JPH0717780A - Method for producing porous ceramic film - Google Patents
Method for producing porous ceramic filmInfo
- Publication number
- JPH0717780A JPH0717780A JP19072193A JP19072193A JPH0717780A JP H0717780 A JPH0717780 A JP H0717780A JP 19072193 A JP19072193 A JP 19072193A JP 19072193 A JP19072193 A JP 19072193A JP H0717780 A JPH0717780 A JP H0717780A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- porous
- porous ceramic
- pores
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000011148 porous material Substances 0.000 claims abstract description 67
- 239000007789 gas Substances 0.000 claims abstract description 60
- 238000005530 etching Methods 0.000 claims abstract description 26
- 150000004703 alkoxides Chemical class 0.000 claims abstract description 21
- 239000002131 composite material Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 20
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 4
- 239000002585 base Substances 0.000 claims description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 9
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 7
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 238000003682 fluorination reaction Methods 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 27
- 238000000926 separation method Methods 0.000 abstract description 23
- 239000002253 acid Substances 0.000 abstract description 17
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 15
- 239000000758 substrate Substances 0.000 abstract description 13
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 12
- 239000010408 film Substances 0.000 description 58
- 239000005373 porous glass Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 239000011734 sodium Substances 0.000 description 10
- 238000011144 upstream manufacturing Methods 0.000 description 10
- 238000005191 phase separation Methods 0.000 description 9
- 229910010413 TiO 2 Inorganic materials 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000003980 solgel method Methods 0.000 description 5
- 239000003513 alkali Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- -1 Si into a sol state Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4582—Porous coatings, e.g. coating containing porous fillers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
- C04B2111/00267—Materials permeable to vapours or gases
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00793—Uses not provided for elsewhere in C04B2111/00 as filters or diaphragms
- C04B2111/00801—Membranes; Diaphragms
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Abstract
(57)【要約】
【目的】 ガス分離膜として圧力損失が小さく且つガス
分離効率に優れた多孔質セラミックス膜を、短時間で簡
単且つ容易に製造する方法を提供する。
【構成】 Si等のアルコキシド、B等のアルコキシ
ド、酸素ガスを原料ガスとするCVD法により、多孔質
セラミックス焼結体からなる基材上に400〜1200
℃の温度でSiO2−B2O3等の複合酸化物膜を形成
し、この複合酸化物膜を耐酸性の差を利用してHCl又
はHFの蒸気を用いてエッチング処理することによりB
2O3等の特定酸化物のみを除去する。この方法により、
B2O3等の特定酸化物の除去された跡に形成された細孔
は、基材との接合面から他方の膜表面までほぼ直線状に
連通したナノメーターサイズの均一な孔径を有する。
(57) [Summary] [PROBLEMS] To provide a method for easily and easily producing a porous ceramic membrane having a small pressure loss and an excellent gas separation efficiency as a gas separation membrane in a short time. [Structure] 400-1200 on a substrate made of a porous ceramics sintered body by a CVD method using alkoxides such as Si, alkoxides such as B, and oxygen gas as a source gas.
By forming a composite oxide film such as SiO 2 —B 2 O 3 at a temperature of ℃, and etching the composite oxide film with vapor of HCl or HF by utilizing the difference in acid resistance,
Only specific oxides such as 2 O 3 are removed. By this method,
The pores formed in the trace after the removal of the specific oxide such as B 2 O 3 have a uniform pore size of nanometer size, which communicates in a substantially linear manner from the bonding surface with the base material to the surface of the other film.
Description
【0001】[0001]
【産業上の利用分野】本発明は、ガス分離膜として有用
なナノメーターサイズの細孔を有する多孔質セラミック
ス膜の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a porous ceramic membrane having nanometer-sized pores useful as a gas separation membrane.
【0002】[0002]
【従来の技術】近年、地球温暖化現象が問題となるにつ
れ、その元凶とされるCO2ガスの排出規制が厳しくな
り、火力発電所等では燃焼後の排ガスからCO2を分離
する技術が必要となってきている。このようなガス分離
には、特定のガス分子のみを通過させるために、ナノメ
ーターサイズの孔径の細孔を有する多孔質膜が必要とさ
れている。2. Description of the Related Art In recent years, as the global warming phenomenon has become a problem, the emission control of CO 2 gas, which is the main cause of the global warming phenomenon, has become stricter, and a technology for separating CO 2 from exhaust gas after combustion is required in a thermal power plant or the like. Is becoming. For such gas separation, a porous membrane having pores of nanometer size is required to allow only specific gas molecules to pass through.
【0003】ナノメーターサイズの孔径の細孔を有する
多孔質材料としては、多孔質ガラスが良く知られてい
る。多孔質ガラスは、分相法又はゾルゲル法によって合
成されている。即ち、分相法では、ホウケイ酸ソーダガ
ラスを熱処理によりSiO2に富む相とNa2O・B2O3
に富む相に分相させた後、酸又はアルカリ水溶液で処理
してNa2O・B2O3に富む相を溶出することにより、多
孔質の石英ガラスが得られる。又、ゾルゲル法によって
も、Si等の各種金属のアルコキシドの溶液を加水分解
してゾル状態とし、これを基板等に塗布して乾燥ゲル化
することで、多孔質ガラスを合成することが出来る。Porous glass is well known as a porous material having pores of nanometer size. Porous glass is synthesized by a phase separation method or a sol-gel method. That is, in the phase separation method, the sodium borosilicate glass is heat treated to form a SiO 2 -rich phase and Na 2 O.B 2 O 3
After separating into a phase rich in Na 2 O and treating with an acid or alkali aqueous solution to elute the phase rich in Na 2 O.B 2 O 3 , porous quartz glass is obtained. Also by the sol-gel method, a porous glass can be synthesized by hydrolyzing a solution of an alkoxide of various metals such as Si into a sol state, coating the solution on a substrate or the like, and drying and gelling the solution.
【0004】しかし、このようにして合成された多孔質
ガラスでは、その細孔をナノメーターサイズにすること
が出来るものの、図2に示すごとく、ガラス骨格2中に
存在する細孔1が方向性に乏しいため、ガス分離膜とし
て用いた場合にはガス通過時の圧力損失が大きくなり、
分離処理量が小さいという問題があった。又、細孔1の
方向性が乏しいので、被分離ガス中に少量の浮遊微粒子
が存在すると目詰まりが生じ、フィルター機能を十分に
発揮できないという欠点があった。However, although the pores of the porous glass synthesized in this manner can be made to have a size of nanometer, the pores 1 existing in the glass skeleton 2 are directional as shown in FIG. When used as a gas separation membrane, the pressure loss when passing through the gas increases,
There is a problem that the amount of separation processing is small. Further, since the pores 1 have a poor directionality, if a small amount of suspended fine particles are present in the gas to be separated, clogging occurs and the filter function cannot be sufficiently exhibited.
【0005】更に、多孔質ガラスをガス分離に用いるた
めには薄膜化する必要があるが、分相法では薄膜化が困
難であるため、この点からも分相法による多孔質ガラス
ではガス通過時の圧力損失が一層大きくなる欠点があっ
た。一方、ゾルゲル法では膜厚の均一化が難しいため、
ゾルゲル法による多孔質ガラスをガス分離膜とした場合
には、圧力損失値の制御が極めて困難であった。Further, in order to use the porous glass for gas separation, it is necessary to make it into a thin film, but it is difficult to make it into a thin film by the phase separation method. From this point as well, the porous glass by the phase separation method can pass through the gas. There was a drawback that the pressure loss at that time became larger. On the other hand, since it is difficult to make the film thickness uniform in the sol-gel method,
When the porous glass obtained by the sol-gel method was used as the gas separation membrane, it was extremely difficult to control the pressure loss value.
【0006】又、多孔質ガラスは製造に非常に長時間を
要する欠点がある。即ち、分相法ではガラスを分相させ
るために長時間の加熱が必要であり、その後の酸又はア
ルカリ水溶液でのエッチング処理にも長時間を要してい
た。例えば、HCl水溶液を用いてエッチングすること
が多いが、100℃以上に加熱することはできないの
で、一般に24時間以上の処理時間が必要であった。一
方、ゾルゲル法では調整後のゾルに基板を浸漬しては引
き上げるというプロセスを繰り返すうえ、基板に塗布し
たゾルの乾燥工程に長時間を要していた。このように、
多孔質ガラスは製造が容易ではなく、ガス分離膜として
のコストが高くなる欠点があった。Further, the porous glass has a drawback that it takes a very long time to manufacture. That is, in the phase separation method, heating for a long time is required to separate the glass, and a long time is required for the subsequent etching treatment with an acid or alkali aqueous solution. For example, etching is often performed using an aqueous HCl solution, but since it cannot be heated to 100 ° C. or higher, a processing time of 24 hours or more is generally required. On the other hand, in the sol-gel method, the process of immersing the substrate in the sol after adjustment and then pulling it up is repeated, and it takes a long time to dry the sol applied to the substrate. in this way,
Porous glass is not easy to manufacture and has a drawback that the cost of the gas separation membrane is high.
【0007】このような問題点の外、ガス分離膜として
高い分離効率を達成するためには、ナノメーターサイズ
の細孔の孔径が均一であることが好ましいが、多孔質ガ
ラスでは均一な孔径の細孔を形成することが困難であっ
た。即ち、細孔形成のためのエッチング処理には一般に
酸又はアルカリの水溶液が使用されるが、かかる水溶液
のエッチングでは水分子の狭い間隙への侵入が困難であ
るため、特に平均孔径が2ナノメートル(nm)以下に
なると均一な孔径の多孔質ガラスを得ることができなか
った。In addition to these problems, in order to achieve high separation efficiency as a gas separation membrane, it is preferable that the pore size of nanometer-sized pores be uniform, but porous glass has a uniform pore size. It was difficult to form pores. That is, an aqueous solution of acid or alkali is generally used for the etching treatment for forming pores, but since it is difficult for water molecules to penetrate into narrow gaps in etching of such an aqueous solution, the average pore diameter is particularly 2 nm. If it was less than (nm), it was not possible to obtain a porous glass having a uniform pore size.
【0008】[0008]
【発明が解決しようとする課題】本発明は、かかる従来
の事情に鑑み、膜厚が均一であって、ナノメーターサイ
ズの均一な孔径の細孔を有し、圧力損失が小さく且つ目
詰まりが少ないガス分離膜として有用な多孔質セラミッ
クス膜を、短時間で簡単且つ容易に製造する方法を提供
することを目的とする。In view of such conventional circumstances, the present invention has a uniform film thickness, has pores of uniform nanometer size, has a small pressure loss, and is free from clogging. An object of the present invention is to provide a method for easily and easily producing a porous ceramic membrane useful as a small gas separation membrane in a short time.
【0009】[0009]
【課題を解決するための手段】上記目的を達成するた
め、本発明が提供する多孔質セラミックス膜の製造方法
は、Si、Zr、Ti、Hf、Pb及びAlからなる群
から選ばれた少なくとも1種の元素のアルコキシドと、
B、アルカリ金属及びアルカリ土類金属からなる群から
選ばれた少なくとも1種の元素のアルコキシドと、酸素
ガスとを原料ガスとして用いるCVD法により、連通気
孔を有する多孔質セラミックス焼結体からなる基材上に
400〜1200℃の温度で両群の元素の複合酸化物膜
を形成し、この複合酸化物膜を塩化水素又はフッ化水素
の蒸気を用いてエッチング処理することにより、前記
B、アルカリ金属又はアルカリ土類金属の酸化物のみを
除去することを特徴とする。In order to achieve the above object, the method for producing a porous ceramic film provided by the present invention comprises at least one selected from the group consisting of Si, Zr, Ti, Hf, Pb and Al. Alkoxides of seed elements,
B, a base made of a porous ceramics sintered body having continuous ventilation holes by a CVD method using an alkoxide of at least one element selected from the group consisting of alkali metals and alkaline earth metals and oxygen gas as raw material gases. By forming a composite oxide film of the elements of both groups on the material at a temperature of 400 to 1200 ° C. and subjecting the composite oxide film to an etching treatment using vapor of hydrogen chloride or hydrogen fluoride, the B, alkali It is characterized in that only oxides of metals or alkaline earth metals are removed.
【0010】尚、基材となる多孔質セラミックス焼結体
は既に公知であり、濾過材、担体、センサー等として利
用されている。本来、セラミックス焼結体は粉末を焼結
したものであるから数μm程度の孔径の気孔が多数存在
するが、この孔径を圧粉体の充填率や焼結条件等により
制御して気孔を積極的に形成させたものが多孔質セラミ
ックス焼結体である。ただし、本発明ではガス分離を目
的とするので、多孔質セラミックス焼結体のうち連通気
孔のものを使用する。A porous ceramics sintered body as a base material is already known and is used as a filter material, a carrier, a sensor and the like. Originally, since the ceramics sintered body is obtained by sintering powder, there are a large number of pores having a diameter of about several μm. However, the pore diameter is controlled by the filling rate of the green compact, the sintering conditions, etc. The porous ceramics sintered body is formed as a result. However, since the purpose of the present invention is gas separation, a porous ceramic sintered body having a continuous ventilation hole is used.
【0011】[0011]
【作用】圧力損失の小さいガス分離膜を得るには、膜中
に存在する細孔に方向性を持たせる必要がある。本発明
者らは、この様な方向性を持った細孔を形成する方法を
研究した結果、2種以上の金属アルコキシドを原料ガス
としたCVD法(化学気相合成法)により基材上に複合
酸化物膜を形成し、複合酸化物膜中の各酸化物の耐酸性
の差を利用して特定酸化物のみをHCl又はHFの蒸気
でエッチング除去することによって、残った酸化物から
なる膜中に方向性を持った細孔を形成し得ることを見い
だし、本発明に至ったものである。In order to obtain a gas separation membrane with a small pressure loss, it is necessary to make the pores present in the membrane directional. As a result of researching a method for forming pores having such a directionality, the present inventors have found that a CVD method (chemical vapor deposition method) using two or more kinds of metal alkoxide as a source gas is used to form a substrate. A film formed of a remaining oxide by forming a complex oxide film and etching away only a specific oxide with vapor of HCl or HF by utilizing the difference in acid resistance of each oxide in the complex oxide film. The inventors have found that directional pores can be formed therein, and have reached the present invention.
【0012】尚、CVD法そのものは公知であり、金属
アルコキシドを用いたCVD法による酸化物膜の形成も
半導体素子製造過程におけるSiO2等の絶縁膜の形成
等に使用されている。しかし、半導体分野における酸化
膜はSiO2等の単一酸化物が多く、BやP等の元素を
微量にドーピングする場合もあるが、これは膜表面の平
滑性や膜強度を改善するために過ぎない。これに対して
本発明方法は、CVD法により2種類の酸化物が互いに
多量に複合したマクロな複合組織を形成し、その複合酸
化物のうちの特定酸化物のみをエッチング除去するもの
である。The CVD method itself is known, and the formation of an oxide film by the CVD method using a metal alkoxide is also used for the formation of an insulating film such as SiO 2 in the process of manufacturing a semiconductor device. However, oxide films in the field of semiconductors are often single oxides such as SiO 2 and may be doped with a small amount of elements such as B and P in order to improve the smoothness of the film surface and the film strength. Not too much. On the other hand, the method of the present invention forms a macroscopic composite structure in which a large amount of two kinds of oxides are combined with each other by the CVD method, and only the specific oxide of the composite oxides is removed by etching.
【0013】即ち、本発明の2種以上の金属アルコキシ
ドを原料ガスとしたCVD法によれば、基材上に形成さ
れる複合酸化物中の各酸化物相が、ナノメーターのオー
ダーで微細に混合された疑似分相状態になる。しかも、
複合酸化物膜を形成するための基材の温度を400℃以
上にすることによって、各酸化物相を膜厚方向に伸長し
た柱状組織とすることが出来るので、その中の特定酸化
物のみをエッチング除去した跡に膜厚方向に直線状に伸
びた方向性を有する細孔が得られる。ただし、基材の温
度が1200℃を越えると、成膜されずに粉末状物質が
生成するようになるので、1200℃以下の温度とする
ことが好ましい。That is, according to the CVD method using two or more kinds of metal alkoxides of the present invention as the source gas, each oxide phase in the complex oxide formed on the substrate is finely divided into the order of nanometers. It becomes a mixed pseudo-phase separation state. Moreover,
By setting the temperature of the base material for forming the composite oxide film to 400 ° C. or higher, each oxide phase can have a columnar structure elongated in the film thickness direction. Pores having a directivity extending linearly in the film thickness direction are obtained after the etching removal. However, when the temperature of the base material exceeds 1200 ° C., a powdery substance is generated without being formed into a film, so it is preferable to set the temperature to 1200 ° C. or lower.
【0014】複合酸化物中の耐酸性に劣る特定酸化物の
みを除去するエッチング処理には、HCl又はHFの蒸
気を使用する。特に、HFは腐食性が高いので、エッチ
ング時間を短くすることができる。エッチング温度、即
ちHCl又はHFの蒸気の温度は、複合酸化物の組成や
細孔の孔径等によって変化するが、エッチング時間を短
くするためには100℃以上とすることが好ましい。蒸
気の温度を高くすることによりエッチング速度が速ま
り、酸の水溶液によるエッチングに比べて遥かに短時間
でエッチングを完了することができるが、400℃を越
える高温は避けるべきである。Vapor of HCl or HF is used for the etching treatment for removing only the specific oxide having poor acid resistance in the complex oxide. In particular, since HF is highly corrosive, the etching time can be shortened. The etching temperature, that is, the temperature of the vapor of HCl or HF varies depending on the composition of the composite oxide, the pore size of the pores, etc., but is preferably 100 ° C. or higher in order to shorten the etching time. By increasing the temperature of the vapor, the etching rate is increased, and the etching can be completed in a much shorter time compared with the etching using the acid aqueous solution, but a temperature higher than 400 ° C. should be avoided.
【0015】又、蒸気によるエッチングであるため、狭
い間隙への侵入が容易であるから、極めて微細な細孔を
形成することができ、平均孔径が2nm以下であっても
均一な孔径の細孔を得ることができる。しかも、エッチ
ングにHCl又はHFの蒸気を用いることによって、C
VD法による複合酸化物の形成工程とエッチング処理工
程とを、同じ反応容器中で実施することができるから、
製造工程が簡単になり且つまた短時間で能率的な処理が
可能となる。Further, since the etching is performed by vapor, it is easy to penetrate into a narrow gap, so that extremely fine pores can be formed, and even if the average pore diameter is 2 nm or less, the pores having a uniform pore diameter are formed. Can be obtained. Moreover, by using HCl or HF vapor for etching, C
Since the complex oxide forming step by the VD method and the etching treatment step can be carried out in the same reaction vessel,
The manufacturing process is simplified and efficient processing is possible in a short time.
【0016】かかる本発明方法によれば、除去されるべ
き特定酸化物が方向性を持ち、且つナノメーターのオー
ダーで複合酸化物中に微細に混合された疑似分相状態で
存在するので、これが除去されて形成される細孔の孔径
をナノメートル(nm=10-9m)のオーダーに制御で
きるうえ、殆ど全ての細孔に方向性を持たせることが可
能である。従って、本発明方法により得られる多孔質セ
ラミックス膜は、基材との接合面から他方の膜表面まで
ほぼ直線状に連通した均一なナノメーターサイズの孔径
の細孔を有し、従ってこれをガス分離膜として使用する
と圧力損失が小さく、高能率なガス分離が可能である。According to the method of the present invention, since the specific oxide to be removed has a directionality and exists in a finely divided pseudo-phase state in the composite oxide on the order of nanometers, it is present. It is possible to control the pore size of the pores formed by removal to the order of nanometer (nm = 10 −9 m) and to give directionality to almost all the pores. Therefore, the porous ceramic membrane obtained by the method of the present invention has pores of uniform nanometer-sized pores which are communicated in a substantially linear manner from the joint surface with the base material to the surface of the other membrane. When used as a separation membrane, pressure loss is small and highly efficient gas separation is possible.
【0017】基材とする公知の多孔質セラミックス焼結
体の気孔は、本発明の多孔質セラミックス膜に比べて遥
かに大きいので、基材による圧力損失は殆ど無視するこ
とが出来る。しかも、CVD法で形成された多孔質セラ
ミックス膜は基材に接合しているので、機械的強度に優
れている。又、CVD法により基材の形状に沿って均一
な膜厚の複合酸化物膜を成膜できるので、得られる多孔
質セラミックス膜は膜厚が均一であるうえ、形状的にも
平板状のものに限られず、基材の形状を選ぶだけで曲面
状や円筒状等の各種の任意の形状の多孔質セラミックス
膜を得ることが可能である。Since the pores of the known porous ceramics sintered body as the base material are much larger than those of the porous ceramics film of the present invention, the pressure loss due to the base material can be almost ignored. Moreover, since the porous ceramic film formed by the CVD method is bonded to the base material, it has excellent mechanical strength. Further, since the composite oxide film having a uniform film thickness can be formed along the shape of the substrate by the CVD method, the obtained porous ceramic film has a uniform film thickness and a flat plate shape. However, it is possible to obtain a porous ceramics film having various shapes such as a curved surface and a cylindrical shape by simply selecting the shape of the base material.
【0018】複合酸化物膜から特定の酸化物のみをHC
l又はHFの蒸気によりエッチング除去するためには、
複合酸化物を構成する2種以上の酸化物の耐酸性の差が
大きいほど好ましい。この様な組み合わせとして、耐酸
性に優れた酸化物であるSiO2、ZrO2、TiO2、
HfO2、PbO2又はAl2O3と、耐酸化物に劣る酸化
物であるB2O3や、Li、Na、K等のアルカリ金属及
びMg、Ca、Sr、Ba等のアルカリ土類金属の酸化
物がある。特に、耐酸性に優れているSiO2は、エッ
チング処理後に残って多孔質セラミックス膜を構成する
成分として好ましい。Only specific oxides from the composite oxide film are HC
In order to remove by etching with 1 or HF vapor,
It is preferable that the difference in acid resistance between two or more kinds of oxides constituting the composite oxide is large. As such a combination, SiO 2 , ZrO 2 , TiO 2 , which are oxides excellent in acid resistance,
HfO 2 , PbO 2 or Al 2 O 3 and B 2 O 3 which is an oxide having poor oxide resistance, alkali metals such as Li, Na and K and alkaline earth metals such as Mg, Ca, Sr and Ba. There is an oxide. In particular, SiO 2 having excellent acid resistance is preferable as a component that remains after the etching treatment to form the porous ceramic film.
【0019】従って、本発明におけるCVD法の原料ガ
スとしては、耐酸性に優れた酸化物の原料となるSi、
Zr、Ti、Hf、Pb及びAlからなる群から選ばれ
た少なくとも1種の元素のアルコキシドと、耐酸性に劣
る酸化物の原料となるB、アルカリ金属及びアルカリ土
類金属からなる群から選ばれた少なくとも1種の元素の
アルコキシドとの、2種類の金属アルコキシドが必要で
ある。又、緻密で且つ基材との密着性に優れた多孔質セ
ラミックス膜を得るために、2種類の金属アルコキシド
と共に酸素ガスを用いることが必要である。Therefore, as the raw material gas for the CVD method in the present invention, Si which is a raw material of an oxide having excellent acid resistance,
An alkoxide of at least one element selected from the group consisting of Zr, Ti, Hf, Pb, and Al, and B selected as a raw material of an oxide having poor acid resistance, an alkali metal, and an alkaline earth metal. Also, two kinds of metal alkoxides are necessary, together with at least one kind of elemental alkoxide. In addition, it is necessary to use oxygen gas together with two kinds of metal alkoxides in order to obtain a porous ceramic film that is dense and has excellent adhesion to a substrate.
【0020】これらの原料ガスはAr、He、N2等の
不活性ガスのキャリアガスによって搬送されるが、原料
ガスのうち2種類の金属アルコキシドの流量割合は疑似
分相状態になったそれぞれの酸化物の柱状組織の微細
さ、従って最終的に得られる細孔の孔径を決める上で重
要である。即ち、B、アルカリ金属又はアルカリ土類金
属のアルコキシドの割合を少なくするほど、耐酸性に劣
る酸化物の柱状組織が微細になり且つ得られる細孔の孔
径も小さくなるが、上記アルコキシドの割合が少なすぎ
ると基材との接合面から他方の膜表面まで膜厚方向に連
通した細孔が得られなくなるので注意を要する。These raw material gases are carried by a carrier gas of an inert gas such as Ar, He, N 2, etc., but the flow rate ratios of the two kinds of metal alkoxides among the raw material gases are in the pseudo-phase-separated state. It is important in determining the fineness of the columnar structure of the oxide and thus the pore size of the finally obtained pores. That is, the smaller the proportion of B, the alkali metal or alkaline earth metal alkoxide, the finer the columnar structure of the oxide having poor acid resistance and the smaller the pore size of the obtained pores, but the proportion of the alkoxide is If the amount is too small, it will be impossible to obtain pores that are continuous in the film thickness direction from the bonding surface with the base material to the surface of the other film.
【0021】又、2種類の金属アルコキシドの割合を一
定に保持すれば、耐酸性に優れるものと劣るものの2種
類の酸化物の組成がほぼ一定になるので、得られる細孔
の孔径と気孔率がほぼ一定になる。一方、この割合を途
中で変化させれば、即ち少なくとも片方の金属アルコキ
シドのガス流量を段階的又は連続的に増加又は減少させ
たり、両方のアルコキシドのうち片方の流量を段階的又
は連続的に増加させ且つ他方の流量を段階的又は連続的
に減少させれば、2種類の酸化物の組成が段階的又は連
続的に変化するので、得られる膜の気孔率及び細孔の孔
径を基材との接合面から他方の膜表面まで膜厚方向に沿
って段階的に又は連続的に変えることが可能である。If the ratios of the two kinds of metal alkoxides are kept constant, the compositions of the two kinds of oxides, which are excellent in acid resistance and inferior in acid resistance, become almost constant. Therefore, the pore size and the porosity of the obtained pores. Becomes almost constant. On the other hand, if this ratio is changed on the way, that is, the gas flow rate of at least one metal alkoxide is increased or decreased stepwise or continuously, or the flow rate of one of both alkoxides is increased stepwise or continuously. And the other flow rate is decreased stepwise or continuously, the composition of the two kinds of oxides changes stepwise or continuously, so that the porosity and pore size of the obtained film are different from those of the base material. It is possible to change stepwise or continuously along the film thickness direction from the bonding surface of No. 1 to the other film surface.
【0022】例えば、所定の成膜時間が経過する毎に、
Siのアルコキシドの流量を段階的に増加させ且つBの
アルコキシドの流量を段階的に減少させると、図1に示
すように、膜表面側(図面の上側)になるほどB2O3が
少なくなるようにSiO2とB2O3の組成が段階的に変
化した柱状組織のSiO2−B2O3複合酸化膜が形成さ
れる。従って、この複合酸化膜を例えばHCl蒸気でエ
ッチングすると、酸に弱いB2O3が溶解除去されて、そ
の部分に孔径が段階的に変化した細孔が形成され、従っ
て残ったSiO2からなる多孔質セラミックス膜の気孔
率も当然に段階的に変化したものとなる。For example, every time a predetermined film forming time elapses,
When the flow rate of the Si alkoxide is increased stepwise and the flow rate of the B alkoxide is decreased stepwise, B 2 O 3 becomes smaller toward the film surface side (upper side of the drawing), as shown in FIG. A SiO 2 —B 2 O 3 composite oxide film having a columnar structure in which the composition of SiO 2 and B 2 O 3 is changed stepwise is formed. Therefore, when this composite oxide film is etched with, for example, HCl vapor, B 2 O 3 which is weak against acid is dissolved and removed, and pores having a stepwise change in pore diameter are formed in that portion, and thus the remaining SiO 2 is formed. The porosity of the porous ceramic film naturally changes in a stepwise manner.
【0023】この様な気孔率及び孔径が膜厚方向に傾斜
した多孔質セラミックス膜は、被分離ガスの成分に合わ
せて分離機能を分担化することが出来る。例えば、火力
発電所の排気ガス中には浮遊微粒子が数多く存在してお
り、これがフィルターの目詰まりを生じさせるため、従
来は微粒子を分離するフィルターを特別に設置する必要
があった。ところが、気孔率及び孔径が膜厚方向に傾斜
した多孔質セラミックス膜を使用すれば、細孔の孔径が
大きな部分でまず微粒子を除去し、その後に孔径の小さ
な部分でCO2を分離することができる。Such a porous ceramic film having a porosity and a pore diameter inclined in the film thickness direction can share the separating function according to the components of the gas to be separated. For example, a large number of suspended particulates are present in the exhaust gas of a thermal power plant, and this causes clogging of the filter. Therefore, conventionally, it was necessary to specially install a filter for separating particulates. However, if a porous ceramic film having a porosity and a pore diameter inclined in the film thickness direction is used, fine particles are first removed at a portion having a large pore diameter, and then CO 2 is separated at a portion having a small pore diameter. it can.
【0024】[0024]
【実施例】実施例1 気孔率が40%及び気孔径が約1μmの多孔質アルミナ
焼結体からなり、内径が約10mmで肉厚1mmの一端
を閉塞した有底円筒状の基材を用い、この基材の外側に
CVD法により以下の条件でSiO2−TiO2−Na2
O系複合酸化物膜を膜厚約100μmとなるように成膜
した。 EXAMPLE 1 A bottomed cylindrical base material made of a porous alumina sintered body having a porosity of 40% and a pore diameter of about 1 μm and having an inner diameter of about 10 mm and a wall thickness of 1 mm closed at one end was used. , SiO 2 —TiO 2 —Na 2 on the outside of this substrate by the CVD method under the following conditions.
An O-based composite oxide film was formed to have a film thickness of about 100 μm.
【0025】 ガス流量:Si(OC2H5)4 0.15 l/min Ti(OCH3)3 0.12 l/min Na(OC2H5) 0.07 l/min O2 0.50 l/min Ar 1.20 l/min 温 度:800℃ 圧 力:100TorrGas flow rate: Si (OC 2 H 5 ) 4 0.15 l / min Ti (OCH 3 ) 3 0.12 l / min Na (OC 2 H 5 ) 0.07 l / min O 2 0.50 l / min Ar 1.20 l / min Temperature: 800 ° C Pressure: 100 Torr
【0026】得られたSiO2−TiO2−Na2O系複
合酸化物膜の組成は原子比でSi:Ti:Na=36:
22:42であり、膜全体でほぼ一定であった。この複
合酸化物膜を100%塩化水素(HCl)ガスにより1
50℃で約5分間のエッチング処理を行い、Na2O相
を溶解させて除去することにより、実質的にSiO2−
TiO2からなり、気孔率が約46%であって、平均孔
径が1.5nmの細孔を有する厚さ約100μmの多孔
質セラミックス膜が得られた。The composition of the obtained SiO 2 —TiO 2 —Na 2 O type composite oxide film was Si: Ti: Na = 36: in atomic ratio.
It was 22:42, and was almost constant throughout the film. This composite oxide film was made 1 by 100% hydrogen chloride (HCl) gas.
By performing an etching treatment at 50 ° C. for about 5 minutes to dissolve and remove the Na 2 O phase, SiO 2 − is substantially removed.
A porous ceramic film made of TiO 2 having a porosity of about 46% and having pores with an average pore diameter of 1.5 nm and a thickness of about 100 μm was obtained.
【0027】この基材上に形成された多孔質セラミック
ス膜を有底円筒状のガス分離フィルターとして、図3に
示す装置に多孔質セラミックス膜3を上流側に向けて組
み込んだ。その後、H2:N2を1:1に混合した被分離
ガス5をフィルター上流側に導入し、フィルター下流側
の真空ポンプ6により3kg/cm2の圧力と1.0l/
minの流速で多孔質セラミックス膜3と基材4を通し
て吸引しながら、フィルター上流側の圧力を圧力計7で
測定し、ガス分析装置8によりフィルターを通過したガ
スの組成を測定した。The porous ceramic membrane formed on this substrate was used as a bottomed cylindrical gas separation filter, and the porous ceramic membrane 3 was incorporated into the apparatus shown in FIG. Then, the gas to be separated 5 in which H 2 : N 2 was mixed at a ratio of 1: 1 was introduced to the upstream side of the filter, and a vacuum pump 6 on the downstream side of the filter introduced a pressure of 3 kg / cm 2 and 1.0 l /
While suctioning through the porous ceramics film 3 and the substrate 4 at a flow rate of min, the pressure on the upstream side of the filter was measured by the pressure gauge 7, and the gas analyzer 8 measured the composition of the gas passing through the filter.
【0028】比較のため、通常の分相法で製造した気孔
率が約45%で平均孔径が約1.5nmの多孔質ガラス
(厚さ約100μm)からなる上記と同様の有底円筒状
のフィルターを用意し、図3の装置に上記と同様に組み
込み、上記と同じ条件でフィルター上流側の圧力とフィ
ルターを透過したガスの組成を測定した。これらの測定
結果を表1に示す。For comparison, a bottomed cylindrical shape similar to that described above made of a porous glass (thickness: about 100 μm) having a porosity of about 45% and an average pore diameter of about 1.5 nm, which was manufactured by a normal phase separation method. A filter was prepared and incorporated into the apparatus of FIG. 3 in the same manner as above, and the pressure on the upstream side of the filter and the composition of the gas passing through the filter were measured under the same conditions as above. The results of these measurements are shown in Table 1.
【0029】[0029]
【表1】 [Table 1]
【0030】表1の結果から、本発明の多孔質セラミッ
クス膜は細孔の孔径が均一であるため、ガス分離膜とし
て従来の多孔質ガラス膜より優れたガス分離能を有する
と同時に、従来の多孔質ガラス膜に比べて圧力損失を小
さくできることが判る。From the results shown in Table 1, since the porous ceramic membrane of the present invention has a uniform pore size, it has a gas separation ability superior to that of the conventional porous glass membrane as a gas separation membrane, and at the same time, it is It can be seen that the pressure loss can be made smaller than that of the porous glass membrane.
【0031】実施例2 実施例1と同じ多孔質アルミナ製の有底円筒状の基材を
用い、この基材の外側にCVD法により以下の条件でZ
rO2−TiO2−CaO系複合酸化物膜を膜厚約100
μmとなるように成膜した。 Example 2 The same cylindrical bottomed cylindrical base material made of porous alumina as in Example 1 was used, and Z was formed on the outside of this base material by the CVD method under the following conditions.
The rO 2 —TiO 2 —CaO based composite oxide film was formed to a film thickness of about 100.
The film was formed to have a thickness of μm.
【0032】 ガス流量:Zr(OC2H5)4 0.15 l/min Ti(OCH3)3 0.15 l/min Ca(OC2H5) 0.20 l/min O2 1.20 l/min Ar 1.20 l/min 温 度:700℃ 圧 力:10TorrGas flow rate: Zr (OC 2 H 5 ) 4 0.15 l / min Ti (OCH 3 ) 3 0.15 l / min Ca (OC 2 H 5 ) 0.20 l / min O 2 1.20 l / min Ar 1.20 l / min Temperature: 700 ° C Pressure: 10 Torr
【0033】得られたZrO2−TiO2−CaO系複合
酸化物膜を100%HFの蒸気にさらし、200℃で約
3分間のエッチング処理を行い、CaO相を溶解除去し
た。得られた多孔質セラミックス膜は、実質的にZrO
2−TiO2からなり、気孔率が約38%であって、細孔
の平均孔径は1.8nmであった。The obtained ZrO 2 --TiO 2 --CaO type composite oxide film was exposed to 100% HF vapor and subjected to etching treatment at 200 ° C. for about 3 minutes to dissolve and remove the CaO phase. The obtained porous ceramics film is substantially ZrO 2.
It was composed of 2- TiO 2 , had a porosity of about 38%, and had an average pore diameter of 1.8 nm.
【0034】この基材上に形成された多孔質セラミック
ス膜を有底円筒状のガス分離フィルターとして、実施例
1と同様に図3に示す装置に多孔質セラミックス膜3を
上流側に向けて組み込んだ。次に、H2:N2を1:1に
混合した被分離ガス5をフィルター上流側に供給し、フ
ィルター下流側の真空ポンプ6により上流側のガス圧を
2.5〜5.0kg/cm2の範囲で変えながら20 l/
minの流速でフィルターを通過させ、変化させたフィ
ルター上流側のガス圧毎にフィルターを通過したガスの
組成をガス分析装置8で測定した。The porous ceramics membrane formed on this substrate was used as a bottomed cylindrical gas separation filter, and the porous ceramics membrane 3 was incorporated into the apparatus shown in FIG. It is. Next, the gas to be separated 5 in which H 2 : N 2 was mixed at 1: 1 was supplied to the upstream side of the filter, and the gas pressure on the upstream side was adjusted to 2.5 to 5.0 kg / cm by the vacuum pump 6 on the downstream side of the filter. 20 l / while changing in the range of 2
The composition of the gas passing through the filter was measured by the gas analyzer 8 for each gas pressure on the upstream side of the filter which was passed through the filter at a flow rate of min.
【0035】比較のために、分相法で製造した気孔率が
約39%で平均孔径が約1.8nmの通常の多孔質ガラ
ス(厚さ約100μm)からなる、上記と同様の有底円
筒状のフィルターを用意して図3の装置に同様に組み込
み、上記と同じ条件でフィルター上流側のガス圧力に応
じてフィルターを通過したガスの組成を測定した。これ
らの測定結果を表2に示す。For comparison, a bottomed cylinder similar to the above, which is made of a normal porous glass (thickness: about 100 μm) having a porosity of about 39% and an average pore diameter of about 1.8 nm, manufactured by the phase separation method. A filter of the same shape was prepared and similarly incorporated in the apparatus of FIG. 3, and the composition of the gas passing through the filter was measured according to the gas pressure on the upstream side of the filter under the same conditions as above. The results of these measurements are shown in Table 2.
【0036】[0036]
【表2】 [Table 2]
【0037】表2の結果から判るように、本発明の多孔
質セラミックス膜からなるフィルターでは、上流側のガ
ス圧が変わってもフィルターを透過したガスの組成は殆
ど変わらないのに対して、従来の多孔質ガラスからなる
フィルターでは上流側のガス圧の上昇に伴い、透過ガス
のH2分率が急激に低下した。これは、従来の多孔質ガ
ラスの細孔の孔径分布が広く、比較的大きな孔径のもの
も含まれるので、上流側のガス圧の上昇によりN2ガス
が大きな細孔を通過したためと考えられる。As can be seen from the results of Table 2, in the filter made of the porous ceramic membrane of the present invention, the composition of the gas passing through the filter hardly changes even if the gas pressure on the upstream side changes. In the filter made of the above porous glass, the H 2 fraction of the permeated gas decreased sharply as the gas pressure on the upstream side increased. It is considered that this is because conventional porous glass has a wide pore size distribution of pores and includes a relatively large pore size, and thus N 2 gas has passed through the large pores due to an increase in gas pressure on the upstream side.
【0038】[0038]
【発明の効果】本発明によれば、CVD法で基材上に形
成した複合酸化物中の特定酸化物を耐酸性の差によりH
Cl又はHFの上記でエッツチング除去する方法を用い
て、従来の多孔質ガラスの製造に比べて遥かに短時間で
簡単且つ容易に、膜厚方向に沿いほぼ直線状に連通した
ナノメーターサイズの孔径の細孔を有する多孔質セラミ
ックス膜を、多孔質セラミックス焼結体の基材上に接合
した形で製造することが出来る。According to the present invention, the specific oxide in the complex oxide formed on the base material by the CVD method is converted into H by the difference in acid resistance.
By using the above method of etching removal of Cl or HF, a nanometer-sized pore diameter which is almost linearly communicated along the film thickness direction in a much shorter time and easily and easily as compared with the conventional production of porous glass. It is possible to manufacture the porous ceramics film having the fine pores in the form of being bonded onto the base material of the porous ceramics sintered body.
【0039】この多孔質セラミックス焼結体基材上の多
孔質セラミックス膜は、膜厚が均一でナノメーターサイ
ズの細孔が膜厚方向に沿いほぼ直線状に連通しているの
で、ガス分離膜としてガス透過時の圧力損失が極めて小
さいうえ、細孔の孔径が均一であるから高いガス分離効
率が得られる。更に、細孔の孔径を変化させた多孔質セ
ラミックス膜では、圧力損失が小さいうえに、浮遊微粒
子による目詰まりが少ないという利点を有する。Since the porous ceramics membrane on the porous ceramics sintered body substrate has a uniform thickness and the nanometer-sized pores communicate with each other in a substantially linear manner along the thickness direction, the gas separation membrane is As a result, the pressure loss during gas permeation is extremely small, and since the pore diameters are uniform, high gas separation efficiency can be obtained. Further, the porous ceramic film having different pore diameters has an advantage that the pressure loss is small and the clogging due to the suspended fine particles is small.
【図1】本発明におけるCVD法により形成した複合酸
化物膜を説明するための模式的な断面図である。FIG. 1 is a schematic cross-sectional view for explaining a complex oxide film formed by a CVD method according to the present invention.
【図2】従来の分相法により製造した多孔質ガラスの断
面図である。FIG. 2 is a cross-sectional view of a porous glass manufactured by a conventional phase separation method.
【図3】実施例で用いたガス分離装置の概略断面図であ
る。FIG. 3 is a schematic cross-sectional view of a gas separation device used in an example.
1 細孔 2 ガラス骨格 3 多孔質セラミックス膜 4 基材 5 被分離ガス 6 真空ポンプ 7 圧力計 8 ガス分析装置 DESCRIPTION OF SYMBOLS 1 Pore 2 Glass skeleton 3 Porous ceramic film 4 Base material 5 Gas to be separated 6 Vacuum pump 7 Pressure gauge 8 Gas analyzer
Claims (3)
からなる群から選ばれた少なくとも1種の元素のアルコ
キシドと、B、アルカリ金属及びアルカリ土類金属から
なる群から選ばれた少なくとも1種の元素のアルコキシ
ドと、酸素ガスとを原料ガスとして用いるCVD法によ
り、連通気孔を有する多孔質セラミックス焼結体からな
る基材上に400〜1200℃の温度で両群の元素の複
合酸化物膜を形成し、この複合酸化物膜を塩化水素又は
フッ化水素の蒸気を用いてエッチング処理することによ
り、前記B、アルカリ金属又はアルカリ土類金属の酸化
物のみを除去することを特徴とする多孔質セラミックス
膜の製造方法。1. Si, Zr, Ti, Hf, Pb and Al
CVD using at least one alkoxide of an element selected from the group consisting of B, an alkoxide of at least one element selected from the group consisting of B, an alkali metal and an alkaline earth metal, and oxygen gas as source gases By the method, a composite oxide film of the elements of both groups is formed at a temperature of 400 to 1200 ° C. on a base material made of a porous ceramics sintered body having continuous pores, and the composite oxide film is subjected to hydrogen chloride or fluorination. A method for producing a porous ceramic film, characterized in that only the oxide of B, the alkali metal or the alkaline earth metal is removed by performing an etching treatment using hydrogen vapor.
100〜400℃であることを特徴とする、請求項1記
載の多孔質セラミックス膜の製造方法。2. The method for producing a porous ceramic film according to claim 1, wherein the temperature of the vapor of hydrogen chloride or hydrogen fluoride is 100 to 400 ° C.
グ処理とを、同じ反応容器内で行うことを特徴とする、
請求項1又は2に記載の多孔質セラミックス膜の製造方
法。3. The formation of the complex oxide and the subsequent etching treatment are performed in the same reaction vessel.
The method for producing the porous ceramic film according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19072193A JPH0717780A (en) | 1993-07-02 | 1993-07-02 | Method for producing porous ceramic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19072193A JPH0717780A (en) | 1993-07-02 | 1993-07-02 | Method for producing porous ceramic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0717780A true JPH0717780A (en) | 1995-01-20 |
Family
ID=16262715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19072193A Pending JPH0717780A (en) | 1993-07-02 | 1993-07-02 | Method for producing porous ceramic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0717780A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005254161A (en) * | 2004-03-12 | 2005-09-22 | Shinichi Nakao | Hydrogen separation membrane and its preparation method |
| JP2007176720A (en) * | 2005-12-27 | 2007-07-12 | Mitsubishi Electric Corp | Three-dimensional skeleton structure ceramic porous body and method for producing ceramic porous body |
| JP2010162503A (en) * | 2009-01-16 | 2010-07-29 | Panasonic Electric Works Co Ltd | Manufacturing method of bag-shaped separation membrane, and bag-shaped separation membrane |
| JP2020082011A (en) * | 2018-11-29 | 2020-06-04 | 京セラ株式会社 | Gas separation member and gas separation device |
| CN116785940A (en) * | 2023-06-02 | 2023-09-22 | 广东电网有限责任公司广州供电局 | High-temperature-resistant ceramic separation membrane and preparation and application thereof |
-
1993
- 1993-07-02 JP JP19072193A patent/JPH0717780A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005254161A (en) * | 2004-03-12 | 2005-09-22 | Shinichi Nakao | Hydrogen separation membrane and its preparation method |
| JP2007176720A (en) * | 2005-12-27 | 2007-07-12 | Mitsubishi Electric Corp | Three-dimensional skeleton structure ceramic porous body and method for producing ceramic porous body |
| JP2010162503A (en) * | 2009-01-16 | 2010-07-29 | Panasonic Electric Works Co Ltd | Manufacturing method of bag-shaped separation membrane, and bag-shaped separation membrane |
| JP2020082011A (en) * | 2018-11-29 | 2020-06-04 | 京セラ株式会社 | Gas separation member and gas separation device |
| CN116785940A (en) * | 2023-06-02 | 2023-09-22 | 广东电网有限责任公司广州供电局 | High-temperature-resistant ceramic separation membrane and preparation and application thereof |
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