JPH07201719A - Heat treatment apparatus and heat treatment method - Google Patents

Abstract

(57) [Summary] [Purpose] It is possible to perform heat treatment from both the front and back sides of the object to be processed, and it is possible to shorten the heat treatment time by rapidly raising and lowering the temperature, thereby improving throughput. In a heat treatment apparatus for mounting a wafer W and controlling the temperature of the wafer W, a mounting table 6 for mounting the wafer W thereon.
1, a support pin 63 protruding from the upper surface of the mounting table 61 for supporting the wafer W, and an upper lid 65 for raising and lowering the temperature of the wafer W at a high speed at a position facing the mounting table 61,
The mounting table 61 and the upper lid 65 are provided so that the temperature can be controlled independently, and the wafer W is mounted on the mounting table 61 by the support pins 63.
One of the upper lid 65 and the upper lid 65 is formed so as to be movable back and forth, so that the distance between the wafer W and the mounting table 61 and the upper lid 65 can be adjusted.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus and a heat treatment method.

[0002]

2. Description of the Related Art Generally, in a semiconductor device manufacturing process, a circuit pattern is reduced using a photolithography technique and transferred to a photoresist, which is exposed and then developed.

When performing such processing, a processing system is used in which a coating / developing apparatus and an exposure apparatus are connected to each other through an interface section for loading and unloading a semiconductor wafer to be processed. In this processing system, the semiconductor wafer is subjected to a hydrophobic treatment for improving the adhesion of the resist to the surface in a coating and developing apparatus, then cooled to a predetermined temperature, and then subjected to resist coating and then heat treatment. . Then, the semiconductor wafer is transferred to the interface section, transferred to the exposure apparatus, subjected to the exposure processing, and then transferred to the coating and developing apparatus again for the development processing.

[0004]

The heat treatment apparatus for performing the cooling treatment and the heat treatment in the above-mentioned conventional treatment system controls the temperature of the semiconductor wafer which is the object to be treated, by controlling the temperature to a desired temperature. By holding a semiconductor wafer in close proximity to a plate or a cold plate, the temperature of the wafer is temporarily brought close to the hot plate temperature or the cold plate temperature. However, this method has a problem that it takes a long time for the temperature of the semiconductor wafer to reach a desired temperature because of heat conduction by radiation and convection.

The present invention has been made under such circumstances, and the purpose thereof is to be able to perform heat treatment from both the front and back sides of the object to be treated, and to raise and lower the temperature rapidly to shorten the heat treatment time. Another object of the present invention is to provide a heat treatment apparatus and a heat treatment method capable of improving the throughput.

[0006]

According to a first aspect of the present invention, in a heat treatment apparatus for placing an object to be processed and controlling the temperature of the object to be processed, a temperature provided on a mounting table on which the object to be processed is placed. Elevating means, supporting means for protruding the upper surface of the temperature elevating means to support the object to be processed, and temperature elevating and accelerating means for elevating the temperature of the object at a high speed at a position facing the temperature elevating means. The temperature raising / lowering means and the temperature raising / lowering acceleration means are independently controllable, and the support means allows the object to be processed to move back and forth with respect to one of the temperature raising / lowering means and the temperature raising / lowering acceleration means. It is characterized in that the distance between the object to be processed and the temperature raising / lowering means and the temperature raising / lowering acceleration means can be adjusted.

According to a second aspect of the present invention, in a heat treatment apparatus which mounts an object to be processed and controls the temperature of the object to be processed, a temperature raising / lowering unit provided on a mounting table on which the object to be processed is placed, and the temperature. A sealed space is formed between the temperature rising and accelerating means that raises and lowers the temperature of the object to be processed at a position facing the lifting means, and an annular exhaust passage is formed in the outer peripheral portion of the sealed space. It is characterized in that the gas is exhausted through an exhaust port provided in the.

According to a third aspect of the present invention, in a heat treatment apparatus for mounting an object to be processed and controlling the temperature of the object to be processed, temperature raising and lowering means provided on a mounting table on which the object to be processed is mounted, and Supporting means for projecting on the upper surface of the temperature elevating means to support the object to be processed and temperature elevating and accelerating means for rapidly elevating the temperature of the object to be processed are arranged at a position facing the temperature elevating means. Temperature detecting means for detecting the temperature of the object to be processed supported by, and a signal to the driving part of the supporting means when the temperature of the object to be processed reaches a predetermined temperature based on the signal from the temperature detecting means. And a control means for transmitting.

According to a fourth aspect of the present invention, in the heat treatment apparatus for mounting the object to be processed and controlling the temperature of the object to be processed, the heat processing apparatus is provided on a mounting table for mounting and cooling the object to be processed. The cooling means, the supporting means for protruding the upper surface of the cooling means to support the object to be processed, and the cooling accelerating means for cooling the temperature of the object to be processed at a high speed at a position facing the cooling means are arranged. The cooling means and the cooling accelerating means are provided so that the temperature can be controlled independently, and the object to be processed is formed by the supporting means so as to be able to advance and retreat with respect to either the cooling means or the cooling accelerating means. The distance between the cooling means and the cooling acceleration means is adjustable.

According to a fifth aspect of the present invention, when the object to be processed is placed and the temperature of the object to be processed is controlled, the temperature raising / lowering means provided on the mounting table on which the object to be treated is placed, and the temperature raising / lowering means. Support means for projecting on the upper surface of the means for supporting the object to be processed, and temperature elevating and accelerating means for elevating and lowering the temperature of the object to be processed at high speed are arranged at positions facing the temperature elevating and lowering means. The temperature raising / lowering accelerating means is independently temperature controlled, and the object to be treated is formed by the supporting means so as to be movable back and forth with respect to any one of the temperature raising / lowering means and the temperature raising / lowering accelerating means. It is characterized in that the interval between the temperature raising / lowering means and the temperature raising / lowering acceleration means is adjusted.

[0011]

According to the invention of claims 1 and 5, the temperature raising / lowering means set to a desired temperature provided on the mounting table on which the object to be treated is placed, and the object to be treated at a position facing the temperature raising / lowering means. For the purpose of raising and lowering the temperature of the body at a high speed, the temperature raising / lowering acceleration means is set to be slightly lower than the desired temperature when lowering the temperature of the object to be treated, and slightly higher than the desired temperature when raising the temperature of the object to be treated. And are arranged. The temperature elevating means and the temperature elevating / accelerating means can independently control the temperature, and the supporting means projecting above the temperature elevating means to support the object to be processed brings the object to be processed close to the temperature elevating / accelerating means to rapidly increase the temperature. When the temperature rises and falls and approaches the desired temperature, the object to be processed is moved away from the temperature elevation accelerating means, and is brought close to the temperature raising and lowering means to gently change the temperature to obtain the desired temperature.

According to the second aspect of the invention, a sealed space is formed between the temperature raising / lowering means and the temperature raising / lowering acceleration means, an annular exhaust passage is formed in the outer peripheral portion of the sealed space, and the annular exhaust space is provided in the annular exhaust space. By exhausting through the exhaust port, the cooling or heat treatment of the surface of the object to be processed can be made uniform, and the film thickness and the like on the surface of the object to be processed can be uniformly processed.

Further, according to the invention of claim 3, the temperature detecting means for detecting the temperature of the object to be processed on the supporting means is provided between the temperature raising and lowering means and the temperature raising and lowering acceleration means.
Based on the signal from the temperature detecting means, the control means for transmitting the signal to the drive part of the supporting means when the temperature of the object to be processed which is close to the temperature raising / lowering acceleration means reaches a preset temperature. The drive unit is operated by. Then, the object to be processed can be brought close to the temperature raising and lowering means, and the temperature of the object to be processed can be gently controlled under the optimum condition to a preset desired temperature.

According to the fourth aspect of the invention, the cooling means is provided on the mounting table for mounting and cooling the object to be processed, and the temperature of the object to be processed is set at a position facing the cooling means and the cooling means. For the purpose of cooling at a high speed, cooling accelerating means set at a temperature slightly lower than the desired temperature of the object to be processed is arranged. The cooling means and the cooling accelerating means are capable of independently controlling the temperature, and the supporting means projecting on the upper surface of the cooling means to support the object to be processed brings the object to be processed close to the cooling accelerating means to rapidly cool the temperature, When the temperature approaches the desired temperature, the object to be processed can be moved away from the cooling accelerating means and brought closer to the cooling means to gently change the temperature to reach the desired temperature.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS To perform such processing, the processing system shown in FIG. 1 is used. This processing system includes a loader unit 40 for loading and unloading a semiconductor wafer W (hereinafter referred to as a wafer) as an object to be processed, a brush cleaning device 42 for cleaning the wafer W with a brush, and the wafer W with high-pressure jet water. A jet water cleaning device 44, an adhesion processing device 46 for hydrophobizing the surface of the wafer W, a cooling processing device 48 for cooling the wafer W to a predetermined temperature, and a resist coating device 50 for coating a resist on the surface of the wafer W.
In addition, the heat treatment device 52 for pre-baking or post-baking the wafer W before and after the resist coating, the developing device 54 for developing the wafer W, and the like are integrally assembled to improve work efficiency.

A wafer transfer path 56 is provided along the longitudinal direction at the center of the processing system configured as described above, and the devices 40 to 54 are arranged on the wafer transfer path 56 with their front faces facing each other. , The wafer carrier 58 is used for each of the devices 40 to 54.
In order to transfer the wafer W, the wafer W can be moved on the wafer transfer path 56.

The wafer W has an adhesion processing unit 46.
In addition to being subjected to the hydrophobic treatment by the cooling treatment device 48, the cooling treatment device 48 cools it to a predetermined temperature, and the resist coating device 50 applies a resist to the heat treatment device 52, which then heats it, and then the cooling treatment device 48 cools it to a predetermined temperature. To be done. The wafer W, which has been coated with a resist on the surface by the resist coating device 50 and then heated by the heat treatment device 52, is cooled by the cooling treatment device 48 and then transferred from an interface unit (not shown) to an exposure device (not shown). Exposure process. Then, the exposed wafer W is again conveyed to the coating and developing apparatus via the interface section (not shown) and is developed by the developing apparatus 54.

FIG. 2 is a schematic explanatory view of the heat treatment apparatus of the present invention, FIG. 3 is a schematic perspective view of the heat treatment apparatus, FIG. 4 is a plan view showing a part of the heat treatment apparatus in a cross section, and FIG. A side view is shown. The first embodiment is a case where the heat treatment apparatus of the present invention is applied to the cooling treatment apparatus 48 of the above treatment system.

As shown in FIG. 2, the cooling processing apparatus 48 has a mounting table 61 as a cooling means (temperature elevating means) for mounting and cooling the wafer W, and a through hole provided in the mounting table 61. Regarding the wafer W and a plurality of, for example, three support pins 63 configured to penetrate through the inside of the mounting table 62 and to be retractable on the upper surface of the mounting table 61 so as to project and support the wafer W at the upper end and to be separated from the mounting table 61, A main part is composed of an upper lid 65 as a cooling accelerating means (temperature raising / lowering accelerating means) at an upper position facing the mounting table 61.

In this case, a cooling water supply passage 67 is provided inside the mounting table 61 and the upper lid 65, and a cooling water supply source 69 is connected to the supply passage 67 via a pipe 68. Further, the support pin 63 is erected on an elevating plate 72 which is connected to an elevating cylinder 71 (driving section) and moves up and down. The supporting pin 63 moves up and down together with the elevating plate 72 which moves up and down by driving the elevating cylinder 71. It is possible to appear on the upper surface of 61. Support pin 63 configured in this way
Can support the wafer W in a state of protruding onto the mounting table 61, and the wafer W projects onto the mounting table 61 when the support pins 63 are lowered and accommodated in the through holes 62 of the mounting table 61. A plurality of, for example, three proximity pins 73 are supported. At this time, the distance between the wafer W and the upper surface of the mounting table 61 is about 0.3 mm.

Further, the processing space between the mounting table 61 and the upper lid 65 is a sealed space 75 which is shielded from the outside air, and an annular exhaust passage 77 is provided in the outer peripheral portion of the sealed space 75. Then, as shown in FIG. 6, the annular exhaust passage 77
Exhaust ports 78 are provided at four locations of
An exhaust duct 80 is connected to the exhaust duct 79 via an exhaust pipe 79, and the interior of the sealed space 75 can be exhausted by driving a vacuum pump (exhaust device) (not shown) connected to the exhaust duct 80.

In the sealed space 75, for example, nitrogen (N
2) A supply pipe 81 for purge gas such as gas is inserted, and N2 gas as purge gas is supplied from this supply pipe 81. In this way, by discharging the N2 gas or air at a constant flow rate, the air flow in the sealed space 75 can be made a laminar flow, and the thermal effect on the wafer W can be reduced. Further, it is possible to change the balance between the amount of N2 gas or air and the amount of exhaust gas to create a condition that has the least thermal effect on the wafer W, and to perform discharge / exhaust under that condition.

On the other hand, a sensor 83 as a temperature detecting means is attached to at least one location on the inner surface of the upper lid 65, and the temperature of the surface of the wafer W supported by the support pins 63 by the sensor 83 is detected. It can be detected. As the sensor 83, for example, a radiation thermometer that detects the temperature by measuring the amount of infrared light emitted from the surface of the wafer W is used. The sensor 83 does not necessarily have to be attached to the inner surface of the upper lid 65, and may be attached to the mounting table 61 side. For example, it may be arranged below the periphery of the wafer W, and the temperature may be measured from the back surface side of the wafer W.

The measurement value detected by the sensor 83 having such a configuration is transmitted as a detection signal to a central processing unit (hereinafter referred to as CPU) 85 which is a control means, and is compared with data stored in advance by the CPU 85. The control signal subjected to the arithmetic processing is transmitted to the lifting cylinder 71 of the drive unit of the support pin 63 and the transfer mechanism drive unit 87 of the wafer transfer body 58.

Next, an operation mode of the cooling processing device 48 will be described. First, the wafer W, which has been heat-treated at a temperature of about 90 ° C. or higher in the heat treatment device 52, is transferred to the wafer carrier 5.
After being taken out from the heat treatment device 52 by 8, it is carried to the cooling treatment device 48 and supported by the support pins 63 projecting on the mounting table 61. After transferring the wafer W to the support pins 63, the wafer carrier 58 retracts from the cooling processing device 48. The wafer W supported by the support pins 63 is exposed to air or an atmosphere of N 2 gas supplied from the supply pipe 81 in the sealed space 75.

The wafer W supported by the support pins 63 is extended by the elevating cylinder 71 so that the upper lid 65 serving as cooling accelerating means (temperature elevating and accelerating means).
Close to. At this time, the cooling water supplied from the cooling water supply source 69 flows through the supply passage 67, so that the upper lid 65 is maintained at a temperature preset by the CPU 85, that is, a temperature slightly lower than a desired temperature, for example, 15 ° C. ing.

In this state, the wafer W is cooled rapidly,
The temperature of the wafer W is intermittently or continuously detected by the temperature sensor 83, and when the temperature of the wafer W is lowered to, for example, 30 ° C., a control signal from the CPU 85 to start the lowering is transmitted to the elevating cylinder 71 to cause the elevating cylinder 71 to operate. The contracting operation is performed, and the elevating plate 7 is moved along with the contracting operation of the elevating cylinder 71.
Along with 2, the support pin 63 descends and is housed in the through hole 62 to mount the wafer W on the mounting table 61, that is, the proximity pin 73.

The wafer W mounted on the mounting table 61 is gently cooled to a desired temperature (specifically 23 ° C.) by the cooling water supplied to the supply passage 67 provided in the mounting table 61. When the wafer W is cooled to a desired temperature, the elevating cylinder 71 extends to raise the support pins 63 and project onto the mounting table 61 to support the wafer W. In this state, the wafer transfer body 58 enters the cooling processing device 48 to receive the wafer W, and then the wafer W is taken out of the cooling processing device 48 and transferred to the next processing step.

Here, the desired temperature is a temperature required by the exposure apparatus and is, for example, 23 ° C. As the current fine processing advances, the temperature accuracy of the wafer W at the time of exposure is strictly required, while the processing time is also required to be shortened in terms of productivity efficiency. FIG. 7 is a graph showing the relationship between time and temperature by the conventional cooling means (temperature raising / lowering means), and FIG. 8 is a graph showing the time and temperature by the cooling means (temperature raising / lowering means) and cooling acceleration means (temperature raising / lowering acceleration means) of the present invention. The graph which shows the relationship of is shown. As is clear from the graph, the cooling accelerating means (temperature raising / lowering accelerating means) arranged for the purpose of rapidly cooling (raising and lowering) the temperature of the wafer W makes it possible to rapidly cool (raise and lower) the temperature and shorten the heat treatment time. Therefore, the throughput can be improved.

The second embodiment is a case where the heat treatment apparatus of the present invention is applied to the heat treatment apparatus 52 used in the semiconductor wafer coating and developing apparatus shown in FIG. As in the first embodiment, the heat treatment device 52 is provided on the mounting table 61 as a heating means (temperature elevating means) for mounting and heating the wafer W, as shown in FIG. The mounting table 61 is configured to penetrate through the through hole 62 formed therein and to be able to project and retract on the upper surface of the mounting table 61, and to project and support the wafer W at the upper end.
A plurality of, for example, three support pins 6 configured to be separated from the
3 and the upper lid 6 as a heating accelerating means (temperature elevating and accelerating means) at an upper position facing the mounting table 61 with respect to the wafer W.
5 and 5 form a main part.

In this case, a heater 91 is provided inside the mounting table 61 and the upper lid 65, and a heater power source 93 is connected to the heater 91 via a lead wire 92. Further, the support pin 63 is erected on an elevating plate 72 which is connected to an elevating cylinder 71 (driving section) and moves up and down. The supporting pin 63 moves up and down together with the elevating plate 72 which moves up and down by driving the elevating cylinder 71. It is possible to appear on the upper surface of 61. The support pin 63 configured as described above can support the wafer W while protruding onto the mounting table 61, and the wafer W is accommodated in the through hole 62 of the mounting table 61 when the supporting pin 63 descends. In the state, it is supported on a plurality of, for example, three proximity pins 73 projecting on the mounting table 61. At this time, the distance between the wafer W and the upper surface of the mounting table 61 is about 0.3 mm.

Further, the processing space between the mounting table 61 and the upper lid 65 is a sealed space 75 which is shielded from the outside air, and an annular exhaust passage 77 is provided on the outer peripheral portion of the sealed space 75. Then, as shown in FIG. 6, the annular exhaust passage 77
Exhaust ports 78 are provided at four locations of
An exhaust duct 80 is connected to the exhaust duct 79 via an exhaust pipe 79, and the interior of the sealed space 75 can be exhausted by driving a vacuum pump (exhaust device) (not shown) connected to the exhaust duct 80.

In the sealed space 75, for example, nitrogen (N
2) A supply pipe 81 for purge gas such as gas is inserted, and N2 gas as purge gas is supplied from this supply pipe 81. In this way, by discharging the N2 gas or air at a constant flow rate, the air flow in the sealed space 75 can be made a laminar flow, and the thermal effect on the wafer W can be reduced. Further, it is possible to change the balance between the amount of N2 gas or air and the amount of exhaust gas to create a condition that has the least thermal effect on the wafer W, and to perform discharge / exhaust under that condition.

On the other hand, a sensor 83 as a temperature detecting means is attached to at least one position on the inner surface of the upper lid 65, and the temperature of the surface of the wafer W supported by the support pins 63 by the sensor 83 is detected. It can be detected. As the sensor 83, for example, a radiation thermometer that detects the temperature by measuring the amount of infrared light emitted from the surface of the wafer W is used. The sensor 83 does not necessarily have to be attached to the inner surface of the upper lid 65, and may be attached to the mounting table 61 side. For example, it may be arranged below the periphery of the wafer W, and the temperature may be measured from the back surface side of the wafer W.

The measurement value detected by the sensor 83 thus constructed is transmitted as a detection signal to a central processing unit (hereinafter referred to as CPU) 85 which is a control means, and is compared with data stored in advance by the CPU 85. The control signal subjected to the arithmetic processing is transmitted to the lifting cylinder 71 of the drive unit of the support pin 63 and the transfer mechanism drive unit 87 of the wafer transfer body 58.

Next, the operation mode of the heat treatment apparatus of the present invention configured as described above will be described. Here, the heat treatment (pre-baking) of the wafer W after the resist application will be described.

First, when the wafer W after resist application is held by the wafer carrier 58 and the wafer W is carried to a fixed position above the mounting table 61 via the opening 52A, the support pins 63 rise. Then, the wafer W is supported and received by the tip of the wafer W, the wafer carrier 58 is retracted, the opening 52A is closed, and the wafer W is placed on the mounting table 61 in the sealed space 75 (processing space). In this state, after the purge gas is supplied from the supply pipe 81 into the sealed space 75 and the sealed space 75 is replaced with N2 gas, the heater 91 of the mounting table 61 and the upper lid 65, which are drive-adjusted to a predetermined processing temperature in advance, is used. The front and back surfaces of the wafer W are rapidly heat-treated by the heat of.

Alternatively, when the same operation mode as that of the first embodiment is required in which strict temperature control is required, the support pin 6 is used.
The wafer W supported by No. 3 approaches the upper lid 65 which is the heating acceleration means (temperature elevation acceleration means) by the elevating cylinder 71 performing the extension operation. At this time, the upper lid 65 is kept at a temperature preset by the CPU 85, that is, a temperature slightly higher than a predetermined temperature, by the heater 91 generating heat. The predetermined temperature can be set and changed arbitrarily.

In this state, the wafer W is rapidly heated,
The temperature of the wafer W is intermittently or continuously detected by the temperature sensor 83, and when the temperature of the wafer W rises to near a predetermined temperature, the CPU 85 transmits a control signal to enable the descent to the ascending / descending cylinder 71. When the lifting cylinder 71 contracts, the supporting pins 63 move down together with the lifting plate 72 to be housed in the through holes 62 and the wafer W is mounted on the mounting table 61, that is, the proximity pins 73. To do.

The wafer W mounted on the mounting table 61 is gradually cooled to a predetermined temperature by the heater 91 provided on the mounting table 61 generating heat. When the wafer W is heated to a predetermined temperature, the elevating cylinder 71 extends to raise the support pins 63 and project onto the mounting table 61 to support the wafer W. In this state, the wafer carrier 58 enters the heat treatment apparatus 52 to receive the wafer W, and then the wafer W is taken out of the heat treatment apparatus 52 and conveyed to the next processing step.

During the heat treatment, a vacuum pump (not shown) provided in the exhaust duct 80 operates, so that the sealed space 75
The air used for the heat treatment in the inside is uniformly exhausted toward the annular exhaust passage 77, flows into the annular exhaust passage 77,
The gas is exhausted from the exhaust port 78 through the exhaust pipe 79 through the exhaust duct 80. Therefore, since it is exhausted uniformly,
It is also possible to prevent the one-sided phenomenon that the film thickness is partially increased due to the non-uniformity of the exhaust flow.

In the above-described embodiment, in the heat treatment apparatus of the present invention, the temperature raising / lowering means is provided on the mounting table 61 and the temperature raising / lowering acceleration means is provided on the upper lid 65. However, the present invention is not limited to this apparatus. Conversely, the temperature raising / lowering means may be provided on the upper lid 65, and the temperature raising / lowering acceleration means may be provided on the mounting table 61. In terms of heat convection, it is desirable to arrange a member having a higher temperature on the upper side. Further, in the above embodiment, the temperature raising / lowering means and the temperature raising / lowering acceleration means are arranged so as to face each other vertically, but the arrangement method is not limited to this, and if the same effect is obtained, they may be arranged on the left and right sides. It does not matter if they do not face each other.

In the above embodiments, the case where the heat treatment apparatus of the present invention is applied to the coating / developing apparatus for semiconductor wafers has been described, but the present invention is not limited to this apparatus, and can be applied to heat treatment apparatuses other than the coating / developing apparatus. Further, it is needless to say that the present invention can be applied to heat treatment of objects such as LCD glass substrates and CDs other than semiconductor wafers.

[0044]

As described above, according to the heat treatment apparatus of the present invention, which is configured as described above, the following effects can be obtained.

According to the heat treatment apparatus and the heat treatment method of the first and fifth aspects, the heat treatment can be performed from both the front and back sides of the object to be processed, and the object is disposed for the purpose of raising and lowering the temperature of the object at high speed. With the temperature rise / fall acceleration means, the temperature can be raised and lowered rapidly to shorten the heat treatment time.
Throughput can be improved.

According to the heat treatment apparatus of the second aspect, a sealed space is formed between the temperature raising / lowering means and the temperature raising / lowering acceleration means, and an annular exhaust passage is formed in the outer peripheral portion of the sealed space. By exhausting gas through the exhaust port provided in the annular exhaust space, the surface of the object to be processed can be uniformly cooled or heat-treated, and the film thickness or the like on the surface of the object to be processed can be uniformly processed.

Further, according to the heat treatment apparatus of the third aspect, the temperature is controlled between the temperature raising and lowering means and the temperature raising and lowering acceleration means, and the heat treatment of the object to be processed is automatically performed under the optimum temperature condition. The throughput can be improved without damaging the object to be processed and the circuit pattern on the surface of the object to be processed.

According to the heat treatment apparatus of the fourth aspect, it is possible to perform cooling treatment from both the front and back sides of the object to be processed, and the cooling acceleration means arranged for the purpose of cooling the temperature of the object to be processed rapidly By lowering the temperature, the cooling processing time can be shortened and the throughput can be improved.

[Brief description of drawings]

FIG. 1 is a schematic perspective view showing a processing system to which a heat treatment apparatus of the present invention is applied.

FIG. 2 is a schematic explanatory view showing an embodiment of the heat treatment apparatus of the present invention.

FIG. 3 is a schematic perspective view of a heat treatment apparatus of the present invention.

FIG. 4 is a plan view showing a cross section of a part of the heat treatment apparatus of the present invention.

FIG. 5 is a side view showing a cross section of a part of the heat treatment apparatus of the present invention.

FIG. 6 is an enlarged sectional view showing a sealed space and an annular exhaust passage according to the present invention.

FIG. 7 is a chart of time and temperature in a conventional heat treatment apparatus.

FIG. 8 is a chart of time and temperature showing effects of the first embodiment of the heat treatment apparatus of the present invention.

[Explanation of symbols]

 W semiconductor wafer (object to be treated) 48 cooling treatment device 52 heat treatment device 61 mounting table (temperature raising / lowering means) 63 support pin 65 upper lid (temperature raising / lowering acceleration means) 67 supply passage 69 cooling water supply source 71 raising / lowering cylinder (driving unit) 73 Proximity pin 75 Sealed space 77 Annular exhaust passage 78 Exhaust port 81 Supply pipe 83 Sensor 85 Central processing unit (CPU) 91 Heater 93 Heater power supply

Claims (5)

[Claims] 1. In a heat treatment apparatus for mounting an object to be processed and controlling the temperature of the object to be processed, a temperature raising / lowering unit provided on a mounting table on which the object to be treated is placed, and an upper surface of the temperature raising / lowering unit. The temperature raising / lowering means and the temperature raising / lowering acceleration are arranged by supporting means for projecting to support the body to be treated and temperature raising / lowering acceleration means for raising / lowering the temperature of the body to be treated at a position opposed to the temperature raising / lowering means. Means for independently controlling the temperature, and the support means for forming the object to be processed forward and backward with respect to one of the temperature elevating means and the temperature elevating and accelerating means, A heat treatment apparatus characterized in that an interval between the elevating means and the temperature elevating and accelerating means is adjustable. 2. A heat treatment apparatus for mounting an object to be processed and controlling the temperature of the object to be processed, the temperature elevating means provided on a mounting table for mounting the object to be processed, and the temperature elevating means facing each other. A sealed space is formed between the temperature rising and accelerating means for raising and lowering the temperature of the object to be processed at a high speed, an annular exhaust passage is formed in the outer peripheral portion of the sealed space, and an exhaust gas provided in the annular exhaust space is formed. A heat treatment apparatus, which exhausts air through a mouth. 3. A heat treatment apparatus for mounting an object to be processed and controlling the temperature of the object to be processed, the temperature elevating means provided on a mounting table on which the object to be processed is mounted, and an upper surface of the temperature elevating means. Supporting means for projecting to support the object to be processed, and temperature elevating and accelerating means for elevating the temperature of the object to be processed at high speed are arranged at a position facing the temperature elevating and lowering means, and are supported by the supporting means. Temperature detecting means for detecting the temperature of the object to be processed, and control means for transmitting a signal to the drive portion of the supporting means when the temperature of the object to be processed reaches a predetermined temperature based on the signal from the temperature detecting means. A heat treatment apparatus comprising: 4. In a heat treatment apparatus for mounting an object to be processed and controlling the temperature of the object to be processed, a cooling means provided on a mounting table for mounting and cooling the object to be heat-treated, and The cooling means and the cooling acceleration are provided by arranging a supporting means projecting from the upper surface of the cooling means to support the object to be processed and a cooling accelerating means for cooling the temperature of the object to be processed at a high speed at a position facing the cooling means. Means for independently controlling the temperature, and the support means forms the object to be processed forward and backward with respect to one of the cooling means and the cooling accelerating means, and the object to be processed, the cooling means and the cooling means. A heat treatment apparatus characterized in that the distance from the acceleration means can be adjusted. 5. An object to be processed is placed, and when controlling the temperature of the object to be processed, temperature raising and lowering means provided on a mounting table on which the object to be treated is placed, and the temperature raising and lowering means are projected onto the upper surface of the temperature raising and lowering means. A supporting means for supporting the object to be processed, and a temperature elevating and accelerating means for elevating the temperature of the object to be processed at a high speed at a position facing the temperature elevating and lowering means. In addition to independently controlling the temperature, the support means forms the object to be processed forward and backward with respect to one of the temperature elevating means and the temperature elevating and accelerating means, and the object to be processed, the temperature elevating means and the temperature A heat treatment method, characterized in that a space between the up-down acceleration means is adjusted.