JPH0720176A - Optical electric field sensor - Google Patents
Optical electric field sensorInfo
- Publication number
- JPH0720176A JPH0720176A JP5167679A JP16767993A JPH0720176A JP H0720176 A JPH0720176 A JP H0720176A JP 5167679 A JP5167679 A JP 5167679A JP 16767993 A JP16767993 A JP 16767993A JP H0720176 A JPH0720176 A JP H0720176A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- electric field
- field sensor
- package
- intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Abstract
(57)【要約】
【目的】 光電界センサにおけるパッケージ材からの静
電界の除去と、光導波路素子の保温性の向上。
【構成】 光學結晶を含む光部品１〜５より構成され、
自然または強制発生する電界の強度を、この電界を通過
する光の強度が変化するのを利用して測定する光電界セ
ンサであって、上記の光部品が石英などのガラス材もし
くはセラミック素材を用いたパッケージ７の中に配置さ
れ密閉されるていることを特徴とする。またパッケージ
の表面の主部を梨地加工するとより効果的である。
【効果】 組み込み後の光変調特性が変化することな
く、室温からの温度変化に対しても光学バイアスを変動
させることがない。
(57) [Abstract] [Purpose] Removal of the electrostatic field from the package material in the optical electric field sensor and improvement of the heat retention of the optical waveguide device. [Composition] Comprised of optical components 1 to 5 including optical crystals,
An optical electric field sensor that measures the intensity of a natural or forcibly generated electric field by utilizing the change in the intensity of light passing through the electric field. It is characterized in that it is placed in the package 7 and sealed. It is more effective to finish the main part of the surface of the package with satin finish. [Effect] The optical modulation characteristics after incorporation do not change, and the optical bias does not change even when the temperature changes from room temperature.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＥＭＣ測定（ノイズ測
定）に代表される、フィールド内の電界強度を測定する
ために用いる光電界センサに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical electric field sensor used for measuring the electric field strength in a field, which is represented by EMC measurement (noise measurement).
【０００２】[0002]
【従来の技術】光導波路を分岐後、分岐された一方また
は両方の光導波路に結晶軸に平行な電界を印加して導波
光の位相を変動させ、再び合波させる形状の光導波路マ
ッハツェンダー干渉計は、その印加電圧によって合波後
の光強度を変動させることから、光強度の測定により電
極部に印加される微小電圧を測定するような電界センサ
として用いられる。マッハツェンダー干渉計によって位
相変調された光は、その印加電圧によって三角関数波曲
線を示す。2. Description of the Related Art An optical waveguide Mach-Zehnder interference having a shape in which an optical field parallel to the crystal axis is applied to one or both of the branched optical waveguides after the optical waveguides are branched to change the phase of the guided light and to be multiplexed again. The meter is used as an electric field sensor for measuring a minute voltage applied to the electrode portion by measuring the light intensity because the light intensity after the combination is varied by the applied voltage. The light phase-modulated by the Mach-Zehnder interferometer exhibits a trigonometric wave curve depending on the applied voltage.
【０００３】図２はその曲線すなわち光変調特性を示す
図で、印加電圧０Ｖの時に、この三角関数波の直線的な
変化部分（極大値と極小値の中点）に光強度が位置する
ように調整（光学バイアス調整）しておけば、光電界セ
ンサとして印加電界に対する光強度の変化量が微小電圧
に対して比例することとなり、印加電界を光強度で測る
事ができる。つまり、光電界センサとして用いる場合に
はこのような特性を必要とするものである。FIG. 2 is a diagram showing the curve, that is, the light modulation characteristic. When the applied voltage is 0 V, the light intensity is located at the linear change portion (the midpoint between the maximum value and the minimum value) of this trigonometric function wave. If the adjustment is performed (optical bias adjustment), the change amount of the light intensity with respect to the applied electric field as an optical electric field sensor is proportional to the minute voltage, and the applied electric field can be measured by the light intensity. That is, when used as an optical electric field sensor, such characteristics are required.
【０００４】通常マッハツェンダー干渉計を作製する
と、基板となるＬｉＮｂＯ3 の特性や素子の製作条件等
によって、前記印加電圧による光変調特性は違ってく
る。具体的には、半波長電圧や損失等の特性の再現性は
とれるが、印加電圧０Ｖでの光強度を、電界センサとし
て必要とされる極大値と極小値の中点に合わせることは
むづかしい。そのため、作製後の導波路に歪みを与えて
調整する方法（光学バイアス調整）がとられるのが一般
的である。Normally, when a Mach-Zehnder interferometer is manufactured, the optical modulation characteristics due to the applied voltage differ depending on the characteristics of LiNbO 3 used as the substrate and the manufacturing conditions of the element. Specifically, the characteristics such as half-wave voltage and loss can be reproducible, but it is difficult to match the light intensity at an applied voltage of 0 V to the midpoint between the maximum value and the minimum value required for the electric field sensor. Therefore, a method (optical bias adjustment) is generally used to adjust the manufactured waveguide by giving distortion.
【０００５】光電界センサは、金属性のアンテナによっ
て電界を受け、光変調器の電極部分に印加電圧を発生さ
せる形状を用いている。この時、センサの周りにアンテ
ナ以外の金属が存在すると、光電界センサの周りに発生
している電界（形状）を乱してしまう。このことから、
アンテナ以外の金属成分を除去するため、そのパッケー
ジも非金属で作製する。一般的にはプラスチックやアク
リル等の樹脂を用いている。The optical electric field sensor uses a shape in which an electric field is received by a metallic antenna and an applied voltage is generated in the electrode portion of the optical modulator. At this time, if metal other than the antenna exists around the sensor, the electric field (shape) generated around the optical electric field sensor is disturbed. From this,
The package is also made of non-metal so as to remove metal components other than the antenna. Generally, a resin such as plastic or acrylic is used.
【０００６】このようにして作られた光電界センサは、
その特性からμＶオーダーの電界強度を測定するのが普
通であるため、その周囲に発生する電界の影響を受け易
い。また、プラスチックやアクリル等の樹脂製のパッケ
ージ等で発生する静電界は、光学バイアスを変動させる
程度に大きい場合がしばしばある。このようなパッケー
ジによる静電界は、湿度等の変動が大きく関与してしま
うため、常に一定の光学バイアスの素子にすることは困
難である。しかし、光強度特性が０Ｖの印加電圧で極大
値と極小値の中点にあれば静電界による光学バイアス移
動はある程度は無視できることから、従来はパッケージ
後の光学バイアスの調節に重点がおかれていた。The optical electric field sensor thus manufactured is
Since it is usual to measure the electric field strength on the order of μV from the characteristics, it is easily affected by the electric field generated around it. In addition, an electrostatic field generated in a package made of resin such as plastic or acrylic is often large enough to change the optical bias. Since the electrostatic field due to such a package is greatly affected by fluctuations in humidity and the like, it is difficult to always use an element having a constant optical bias. However, if the light intensity characteristic is at the midpoint between the maximum value and the minimum value with an applied voltage of 0 V, the optical bias shift due to the electrostatic field can be ignored to some extent, so that the conventional focus is on the adjustment of the optical bias after packaging. It was
【０００７】[0007]
【発明が解決しようとする課題】本発明は、パッケージ
後のパッケージ材からの静電界を除去すると共に、マッ
ハツェンダー干渉計の温度ドリフトによる光学バイアス
変化を除去する光導波路素子の保温性を高めようとする
ものである。SUMMARY OF THE INVENTION The present invention is intended to improve the heat retaining property of an optical waveguide device that removes an electrostatic field from a packaging material after packaging and removes an optical bias change due to a temperature drift of a Mach-Zehnder interferometer. It is what
【０００８】[0008]
【課題を解決するための手段】本発明によれば、光学結
晶を含む光部品により構成され、自然または強制発生す
る電界の強度を、この電界を通過する光の強度が変化す
るのを利用して測定する光電界センサにおいて、前記光
部品がセラミック素材を用いたパッケージの中に配置さ
れ密閉されていることを特徴とする光電界センサが得ら
れる。なお上記のセラミック素材の代わりに、石英など
を含めたガラス部材を用いても良い。またいづれの場合
にもパッケージの表面の一部または全部（内面も含む）
を梨地（ンゴバ擦り）状に加工すると良い。According to the present invention, an optical component including an optical crystal is used, and the intensity of an electric field naturally or forcibly generated is used to change the intensity of light passing through the electric field. In the optical electric field sensor to be measured by the above method, an optical electric field sensor is obtained in which the optical component is arranged and sealed in a package made of a ceramic material. Note that a glass member including quartz or the like may be used instead of the above ceramic material. In either case, part or all of the package surface (including the inner surface)
It is good to process the soybean paste into a satin finish.
【０００９】[0009]
【作用】このような手法を用いる事により、パッケージ
材質から発生する静電界は無くなり、また、外部温度の
変化によるパッケージ内部への温度変化の影響は小さく
なる。By using such a method, the electrostatic field generated from the package material is eliminated, and the influence of temperature change inside the package due to the change of external temperature is reduced.
【００１０】[0010]
【実施例】図１は本発明の一実施例である光電界センサ
を石英パッケージの上半分を取り除いてやや斜めから見
た図である。ＬｉＮｂＯ3 Ｚ基板１（結晶軸Ｚ方向）上
にマッハツェンダー干渉計パターンをＴｉパターンで作
製した後、熱拡散によって光導波路２を作製した。その
後、光導波路２の面にＳｉＯ2 膜を形成し、その上に変
調用電極パターン３を形成した。光導波路２へのレーザ
光の入出射の為、端面研磨を施して入射光側には定偏波
光ファイバ４を、出射光側にはシングルモードファイバ
５を接続した。このようにして出来た素子の光変調特性
は先に説明した図２に示すような形状を示し、光電界セ
ンサとして最適と思われるものを選別した。その後更
に、変調用電極３に電界検知用のアンテナ６を接続して
全体を石英パッケージ７に納めた。パッケージ組上げは
有機接着剤を使用して、外気が内部素子に影響を与えな
いように密封した。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a view of an optical electric field sensor according to an embodiment of the present invention seen from a slightly oblique direction with the upper half of a quartz package being removed. After the Mach-Zehnder interferometer pattern was formed as a Ti pattern on the LiNbO 3 Z substrate 1 (crystal axis Z direction), the optical waveguide 2 was formed by thermal diffusion. After that, a SiO 2 film was formed on the surface of the optical waveguide 2, and the modulation electrode pattern 3 was formed thereon. In order to enter / emit the laser light to / from the optical waveguide 2, end face polishing was performed, and a polarization maintaining optical fiber 4 was connected to the incident light side and a single mode fiber 5 was connected to the emitting light side. The light modulation characteristics of the thus-produced element showed the shape as shown in FIG. 2 described above, and the most suitable optical electric field sensor was selected. After that, an antenna 6 for electric field detection was further connected to the modulation electrode 3, and the whole was placed in a quartz package 7. The package was assembled using an organic adhesive and sealed so that the outside air did not affect the internal elements.
【００１１】一方比較のために、パッケージにアクリル
系プラスチックを用いた従来型の光電界センサを用意し
た。ここで、このそれぞれの素子は光変調特性が同一で
あるものを用いている。On the other hand, for comparison, a conventional optical electric field sensor using acrylic plastic for the package was prepared. Here, each of these elements has the same light modulation characteristic.
【００１２】本発明の効果を実証するため、できあがっ
た各素子を電極を短絡させた状態で、アクリルスポンジ
でくるみ、１日室温で放置することでパッケージ静電界
を印加した後、それぞれ光電界センサの光変調特性を測
定したところ、従来型のものは光学バイアスの変動が確
認されたが、本発明の光電界センサには変動が認められ
なかった。また、外部温度変化に関しても、アクリル系
プラスチック製パッケージの従来の光電界センサで光学
バイアスの変動が起こる状況下（室温＋１０℃）でも、
本発明の石英パッケージを用いた光電界センサでは光学
バイアス変動は起こらなかった。In order to demonstrate the effect of the present invention, each of the completed elements is wrapped in an acrylic sponge with the electrodes short-circuited, and left for one day at room temperature to apply a package electrostatic field, and then each is subjected to an optical field sensor. As a result of measuring the light modulation characteristics of No. 1, the optical bias of the conventional type was confirmed to be fluctuated, but no fluctuation was observed in the optical electric field sensor of the present invention. Also, regarding the external temperature change, even when the optical bias changes in the conventional optical electric field sensor of the acrylic plastic package (room temperature + 10 ° C.),
The optical electric field sensor using the quartz package of the present invention did not cause optical bias fluctuation.
【００１３】また、本発明の光電界センサーとして石英
パッケージに梨地加工を施したものについて上と同様に
比較したところ、上の場合以上によい結果が得られた。
更にパッケージとしてセラミクスを用いたものでも、石
英の場合と同じような結果が得られた。Further, when a quartz package as the optical electric field sensor of the present invention, which was subjected to satin finish, was compared in the same manner as above, a better result than that in the above case was obtained.
Further, even when the ceramics is used as the package, the same result as in the case of quartz is obtained.
【００１４】[0014]
【発明の効果】本発明による光電界センサは、パッケー
ジとしてガラス（石英）もしくはセラミクスを用いるこ
とにより、組み込み後の光変調特性が変化することな
く、室温からの温度変化に対しても光学バイアスを変動
させることがない安定した特性が得られた。The optical electric field sensor according to the present invention uses glass (quartz) or ceramics as a package, so that the optical modulation characteristic does not change after being incorporated, and an optical bias is applied even when the temperature changes from room temperature. Stable characteristics that did not fluctuate were obtained.
【００１５】すなわち、本発明による光電界センサは、
素子の保温状態が安定であるため、室温で使用する限り
（主として使用される電波暗室内でのＥＭＣ測定は、室
温環境下で行われる）温度ドリフトの影響は考えなくて
済むため、温度ドリフト対策の加工工程を除去した生産
性の良い光電界センサを提供する事ができる。That is, the optical electric field sensor according to the present invention is
Since the heat retention state of the element is stable, it is not necessary to consider the effect of temperature drift as long as it is used at room temperature (EMC measurement mainly used in an anechoic chamber is performed under room temperature environment). It is possible to provide an optical electric field sensor with high productivity, which eliminates the processing step.
【図１】本発明の一実施例である光電界センサの構成を
パッケージの上半分を取り除いて示した斜視図。FIG. 1 is a perspective view showing the configuration of an optical electric field sensor that is an embodiment of the present invention with the upper half of the package removed.
【図２】光電界センサの印加電圧による光変調特性を示
す図。FIG. 2 is a diagram showing optical modulation characteristics according to applied voltage of an optical electric field sensor.
１ ＬｉＮｂＯ3 Ｚ基板 ２ 光導波路 ３ 変調用電極パターン ４ 定偏波光ファイバ ５ シングルモード光ファイバ ６ アンテナ ７ 石英パッケージ1 LiNbO 3 Z substrate 2 Optical waveguide 3 Electrode pattern for modulation 4 Constant polarization optical fiber 5 Single mode optical fiber 6 Antenna 7 Quartz package
Claims (3)
自然または強制発生する電界の強度を、この電界を通過
する光の強度が変化するのを利用して測定する光電界セ
ンサにおいて、前記光部品がセラミック素材を用いたパ
ッケージの中に配置され密閉されていることを特徴とす
る光電界センサ。1. An optical component including an optical crystal,
In an optical electric field sensor that measures the intensity of an electric field that is naturally or forcibly generated by utilizing the change in the intensity of light that passes through the electric field, the optical component is placed in a package made of ceramic material and sealed. An optical electric field sensor characterized in that
自然または強制発生する電界の強度を、この電界を通過
する光の強度が変化するのを利用して測定する光電界セ
ンサにおいて、前記光部品がガラス素材を用いたパッケ
ージの中に配置され密閉されていることを特徴とする光
電界センサ。2. An optical component including an optical crystal,
In an optical electric field sensor for measuring the intensity of a natural or forcibly generated electric field by utilizing the change in the intensity of light passing through the electric field, the optical component is placed in a package made of glass material and hermetically sealed. An optical electric field sensor characterized in that
の主部を梨地加工したことを特徴とする光電界センサ。3. An optical electric field sensor, characterized in that the main part of the surface of the package in the above items 1 and 2 is satin finished.
Priority Applications (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5167679A JPH0720176A (en) | 1993-07-07 | 1993-07-07 | Optical electric field sensor |
| EP00100913A EP0999455B1 (en) | 1993-07-07 | 1994-07-07 | Optical electric field sensor |
| KR1019950700889A KR100238713B1 (en) | 1993-07-07 | 1994-07-07 | Optical electric field sensor |
| PCT/JP1994/001102 WO1995002191A1 (en) | 1993-07-07 | 1994-07-07 | Optical electric field sensor |
| CA002144079A CA2144079C (en) | 1993-07-07 | 1994-07-07 | Optical electric field sensor using optical components having electrooptical effect. |
| CNB941904741A CN1136456C (en) | 1993-07-07 | 1994-07-07 | Photoelectric Sensors |
| EP94919861A EP0668506A4 (en) | 1993-07-07 | 1994-07-07 | Optical electric field sensor. |
| DE69432825T DE69432825T2 (en) | 1993-07-07 | 1994-07-07 | Optical sensor for electrical fields |
| EP00100936A EP0997738B1 (en) | 1993-07-07 | 1994-07-07 | Optical electric field sensor |
| DE69431538T DE69431538T2 (en) | 1993-07-07 | 1994-07-07 | Optical sensor for electrical fields |
| US08/397,083 US5583637A (en) | 1993-07-07 | 1994-07-07 | Optical electric field sensor using optical component having electrooptical effect |
| CN00124187A CN1289929A (en) | 1993-07-07 | 2000-08-15 | Photoelectric sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5167679A JPH0720176A (en) | 1993-07-07 | 1993-07-07 | Optical electric field sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0720176A true JPH0720176A (en) | 1995-01-24 |
Family
ID=15854217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5167679A Pending JPH0720176A (en) | 1993-07-07 | 1993-07-07 | Optical electric field sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0720176A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6385360B1 (en) * | 1998-08-25 | 2002-05-07 | Nec Corporation | Light control device and a method for manufacturing the same |
-
1993
- 1993-07-07 JP JP5167679A patent/JPH0720176A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6385360B1 (en) * | 1998-08-25 | 2002-05-07 | Nec Corporation | Light control device and a method for manufacturing the same |
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