JPH0714833Y2 - Irradiation light intensity meter and amorphous silicon solar cell - Google Patents
Irradiation light intensity meter and amorphous silicon solar cellInfo
- Publication number
- JPH0714833Y2 JPH0714833Y2 JP1988075308U JP7530888U JPH0714833Y2 JP H0714833 Y2 JPH0714833 Y2 JP H0714833Y2 JP 1988075308 U JP1988075308 U JP 1988075308U JP 7530888 U JP7530888 U JP 7530888U JP H0714833 Y2 JPH0714833 Y2 JP H0714833Y2
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- amorphous silicon
- semiconductor layer
- layer
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000012780 transparent material Substances 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 4
- 235000000177 Indigofera tinctoria Nutrition 0.000 claims description 3
- 229940097275 indigo Drugs 0.000 claims description 3
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000008635 plant growth Effects 0.000 description 2
- 241000282412 Homo Species 0.000 description 1
- 206010042496 Sunburn Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
【考案の詳細な説明】 （産業上の利用分野） 本考案は、任意の対象物に入射する光量の積算値を測定
する照射光量積算計に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to an irradiation light amount integrating meter for measuring an integrated value of the amount of light incident on an arbitrary object.
（従来の技術とその課題） 従来光量測定に用いられている照射光量測定器は、工業
計測用として総入射光量の絶対値を高精度で測定するた
めのものが大半で、従っ構成も複雑になり、形状も大き
く、対象物への入射光をできるだけ遮らずに測定を行う
ことが容易にできなかった。したがって、栽培植物等へ
の照射量を、太陽光等を遮らずに行いがたかった。さら
に多点同時長時間測定を行うために便利な測定器は存在
しなかった。(Prior art and its problems) Most of the irradiation light quantity measuring instruments used for the conventional light quantity measurement are for measuring the absolute value of the total incident light quantity with high accuracy for industrial measurement, and the configuration is complicated accordingly. In addition, the shape is large, and it has not been possible to easily perform measurement without blocking the incident light on the object as much as possible. Therefore, it was difficult to irradiate the cultivated plants and the like without blocking the sunlight. Furthermore, there is no convenient measuring instrument for performing simultaneous multipoint measurement for a long time.
加えて従来の光量測定器は、植物の成長に関与する光の
波長成分に対する感度とのズレが大きいものが多く、ま
た屋外における直接入射光と散乱光に対する感度が大き
く違っているために、植物の成長と入射光量が対応しな
いと云う問題があった。この点、人体皮膚に入射する紫
外線の測定についても同じことがいえる。In addition, conventional light quantity measuring devices often have large deviations from the sensitivity to wavelength components of light involved in plant growth, and the sensitivity to outdoor direct incident light and scattered light is significantly different. However, there was a problem that the growth of the and the amount of incident light did not correspond. In this respect, the same can be said for the measurement of ultraviolet rays incident on human skin.
（課題を解決するための手段） 本考案はかかる点に鑑みなされたもので、その要旨とす
るところは、光電変換素子、電流−電圧変換器、電圧−
周波数変換器、分周器、パルス数積算器、表示駆動器、
表示器を備えてなる照射光量積算計、である。(Means for Solving the Problems) The present invention has been made in view of the above points, and the gist thereof is a photoelectric conversion element, a current-voltage converter, and a voltage-voltage converter.
Frequency converter, frequency divider, pulse number integrator, display driver,
It is an irradiation light amount integrating meter, which is provided with a display.
以下、本考案の構成要件を分説し、添付図面を参照しつ
つその好ましい実施例の態様の一例を説明する。Hereinafter, the constitutional requirements of the present invention will be explained, and an example of an aspect of a preferred embodiment will be described with reference to the accompanying drawings.
第１図は、本考案で使用する光電変換素子の構成を示
し、第２図は、本考案の照射光量積算計の素子構成を示
し、第３図はその他の素子構成の構成例を示す。FIG. 1 shows the structure of the photoelectric conversion element used in the present invention, FIG. 2 shows the element structure of the irradiation light amount integrating meter of the present invention, and FIG. 3 shows an example of the other element structure.
図に示すように、本考案の照射光量積算計は、少なくと
も、光電変換素子７、電流−電圧変換器８、電圧−周波
数変換器９、分周器10、パルス数積算器11、表示駆動器
12、表示器13を備えてなるものである。As shown in the figure, at least the photoelectric conversion element 7, the current-voltage converter 8, the voltage-frequency converter 9, the frequency divider 10, the pulse number integrator 11, and the display driver are provided in the irradiation light amount integrator of the present invention.
It is provided with a display 12 and a display 13.
（１）光電変換素子 光電変換素子は、照射光を受け、これを照射光量に応
じた電流に変換する素子である。(1) Photoelectric conversion element The photoelectric conversion element is an element that receives irradiation light and converts it into a current according to the irradiation light amount.
第１図は、上記したごとく、本考案で使用する光電変換
素子７、（もしくは14）の構成を示す説明図であって;1
は透明絶縁物層、２は導電性透明材料層、もしくは金属
層、３はｐ型もしくはｎ型半導体層、４は非晶質シリコ
ン層、５はｎ型もしくはｐ型半導体層、６は電極であ
る。透明絶縁物層１は可視光もしくは紫外光もしくは赤
外光もしくはその組合せの光に対して透明な窓材料で絶
縁物である。また、１は必ずしも必須でなく１がない場
合もありうる。導電性透明材料層２は可視光もしくは紫
外光もしくは赤外光もしくはその組合せの光に対して透
明な酸化物もしくは導電性を有する材料もしくは金属で
ある。ｐ型もしくはｎ型半導体層３は厚さ10〜500オン
グストローム程度のｐ型またはｎ型の通常非晶質もしく
は微結晶を含む非晶質シリコンである。非晶質シリコン
層４は厚さ１ミクロン程度以下の非晶質シリコンであ
り、光学活性層である。ｎ型もしくはｐ型半導体層５
は、上記４がｐ型の場合は、厚さ100〜500オングストロ
ーム程度のｎ型の非晶質もしくは微結晶を含む非晶質シ
リコンであり、逆に上記４がｎ型の場合は、厚さ10〜50
0オングストローム程度のｎ型の非晶質もしくは微結晶
を含む非晶質シリコンである。電極６は金属もしくは導
電性を有する酸化物である。すなわち、光電変換素子と
しては、非晶質シリコン太陽電池を使用することが好ま
しい。FIG. 1 is an explanatory view showing the configuration of the photoelectric conversion element 7 (or 14) used in the present invention as described above;
Is a transparent insulator layer, 2 is a conductive transparent material layer, or a metal layer, 3 is a p-type or n-type semiconductor layer, 4 is an amorphous silicon layer, 5 is an n-type or p-type semiconductor layer, and 6 is an electrode. is there. The transparent insulator layer 1 is a window material that is transparent to visible light, ultraviolet light, infrared light, or a combination thereof, and is an insulator. Further, 1 is not always essential, and 1 may not be present. The conductive transparent material layer 2 is an oxide or a material or metal having conductivity which is transparent to visible light, ultraviolet light, infrared light, or a combination thereof. The p-type or n-type semiconductor layer 3 is p-type or n-type normal amorphous or amorphous silicon containing microcrystals having a thickness of about 10 to 500 angstroms. The amorphous silicon layer 4 is amorphous silicon having a thickness of about 1 micron or less, and is an optically active layer. n-type or p-type semiconductor layer 5
Is amorphous silicon containing n-type amorphous or microcrystals having a thickness of about 100 to 500 angstroms when the above-mentioned 4 is the p-type, and conversely when the above-mentioned 4 is the n-type. 10-50
Amorphous silicon containing n-type amorphous or microcrystals of about 0 angstrom. The electrode 6 is a metal or an oxide having conductivity. That is, it is preferable to use an amorphous silicon solar cell as the photoelectric conversion element.
なお、第１図の光電変換素子において、透明絶縁物層
１の片面に所定の波長吸収特性を有する光学フィルター
を設けることにより、所望の波長範囲のみの光を選択的
に透過させ、吸収させることも好ましい態様である。例
えば紫外線のＡ波、Ｂ波、Ｃ波等を選択的に計測するこ
とが出来る。In the photoelectric conversion element of FIG. 1, an optical filter having a predetermined wavelength absorption characteristic is provided on one surface of the transparent insulating layer 1 to selectively transmit and absorb light in a desired wavelength range. Is also a preferred embodiment. For example, it is possible to selectively measure A wave, B wave, C wave, etc. of ultraviolet rays.
また、本考案で使用する光電変換素子においては、３
のｐ型もしくはｎ型半導体層、４の非晶質シリコン層、
５のｎ型もしくはｐ型半導体層、の厚みの総和が、特に
1.1ミクロン以下となる薄膜を使用することにより、基
板に垂直な入射角度以外の入射角度から入射する光に対
しても、効率良く光電変換を行い、植物や人体の皮膚に
作用を起こしている光量とほぼ同じ光量の光を検知可能
なようにすることが出来るのである。Further, in the photoelectric conversion element used in the present invention, 3
P-type or n-type semiconductor layer, 4 amorphous silicon layer,
The total thickness of the n-type or p-type semiconductor layers of 5 is
By using a thin film with a thickness of 1.1 microns or less, photoelectric conversion is efficiently performed even for light incident from angles other than the angle of incidence perpendicular to the substrate, and the amount of light that has an effect on the skin of plants and humans. It is possible to detect the light of almost the same amount as.
さらに特筆すべきことは、本考案で使用する光電変換
素子において、３のｐ型もしくはｎ型半導体層、４の非
晶質シリコン層、５のｎ型もしくはｐ型半導体層の厚み
の総和が、400〜3000オングストロームと云う特定の範
囲にあるものはその膜厚をこの中で特定範囲とすること
により、恐らく干渉作用によるものと思われるが、反射
光スペクトルを任意の色調に変化させることが可能なこ
とである。すなわち、光電変換素子そのものの色を、な
んら着色等することなく、美しい赤、ピンク、橙、黄
緑、青、藍、紫の任意の色とすることができるものであ
るから、装飾的にみてもきわめて有用なものである。こ
れは、本考案者により初めて見出された新規な知見であ
り、通常、周知のごとく、非晶質シリコン薄膜を使用し
た太陽電池の該薄膜表面は黒色の外観を有しており、極
めて汚らしい印象を与えるのが通常であったところ、３
のｐ型もしくはｎ型半導体層、４の非晶質シリコン層、
５のｎ型もしくはｐ型半導体層の厚みの総和が、例え
ば、1200〜1500オングストロームと特定範囲のものは、
驚くべきことに美しいピンク色の色相を示すのである!!
かかる観点からみても、光電変換素子の３のｐ型もしく
はｎ型半導体層、４の非晶質シリコン層、５のｎ型もし
くはｐ型半導体層の材料として非晶質シリコンおよびそ
の合金等を上記特定の薄膜厚みとして使用することが有
効である。It should be further noted that in the photoelectric conversion element used in the present invention, the sum of the thicknesses of the p-type or n-type semiconductor layer 3 and the amorphous silicon layer 4 and the n-type or p-type semiconductor layer 5 is It is possible that the reflected light spectrum can be changed to an arbitrary color tone, although it is thought that it is probably due to interference by setting the film thickness within a specific range of 400 to 3000 angstroms within this range. That's right. That is, the color of the photoelectric conversion element itself can be any color of beautiful red, pink, orange, yellow-green, blue, indigo, and purple without any coloring, so it should be viewed decoratively. Is also very useful. This is a new finding first discovered by the present inventor, and, as is generally known, the surface of the thin film of a solar cell using an amorphous silicon thin film has a black appearance and is very dirty. Where it usually makes an impression, 3
P-type or n-type semiconductor layer, 4 amorphous silicon layer,
The total thickness of the n-type or p-type semiconductor layers of 5 has a specific range of 1200 to 1500 angstroms, for example.
Surprisingly, it shows a beautiful pink hue !!
From this point of view, amorphous silicon and its alloys are used as the material of the p-type or n-type semiconductor layer 3 of the photoelectric conversion element, the amorphous silicon layer 4 of 5, and the n-type or p-type semiconductor layer 5 of the photoelectric conversion element. It is effective to use it as a specific thin film thickness.
第２図はすでにのべた如く、本考案の光電変換素子の
素子構成を示すが、このように、照射光測定用の光電変
換素子７とは別の光電変換素子14と電荷充電用キャパシ
タ15を組合せて、回路駆動電源として用いることができ
る。また第３図に示すように、第２図の光電変換素子1
4、電荷充電用キャパシタ15を省略し、その代わり、補
助電源18として、乾電池等の一次電池や充電可能な二次
電池を用いることも勿論可能である。FIG. 2 shows the element structure of the photoelectric conversion element of the present invention as described above. In this way, the photoelectric conversion element 14 and the charge charging capacitor 15 different from the photoelectric conversion element 7 for measuring the irradiation light are shown. It can be used in combination as a circuit driving power supply. Further, as shown in FIG. 3, the photoelectric conversion element 1 of FIG.
4. It is of course possible to omit the charge charging capacitor 15 and use a primary battery such as a dry battery or a rechargeable secondary battery as the auxiliary power source 18 instead.
（２）電流−電圧変換器 光電変換素子の電流出力を電圧に変換する素子８であっ
て、光電変換素子の出力、電圧−周波数変換器の分解
能、およびS/N比を考慮に入れて設計される。実用的に
は抵抗器が有用である。この場合１Ω〜1kΩ程度の範囲
の値をもつ抵抗器が使用される。さらに好ましくは、増
幅作用を有する素子であり、その増幅率としては、105V
/A以上のものを用いる。(2) Current-voltage converter The element 8 for converting the current output of the photoelectric conversion element into a voltage, which is designed in consideration of the output of the photoelectric conversion element, the resolution of the voltage-frequency converter, and the S / N ratio. To be done. Resistors are practically useful. In this case, a resistor having a value in the range of 1Ω to 1kΩ is used. More preferably, it is an element having an amplification action, and its amplification factor is 10 5 V
Use / A or higher.
（３）電圧−周波数変換器 上記電流−電圧変換器より出力された電圧値Ｖに比例し
た周波数ｆを有するパルス電圧を出力する素子９であ
る。(3) Voltage-Frequency Converter The element 9 outputs a pulse voltage having a frequency f proportional to the voltage value V output from the current-voltage converter.
（４）分周器 上記電圧−周波数変換器より出力された周波数をある一
定の分周率で分周する装置10であり、本考案で使用する
分周率は百分の一から一億分の一程度の範囲であること
が好ましい。(4) Frequency divider This is a device 10 that divides the frequency output from the voltage-frequency converter at a constant frequency division rate, and the frequency division rate used in the present invention is from 1 to 100 million minutes. It is preferably in the range of about 1.
（５）パルス数積算器 上記分周器より出力されたパルスを積算し、積算数をＮ
進数表現に変換する装置11である。Ｎは２〜10の値をと
る。なお、第２図におけるが如く、瞬時値表示用切替ス
イッチ16により照射光量の瞬時値を表しすることも出来
るが、かかる場合においては、該パルス積算値は一定間
隔毎に自動的に積算値をリセットする機能17を有するの
である。(5) Pulse number integrator The pulses output from the frequency divider are integrated and the integrated number is N
It is a device 11 for converting into a decimal representation. N has a value of 2-10. As shown in FIG. 2, the instantaneous value display changeover switch 16 can be used to represent the instantaneous value of the irradiation light amount. In such a case, the pulse integrated value is automatically calculated at regular intervals. It has a reset function 17.
（６）表示駆動器 Ｎ進数表現入力に対応して表示器を駆動する装置12であ
る。なお、第２図、第３図に示した構成例の如く、瞬時
値表示用切替スイッチ16により照射光量の瞬時値を表示
せしめることも可能であるが、斯る場合においては、一
定期間、出力を変化させないような機能を有するものが
好ましい。(6) Display driver This is a device 12 that drives the display corresponding to the N-ary representation input. It is also possible to display the instantaneous value of the irradiation light amount by the instantaneous value display changeover switch 16 as in the configuration example shown in FIGS. 2 and 3, but in such a case, the output is output for a certain period of time. Those having a function that does not change
（７）表示器 表示駆動器より出力された電圧により、積算数を表示す
る素子13であり、消費電力の少ないものが好ましい。ま
た、紫外線カットフィルターを併用することもできる。
なお、瞬時値表示用切替スイッチ16により照射光量の瞬
時値を表示することができ、さらに表示リセットスイッ
チ17により積算値を０にすることができる。(7) Display Device It is an element 13 for displaying the integrated number by the voltage output from the display driver, and it is preferable that the element 13 consumes less power. Also, an ultraviolet cut filter can be used together.
The instantaneous value display changeover switch 16 can display the instantaneous value of the irradiation light amount, and the display reset switch 17 can set the integrated value to zero.
第４図は、本考案の照射光量積算計の外観を示す斜視図
である。FIG. 4 is a perspective view showing the appearance of the irradiation light amount integrating meter of the present invention.
（作用） まず、表示リセットスイッチ17により表示器13が０にリ
セットされる。次に、本考案の照射光量積算計に入射し
た照射光は光電変換素子７で電流に変換され、電流−電
圧変換器８で電圧に変換される。さらに電圧−周波数変
換器９で電圧に比例する周波数をもつパルス列に変換さ
れ、分周器10で、パルス数積算器11の入力としての最適
な値に分周されたパルス列になる。パルス数積算器11で
は入力されたパルス列の数を積算して、その積算値を表
示器13で表示させるために、表示器駆動器12が動作でき
る符号に変換される。さらに、表示駆動器12の出力によ
って表示器13に照射光の積算値を表示するのである。ま
た、瞬時値表示用切替スイッチ16を切替えることによ
り、照射光量の瞬時値の表示も可能である。(Operation) First, the display 13 is reset to 0 by the display reset switch 17. Next, the irradiation light incident on the irradiation light amount integrating meter of the present invention is converted into a current by the photoelectric conversion element 7 and converted into a voltage by the current-voltage converter 8. Further, the voltage-frequency converter 9 converts the pulse train into a pulse train having a frequency proportional to the voltage, and the frequency divider 10 divides the pulse train into an optimum value as an input to the pulse number integrator 11. The pulse number integrator 11 integrates the number of input pulse trains, and in order to display the integrated value on the display 13, it is converted into a code that the display driver 12 can operate. Further, the integrated value of the irradiation light is displayed on the display 13 by the output of the display driver 12. Further, by switching the instantaneous value display changeover switch 16, it is possible to display the instantaneous value of the irradiation light amount.
（産業上の利用可能性） 本考案は任意の対象物に入射する光量の積算値を表示さ
せるもので、光電変換素子、積算器、表示器を一体化
し、さらに光電変換素子を駆動用電源として兼ねること
により、小型化を行い、対象物のすぐ側で入射光量を精
度よく測定できるようにしたものである。用途として
は、工業用の日射光量積算計はもちろんのこと、植物栽
培用における総日射量の測定、さらに局所的な日射量の
ばらつきを定量化するなど農業用として広く好適に使用
される。本考案者らの知見によると、本考案の如く、非
晶質シリコン太陽をセンサー（場合によっては、電源と
しても）として用いることにより、植物成長に関わる波
長と非晶質シリコン太陽電池の感度が近似しているた
め、結晶太陽電池をセンサーとして用いる場合より、実
効的な照射光測定が行なえるのである。また携帯用屋外
日射光量計として、人体皮膚の日焼けの予知、および抑
制のための計器としても使え、健康器具またはレジャー
用としても好適に使用可能なものである。特に最近、屋
外における紫外線強度の関心が高くなっているが、すで
に述べたように、適当な紫外線フィルターを設けること
により、紫外線のＡ波、Ｂ波、Ｃ波などと呼ばれるよう
に特に有害な紫外線を選択的に計測する道具としても使
用可能である。また、所望により積算計としての機能だ
けではなく、入射光量の瞬時値を表示させることもでき
るので、必要もしくは有害な光の強度を、簡便にかつ対
象物のすぐ側で、必要な時に測定することが可能であ
る。(Industrial applicability) The present invention displays the integrated value of the amount of light incident on an arbitrary object. The photoelectric conversion element, the integrator, and the display are integrated, and the photoelectric conversion element is used as a driving power source. By doing so, the size is reduced and the amount of incident light can be accurately measured on the immediate side of the object. As the application, not only an industrial solar radiation amount integrating meter, but also widely used for agriculture such as measuring the total solar radiation amount for plant cultivation and quantifying the local variation of solar radiation amount. According to the knowledge of the present inventors, the wavelength related to plant growth and the sensitivity of the amorphous silicon solar cell can be improved by using the amorphous silicon sun as a sensor (in some cases, as a power source) as in the present invention. Since they are close to each other, effective irradiation light measurement can be performed as compared with the case where a crystalline solar cell is used as a sensor. Further, it can be used as a portable outdoor solar photometer as an instrument for predicting and suppressing sunburn of human skin, and can also be suitably used for health equipment or leisure. In particular, recently, there is a growing interest in the intensity of ultraviolet rays outdoors, but as already mentioned, by providing an appropriate ultraviolet ray filter, particularly harmful ultraviolet rays such as A waves, B waves, and C waves of ultraviolet rays are called. It can also be used as a tool to selectively measure. If desired, not only the function as an integrator but also the instantaneous value of the incident light quantity can be displayed, so that the intensity of necessary or harmful light can be measured easily and immediately on the side of the object when needed. It is possible.
第１図は本考案の光電変換素子の素子構成を示す説明図
であり、第２図は本考案の照射光量積算計の構成を示す
ブロック図であり、第３図は補助電源を伴う場合の照射
光量積算計の構成を示すブロック図である。第４図は本
考案の光電変換素子の外観の一例を示す斜視図である。 図において、 １…透明絶縁物層、２…導電性透明材料層、もしくは金
属層、３…ｐ型もしくはｎ型半導体層、４…非晶質シリ
コン層、５…ｎ型もしくはｐ型半導体層、６…電極、７
…光電変換素子、８…電流−電圧変換器、９…電圧−周
波数変換器、10…分周器、11…パルス数積算器、12…表
示器駆動器、13…表示器、14…電源用光電変換素子、15
…電荷充電用キャパシタ、16…瞬時値表示用切替スイッ
チ、17…表示リセットスイッチ、18…補助電源、19…ケ
ースを示す。FIG. 1 is an explanatory view showing an element structure of a photoelectric conversion element of the present invention, FIG. 2 is a block diagram showing a structure of an irradiation light amount integrating meter of the present invention, and FIG. 3 is a case with an auxiliary power source. It is a block diagram which shows the structure of an irradiation light amount integrating meter. FIG. 4 is a perspective view showing an example of the external appearance of the photoelectric conversion element of the present invention. In the figure, 1 ... Transparent insulator layer, 2 ... Conductive transparent material layer, or metal layer, 3 ... P-type or n-type semiconductor layer, 4 ... Amorphous silicon layer, 5 ... N-type or p-type semiconductor layer, 6 ... Electrode, 7
... photoelectric conversion element, 8 ... current-voltage converter, 9 ... voltage-frequency converter, 10 ... frequency divider, 11 ... pulse number integrator, 12 ... indicator driver, 13 ... indicator, 14 ... power supply Photoelectric conversion element, 15
... Charge charging capacitor, 16 ... Instantaneous value display changeover switch, 17 ... Display reset switch, 18 ... Auxiliary power supply, 19 ... Case.
Claims (4)
周波数変換器、分周器、パルス数積算器、表示駆動器、
瞬時値表示用切替スイッチ、表示器および電荷充電用キ
ャパシタを備えてなる照射光量積算計にして、該光電変
換素子が、透明絶縁物層、導電性透明材料層、ｐ型半導
体層、非晶質シリコン層、ｎ型半導体層、および金属も
しくは導電性を有する酸化物からなる電極を備えた非晶
質シリコン太陽電池であり、該ｐ型半導体層、非晶質シ
リコン層およびｎ型半導体層の厚みの総和を、40〜300n
mの範囲とし、かくして、干渉により、該非晶質シリコ
ン太陽電池からの反射光を、赤、ピンク、橙、黄、緑、
青、藍、紫色から選択されるいずれかの色調とせしめた
光電変換素子である前記照射光量積算計。1. A photoelectric conversion element, a current-voltage converter, a voltage-
Frequency converter, frequency divider, pulse number integrator, display driver,
An irradiation light quantity integrator comprising an instantaneous value display changeover switch, a display and a charge charging capacitor, wherein the photoelectric conversion element comprises a transparent insulating material layer, a conductive transparent material layer, a p-type semiconductor layer, and an amorphous material. An amorphous silicon solar cell comprising a silicon layer, an n-type semiconductor layer, and an electrode made of a metal or an oxide having conductivity, the thickness of the p-type semiconductor layer, the amorphous silicon layer and the n-type semiconductor layer. 40-300n
Therefore, the reflected light from the amorphous silicon solar cell is changed to red, pink, orange, yellow, green,
The irradiation light amount integrating meter, which is a photoelectric conversion element having a color tone selected from blue, indigo, and purple.
リコン層およびｎ型半導体層の厚みの総和を、120〜150
nmの範囲とし、かくして、干渉により、反射光をピンク
の色相とせしめた光電変換素子である請求項１記載の積
算計。2. The photoelectric conversion element has a total thickness of p-type semiconductor layer, amorphous silicon layer and n-type semiconductor layer of 120 to 150.
The integrating meter according to claim 1, which is a photoelectric conversion element having a wavelength in the range of nm and thus causing reflected light to have a pink hue due to interference.
導体層、非晶質シリコン層、ｎ型半導体層、および金属
もしくは導電性を有する酸化物からなる電極を備えた非
晶質シリコン太陽電池であって、該ｐ型半導体層、非晶
質シリコン層およびｎ型半導体層の厚みの総和を、40〜
300nmの範囲とし、かくして、干渉により、該非晶質シ
リコン太陽電池からの反射光を、赤、ピンク、橙、黄、
緑、青、藍、紫色のうちのいずれかひとつの色の色調と
せしめたことを特徴とする非晶質シリコン太陽電池。3. An amorphous material comprising a transparent insulator layer, a conductive transparent material layer, a p-type semiconductor layer, an amorphous silicon layer, an n-type semiconductor layer, and an electrode made of a metal or a conductive oxide. A silicon solar cell, wherein the total thickness of the p-type semiconductor layer, the amorphous silicon layer and the n-type semiconductor layer is 40 to
In the range of 300 nm, thus, the interference of reflected light from the amorphous silicon solar cell with red, pink, orange, yellow,
An amorphous silicon solar cell characterized by having a color tone of any one of green, blue, indigo, and purple.
型半導体層の厚みの総和を、120〜150nmの範囲とし、か
くして、干渉により、反射光をピンクの色相とせしめた
請求項３記載の非晶質シリコン太陽電池。4. A p-type semiconductor layer, an amorphous silicon layer and n.
The amorphous silicon solar cell according to claim 3, wherein the total thickness of the type semiconductor layer is in the range of 120 to 150 nm, and the reflected light has a pink hue due to interference.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988075308U JPH0714833Y2 (en) | 1988-06-08 | 1988-06-08 | Irradiation light intensity meter and amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988075308U JPH0714833Y2 (en) | 1988-06-08 | 1988-06-08 | Irradiation light intensity meter and amorphous silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01179232U JPH01179232U (en) | 1989-12-22 |
| JPH0714833Y2 true JPH0714833Y2 (en) | 1995-04-10 |
Family
ID=31300379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988075308U Expired - Lifetime JPH0714833Y2 (en) | 1988-06-08 | 1988-06-08 | Irradiation light intensity meter and amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0714833Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7818770B2 (en) * | 2022-03-23 | 2026-02-24 | 株式会社エイブルコンピュータ | Image Processing Method |
| JP7818769B2 (en) * | 2022-03-23 | 2026-02-24 | 株式会社エイブルコンピュータ | Image Processing Device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60114726A (en) * | 1983-11-28 | 1985-06-21 | Fuji Electric Corp Res & Dev Ltd | Actinometer |
| JPS62150640U (en) * | 1986-03-18 | 1987-09-24 |
-
1988
- 1988-06-08 JP JP1988075308U patent/JPH0714833Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01179232U (en) | 1989-12-22 |
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