JPH0715578B2 - Master plate for photomask - Google Patents
Master plate for photomaskInfo
- Publication number
- JPH0715578B2 JPH0715578B2 JP4160614A JP16061492A JPH0715578B2 JP H0715578 B2 JPH0715578 B2 JP H0715578B2 JP 4160614 A JP4160614 A JP 4160614A JP 16061492 A JP16061492 A JP 16061492A JP H0715578 B2 JPH0715578 B2 JP H0715578B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- reticle
- pattern
- photomask
- phase shift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、縮小投影露光装置の原
画であるホトマスク（レティクル）に係り、特に微細パ
ターンを転写するのに好適なホトマスク用原板に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask (reticle) which is an original image of a reduction projection exposure apparatus, and more particularly to a photomask original plate suitable for transferring a fine pattern.
【０００２】[0002]
【従来の技術】原画パターンの描かれたマスク（以下、
レティクルと称す）を照明系で照明しレティクル上のパ
ターンをウェーハ上に転写する縮小投影露光装置には、
転写できるパターンの微細化が要求されている。縮小投
影露光装置がどの程度微細なパターンまで転写できるか
を表わす解像度は、周期的に明暗の変化するレティクル
パターンを用いて、ウェーハ上で隣接する２ヶ所の明部
が分離できるかどうかで評価される。この解像度を向上
させる一手法として、レティクル上の隣接する２ヶ所の
透過部分の照明光の位相を変えればよいことが知られて
いる。従来、照明光の位相を変化させるレティクルパタ
ーンについては、アイ・イー・イー・イートランザクシ
ョン オン エレクトロン デバイシズ，ＥＤ−２９
巻，第１２号（１９８２年）第１８２８頁（IEEE Trans
on Electron Devices, vol ED-29No.12 (1982年）p182
8）におけるマーク ディー レヴンソン（Marc D. Lev
enson）等による“インプルーヴイング レゾルーショ
ン イン ホトリソグラフィウィズ ア フエイズ−シ
フトマスク（Improving Resolution in Photolithograp
hy with a Phase-Shifting Mask）”と題する文献にお
いて論じられている。本文献で提案しているレティクル
は、レティクル基板上にパターンの原画となる遮光部を
設け、更にその上に照明光の位相を変化させる層（以
下、位相シフト層と称す）を設けている。そのためレテ
ィクル製作に当っては、まず遮光パターン形成のための
露光が必要であり、エッチング等による遮光パターン形
成後、次に位相シフト層のパターンを遮光パターンに正
しく合せて露光する工程が必要である。このためレティ
クル製作に必要な工程が複雑であること、および位相シ
フト層のパターン露光時に位置合せ誤差が生じた場合は
照明光の位相を変える機能が劣化すること等の難点があ
る。また、特開昭５８−１７３７４４号公報にはレティ
クル基板上に位相シフト層のパターンを形成し、次に遮
光パターンを前記位相シフト層のパターンに位置合わせ
して形成することが示唆されている。しかし、シフタの
存在する部分とシフタの存在しない部分との間にシフタ
膜厚分の段差が生じるので露光性能低下の原因となって
いる。2. Description of the Related Art A mask with an original pattern drawn (hereinafter referred to as
(A reticle) is illuminated by an illumination system to transfer the pattern on the reticle onto the wafer.
There is a demand for finer transferable patterns. The resolution, which represents how fine a pattern can be transferred by the reduction projection exposure apparatus, is evaluated by whether or not two adjacent bright parts on the wafer can be separated by using a reticle pattern whose brightness changes periodically. It As one method for improving the resolution, it is known that the phase of the illumination light at two adjacent transmitting portions on the reticle may be changed. Conventionally, regarding a reticle pattern that changes the phase of the illumination light, IEE Transaction on Electron Devices, ED-29.
Vol. 12, No. 12 (1982), page 1828 (IEEE Trans
on Electron Devices, vol ED-29No.12 (1982) p182
8) Marc D. Lev
enson) et al. “Improving Resolution in Photolithograp
Hy with a Phase-Shifting Mask) ”. The reticle proposed in this document has a light-shielding portion which is the original image of the pattern on the reticle substrate, and the phase of the illumination light is further provided on it. Therefore, in order to manufacture a reticle, it is necessary to first expose to form a light-shielding pattern, and after forming the light-shielding pattern by etching, etc., the phase is changed. It is necessary to properly expose the shift layer pattern to the light-shielding pattern, which complicates the process required to manufacture the reticle, and when an alignment error occurs during pattern exposure of the phase shift layer, the illumination is performed. There is a problem that the function of changing the phase of light is deteriorated, etc. In addition, Japanese Patent Laid-Open No. 58-173744 discloses a phase shift layer pattern on a reticle substrate. It is suggested that the light-shielding pattern is formed by aligning the light-shielding pattern with the pattern of the phase shift layer, but the shifter film is formed between the portion where the shifter is present and the portion where the shifter is not present. Since a step is formed by the thickness, the exposure performance is deteriorated.
【０００３】[0003]
【発明が解決しようとする課題】本発明の目的は、上記
難点を解消し簡単な工程で遮光パターンと照明光の位相
を変える層のパターンの両方を同時に精度良く形成する
ことができるようにしたホトマスク（レティクル）用原
板を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and to enable simultaneous formation of both a light-shielding pattern and a pattern of a layer for changing the phase of illumination light with high precision by a simple process. It is to provide a master plate for a photomask (reticle).
【０００４】[0004]
【課題を解決するための手段】上記目的を達成するため
に、本発明では透明基体であるガラス基板上にまず位相
シフト層を設け、その上に遮光膜を設けるホトマスク原
板を用いた。In order to achieve the above object, in the present invention, a photomask original plate is used in which a phase shift layer is first provided on a glass substrate which is a transparent substrate, and a light shielding film is provided thereon.
【０００５】[0005]
【作用】レティクル製造に当っては、遮光膜上にレジス
トを塗布した後、部分的に露光エネルギーの異なる露光
を行って、開口部の位相シフト層を除去する部分とその
まま残しておく部分とで異なる厚さのレジストパターン
を形成するようにした。そして、遮光膜と位相シフト層
のエッチング、レジストのドライエッチング、遮光膜の
エッチングの順にエッチングを行うことにより、所望の
レティクルを得ることができるように透明基体であるガ
ラス基板上に位相シフト層と遮光部を順に形成したホト
マスクが得られる。このように簡単な製法で得られるた
めのホトマスク用原板を提供するものである。In the manufacture of the reticle, after the resist is applied on the light-shielding film, the exposure is performed with different exposure energies, and the portion where the phase shift layer of the opening is removed and the portion where it is left as it is. The resist patterns having different thicknesses were formed. Then, by performing etching in order of the light-shielding film and the phase shift layer, the dry etching of the resist, and the light-shielding film, a phase shift layer is formed on the glass substrate which is a transparent substrate so that a desired reticle can be obtained. A photomask in which light-shielding portions are sequentially formed can be obtained. As described above, the present invention provides a master plate for a photomask that can be obtained by a simple manufacturing method.
【０００６】[0006]
【実施例】以下、本発明を実施例を用いて説明する。図
１は、本発明を適用したレティクルの断面を示す図であ
る。ここでは、Ｃｒから成る遮光膜３に５ヶ所の開口部
４−１，４−２，４−３，４−４，４−５からなる５本
の線パターンが形成されている例をとりあげ、線パター
ンの長手方向に対して垂直方向の断面を示している。図
示したレティクルは、ガラス基板１と遮光膜３との間
に、蒸着したＳｉＯ2からなる位相シフト層２をはさむ
ことを特徴としている。位相シフト層２の厚さｔは、そ
の屈折率をｎ、照明光の波長をλとするときEXAMPLES The present invention will be described below with reference to examples. FIG. 1 is a view showing a cross section of a reticle to which the present invention is applied. Here, an example in which five line patterns composed of five openings 4-1, 4-2, 4-3, 4-4, 4-5 are formed in the light-shielding film 3 made of Cr, A cross section in a direction perpendicular to the longitudinal direction of the line pattern is shown. Reticle illustrated is provided between the light shielding film 3 and the glass substrate 1, it is characterized by sandwiching a phase shift layer 2 made of SiO 2 was deposited. When the thickness t of the phase shift layer 2 is n and the wavelength of the illumination light is λ,
【０００７】[0007]
【数１】 [Equation 1]
【０００８】で与えられ、本実施例では０.３８μｍと
してある（ｎ＝１.４７，λ＝０.３６５μｍ）。図１に
示すように、５ヶ所の開口部のうち、１ヶ所おきの開口
部４−２，４−４は位相シフト層２が除去されている。
このため、このレティクルを上面からコヒーレンス度の
高い照明光で照明すると、レティクル透過光の振幅分布
は図２に示すように隣接する開口部で符号が反転し、そ
の結果従来の照明光の位相を変えるレティクルと全く同
等の効果が現われる。And is 0.38 μm in this embodiment (n = 1.47, λ = 0.365 μm). As shown in FIG. 1, the phase shift layer 2 is removed from every other opening 4-2, 4-4 among the five openings.
Therefore, when this reticle is illuminated from above with illumination light having a high degree of coherence, the amplitude distribution of the reticle transmitted light has its sign inverted in the adjacent openings as shown in FIG. The effect is exactly the same as the changing reticle.
【０００９】次に本発明のレティクルの製造手順を図３
を用いて説明する。まず、（Ａ）に示すようにガラス基
板１上にＳｉＯ2２を３８００Å蒸着し、その上に遮光
膜３であるＣｒを８００Å蒸着する。更にその上にレジ
スト６を塗布する。次に、開口部のパターンを露光す
る。このとき、パターンごとに露光強度を変えてあるの
で、現像処理後のレジストパターンは、（Ｂ）に示すよ
うに、パターン部４−２，４−４は完全に除去されてい
るが、パターン部４−１，４−３，４−５はレジスト膜
厚が約１／２に減少しているだけである。Next, the manufacturing procedure of the reticle of the present invention will be described with reference to FIG.
Will be explained. First, as shown in (A), SiO 2 2 is vapor-deposited on the glass substrate 1 by 3800Å, and Cr, which is the light-shielding film 3, is vapor-deposited thereon by 800Å. Further, a resist 6 is applied on it. Next, the pattern of the opening is exposed. At this time, since the exposure intensity is changed for each pattern, in the resist pattern after the development processing, the pattern portions 4-2 and 4-4 are completely removed as shown in FIG. The resist film thicknesses of the resist films 4-1, 4-3 and 4-5 are reduced to about 1/2.
【００１０】パターンごとに露光時間を変える方法とし
ては、ＥＢ描画の場合の走査時間を変化させることによ
り可能である。ここでＣｒをエッチングし、さらに稀釈
したフッ酸でＳｉＯ2層２をエッチングすると、（Ｃ）
に示すように開口部４−２，４−４が形成される。次に
（Ｄ）に示すように残っているレジストを垂直方向にド
ライエッチングして膜厚を減少させていき、パターン部
４−１，４−３，４−５のレジストを除去する。再びＣ
ｒをエッチングすると、（Ｅ）に示すように遮光膜３に
５ヶ所の開口部が形成される。最後に表面に残っている
レジストをすべて除去することにより、図１に示す本発
明のレティクルが完成する。As a method of changing the exposure time for each pattern, it is possible to change the scanning time in the case of EB drawing. Here, when Cr is etched and the SiO 2 layer 2 is further etched with diluted hydrofluoric acid, (C)
Openings 4-2 and 4-4 are formed as shown in FIG. Next, as shown in (D), the remaining resist is dry-etched in the vertical direction to reduce the film thickness, and the resist of the pattern portions 4-1, 4-3, 4-5 is removed. C again
When r is etched, five openings are formed in the light shielding film 3 as shown in (E). Finally, by removing all the resist remaining on the surface, the reticle of the present invention shown in FIG. 1 is completed.
【００１１】本実施では、位相シフト層としてＳｉＯ2
の蒸着膜を用いたが、この材料は数１の条件を満たし、
かつレティクル洗浄等に耐えるものであればよい。In this embodiment, SiO 2 is used as the phase shift layer.
The vapor deposition film of was used, but this material satisfies the condition of Equation 1,
In addition, any material that can withstand reticle cleaning and the like may be used.
【００１２】[0012]
【発明の効果】本発明のホトマスク用原板を用いれば、
照明光の位相をかえる層を有するレティクルの製造に当
り、遮光膜上に形成すべきパターンと位相シフト層に形
成すべきパターンを簡単な工程で精度良く形成すること
ができる。さらに、シフタ層のパターン形成後に段差上
に遮光膜を形成する場合に比べ、遮光膜に段差が生じに
くく露光性能を向上する効果を有する。このため、レテ
ィクル製造工程の簡素化、パターンの信頼性向上の効果
が得られる。EFFECT OF THE INVENTION By using the photomask master plate of the present invention,
When manufacturing a reticle having a layer that changes the phase of the illumination light, the pattern to be formed on the light-shielding film and the pattern to be formed on the phase shift layer can be accurately formed by a simple process. Further, compared to the case where the light-shielding film is formed on the step after forming the pattern of the shifter layer, the light-shielding film is less likely to have the step, and the exposure performance is improved. Therefore, the effects of simplifying the reticle manufacturing process and improving the reliability of the pattern can be obtained.
【図１】本発明のレティクル用基板が提供するレティク
ルの断面を示す図。FIG. 1 is a view showing a cross section of a reticle provided by a reticle substrate of the present invention.
【図２】本発明のレティクル透過後の照明光の振幅分布
を示す図。FIG. 2 is a diagram showing an amplitude distribution of illumination light after passing through a reticle of the present invention.
【図３】本発明のレティクルの製造プロセスを示す図。FIG. 3 is a diagram showing a reticle manufacturing process of the present invention.
１…レティクル基板、２…照明光の位相を変化させる
層、３…遮光膜、４−１〜４−５…遮光膜部に形成され
た開口部、５…レティクル透過後の振幅分布、６…レジ
スト。DESCRIPTION OF SYMBOLS 1 ... Reticle substrate, 2 ... Layer that changes the phase of illumination light, 3 ... Light-shielding film, 4-1 to 4-5 ... Openings formed in light-shielding film portion, 5 ... Amplitude distribution after transmission of reticle, 6 ... Resist.
Claims (3)
つ入射光に対して出射光の位相をほぼ反転させる位相シ
フト層を有することを特徴とするホトマスク用原板。1. A photomask original plate comprising a phase shift layer which transmits light between a transparent substrate and a light-shielding film and which substantially reverses the phase of emitted light with respect to incident light.
て、上記位相シフト層の屈折率をｎ、入射光の波長をλ
とするとき、上記位相シフト層の厚さがλ／｛２（ｎ−
１）｝であることを特徴とするホトマスク用原板。2. The photomask original plate according to claim 1, wherein the phase shift layer has a refractive index of n and an incident light wavelength of λ.
And the thickness of the phase shift layer is λ / {2 (n−
1)} is a master plate for a photomask.
において、上記位相シフト層はＳｉＯ2よりなることを
特徴とするホトマスク用原板。3. The photomask original plate according to claim 1 or 2, wherein the phase shift layer is made of SiO 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4160614A JPH0715578B2 (en) | 1992-06-19 | 1992-06-19 | Master plate for photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4160614A JPH0715578B2 (en) | 1992-06-19 | 1992-06-19 | Master plate for photomask |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13413885A Division JPH0690504B2 (en) | 1985-06-21 | 1985-06-21 | Photomask manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05181258A JPH05181258A (en) | 1993-07-23 |
| JPH0715578B2 true JPH0715578B2 (en) | 1995-02-22 |
Family
ID=15718744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4160614A Expired - Lifetime JPH0715578B2 (en) | 1992-06-19 | 1992-06-19 | Master plate for photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0715578B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09150870A (en) * | 1995-11-27 | 1997-06-10 | Sogo Package Kk | Tissue paper carton |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558037A (en) * | 1978-06-30 | 1980-01-21 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Photo mask |
| JPS5597220A (en) * | 1979-01-19 | 1980-07-24 | Dainippon Printing Co Ltd | Method of producing metal filter |
| DE3374452D1 (en) * | 1982-04-05 | 1987-12-17 | Ibm | Method of increasing the image resolution of a transmitting mask and improved masks for performing the method |
-
1992
- 1992-06-19 JP JP4160614A patent/JPH0715578B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09150870A (en) * | 1995-11-27 | 1997-06-10 | Sogo Package Kk | Tissue paper carton |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05181258A (en) | 1993-07-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |