JPH0719083Y2 - Ion source - Google Patents

Ion source

Info

Publication number
JPH0719083Y2
JPH0719083Y2 JP13706789U JP13706789U JPH0719083Y2 JP H0719083 Y2 JPH0719083 Y2 JP H0719083Y2 JP 13706789 U JP13706789 U JP 13706789U JP 13706789 U JP13706789 U JP 13706789U JP H0719083 Y2 JPH0719083 Y2 JP H0719083Y2
Authority
JP
Japan
Prior art keywords
electrode
ground
flange
negative electrode
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13706789U
Other languages
Japanese (ja)
Other versions
JPH0376355U (en
Inventor
正博 谷井
靖典 安東
英輔 村坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Priority to JP13706789U priority Critical patent/JPH0719083Y2/en
Publication of JPH0376355U publication Critical patent/JPH0376355U/ja
Application granted granted Critical
Publication of JPH0719083Y2 publication Critical patent/JPH0719083Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electron Sources, Ion Sources (AREA)

Description

【考案の詳細な説明】 〔産業上の利用分野〕 この考案は、例えばイオン注入装置等に用いられるイオ
ン源に関し、より具体的には、その引出し電極系の部分
での閃絡を防止する手段に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to an ion source used in, for example, an ion implantation apparatus, and more specifically, a means for preventing flashover in a portion of its extraction electrode system. Regarding

〔従来の技術〕[Conventional technology]

第2図は、イオン源の基本的な構成例を示す概略図であ
る。
FIG. 2 is a schematic diagram showing a basic configuration example of an ion source.

このイオン源は、プラズマ8を作るプラズマソース部2
と、このプラズマソース部2(より具体的にはそこのプ
ラズマ8)から電界の作用でイオンビーム16を引き出す
引出し電極系10とを備えている。
This ion source is a plasma source unit 2 that produces a plasma 8.
And an extraction electrode system 10 for extracting the ion beam 16 from the plasma source portion 2 (more specifically, the plasma 8 there) by the action of an electric field.

プラズマソース部2は、この例では、ガス等のイオン化
物質が導入されるプラズマ生成容器4およびフィラメン
ト6を有しており、両者間のアーク放電によってプラズ
マ8が作られる。
In this example, the plasma source unit 2 has a plasma generation container 4 and a filament 6 into which an ionized substance such as gas is introduced, and a plasma 8 is generated by arc discharge between the two.

引出し電極系10は、この例では、いずれも多孔電極であ
って、正電位にされる正電極12と、その下流側にあって
負電位にされる負電極13と、その下流側にあって接地電
位にされる接地電極14とで構成されている。
In this example, the extraction electrode system 10 is a porous electrode, and is a positive electrode 12 that is set to a positive potential, a negative electrode 13 that is on the downstream side and is set to a negative potential, and that is on the downstream side. It is composed of a ground electrode 14 which is set to the ground potential.

第3図は、第2図のイオン源の引出し電極系10の周りの
具体的な構造の従来例を部分的に示す拡大断面図であ
る。
FIG. 3 is an enlarged sectional view partially showing a conventional example of a specific structure around the extraction electrode system 10 of the ion source of FIG.

筒状の絶縁スペーサ22の両端部に、正の高電圧が印加さ
れる高圧フランジ20および接地電位される接地フランジ
24がそれぞれ設けられている。
A high-voltage flange 20 to which a positive high voltage is applied and a ground flange to be grounded at both ends of the cylindrical insulating spacer 22.
24 are provided respectively.

前記正電極12は、この高圧フランジ20に取り付けられて
おり、この高圧フランジ20を介して正の高電圧が印加さ
れる。
The positive electrode 12 is attached to this high-pressure flange 20, and a positive high voltage is applied via this high-pressure flange 20.

前記接地電極14は、筒状をした金属製の支持枠32によっ
て接地フランジ24から支持されており、これらを介して
接地電位にされる。
The ground electrode 14 is supported from the ground flange 24 by a cylindrical metal support frame 32, and is set to the ground potential via these.

前記負電極13は、例えば、図示しない絶縁物を介して支
持枠32から支持されている。また、接地フランジ24に
は、絶縁筒26aおよび導体26bを有する電流導入端子26が
通されており、それと(より具体的にはその導体26b
と)負電極13とが接続線28によって接続されている。30
は端子である。このような構造で、負電極13に外部から
負電圧が印加される。
The negative electrode 13 is supported by the support frame 32 via an insulator (not shown), for example. In addition, the ground flange 24 is passed through the current introducing terminal 26 having an insulating tube 26a and a conductor 26b, and (and more specifically, the conductor 26b
And) the negative electrode 13 is connected by a connecting line 28. 30
Is a terminal. With such a structure, a negative voltage is externally applied to the negative electrode 13.

〔考案が解決しようとする課題〕[Problems to be solved by the device]

上記のようなイオン源においては、高圧フランジ20を接
地フランジ24との間に高電圧(例えば、数十KV〜百KV程
度)が印加されるが、その間の高電位部分に対して接続
線28が露出しているため、そことこの接続線28との間で
閃絡が起こり、これが引き金となって高圧フランジ20付
近と接地フランジ24付近との間で閃絡が起こる危険性が
高いという問題がある。ちなみに、そのような閃絡が起
これば、当該イオン源の安定動作が阻害される。
In the ion source as described above, a high voltage (for example, about several tens KV to 100 KV) is applied between the high-pressure flange 20 and the ground flange 24, and the connecting line 28 is applied to the high-potential portion between them. Is exposed, there is a flashover between it and this connection line 28, which triggers a high flashover between the high pressure flange 20 and the grounding flange 24. There is. By the way, if such a flashover occurs, the stable operation of the ion source is hindered.

これに対しては、接続線28を例えばセラミックス製の絶
縁管内に通してカバーする考えもあるが、そのようにし
ても、接続線28の曲げ部には絶縁管の継目ができ、そこ
から接続線28が露出するため、その部分から前述した閃
絡が起こる危険性が高く、これを完全に防止することは
できない。
On the other hand, there is an idea to cover the connecting wire 28 by passing it through, for example, an insulating tube made of ceramics, but even in that case, a joint of the insulating tube is formed at the bent portion of the connecting wire 28, and the connection is made from there. Since the line 28 is exposed, there is a high risk that the flashover mentioned above will occur from that part, and this cannot be completely prevented.

特に、上記のような閃絡の危険性は、高圧フランジ20と
接地フランジ24との間に印加する電圧が高くなるほど大
きくなる。
In particular, the risk of flashover as described above increases as the voltage applied between the high-pressure flange 20 and the ground flange 24 increases.

そこでこの考案は、引出し電極系の部分において上記の
ような閃絡の起こる危険性がなくなるようにしたイオン
源を提供することを主たる目的とする。
Therefore, the main object of the present invention is to provide an ion source which eliminates the above-mentioned risk of flashover in the extraction electrode system.

〔課題を解決するための手段〕[Means for Solving the Problems]

上記目的を達成するため、この考案のイオン源は、前述
したような支持枠の側壁部内に絶縁管を通し、この絶縁
管内に前記接続線を通し、かつ前記負電極の周縁部に、
少なくとも同負電極と前記接続線との接続部の近傍を覆
う金属製のカバーを取り付けていることを特徴とする。
In order to achieve the above object, the ion source of the present invention is such that an insulating tube is passed through a side wall portion of a support frame as described above, the connecting wire is passed through the insulating tube, and a peripheral portion of the negative electrode is provided.
It is characterized in that a metal cover is attached to cover at least the vicinity of the connection portion between the negative electrode and the connection line.

〔作用〕[Action]

上記構造によれば、高圧フランジ付近と接地フランジ付
近との間の高電位部分に対して、負電極に負電圧を印加
するための接続線やそれと他の物との接続部が露出しな
くなる。
According to the above structure, the connection line for applying a negative voltage to the negative electrode and the connection portion between the high voltage flange and the ground flange and the other parts are not exposed in the high potential portion.

その結果、当該高電位部分と接続線等との間で、ひいて
は両フランジ付近間で、閃絡が起こる危険性がなくな
る。
As a result, there is no risk of flashover between the high-potential portion and the connecting wire or the like, and thus between both flanges.

〔実施例〕〔Example〕

第1図は、この考案に係るイオン源の引出し電極系周り
の具体的な構造の例を部分的に示す拡大断面図である。
第2図および第3図の例と同一または相当する部分には
同一符号を付し、以下においては従来例との相違点を主
に説明する。
FIG. 1 is an enlarged sectional view partially showing an example of a specific structure around the extraction electrode system of the ion source according to the present invention.
The same or corresponding parts as those in the examples of FIGS. 2 and 3 are designated by the same reference numerals, and the differences from the conventional example will be mainly described below.

この実施例においては、前述したような接地電極14を支
持する支持枠32の側壁部32aの厚みを大きくして、その
長手方向に、例えばセラミックスから成る絶縁管34を、
その両端部が同側壁部32aからある程度露出するように
貫通させている。
In this embodiment, the thickness of the side wall portion 32a of the support frame 32 that supports the ground electrode 14 as described above is increased, and the insulating tube 34 made of, for example, ceramics is provided in the longitudinal direction thereof.
Both ends thereof are penetrated so as to be exposed from the side wall portion 32a to some extent.

この支持枠32の側壁部32aは、その付近の電界分布を乱
さないようにする観点から、全周を一様に厚くするのが
好ましい。
The side wall portion 32a of the support frame 32 preferably has a uniform thickness over the entire circumference from the viewpoint of not disturbing the electric field distribution in the vicinity thereof.

また、この支持枠32と接地フランジ24との取付け部より
も下流側(イオンビーム16の引出し方向に見て)に、前
述した電流導入端子26を配置している。
Further, the current introducing terminal 26 described above is arranged on the downstream side (as viewed in the extraction direction of the ion beam 16) from the mounting portion of the support frame 32 and the grounding flange 24.

そして、この電流導入端子26(より具体的にはその導体
26b)と負電極13(より具体的にはそれに取り付けた端
子30)とを接続する接続線28を、上記絶縁管34内を通し
ている。
The current introducing terminal 26 (more specifically, the conductor
26b) and the negative electrode 13 (more specifically, the terminal 30 attached to the negative electrode 13) are connected to each other through a connecting wire 28 which passes through the insulating tube 34.

また、負電極13の周縁部に、少なくとも同負電極13と接
続線28との接続部の近傍を覆う金属製のカバー36を取り
付けている。
Further, a metal cover 36 is attached to the peripheral portion of the negative electrode 13 so as to cover at least the vicinity of the connecting portion between the negative electrode 13 and the connecting wire 28.

このカバー36は、その付近の電界分布を乱さないように
する観点から、負電極13の全周に亘って設けるのが好ま
しい。
The cover 36 is preferably provided over the entire circumference of the negative electrode 13 from the viewpoint of not disturbing the electric field distribution in the vicinity thereof.

更にこの実施例では、電流導入端子26と接続線28との接
続部の近傍がイオンビーム16側に露出しないように、例
えば支持枠32の下端部に取り付けられていて接地電位に
される金属製のカバー38で覆っている。
Further, in this embodiment, for example, a metal that is attached to the lower end of the support frame 32 and is set to the ground potential so that the vicinity of the connection portion between the current introduction terminal 26 and the connection line 28 is not exposed to the ion beam 16 side. It is covered with a cover 38.

このカバー38も、その付近の電界分布を乱さないように
する観点から、支持枠32に沿って全周に設けるのが好ま
しい。
The cover 38 is also preferably provided on the entire circumference along the support frame 32 from the viewpoint of not disturbing the electric field distribution in the vicinity thereof.

上記構造によれば、高圧フランジ20付近と接地フランジ
24付近との間の高電位部分に対して、接続線28やそれと
他の物(負電極13および電流導入端子26)との接続部が
全く露出しなくなる。
According to the above structure, the high pressure flange 20 and the ground flange
The connection line 28 and the connection between the connection line 28 and other objects (the negative electrode 13 and the current introduction terminal 26) are not exposed at all in the high potential portion between the vicinity of 24.

その結果、当該高電位部分と接続線28等との間で、ひい
ては両フランジ付近間で、閃絡が起こる危険性がなくな
る。従って、当該イオン源の動作の安定性が向上する。
As a result, there is no risk of flashover between the high-potential portion and the connection line 28 or the like, and in the vicinity of both flanges. Therefore, the stability of the operation of the ion source is improved.

また、上記カバー38を設けることは上記のような閃絡防
止上は必須ではないけれども、この実施例のようにそれ
を設ければ、イオンビーム16に対して負電位部分が露出
しなくなるので、イオンビーム16が負電位部分に部分的
に引かれてその均一性が悪化するというような心配がな
くなる。
Further, the provision of the cover 38 is not essential for preventing flashover as described above, but if it is provided as in this embodiment, the negative potential portion is not exposed to the ion beam 16, There is no concern that the ion beam 16 will be partially attracted to the negative potential portion and its uniformity will be deteriorated.

なお、引出し電極系10の上記のような電極構成は一例で
あり、それ以外の電極構成も採り得る。例えば、上記正
電極12とプラズマソース部2との間に更に他の正電極を
設け、この正電極と上記正電極12との間でイオンビーム
16の引出し部を構成し、正電極12と接地電極14との間で
同イオンビーム16の加速部を構成することで、いわゆる
2段加速構造にしても良い。
Note that the above-described electrode configuration of the extraction electrode system 10 is an example, and other electrode configurations can be adopted. For example, another positive electrode is provided between the positive electrode 12 and the plasma source unit 2, and an ion beam is provided between the positive electrode and the positive electrode 12.
A so-called two-stage accelerating structure may be formed by constructing the extraction portion of 16 and accelerating the ion beam 16 between the positive electrode 12 and the ground electrode 14.

〔考案の効果〕[Effect of device]

以上のようにこの考案によれば、高圧フランジ付近と接
地フランジ付近との間の高電位部分に対して、負電極に
負電圧を印加する接続線やそれと他の物との接続部が露
出しなくなるので、当該高電位部分と接続線等との間
で、ひいては両フランジ付近間で、閃絡が起こる危険性
がなくなる。その結果、当該イオン源の動作を安定性が
向上する。
As described above, according to the present invention, the connection wire for applying a negative voltage to the negative electrode and the connection portion with other objects are exposed at the high potential portion between the high voltage flange and the ground flange. Since it disappears, there is no risk of flashover between the high-potential portion and the connecting wire or the like, and in the vicinity of both flanges. As a result, the stability of the operation of the ion source is improved.

【図面の簡単な説明】[Brief description of drawings]

第1図は、この考案に係るイオン源の引出し電極系周り
の具体的な構造の例を部分的に示す拡大断面図である。
第2図は、イオン源の基本的な構成例を示す概略図であ
る。第3図は、第2図のイオン源の引出し電極系周りの
具体的な構造の従来例を部分的に示す拡大断面図であ
る。 2…プラズマソース部、10…引出し電極系、12…正電
極、13…負電極、14…接地電極、16…イオンビーム、20
…高圧フランジ、24…接地フランジ、26…電流導入端
子、28…接続線、32…支持枠、34…絶縁管、36,38…カ
バー。
FIG. 1 is an enlarged sectional view partially showing an example of a specific structure around the extraction electrode system of the ion source according to the present invention.
FIG. 2 is a schematic diagram showing a basic configuration example of an ion source. FIG. 3 is an enlarged sectional view partially showing a conventional example of a specific structure around the extraction electrode system of the ion source of FIG. 2 ... Plasma source part, 10 ... Extraction electrode system, 12 ... Positive electrode, 13 ... Negative electrode, 14 ... Ground electrode, 16 ... Ion beam, 20
… High-pressure flange, 24… grounding flange, 26… current introducing terminal, 28… connecting wire, 32… supporting frame, 34… insulating tube, 36,38… cover.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】プラズマを作るプラズマソース部と、この
プラズマソース部からイオンビームを引き出すものであ
って、正電位にされる正電極、負電位にされる負電極お
よび接地電位にされる接地電極を有する引出し電極系と
を備え、前記正電極を、正の高電圧が印加される高圧フ
ランジに取り付け、前記接地電極を、金属製の支持枠に
よって、接地電位にされる接地フランジから支持し、か
つこの接地フランジに電流導入端子を通してそれと前記
負電極とを接続線で接続した構造のイオン源において、
前記支持枠の側壁部内に絶縁管を通し、この絶縁管内に
前記接続線を通し、かつ前記負電極の周縁部に、少なく
とも同負電極と前記接続線との接続部の近傍を覆う金属
製のカバーを取り付けていることを特徴とするイオン
源。
1. A plasma source part for producing plasma, and an ion beam extracted from the plasma source part, the positive electrode having a positive potential, the negative electrode having a negative potential, and the ground electrode having a ground potential. And a positive electrode, the positive electrode is attached to a high-voltage flange to which a positive high voltage is applied, and the ground electrode is supported by a metal support frame from a ground flange at a ground potential. And in the ion source having a structure in which it is connected to the negative electrode through a connection line through a current introducing terminal to the ground flange,
An insulating tube is passed through the side wall portion of the support frame, the connecting wire is passed through the insulating tube, and the peripheral portion of the negative electrode is made of metal that covers at least the vicinity of the connecting portion between the negative electrode and the connecting wire. An ion source characterized by having a cover attached.
JP13706789U 1989-11-27 1989-11-27 Ion source Expired - Lifetime JPH0719083Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13706789U JPH0719083Y2 (en) 1989-11-27 1989-11-27 Ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13706789U JPH0719083Y2 (en) 1989-11-27 1989-11-27 Ion source

Publications (2)

Publication Number Publication Date
JPH0376355U JPH0376355U (en) 1991-07-31
JPH0719083Y2 true JPH0719083Y2 (en) 1995-05-01

Family

ID=31684243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13706789U Expired - Lifetime JPH0719083Y2 (en) 1989-11-27 1989-11-27 Ion source

Country Status (1)

Country Link
JP (1) JPH0719083Y2 (en)

Also Published As

Publication number Publication date
JPH0376355U (en) 1991-07-31

Similar Documents

Publication Publication Date Title
JP3414398B2 (en) Ion beam gun
JPH0719083Y2 (en) Ion source
JP2603722B2 (en) High frequency inductively coupled plasma mass spectrometer
JPH0559536B2 (en)
JP2929768B2 (en) Cylindrical plasma generator
US4008413A (en) Compact high voltage feedthrough for gas discharge devices
US3973158A (en) Device comprising an ion source in which the ions are accelerated in a direction perpendicular to a magnetic field of high intensity
US4232244A (en) Compact, maintainable 80-KeV neutral beam module
JPH08124514A (en) High voltage isolator
JPH06231712A (en) Ecr type ion source
JPH0521245Y2 (en)
JPH1092363A (en) Acceleration tube for electron beam
JP2591822B2 (en) High frequency inductively coupled plasma mass spectrometer
JP2806641B2 (en) High frequency inductively coupled plasma mass spectrometer
JPH06283299A (en) Ion accelerator
JP3167207B2 (en) Ion accelerator
JP2760088B2 (en) Ion source
JPH06318441A (en) Electron beam device with electron gun
JPH086319Y2 (en) Electron beam irradiation device
JP3357553B2 (en) High voltage generation FEG tank
JPS625001Y2 (en)
RU2058610C1 (en) Device for vacuum treatment of cathode-ray tube
JP3104368B2 (en) Ion removal device and ion removal method
JPS5912511A (en) Gas bushing
JP3096167B2 (en) Ion implanter

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term