JPH07207449A - Method for manufacturing laminated body - Google Patents

Method for manufacturing laminated body

Info

Publication number
JPH07207449A
JPH07207449A JP571594A JP571594A JPH07207449A JP H07207449 A JPH07207449 A JP H07207449A JP 571594 A JP571594 A JP 571594A JP 571594 A JP571594 A JP 571594A JP H07207449 A JPH07207449 A JP H07207449A
Authority
JP
Japan
Prior art keywords
gas
plasma
metal electrodes
atmospheric pressure
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP571594A
Other languages
Japanese (ja)
Inventor
Motokazu Yuasa
基和 湯浅
Shigemasa Kawai
重征 河合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP571594A priority Critical patent/JPH07207449A/en
Publication of JPH07207449A publication Critical patent/JPH07207449A/en
Pending legal-status Critical Current

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  • Other Surface Treatments For Metallic Materials (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

(57)【要約】 【目的】大気圧近傍の圧力下で低電圧にて基材のプラズ
マ表面処理を行って、表面性能に優れた積層体を製造す
る方法を提供する。 【構成】一対の相対する金属電極4,5の少なくとも一
方の対向面に比導電率が10以上で且つチタン酸系化合
物を含む固体導電体6が完全に電極表面を覆うように配
設する。金属電極4,5間に処理すべき基材7を装着す
る。不活性ガス及び反応ガスを金属電極4,5間の空間
に導入する。大気圧近傍の圧力下で金属電極4,5に電
圧を印加して放電プラズマを起こさせ、励起した活性種
を基材表面に接触させて表面処理を行う。
(57) [Summary] [Object] To provide a method for producing a laminate having excellent surface performance by subjecting a substrate to plasma surface treatment at a low voltage under a pressure near atmospheric pressure. A solid conductor 6 having a specific conductivity of 10 or more and containing a titanic acid compound is disposed on at least one opposing surface of a pair of opposing metal electrodes 4 and 5 so as to completely cover the electrode surface. A base material 7 to be treated is mounted between the metal electrodes 4 and 5. An inert gas and a reaction gas are introduced into the space between the metal electrodes 4 and 5. A voltage is applied to the metal electrodes 4 and 5 under a pressure near atmospheric pressure to generate discharge plasma, and the excited active species are brought into contact with the surface of the base material for surface treatment.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、大気圧近傍の圧力下で
低電圧にて基材のプラズマ表面処理を行って、表面性能
に優れた積層体を製造する方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a laminate having excellent surface performance by subjecting a substrate to plasma surface treatment at a low voltage under a pressure near atmospheric pressure.

【0002】[0002]

【従来の技術】従来より、固体表面の濡れ性制御や表面
修飾の方法として、0.1Torr以上10Torr未
満の低圧力下でグロー放電プラズマにより表面処理を行
う方法が知られており、産業的にも応用されている。こ
の場合に、これよりも高い圧力にて固体表面の表面処理
を行うと、放電が局所的になりアーク放電に移行してし
まうので、耐熱性の乏しいプラスチック基材の表面処理
には適用することができない。
2. Description of the Related Art Conventionally, as a method of controlling the wettability of a solid surface and modifying the surface, a method of performing surface treatment by glow discharge plasma under a low pressure of 0.1 Torr or more and less than 10 Torr is known, and is industrially used. Has also been applied. In this case, if the surface treatment of the solid surface is carried out at a pressure higher than this, the discharge will be localized and it will shift to arc discharge, so it should be applied to the surface treatment of plastic substrates with poor heat resistance. I can't.

【0003】そのため、容器は高価な真空チャンバーを
必要とし、又、真空排気装置が必要となる。更に、真空
中で処理するため、大面積の基材を処理しようとする
と、真空チャンバーの容量を大きくしなければならず、
且つ、真空排気装置も大出力のものが必要となり、設備
が極めて高価なものとなってしまう。又、吸水率の高い
プラスチック基材の表面処理を行う場合には、真空引き
に長時間を要し、処理品がコスト高となるという問題点
もある。
Therefore, the container requires an expensive vacuum chamber and also an evacuation device. Furthermore, since it is processed in a vacuum, when processing a large-area substrate, the capacity of the vacuum chamber must be increased,
In addition, the vacuum exhaust device also needs to have a large output, and the equipment becomes extremely expensive. In addition, when the surface treatment of a plastic substrate having a high water absorption rate is performed, it takes a long time to evacuate, and the cost of the treated product becomes high.

【0004】そこで、このような問題点に対処するた
め、例えば、特開平2─15171号公報には、上部電
極及び下部電極の表面に固体誘電体を配設してなる二重
誘電体被覆電極を有する反応容器内に、希ガスとモノマ
ー気体を混合して導入し、大気圧下にプラズマ励起させ
て基体表面を処理する大気圧プラズマ反応方法が提案さ
れている。
Therefore, in order to deal with such a problem, for example, Japanese Unexamined Patent Publication No. 2-15171 discloses a double-dielectric-coated electrode in which a solid dielectric is provided on the surfaces of an upper electrode and a lower electrode. There has been proposed an atmospheric pressure plasma reaction method in which a rare gas and a monomer gas are mixed and introduced into a reaction container having the above, and plasma is excited under atmospheric pressure to treat the substrate surface.

【0005】又、特開平2─48626号公報には、複
数の細線からなる上部電極を有する反応容器内に、不活
性ガスと混合して導入したモノマー気体を大気圧下にプ
ラズマ状として基体表面に薄膜形成する薄膜成形法が提
案されている。
Further, in Japanese Unexamined Patent Publication No. 2-48626, a monomer gas mixed with an inert gas and introduced into a reaction vessel having an upper electrode composed of a plurality of thin wires is converted into a plasma state under atmospheric pressure, and the surface of the substrate is treated. A thin film forming method for forming a thin film has been proposed.

【0006】又、特開平2─73979号公報には、互
いに対向したふたつの電極の対向面の少なくとも一方に
1011Ωcm以上の高抵抗体を配置し、高抵抗体の表面
に成膜しようとする薄膜の構成元素のうち少なくともひ
とつの元素からなる材料を被覆し、この高抵抗体に対向
した電極もしくは高抵抗体上に、試料基材を配置し、膜
形成用ガスとヘリウムからなる混合ガスを試料基材上の
放電空間に供給し、大気圧近傍の圧力下で、対向電極に
与えた高周波放電によりグロー放電を起こさせ、試料基
材上に薄膜を形成する薄膜形成法が提案されている。
Further, in Japanese Patent Laid-Open No. 2-73979, a high resistance element of 10 11 Ωcm or more is arranged on at least one of the facing surfaces of two electrodes facing each other, and an attempt is made to form a film on the surface of the high resistance element. A material consisting of at least one of the constituent elements of the thin film is coated, and the sample substrate is placed on the electrode facing the high resistance or on the high resistance, and a mixed gas consisting of the film forming gas and helium. A thin film forming method has been proposed in which a thin film is formed on a sample substrate by supplying a gas to a discharge space on the sample substrate and causing a glow discharge by a high frequency discharge applied to a counter electrode under a pressure near atmospheric pressure. There is.

【0007】[0007]

【発明が解決しようとする課題】しかし、上記の方法
は、いずれも、アーク放電防止のため、少なくとも一方
の電極上にガラス、セラミック、プラスチック等が配設
されている。これら材料は比導電率が一桁の低導電率材
料であるため、放電を起こさせ表面処理を行うためには
高電圧をかける必要があった。
However, in any of the above methods, glass, ceramics, plastics, etc. are provided on at least one electrode to prevent arc discharge. Since these materials are low-conductivity materials having a specific conductivity of one digit, it was necessary to apply a high voltage in order to cause discharge and perform surface treatment.

【0008】本発明は、上記の如き従来の問題点を解消
し、大気圧近傍の圧力下で低電圧で放電プラズマを発生
させ、プラズマによる表面処理を短時間で行うことがで
き、且つ、表面性能に優れた積層体を得ることができる
積層体の製造方法を提供することを目的としてなされた
ものである。
The present invention solves the above conventional problems, discharge plasma is generated at a low voltage under a pressure near atmospheric pressure, and surface treatment with plasma can be performed in a short time. The object of the present invention is to provide a method for producing a laminated body that can obtain a laminated body with excellent performance.

【0009】[0009]

【課題を解決するための手段】本発明は、一対の相対す
る金属電極の少なくとも一方の対向面に比導電率が10
以上で且つチタン酸系化合物を含む固体導電体が完全に
電極表面を覆うように配設された金属電極間に処理すべ
き基材を設置し、不活性ガス及び反応ガスを金属電極間
の空間に導入し、大気圧近傍の圧力下で金属電極に電圧
を印加して放電プラズマを起こさせ、そのプラズマによ
って励起される活性種を基材表面に接触させてその表面
処理を行う積層体の製造方法である。
According to the present invention, a specific conductivity is 10 on at least one opposing surface of a pair of opposing metal electrodes.
The base material to be treated is placed between the metal electrodes arranged so that the solid conductor containing the titanic acid-based compound completely covers the electrode surface, and an inert gas and a reaction gas are provided in the space between the metal electrodes. And a voltage is applied to the metal electrode under a pressure near the atmospheric pressure to generate discharge plasma, and the active species excited by the plasma are brought into contact with the surface of the substrate for surface treatment. Is the way.

【0010】本発明において表面処理とは、例えば、基
材の表面に表面官能基層を形成したり、フリーラジカル
層を形成したり、親水性や撥水性を付与し表面エネルギ
ーを制御したり、基材の濡れ性や接着性を改善したり、
光学的、電気的、機械的等の機能を有する薄膜を表面に
形成すること等をいう。
In the present invention, the surface treatment means, for example, forming a surface functional group layer on the surface of a substrate, forming a free radical layer, imparting hydrophilicity or water repellency to control the surface energy, Improve the wettability and adhesion of materials,
Forming a thin film having optical, electrical, mechanical, etc. functions on the surface.

【0011】例えば、基材表面にフッ素を化学結合させ
表面エネルギーを低くし撥水性を付与する場合には、フ
ッ素含有のガスを供給する。含フッ素ガスとしては、例
えば、4フッ化炭素(CF4 )、6フッ化炭素(C 2
6 )、4フッ化炭素等のフッ化炭素化水素ガス、1塩素
化3フッ化炭素(CClF3 )等の塩素化フッ化炭素ガ
ス等のハロゲン化炭化水素ガス、6フッ化硫黄(S
6 )などが挙げられ、安全でフッ化水素等の有害なガ
スを生成しない4フッ化炭素(CF4 )、6フッ化炭素
(C2 6 )などが好ましい。
For example, by chemically bonding fluorine to the surface of the base material,
For low surface energy and water repellency,
A gas containing nitrogen is supplied. Examples of fluorine-containing gas
For example, carbon tetrafluoride (CFFour), Carbon hexafluoride (C 2F
6) Fluorocarbon gas such as tetrafluorocarbon, 1 chlorine
Carbon trifluoride (CClF3) Chlorinated fluorocarbon gas
Halogenated hydrocarbon gas such as sulfur, sulfur hexafluoride (S
F6), Etc., and is a safe and harmful gas such as hydrogen fluoride.
Carbon tetrafluoride (CF)Four), Carbon hexafluoride
(C2F6) And the like are preferable.

【0012】又、逆に、表面エネルギーを高くし親水性
を付与する場合には、表面にカルボニル基、ヒドロキシ
ル基、アミノ基等の官能基を有する層を成形するため
に、炭化水素化合物のガスや蒸気、例えば、メタン、エ
タン、プロパン、ブタン、ペンタン、ヘキサン等のアル
カン系ガス類、エチレン、プロピレン、ブテン、ペンテ
ン等のアルケン系ガス類、ペンタジエン、ブタジエン等
のアルカジエン系ガス類、アセチレン、メチルアセチレ
ン等のアルキン系ガス類、ベンゼン、トルエン、キシレ
ン、インデン、ナフタレン、フェナントレン等の芳香族
炭化水素系ガス類、シクロプロパン、シクロヘキサン等
のシクロアルカン系ガス類、シクロペンテン、シクロヘ
キセン等のシクロアルケン系ガス類、メタノール、エタ
ノール等のアルコール系ガス類、アセトン、メチルエチ
ルケトン等のケトン系ガス類、メタナール、エタナール
等のアルデヒド系ガス類などが挙げられ、これらは、単
独で使用されてもよいし、2種以上併用されてもよい。
又、酸素ガス、酸素と水素の混合ガス、水蒸気、アンモ
ニアガス等を使用することも可能である。
On the contrary, in the case of increasing the surface energy and imparting hydrophilicity, a gas of a hydrocarbon compound is used to form a layer having a functional group such as a carbonyl group, a hydroxyl group and an amino group on the surface. Or steam, for example, alkane-based gases such as methane, ethane, propane, butane, pentane, and hexane, alkene-based gases such as ethylene, propylene, butene, and pentene, alkadiene-based gases such as pentadiene and butadiene, acetylene, methyl Alkyne-based gases such as acetylene, aromatic hydrocarbon-based gases such as benzene, toluene, xylene, indene, naphthalene and phenanthrene, cycloalkane-based gases such as cyclopropane and cyclohexane, cycloalkene-based gases such as cyclopentene and cyclohexene Alcohol such as methanol, ethanol, etc. System gases, acetone, ketone-based gas such as methyl ethyl ketone, methanal, include such aldehyde gas such as ethanal, These may be used alone or may be used in combination of two or more.
It is also possible to use oxygen gas, a mixed gas of oxygen and hydrogen, steam, ammonia gas, or the like.

【0013】又、酸化珪素、酸化チタン、酸化錫等の金
属酸化物薄膜を形成する場合には、金属水素ガス、金属
ハロゲン化ガス、金属アルコラート等の金属有機化合物
からなるガスを用いることができる。
When forming a metal oxide thin film of silicon oxide, titanium oxide, tin oxide or the like, a gas composed of a metal organic compound such as metal hydrogen gas, metal halogenated gas, metal alcoholate or the like can be used. .

【0014】本発明において、表面処理部は、少なくと
も一方の対向面に比誘電率が10以上で且つチタン酸化
合物を含む固体誘電体が配設された一対の相対する金属
電極間に形成される。尚、本発明における比誘電率は2
5℃環境下での値をいう(以下同様)。比誘電率が10
未満の固体誘電体を用いた場合には、表面処理を行うた
めに高電圧が必要となり、表面処理に時間がかかる。
In the present invention, the surface-treated portion is formed between a pair of opposing metal electrodes in which a solid dielectric having a relative dielectric constant of 10 or more and containing a titanate compound is disposed on at least one of the opposing surfaces. . The relative dielectric constant in the present invention is 2
It means the value under 5 ° C environment (the same applies below). Relative permittivity is 10
When a solid dielectric material of less than 1 is used, a high voltage is required to perform the surface treatment, and the surface treatment takes time.

【0015】チタン系化合物は強誘電率材料として知ら
れており、酸化チタン単独の場合、結晶構造で比誘電率
が異なり、ルチル結晶構造の酸化チタンで比誘電率は約
80程度である。又、バリウム、ストロンチウム、鉛、
カルシウム、マグネシウム、亜鉛等の金属の酸化物から
選ばれた少なくとも1種以上と酸化チタンとの化合物と
することによって、比誘電率は10以上に制御される。
Titanium-based compounds are known as ferroelectric materials. When titanium oxide alone is used, the relative dielectric constant differs depending on the crystal structure. Titanium oxide having a rutile crystal structure has a relative dielectric constant of about 80. In addition, barium, strontium, lead,
The relative permittivity is controlled to 10 or more by using a compound of titanium oxide and at least one selected from oxides of metals such as calcium, magnesium and zinc.

【0016】例えば、チタン酸バリウムは比誘電率は約
2,000〜18,500であり、比誘電率は純度や結
晶性によっても変化可能である。これらチタン酸系化合
物は単独で用いてもよく、又、他の金属酸化物や有機物
と混合して用いてもよい。
For example, barium titanate has a relative dielectric constant of about 2,000 to 18,500, and the relative dielectric constant can be changed depending on the purity and crystallinity. These titanic acid compounds may be used alone, or may be used as a mixture with other metal oxides or organic substances.

【0017】混合する場合は、上記チタン酸系化合物粉
体に他の材料の粉末を添加し、各種プレス、抄造法、キ
ャスト等の公知の方法で塊状物に形成し、更に必要に応
じて焼結させる方法等が挙げられる。
In the case of mixing, powders of other materials are added to the above-mentioned titanic acid compound powder, and formed into a lump by a known method such as various press, papermaking method, casting, etc., and further baked if necessary. Examples of the method include binding.

【0018】又、上記強誘電率材料は、プラスチック、
ガラス、セラミック等の他の塊状の固体誘電体として積
層しても構わない。低比誘電率材料を積層する場合、低
誘電率材料の厚みは、チタン酸系化合物の誘電率にもよ
るが、厚すぎると放電しにくくなるため、薄い方が好適
であり2mm以下が好ましい。
The ferroelectric material is plastic,
It may be laminated as another solid bulk dielectric such as glass or ceramic. When a low relative dielectric constant material is laminated, the thickness of the low dielectric constant material depends on the dielectric constant of the titanic acid-based compound, but if it is too thick, it is difficult to discharge, so a thinner thickness is preferable, and a thickness of 2 mm or less is preferable.

【0019】又、上記の強誘電率材料は、粉体状でも構
わない。その場合には、導電率が10-8S/m以下の容
器中に、比誘電率が10以上のチタン酸系化合物を含む
粉体を充填し、電極表面を完全に覆うように配設する。
導電率が10-8S/mを超える容器を用いた場合には、
アーク放電が生じてしまう。
The ferroelectric material may be in powder form. In that case, a container having a conductivity of 10 −8 S / m or less is filled with a powder containing a titanic acid compound having a relative dielectric constant of 10 or more, and the container is arranged so as to completely cover the electrode surface. .
When using a container whose conductivity exceeds 10 -8 S / m,
Arc discharge will occur.

【0020】導電率10-8S/m以下の容器としては、
ポリテトラフルオロエチレン、ポリイミド、ポリエチレ
ンテレフタレート、ポリスチレン等のプラスチック、石
英ガラス、ほう珪酸ガラス、ソーダガラス等のガラス、
アルミナ等のセラミック等で作られた容器が挙げられ、
中に粉体充填可能な上面─底面─側面を有する容器が用
いられる。
As a container having an electric conductivity of 10 -8 S / m or less,
Plastics such as polytetrafluoroethylene, polyimide, polyethylene terephthalate and polystyrene, quartz glass, borosilicate glass, glass such as soda glass,
Examples include containers made of ceramics such as alumina.
A container having a top surface-bottom surface-side surface into which powder can be filled is used.

【0021】容器の肉厚は、容器の材質、印加電圧及び
中に充填される粉体の比誘電率等により適宜決定される
が、厚すぎると放電が発生し難いため上面肉厚と底面肉
厚の合計が5mm以下が好ましいが、側面の肉厚は放電
発生には関与しない。
The wall thickness of the container is appropriately determined depending on the material of the container, the applied voltage, the relative dielectric constant of the powder filled therein, and the like. The total thickness is preferably 5 mm or less, but the side wall thickness does not contribute to the occurrence of discharge.

【0022】容器の高さも、容器の材質、印加電圧及び
中に充填される粉体の比誘電率等により適宜決定される
が、0.1〜20mmが好ましい。高さが20mmを超
えると、放電し難くなり、逆に、0.1mm未満である
と、アーク放電に移行し易くなる。
The height of the container is also appropriately determined depending on the material of the container, the applied voltage, the relative dielectric constant of the powder filled therein, and the like, but is preferably 0.1 to 20 mm. If the height exceeds 20 mm, it becomes difficult to discharge, and conversely, if the height is less than 0.1 mm, the arc discharge easily occurs.

【0023】容器の形状は方形でも円筒状でも構わな
い。又、これらの容器は、上面─側面─底面の材質が異
なっていても何等問題ない。容器の中に充填される粉体
は平均粒径が小さい程容器内に密に充填されるため、平
均粒径5μm以下が好ましい。
The shape of the container may be square or cylindrical. Further, these containers have no problem even if the materials of the upper surface, the side surface and the bottom surface are different. The smaller the average particle size of the powder filled in the container is, the denser the powder is packed in the container. Therefore, the average particle size is preferably 5 μm or less.

【0024】チタン酸系化合物の固体誘電層の厚みは材
料にもよるが、薄い方が放電はし易いが過剰に薄すぎる
とアーク放電が生じ易く、逆に、厚すぎると誘電喪失が
大きくなり放電プラズマが発生し難く且つ高温度になる
ため、0.01〜4mmが好ましい。
The thickness of the solid dielectric layer of the titanic acid-based compound depends on the material, but the thinner the layer is, the easier the discharge is. However, if it is too thin, arc discharge easily occurs. Conversely, if it is too thick, the dielectric loss becomes large. Since it is difficult to generate discharge plasma and the temperature becomes high, 0.01 to 4 mm is preferable.

【0025】又、これら塊状物は必ずしも均一な厚みを
要しないが、厚みが均一な方が均一な放電プラズマが得
られるので好ましい。固体誘電体は緻密でも多孔質でも
構わず、誘電体設置の電極の表面が全て被覆してあれば
よい。つまり、誘電体自身のシートやフィルムでもよい
し、又、金属上に蒸着、スパッタリング、CVD又は溶
射等の物理的、化学的コーティング法で被覆したもので
あってもよい。尚、誘電体層が薄い場合には、シート状
物の入手は難しいので、上記コーティング法で被覆した
ものが用いられる。
Further, although these lumps do not necessarily require a uniform thickness, a uniform thickness is preferable because a uniform discharge plasma can be obtained. The solid dielectric may be dense or porous as long as the entire surface of the electrode provided with the dielectric is covered. That is, it may be a sheet or film of the dielectric itself, or may be a metal coated with a physical or chemical coating method such as vapor deposition, sputtering, CVD or thermal spraying. If the dielectric layer is thin, it is difficult to obtain a sheet-like material, so that the one coated by the above coating method is used.

【0026】金属電極配置構造としては、平行平板型、
円軸円筒型、円筒対向平板型、球対向平板型、双局面対
向平板型、複数の細線からなるもの等が挙げられるが、
用途に応じて適宜決定される。
The metal electrode arrangement structure is a parallel plate type,
Examples include a circular axis cylindrical type, a cylinder facing flat plate type, a sphere facing flat plate type, a double-sided facing flat plate type, and a plurality of thin wires.
It is appropriately determined according to the application.

【0027】本発明において、基材は、特に材質や形状
等は限定されない。基材の材質としては、プラスチッ
ク、金属、ガラス、セラミック、セメント、紙、繊維等
が挙げられ、緻密であってもよいし、多孔質であっても
よい。9プラスチックとしては、例えば、ポリエチレン
テレフタレート、ポリエチレンナフタレート等のポリエ
ステル、ポリエチレン、ポリプロピレン等のポリオレフ
ィン、ポリスチレン、ポリアミド、ポリ塩化ビニル、ポ
リカーボネート、ポリアクリロニトリル等が挙げられ
る。
In the present invention, the material and shape of the base material are not particularly limited. Examples of the material of the base material include plastic, metal, glass, ceramics, cement, paper and fibers, which may be dense or porous. Examples of 9 plastics include polyesters such as polyethylene terephthalate and polyethylene naphthalate, polyolefins such as polyethylene and polypropylene, polystyrene, polyamide, polyvinyl chloride, polycarbonate, polyacrylonitrile and the like.

【0028】基材の形状は、フィルムやシートであって
もよいし、又、公知の処理を施し、表面洗浄や表面活性
化の処理を行ったものであってもよい。フィルムの場合
には、延伸したものであってもよいし、又、未延伸のも
のであってもよい。
The substrate may be in the form of a film or sheet, or may be one that has been subjected to a known treatment and subjected to surface cleaning or surface activation treatment. In the case of a film, it may be stretched or unstretched.

【0029】金属等の導電性の基材を処理する場合に
は、アーク放電防止のため、必ず両電極に誘電体を配置
する必要がある。尚、両電極に上記のチタン酸系化合物
を含む固体誘電体を配置してもよい。又、一方の電極に
のみ上記の固体誘電体を配置し、他方には酸化珪素、酸
化アルミニウム等のガラスやセラミック製の誘導体、異
なる組成のチタン酸系化合物の強誘電体等の固体誘電体
を配置しても構わない。
When treating a conductive base material such as metal, it is necessary to dispose a dielectric on both electrodes in order to prevent arc discharge. In addition, you may arrange | position the solid dielectric material containing the said titanic acid type compound to both electrodes. In addition, the above-mentioned solid dielectric is arranged only on one electrode, and on the other, a glass or ceramic derivative such as silicon oxide or aluminum oxide, or a solid dielectric such as a ferroelectric of a titanic acid-based compound having a different composition. You can place it.

【0030】以下、本発明の積層体の製造方法の一例と
して、プラスチック表面に撥水性付与を行う場合につい
て、図面を参照して説明する。図1は、本発明に使用す
る大気圧プラズマ表面処理装置の一例を示す一部断面図
である。
As an example of the method for producing a laminate of the present invention, a case of imparting water repellency to a plastic surface will be described below with reference to the drawings. FIG. 1 is a partial cross-sectional view showing an example of an atmospheric pressure plasma surface treatment apparatus used in the present invention.

【0031】この装置は、低周波電源部1、処理容器
2、上部金属電極4、下部金属電極5から構成されてい
る。低周波電源部1は、kHz台の周波数の電源を印加
可能であるが、耐熱性の低い基材に撥水性を付与するに
は10〜30kHzの低周波数が好ましい。プラズマ形
成は、電圧の印加によって行うが、電界強度1〜40k
V/cm程度となるように電圧を印加するのが好まし
い。電界強度が1kV/cm未満であると、プラズマ密
度及びセルフバイアスが小さくなるので、処理に時間が
かかり非能率的であり、逆に、電界強度が40kV/c
mを超えると、誘電体が高温になりアーク放電に移行す
る挙動を示す。
This apparatus comprises a low-frequency power source unit 1, a processing container 2, an upper metal electrode 4 and a lower metal electrode 5. The low-frequency power source unit 1 can apply a power source with a frequency on the order of kHz, but a low frequency of 10 to 30 kHz is preferable in order to impart water repellency to a substrate having low heat resistance. Plasma formation is performed by applying a voltage, but the electric field strength is 1 to 40 k.
It is preferable to apply the voltage so as to be about V / cm. When the electric field strength is less than 1 kV / cm, the plasma density and the self-bias are small, so that the treatment takes time and is inefficient, and conversely, the electric field strength is 40 kV / c.
When it exceeds m, the dielectric substance becomes hot and exhibits a behavior of transition to arc discharge.

【0032】処理容器2はパイレックスガラス製である
が、電極と絶縁がとれているならば、ステンレスやアル
ミニウム等の金属製であっても構わない。一対の相対す
る上部金属電極4と下部金属電極5との間の空間に、グ
ロー放電プラズマによる表面処理部3が形成される。上
部金属電極4は多孔構造からなる。下部金属電極5は上
部金属電極4との対向面の全面を覆うように固体誘電体
6が設置されている。
The processing container 2 is made of Pyrex glass, but may be made of metal such as stainless steel or aluminum as long as it is insulated from the electrodes. A surface treatment part 3 by glow discharge plasma is formed in a space between a pair of opposing upper and lower metal electrodes 4 and 5. The upper metal electrode 4 has a porous structure. The lower metal electrode 5 is provided with the solid dielectric 6 so as to cover the entire surface facing the upper metal electrode 4.

【0033】表面処理すべきプラスチック基材7は固体
誘電体6上に装着されて表面処理がなされる。つまり、
プラスチック基材7は装着された片面(図中では上面)
のみが表面処理される。尚、基材両面の処理が必要なら
ば、金属電極4,5間に浮かせる必要がある。
The plastic substrate 7 to be surface-treated is mounted on the solid dielectric 6 and surface-treated. That is,
The plastic substrate 7 is mounted on one side (upper surface in the figure)
Only the surface is treated. If treatment of both sides of the base material is required, it is necessary to float between the metal electrodes 4 and 5.

【0034】金属電極4,5は、ステンレス、真鍮等の
多成分系の金属からなるものでもよいし、銅、アルミニ
ウム等の純金属からなるものでもよい。放電間の距離
は、反応ガスのガス流量や印加電圧の大きさ、又、処理
基材の厚みによって適宜決定されるが、1〜20mmが
好ましい。距離が20mmを超えると、金属電極空間の
ガスの均一性が損なわれ易く、逆に、1mm未満である
と、未使用の反応ガスが多くなり非能率となり易い。
The metal electrodes 4 and 5 may be made of a multi-component metal such as stainless steel or brass, or may be made of a pure metal such as copper or aluminum. The distance between the discharges is appropriately determined depending on the gas flow rate of the reaction gas, the magnitude of the applied voltage, and the thickness of the treated substrate, but is preferably 1 to 20 mm. If the distance exceeds 20 mm, the uniformity of the gas in the metal electrode space is likely to be impaired, and conversely, if it is less than 1 mm, the amount of unused reaction gas increases and the efficiency tends to increase.

【0035】処理用反応ガスは図示しないガスフローコ
ントローラーで流量制御し、反応ガス導入管8を経て多
孔構造の上部金属電極4から表面処理部3に供給され
る。不活性ガスや表面処理用反応ガスは混合して上部金
属電極4から導入しても構わないが、均一性よく撥水性
を付与するためには、反応ガスのみを上部金属電極4か
ら導入し、不活性ガスは不活性ガス導入管9から導入す
るのが好ましい。未使用の反応ガス、不活性ガスは容器
のガス出口10から排出する。尚、11は容器2内に反
応ガス及び不活性ガス導入する際に、処理容器2内に残
存する空気を排出するための排気口である。
The flow rate of the reaction gas for treatment is controlled by a gas flow controller (not shown), and is supplied from the upper metal electrode 4 having a porous structure to the surface treatment section 3 through the reaction gas introduction pipe 8. The inert gas and the reaction gas for surface treatment may be mixed and introduced from the upper metal electrode 4, but in order to impart water repellency with good uniformity, only the reaction gas is introduced from the upper metal electrode 4, The inert gas is preferably introduced through the inert gas introduction pipe 9. Unused reaction gas and inert gas are discharged from the gas outlet 10 of the container. Reference numeral 11 denotes an exhaust port for discharging the air remaining in the processing container 2 when the reaction gas and the inert gas are introduced into the container 2.

【0036】撥水性付与のための表面処理用反応ガスと
しては、フッ素含有ガスが好適に使用される。プラスチ
ック基材7の表面処理は不活性ガス雰囲気の大気圧近傍
の圧力にて行う。大気圧近傍の圧力とは、100〜80
0Torrのことであり、装置、設備の低コスト化を考
慮すると、700〜770Torrがより好ましい。
A fluorine-containing gas is preferably used as the surface-treating reaction gas for imparting water repellency. The surface treatment of the plastic base material 7 is performed at a pressure near the atmospheric pressure in an inert gas atmosphere. The pressure near atmospheric pressure is 100 to 80
It is 0 Torr, and 700 to 770 Torr is more preferable in view of cost reduction of the device and equipment.

【0037】不活性ガスとしては、ヘリウム、ネオン、
アルゴン、クセノン等の希ガスや窒素ガス等が単独で又
は混合ガスとして用いられるが、準安定状態の寿命が長
く反応ガスを励起分解するのに有利なヘリウムガスを用
いるのが好ましい。ヘリウムガス以外の不活性ガスを用
いる場合には、2体積%以内のアセトン、メタノール等
の有機物蒸気や、メタン、エタン等の炭化水素ガスを混
合する必要がある。
As the inert gas, helium, neon,
A rare gas such as argon or xenon, a nitrogen gas, or the like is used alone or as a mixed gas, and it is preferable to use a helium gas which has a long metastable state life and is advantageous in excitating and decomposing the reaction gas. When an inert gas other than helium gas is used, it is necessary to mix an organic vapor such as acetone or methanol within 2% by volume or a hydrocarbon gas such as methane or ethane.

【0038】不活性ガスと含フッ素ガスとの混合比は、
含フッ素ガス10体積%を超えるとしく、高電圧を印加
しても撥水性付与に良好な放電プラズマが発生しないた
め、10体積%以下が好ましく、反応ガスの消費量を少
なく撥水性を付与可能な0.3〜5.0体積%が特に好
ましい。
The mixing ratio of the inert gas and the fluorine-containing gas is
It seems that the content of fluorine-containing gas exceeds 10% by volume, and discharge plasma which is good for imparting water repellency does not occur even when a high voltage is applied. 0.3 to 5.0% by volume is particularly preferable.

【0039】撥水性のための大気圧プラズマ処理は基材
の加熱や冷却の必要なく室温下で充分可能である。又、
処理時間は印加電圧の大きさで決定され、前記印加電圧
の範囲では5秒程度で撥水化されており、それ以上の時
間をかけて処理しても撥水効果は向上せず、短期間の処
理で充分である。
The atmospheric pressure plasma treatment for water repellency is sufficiently possible at room temperature without the need to heat or cool the substrate. or,
The treatment time is determined by the magnitude of the applied voltage. Within the range of the applied voltage, the treatment is made water repellent in about 5 seconds, and even if the treatment is performed for a longer time, the water repellent effect is not improved, and the treatment is performed for a short period of time. Is sufficient.

【0040】[0040]

【作用】本発明の積層体の製造方法は、一対の相対する
金属電極の少なくとも一方の対向面に比導電率が10以
上で且つチタン酸系化合物を含む固体導電体が完全に電
極表面を覆うように配設された金属電極間に処理すべき
基材を設置し、不活性ガス及び反応ガスを金属電極間の
空間に導入し、大気圧近傍の圧力下で金属電極に電圧を
印加して放電プラズマを起こさせ、そのプラズマによっ
て励起される活性種を基材表面に接触させてその表面処
理を行うことにより、従来の低圧グロー放電プラズマに
よる基材の表面処理法と比べて特別な真空形成のための
装置・設備を必要とせず、真空形成のための特別な操作
を要することもなく、又、大気圧プラズマの課題であっ
た高電力を必要とせずに、低い印加電圧で且つ短時間に
て各種基材の表面処理を行い、表面特性の優れた積層体
を容易に且つ安価に製造することができる。
According to the method for producing a laminate of the present invention, a solid conductor having a specific conductivity of 10 or more and containing a titanic acid-based compound completely covers the electrode surface on at least one opposing surface of a pair of opposing metal electrodes. The substrate to be treated is placed between the metal electrodes arranged as described above, an inert gas and a reaction gas are introduced into the space between the metal electrodes, and a voltage is applied to the metal electrodes under a pressure near atmospheric pressure. A special vacuum is formed compared with the conventional surface treatment method of the substrate by low pressure glow discharge plasma by generating discharge plasma and bringing the active species excited by the plasma into contact with the substrate surface for surface treatment. No need for special equipment for vacuum formation, no special operation for vacuum formation, no need for high power, which was a problem of atmospheric pressure plasma, low applied voltage and short time At the surface of various substrates Performs management, excellent laminate surface properties can be easily and inexpensively manufactured.

【0041】[0041]

【実施例】以下、本発明を実施例により説明する。実施例1 図1に示した装置(金属電極直径80mm)を用い、直
径80mm×厚み100μmの円形のポリエステルフィ
ルム(東レ社製、商品名「ルミラーS10」)からなる
基材を、直径120mm×厚み2mmのチタン酸バリウ
ム(比誘電率約15,000)が配設された下部金属電
極上に装着し、金属電極間距離約15mmに設定後、1
Torrまで油回転ポンプで排気した。
EXAMPLES The present invention will be described below with reference to examples. Example 1 Using the apparatus shown in FIG. 1 (metal electrode diameter 80 mm), a substrate made of a circular polyester film having a diameter of 80 mm and a thickness of 100 μm (manufactured by Toray Industries, Inc., trade name “Lumirror S10”) was used, having a diameter of 120 mm and a thickness of 120 mm. 2 mm barium titanate (relative permittivity: about 15,000) was mounted on the lower metal electrode, and the distance between the metal electrodes was set to about 15 mm.
The oil rotary pump exhausted to Torr.

【0042】次いで、ガス流量2sccmの4フッ化炭
素ガスを反応ガス導入管8を経て多孔構造の金属電極4
より、又、ガス流量198sccmのヘリウムガスを不
活性ガス導入管9より処理容器2内に導入し、760T
orrの大気圧とした後、周波数15kHzで、2.1
kV、40.5mAの電力を印加し、10秒間放置し
た。電圧印加にともなって、プラズマ発光が観察され
た。
Then, a carbon tetrafluoride gas having a gas flow rate of 2 sccm is passed through the reaction gas introducing pipe 8 and the metal electrode 4 having a porous structure.
In addition, helium gas with a gas flow rate of 198 sccm was introduced into the processing container 2 through the inert gas introduction pipe 9, and 760T
After setting the atmospheric pressure to orr, at a frequency of 15 kHz, 2.1
Power of kV and 40.5 mA was applied and left for 10 seconds. Plasma emission was observed with the application of voltage.

【0043】処理面は純水に対する接触角測定を行っ
た。その結果、プラズマが当たった領域で100〜10
8度を示し撥水化されていることが明らかとなった。
尚、使用した基材の接触角は65度であった。又、処理
部を、X線電子分光法で分析した結果、電子比で平均6
4%のフッ素が表面に化学結合していることがわかっ
た。
The treated surface was measured for contact angle with pure water. As a result, 100 to 10 in the area hit by the plasma.
It was 8 degrees, and it became clear that it was water repellent.
The contact angle of the substrate used was 65 degrees. In addition, as a result of analyzing the processing section by X-ray electron spectroscopy, the average electron ratio was 6
It was found that 4% of fluorine was chemically bonded to the surface.

【0044】尚、接触角の測定は、協和界面科学社製の
接触角測定装置(商品名「CA−D」)で水を滴下し、
静的接触角を測定した。又、比誘電率は、Polyme
r Laboratories Ltd.社製の誘電率
熱分析装置(商品名「PL−DETA」)を用い、直径
33mmの誘電体を準備し、20〜100kHzの周波
数帯で室温25℃で参考の比誘電率を測定した。尚、粉
体については、粉体メーカーのカタログ値を代用した。
The contact angle was measured by dropping water with a contact angle measuring device (trade name "CA-D") manufactured by Kyowa Interface Science Co., Ltd.
The static contact angle was measured. The relative permittivity is Polyme
r Laboratories Ltd. Using a dielectric constant thermal analyzer (trade name "PL-DETA") manufactured by a company, a dielectric having a diameter of 33 mm was prepared, and a reference relative dielectric constant was measured at room temperature of 25 ° C in a frequency band of 20 to 100 kHz. For powder, the catalog value of the powder manufacturer was used instead.

【0045】実施例2 チタン酸バリウムの代わりに、直径120mm×厚み2
mmのルチル結晶構造の酸化チタン焼結体(比誘電率約
70)を配設し、4.2kV、37.5mAの電力を印
加したこと以外は実施例1と同様に処理を行った。処理
面の純水に対する接触角測定を行った。
Example 2 Instead of barium titanate, diameter 120 mm × thickness 2
The same treatment as in Example 1 was performed, except that a titanium oxide sintered body having a rutile crystal structure of mm (relative permittivity of about 70) was provided and a power of 4.2 kV and 37.5 mA was applied. The contact angle of the treated surface with pure water was measured.

【0046】その結果、プラズマが当たった領域で10
0〜108度を示し撥水化されていることが明らかとな
った。処理部を、X線電子分光で処理した結果、原子比
で平均62%のフッ素が表面に化学結合していることが
わかった。
As a result, in the area hit by the plasma, 10
It was 0 to 108 degrees, and it became clear that it was made water repellent. As a result of treating the treated portion by X-ray electron spectroscopy, it was found that 62% of fluorine in average atomic ratio was chemically bonded to the surface.

【0047】実施例3 プラズマ溶射により気孔率5%のルチル結晶構造の酸化
チタン皮膜(比誘電率約25)を直径130mm×厚み
2mmのアルミニウム板片面全面及び側面に500μm
に厚さに形成し、下部電極上に設置し、電圧5.4k
V、電流35.7mAの電力を印加した以外は実施例1
と同様である。
Example 3 A titanium oxide film having a rutile crystal structure with a porosity of 5% (relative permittivity of about 25) was formed by plasma spraying on an aluminum plate having a diameter of 130 mm and a thickness of 2 mm of 500 μm on one side and all sides.
Formed to a thickness and installed on the lower electrode, voltage 5.4k
Example 1 except that power of V and current of 35.7 mA was applied.
Is the same as.

【0048】その結果、プラズマが当たった領域で10
0〜108度を示し撥水化されていることが明らかとな
った。処理部を、X線電子分光法で分析した結果、原子
比で平均62%のフッ素が表面に化学結合していること
がわかった。
As a result, in the area hit by the plasma, 10
It was 0 to 108 degrees, and it became clear that it was made water repellent. As a result of analyzing the treated part by X-ray electron spectroscopy, it was found that 62% of fluorine in average atomic ratio was chemically bonded to the surface.

【0049】実施例4 実施例1で基材としてポリエチレンテレフタレートフィ
ルムの代わりに、ポリエチレンフィルム(積水化学社製
ポリ袋NP−70を切断して使用)を用いたこと以外は
実施例1と同様である。
Example 4 The same as Example 1 except that a polyethylene film (polybag NP-70 manufactured by Sekisui Chemical Co., Ltd. was cut and used) was used as the substrate in Example 1 instead of the polyethylene terephthalate film. is there.

【0050】処理面の純水に対する接触角測定を行っ
た。その結果、プラズマが当たった領域で118〜12
8度を示し撥水化されていることが明らかとなった。
又、処理部を、X線電子分光法で分析した結果、原子比
で平均67%のフッ素が表面に化学結合していることが
わかった。
The contact angle of the treated surface with pure water was measured. As a result, 118 to 12 in the area hit by the plasma
It was 8 degrees, and it became clear that it was water repellent.
Further, as a result of analyzing the treated part by X-ray electron spectroscopy, it was found that 67% of fluorine in terms of atomic ratio was chemically bonded to the surface.

【0051】実施例5 基材として直径50mm×厚み3mmのポリメチルメタ
クリレートシート(三菱レーヨン社製、商品名「アクリ
ライトEX」)を用い、4.9kV、36mAの電力を
印加したこと以外は実施例1と同様である。
Example 5 A polymethylmethacrylate sheet having a diameter of 50 mm and a thickness of 3 mm (trade name "Acrylite EX" manufactured by Mitsubishi Rayon Co., Ltd.) was used as a base material, except that a power of 4.9 kV and 36 mA was applied. Similar to Example 1.

【0052】処理面の純水に対する接触角測定を行っ
た。その結果、プラズマが当たった領域で100〜10
8度を示し撥水化されていることが明らかとなった。
又、処理部を、X線電子分光法で分析した結果、原子比
で平均61%のフッ素が表面に化学結合していることが
わかった。
The contact angle of the treated surface with pure water was measured. As a result, 100 to 10 in the area hit by the plasma.
It was 8 degrees, and it became clear that it was water repellent.
Further, as a result of analyzing the treated portion by X-ray electron spectroscopy, it was found that 61% of fluorine in terms of atomic ratio was chemically bonded to the surface.

【0053】実施例6 図1に示した装置(金属電極直径約80mm)を用い、
チタン酸バリウム粉末(富士チタニウム社製、商品名
「BT−203」、比誘電率約17,000)が充填さ
れた直径90mm×厚み15mmのポリスチレン製の市
販シャーレが配設された下部電極上に設置し直径80m
m×厚み100μmのポリエステルフィルム(東レ社
製、商品名「ルミラーS10」)を設置し、金属電極間
距離約15mmに設定後、1Torrまで油回転ポンプ
で排気した。
Example 6 Using the apparatus shown in FIG. 1 (metal electrode diameter: about 80 mm),
On a lower electrode provided with a polystyrene petri dish having a diameter of 90 mm and a thickness of 15 mm filled with barium titanate powder (manufactured by Fuji Titanium Co., Ltd., trade name “BT-203”, relative permittivity of about 17,000). 80m diameter installed
A polyester film (trade name: “Lumirror S10”, manufactured by Toray Industries, Inc.) having a size of m × 100 μm was installed, and the distance between the metal electrodes was set to about 15 mm, and then exhausted to 1 Torr with an oil rotary pump.

【0054】次いで、ガス流量2sccmの4フッ化炭
素ガスを反応ガス導入管8を経て多孔構造の金属電極4
より、又、ガス流量198sccmのヘリウムガスを不
活性ガス導入管9より容器2内に導入し、760Tor
rの大気圧とした後、周波数15kHzで、3.2k
V、40mAの電力を印加し、10秒間放置した。電圧
印加に伴って、プラズマ発光が観察された。
Then, a carbon tetrafluoride gas having a gas flow rate of 2 sccm is passed through the reaction gas introducing pipe 8 and the metal electrode 4 having a porous structure.
Further, helium gas with a gas flow rate of 198 sccm was introduced into the container 2 through the inert gas introduction pipe 9, and 760 Tor
After setting the atmospheric pressure to r, 3.2k at a frequency of 15kHz
A power of V and 40 mA was applied and left for 10 seconds. Plasma emission was observed as the voltage was applied.

【0055】処理面の純水に対する接触角測定を行っ
た。その結果、プラズマが当たった領域で100〜10
8度を示し撥水化されていることが明らかとなった。
尚、使用した基材の接触角は65度であった。又、処理
部を、X線電子分光法で分析した結果、原子比で64%
のフッ素が表面に化学結合していることがわかった。
The contact angle of the treated surface with pure water was measured. As a result, 100 to 10 in the area hit by the plasma.
It was 8 degrees, and it became clear that it was water repellent.
The contact angle of the substrate used was 65 degrees. In addition, as a result of analyzing the processing part by X-ray electron spectroscopy, the atomic ratio is 64%.
It was found that the above fluorine was chemically bonded to the surface.

【0056】実施例7 チタン酸バリウムの代わりに、ルチル構造の酸化チタン
(富士チタニウム工業社製、商品名「TP−3」、比誘
電率で約80)を充填し、5.2kV、36.5mAの
電力を印加したこと以外は実施例6と同様に処理を行っ
た。
Example 7 Instead of barium titanate, titanium oxide having a rutile structure (manufactured by Fuji Titanium Industry Co., Ltd., trade name "TP-3", having a relative dielectric constant of about 80) was filled, and 5.2 kV, 36. The same treatment as in Example 6 was performed except that a power of 5 mA was applied.

【0057】処理面の純水に対する接触角測定を行っ
た。その結果、プラズマが当たった領域で100〜10
8度を示し撥水化されていることが明らかとなった。処
理部を、X線電子分光法で分析した結果、原子比で62
%のフッ素が表面に化学結合していることがわかった。
The contact angle of the treated surface with pure water was measured. As a result, 100 to 10 in the area hit by the plasma.
It was 8 degrees, and it became clear that it was water repellent. As a result of analyzing the processing part by X-ray electron spectroscopy, the atomic ratio was 62.
It was found that% fluorine was chemically bonded to the surface.

【0058】実施例8 上面─底面を直径120mm×厚み100μmのポリエ
チレンテレフタレートフィルム(東レ社製、商品名「ル
ミラーS10」)とし、側面を厚み1mm×内径60m
m×外径80mmのポリテトラフルオロエチレンとした
容器中に、チタン酸バリウム粉末(富士チタニウム工業
社製、商品名「HBT−1」、比誘電率約2,000)
を充填し、3.9kV、38.0mAの電力を印加した
こと以外は実施例6と同様である。
Example 8 A polyethylene terephthalate film having a diameter of 120 mm and a thickness of 100 μm (trade name “Lumirror S10” manufactured by Toray Industries, Inc.) was used on the top and bottom surfaces, and the side was 1 mm in thickness and 60 m in inner diameter.
In a container made of polytetrafluoroethylene having an outer diameter of 80 mm and a diameter of 80 mm, barium titanate powder (manufactured by Fuji Titanium Industry Co., Ltd., trade name "HBT-1", relative dielectric constant of about 2,000).
And charging power of 3.9 kV and 38.0 mA was applied.

【0059】処理面の純水に対する接触角測定を行っ
た。その結果、プラズマが当たった領域で100〜10
8度を示し撥水化されていることが明らかとなった。
又、処理部を、X線電子分光法で分析した結果、原子比
で61%のフッ素が表面に化学結合していることがわか
った。
The contact angle of the treated surface with pure water was measured. As a result, 100 to 10 in the area hit by the plasma.
It was 8 degrees, and it became clear that it was water repellent.
Further, as a result of analyzing the treated portion by X-ray electron spectroscopy, it was found that 61% of atomic ratio of fluorine was chemically bonded to the surface.

【0060】実施例9 ガス流量1sccmの4フッ化炭素ガスとガス流量2s
ccmの酸素ガスとの混合ガスを反応ガス導入管8を経
て多孔構造の上部金属電極4より、又、ガス流量197
sccmのヘリウムガスを不活性ガス導入管9より容器
2内に導入し、760Torrの大気圧とした後、3.
2kV、38.5mAの電力を印加し、1分間放置した
こと以外は実施例6と同様である。
Example 9 Carbon tetrafluoride gas having a gas flow rate of 1 sccm and a gas flow rate of 2 s
A mixed gas of oxygen gas of ccm is passed through the reaction gas introduction pipe 8 from the upper metal electrode 4 having a porous structure, and the gas flow rate is 197.
2. After introducing sccm of helium gas into the container 2 through the inert gas introducing pipe 9 and setting the atmospheric pressure to 760 Torr, 3.
Example 6 is the same as Example 6 except that a power of 2 kV and 38.5 mA is applied and left for 1 minute.

【0061】処理面に純水に対する接触角測定を行っ
た。その結果、プラズマが当たった領域で25〜35度
を示し親水化されている事が明らかとなった。
The contact angle of pure water on the treated surface was measured. As a result, it was revealed that the region exposed to the plasma exhibited a temperature of 25 to 35 degrees and was hydrophilized.

【0062】実施例10 ガス流量1sccmの4フッ化炭素ガスとガス流量2s
ccmの酸素ガスとの混合ガスを反応ガス導入管8を経
て多孔構造の金属電極4から、又、ガス流量197sc
cmのヘリウムガスを不活性ガス導入管9から容器2内
に導入し、760Torrの大気圧とした後、3.5k
V、39mAの電力を印加し、1分間放置したこと以外
は実施例6と同様である。
Example 10 Carbon tetrafluoride gas having a gas flow rate of 1 sccm and a gas flow rate of 2 s
A mixed gas of oxygen gas of ccm is passed through the reaction gas introducing pipe 8 from the metal electrode 4 having a porous structure, and the gas flow rate is 197 sc.
After introducing helium gas (cm) into the container 2 through the inert gas introducing pipe 9 and setting the atmospheric pressure to 760 Torr, 3.5 k
Example 6 is the same as Example 6 except that an electric power of 39 mA is applied and V is left for 1 minute.

【0063】処理面の純水に対する接触角測定を行っ
た。その結果、プラズマが当たった領域で28〜35度
を示し、親水化されいることが明らかとなった。
The contact angle of the treated surface with pure water was measured. As a result, it was revealed that the region exposed to the plasma had a temperature of 28 to 35 degrees and was hydrophilic.

【0064】比較例 固体誘電対として直径120mm×厚み2mmの石英ガ
ラス(比誘電率約4.5)を用いたこと以外は実施例1
と同様にした。2.1kVの電圧を印加したが放電は確
認されなかった。尚、7.0kVの電圧印加によっては
じめてプラズマ発光が確認された。プラズマが当たった
領域で100度以上の接触角を示すには、1分以上の処
理時間を要した。
Comparative Example Example 1 except that quartz glass having a diameter of 120 mm and a thickness of 2 mm (relative permittivity of about 4.5) was used as the solid dielectric pair.
Same as. A voltage of 2.1 kV was applied, but no discharge was confirmed. It should be noted that plasma emission was first confirmed by applying a voltage of 7.0 kV. It took a processing time of 1 minute or more to show a contact angle of 100 degrees or more in the region hit by the plasma.

【0065】[0065]

【発明の効果】本発明の積層体の製造方法は、上記の如
き構成とされていることにより、低い印加電圧且つ短時
間にて各種基材の表面処理を行い、表面特性の優れた積
層体を容易に且つ安価に製造することができる。
EFFECTS OF THE INVENTION The method for producing a laminated body of the present invention, having the above-mentioned constitution, performs the surface treatment of various base materials at a low applied voltage for a short time, and has excellent surface characteristics. Can be manufactured easily and at low cost.

【0066】[0066]

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に使用する大気圧プラズマ表面処理装置
の一例を示す一部断面図である。
FIG. 1 is a partial cross-sectional view showing an example of an atmospheric pressure plasma surface treatment apparatus used in the present invention.

【符号の簡単な説明】[Simple explanation of symbols]

1 低周波電源部 2 処理容器 3 表面処理部 4 上部金属電極 5 下部金属電極 6 固体誘電体 7 プラスチック基材 8 反応ガス導入管 9 不活性ガス導入管 10 排気口 1 Low Frequency Power Supply Unit 2 Treatment Container 3 Surface Treatment Unit 4 Upper Metal Electrode 5 Lower Metal Electrode 6 Solid Dielectric 7 Plastic Base Material 8 Reactive Gas Introducing Pipe 9 Inert Gas Introducing Pipe 10 Exhaust Port

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 一対の相対する金属電極の少なくとも一
方の対向面に比導電率が10以上で且つチタン酸系化合
物を含む固体導電体が完全に電極表面を覆うように配設
された金属電極間に処理すべき基材を設置し、不活性ガ
ス及び反応ガスを金属電極間の空間に導入し、大気圧近
傍の圧力下で金属電極に電圧を印加して放電プラズマを
起こさせ、そのプラズマによって励起される活性種を基
材表面に接触させてその表面処理を行うことを特徴とす
る積層体の製造方法。
1. A metal electrode in which a solid conductor having a specific conductivity of 10 or more and containing a titanic acid-based compound is disposed on at least one opposing surface of a pair of opposing metal electrodes so as to completely cover the electrode surfaces. A base material to be treated is placed between them, an inert gas and a reaction gas are introduced into the space between the metal electrodes, and a voltage is applied to the metal electrodes under a pressure near atmospheric pressure to generate discharge plasma. A method for producing a laminate, which comprises subjecting the surface of a base material to contact with active species excited by the surface treatment.
JP571594A 1994-01-24 1994-01-24 Method for manufacturing laminated body Pending JPH07207449A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP571594A JPH07207449A (en) 1994-01-24 1994-01-24 Method for manufacturing laminated body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP571594A JPH07207449A (en) 1994-01-24 1994-01-24 Method for manufacturing laminated body

Publications (1)

Publication Number Publication Date
JPH07207449A true JPH07207449A (en) 1995-08-08

Family

ID=11618821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP571594A Pending JPH07207449A (en) 1994-01-24 1994-01-24 Method for manufacturing laminated body

Country Status (1)

Country Link
JP (1) JPH07207449A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09208726A (en) * 1996-02-02 1997-08-12 Sekisui Chem Co Ltd Surface treatment method of substrate using plasma
US6465057B1 (en) 1995-09-13 2002-10-15 Nissin Electric Co., Ltd. Plasma CVD method and apparatus
JP2010287404A (en) * 2009-06-10 2010-12-24 Tocalo Co Ltd Discharge electrode and method of manufacturing the discharge electrode
US8007649B2 (en) 2004-02-06 2011-08-30 Shinko Electric Industries Co., Ltd. Hydrophilic treatment method and wiring pattern forming method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465057B1 (en) 1995-09-13 2002-10-15 Nissin Electric Co., Ltd. Plasma CVD method and apparatus
JPH09208726A (en) * 1996-02-02 1997-08-12 Sekisui Chem Co Ltd Surface treatment method of substrate using plasma
US8007649B2 (en) 2004-02-06 2011-08-30 Shinko Electric Industries Co., Ltd. Hydrophilic treatment method and wiring pattern forming method
JP2010287404A (en) * 2009-06-10 2010-12-24 Tocalo Co Ltd Discharge electrode and method of manufacturing the discharge electrode

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