through a light shielding mask. When this film was developed in water, a relief pattern could be obtained with almost no erosion of the unexposed rear part. Further, heat treatment was performed at 300 ° C. for 1 hour, and a strong relief pattern could be obtained.

【0045】(実施例2−5)[[(2,6−ジニトロ
ベンジル)オキシ]カルボニル]シクロヘキシルアミン
の量をBPDAの0.3,0.5,2.0,3.0当量と変
化させ実施例1と同様の検討を行った。その結果、実施
例1と同様未露後部をほとんど侵食することなくレリー
フパタンを得ることができた。
(Example 2-5) The amount of [[(2,6-dinitrobenzyl) oxy] carbonyl] cyclohexylamine was changed to 0.3, 0.5, 2.0 and 3.0 equivalents of BPDA. The same examination as in Example 1 was conducted. As a result, a relief pattern could be obtained with almost no erosion of the unexposed rear part as in Example 1.

【0046】(実施例6)[[(2,6−ジニトロベン
ジル)オキシ]カルボニル]シクロヘキシルアミンをN
−[[(2,6−ジニトロフェニル)−1−メチルメトキ
シ]カルボニル]シクロヘキシルアミンに変えて実施例
1と同様の検討を行った。その結果、実施例1と同様未
露後部をほとんど侵食することなくレリーフパターンを
得ることができた。
(Example 6) [[(2,6-dinitrobenzyl) oxy] carbonyl] cyclohexylamine was added to N
The same study as in Example 1 was carried out by substituting-[[(2,6-dinitrophenyl) -1-methylmethoxy] carbonyl] cyclohexylamine. As a result, a relief pattern could be obtained with almost no erosion of the unexposed rear part as in Example 1.

【0047】(実施例7)[[(2,6−ジニトロベン
ジル)オキシ]カルボニル]シクロヘキシルアミンをN
−[[(2,6−ジニトロフェニル)−1−(2′,
6′−ジニトロフェニル)メトキシ]カルボニル]シク
ロヘキシルアミンに変えて実施例1と同様の検討を行っ
た。その結果、実施例1と同様未露後部をほとんど侵食
することなくレリーフパターンを得ることができた。
Example 7 [[(2,6-dinitrobenzyl) oxy] carbonyl] cyclohexylamine was added to N
-[[(2,6-dinitrophenyl) -1- (2 ',
6′-Dinitrophenyl) methoxy] carbonyl] cyclohexylamine was replaced by the same examination as in Example 1. As a result, a relief pattern could be obtained with almost no erosion of the unexposed rear part as in Example 1.

【0048】(実施例8)[[(2,6−ジニトロベン
ジル)オキシ]カルボニル]シクロヘキシルアミンをN
−[[(2−ニトロフェニル)−1−(2′−ニトロフェ
ニル)メトキシ]カルボニル]シクロヘキシルアミンに
変えて実施例1と同様の検討を行った。その結果、実施
例1と同様未露後部をほとんど侵食することなくレリー
フパターンを得ることができた。
Example 8 [[(2,6-dinitrobenzyl) oxy] carbonyl] cyclohexylamine was added to N
The same examination as in Example 1 was carried out by changing to-[[(2-nitrophenyl) -1- (2'-nitrophenyl) methoxy] carbonyl] cyclohexylamine. As a result, a relief pattern could be obtained with almost no erosion of the unexposed rear part as in Example 1.

【0049】(実施例9)BPDAをベンゾフエノンテ
トラカルボン酸二無水物に変えて実施例1と同様の検討
を行った。その結果、実施例1と同様未露後部をほとん
ど侵食することなくレリーフパターンを得ることができ
た。
Example 9 The same examination as in Example 1 was conducted by replacing BPDA with benzophenonetetracarboxylic dianhydride. As a result, a relief pattern could be obtained with almost no erosion of the unexposed rear part as in Example 1.

【0050】(実施例10)BPDAをピロメリティッ
ク酸二無水物(PMDA)に変えて実施例1と同様の検
討を行った。その結果、実施例1と同様未露後部をほと
んど侵食することなくレリーフパターンを得ることがで
きた。
Example 10 The same examination as in Example 1 was carried out by changing BPDA to pyromellitic dianhydride (PMDA). As a result, a relief pattern could be obtained with almost no erosion of the unexposed rear part as in Example 1.

【0051】(実施例11)BPDAをピロメリティッ
ク酸二無水物(PMDA)に変え、PDAをオキシジア
ニリン(ODA)に変えて実施例1と同様の検討を行っ
た。その結果、実施例1と同様未露後部をほとんど侵食
することなくレリーフパターンを得ることができた。
Example 11 The same examination as in Example 1 was carried out by changing BPDA to pyromellitic dianhydride (PMDA) and changing PDA to oxydianiline (ODA). As a result, a relief pattern could be obtained with almost no erosion of the unexposed rear part as in Example 1.

【0052】(比較例1)[[(2,6−ジニトロベン
ジル)オキシ]カルボニル]シクロヘキシルアミンを加
えずに、実施例1と同様の検討を行った結果、露光部,
未露光部とも侵食されなかった。
Comparative Example 1 The same examination as in Example 1 was carried out without adding [[(2,6-dinitrobenzyl) oxy] carbonyl] cyclohexylamine.
Neither the unexposed area was eroded.

【0053】(実施例12)3,3′,4,4′−ビフ
ェニルテトラカルボン酸二無水物(BPDA)と当量の
p−フェニレンジアミン(PDA)をN−メチル−2−
ピロリドン中で反応させ、固形分含量10重量%のポリ
アミド酸溶液を得た。このポリアミド酸溶液に、BPD
Aと当量の[[(2,6−ジニトロベンジル)オキシ]
カルボニル]シクロヘキシルアミンを加え露光性樹脂組
成物を得た。この感光性樹脂組成物をスピンコート法に
よってガラス基板上に塗布し、100℃で乾燥し、遮光
性マスクを介して高圧水銀灯で露光した。このフィルム
をN−メチル−2−ピロリドンで現像したところ、露後
部をほとんど侵食することなくレリーフパターンを得る
ことができた。更に300℃で1時間熱処理し、強靭な
レリーフパターンを得ることができた。
(Example 12) 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride (BPDA) and an equivalent amount of p-phenylenediamine (PDA) were added to N-methyl-2-.
Reaction was carried out in pyrrolidone to obtain a polyamic acid solution having a solid content of 10% by weight. BPD was added to this polyamic acid solution.
[[(2,6-Dinitrobenzyl) oxy] equivalent to A
Carbonyl] cyclohexylamine was added to obtain a light-exposed resin composition. This photosensitive resin composition was applied on a glass substrate by a spin coating method, dried at 100 ° C., and exposed with a high pressure mercury lamp through a light shielding mask. When this film was developed with N-methyl-2-pyrrolidone, a relief pattern could be obtained with almost no erosion of the back dew part. Further, heat treatment was performed at 300 ° C. for 1 hour, and a strong relief pattern could be obtained.

【0054】(実施例13−16)[[(2,6−ジニ
トロベンジン)オキシ]カルボニル]シクロヘキシルア
ミンの量をBPDAの0.3,0.5,1.50,2.0当
量と変化させ実施例13と同様の検討を行った。その結
果、実施例12と同様露後部をほとんど侵食することな
くレリーフパターンを得ることができた。
Examples 13-16 The amount of [[(2,6-dinitrobenzidine) oxy] carbonyl] cyclohexylamine was changed to 0.3, 0.5, 1.50, 2.0 equivalents of BPDA. The same examination as in Example 13 was performed. As a result, it was possible to obtain a relief pattern with almost no erosion of the rear dew portion as in Example 12.

【0055】(実施例17)現像液をNMPに変えて実
施例1と同様の実験を行った結果、露光部をほとんど侵
食することなくレリーフパターンを得ることが出来た。
さらに、300℃で1時間熱処理し、厚さ5μm,線幅
5μmのレリーフパターンを得ることが出来た。
Example 17 The same experiment as in Example 1 was conducted by changing the developing solution to NMP. As a result, a relief pattern could be obtained with almost no erosion of the exposed portion.
Further, it was heat-treated at 300 ° C. for 1 hour to obtain a relief pattern having a thickness of 5 μm and a line width of 5 μm.

【0056】(実施例18)実施例11の感光性樹脂組
成物をLSIの配線形成が終了したシリコンウエハー上
に塗布露光し実施例1と同様にしてバファーコート膜を
形成した。現像工程で有機溶剤を用いないために、排気
設備,配溶剤処理の負担が大幅に軽減された。得られた
LSIチップをモールドした後はんだ耐熱試験を行った
結果、膨れの発生が見られず耐熱性の優れたLSIパッ
ケージを得られた。
(Example 18) The photosensitive resin composition of Example 11 was coated and exposed on a silicon wafer on which wiring of an LSI was completed, and a buffer coat film was formed in the same manner as in Example 1. Since no organic solvent is used in the development process, the burden of exhaust equipment and solvent processing is greatly reduced. As a result of performing a soldering heat resistance test after molding the obtained LSI chip, an LSI package excellent in heat resistance without generation of bulging was obtained.

【0057】(実施例19)現像液をNMPに変えて、
実施例18と同様にLSI上にバファーコート膜を形成
した。この際マスクは実施例18の場合を用いたものと
ネガポジ反転されたものを用いた。得られたLSIチッ
プをモールドした後はんだ耐熱試験を行った結果、膨れ
の発生が見られず耐熱性の優れたLSIパッケージを得
られた。
(Example 19) The developing solution was changed to NMP,
A buffer coat film was formed on the LSI in the same manner as in Example 18. At this time, the mask used was the one used in Example 18 and the one used in the negative-positive reversal. As a result of performing a soldering heat resistance test after molding the obtained LSI chip, an LSI package excellent in heat resistance without generation of bulging was obtained.

【0058】(比較例2)実施例11のポリアミド酸溶
液(塩基発生剤を含まない)を用いてバファーコート膜
を形成した、パターンを形成のためのレジストは東京応
化成社製OFPR8000をもちいた。得られたLSI
チップをモールドした後はんだ耐熱試験を行った結果、
膨れの発生が得られた。
(Comparative Example 2) A buffer coat film was formed using the polyamic acid solution (containing no base generator) of Example 11, and a resist for pattern formation was OFPR8000 manufactured by Tokyo Ohkasei Co., Ltd. . Obtained LSI
As a result of soldering heat resistance test after molding the chip,
The occurrence of blisters was obtained.

【0059】(比較例3)日立化成社製を用いてバファ
ーコート膜を形成した、現像液としてはNMPと水の混
合溶媒を用いた。
Comparative Example 3 A buffer coat film was formed using Hitachi Chemical Co., Ltd. A mixed solvent of NMP and water was used as a developing solution.

【0060】[0060]

【発明の効果】本発明は、容易にしかも広範囲の水系溶
剤で現像可能なポジ型感光性樹脂組成物を与え、その工
業的価値は大きい。
INDUSTRIAL APPLICABILITY The present invention provides a positive type photosensitive resin composition which can be easily developed with a wide range of aqueous solvents and has great industrial value.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 石田 美奈 茨城県日立市大みか町七丁目1番1号 株 式会社日立製作所日立研究所内 (72)発明者 高橋 昭雄 茨城県日立市大みか町七丁目1番1号 株 式会社日立製作所日立研究所内 (72)発明者 沼田 俊一 茨城県日立市大みか町七丁目1番1号 株 式会社日立製作所日立研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Mina Ishida Inventor Mina Ishida 7-1-1 Omika-cho, Hitachi City, Ibaraki Hitachi Ltd. Hitachi Research Laboratory (72) Inventor Akio Takahashi 7-chome Omika-cho, Hitachi City, Ibaraki Prefecture No. 1 Hitachi Ltd. Hitachi Research Laboratory (72) Inventor Shunichi Numata 7-1 Omika-cho, Hitachi City, Ibaraki Prefecture Hitachi Ltd. Hitachi Research Laboratory

Claims (14)

【特許請求の範囲】[Claims] 【請求項1】一般式(I) 【化1】 (式中、Aは炭素数2以上の有機基、nは10〜200,000
の整数、R1 は炭素数1以上の有機基,水素,ハロゲン
原子のいずれかである。)で表わされる重合体の全重量
に対してカルボキシル基の割合が20重量%以上であ
り、数平均分子量が10,000〜1,000,000 のカルボン酸重
合体(イ)と、電磁波の照射により塩基を発生する光塩
基発生剤(ロ)を前記カルボキシル基に対して0.2〜
2.0モル当量含むことを特徴とする感光性樹脂組成
物。
1. A compound represented by the general formula (I): (In the formula, A is an organic group having 2 or more carbon atoms, and n is 10 to 200,000.
And R 1 is an organic group having 1 or more carbon atoms, hydrogen, or a halogen atom. ) The carboxylic acid polymer (a) having a carboxyl group ratio of 20% by weight or more and a number average molecular weight of 10,000 to 1,000,000 with respect to the total weight of the polymer represented by The base generator (b) is used in an amount of 0.2 to the above carboxyl group.
A photosensitive resin composition comprising 2.0 molar equivalents.
【請求項2】前記一般式(I)が、一般式(II) 【化2】 (式中、R1 は前記と同じである。R2 は炭素数2以上
の有機基、R3 は炭素数4以上の有機基である。nは前
記と同じである。)であることを特徴とする請求項1に
記載の感光性樹脂組成物。
2. The general formula (I) is represented by the general formula (II): (In the formula, R 1 is the same as above. R 2 is an organic group having 2 or more carbon atoms, R 3 is an organic group having 4 or more carbon atoms, and n is the same as above.) The photosensitive resin composition according to claim 1, which is characterized in that.
【請求項3】前記塩基発生剤(ロ)が、一般式(III) 【化3】 (式中、R4 は炭素数1以上の有機基,水素,ハロゲン
原子のいずれかである。pは0〜4の整数である。ま
た、R5,R6は炭素数12以下の有機基、R7 は水素又
は炭素数10以下の有機基である。)で表わされること
を特徴とする請求項1に記載の感光性樹脂組成物。
3. The base generator (b) has the general formula (III): (In the formula, R 4 is any one of an organic group having 1 or more carbon atoms, hydrogen, and a halogen atom. P is an integer of 0 to 4. R 5 and R 6 are organic groups having 12 or less carbon atoms. , R 7 is hydrogen or an organic group having 10 or less carbon atoms.), The photosensitive resin composition according to claim 1.
【請求項4】カルボキシル基を含む重合体と、一般式
(III) 【化4】 (式中、R4 は炭素数1以上の有機基,水素,ハロゲン
原子のいずれかである。pは0〜4の整数である。ま
た、R5,R6は炭素数12以下の有機基、R7 は水素又
は炭素数10以下の有機基である。)で表わされる化合
物を含み、水に溶解性のポジ型感光性樹脂組成物。
4. A polymer containing a carboxyl group and a compound represented by the general formula (III): (In the formula, R 4 is any one of an organic group having 1 or more carbon atoms, hydrogen, and a halogen atom. P is an integer of 0 to 4. R 5 and R 6 are organic groups having 12 or less carbon atoms. , R 7 is hydrogen or an organic group having 10 or less carbon atoms), and is a water-soluble positive-type photosensitive resin composition.
【請求項5】一般式(I) 【化5】 (式中、Aは炭素数2以上の有機基、nは10〜200,000
の整数、R1 は炭素数1以上の有機基,水素,ハロゲン
原子のいずれかである。)で表わされる重合体の全重量
に対してカルボキシル基の割合が20重量%以上であ
り、数平均分子量が10,000〜1,000,000 のカルボン酸重
合体(イ)と、電磁波の照射により塩基を発生する光塩
基発生剤(ロ)を前記カルボキシル基に対して0.2〜
2.0モル当量含む感光性樹脂組成物を基板上に塗布
し、乾燥する工程,遮光性マスクを介して光露光する工
程,水溶剤中で現像する工程を含むことを特徴とするパ
ターン形成方法。
5. A compound represented by the general formula (I): (In the formula, A is an organic group having 2 or more carbon atoms, and n is 10 to 200,000.
And R 1 is an organic group having 1 or more carbon atoms, hydrogen, or a halogen atom. ) The carboxylic acid polymer (a) having a carboxyl group ratio of 20% by weight or more and a number average molecular weight of 10,000 to 1,000,000 with respect to the total weight of the polymer represented by The base generator (b) is used in an amount of 0.2 to the above carboxyl group.
A method for forming a pattern, which comprises a step of applying a photosensitive resin composition containing 2.0 molar equivalents on a substrate and drying, a step of exposing to light through a light-shielding mask, and a step of developing in a water solvent. .
【請求項6】カルボキシル基を含む化合物と塩基発生剤
を含み、電磁波照射によってパターン形成可能なことを
特徴とする組成物。
6. A composition comprising a compound having a carboxyl group and a base generator and capable of forming a pattern by electromagnetic wave irradiation.
【請求項7】塩基性発生剤が、一般式(III) 【化6】 (式中、R4 は炭素数1以上の有機基,水素,ハロゲン
原子のいずれかである。pは0〜4の整数である。ま
た、R5,R6は炭素数12以下の有機基、R7 は水素又
は炭素数10以下の有機基である。)で表わされる化合
物であることを特徴とする請求項6に記載の組成物。
7. The basic generator is represented by the general formula (III): (In the formula, R 4 is any one of an organic group having 1 or more carbon atoms, hydrogen, and a halogen atom. P is an integer of 0 to 4. R 5 and R 6 are organic groups having 12 or less carbon atoms. , R 7 is hydrogen or an organic group having 10 or less carbon atoms.), The composition according to claim 6.
【請求項8】塩基発生剤が、コバルト(III)アミン
塩,コバルト(III)アルキルアミン塩,α−ケトカル
ボン酸アンモニウム塩,フェニルグリオキシ酸アンモニ
ウム塩,4−メチルフェニルスルホンアマイド,N−シ
クロヘキシル−4−メチルフェニルスルホンアマイドの
中の少なくとも1種を用いてなることを特徴とする請求
項6に記載の組成物。
8. A base generator is a cobalt (III) amine salt, a cobalt (III) alkylamine salt, an α-ketocarboxylic acid ammonium salt, a phenylglyoxy acid ammonium salt, 4-methylphenylsulfone amide, N-cyclohexyl-. The composition according to claim 6, wherein at least one of 4-methylphenylsulfone amide is used.
【請求項9】電磁波の波長が200〜900mmであるこ
とを特徴とする請求項1〜6に記載の組成物。
9. The composition according to claim 1, wherein the wavelength of the electromagnetic wave is 200 to 900 mm.
【請求項10】一般式(I) 【化7】 (式中、Aは炭素数2以上の有機基、nは10〜200,000
の整数、R1 は炭素数1以上の有機基,水素,ハロゲン
原子のいずれかである。)で表わされるカルボン酸重合
体を含む樹脂成分の全重量に対してカルボキシル基の割
合が20重量%以上であり、数平均分子量が10,000〜1,
000,000 のカルボン酸重合体(イ)と、電磁波の照射に
より塩基を発生する光塩基発生剤(ロ)を前記カルボキ
シル基に対して0.2〜2.0モル当量含むことを特徴と
する感光性樹脂組成物。
10. A compound represented by the general formula (I): (In the formula, A is an organic group having 2 or more carbon atoms, and n is 10 to 200,000.
And R 1 is an organic group having 1 or more carbon atoms, hydrogen, or a halogen atom. ) The proportion of carboxyl groups is 20% by weight or more based on the total weight of the resin component containing the carboxylic acid polymer, and the number average molecular weight is 10,000 to 1,
Photosensitivity, which comprises 0.2 million to 2.0 molar equivalents of a carboxylic acid polymer (a) and a photobase generator (b) that generates a base upon irradiation of electromagnetic waves with respect to the carboxyl group. Resin composition.
【請求項11】一般式(I) 【化8】 (式中、Aは炭素数2以上の有機基、nは10〜200,000
の整数、R1 は炭素数1以上の有機基,水素,ハロゲン
原子のいずれかである。)で表わされるカルボン酸重合
体を含む樹脂成分の全重量に対してカルボキシル基の割
合が20重量%以上であり、数平均分子量が10,000〜1,
000,000 のカルボン酸重合体(イ)と、電磁波の照射に
より塩基を発生する光塩基発生剤(ロ)を前記カルボキ
シル基に対して0.2〜2.0モル当量含む感光性樹脂組
成物を基板上に塗布し、乾燥する工程,遮光性マスクを
介して光露光する工程,水中で現像する工程を含むこと
を特徴とするパターン形成方法。
11. A compound represented by the general formula (I): (In the formula, A is an organic group having 2 or more carbon atoms, and n is 10 to 200,000.
And R 1 is an organic group having 1 or more carbon atoms, hydrogen, or a halogen atom. ) The proportion of carboxyl groups is 20% by weight or more based on the total weight of the resin component containing the carboxylic acid polymer, and the number average molecular weight is 10,000 to 1,
A photosensitive resin composition containing 0.2 million to 2.0 molar equivalents of a carboxylic acid polymer (a) and a photobase generator (b) that generates a base upon irradiation of electromagnetic waves with respect to the carboxyl group is used as a substrate. A pattern forming method, which comprises a step of coating and drying on the surface, a step of exposing to light through a light-shielding mask, and a step of developing in water.
【請求項12】(a)基板上に第1の配線を形成した配
線シートを形成する工程、(b)前記基板と配線間およ
び配線上に接着層を形成する工程、(c)前記接着層を
介して第2の配線を形成した配線シートを積層する工
程、(d)前記積層した配線シートを加圧,加熱して接
着層を硬化し、前記第1の配線と第2の配線を接続する
工程、を含む多層配線回路板の製法において、前記第1
の配線及び第2の配線の形成工程が、一般式(I) 【化9】 (式中、Aは炭素数2以上の有機基、nは10〜200,000
の整数、R1 は炭素数1以上の有機基,水素,ハロゲン
原子のいずれかである。)で表わされるカルボン酸重合
体を含む樹脂成分の全重量に対してカルボキシル基の割
合が20重量%以上であり、数平均分子量が10,000〜1,
000,000 のカルボン酸重合体(イ)と、電磁波の照射に
より塩基を発生する光塩基発生剤(ロ)を前記カルボキ
シル基に対して0.2〜2.0モル当量含む感光性樹脂組
成物を基板上に塗布し、乾燥する工程,遮光性マスクを
介して光露光する工程,水溶剤中で現像する工程を含む
ことを特徴とする多層配線回路板の製法。
12. (a) forming a wiring sheet having first wiring formed on a substrate, (b) forming an adhesive layer between the substrate and the wiring and on the wiring, (c) the adhesive layer A step of stacking wiring sheets on which second wirings have been formed via (d) pressing and heating the stacked wiring sheets to cure the adhesive layer and connect the first wirings and the second wirings. A method of manufacturing a multilayer printed circuit board, the method including:
The step of forming the wiring and the second wiring is performed according to the general formula (I): (In the formula, A is an organic group having 2 or more carbon atoms, and n is 10 to 200,000.
And R 1 is an organic group having 1 or more carbon atoms, hydrogen, or a halogen atom. ) The proportion of carboxyl groups is 20% by weight or more based on the total weight of the resin component containing the carboxylic acid polymer, and the number average molecular weight is 10,000 to 1,
A photosensitive resin composition containing 0.2 million to 2.0 molar equivalents of a carboxylic acid polymer (a) and a photobase generator (b) that generates a base upon irradiation of electromagnetic waves with respect to the carboxyl group is used as a substrate. A method for producing a multilayer printed circuit board, which comprises the steps of applying the coating on the substrate and drying it, exposing it through a light-shielding mask, and developing it in a water solvent.
【請求項13】大規模集積回路における回路形成手段
が、一般式(I) 【化10】 (式中、Aは炭素数2以上の有機基、nは10〜200,000
の整数、R1 は炭素数1以上の有機基,水素,ハロゲン
原子のいずれかである。)で表わされるカルボン酸重合
体を含む樹脂成分の全重量に対してカルボキシル基の割
合が20重量%以上であり、数平均分子量が10,000〜1,
000,000 のカルボン酸重合体(イ)と、電磁波の照射に
より塩基を発生する光塩基発生剤(ロ)を前記カルボキ
シル基に対して0.2〜2.0モル当量含む感光性樹脂組
成物を基板上に塗布し、乾燥する工程,遮光性マスクを
介して光露光する工程,水中で現像する工程を含むこと
を特徴とする大規模集積回路。
13. A circuit forming means in a large scale integrated circuit is represented by the general formula (I): (In the formula, A is an organic group having 2 or more carbon atoms, and n is 10 to 200,000.
And R 1 is an organic group having 1 or more carbon atoms, hydrogen, or a halogen atom. ) The proportion of carboxyl groups is 20% by weight or more based on the total weight of the resin component containing the carboxylic acid polymer, and the number average molecular weight is 10,000 to 1,
A photosensitive resin composition containing 0.2 million to 2.0 molar equivalents of a carboxylic acid polymer (a) and a photobase generator (b) that generates a base upon irradiation of electromagnetic waves with respect to the carboxyl group is used as a substrate. A large-scale integrated circuit characterized by including the steps of coating and drying on, light exposing through a light-shielding mask, and developing in water.
【請求項14】請求項6に記載の組成物を用いることを
特徴とする液晶配向膜パターンの形成方法。
14. A method for forming a liquid crystal alignment film pattern, which comprises using the composition according to claim 6.
JP5154805A 1993-06-25 1993-06-25 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SAME Pending JPH07140663A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5154805A JPH07140663A (en) 1993-06-25 1993-06-25 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SAME
KR1019940014734A KR950001419A (en) 1993-06-25 1994-06-25 Photosensitive resin composition and pattern formation method using this composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5154805A JPH07140663A (en) 1993-06-25 1993-06-25 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SAME

Publications (1)

Publication Number Publication Date
JPH07140663A true JPH07140663A (en) 1995-06-02

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Country Status (2)

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JP (1) JPH07140663A (en)
KR (1) KR950001419A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6017683A (en) * 1997-02-20 2000-01-25 Matsushita Electric Industrial Co., Ltd. Pattern forming material and pattern forming method
JP2007098844A (en) * 2005-10-06 2007-04-19 Canon Inc Inkjet head manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050040275A (en) * 2003-10-28 2005-05-03 삼성전자주식회사 Composition for forming dielectric film and method for forming dielectric film or pattern using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6017683A (en) * 1997-02-20 2000-01-25 Matsushita Electric Industrial Co., Ltd. Pattern forming material and pattern forming method
US6261736B1 (en) 1997-02-20 2001-07-17 Matsushita Electric Industrial Co., Ltd. Pattern forming material and pattern forming method
JP2007098844A (en) * 2005-10-06 2007-04-19 Canon Inc Inkjet head manufacturing method

Also Published As

Publication number Publication date
KR950001419A (en) 1995-01-03

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