JPH07202088A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH07202088A JPH07202088A JP102994A JP102994A JPH07202088A JP H07202088 A JPH07202088 A JP H07202088A JP 102994 A JP102994 A JP 102994A JP 102994 A JP102994 A JP 102994A JP H07202088 A JPH07202088 A JP H07202088A
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- metal base
- semiconductor device
- insulating substrate
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
(57)【要約】
【目的】半導体チップをマウントした機械的に脆い絶縁
基板を、その放熱板を兼ねた金属ベース板に加わる応力
から安全に保護できるようにした信頼性の高い半導体装
置を提供する。
【構成】半導体チップ1をマウントした絶縁基板2を、
放熱板を兼ねた金属ベース板3に搭載して半田付けし、
これに樹脂ケース4,外部導出端子5を組合わせて組立
て構成した半導体装置において、前記金属ベース板に対
して絶縁基板の半田付け領域から外れた箇所に応力吸収
用の凹溝10,11を形成し、外部から金属ベース板に
加わる応力を前記凹溝部分に集中させて吸収し、絶縁基
板を応力に起因するクラック,基板割れから安全に保護
する。
(57) [Abstract] [Purpose] To provide a highly reliable semiconductor device capable of safely protecting a mechanically fragile insulating substrate on which a semiconductor chip is mounted from stress applied to a metal base plate which also serves as a heat sink. To do. [Structure] The insulating substrate 2 on which the semiconductor chip 1 is mounted is
It is mounted on the metal base plate 3 that also functions as a heat sink and soldered,
In the semiconductor device assembled by combining the resin case 4 and the external lead-out terminal 5 with this, concave grooves 10 and 11 for absorbing stress are formed in a portion outside the soldering region of the insulating substrate with respect to the metal base plate. Then, the stress applied from the outside to the metal base plate is concentrated and absorbed in the groove portion, and the insulating substrate is safely protected from cracks and substrate breakage due to the stress.
Description
【0001】[0001]
【産業上の利用分野】本発明は、パワートランジスタ,
ダイオード,サイリスタモジュールなどを対象とした半
導体装置に関する。BACKGROUND OF THE INVENTION The present invention relates to a power transistor,
The present invention relates to a semiconductor device for a diode, a thyristor module or the like.
【0002】[0002]
【従来の技術】まず、本発明の実施対象となる半導体装
置の従来における組立構造を図4,図5に示す。図にお
いて、1は半導体チップ、2は半導体チップ1をマウン
トした絶縁基板(セラミック製,あるいは窒化アルミニ
ウム製でその表面に回路パターンが形成されている)、
3は放熱板を兼ねた金属ベース板、4は樹脂ケース、5
は外部導出端子、6はゲル状充填材(シリコーンゲ
ル)、7は封止樹脂(エポキシ樹脂)であり、前記絶縁
基板2は金属ベース板3の上に搭載して半田8により接
合されている。なお、金属ベース板3の四隅コーナ部に
は半導体装置を放熱フィン,機器などに取付けるための
ボルト穴9が開口している。2. Description of the Related Art First, a conventional assembly structure of a semiconductor device to which the present invention is applied is shown in FIGS. In the figure, 1 is a semiconductor chip, 2 is an insulating substrate on which the semiconductor chip 1 is mounted (made of ceramic or aluminum nitride, and a circuit pattern is formed on the surface thereof),
3 is a metal base plate that also serves as a heat sink, 4 is a resin case, and 5 is a resin case.
Is an external lead terminal, 6 is a gel filler (silicone gel), 7 is a sealing resin (epoxy resin), and the insulating substrate 2 is mounted on a metal base plate 3 and joined by solder 8. . It should be noted that bolt holes 9 for attaching the semiconductor device to heat radiation fins, equipment, etc. are opened at the four corners of the metal base plate 3.
【0003】[0003]
【発明が解決しようとする課題】ところで、前記した従
来構成の半導体装置では次記のような問題点がある。す
なわち、セラミック,あるいは窒化アルミニウムなどで
作られた絶縁基板2は機械的に脆い性質があり、外部か
ら曲げなどの応力が加わると簡単にクラック,基板割れ
などが生じて絶縁基板としての機能を果たさなくなる。By the way, the above-described conventional semiconductor device has the following problems. That is, the insulating substrate 2 made of ceramic, aluminum nitride or the like has a mechanically brittle property, and when stress such as bending is applied from the outside, cracks and substrate breakage easily occur, and the insulating substrate 2 functions as an insulating substrate. Disappear.
【0004】一方、絶縁基板2を搭載して半田付けした
金属ベース板3は、通常は厚さ数mm程度の銅製平板が採
用されている。このために、前記ボルト穴9にボルトを
通して金属ベース板3を放熱フィンのブロック,使用先
の機器などに取付ける際に、相手側取付部材の表面に凹
凸があったりして平坦度が低い場合には、ボルト締付に
より金属ベース板自身に曲げ応力が加わって反りなどが
生じ、この応力が絶縁基板2に波及してクラック,基板
割れを引き起こすことがある。On the other hand, the metal base plate 3 on which the insulating substrate 2 is mounted and soldered is usually a copper flat plate having a thickness of about several mm. For this reason, when mounting the metal base plate 3 on the block of the heat radiation fins, equipment of the destination, etc., by inserting bolts through the bolt holes 9 and the surface of the mating mounting member is uneven, the flatness is low. When the bolts are tightened, bending stress is applied to the metal base plate itself to cause warping, and this stress may spread to the insulating substrate 2 to cause cracks or substrate breakage.
【0005】本発明は上記の点にかんがみなされたもの
であり、その目的は前記課題を解決し、絶縁基板を金属
ベース板に加わる応力から安全に保護できるようにした
信頼性の高い半導体装置を提供することにある。The present invention has been made in view of the above points, and an object thereof is to solve the above problems and to provide a highly reliable semiconductor device capable of safely protecting an insulating substrate from a stress applied to a metal base plate. To provide.
【0006】[0006]
【課題を解決するための手段】上記目的は、本発明によ
り、金属ベース板に対して絶縁基板の半田付け領域から
外れた箇所に応力吸収用の凹溝を形成することにより達
成される。また、前記構成における凹溝は、具体的に次
記のような態様で実施することができる。According to the present invention, the above object is achieved by forming a groove for absorbing stress on a metal base plate at a position outside the soldering region of the insulating substrate. Further, the concave groove in the above configuration can be specifically implemented in the following modes.
【0007】(1)凹溝を、金属ベース板上に並置して
搭載した複数の絶縁基板の中間位置に形成する。 (2)凹溝を、金属ベース板に穿孔した取付ボルト穴の
周域に形成する。 (3)凹溝の溝深さを金属ベース板の板厚の30〜70
%の範囲に定める。 (4)凹溝に弾力性のあるコーキング材を充填する。(1) A groove is formed at an intermediate position between a plurality of insulating substrates mounted side by side on a metal base plate. (2) The concave groove is formed in the peripheral area of the mounting bolt hole drilled in the metal base plate. (3) The groove depth of the concave groove is 30 to 70 of the plate thickness of the metal base plate.
Set in the range of%. (4) The concave groove is filled with an elastic caulking material.
【0008】[0008]
【作用】上記の構成によれば、金属ベース板の凹溝形成
部ではその残り代の肉厚が他部分よりも局部的に薄くて
変形し易くなっている。したがって、ボルト締結などに
より金属ベース板に曲げ応力が加わった際には、その応
力の大半が金属ベース板に形成した凹溝部に集中し、こ
の凹溝部分に変形(曲げ)が生じて応力を吸収しする。
この結果、肉厚の厚い絶縁基板の搭載領域には変形の生
じることがなく、機械的に脆い絶縁基板が応力に起因す
るクラック,基板割れから安全に保護される。なお、凹
溝はスリット状の連続した凹溝,あるいは窪みを点線状
に並べた不連続の凹溝で実施することができる。According to the above construction, the thickness of the remaining portion of the recessed groove forming portion of the metal base plate is locally smaller than that of the other portion, and is easily deformed. Therefore, when bending stress is applied to the metal base plate due to bolt fastening or the like, most of the stress concentrates in the recessed groove portion formed in the metal base plate, and deformation (bending) occurs in this recessed groove portion to reduce the stress. Absorb.
As a result, no deformation occurs in the mounting area of the thick insulating substrate, and the mechanically fragile insulating substrate is safely protected from cracks and substrate breakage due to stress. The groove may be a slit-shaped continuous groove or a discontinuous groove formed by arranging depressions in a dotted line.
【0009】また、金属ベース板に加わる応力が絶縁基
板の搭載領域に波及するのをカットするために、1枚の
金属ベース板に複数の絶縁基板を並置して搭載したもの
に対しては凹溝を絶縁基板と絶縁基板との中間に形成
し、併せて取付ボルト穴の周域にも凹溝を形成するのが
効果的である。さらに、凹溝の溝深さが大きすぎるとそ
の分だけ板の残り代が薄くなって金属ベース板自身の機
械的強度が低下して製作,組立時に不要な変形が生じ易
くなる。また、溝深さが浅すぎると殆ど応力吸収効果が
得られず、この観点から実用的には凹溝の溝深さを金属
ベース板の板厚の30〜70%の範囲に定めることで、
必要な強度を確保しつつ効果的に応力吸収効果が得られ
る。Further, in order to prevent the stress applied to the metal base plate from spreading to the mounting area of the insulating substrate, it is concave for a plurality of insulating substrates mounted side by side on one metal base plate. It is effective to form the groove between the insulating substrate and the insulating substrate and also form the concave groove in the peripheral region of the mounting bolt hole. Further, if the groove depth of the concave groove is too large, the remaining margin of the plate is thinned accordingly, and the mechanical strength of the metal base plate itself is lowered, so that unnecessary deformation is likely to occur during manufacture and assembly. Further, if the groove depth is too shallow, almost no stress absorption effect can be obtained. From this viewpoint, by practically setting the groove depth of the concave groove within the range of 30 to 70% of the plate thickness of the metal base plate,
The stress absorption effect can be effectively obtained while ensuring the required strength.
【0010】さらに加えて、前記凹溝にシリコン樹脂な
どの弾力性のあるコーキング材を充填しておくことによ
り、応力吸収効果を損なうことなく取扱い上で金属ベー
ス板自身を保護できる。In addition, by filling the concave groove with an elastic caulking material such as silicon resin, the metal base plate itself can be protected in handling without impairing the stress absorbing effect.
【0011】[0011]
【実施例】以下、本発明の実施例を図面に基づいて説明
する。なお、実施例の図中で図4,図5に対応する同一
部材には同じ符号を付して説明を省略する。まず、図
1,図2に示す実施例においては、図4と比べて金属ベ
ース板3の上面に、応力吸収用の凹溝として左右に並ぶ
2枚の絶縁基板2の中間部,および四隅に穿孔した取付
ボルト穴9の周りにそれぞれ直線,円弧のスリット状凹
溝10,11が分散して新たに追加形成されている。こ
こで、金属ベース板3の板厚を3mmとして、凹溝10,
11の溝深さは板厚の1/2の1.5mmに定めてある。さ
らに、凹溝10,11にはシリコン樹脂などの弾力性の
あるコーキング材12が充填されている。Embodiments of the present invention will be described below with reference to the drawings. In the drawings of the embodiment, the same members corresponding to those in FIGS. 4 and 5 are designated by the same reference numerals and the description thereof will be omitted. First, in the embodiment shown in FIGS. 1 and 2, in comparison with FIG. Around the drilled mounting bolt hole 9, linear and circular slit-shaped concave grooves 10 and 11 are dispersed and newly formed. Here, the thickness of the metal base plate 3 is set to 3 mm, and the concave groove 10,
The groove depth of 11 is set to 1.5 mm, which is 1/2 of the plate thickness. Further, the concave grooves 10 and 11 are filled with an elastic caulking material 12 such as silicon resin.
【0012】かかる構成により、金属ベース板3のボル
ト穴9に締結ボルトを通して相手側の取付部材(放熱フ
ィン,機器)に締結するなどして金属ベース板3に曲げ
応力が加わった場合でも、その応力の大半が前記凹溝1
0,11の部分に集中し、この凹溝部分に変形(曲げ)
が生じて応力を吸収する。したがって、肉厚の厚い絶縁
基板2の搭載領域に応力が波及して反り,曲がり変形の
生じることがなく、これにより機械的に脆い絶縁基板2
を応力に起因するクラック,基板割れから安全に保護で
きる。なお、前記凹溝10,11はいずれか一方だけで
も、応力吸収効果が多少低まるものの絶縁基板2に波及
する応力を軽減できる。With such a structure, even when bending stress is applied to the metal base plate 3 by fastening bolts through the bolt holes 9 of the metal base plate 3 to the mounting members (radiation fins, devices) on the other side, and the like. Most of the stress is the groove 1
Concentrate on the 0 and 11 parts and transform (bend) into this groove
Occurs and absorbs the stress. Therefore, stress does not spread to the mounting region of the thick insulating substrate 2 to cause warping and bending deformation, and the insulating substrate 2 is mechanically fragile.
Can be safely protected from cracks and substrate cracks caused by stress. Even if only one of the grooves 10 and 11 is provided, the stress absorbing effect is somewhat reduced, but the stress that spreads to the insulating substrate 2 can be reduced.
【0013】図3は本発明の応用実施例を示すものであ
り、金属ベース板2に対して、図2の実施例におけるス
リット状凹溝10と対応する箇所に沿って窪み13を断
続的に形成し、これらで不連続の凹溝を形成している。
この実施例においても、図2とほぼ同等な応力吸収効果
が得られることが実験結果からも確認されている。FIG. 3 shows an applied embodiment of the present invention, in which recesses 13 are intermittently formed on the metal base plate 2 along a portion corresponding to the slit-shaped groove 10 in the embodiment of FIG. They are formed to form discontinuous concave grooves.
It has been confirmed from the experimental results that the stress absorption effect almost equal to that in FIG. 2 can be obtained also in this embodiment.
【0014】[0014]
【発明の効果】以上述べたように、本発明の構成によれ
ば、半導体装置の放熱板を兼ねた金属ベース板に対し、
半導体チップをマウントした絶縁基板(セラミック製,
窒化アルミニウム製)の搭載領域から外れた箇所に応力
吸収用の凹溝を形成したことにより、取付ボルトの締結
などで金属ベース板に曲げ応力が加わった場合でも、こ
の応力が凹溝部分に集中し、この凹溝部分の変形により
吸収して機械的に脆い絶縁基板を応力に起因するクラッ
ク,割れから安全に保護することができ、これにより半
導体装置の信頼性向上が図れる。As described above, according to the structure of the present invention, as compared with the metal base plate which also serves as the heat dissipation plate of the semiconductor device,
Insulation board mounted with semiconductor chips (ceramic,
By forming a groove for absorbing stress in a place outside the mounting area of (made of aluminum nitride), even if bending stress is applied to the metal base plate due to fastening of mounting bolts, this stress is concentrated in the groove However, it is possible to safely protect the insulating substrate, which is mechanically brittle by absorption by the deformation of the concave groove portion, from cracks caused by stress, and thus the reliability of the semiconductor device can be improved.
【図1】本発明の実施例による半導体装置の構成断面図FIG. 1 is a sectional view showing the configuration of a semiconductor device according to an embodiment of the present invention.
【図2】図1における金属ベース板の平面図FIG. 2 is a plan view of the metal base plate in FIG.
【図3】本発明の応用実施例による金属ベース板の平面
図FIG. 3 is a plan view of a metal base plate according to an application example of the present invention.
【図4】従来における半導体装置の構成断面図FIG. 4 is a sectional view showing the configuration of a conventional semiconductor device.
【図5】図4における金属ベース板の平面図FIG. 5 is a plan view of the metal base plate in FIG.
1 半導体チップ 2 絶縁基板 3 金属ベース板 4 樹脂ケース 5 外部導出端子 8 半田 9 取付ボルト穴 10,11 スリット状凹溝 12 コーキング材 13 窪み(不連続凹溝) 1 Semiconductor Chip 2 Insulating Substrate 3 Metal Base Plate 4 Resin Case 5 External Lead-out Terminal 8 Solder 9 Mounting Bolt Holes 10, 11 Slit-like Grooves 12 Caulking Material 13 Dimples (Discontinuous Grooves)
Claims (5)
放熱板を兼ねた金属ベース板上に搭載して半田付けし、
これに樹脂ケース,外部導出端子を組合わせて組立て構
成した半導体装置において、前記金属ベース板に対して
絶縁基板の半田付け領域から外れた箇所に応力吸収用の
凹溝を形成したことを特徴とする半導体装置。1. An insulating substrate on which a semiconductor chip is mounted,
It is mounted on a metal base plate that also serves as a heat sink and soldered,
In a semiconductor device constructed by assembling a resin case and an external lead terminal in combination with this, a groove for stress absorption is formed at a position outside the soldering region of the insulating substrate with respect to the metal base plate. Semiconductor device.
た複数の絶縁基板の中間位置に形成したことを特徴とす
る請求項1記載の半導体装置。2. The semiconductor device according to claim 1, wherein the groove is formed at an intermediate position between a plurality of insulating substrates mounted side by side on the metal base plate.
ト穴の周域に形成したことを特徴とする請求項1記載の
半導体装置。3. The semiconductor device according to claim 1, wherein the recessed groove is formed in a peripheral region of a mounting bolt hole formed in the metal base plate.
〜70%の範囲に定めたことを特徴とする請求項1ない
し3のいずれかに記載の半導体装置。4. The groove depth of the concave groove is set to 30 of the thickness of the metal base plate.
4. The semiconductor device according to claim 1, wherein the semiconductor device is set in a range of 70% to 70%.
たことを特徴とする請求項1ないし4のいずれかに記載
の半導体装置。5. The semiconductor device according to claim 1, wherein the concave groove is filled with an elastic caulking material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06001029A JP3094768B2 (en) | 1994-01-11 | 1994-01-11 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06001029A JP3094768B2 (en) | 1994-01-11 | 1994-01-11 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07202088A true JPH07202088A (en) | 1995-08-04 |
| JP3094768B2 JP3094768B2 (en) | 2000-10-03 |
Family
ID=11490144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06001029A Expired - Fee Related JP3094768B2 (en) | 1994-01-11 | 1994-01-11 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3094768B2 (en) |
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| JP2002184914A (en) * | 2000-12-14 | 2002-06-28 | Nippon Inter Electronics Corp | Composite semiconductor device |
| JP2006209353A (en) * | 2005-01-26 | 2006-08-10 | Sharp Corp | Image determining apparatus, image forming apparatus, image determining method, image determining program, image forming program, and computer-readable recording medium |
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| DE102011076886A1 (en) | 2010-06-02 | 2011-12-08 | Mitsubishi Electric Corporation | Power semiconductor device |
| JP2012054513A (en) * | 2010-09-03 | 2012-03-15 | Toshiba Corp | Semiconductor package |
| WO2013141154A1 (en) * | 2012-03-22 | 2013-09-26 | 富士電機株式会社 | Semiconductor module having heat dissipating fin |
| US20140117508A1 (en) * | 2012-11-01 | 2014-05-01 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor unit |
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| JP2015126168A (en) * | 2013-12-27 | 2015-07-06 | 三菱電機株式会社 | Power module |
| CN108738368A (en) * | 2017-02-13 | 2018-11-02 | 新电元工业株式会社 | Electronic equipment |
| JP6567241B1 (en) * | 2018-06-12 | 2019-08-28 | 三菱電機株式会社 | Power semiconductor module and power conversion device |
| DE102006045939B4 (en) * | 2006-09-28 | 2021-06-02 | Infineon Technologies Ag | Power semiconductor module with improved stability against temperature changes |
| US11251101B2 (en) | 2018-03-20 | 2022-02-15 | Fuji Electric Co., Ltd. | Semiconductor device |
-
1994
- 1994-01-11 JP JP06001029A patent/JP3094768B2/en not_active Expired - Fee Related
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