JPH07165934A - Photo-crosslinking of polyethylene product by excimer laser - Google Patents

Photo-crosslinking of polyethylene product by excimer laser

Info

Publication number
JPH07165934A
JPH07165934A JP34252893A JP34252893A JPH07165934A JP H07165934 A JPH07165934 A JP H07165934A JP 34252893 A JP34252893 A JP 34252893A JP 34252893 A JP34252893 A JP 34252893A JP H07165934 A JPH07165934 A JP H07165934A
Authority
JP
Japan
Prior art keywords
excimer laser
photo
benzophenone
polyethylene
polyethylene product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34252893A
Other languages
Japanese (ja)
Inventor
Masahiro Ueda
正紘 上田
Fujio Sakka
不二雄 目
Hideki Tanaka
英樹 田中
Hitoshi Fujii
仁 藤井
Kiyoaki Sakai
清章 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sakai Chemical Industry Co Ltd
Original Assignee
Sakai Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sakai Chemical Industry Co Ltd filed Critical Sakai Chemical Industry Co Ltd
Priority to JP34252893A priority Critical patent/JPH07165934A/en
Publication of JPH07165934A publication Critical patent/JPH07165934A/en
Pending legal-status Critical Current

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  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

PURPOSE:To perform the photo-crosslinking of a PE article useful as a heat- insulation material for roof, etc., in a short time and high efficiency at a low cost by irradiating a sheet or foamed PE article containing a benzophenone-type photo-initiator at a specific concentration with excimer laser beam. CONSTITUTION:This photo-crosslinking process is carried out by incorporating a PE raw material with preferably 0.01-1wt.% of a benzophenone-type compound such as benzophenone of formula I or 4-chlorobenzophenone of formula II as a photo-initiator, forming a sheet-formed or foamed PE article with an extruder and irradiating the PE article with excimer laser beam. The depth of the crosslinking reaction relative to the thickness of the PE article is arbitrarily adjustable by adjusting the concentration of the photo-initiator to enable the formation of PE article meeting the purpose.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はシート状または発泡状の
ポリエチレン製品の架橋を安価にするエキシマレーザー
によるポリエチレン製品の光架橋に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to photocrosslinking of polyethylene products by an excimer laser, which makes it possible to inexpensively crosslink sheet-like or foam-like polyethylene products.

【0002】[0002]

【従来の技術】従来、建築物の屋根断熱材、自動車の内
張り、風呂マットに使用されるシート状または発泡状の
ポリエチレン製品の熱・力学的強度を向上させるために
電子線照射が知られているも、かかる手段にあっては電
子を高真空に維持されている加速管内にて数百KV以上
で加速し、ポリエチレン製品へ照射するものであるた
め、出力800KW程度の小型の装置であっても非常に
高価で、しかも照射装置とは別にシールドルームが必要
となり、設備コストが高い欠点を有している。
2. Description of the Related Art Conventionally, electron beam irradiation has been known to improve the thermal and mechanical strength of sheet-shaped or foamed polyethylene products used for roof insulation of buildings, linings of automobiles and bath mats. However, in such means, electrons are accelerated in a high-vacuum accelerating tube at several hundred KV or more to irradiate a polyethylene product, and therefore, it is a small device with an output of about 800 KW. Is very expensive and requires a shield room in addition to the irradiation device, which has a drawback of high equipment cost.

【0003】又、キセノンランプ、水銀ランプによる架
橋では、光強度が弱すぎるため照射に長時間必要とする
欠点を有していた。
Further, the cross-linking with a xenon lamp or a mercury lamp has a drawback that irradiation requires a long time because the light intensity is too weak.

【0004】[0004]

【発明が解決しようとする課題】本発明は短時間で効率
よく架橋反応を起こすと共に、製造コストを低減し、し
かも光開始剤の濃度を調整してポリエチレン製品の厚み
に対する架橋反応の及ぶ深さを任意に調整可能となして
種々の使用目的に応じたポリエチレン製品を簡易に製造
することができるエキシマレーザーによるポリエチレン
製品の光架橋を提供せんとするものである。
DISCLOSURE OF THE INVENTION The present invention efficiently causes a crosslinking reaction in a short time, reduces the manufacturing cost, and adjusts the concentration of the photoinitiator, and the depth of the crosslinking reaction with respect to the thickness of the polyethylene product. It is intended to provide photocrosslinking of a polyethylene product by an excimer laser, which can be arbitrarily adjusted to easily produce a polyethylene product according to various purposes of use.

【0005】[0005]

【課題を解決するための手段】本発明は上記従来技術に
基づく設備コスト、照射時間等の課題に鑑み、ベンゾフ
ェノン、4ークロロベンゾフェノン等のベンゾフェノン
系の光開始剤を、濃度0.01重量%〜1重量%にて添加
して製造されたポリエチレン製品にエキシマレーザーを
照射して光架橋すると共に、濃度を適宜選択してポリエ
チレン製品内部での架橋率に変化を与えることを可能に
したエキシマレーザーによるポリエチレン製品の光架橋
を提供して上記欠点を解消せんとしたものである。
In view of the problems of equipment cost, irradiation time and the like based on the above conventional technique, the present invention uses a benzophenone photoinitiator such as benzophenone, 4-chlorobenzophenone and the like in a concentration of 0.01% by weight. Excimer laser that makes it possible to change the cross-linking ratio inside the polyethylene product by appropriately selecting the concentration while irradiating the polyethylene product manufactured by adding ~ 1 wt% with the excimer laser. The above-mentioned drawbacks are not solved by providing photo-crosslinking of polyethylene products according to.

【0006】[0006]

【実施例】以下本発明の一実施例を図面に基づいて説明
すると、ポリエチレン原料に光開始剤であるベンゾフェ
ノン、4ークロロベンゾフェノン等のベンゾフェノン系
を所定濃度にて添加し、図1に示す様な押出成形機1に
よりシート状または発泡状のポリエチレン製品Wを製造
する。
EXAMPLE An example of the present invention will be described below with reference to the drawings. A benzophenone system such as benzophenone or 4-chlorobenzophenone, which is a photoinitiator, is added to a polyethylene raw material at a predetermined concentration, and as shown in FIG. The sheet-shaped or foamed polyethylene product W is manufactured by the simple extruder 1.

【0007】押出成形機1は円筒状のケーシング2内に
モーター3に連結したスクリュー4が設けられると共
に、先端には矩形断面のノズル5と基端には原料投入口
6が設けられている。
The extruder 1 is provided with a screw 4 connected to a motor 3 in a cylindrical casing 2, a nozzle 5 having a rectangular cross section at the tip and a raw material inlet 6 at the base.

【0008】又、ベンゾフェノンおよび4ークロロベン
ゾフェノンの化学構造式は、次の化1および化2に夫々
示す。
The chemical structural formulas of benzophenone and 4-chlorobenzophenone are shown in the following chemical formulas 1 and 2, respectively.

【0009】[0009]

【化1】 [Chemical 1]

【0010】[0010]

【化2】 [Chemical 2]

【0011】そして、ポリエチレン製品Wを支柱7に上
下動自在に装着するサンプルホルダー8に取りつけ、エ
キシマレーザー発振器9よりポリエチレン製品Wにエキ
シマレーザーを照射して光架橋を行う。
Then, the polyethylene product W is attached to the sample holder 8 mounted on the column 7 so as to be vertically movable, and the excimer laser oscillator 9 irradiates the polyethylene product W with an excimer laser to perform photocrosslinking.

【0012】エキシマレーザーとしては、波長249n
mのKrF、波長350のXeF、波長308nmのX
eClおよび波長193nmのArF等のエキシマレー
ザーを室温、通常20℃前後の大気中にて行い、且つパ
ルスレーザーの出力は300mJ/パルス、繰り返し周
波数は15Hzに固定し、レーザー照射口でのビーム断
面を10mm×20mmとなしてポリエチレン製品W表
面での照射強度を150J/cm2 とし、ポリエチレン
製品W表裏面での全照射量を450J/gとした。
The excimer laser has a wavelength of 249n.
KrF of m, XeF of wavelength 350, X of wavelength 308 nm
Excimer laser such as eCl and ArF with a wavelength of 193 nm is performed in the atmosphere at room temperature, usually around 20 ° C., and the pulse laser output is fixed at 300 mJ / pulse and the repetition frequency is 15 Hz, and the beam cross section at the laser irradiation port is fixed. The irradiation intensity on the surface of the polyethylene product W was 150 J / cm 2, and the total irradiation amount on the front and back surfaces of the polyethylene product W was 450 J / g.

【0013】又、エキシマレーザーは希ガスとハロゲン
ガスとの組み合わせにより約50nmごとに単パルスの
紫外線を出し、その出力は例えば波長249nmのKr
Fでは1パルス当たりのエネルギーは300mJ/10
ns、これを単位時間当たりのエネルギーに換算すると
30メガワットとなる。
Further, the excimer laser emits a single pulse of ultraviolet light every about 50 nm by a combination of a rare gas and a halogen gas, and its output is, for example, Kr having a wavelength of 249 nm.
In F, the energy per pulse is 300 mJ / 10
ns, which is 30 megawatts when converted to energy per unit time.

【0014】次に、ポリエチレン製品Wの架橋量の測定
については、JISに規格されているMelt Flow Rete法
(以下「MFR法」と略称する)によって行い、かかる
MFR法は図3に示す様に、円筒部材10の中に収容した
ポリエチレン製品Wに、ウエイト11によって一定の圧力
を加えると共に、溶融する温度である190度まで加熱
して溶融し、円筒部材10より滴下させるものであり、エ
キシマレーザーを照射しないポリエチレン製品Wの滴下
量に対するエキシマレーザーを照射したポリエチレン製
品Wの滴下量の負の対数比(以下「ΔMFR」と略称す
る)を架橋量として求める。
Next, the amount of cross-linking of the polyethylene product W is measured by the Melt Flow Rete method (hereinafter abbreviated as "MFR method") specified in JIS, and the MFR method is as shown in FIG. The polyethylene product W contained in the cylindrical member 10 is applied with a constant pressure by the weight 11 and heated to a melting temperature of 190 degrees to be melted and dropped from the cylindrical member 10. A negative logarithmic ratio (hereinafter, abbreviated as "ΔMFR") of the dropping amount of the polyethylene product W irradiated with the excimer laser with respect to the dropping amount of the polyethylene product W not irradiated with is obtained as the crosslinking amount.

【0015】かかるΔMFRは他の測定法であるゲル分
率法との間には、図4に示す様にゲル分率で35%以下
の1≦ーlog(ΔMFR)≦3の範囲では直線的な関
係を有している。
As shown in FIG. 4, the ΔMFR is linear with respect to other measuring methods such as the gel fraction method in the range of 1 ≦ −log (ΔMFR) ≦ 3 where the gel fraction is 35% or less. Have a relationship.

【0016】尚、ゲル分率法は図5に示す様に、エキシ
マレーザーを照射したポリエチレン製品Wを細かく切断
してガラスファイバーからなる円筒フイルター12内に収
容して、ソックスレー抽出器13中にセットし、沸騰した
キシレンの中で約20時間程度、酸化しない様に窒素ガ
ス中で行い、抽出後、円筒フイルター12をアセトンで洗
浄し、室温で約7時間程度で真空乾燥すると、エキシマ
レーザーの照射によって生じた網目状の架橋高分子の正
確な量が不溶高分子のゲル量として測定する。
In the gel fraction method, as shown in FIG. 5, an excimer laser-irradiated polyethylene product W is finely cut and housed in a cylindrical filter 12 made of glass fiber and set in a Soxhlet extractor 13. Then, perform it in boiling xylene for about 20 hours in nitrogen gas so as not to oxidize it, and after extraction, wash the cylindrical filter 12 with acetone and vacuum dry at room temperature for about 7 hours. The precise amount of the network-like crosslinked polymer generated by the measurement is measured as the gel amount of the insoluble polymer.

【0017】上記2つの測定方法は適宜選択可能であ
る。
The above two measuring methods can be appropriately selected.

【0018】実験例1 ポリエチレン原料にベンゾフェノンを0.01重量%、0.
1重量%、1重量%の濃度となる様に添加して押出成形
機1により、厚さ0.3mm〜2.4mmの複数のシート状
のポリエチレン製品Wを製造し、かかるポリエチレン製
品WにKrFエキシマレーザーを、その全照射量がポリ
エチレン製品Wの両面合わせて450J/gにて照射し
た。
Experimental Example 1 0.01% by weight of benzophenone was added to a polyethylene raw material as 0.01% by weight.
A plurality of sheet-shaped polyethylene products W having a thickness of 0.3 mm to 2.4 mm are manufactured by the extruder 1 after adding them so as to have a concentration of 1% by weight and 1% by weight. The excimer laser was irradiated at a total dose of 450 J / g for both sides of the polyethylene product W combined.

【0019】そして、MFR法によって架橋を測定した
ところ、図6に示す結果となり、かかる結果より光開始
剤であるベンゾフェノンの濃度が1重量%のときには架
橋はポリエチレン製品Wの表面の極近傍でのみ生じ、又
濃度が0.01重量%と少なくなると、架橋反応はポリエ
チレン製品Wの全域で均一に生じることが認められた。
When the cross-linking was measured by the MFR method, the results shown in FIG. 6 were obtained. From these results, when the concentration of the benzophenone as the photoinitiator was 1% by weight, the cross-linking was carried out only near the surface of the polyethylene product W. It was confirmed that the crosslinking reaction occurred uniformly in the entire area of the polyethylene product W when it occurred or when the concentration was reduced to 0.01% by weight.

【0020】又、濃度を0.1重量%にすると、架橋反応
は表面より1mmぐらいの深さまで最も効果的に生じ、
この濃度ではーlog(ΔMFR)の値はポリエチレン
製品W厚さにて比例して減衰、即ちポリエチレン製品W
内の光強度は厚さに対して指数関数的に減衰する。
When the concentration is 0.1% by weight, the crosslinking reaction most effectively occurs up to a depth of about 1 mm from the surface,
At this concentration, the value of -log (ΔMFR) decreases proportionally with the thickness of polyethylene product W, that is, polyethylene product W
The light intensity within decays exponentially with thickness.

【0021】実験例2 ポリエチレン原料にベンゾフェノン、4ークロロベンゾ
フェノンを夫々0.01重量%、0.1重量%、1重量%の
濃度となる様に添加して押出成形機1により、厚さ1.2
mmの複数のシート状のポリエチレン製品Wを製造し、
かかるポリエチレン製品WにKrFエキシマレーザー
を、その全照射量がポリエチレン製品Wの両面合わせて
450J/gにて照射した。
Experimental Example 2 Benzophenone and 4-chlorobenzophenone were added to a polyethylene raw material so as to have concentrations of 0.01% by weight, 0.1% by weight and 1% by weight, respectively. .2
mm to produce a plurality of sheet-shaped polyethylene products W,
The polyethylene product W was irradiated with a KrF excimer laser at a total irradiation amount of 450 J / g in total on both sides of the polyethylene product W.

【0022】そして、MFR法によって架橋を測定した
ところ、図7に示す結果となり、かかる結果より何れの
光開始剤に対しても0.1重量%のときが、他の二つより
も効果的であることが認められた。
When cross-linking was measured by the MFR method, the results shown in FIG. 7 were obtained. From these results, it was found that 0.1 wt% was more effective than any other photoinitiator than the other two. Was found to be

【0023】即ち、光開始剤が0.1重量%のときには表
面から0.6mmの深さ以内ではKrFエキシマレーザー
が架橋に効果的に利用されており、濃度が低いときには
KrFエキシマレーザーはあまり架橋反応に使われなく
て深い領域にまで到達するが、逆に濃度が1重量%以上
になると大半の光が表面近傍でのみ架橋に使われてしま
い、いずれの場合も平均的な架橋量は0.1重量%のとき
よりは小さくなる。
That is, when the photoinitiator is 0.1% by weight, the KrF excimer laser is effectively used for crosslinking within a depth of 0.6 mm from the surface, and when the concentration is low, the KrF excimer laser is less crosslinked. It reaches the deep region without being used for the reaction, but conversely, when the concentration becomes 1% by weight or more, most of the light is used for crosslinking only near the surface, and in both cases the average amount of crosslinking is 0. It becomes smaller than that of 0.1% by weight.

【0024】実験例3 ポリエチレン原料にベンゾフェノンを0.1重量%の濃度
となる様に添加して押出成形機1により、厚さ1.2mm
の複数のシート状のポリエチレン製品Wを製造し、かか
るポリエチレン製品WにKrFエキシマレーザー、Ar
Fエキシマレーザー、XeFエキシマレーザーおよびX
eClエキシマレーザーを、その全照射量がポリエチレ
ン製品Wの両面合わせて450J/gにて照射した。
Experimental Example 3 Benzophenone was added to a polyethylene raw material so as to have a concentration of 0.1% by weight, and the thickness was 1.2 mm by an extruder 1.
A plurality of sheet-shaped polyethylene products W are manufactured, and the KrF excimer laser, Ar
F excimer laser, XeF excimer laser and X
The eCl excimer laser was irradiated at a total dose of 450 J / g for both sides of the polyethylene product W combined.

【0025】そして、MFR法によって架橋を測定した
ところ、図8に示す結果となり、かかる結果よりKrF
エキシマレーザーが最も効果的であることが認められ、
他のエキシマレーザーでは若干の効果が認められた。
The cross-linking was measured by the MFR method, and the results shown in FIG. 8 were obtained.
The excimer laser was found to be the most effective,
Some effects were observed with other excimer lasers.

【0026】ポリエチレンの架橋反応を起こすには、以
下に示す化学反応式中の化3の様に、先ずはCーHの結
合を切断する必要があり、そしてCーH結合の分子の結
合解離エネルギーは約100kcal/mol、即ち約
4.4eVであり、一方ArFエキシマレーザーの光子エ
ネルギーは約6.4eV、KrFエキシマレーザーのそれ
は約5.0eV、XeClエキシマレーザーのそれは約4.
0eVおよびXeFエキシマレーザーのそれは約3.4e
Vであるため、原理的にはKrFエキシマレーザーとA
rFエキシマレーザーのみがCーH結合を直接に切断、
換言すれば架橋に利用できる。
In order to cause the cross-linking reaction of polyethylene, it is necessary to first break the CH bond, as shown in Chemical formula 3 in the chemical reaction formula below, and then the bond dissociation of the CH bond molecule. Energy is about 100 kcal / mol, ie about
The photon energy of ArF excimer laser is about 6.4 eV, that of KrF excimer laser is about 5.0 eV, and that of XeCl excimer laser is about 4.0 eV.
That of 0eV and XeF excimer laser is about 3.4e
Since it is V, in principle, a KrF excimer laser and A
Only the rF excimer laser directly cuts the CH bond,
In other words, it can be used for crosslinking.

【0027】[0027]

【化3】 [Chemical 3]

【0028】[0028]

【化4】 [Chemical 4]

【0029】しかしながら、図9に示す様にベンゾフェ
ノンを0.1重量%の濃度となる様に添加して押出成形機
1により、厚さ0.3mmのポリエチレン製品Wのスペク
トルを測定した処、紫外線の吸収スペクトルは250n
m近傍に強い吸収帯を示しているも、ArFエキシマレ
ーザーの波長近傍には強い吸収帯は存在せず、上記の結
果と成る。
However, as shown in FIG. 9, benzophenone was added so as to have a concentration of 0.1% by weight and the spectrum of the polyethylene product W having a thickness of 0.3 mm was measured by the extruder 1. Has an absorption spectrum of 250n
Although a strong absorption band is shown in the vicinity of m, there is no strong absorption band in the vicinity of the wavelength of the ArF excimer laser, and the above result is obtained.

【0030】この結果と次に示す化学反応式の化5、化
6および化7によると、光を吸収して励起したベンゾフ
ェノンが光開始剤として作用しながら架橋反応を開始す
ることがわかる。
From this result and the following chemical reaction formulas (5), (6) and (7), it is understood that benzophenone excited by absorbing light starts a crosslinking reaction while acting as a photoinitiator.

【0031】[0031]

【化5】 [Chemical 5]

【0032】[0032]

【化6】 [Chemical 6]

【0033】[0033]

【化7】 [Chemical 7]

【0034】又、4ークロロベンゾフェノンの化学構造
はベンゾフェノンと酷似し、且つ紫外線吸収スペクトル
も略同じであり、4ークロロベンゾフェノンは光架橋に
おいて同様に作用する。
Further, the chemical structure of 4-chlorobenzophenone is very similar to that of benzophenone and the ultraviolet absorption spectrum is almost the same, and 4-chlorobenzophenone acts similarly in photocrosslinking.

【0035】[0035]

【発明の効果】要するに本発明は、ポリエチレン原料に
ベンゾフェノン、4ークロロベンゾフェノン等のベンゾ
フェノン系の光開始剤を所定濃度で添加し、押出成形機
によりシート状または発泡状のポリエチレン製品とな
し、該ポリエチレン製品にエキシマレーザーを照射した
ので、架橋率としてゲル分率で30%〜35%のものが
得られ、しかも表面から0.3 mmの層では50%にする
ことができ、これによってポリエチレン製品の加熱変型
温度を80℃程度までとするなら、それに必要な架橋率
は十分得られ、又光開始剤の吸収帯に近い波長のエキシ
マレーザーを室温の大気中にて照射することにより、従
来のキセノンランプ、水銀ランプによる架橋に比し、短
時間で効率よく架橋反応を起こすことができると共に、
電子線照射方法に比してもその製造コストを低減でき、
又光開始剤の濃度を調整することにより、ポリエチレン
原料の厚みに対する架橋反応の及ぶ深さを任意に調整す
ることができる。
In summary, the present invention adds a benzophenone-based photoinitiator such as benzophenone and 4-chlorobenzophenone to a polyethylene raw material at a predetermined concentration to form a polyethylene product in a sheet or foam form by an extruder. Since the polyethylene product was irradiated with an excimer laser, a gel fraction of 30% to 35% was obtained as the cross-linking rate, and it could be 50% in the layer 0.3 mm from the surface. If the deformation temperature is up to about 80 ° C, a sufficient cross-linking ratio required for it can be obtained, and by irradiating an excimer laser having a wavelength close to the absorption band of the photoinitiator in the atmosphere at room temperature, a conventional xenon lamp can be obtained. As compared with the cross-linking with a mercury lamp, the cross-linking reaction can occur efficiently in a short time,
The manufacturing cost can be reduced compared to the electron beam irradiation method,
Further, by adjusting the concentration of the photoinitiator, the depth of the crosslinking reaction with respect to the thickness of the polyethylene raw material can be arbitrarily adjusted.

【0036】又、光開始剤の濃度を0.01重量%にする
と、ポリエチレン製品の厚みによらず、略均一な架橋率
を得ることができ、又濃度を0.1重量%にすると、ポリ
エチレン製品の表面から内部に指数関数的に減衰させる
ことができ、又濃度を1重量%にすると、ポリエチレン
製品の表面から0.3mm以内の層でのみ架橋反応が得ら
れ、この結果ポリエチレン製品の使用目的によって光開
始剤の濃度を適宜選択でき、ポリエチレン製品の表面の
薄い層でのみ高い架橋率を得たいならば、0.1重量%〜
1重量%の高濃度に、又ある深さの全領域で均一な架橋
率を得たいならば、0.01重量%の低濃度を選択し、前
者であれば建築物や自動車の内張りに、後者は風呂マッ
トに最適なるものとなる等その実用的効果甚だ大なるも
のである。
When the concentration of the photoinitiator is 0.01% by weight, a substantially uniform crosslinking rate can be obtained regardless of the thickness of the polyethylene product, and when the concentration is 0.1% by weight, the polyethylene is It can be exponentially attenuated from the surface to the inside of the product, and when the concentration is 1% by weight, the crosslinking reaction can be obtained only in the layer within 0.3 mm from the surface of the polyethylene product, resulting in the use of the polyethylene product. The concentration of the photoinitiator can be appropriately selected according to the purpose, and if it is desired to obtain a high crosslinking rate only in the thin layer on the surface of the polyethylene product, 0.1 wt%
If you want to obtain a high concentration of 1% by weight and a uniform cross-linking rate in the entire area of a certain depth, select a low concentration of 0.01% by weight, and in the former case, for the lining of buildings and automobiles, The latter is the most suitable for bath mats, and its practical effects are enormous.

【図面の簡単な説明】[Brief description of drawings]

【図1】押出成形機の概略断面図である。FIG. 1 is a schematic sectional view of an extruder.

【図2】エキシマレーザーの照射装置を示す図である。FIG. 2 is a diagram showing an irradiation device of an excimer laser.

【図3】MFR法の測定器具を示す図である。FIG. 3 is a diagram showing a measuring instrument of the MFR method.

【図4】MFR法とゲル分率法との関係を示すグラフで
ある。
FIG. 4 is a graph showing the relationship between the MFR method and the gel fraction method.

【図5】ゲル分率法の測定器具を示す図である。FIG. 5 is a view showing a measuring instrument of the gel fraction method.

【図6】ボリエチレン製品厚さとMFR比との関係を示
すグラフである。
FIG. 6 is a graph showing the relationship between polyethylene product thickness and MFR ratio.

【図7】MFR比に及ぼすベンゾフェノン、4ークロロ
ベンゾフェノンの濃度の効果関係を示すグラフである。
FIG. 7 is a graph showing the effect relationship of the concentration of benzophenone and 4-chlorobenzophenone on the MFR ratio.

【図8】エキシマレーザー光波長とーlog(ΔMF
R)との関係を示すグラフである。
FIG. 8: Excimer laser light wavelength and −log (ΔMF
It is a graph which shows the relationship with R).

【図9】ベンゾフェノン、ベンゾフェノンを0.1重量%
添加した厚さ0.3mmのポリエチレン製品および厚さ0.
3mmの純ポリエチレン製品の紫外線吸収スペクトルで
ある。
FIG. 9: Benzophenone, 0.1% by weight of benzophenone
Added 0.3 mm thick polyethylene product and thickness of 0.3 mm.
It is an ultraviolet absorption spectrum of a 3 mm pure polyethylene product.

【符号の説明】[Explanation of symbols]

1 押出成形機 W ポリエチレン製品 1 Extruder W Polyethylene products

───────────────────────────────────────────────────── フロントページの続き (72)発明者 酒井 清章 福井県福井市二の宮3ー17ー14 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Kiyoaki Sakai 3-17-14 Ninomiya, Fukui City, Fukui Prefecture

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ポリエチレン原料にベンゾフェノン、4
ークロロベンゾフェノン等のベンゾフェノン系の光開始
剤を所定濃度で添加し、押出成形機によりシート状また
は発泡状のポリエチレン製品となし、該ポリエチレン製
品にエキシマレーザーを照射したことを特徴とするエキ
シマレーザーによるポリエチレン製品の光架橋。
1. A polyethylene raw material is benzophenone, 4
-A benzophenone-based photoinitiator such as chlorobenzophenone was added at a predetermined concentration to form a sheet-shaped or foamed polyethylene product by an extruder, and the polyethylene product was irradiated with an excimer laser. Photocrosslinking of polyethylene products.
【請求項2】 光開始剤の濃度を0.01重量%〜1重量
%となしたことを特徴とする請求項1記載のエキシマレ
ーザーによるポリエチレン製品の光架橋。
2. The photo-crosslinking of a polyethylene product with an excimer laser according to claim 1, wherein the concentration of the photoinitiator is 0.01% by weight to 1% by weight.
JP34252893A 1993-12-13 1993-12-13 Photo-crosslinking of polyethylene product by excimer laser Pending JPH07165934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34252893A JPH07165934A (en) 1993-12-13 1993-12-13 Photo-crosslinking of polyethylene product by excimer laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34252893A JPH07165934A (en) 1993-12-13 1993-12-13 Photo-crosslinking of polyethylene product by excimer laser

Publications (1)

Publication Number Publication Date
JPH07165934A true JPH07165934A (en) 1995-06-27

Family

ID=18354450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34252893A Pending JPH07165934A (en) 1993-12-13 1993-12-13 Photo-crosslinking of polyethylene product by excimer laser

Country Status (1)

Country Link
JP (1) JPH07165934A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997040090A3 (en) * 1996-04-19 1997-11-27 Minnesota Mining & Mfg Process for radiation cross-linking polymers and radiation cross-linkable compositions
WO2018099586A1 (en) * 2016-11-29 2018-06-07 Rehau Ag + Co Method for producing a polymeric profile by means of chemical cross-linking

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997040090A3 (en) * 1996-04-19 1997-11-27 Minnesota Mining & Mfg Process for radiation cross-linking polymers and radiation cross-linkable compositions
WO2018099586A1 (en) * 2016-11-29 2018-06-07 Rehau Ag + Co Method for producing a polymeric profile by means of chemical cross-linking

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