JPH07150335A - Treatment of substrate - Google Patents
Treatment of substrateInfo
- Publication number
- JPH07150335A JPH07150335A JP32341093A JP32341093A JPH07150335A JP H07150335 A JPH07150335 A JP H07150335A JP 32341093 A JP32341093 A JP 32341093A JP 32341093 A JP32341093 A JP 32341093A JP H07150335 A JPH07150335 A JP H07150335A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- porous substrate
- sputtering
- porous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
(57)【要約】
【目的】 多孔質基板とその上に形成される薄膜とが高
い密着性を有するための基板の処理方法を提供する。
【構成】 スパッタリング装置内で多孔質基板上に薄膜
を形成するに際し、該装置内を予め減圧し、該基板を１
５０℃以上で加熱し、該基板中の水分を除去することを
特徴とする基板の処理方法。(57) [Summary] [Object] To provide a method for treating a substrate so that a porous substrate and a thin film formed thereon have high adhesion. [Structure] When a thin film is formed on a porous substrate in a sputtering apparatus, the inside of the apparatus is decompressed in advance,
A method for treating a substrate, which comprises heating at 50 ° C. or higher to remove moisture in the substrate.
Description
【０００１】[0001]
【産業上の利用分野】本発明は基板の処理方法に関し、
詳しくは多孔質基板上に、スパッタリング法を用いて、
導体や半導体、例えば薄膜センサー等の薄膜を高い密着
性をもって形成し得る基板の処理方法に関する。FIELD OF THE INVENTION The present invention relates to a method for treating a substrate,
Specifically, on the porous substrate, using the sputtering method,
The present invention relates to a method for treating a substrate on which a conductor or a semiconductor, for example, a thin film such as a thin film sensor can be formed with high adhesion.
【０００２】[0002]
【従来の技術】導体や半導体をスパッタリング法を用い
て基板上に形成せしめ、これに所定のパターンをリフト
オフ法やエッチング法等を用いて形成する方法が広く用
いられている。こうして得られた薄膜は、生産効率に優
れ、かつ多層化が可能であるため電子デバイス用に好適
に用いられる。しかしながら、これらの薄膜は、またそ
の用途から長時間の安定性や低価格、高歩留りで生産で
きることが最低限要求される。例えば、絶縁性基板を用
いて形成される薄膜センサー等は、薄膜の特徴を生か
し、応答性に優れた温度計測が可能なセンサーとして注
目を集めている。2. Description of the Related Art A method in which a conductor or a semiconductor is formed on a substrate by a sputtering method and a predetermined pattern is formed on the substrate by a lift-off method or an etching method is widely used. The thin film thus obtained is excellent in production efficiency and can be formed into multiple layers, and thus is suitably used for electronic devices. However, these thin films are required to have stability for a long time, low cost, and high yield in the minimum due to their applications. For example, a thin film sensor or the like formed using an insulating substrate has been attracting attention as a sensor capable of measuring temperature with excellent responsiveness by utilizing the characteristics of the thin film.
【０００３】しかしながら、これらの用途においては、
高歩留りが求められるにも拘らず、基板から薄膜が剥離
したり、低密着性のため、その後の工程での生産性の低
下を招いてしまっている。However, in these applications,
Despite the demand for high yield, the thin film is peeled off from the substrate, and the low adhesion results in a decrease in productivity in the subsequent steps.
【０００４】この傾向は多孔質基板において特に顕著で
ある。この理由は、多孔質基板表面の汚れは洗浄により
取り除けるが、その後の乾燥または加熱処理だけでは不
充分で多孔質基板内部に水分が残存するため、この多孔
質基板内部の水分が、多孔質基板上に形成された薄膜と
の密着性低下の原因となっている。従って、多孔質基板
と薄膜の高い密着性が要求されているのが実状である。This tendency is particularly remarkable in the porous substrate. The reason for this is that the dirt on the surface of the porous substrate can be removed by washing, but the subsequent drying or heat treatment is insufficient and the water remains inside the porous substrate. This is a cause of a decrease in adhesion with the thin film formed above. Therefore, in reality, high adhesion between the porous substrate and the thin film is required.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、これら従来
技術の課題を解決すべくなされたもので、多孔質基板と
その上に形成される薄膜とが高い密着性を有するための
基板の処理方法を提供することを目的とする。DISCLOSURE OF THE INVENTION The present invention has been made to solve these problems of the prior art, and treats the substrate so that the porous substrate and the thin film formed thereon have high adhesion. The purpose is to provide a method.
【０００６】[0006]
【課題を解決するための手段】本発明の上記目的は、多
孔質基板の上に薄膜を形成する前に、予め一定の前処理
を行なうことによって達成される。The above object of the present invention is achieved by performing a certain pretreatment in advance before forming a thin film on a porous substrate.
【０００７】すなわち、本発明の基板の処理方法は、ス
パッタリング装置内で多孔質基板上に薄膜を形成するに
際し、該装置内を予め減圧し、該基板を１５０℃以上で
加熱し、該基板中の水分を除去することを特徴とする。That is, according to the substrate processing method of the present invention, when a thin film is formed on a porous substrate in a sputtering apparatus, the inside of the apparatus is decompressed in advance, the substrate is heated at 150 ° C. or higher, and It is characterized by removing water.
【０００８】以下、本発明の基板の処理方法をさらに詳
細に説明する。スパッタリング法によって、基板上に薄
膜を形成するには、基板を予備洗浄、本洗浄、乾燥、必
要に応じて加熱、冷却の工程によって基板を洗浄し、そ
の後、基板をスパッタリング装置内に導入し、この基板
上に薄膜をスパッタリング等によって形成する。しか
し、基板の融点または軟化点によっては加熱、冷却の工
程を要しない。The substrate processing method of the present invention will be described in more detail below. To form a thin film on the substrate by the sputtering method, the substrate is washed by the steps of pre-cleaning, main cleaning, drying, heating if necessary, and cooling, and then the substrate is introduced into a sputtering device, A thin film is formed on this substrate by sputtering or the like. However, depending on the melting point or softening point of the substrate, heating and cooling steps are not required.
【０００９】ここで用いられる多孔質基板として、セラ
ミック基板や多結晶フォルステライト基板等が挙げら
れ、セラミック基板としては具体的にはアルミナ基板、
窒化アルミニウム基板等が例示される。The porous substrate used here includes a ceramic substrate, a polycrystalline forsterite substrate, and the like. Specifically, the ceramic substrate is an alumina substrate,
An example is an aluminum nitride substrate.
【００１０】本発明では、この多孔質基板をスパッタリ
ング装置内に導入し、多孔質基板の表面に薄膜を形成さ
せる前に加熱処理を行なう。その際の加熱温度は１５０
℃以上であり、加熱時間は５分以上であることが望まし
い。この加熱処理に際しては、スパッタリング装置内を
減圧下、好ましくはスパッタリング圧力以下に減圧する
ことが必要である。具体的には１×１０-7Ｔｏｒｒ以下
にすることが望ましい。この加熱処理は、多孔質基板を
基板ホルダーにセットし、基板ホルダーを１〜１０ｒｐ
ｍで回転させながら行なう。In the present invention, this porous substrate is introduced into a sputtering apparatus, and heat treatment is performed before forming a thin film on the surface of the porous substrate. The heating temperature at that time is 150
It is desirable that the heating temperature is 5 ° C. or higher and the heating time is 5 minutes or longer. At the time of this heat treatment, it is necessary to reduce the pressure inside the sputtering apparatus to a reduced pressure, preferably below the sputtering pressure. Specifically, it is preferably set to 1 × 10 −7 Torr or less. In this heat treatment, the porous substrate is set in the substrate holder, and the substrate holder is set to 1 to 10 rp.
Perform while rotating at m.
【００１１】このように加熱処理された多孔質基板は、
冷却された後、スパッタリング装置内で、スパッタリン
グ法により薄膜が形成される。この薄膜形成材料として
は、クロム、アルミニウム、ニッケル、コバルト、チタ
ン、金、五酸化二タンタル、酸化ケイ素、サーミスター
材料、例えばＭｎ−Ｎｉ−Ｃｏ系酸化物、Ｍｎ−Ｎｉ−
Ｃｒ系酸化物、Ｍｎ−Ｎｉ−Ｃｏ−Ｃｒ系酸化物等が例
示される。このようにして、多孔質基板上に、密着性の
良好な薄膜が形成できる。The porous substrate thus heat-treated is
After cooling, a thin film is formed by a sputtering method in the sputtering device. As the thin film forming material, chromium, aluminum, nickel, cobalt, titanium, gold, ditantalum pentoxide, silicon oxide, thermistor material such as Mn-Ni-Co based oxide, Mn-Ni-
Examples include Cr-based oxides and Mn-Ni-Co-Cr-based oxides. In this way, a thin film having good adhesion can be formed on the porous substrate.
【００１２】[0012]
【作用】本発明では、多孔質基板を減圧下に置くことに
よって、多孔質基板内部に残存する水分が基板表面に移
行する。そして、減圧下に加熱されているため、表面に
移行した水分が気化する。このような多孔質基板を成膜
するので、多孔質基板と薄膜の間に水分が介在すること
がなく、高い密着性が図れる。In the present invention, the water remaining inside the porous substrate is transferred to the surface of the substrate by placing the porous substrate under reduced pressure. Then, since it is heated under reduced pressure, the water transferred to the surface is vaporized. Since such a porous substrate is formed into a film, moisture is not present between the porous substrate and the thin film, and high adhesion can be achieved.
【００１３】[0013]
【実施例】以下、実施例等に基づき本発明を具体的に説
明する。EXAMPLES The present invention will be specifically described below based on Examples and the like.
【００１４】実施例１〜６および比較例１〜３ 多孔質基板として純度９９．５％、縦１００ｍｍ×横１
００ｍｍ×厚み５ｍｍのアルミナ、純度９８％、縦５０
ｍｍ×横５０ｍｍ×厚み１ｍｍの窒化アルミニウムをそ
れぞれ用い、この多孔質基板を通常の方法で、予備洗
浄、本洗浄、乾燥した。 Examples 1 to 6 and Comparative Examples 1 to 3 As a porous substrate, purity is 99.5%, length 100 mm × width 1
00 mm x 5 mm thick alumina, purity 98%, length 50
This porous substrate was pre-washed, main-washed and dried by a usual method using aluminum nitride each having a size of 50 mm x 50 mm x 1 mm in thickness.
【００１５】次に、この多孔質基板をスパッタリング装
置内の８面体のホルダーにセットし、スパッタ装置内を
１×１０-7Ｔｏｒｒ以下に減圧し、ハロゲンランプヒー
ターにより、表１に示す温度および時間で基板を回転さ
せながら赤外線放射加熱した。但し、比較例１〜２は、
この減圧下の加熱処理を行なわなかった。Next, this porous substrate was set in an octahedral holder in the sputtering apparatus, the pressure in the sputtering apparatus was reduced to 1 × 10 -7 Torr or less, and the temperature and time shown in Table 1 were set by a halogen lamp heater. The substrate was rotated by infrared radiation while being rotated. However, Comparative Examples 1-2
This heat treatment under reduced pressure was not performed.
【００１６】この多孔質基板を加熱した後、酸化膜Ａ：
Ｍｎ−Ｎｉ−Ｃｏ−Ｏ（Ｍｎ：Ｎｉ：Ｃｏ＝８０モル
％：７．５モル％：１２．５モル％）、酸化膜Ｂ＝Ｍｎ
−Ｎｉ−Ｃｒ−Ｏ（Ｍｎ：Ｎｉ：Ｃｒ＝８０モル％：
７．５モル％：１２．５モル％）を下記に示すスパッタ
リング条件で成膜し、厚さ１．５μｍのサーミスタ薄膜
とした。また、ターゲツトサイズは縦３８ｍｍ×横１３
ｍｍ×厚み５ｍｍで、基板の回転は５ｒｐｍであった。After heating this porous substrate, the oxide film A:
Mn-Ni-Co-O (Mn: Ni: Co = 80 mol%: 7.5 mol%: 12.5 mol%), oxide film B = Mn
-Ni-Cr-O (Mn: Ni: Cr = 80 mol%:
7.5 mol%: 12.5 mol%) was formed under the following sputtering conditions to form a thermistor thin film having a thickness of 1.5 μm. In addition, the target size is 38 mm in length × 13 in width
mm × thickness 5 mm, the rotation of the substrate was 5 rpm.
【００１７】スパッタリング圧：１×１０-3Ｔｏｒｒ アルゴンガス流量：２５ｃｃ／ｍｉｎ スパッタリング電力：１．０ｋＷ（ＲＦ電源） 基板ホルダ回転数：５ｒｐｍSputtering pressure: 1 × 10 -3 Torr Argon gas flow rate: 25 cc / min Sputtering power: 1.0 kW (RF power supply) Substrate holder rotation speed: 5 rpm
【００１８】このサーミスタ薄膜が形成された多孔質基
板の密着強度をクロスカット・テープ剥離試験によって
評価した。この方法は、カツターを用いて成膜面を２ｍ
ｍ角の升目状にカットし、カプトンテープをカット面に
接着した後、引き剥し、全く剥れのないものを良、少し
でも剥れのあるものを不良とし、その結果を表１に示し
た。The adhesion strength of the porous substrate having the thermistor thin film formed thereon was evaluated by a cross-cut tape peeling test. In this method, the film-forming surface is 2 m using a cutter.
After cutting into squares of m-square and adhering the Kapton tape to the cut surface, peeling off, those with no peeling are good, those with even a little peeling are bad, and the results are shown in Table 1. .
【００１９】[0019]
【表１】 [Table 1]
【００２０】この結果、１５０℃以上で基板処理をした
実施例１〜６は、基板処理をしない比較例１〜２や１０
０℃で基板処理をした比較例３と比べて多孔質基板と薄
膜の密着性が良好であることが判る。As a result, in Examples 1 to 6 in which the substrate processing was performed at 150 ° C. or higher, Comparative Examples 1 to 2 and 10 in which the substrate processing was not performed.
It can be seen that the adhesion between the porous substrate and the thin film is better than in Comparative Example 3 in which the substrate treatment was performed at 0 ° C.
【００２１】[0021]
【発明の効果】以上説明したように、本発明の基板の処
理方法によって、多孔質基板上に密着性の良好な薄膜が
形成できる。このため、本発明はサーミスタ等の製造に
好適に用いられる。As described above, according to the substrate processing method of the present invention, a thin film having good adhesion can be formed on a porous substrate. Therefore, the present invention is preferably used for manufacturing a thermistor or the like.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 友成 健二 埼玉県上尾市大字原市1333番地の２三井金 属鉱業株式会社総合研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kenji Tomonari 2 Mitsui Kinzoku Mining Co., Ltd. Research Institute, 1333 No. 1333, Ojiwara, Ageo City, Saitama Prefecture
Claims (1)
薄膜を形成するに際し、該装置内を予め減圧し、該基板
を１５０℃以上で加熱し、該基板中の水分を除去するこ
とを特徴とする基板の処理方法。1. When forming a thin film on a porous substrate in a sputtering apparatus, the inside of the apparatus is preliminarily depressurized and the substrate is heated at 150 ° C. or higher to remove the water content in the substrate. Substrate processing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32341093A JPH07150335A (en) | 1993-11-30 | 1993-11-30 | Treatment of substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32341093A JPH07150335A (en) | 1993-11-30 | 1993-11-30 | Treatment of substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07150335A true JPH07150335A (en) | 1995-06-13 |
Family
ID=18154398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32341093A Pending JPH07150335A (en) | 1993-11-30 | 1993-11-30 | Treatment of substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07150335A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000065617A (en) * | 1998-08-20 | 2000-03-03 | Ricoh Co Ltd | Manufacturing method of micro bridge sensor |
| JP2003017837A (en) * | 2001-06-28 | 2003-01-17 | Tokuyama Corp | Manufacturing method of printed wiring board |
-
1993
- 1993-11-30 JP JP32341093A patent/JPH07150335A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000065617A (en) * | 1998-08-20 | 2000-03-03 | Ricoh Co Ltd | Manufacturing method of micro bridge sensor |
| JP2003017837A (en) * | 2001-06-28 | 2003-01-17 | Tokuyama Corp | Manufacturing method of printed wiring board |
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