JPH07147267A - Fine wiring formation device - Google Patents
Fine wiring formation deviceInfo
- Publication number
- JPH07147267A JPH07147267A JP29231993A JP29231993A JPH07147267A JP H07147267 A JPH07147267 A JP H07147267A JP 29231993 A JP29231993 A JP 29231993A JP 29231993 A JP29231993 A JP 29231993A JP H07147267 A JPH07147267 A JP H07147267A
- Authority
- JP
- Japan
- Prior art keywords
- window
- light
- temperature
- semiconductor substrate
- fine wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000000460 chlorine Substances 0.000 claims description 7
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 31
- 239000010453 quartz Substances 0.000 abstract description 27
- 238000005530 etching Methods 0.000 abstract description 20
- 230000008021 deposition Effects 0.000 abstract description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract description 2
- 238000011109 contamination Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- -1 copper halide Chemical class 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001804 chlorine Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＬＳＩにおける微細配
線形成装置に関し、特に低温でかつＬＳＩ作製に充分な
異方性エッチングを実現し銅の微細配線を形成する微細
配線形成装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fine wiring forming apparatus for an LSI, and more particularly to a fine wiring forming apparatus which realizes anisotropic etching sufficient for LSI fabrication at a low temperature and forms fine copper wiring.
【０００２】[0002]
【従来の技術】従来、ＬＳＩの配線材料として一般にＡ
ｌが用いらている。しかし、配線が微細になるに従い、
Ａｌではストレスマイグレーションおよびエレクトロマ
イグレーション耐性が悪く問題となっている。さらに、
半導体装置の高速化に伴い配線遅延の問題が大きくな
り、より抵抗の低い材料を配線として使用することが強
く要求されている。2. Description of the Related Art Conventionally, A is generally used as a wiring material for LSI.
1 is used. However, as the wiring becomes finer,
With Al, stress migration and electromigration resistance are poor and pose a problem. further,
As the speed of semiconductor devices increases, the problem of wiring delay increases, and there is a strong demand for using materials having lower resistance as wiring.
【０００３】このような要求に対して銅を配線材料とし
て用いることが検討されている。しかしながら、周知の
ようにＡｌなど微細加工しているドライエッチング法で
は、銅のハロゲン化物が基板表面から離脱しないためエ
ッチングが進行しない欠点がある。これは、銅ハロゲン
化物の平衡蒸気圧がＡｌ等のそれと比較し著しく低いこ
とと、イオンアシストの効果があまり無いことに起因す
る。その結果、室温程度でＣｌ2 プラズマガスに晒す
と、銅表面にＣｕＣｌ2 等が形成されるだけでエッチン
グは進行しない。In response to such requirements, the use of copper as a wiring material has been studied. However, as is well known, the dry etching method in which Al or the like is finely processed has a drawback that the etching does not proceed because the copper halide does not separate from the substrate surface. This is because the equilibrium vapor pressure of copper halide is significantly lower than that of Al and the like, and the effect of ion assist is not so great. As a result, when exposed to Cl 2 plasma gas at room temperature, CuCl 2 or the like is only formed on the copper surface and etching does not proceed.
【０００４】一方、エッチング進行を促すために、基板
温度を例えば２５０°Ｃと高めることが考えられるが、
この方法であると、基板温度が高いため、エッチング中
に銅配線中に容易に塩素が残留する。その結果、空気中
の水分等と反応しコロージョンと呼ばれる配線腐食をも
たらし信頼性を低下させる。On the other hand, in order to promote the progress of etching, it is possible to raise the substrate temperature to, for example, 250 ° C.
According to this method, since the substrate temperature is high, chlorine easily remains in the copper wiring during etching. As a result, it reacts with moisture in the air and causes corrosion of wiring called corrosion, which lowers reliability.
【０００５】この対策として従来、この塩素系ガスを用
いるドライエッチングにおいては、基板表面に赤外線ラ
ンプで赤外光を照射し、銅表面に形成された塩化銅に赤
外光を吸収させ、塩化銅を銅表面から離脱させ、コロー
ジョンの問題を回避するとともに低温でエッチングを促
進させていた。As a measure against this, conventionally, in dry etching using this chlorine-based gas, the substrate surface is irradiated with infrared light by an infrared lamp, and the copper chloride formed on the copper surface is made to absorb the infrared light to form copper chloride. Was removed from the copper surface to avoid the problem of corrosion and promote etching at low temperature.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上述し
た赤外光を基板表面に照射させる装置では、繰返してエ
ッチングするにつれて、エッチング生成物である塩化銅
が赤外光導入窓に堆積し、導入窓を透過する赤外光強度
が低下する。このため、次第にエッチング条件が変化し
エッチングの再現性を劣化させる問題がある。従って、
再現性良く銅の加工を行なうためには、頻繁に導入窓の
クリーニングを必要とし、このため装置の稼働率をも低
下させるという問題がある。However, in the above-mentioned apparatus for irradiating the substrate surface with infrared light, as the etching is repeated, copper chloride, which is an etching product, is deposited on the infrared light introduction window, and the introduction window is introduced. The intensity of infrared light that passes through is reduced. Therefore, there is a problem that the etching conditions are gradually changed and the reproducibility of etching is deteriorated. Therefore,
In order to process copper with good reproducibility, it is necessary to frequently clean the introduction window, which causes a problem that the operating rate of the apparatus is also reduced.
【０００７】従って、本発明の目的は、導入窓にエッチ
ング生成物の堆積を抑制し稼働率を低下させることなく
再現性良く基板表面の銅の加工を行なうことのできる微
細配線形成装置を提供することである。Therefore, an object of the present invention is to provide a fine wiring forming apparatus capable of suppressing the accumulation of etching products on the introduction window and reproducibly processing copper on the substrate surface without lowering the operating rate. That is.
【０００８】[0008]
【課題を解決するための手段】本発明の特徴は、銅膜が
施された半導体基板を収納するチャンバーと、このチャ
ンバ一に塩素系ガスを導入しプラズマの物理化学的反応
を起させる手段と、該半導体基板に光導入窓を介して光
を照射する赤外線ランプと、該光導入窓を加熱する加熱
手段とを備え、該光導入窓の温度を所定の温度範囲に制
御する微細配線形成装置である。The present invention is characterized by a chamber for accommodating a semiconductor substrate coated with a copper film, and means for introducing a chlorine-based gas into the chamber to cause a physicochemical reaction of plasma. A fine wiring forming apparatus that includes an infrared lamp that irradiates the semiconductor substrate with light through a light introducing window and a heating unit that heats the light introducing window, and controls the temperature of the light introducing window within a predetermined temperature range. Is.
【０００９】[0009]
【実施例】次に、本発明について図面を参照して説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.
【００１０】図１は本発明の一実施例を示す微細配線形
成装置の模式図である。この微細配線形成装置は、図１
に示すように、銅膜が施された半導体基板１２を収納す
るチャンバー１１と、このチャンバ一１１のガス導入口
１６から導入される塩素系ガスの流量および供給・停止
を行なうガスフローメータ１７およびバルブ１８と、半
導体基板１２を保持する電極１４と協働しプラズマを発
生させる電極１３と、半導体基板１２に石英窓２２を介
して照射する赤外線ランプ１５と、石英窓２２を加熱す
るヒータ２４と、石英窓２２の温度を検出する熱電対２
３とを備えている。また、この装置には電極１３，１４
に高周波電力を印加する高周波電源２１と、導入される
エッチングガスである塩素系ガスの圧力を一定に維持す
る圧力調整用バルブ１９および真空ポンプ２０が設けら
れている。FIG. 1 is a schematic view of a fine wiring forming apparatus showing an embodiment of the present invention. This fine wiring forming apparatus is shown in FIG.
As shown in FIG. 3, a chamber 11 for accommodating a semiconductor substrate 12 having a copper film, a gas flow meter 17 for supplying and stopping a flow rate and supply / stop of a chlorine-based gas introduced from a gas inlet 16 of the chamber 11; A bulb 18, an electrode 13 that cooperates with an electrode 14 that holds the semiconductor substrate 12 to generate plasma, an infrared lamp 15 that irradiates the semiconductor substrate 12 through a quartz window 22, and a heater 24 that heats the quartz window 22. , A thermocouple 2 for detecting the temperature of the quartz window 22
3 and 3. Also, this device has electrodes 13, 14
A high-frequency power source 21 for applying high-frequency power, a pressure adjusting valve 19 and a vacuum pump 20 for maintaining the pressure of chlorine gas, which is the introduced etching gas, constant are provided.
【００１１】図２は図１の微細配線形成装置の動作を説
明するための半導体基板の構造を示す断面図である。次
に、この微細配線形成装置の動作を図２の半導体基板を
加工する例を挙げて説明する。この供試材である半導体
基板は、図２に示すように、シリコン基板２５にシリコ
ン酸化膜２６およびＴｉＮ膜２７を施し、その上にスパ
ッタリング法による銅２８の膜を５００ｎｍ厚程度に形
成してた。そして、この銅２８の膜の上に赤外光反射膜
かつ酸化銅と銅の反応を抑制するバリア膜としてＴｉＮ
膜２９を形成した。さらに、その上にシリコン酸化膜を
形成し選択的にエッチング除去してシリコン酸化膜３０
で形成されるハードマスクを作製した。FIG. 2 is a sectional view showing the structure of a semiconductor substrate for explaining the operation of the fine wiring forming apparatus of FIG. Next, the operation of the fine wiring forming apparatus will be described with reference to an example of processing the semiconductor substrate shown in FIG. As shown in FIG. 2, the semiconductor substrate, which is the sample material, is obtained by forming a silicon oxide film 26 and a TiN film 27 on a silicon substrate 25, and forming a copper 28 film by sputtering to a thickness of about 500 nm thereon. It was Then, on the copper 28 film, TiN is formed as an infrared light reflecting film and a barrier film for suppressing the reaction between copper oxide and copper.
The film 29 was formed. Further, a silicon oxide film is formed thereon and selectively removed by etching to remove the silicon oxide film 30.
A hard mask formed by 1. was produced.
【００１２】このように準備された半導体基板を図１の
チャンバー１１に収納し、真空ポンプ２０によりチャン
バー１１を排気し所定の真空度にする。次に、ガス導入
口１６より、例えば、Ｃｌ2 を導入し圧力を３Ｐａに維
持する。次に、ヒータ２４に電流を供給し石英窓２２を
加熱する。そして熱電対２３による石英窓２２の温度が
１５０°Ｃに達したら、赤外線ランプを点灯し半導体基
板１２を加熱する。そして電極１３，１４に高周波電力
を印加させプラズマを発生しエッチングを開始する。The semiconductor substrate thus prepared is housed in the chamber 11 shown in FIG. 1, and the chamber 11 is evacuated by the vacuum pump 20 to a predetermined degree of vacuum. Next, for example, Cl 2 is introduced from the gas inlet 16 to maintain the pressure at 3 Pa. Next, an electric current is supplied to the heater 24 to heat the quartz window 22. Then, when the temperature of the quartz window 22 by the thermocouple 23 reaches 150 ° C., the infrared lamp is turned on to heat the semiconductor substrate 12. Then, high-frequency power is applied to the electrodes 13 and 14 to generate plasma and start etching.
【００１３】ここで、エッチングの進行中における石英
窓２２の温度は、望ましくは常に１５０°Ｃに維持する
ことである。しかし、石英窓２２が熱絶縁材であるパッ
キング介してチャンバー１１に取付けられているので、
極めて短時間に１５０°Ｃに達し、しばしば２００°Ｃ
を超えることがある。この場合はチャンバー１１の内壁
に付着する分質が分離し半導体基板１２を汚染したり、
あるいは石英窓のや気密封止部材からガスを放出させた
りする恐れがあるので、直ちにヒータ２４への電流供給
を停止し、赤外線ランプ１５の光による加熱だけにす
る。すなわち、石英窓２２の温度は１５０°Ｃから２０
０°Ｃ程度に留める必要がある。また、このような温度
制御は公知技術で極めて容易に実現できる。Here, the temperature of the quartz window 22 during the etching process is preferably maintained at 150 ° C. at all times. However, since the quartz window 22 is attached to the chamber 11 via packing which is a heat insulating material,
Reach 150 ° C in a very short time, often 200 ° C
May exceed. In this case, the substance attached to the inner wall of the chamber 11 is separated to contaminate the semiconductor substrate 12,
Alternatively, since gas may be released from the quartz window or the airtight sealing member, the current supply to the heater 24 is immediately stopped and only the heating by the light of the infrared lamp 15 is performed. That is, the temperature of the quartz window 22 is from 150 ° C to 20 ° C.
It is necessary to keep it at about 0 ° C. Further, such temperature control can be realized very easily by a known technique.
【００１４】このように温度を所定範囲内に石英窓２２
を維持しながらエッチングすると、５００ｎｍ厚の銅２
８の膜がハードマスクにより選択的にエッチングされ、
２分程度で銅の配線が形成された。ちなみに、同じ供試
材で１０００枚処理してみたところ、石英窓２２は曇る
ことなく赤外光光強度は銅を微細加工するのに十分であ
った。In this way, the temperature of the quartz window 22 is controlled within a predetermined range.
Etching while maintaining the
The film of 8 is selectively etched by the hard mask,
Copper wiring was formed in about 2 minutes. By the way, when 1000 sheets were treated with the same test material, the quartz window 22 was not fogged and the infrared light intensity was sufficient for finely processing copper.
【００１５】図３は本発明の微細配線形成装置の他の実
施例を説明するための石英窓を示す断面図である。この
微細配線形成装置は、石英窓を加熱する手段を石英窓自
身にもたせたことである。すなわち、図３に示すよう
に、石英窓３１の表面に、例えば、２０ｎｍ厚のシリコ
ン窒化膜３２を被着させたことである。それ以外は前述
の実施例と同じである。 このシリコン窒化膜３２は、
赤外線ランプからの光の可視光領域の光を吸収し石英窓
３１を加熱する。そして、長波長領域の赤外光のみを透
過し半導体基板に照射する。FIG. 3 is a sectional view showing a quartz window for explaining another embodiment of the fine wiring forming apparatus of the present invention. In this fine wiring forming apparatus, the quartz window itself is provided with a means for heating the quartz window. That is, as shown in FIG. 3, for example, a silicon nitride film 32 having a thickness of 20 nm is deposited on the surface of the quartz window 31. Other than that is the same as the above-mentioned embodiment. This silicon nitride film 32 is
The quartz window 31 is heated by absorbing light from the infrared lamp in the visible light region. Then, only the infrared light in the long wavelength region is transmitted and the semiconductor substrate is irradiated with the infrared light.
【００１６】この実施例の加熱手段は、前述の実施例の
ヒータによる加熱手段と比べ石英窓３１を均一に加熱で
きることおよびヒータなど石英窓を遮光するものがない
という利点がある。また、この加熱手段は、赤外線ラン
プからの可視光のみ吸収し熱に変換していることから、
上述したように２００°Ｃというような過度に石英窓を
過度に加熱することはない。このため、前述の実施例の
ように温度を検出し温度を制御する必要はない。The heating means of this embodiment is advantageous in that the quartz window 31 can be heated uniformly and there is no heater such as a heater for shielding the quartz window, as compared with the heating means by the heater of the above-mentioned embodiment. In addition, since this heating means absorbs only visible light from the infrared lamp and converts it into heat,
As described above, the quartz window is not overheated, such as 200 ° C. Therefore, it is not necessary to detect the temperature and control the temperature as in the above-described embodiment.
【００１７】従って、この吸収膜の厚さおよび材質を設
計する際は、赤外線ランプからの波長毎の分光強度を測
定し、最も狭い波長から単位波長増毎の光強度を積算
し、石英窓を所定の温度まで上げる必要の積算光強度を
求め、どの波長までの光を吸収するか吸収するかを決め
れば良い。本実施例では石英窓３１の大きさおよび赤外
線ランプの分光強度から試算してみたところ、２０ｎｍ
のシリコン窒化膜３２を施すことで、青色から赤色まで
含む可視領域の光を吸収させ石英窓３１の飽和温度を１
５０°Ｃ程度に加熱することが出来た。その結果、前述
の実施例と同様に１０００枚の半導体基盤を処理しても
石英窓３１をクリーニングすることなく再現性のある加
工が出来た。Therefore, when designing the thickness and material of this absorption film, the spectral intensity of each wavelength from the infrared lamp is measured, and the light intensity of each unit wavelength is added up from the narrowest wavelength to integrate the quartz window. It suffices to obtain the integrated light intensity required to raise the temperature to a predetermined temperature and determine up to which wavelength the light is absorbed or absorbed. In this example, the size of the quartz window 31 and the spectral intensity of the infrared lamp were calculated as a trial calculation.
By applying the silicon nitride film 32 of, the light in the visible region including blue to red is absorbed and the saturation temperature of the quartz window 31 is set to 1
It was possible to heat to about 50 ° C. As a result, reproducible processing could be performed without cleaning the quartz window 31 even if 1000 semiconductor substrates were processed as in the above-described embodiment.
【００１８】[0018]
【発明の効果】以上説明したように本発明は、半導体基
板に照射する赤外線ランプの光を透過する光導入窓の温
度を所望の温度範囲に加熱する加熱手段を設け、エッチ
ング生成物の該光導入窓への堆積を抑制し光導入窓の透
過度を高く維持することによって、再現性良く基板表面
の銅の加工を行なうことのできるという効果がある。ま
た、エッチング生成物の付着がなくなることから、長時
間光導入窓をクリーニングする必要がなくなり装置の稼
働率も向上できるという効果もある。As described above, according to the present invention, the heating means for heating the temperature of the light introduction window for transmitting the light of the infrared lamp for irradiating the semiconductor substrate to a desired temperature range is provided, and the light of the etching product is provided. By suppressing the deposition on the introduction window and maintaining the transmittance of the light introduction window high, there is an effect that the copper on the substrate surface can be processed with good reproducibility. Moreover, since the adhesion of etching products is eliminated, it is not necessary to clean the light introducing window for a long time, and the operation rate of the device can be improved.
【図１】本発明の一実施例を示す微細配線形成装置の模
式図である。FIG. 1 is a schematic view of a fine wiring forming apparatus showing an embodiment of the present invention.
【図２】図１の微細配線形成装置の動作を説明するため
の半導体基板の構造を示す断面図である。FIG. 2 is a cross-sectional view showing the structure of a semiconductor substrate for explaining the operation of the fine wiring forming apparatus of FIG.
【図３】本発明の微細配線形成装置の他の実施例を説明
するための石英窓を示す断面図である。FIG. 3 is a sectional view showing a quartz window for explaining another embodiment of the fine wiring forming apparatus of the present invention.
１１ チャンバー １２ 半導体基板 １３，１４ 電極 １５ 赤外線ランプ １６ ガス導入口 １７ マスフローメータ １８ バルブ １９ 圧力調整用バルブ ２０ 真空ポンプ ２１ 高周波電源 ２２，３１ 石英窓 ２３ 熱電対 ２４ ヒータ ２５ シリコン基板 ２６ シリコン酸化膜 ２７，２９ ＴｉＮ膜 ２８ 銅 ３２ シリコン窒化膜 11 Chamber 12 Semiconductor Substrate 13, 14 Electrode 15 Infrared Lamp 16 Gas Inlet 17 Mass Flow Meter 18 Valve 19 Pressure Control Valve 20 Vacuum Pump 21 High Frequency Power Supply 22, 31 Quartz Window 23 Thermocouple 24 Heater 25 Silicon Substrate 26 Silicon Oxide Film 27 , 29 TiN film 28 Copper 32 Silicon nitride film
Claims (2)
ャンバーと、このチャンバ一に塩素系ガスを導入しプラ
ズマの物理化学的反応を起させる手段と、該半導体基板
に光導入窓を介して光を照射する赤外線ランプと、該光
導入窓を加熱する加熱手段とを備え、該光導入窓の温度
を所定の温度範囲に制御することを特徴とする微細配線
形成装置。1. A chamber for accommodating a semiconductor substrate coated with a copper film, means for introducing a chlorine-based gas into the chamber to cause a physicochemical reaction of plasma, and a light introducing window for the semiconductor substrate. A fine wiring forming apparatus, comprising: an infrared lamp for irradiating light with light, and heating means for heating the light introducing window, and controlling the temperature of the light introducing window within a predetermined temperature range.
も可視領域の光を吸収する膜を形成し、該赤外線ランプ
からの前記光を前記光導入窓に吸収させて加熱するもの
であることを特徴とする請求項１記載の微細配線形成装
置。2. The heating means forms a film that absorbs light in the visible region at the shortest in the light introducing window, and heats the light from the infrared lamp by absorbing the light in the light introducing window. The fine wiring forming apparatus according to claim 1, wherein:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5292319A JP2638447B2 (en) | 1993-11-24 | 1993-11-24 | Fine wiring forming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5292319A JP2638447B2 (en) | 1993-11-24 | 1993-11-24 | Fine wiring forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07147267A true JPH07147267A (en) | 1995-06-06 |
| JP2638447B2 JP2638447B2 (en) | 1997-08-06 |
Family
ID=17780241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5292319A Expired - Lifetime JP2638447B2 (en) | 1993-11-24 | 1993-11-24 | Fine wiring forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2638447B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009065124A (en) * | 2007-07-05 | 2009-03-26 | Interuniv Micro Electronica Centrum Vzw | Photon-induced removal of copper |
| WO2012124928A3 (en) * | 2011-03-14 | 2012-11-08 | 에스엔유 프리시젼 주식회사 | Deposition apparatus having light irradiation portion for removing foreign substance |
| WO2025112934A1 (en) * | 2023-11-28 | 2025-06-05 | 北京北方华创微电子装备有限公司 | Semiconductor process apparatus and control method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04162622A (en) * | 1990-10-26 | 1992-06-08 | Hitachi Ltd | Semiconductor device manufacturing method and plasma processing equipment |
| JPH05308064A (en) * | 1992-04-30 | 1993-11-19 | Mitsubishi Electric Corp | Method and apparatus for in-situ removal of native silicon oxide film |
-
1993
- 1993-11-24 JP JP5292319A patent/JP2638447B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04162622A (en) * | 1990-10-26 | 1992-06-08 | Hitachi Ltd | Semiconductor device manufacturing method and plasma processing equipment |
| JPH05308064A (en) * | 1992-04-30 | 1993-11-19 | Mitsubishi Electric Corp | Method and apparatus for in-situ removal of native silicon oxide film |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009065124A (en) * | 2007-07-05 | 2009-03-26 | Interuniv Micro Electronica Centrum Vzw | Photon-induced removal of copper |
| WO2012124928A3 (en) * | 2011-03-14 | 2012-11-08 | 에스엔유 프리시젼 주식회사 | Deposition apparatus having light irradiation portion for removing foreign substance |
| KR101232602B1 (en) * | 2011-03-14 | 2013-02-25 | 에스엔유 프리시젼 주식회사 | Evaporating apparatus having light emitting member with impurity removing function |
| WO2025112934A1 (en) * | 2023-11-28 | 2025-06-05 | 北京北方华创微电子装备有限公司 | Semiconductor process apparatus and control method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2638447B2 (en) | 1997-08-06 |
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