JPH07211162A - Manufacture of transparent conductive film - Google Patents
Manufacture of transparent conductive filmInfo
- Publication number
- JPH07211162A JPH07211162A JP1984494A JP1984494A JPH07211162A JP H07211162 A JPH07211162 A JP H07211162A JP 1984494 A JP1984494 A JP 1984494A JP 1984494 A JP1984494 A JP 1984494A JP H07211162 A JPH07211162 A JP H07211162A
- Authority
- JP
- Japan
- Prior art keywords
- light
- transparent conductive
- peak
- sputtering
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000001228 spectrum Methods 0.000 claims abstract description 11
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000004033 plastic Substances 0.000 abstract description 5
- 229920003023 plastic Polymers 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 41
- 239000010410 layer Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 244000144985 peep Species 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はスパッタ法により透明導
電膜を製造する方法に関する。FIELD OF THE INVENTION The present invention relates to a method for producing a transparent conductive film by a sputtering method.
【０００２】[0002]
【従来の技術およびその課題】透明導電膜の品質は膜の
比抵抗値によって決まり、特にＴＦＴ（薄膜トランジス
タ方式）等の液晶ディスプレイにおいてはより低抵抗な
ものが望まれている。そこで、透明導電膜の低抵抗化の
種々の試みがなされている。2. Description of the Related Art The quality of a transparent conductive film is determined by the specific resistance value of the film, and a liquid crystal display such as a TFT (thin film transistor system) is desired to have a lower resistance. Therefore, various attempts have been made to reduce the resistance of the transparent conductive film.
【０００３】現在、透明導電膜の作製法は量産の点から
スパッタ法が主流となっている。透明基板としてはガラ
ス基板が汎用されている。最も使用されている膜の低抵
抗化の手段は、基板の耐熱性を利用して、成膜中あるい
は成膜後に結晶化温度以上（ＩＴＯ膜の場合１５０〜２
００℃）に加熱するという手法である。ところが、この
方法は、耐熱性の低いプラスチック基板等には使用でき
ない。At present, the sputtering method is predominantly used as the method for producing the transparent conductive film from the viewpoint of mass production. A glass substrate is commonly used as a transparent substrate. The most used means for lowering the resistance of a film is to utilize the heat resistance of the substrate, and the crystallization temperature or higher during film formation or after film formation (150 to 2 for an ITO film).
This is a method of heating to (00 ° C.). However, this method cannot be used for a plastic substrate having low heat resistance.
【０００４】また、このようなプラスチック基板に対し
て、透明導電層を高速で成膜しようとすると、スパッタ
放電中に発生するイオンのボンバードにより基板の表
面、さらには全体が損傷を受け、しいては基板上に形成
される透明導電層が劣化して膜の抵抗が大きくなるとい
う問題が生じる。When a transparent conductive layer is formed on such a plastic substrate at a high speed, the surface of the substrate and the entire substrate are damaged due to bombardment of ions generated during sputter discharge. Causes a problem that the transparent conductive layer formed on the substrate deteriorates and the resistance of the film increases.
【０００５】このような観点から、スパッタ中の放電イ
ンピーダンスを下げ、低電圧スパッタ化することによ
り、スパッタ放電中に発生したイオンによる膜損傷を低
減させて低抵抗な膜を得る試みが行われた。ターゲット
上に熱電子発生用フィラメント‐対電極を設けた４極ス
パッタ（特開昭61-292817 号公報）、あるいはカソード
部の磁場を強めることによりターゲット上の漏洩磁束密
度を高めた強磁場スパッタ（特開平2-232358号公報）が
その例として挙げられる。しかし、前者はカソード回り
が複雑になり、操作性が悪くなるという問題がある。ま
た、後者は有効な方法といえるが、低電圧化にはかなり
の高磁場磁石が必要となり、取扱いが容易でないなどの
問題がある。さらに、これらの方法ではなお、十分に低
抵抗な膜を高速成膜によって得るのは困難である。From this point of view, an attempt has been made to obtain a low-resistance film by reducing the discharge impedance during sputtering and reducing the sputtering voltage to reduce the film damage due to the ions generated during the sputtering discharge. . Quadrupole sputtering with a filament-counter electrode for generating thermoelectrons on the target (JP-A-61-292817), or strong magnetic field sputtering in which the magnetic flux at the cathode is increased to increase the leakage flux density on the target ( Japanese Patent Laid-Open No. 2-232358) is an example thereof. However, the former has a problem that the cathode is complicated and the operability is deteriorated. Also, the latter can be said to be an effective method, but there is a problem that a considerably high magnetic field magnet is required for lowering the voltage and it is not easy to handle. Furthermore, even with these methods, it is still difficult to obtain a sufficiently low-resistance film by high-speed film formation.
【０００６】そこで本発明は、比較的簡易な方法を用い
て低抵抗な透明導電膜を高速に作製する方法を提供する
ことを目的とする。Therefore, an object of the present invention is to provide a method for producing a transparent conductive film having a low resistance at a high speed by using a relatively simple method.
【０００７】[0007]
【課題を解決するための手段】本発明者は、スパッタ法
における透明導電膜の作成方法について鋭意検討を重ね
た結果、特定の光を照射して、成膜中の膜損傷の原因と
なるイオンの発生を抑制すれば（すなわち膜損傷に関与
するイオンの量を抑制すれば）低抵抗な膜が得られるこ
とを見出し、本発明に到達した。As a result of extensive studies on the method of forming a transparent conductive film in the sputtering method, the present inventor has radiated a specific light to generate ions that cause film damage during film formation. The inventors have found that a film having a low resistance can be obtained by suppressing the generation of (i.e., suppressing the amount of ions involved in the film damage), and have reached the present invention.
【０００８】すなわち本発明は、透明基板上に透明導電
層を少なくとも有する透明導電膜の製造方法において、
該透明導電層をスパッタ法により設け、かつ該スパッタ
法を行う際に、スパッタ放電プラズマに対して、５００
ｎｍ以下にのみ光強度スペクトルのピークを有する光を
照射することを特徴とする方法を提供するものである。That is, the present invention provides a method for producing a transparent conductive film having at least a transparent conductive layer on a transparent substrate,
The transparent conductive layer is provided by a sputtering method, and when the sputtering method is performed, the sputtering amount is 500
It is intended to provide a method characterized by irradiating with light having a peak of a light intensity spectrum only in nm or less.
【０００９】本発明において使用する基板としては、ガ
ラス、プラスチック等の透明基板が使用できる。プラス
チックとしては、例えばポリエチレンテレフタレート、
ポリブチレンテレフタレート等のポリエステル、ポリア
ミド、ポリ塩化ビニル、ポリカーボネート、ポリスチレ
ン、ポリプロピレン、ポリエチレン、ポリアリーレート
等（単独重合体の他に共重合体も含む）が挙げられる。
また、基板はこれらを２種以上含む積層体であっても良
い。基板の厚さは、用途によって異なるが、通常２５μ
ｍ〜３．０ｍｍである。The substrate used in the present invention may be a transparent substrate such as glass or plastic. Examples of the plastic include polyethylene terephthalate,
Examples thereof include polyesters such as polybutylene terephthalate, polyamides, polyvinyl chloride, polycarbonates, polystyrenes, polypropylenes, polyethylenes and polyarylates (including copolymers in addition to homopolymers).
Further, the substrate may be a laminated body containing two or more of these. The thickness of the substrate depends on the application, but is usually 25μ
It is m-3.0 mm.
【００１０】透明導電層としては、慣用の透明導電層の
材料、例えば金属酸化物を用いることができる。具体的
には例えばＳｎＯ2 、ＣｄＯ、ＺｎＯ、ＣＴＯ系（Ｃｄ
ＳｎＯ3 、Ｃｄ2 ＳｎＯ4 、ＣｄＳｎＯ4 ）、Ｉｎ2 Ｏ
3 、ＣｄＩｎ2 Ｏ4 等が挙げられる。好ましくは上記の
金属酸化物に、Ｓｎ、Ｓｂ、ＦおよびＡｌから選ばれる
１種または２種以上を添加した複合（ドープ）相であ
る。その中でも好ましいものは、Ｓｎを添加したＩｎ2
Ｏ3 （ＩＴＯ）、Ｓｂを添加したＳｎＯ2 、Ｆを添加し
たＳｎＯ2 、Ａｌを添加したＺｎＯ等である。透明導電
層はこれらの層を単層または多層で使用することができ
る。層厚は、材質によって異なるが、例えばＩＴＯ層で
は３００〜３５００オングストロームが好ましく、より
好ましくは３６０〜３１００オングストロームである。
また透明導電層のシート抵抗は４００Ω／□以下であれ
ば特に制限はない。For the transparent conductive layer, a conventional transparent conductive layer material such as a metal oxide can be used. Specifically, for example, SnO 2 , CdO, ZnO, CTO-based (Cd
SnO 3 , Cd 2 SnO 4 , CdSnO 4 ), In 2 O
3 , CdIn 2 O 4 and the like. It is preferably a composite (doped) phase in which one or more selected from Sn, Sb, F and Al are added to the above metal oxide. Among them, preferable one is In 2 with Sn added.
Examples thereof include O 3 (ITO), Sb-added SnO 2 , F-added SnO 2 , and Al-added ZnO. As the transparent conductive layer, these layers can be used as a single layer or multiple layers. Although the layer thickness varies depending on the material, for example, the thickness of the ITO layer is preferably 300 to 3500 angstroms, and more preferably 360 to 3100 angstroms.
The sheet resistance of the transparent conductive layer is not particularly limited as long as it is 400Ω / □ or less.
【００１１】なお、任意的に基板と透明導電層との間
に、保護層として例えばＳｉＯ2 層を設けることも可能
である。It is also possible to optionally provide, for example, a SiO 2 layer as a protective layer between the substrate and the transparent conductive layer.
【００１２】本発明の方法は、上記の透明導電層をスパ
ッタ成膜する際に、スパッタ放電プラズマに対して、５
００ｎｍ以下、好ましくは４００ｎｍ以下にのみ光強度
スペクトルのピークを有する光を照射することを特徴と
する。スパッタ成膜には直流スパッタ法、高周波スパッ
タ法、反応性高周波スパッタ法など任意のスパッタ法を
用いることができ、また、スパッタ条件は慣用の透明導
電層の成膜条件を使用することができる。According to the method of the present invention, when the above transparent conductive layer is formed by sputtering, 5 times the sputtering discharge plasma is applied.
It is characterized in that light having a peak of the light intensity spectrum is emitted only to 00 nm or less, preferably 400 nm or less. For sputtering film formation, an arbitrary sputtering method such as a DC sputtering method, a high frequency sputtering method, a reactive high frequency sputtering method can be used, and as the sputtering condition, a conventional transparent conductive layer forming condition can be used.
【００１３】前記範囲より上に光強度スペクトルのピー
クを有する光を照射すると本発明の効果が得られない。
前記範囲内であればピークがいくつあってもよい。光照
射手段は特に限定されず、例えば光源から直接光を照射
してもよいし、また光源からの光をフィルター、レンズ
などを通して照射してもよい。光源は特に限定されず、
より低波長、高出力のものほど有効である。例えば高、
中および低圧Ｈｇランプ、アークショートランプ、エキ
シマレーザー等が使用できる。また、汎用されているハ
ロゲンランプ（可視光全域にピークを有する）を使用す
る場合には、高波長成分カットフィルターなどを用いて
上記範囲の光のみを選択的に取り出して使用する。光照
射は、当然のことながら利用効率の高い方法が好まし
い。光源はスパッタ装置内または装置外のいずれにも設
置することができる。装置外に設置した場合には通常、
光を間接的に（例えば石英窓などを通して）チャンバー
内に導入することができる。また、装置内に設置した場
合には、光を直接または間接的に（例えばフィルターや
レンズなどを通して）プラズマに対して照射する。この
場合、光源を真空チャンバー内に設置するのであるか
ら、例えばランプホルダーの水冷等の手段によって光源
を十分冷却し、発熱による破損を防止する必要がある。If the light having a peak of the light intensity spectrum above the above range is irradiated, the effect of the present invention cannot be obtained.
There may be any number of peaks within the above range. The light irradiation means is not particularly limited, and for example, light may be directly emitted from the light source, or light from the light source may be emitted through a filter, a lens or the like. The light source is not particularly limited,
The lower the wavelength and the higher the output, the more effective. High for example,
Medium and low pressure Hg lamps, arc short lamps, excimer lasers, etc. can be used. When a general-purpose halogen lamp (having a peak in the entire visible light range) is used, only the light in the above range is selectively taken out and used by using a high wavelength component cut filter or the like. As a matter of course, the light irradiation is preferably a method having high utilization efficiency. The light source can be installed either inside or outside the sputtering apparatus. When installed outside the device,
Light can be introduced indirectly into the chamber (eg, through a quartz window or the like). When installed in the apparatus, light is directly or indirectly (eg, through a filter or lens) applied to the plasma. In this case, since the light source is installed in the vacuum chamber, it is necessary to sufficiently cool the light source by means such as water cooling of the lamp holder to prevent damage due to heat generation.
【００１４】本発明の方法によって製造される透明導電
膜は、太陽電池、光センサ等の光電変換用途；液晶、エ
レクトロルミネセンス、エレクトロクロミック、ＥＬ等
の表示素子用途；建築物、自動車、航空機、炉ののぞき
窓等の各種窓の熱線反射用途、可視光の可変遮光用途、
防曇防氷用途；帯電防止用途；タッチスイッチ用途；光
通信用途等の広い分野で使用することができる。The transparent conductive film produced by the method of the present invention is used for photoelectric conversion such as solar cells and photosensors; for display devices such as liquid crystal, electroluminescence, electrochromic and EL; for buildings, automobiles, aircraft, Heat ray reflection applications for various windows such as furnace peep windows, variable light blocking applications for visible light,
It can be used in a wide range of fields such as anti-fogging and anti-icing applications; antistatic applications; touch switch applications; optical communication applications.
【００１５】[0015]
【作用】本発明の方法においては、高電力を投入して高
速成膜しても、その際に発生するイオンが、低波長すな
わち高エネルギーを持った光の照射により散乱され、そ
の結果、基板の損傷が抑制されて、低抵抗な膜が高速で
作製可能となるものと推測される。In the method of the present invention, even when high power is applied to form a film at high speed, the ions generated at that time are scattered by irradiation with light having a low wavelength, that is, high energy, and as a result, the substrate It is presumed that the damage of the film is suppressed and the low resistance film can be produced at high speed.
【００１６】[0016]
【実施例】以下の実施例により、本発明をさらに詳しく
説明する。実施例１〜３ 厚さ１００μｍのポリエチレンテレフタレート（ＰＥ
Ｔ）フィルム基板上に、基板搬送通過型（インライン方
式）の直流プレーナー型マグネトロンスパッタ装置（Ｕ
ＬＶＡＣ社製）を使用して、スパッタ成膜を行った。タ
ーゲットとしてＩｎ2 Ｏ3 とＳｎＯ2 の粉末焼結体（重
量比９０：１０）（寸法200 ×400 ×6t mm ）（日鉱共
石社製）を用いた。このとき、Ｈｇアークショートラン
プ（５００ｎｍ以下にのみ光強度スペクトルのピークを
有する光を発生する）をスパッタ装置外に設置し、石英
窓を通して光をチャンバー内に導入し、スパッタ放電中
プラズマに照射した。なお、光強度は光源を収納したラ
ンプケースの光照射窓に光強度測定器をあて、そこから
照射される光強度でモニターした。また、他のスパッタ
条件は以下の通りであった：初期真空度 3×10-6torr
以下、ガス種（ガス流量） Ａｒ＋Ｏ2 （160 SCCM：3.
5 SCCM）、ガス圧 4.0×10-3 torr およびターゲット
上漏洩磁束密度 １１００ガウス。なお、基板は特に加
熱せず、スパッタ放電による温度上昇のみとした。かく
して膜厚１５００オングストロームのＩＴＯ膜を成膜し
た。The present invention will be described in more detail by the following examples. Examples 1 to 3 100 μm thick polyethylene terephthalate (PE
T) Direct current planar type magnetron sputtering device (U) of substrate transfer through type (in-line type) on film substrate
The film was formed by sputtering by using LVAC). As a target, a powder sintered body of In 2 O 3 and SnO 2 (weight ratio 90:10) (dimensions 200 × 400 × 6 t mm) (manufactured by Nikko Kyoseki Co., Ltd.) was used. At this time, an Hg arc short lamp (which generates light having a peak of the light intensity spectrum only at 500 nm or less) was installed outside the sputtering apparatus, and the light was introduced into the chamber through the quartz window to irradiate the plasma during the sputtering discharge. . The light intensity was monitored by applying a light intensity measuring device to a light irradiation window of a lamp case accommodating the light source and measuring the light intensity emitted from the device. The other sputtering conditions were as follows: Initial vacuum degree 3 × 10 -6 torr
Below, gas type (gas flow rate) Ar + O 2 (160 SCCM: 3.
5 SCCM), gas pressure 4.0 × 10 -3 torr and magnetic flux density on target 1100 gauss. It should be noted that the substrate was not particularly heated, and only the temperature was increased by the sputter discharge. Thus, an ITO film having a film thickness of 1500 angstrom was formed.
【００１７】かくして得られた透明導電膜の抵抗率を四
端子法により測定した。結果を表１に示す。実施例４〜６ Ｈｇアークショートランプをスパッタ装置外に設置する
代わりに、同じランプを装置内（ターゲット横、装置底
板上）に設置し直接光をプラズマに照射した以外は実施
例１〜３と同様にして、スパッタ法により、基板に膜厚
１５００オングストロームのＩＴＯ膜を成膜した。The resistivity of the transparent conductive film thus obtained was measured by the four-terminal method. The results are shown in Table 1. Examples 4 to 6 Examples 1 to 3 except that the Hg arc short lamp was installed outside the sputtering apparatus, the same lamp was installed inside the apparatus (on the side of the target, on the bottom plate of the apparatus) and the plasma was directly irradiated with the light. Similarly, an ITO film having a film thickness of 1500 angstrom was formed on the substrate by the sputtering method.
【００１８】かくして得られた透明導電膜の抵抗率を実
施例１〜３と同一条件にて測定した。結果を表１に示
す。比較例１〜２ Ｈｇアークショートランプの代わりに、可視光全域にピ
ークを有するＸｅアークショートランプ（高波長成分の
カットは行わない）を用いた以外は実施例１〜２と同様
にして、スパッタ法により、基板に膜厚１５００オング
ストロームのＩＴＯ膜を成膜した。The resistivity of the transparent conductive film thus obtained was measured under the same conditions as in Examples 1-3. The results are shown in Table 1. Comparative Examples 1 to 2 Sputtering was performed in the same manner as in Examples 1 to 2 except that an Xe arc short lamp having a peak in the entire visible light range (no high wavelength component was cut) was used in place of the Hg arc short lamp. By the method, an ITO film having a film thickness of 1500 angstrom was formed on the substrate.
【００１９】かくして得られた透明導電膜の抵抗率を実
施例１〜３と同一条件にて測定した。結果を表１に示
す。比較例３〜４ 光照射を行わなかった以外は比較例１〜２と同様にして
スパッタ法により、基板に膜厚１５００オングストロー
ムのＩＴＯ膜を成膜した。The resistivity of the transparent conductive film thus obtained was measured under the same conditions as in Examples 1-3. The results are shown in Table 1. Comparative Examples 3 to 4 An ITO film having a film thickness of 1500 angstrom was formed on the substrate by the sputtering method in the same manner as in Comparative Examples 1 and 2 except that the light irradiation was not performed.
【００２０】かくして得られた透明導電膜の抵抗率を実
施例１〜３と同一条件にて測定した。結果を表１に示
す。The resistivity of the transparent conductive film thus obtained was measured under the same conditions as in Examples 1-3. The results are shown in Table 1.
【００２１】[0021]
【表１】 Ａ：光源をチャンバー外に設置し、石英窓を通して光を
導入 Ｂ：光源をチャンバー内に設置し、光を直接照射[Table 1] A: The light source is installed outside the chamber and the light is introduced through the quartz window. B: The light source is installed inside the chamber and the light is directly irradiated.
【００２２】[0022]
【発明の効果】本発明によれば、簡易な方法を用いて低
抵抗な透明導電膜を高速に作製する方法を提供すること
ができる。According to the present invention, it is possible to provide a method for producing a transparent conductive film having a low resistance at high speed by using a simple method.
Claims (4)
する透明導電膜の製造方法において、該透明導電層をス
パッタ法により設け、かつ該スパッタ法を行う際に、ス
パッタ放電プラズマに対して、５００ｎｍ以下にのみ光
強度スペクトルのピークを有する光を照射することを特
徴とする方法。1. A method for producing a transparent conductive film having at least a transparent conductive layer on a transparent substrate, wherein the transparent conductive layer is provided by a sputtering method, and when the sputtering method is performed, 500 nm with respect to a sputtering discharge plasma. A method characterized by irradiating light having a peak of a light intensity spectrum only to the following.
強度スペクトルのピークを有する光を発生する光源を用
いて行う請求項１記載の方法。2. The method according to claim 1, wherein the light irradiation is performed using a light source that generates light having a peak of a light intensity spectrum only at 500 nm or less.
クトルのピークを有する光を発生する光源からの光を高
波長成分カットフィルターを通して５００ｎｍ以下にの
み光強度スペクトルのピークを有する光とする系を用い
て行う請求項１記載の方法。3. The light irradiation is such that light from a light source that generates light having a peak of light intensity spectrum in the entire visible light is passed through a high wavelength component cut filter to light having a peak of light intensity spectrum only at 500 nm or less. The method according to claim 1, which is carried out using a system.
み光強度スペクトルのピークを有する請求項１〜３のい
ずれか１項記載の方法。4. The method according to claim 1, wherein the irradiation light has a peak of a light intensity spectrum only at 400 nm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984494A JPH07211162A (en) | 1994-01-21 | 1994-01-21 | Manufacture of transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984494A JPH07211162A (en) | 1994-01-21 | 1994-01-21 | Manufacture of transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07211162A true JPH07211162A (en) | 1995-08-11 |
Family
ID=12010575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984494A Pending JPH07211162A (en) | 1994-01-21 | 1994-01-21 | Manufacture of transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07211162A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004055233A1 (en) * | 2002-12-18 | 2004-07-01 | Sony Chemicals Corp. | Transparent conductive film and film forming method therefor |
| US7772749B2 (en) * | 2007-05-01 | 2010-08-10 | General Electric Company | Wavelength filtering coating for high temperature lamps |
-
1994
- 1994-01-21 JP JP1984494A patent/JPH07211162A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004055233A1 (en) * | 2002-12-18 | 2004-07-01 | Sony Chemicals Corp. | Transparent conductive film and film forming method therefor |
| US7294852B2 (en) | 2002-12-18 | 2007-11-13 | Sony Chemical & Information Device Corporation | Transparent conductive films and processes for forming them |
| US7772749B2 (en) * | 2007-05-01 | 2010-08-10 | General Electric Company | Wavelength filtering coating for high temperature lamps |
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