JPH0720501A - Non-linear resistance element and manufacturing method thereof - Google Patents
Non-linear resistance element and manufacturing method thereofInfo
- Publication number
- JPH0720501A JPH0720501A JP16575193A JP16575193A JPH0720501A JP H0720501 A JPH0720501 A JP H0720501A JP 16575193 A JP16575193 A JP 16575193A JP 16575193 A JP16575193 A JP 16575193A JP H0720501 A JPH0720501 A JP H0720501A
- Authority
- JP
- Japan
- Prior art keywords
- tantalum
- metal
- main component
- resistance element
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 45
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000010407 anodic oxide Substances 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 4
- 239000000463 material Substances 0.000 claims 2
- 238000007743 anodising Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 8
- 238000000059 patterning Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 206010011224 Cough Diseases 0.000 description 1
- CIJJJPBJUGJMME-UHFFFAOYSA-N [Ta].[Ta] Chemical compound [Ta].[Ta] CIJJJPBJUGJMME-UHFFFAOYSA-N 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
(57)【要約】
【目的】 歩留まりが高く、安価で表示品質の高い大型
液晶表示装置を提供する。
【構成】 本発明はＭＩＭ非線形抵抗素子に関わり、陽
極酸化が可能で、陽極酸化膜はタンタル或いはタンタル
を主成分とする金属の陽極酸化膜の誘電率より低く、且
つタンタル或いはタンタルを主成分とする金属のエッチ
ングに対して選択比を持つアルミニウムを主成分とする
金属と、タンタル或いはタンタルを主成分とする金属を
順次積層した積層構造を持つ下部電極において、パター
ニング後に形成した厚い陽極酸化膜の内、タンタル或い
はタンタルを主成分とする金属の陽極酸化膜をエッチン
グバックし、更に再び陽極酸化を行うことにより、低抵
抗配線と高性能ＭＩＭ非線形抵抗素子とを実現する事を
特徴とする。
(57) [Abstract] [Purpose] To provide a large-sized liquid crystal display device with high yield, low cost, and high display quality. The present invention relates to a MIM non-linear resistance element, which can be anodized, the anodized film is lower than the dielectric constant of an anodized film of tantalum or a metal whose main component is tantalum, and whose main component is tantalum or tantalum. Of a thick anodic oxide film formed after patterning in a lower electrode having a laminated structure in which a metal containing aluminum as a main component having a selection ratio for etching a metal to be etched and tantalum or a metal containing tantalum as a main component are sequentially laminated. Among them, tantalum or a metal anodic oxide film containing tantalum as a main component is etched back and anodized again, thereby realizing a low resistance wiring and a high performance MIM nonlinear resistance element.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、アクティブマトリック
ス型液晶表示装置に於いて、液晶のスイッチングに用い
られる金属−絶縁体−金属（ＭＩＭと記す）構造を有す
る非線形抵抗素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a non-linear resistance element having a metal-insulator-metal (MIM) structure used for liquid crystal switching in an active matrix type liquid crystal display device.
【０００２】[0002]
【従来の技術】従来のＭＩＭ非線形抵抗素子の一例を図
１を用いて説明する（特開平３−４６３８１）。2. Description of the Related Art An example of a conventional MIM nonlinear resistance element will be described with reference to FIG. 1 (Japanese Patent Laid-Open No. 3-46381).
【０００３】図１（ａ）はＭＩＭ非線形抵抗素子を用い
た液晶表示装置の走査線、素子及び画素電極部分の斜視
図である。また図１（ｂ）は、図１（ａ）の１点鎖線Ａ
−Ａ’に於ける構造断面図である。石英、或いは硝子等
の絶縁基板１０１上にＭＩＭ非線形抵抗素子が形成され
ている。下部電極は２５０Å程度のタンタル或いはタン
タルを主成分とする金属１０２と２０００Å程度のタン
グステン、モリブデン等の金属１０３の２層から成り、
両金属層共に陽極酸化が施され、その陽極酸化膜１０４
の厚みは５００Å程度である。FIG. 1A is a perspective view of a scanning line, an element and a pixel electrode portion of a liquid crystal display device using a MIM nonlinear resistance element. In addition, FIG. 1B is a dashed-dotted line A in FIG.
It is a structure sectional view in -A '. An MIM nonlinear resistance element is formed on an insulating substrate 101 such as quartz or glass. The lower electrode is composed of two layers of about 250Å tantalum or a metal 102 containing tantalum as a main component and about 2000Å metal 103 such as tungsten or molybdenum.
Both metal layers are anodized to form the anodized film 104.
Has a thickness of about 500Å.
【０００４】この構造をとることにより、配線抵抗をタ
ンタル１層の場合の１０〜２０％に下げている。大型の
ＬＣＤを実現しようとする場合、配線抵抗が高いとクロ
ストークが大きくなり、著しく表示品質を落としてしま
う。タンタルの比抵抗は１８０μΩ・ｃｍと高いため、
配線抵抗を下げるには膜厚を厚くする、もしくは配線幅
を太くするしかない。そこで、ここでは低抵抗金属とタ
ンタルとの２層配線により、従来のタンタル１層の場合
の１０〜２０％に配線抵抗を下げている。By adopting this structure, the wiring resistance is reduced to 10 to 20% of that in the case of one tantalum layer. When trying to realize a large-sized LCD, if the wiring resistance is high, the crosstalk becomes large and the display quality is remarkably deteriorated. Since the specific resistance of tantalum is as high as 180 μΩ · cm,
The only way to reduce the wiring resistance is to increase the film thickness or the wiring width. Therefore, here, the wiring resistance is reduced to 10 to 20% of the case of the conventional single layer of tantalum by the two-layer wiring of low resistance metal and tantalum.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら従来の技
術では、配線抵抗を下げる事は出来るものの、素子特性
はタンタルの陽極酸化膜ではなく、モリブデン、タング
ステン、或いはアルミニウムの陽極酸化膜に律束されて
しまっていた。モリブデン、タングステンの陽極酸化膜
は漏洩電流が大きい、またアルミニウムの陽極酸化膜は
正負の動作領域に於いて極性差が大きいため、液晶のス
イッチング素子としては不適当なものになってしまって
いた。However, in the conventional technique, although the wiring resistance can be reduced, the device characteristics are not restricted to the tantalum anodic oxide film but to the molybdenum, tungsten or aluminum anodic oxide film. I was sick. The anodic oxide film of molybdenum and tungsten has a large leakage current, and the anodic oxide film of aluminum has a large polarity difference in the positive and negative operating regions, so that it has been unsuitable for a liquid crystal switching element.
【０００６】[0006]
【課題を解決するための手段】本発明では、陽極酸化が
可能で、且つタンタル或いはタンタルを主成分とする金
属のエッチングに対して選択比を持つアルミニウムを主
成分とする金属、及びタンタル、或いはタンタルを主成
分とする金属を順次積層し、パターニング後に両者同時
に形成した厚い陽極酸化膜の内の酸化タンタルのみをエ
ッチングし、更に再び陽極酸化を行って薄い陽極酸化膜
を形成することにより、低抵抗配線と高性能ＭＩＭ非線
形抵抗素子とを実現する。According to the present invention, a metal containing aluminum as a main component, which can be anodized and has a selection ratio for etching tantalum or a metal containing tantalum as a main component, and tantalum, or By sequentially laminating a metal containing tantalum as a main component, etching only tantalum oxide in the thick anodic oxide film formed at the same time after patterning, and further performing anodic oxidation again to form a thin anodic oxide film. To realize a resistance wiring and a high-performance MIM nonlinear resistance element.
【０００７】[0007]
【実施例】以下実施例に基づいて本発明を詳しく説明す
る。EXAMPLES The present invention will be described in detail based on the following examples.
【０００８】図２（ａ）は本発明によるＭＩＭ非線形抵
抗素子を用いた液晶表示装置の走査線から素子及び画素
電極部分にかけての斜視図である。また図２（ｂ）は、
図２（ａ）の１点鎖線Ａ−Ａ’に於ける構造断面図であ
る。素子基板２０１上にアルミニウム、或いはアルミニ
ウムを主成分とする金属２０３と、その上層にはタンタ
ル、或いはタンタルを主成分とする金属２０２が積層さ
れている。タンタル、或いはタンタルを主成分をする金
属は、上面及び側面が陽極酸化膜２０４によって覆われ
ており、下層金属層は側面のみ陽極酸化２０５されてい
る。このような積層構造を持つ下部電極と交差するよう
にＣｒより成る上部電極２０６が設けられており、この
交差した部分がＭＩＭ非線形抵抗素子を形成する。ここ
で上部電極はＣｒに限定されることなく、Ａｌ、Ｔｉ等
の金属、或いはＩＴＯ、酸化スズ等の透明導電膜を用い
ても良い。この時、形成されたＭＩＭ素子はアルミニウ
ム−酸化アルミニウム−Ｃｒとタンタル−酸化タンタル
−Ｃｒの並列接続されたものであり、それぞれの電圧−
電流特性は図３（ａ）、（ｂ）のようになっているの
で、結果的には図３（ｃ）の特性が得られることにな
る。FIG. 2A is a perspective view from a scanning line to an element and a pixel electrode portion of a liquid crystal display device using the MIM nonlinear resistance element according to the present invention. In addition, FIG.
FIG. 3 is a structural cross-sectional view taken along one-dot chain line AA ′ in FIG. Aluminum or a metal 203 containing aluminum as a main component is stacked on the element substrate 201, and tantalum or a metal 202 containing tantalum as a main component is stacked thereover. The upper surface and the side surface of tantalum or a metal containing tantalum as a main component is covered with the anodized film 204, and the lower metal layer is anodized 205 only on the side surface. An upper electrode 206 made of Cr is provided so as to intersect with the lower electrode having such a laminated structure, and the intersecting portion forms an MIM nonlinear resistance element. Here, the upper electrode is not limited to Cr, and a metal such as Al or Ti or a transparent conductive film such as ITO or tin oxide may be used. At this time, the formed MIM element is one in which aluminum-aluminum oxide-Cr and tantalum-tantalum oxide-Cr are connected in parallel.
Since the current characteristics are as shown in FIGS. 3A and 3B, the characteristics shown in FIG. 3C are obtained as a result.
【０００９】このアルミニウムを主成分とする金属の陽
極酸化膜２０５とタンタルを主成分とする金属の陽極酸
化膜２０４の膜厚は、次の２点を満足する膜厚である。
第１点は上電極２０６に断線が発生しない下部電極形状
が実現できること、即ち陽極酸化後のタンタル−アルミ
ニウム境界部分に於いて、オーバーハングが発生しない
ことである。また第２点は形成されるＭＩＭ非線形素子
の素子特性が動作範囲内に於いて、殆ど下部電極のタン
タルを主成分とする金属の陽極酸化膜２０４の寄与のみ
となることである。The thicknesses of the metal anodic oxide film 205 containing aluminum as a main component and the metal anodic oxide film 204 containing tantalum as a main component satisfy the following two points.
The first point is that it is possible to realize a lower electrode shape in which no disconnection occurs in the upper electrode 206, that is, an overhang does not occur at the tantalum-aluminum boundary portion after anodization. The second point is that the element characteristics of the formed MIM nonlinear element are almost solely contributed by the metal anodic oxide film 204 whose main component is tantalum of the lower electrode within the operating range.
【００１０】またこの構造を採った時の配線抵抗は、例
えば線幅１０μｍ、配線長２８ｃｍ膜厚を２５００Åと
した場合、タンタル２５００Åでは約１４０ｋΩである
のに対し、１５００Åのタンタルと１０００Åのアルミ
ニウムの２層では約２．４ｋΩと約１／２０となる。こ
れにより配線抵抗による信号の遅延を小さくすることが
出来るため、クロストークの無い高画質化が実現でき
る。Further, the wiring resistance when this structure is adopted is about 140 kΩ for tantalum 2500 Å when the line width is 10 μm and the wiring length is 28 cm and the film thickness is 2500 Å, while that for 1500 Å tantalum and 1000 Å aluminum. In the two layers, it is about 2.4 kΩ, which is about 1/20. As a result, signal delay due to wiring resistance can be reduced, so that high image quality without crosstalk can be realized.
【００１１】このようなＭＩＭ素子は図４に示す製造工
程の一例により実現できる。Such an MIM element can be realized by an example of the manufacturing process shown in FIG.
【００１２】まずガラス基板４０１上にスパッタリング
法によりアルゴン雰囲気中でアルミニウムを主成分とす
る金属４０３を５００〜２０００Å程度、またタンタル
を主成分とする金属４０２を１０００〜２０００Å程度
連続成膜する。ここに通常のフォトリソグラフィー技術
によってレジストパターン４０４を形成し、ドライエッ
チング法を用いてタンタルを主成分とする金属４０３を
テーパー状にパターニングする。この後、ウエットエッ
チングにより下層のアルミニウム等の金属４０３をパタ
ーニングし、積層構造を持つ下部電極、及び配線とす
る。ここで第１回目の陽極酸化を施す。アルミニウム等
の下層金属層の陽極酸化膜４０５がポーラスとならない
ような、酒石酸アンモニウム等の化成液を選択し、化成
電圧は少なくとも３０Ｖより大きいところにとる。陽極
酸化レートはタンタルが〜１８Å／Ｖであるのに対し、
アルミニウムは〜１３Å／Ｖであるため、この陽極酸化
によりアルミニウムの側壁には３９０Åを超える酸化ア
ルミニウム膜が形成され、またタンタルは５４０Åを超
える酸化タンタルに覆われる。この状態ではタンタル−
アルミウムの側壁部はオーバーハングとなっている。こ
の第１回目の陽極酸化を施した後、ドライエッチングに
よりタンタルの陽極酸化膜４０４を、少なくともタンタ
ルの陽極酸化膜厚の半分以上エッチングバックする。更
に第２回目の陽極酸化をタンタル４０３に施す。この場
合の化成液はクエン酸或いは燐酸等を用い、２０〜４０
Ｖで陽極酸化を行う。このような工程を通すことによ
り、酸化タンタル４０６及び酸化アルミニウム４０５の
接合部分ではオーバーハングが発生せず、上電極が断線
する事の無い順テーパーが実現される。このようにして
形成された下電極に交差するように上電極４０７を形成
し、ＭＩＭ非線形素子とする。素子特性は動作範囲内に
於いて殆どタンタル−酸化タンタルの寄与とする事が出
来る。上電極４０７に重なるように画素電極４０８を形
成し工程を終える。First, a metal 403 containing aluminum as a main component and a metal 402 containing tantalum as a main component are continuously formed on a glass substrate 401 in an argon atmosphere in an amount of about 500 to 2000 Å and in an amount of about 1000 to 2000 Å in an argon atmosphere. A resist pattern 404 is formed here by an ordinary photolithography technique, and the metal 403 containing tantalum as a main component is patterned into a taper shape by using a dry etching method. After that, the lower layer metal 403 such as aluminum is patterned by wet etching to form a lower electrode and wiring having a laminated structure. Here, the first anodic oxidation is performed. A chemical conversion liquid such as ammonium tartrate is selected so that the anodic oxide film 405 of the lower metal layer such as aluminum does not become porous, and the chemical conversion voltage is set to a value higher than at least 30V. The anodization rate of tantalum is ~ 18Å / V, while
Since aluminum has a density of 13 Å / V, this anodic oxidation forms an aluminum oxide film of more than 390 Å on the side wall of aluminum, and tantalum is covered with tantalum oxide of more than 540 Å. In this state tantalum-
The side wall of aluminum is overhanging. After the first anodic oxidation, the tantalum anodic oxide film 404 is etched back by at least half the anodic oxide film thickness of tantalum by dry etching. Further, the tantalum 403 is subjected to the second anodic oxidation. The chemical conversion liquid in this case uses citric acid or phosphoric acid, etc.
Anodize at V. By passing through such a step, an overhang does not occur in the joint portion of the tantalum oxide 406 and the aluminum oxide 405, and a forward taper in which the upper electrode is not broken is realized. The upper electrode 407 is formed so as to intersect with the lower electrode formed in this way to form a MIM nonlinear element. The device characteristics can be almost the contribution of tantalum-tantalum oxide within the operating range. The pixel electrode 408 is formed so as to overlap the upper electrode 407, and the process is completed.
【００１３】[0013]
【発明の効果】本発明の非線形抵抗素子の構造をとるこ
とにより以下に述べる効果がある。The following effects are obtained by adopting the structure of the nonlinear resistance element of the present invention.
【００１４】１）アルミニウムを主成分とする金属とタ
ンタルを主成分とする金属の咳きそう構造により配線の
低抵抗化を図ることで、クロストークの無い表示品質の
高い液晶表示装置を提供することができる。1) To provide a liquid crystal display device having high display quality without crosstalk by reducing the resistance of wiring by a coughing structure of a metal containing aluminum as a main component and a metal containing tantalum as a main component. You can
【００１５】２）アルミニウムを主成分とする金属の陽
極酸化膜厚を厚くとることにより、素子特性は動作範囲
内に於いて、殆どタンタル−酸化タンタルの寄与分とす
る事が出来、高画質で大面積のＬＣＤが実現できる。2) By increasing the anodic oxide film thickness of the metal containing aluminum as the main component, the device characteristics can be almost the contribution of tantalum-tantalum oxide within the operating range, and high image quality can be obtained. A large-area LCD can be realized.
【００１６】３）タンタルを主成分とする金属を低抵抗
化のために厚く堆積する必要がなくなり、従ってターゲ
ット寿命が伸び、低コスト化が出来る。3) It is not necessary to deposit a metal containing tantalum as a main component thickly to reduce the resistance, so that the target life is extended and the cost can be reduced.
【００１７】４）アルミニウムを主成分とする金属の陽
極酸化膜をタンタルを主成分とする金属の陽極酸化膜よ
り厚く形成してオーバーハングを無くすることで上電極
の断線不良をなくせる。4) A metal anodic oxide film containing aluminum as a main component is formed to be thicker than a metal anodic oxide film containing tantalum as a main component to eliminate an overhang, thereby eliminating a disconnection defect of the upper electrode.
【００１８】５）このＭＩＭ非線形抵抗素子の構造を実
現するためのフォトマスクは、従来と同じ枚数で良い。5) The number of photomasks for realizing the structure of this MIM non-linear resistance element may be the same as the conventional number.
【００１９】即ち、歩留まりが高く、安価で表示品質の
高い大型液晶表示装置を提供できる。That is, it is possible to provide a large-sized liquid crystal display device which has a high yield, is inexpensive, and has a high display quality.
【図１】従来の技術によるＭＩＭ非線形抵抗素子アレイ
の一画素の外観図及び断面図。FIG. 1 is an external view and a cross-sectional view of one pixel of a conventional MIM nonlinear resistance element array.
【図２】本発明によるＭＩＭ非線形抵抗素子アレイの一
画素の外観図及び断面図。FIG. 2 is an external view and a cross-sectional view of one pixel of the MIM nonlinear resistance element array according to the present invention.
【図３】本発明によるＭＩＭ非線形抵抗素子の電圧−電
流特性図。FIG. 3 is a voltage-current characteristic diagram of the MIM nonlinear resistance element according to the present invention.
【図４】本発明によるＭＩＭ非線形抵抗素子の製造工程
を示す断面図。FIG. 4 is a cross-sectional view showing a manufacturing process of the MIM nonlinear resistance element according to the present invention.
１０１、２０１、４０１・・・素子基板 １０２、２０２、４０２・・・タンタル、或いはタンタ
ルを主成分とする金属 １０３、２０３、４０３・・・アルミニウム、或いはア
ルミニウムを主成分とする金属 １０４、２０４、４０５・・・タンタル、或いはタンタ
ルを主成分とする金属の陽極酸化膜 １０５、２０５、４０６・・・アルミニウム、或いはア
ルミニウムを主成分とする金属層の陽極酸化膜 ４０４・・・フォトレジスト １０６、２０６、４０７・・・上電極 １０７、２０７、４０８・・・画素電極101, 201, 401 ... Element substrate 102, 202, 402 ... Tantalum, or metal containing tantalum as a main component 103, 203, 403 ... Aluminum, or metal containing aluminum as a main component 104, 204, 405 ... Tantalum, or anodic oxide film of metal containing tantalum as a main component 105, 205, 406 ... Aluminum, or anodic oxide film of metal layer containing aluminum as a main component 404 ... Photoresist 106, 206 , 407 ... Upper electrode 107, 207, 408 ... Pixel electrode
Claims (5)
体−第２金属、或いは第１金属−絶縁体−透明導電体の
構造を持つ非線形抵抗素子に於いて、該第１金属が材質
の異なる複数の金属の積層構造で構成されることを特徴
とする非線形抵抗素子。1. A nonlinear resistance element having a structure of first metal-insulator-second metal or first metal-insulator-transparent conductor formed on an insulating material, wherein the first metal is A non-linear resistance element comprising a laminated structure of a plurality of metals made of different materials.
に於いて、該積層金属の材質により、陽極酸化膜厚が異
なる事を特徴とする請求項１に記載の非線形抵抗素子。2. The non-linear resistance element according to claim 1, wherein the non-linear resistance element formed on the insulating material has different anodic oxide film thickness depending on the material of the laminated metal.
に於いて、該第１金属がアルミニウムを主成分とする金
属、及びタンタルを主成分とする金属を順次積層した構
造を有することを特徴とする請求項１に記載の非線形抵
抗素子。3. A nonlinear resistance element formed on an insulating material, wherein the first metal has a structure in which a metal containing aluminum as a main component and a metal containing tantalum as a main component are sequentially laminated. The nonlinear resistance element according to claim 1.
に於いて、該積層金属の側面を覆う絶縁体の膜厚が、 酸化アルミニウム≧酸化タンタル の関係を満たしている事を特徴とする非線形抵抗素子。4. A non-linear resistance element formed on an insulating material, characterized in that the film thickness of the insulator covering the side surface of said laminated metal satisfies the relationship of aluminum oxide ≧ tantalum oxide. Resistance element.
造方法に於いて、少なくとも、 （１）アルミニウムを主成分とする金属、及びタンタル
を主成分とする金属を順次積層した該第１金属を陽極酸
化する工程と、 （２）上層のタンタルを主成分とする金属の陽極酸化膜
をエッチングする工程と、 （３）更に、タンタルを主成分とする金属を陽極酸化す
る工程を含むことを特徴とする非線形抵抗素子の製造方
法。5. A method for manufacturing a non-linear element formed on an insulating substrate, comprising: (1) a first metal in which a metal containing aluminum as a main component and a metal containing tantalum as a main component are sequentially laminated. And (2) etching the upper layer of an anodized film of a metal containing tantalum as a main component, and (3) further including a process of anodizing a metal containing tantalum as a main component. A method for manufacturing a characteristic nonlinear resistance element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16575193A JPH0720501A (en) | 1993-07-05 | 1993-07-05 | Non-linear resistance element and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16575193A JPH0720501A (en) | 1993-07-05 | 1993-07-05 | Non-linear resistance element and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0720501A true JPH0720501A (en) | 1995-01-24 |
Family
ID=15818383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16575193A Pending JPH0720501A (en) | 1993-07-05 | 1993-07-05 | Non-linear resistance element and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0720501A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0768722A1 (en) * | 1995-10-13 | 1997-04-16 | Ernst Prof. Dr.-Ing. habil. Lüder | Method of making an electronic switching element |
| US6350557B1 (en) * | 1997-07-31 | 2002-02-26 | Sharp Kabushiki Kaisha | Thin-film two-terminal elements, method of production thereof, liquid crystal display |
-
1993
- 1993-07-05 JP JP16575193A patent/JPH0720501A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0768722A1 (en) * | 1995-10-13 | 1997-04-16 | Ernst Prof. Dr.-Ing. habil. Lüder | Method of making an electronic switching element |
| US6350557B1 (en) * | 1997-07-31 | 2002-02-26 | Sharp Kabushiki Kaisha | Thin-film two-terminal elements, method of production thereof, liquid crystal display |
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