JPH07230731A - Gas insulated switchgear and gas insulated bushing - Google Patents
Gas insulated switchgear and gas insulated bushingInfo
- Publication number
- JPH07230731A JPH07230731A JP6018185A JP1818594A JPH07230731A JP H07230731 A JPH07230731 A JP H07230731A JP 6018185 A JP6018185 A JP 6018185A JP 1818594 A JP1818594 A JP 1818594A JP H07230731 A JPH07230731 A JP H07230731A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- insulating
- bushing
- conductor
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Gas-Insulated Switchgears (AREA)
- Insulators (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、ガス絶縁開閉装置及び
このガス絶縁開閉装置に使われるガス絶縁ブッシングに
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas-insulated switchgear and a gas-insulated bushing used in the gas-insulated switchgear.
【0002】[0002]
【従来の技術】従来のガス絶縁開閉装置の側面図の一例
を図9に示す。図9において、外周を軟鋼板で囲まれた
箱体1の内部は、縦に設けられた隔壁2によって、前方
の遮断器室3と後方の母線室4に気密に区画されてい
る。2. Description of the Related Art An example of a side view of a conventional gas-insulated switchgear is shown in FIG. In FIG. 9, the inside of the box 1 whose outer periphery is surrounded by a mild steel plate is airtightly divided into a circuit breaker chamber 3 in the front and a busbar chamber 4 in the rear by a partition wall 2 provided vertically.
【0003】このうち、遮断器室3には、真空遮断器5
が収納されている。隔壁2には、一対の絶縁スペーサ6
が上下に貫設されている。真空遮断器5の後方に突き出
た主回路導体7は、絶縁スペーサ6の前部に接続されて
いる。母線室4の中央部には、断路器8Aが三相分取り
付けられ、この断路器8Aの前側端子には、変流器9A
を介して、接続導体10で上側の絶縁スペーサ6の後部に
接続されている。Of these, a vacuum circuit breaker 5 is provided in the circuit breaker chamber 3.
Is stored. The partition wall 2 has a pair of insulating spacers 6
Are pierced vertically. The main circuit conductor 7 protruding to the rear of the vacuum circuit breaker 5 is connected to the front portion of the insulating spacer 6. A disconnector 8A for three phases is attached to the center of the busbar chamber 4, and a current transformer 9A is attached to a front terminal of the disconnector 8A.
Via the connection conductor 10 to the rear portion of the upper insulating spacer 6.
【0004】箱体1の天井部には、ガス絶縁ブッシング
11が三相分貫設されており、このガス絶縁ブッシング11
の下部端子は、断路器8Aの後部端子に接続している。
また、隔壁2の下部の後面には、断路器8Aと同定格・
同形式の断路器8Bが三相分取り付けれられており、上
部からL字形の導体12で下側の絶縁スペーサ6の後部端
子に接続されている。断路器8Bの下部端子は、接続導
体13で変流器9Bへ、更に接続導体14で計器用変成器15
へ接続されている。A gas-insulated bushing is provided on the ceiling of the box 1.
11 are pierced for three phases, and this gas-insulated bushing 11
The lower terminal of is connected to the rear terminal of the disconnector 8A.
Also, on the rear surface of the lower part of the partition 2, the same rating as the disconnector 8A
The same type of disconnecting switch 8B is attached for three phases, and is connected to the rear terminal of the lower insulating spacer 6 by an L-shaped conductor 12 from above. The lower terminal of the disconnector 8B is connected to the current transformer 9B by the connecting conductor 13, and further connected by the connecting conductor 14 to the transformer 15 for the measuring instrument.
Connected to.
【0005】箱体1の床面後部には、箱体1の設置面の
後部から、ケーブル16が立ち上げられ、このケーブル16
のケーブルヘッド17は、接続導体18で変流器9Bの後部
端子へ接続されている。ケーブルヘッド17の上部には、
避雷器19が箱体1の天井部に貫設され、この避雷器18の
下端はケーブルヘッド17に接離可能となっている。母線
室4には、絶縁ガスが封入されており、この絶縁ガスの
絶縁特性により、ガス絶縁開閉装置の縮小化が図られて
いる。At the rear of the floor of the box body 1, a cable 16 is raised from the rear of the installation surface of the box body 1.
The cable head 17 is connected to the rear terminal of the current transformer 9B by a connecting conductor 18. At the top of the cable head 17,
A lightning arrester 19 is provided through the ceiling of the box body 1, and the lower end of this lightning arrester 18 can be brought into contact with or separated from the cable head 17. The busbar chamber 4 is filled with an insulating gas, and the insulating property of this insulating gas allows the gas-insulated switchgear to be downsized.
【0006】図10は、このうち、ガス絶縁ブッシング11
の拡大縦断面図を示す。図10において、ガス絶縁ブッシ
ング11は、図9で示した箱体1の天井部のフランジ20に
取り付けられ、ガス絶縁ブッシング11によって、フラン
ジ20の上部の気中側と下部のガス側にガス区分されてい
る。ガス絶縁ブッシング11には、T字形の中心導体21の
外周に、エポキシ樹脂で注型された絶縁層22が形成され
ている。また、フランジ20との取付面には、Oリング23
が気密に押圧されている。FIG. 10 shows the gas insulating bushing 11 among them.
FIG. In FIG. 10, the gas insulating bushing 11 is attached to the flange 20 on the ceiling of the box body 1 shown in FIG. 9, and the gas insulating bushing 11 divides the gas into upper air side and lower gas side of the flange 20. Has been done. In the gas insulating bushing 11, an insulating layer 22 cast with epoxy resin is formed on the outer periphery of a T-shaped central conductor 21. In addition, the O-ring 23 is attached to the mounting surface with the flange 20.
Is airtightly pressed.
【0007】絶縁層22の外周の図10において点線部分に
は、導電塗料が塗布されており、接地層24が形成されて
いる。ガス絶縁ブッシング11の気中側は、ケーブル接続
用の貫通穴25が形成されている。また、ガス側は、フラ
ンジ取り付け部の接地層24に、中心導体21と平行な部分
とこの部分の下端に半円状の溝でなる、図示しない横断
面図では環状となる溝26が形成されている。。A conductive paint is applied to the outer peripheral portion of the insulating layer 22 in FIG. 10 to form a ground layer 24. A through hole 25 for connecting a cable is formed on the air side of the gas insulating bushing 11. Further, on the gas side, a portion parallel to the central conductor 21 and a semicircular groove at the lower end of this portion are formed in the grounding layer 24 of the flange attachment portion, and a groove 26 having an annular shape in a cross-sectional view not shown is formed. ing. .
【0008】[0008]
【発明が解決しようとする課題】従来のガス絶縁ブッシ
ングのガス室側の形状は、図10及び実開昭64-38717号公
報に開示されているように、フランジ取付部に、中心導
体と平行な半円球状の溝26が形成されている。これは、
SF6 ガスの絶縁特性が電界依存性であり、大気圧の場
合、許容電界強度 8.9kV/mm以下で絶縁設計する必要が
あるので、金属導体端部や絶縁沿面を丸く面取し、ま
た、シールドを取り付け電界を緩和して、最適化形状で
設計されている。As disclosed in FIG. 10 and Japanese Utility Model Laid-Open No. 64-38717, the shape of the conventional gas-insulated bushing on the gas chamber side is parallel to the center conductor at the flange mounting portion. A semi-spherical groove 26 is formed. this is,
The insulation characteristics of SF 6 gas depend on the electric field, and in the case of atmospheric pressure, it is necessary to design the insulation with an allowable electric field strength of 8.9 kV / mm or less, so round the metal conductor end and the insulation creeping surface, and It is designed with an optimized shape by attaching a shield and relaxing the electric field.
【0009】しかし、このような最適化形状で設計をし
た場合、注型用の金型の加工が複雑で、コストが高くな
るだけでなく、外形の縮小化が困難となる欠点がある。
そこで、本発明の目的は製作が容易で、かつ、外形を縮
小化することのできるガス絶縁開閉装置及び絶縁ブッシ
ングを得ることである。However, in the case of designing with such an optimized shape, there are drawbacks that the machining of the casting die is complicated, the cost is high, and it is difficult to reduce the outer shape.
Therefore, an object of the present invention is to obtain a gas-insulated switchgear and an insulating bushing which can be easily manufactured and whose outer shape can be reduced.
【0010】[0010]
【課題を解決するための手段】請求項1に記載の発明
は、絶縁ガスが封入された密封容器の内部に電気機器が
収納され、この電気機器に接続された導体が配設された
ガス絶縁開閉装置において、導体相互間又は導体と接地
電位間の電界の不平等係数を3〜11の範囲としたことを
特徴とする。According to a first aspect of the present invention, an electric device is housed in a hermetically sealed container in which an insulating gas is sealed, and a conductor connected to the electric device is disposed in the gas insulation. The switchgear is characterized in that the inequality coefficient of the electric field between the conductors or between the conductor and the ground potential is set in the range of 3 to 11.
【0011】また、請求項2に記載の発明は、絶縁ガス
が封入された密封容器の外壁に絶縁ブッシングが貫設さ
れたガス絶縁開閉装置において、絶縁ブッシングの密封
容器内端部の中心導体の外周の絶縁層を45度の傾斜の円
錐状とし、中心導体の密封容器内端部と絶縁ブッシング
固定側の接地電位間の電界の不平等係数を3〜11とした
ことを特徴とする。According to a second aspect of the present invention, in a gas-insulated switchgear in which an insulating bushing is provided through an outer wall of a hermetically sealed container in which an insulating gas is sealed, a center conductor of an inner end of the hermetically sealed container of the insulating bushing is provided. It is characterized in that the outer insulating layer has a conical shape with an inclination of 45 degrees and the inequality coefficient of the electric field between the inner end of the sealed container of the central conductor and the ground potential on the fixed side of the insulating bushing is 3 to 11.
【0012】また、請求項3に記載の発明は、絶縁ガス
が封入された密封容器の外壁に貫設され軸心に中心導体
が埋設された絶縁ブッシングにおいて、絶縁ブッシング
の密封容器内端部の絶縁層を45度の傾斜の円錐状とし、
この絶縁層の高さと外径の比を 0.4以下とし、絶縁層の
底部側に、絶縁ブッシングの外壁への取付面に端部が連
続する断面半円状の溝を中心導体と同軸に形成したこと
を特徴とする。Further, according to a third aspect of the present invention, in an insulating bushing that penetrates an outer wall of a hermetically sealed container in which an insulating gas is sealed and has a central conductor buried in an axial center, an inner end portion of the hermetically sealed container of the insulating bushing is provided. The insulating layer has a conical shape with an inclination of 45 degrees,
The ratio of the height to the outer diameter of this insulating layer was 0.4 or less, and a groove with a semicircular cross section was formed coaxially with the center conductor on the bottom side of the insulating layer, the end of which is continuous with the surface of the insulating bushing that is attached to the outer wall. It is characterized by
【0013】さらに、請求項4に記載の発明は、絶縁ガ
スが封入された密封容器の外壁のフランジ部に貫設され
軸心に中心導体が埋設された絶縁ブッシングにおいて、
絶縁ブッシングの密封容器内端部の絶縁層を45度の傾斜
の円錐状とし、フランジの厚さと絶縁層の高さの比を
0.2とし、絶縁層の底部側に、絶縁ブッシングの外壁へ
の取付面に端部が連続する断面半円状の溝を中心導体と
同軸に形成し、溝の幅と前記フランジの厚さを同一とし
たことを特徴とする。Further, the invention according to claim 4 is an insulating bushing in which a central conductor is embedded in an axial center by penetrating through a flange portion of an outer wall of a sealed container in which an insulating gas is sealed,
The insulating layer at the inner end of the sealed container of the insulating bushing has a conical shape with an inclination of 45 degrees, and the ratio of the thickness of the flange to the height of the insulating layer is
0.2, and on the bottom side of the insulating layer, a groove with a semicircular cross section is formed coaxially with the center conductor on the mounting surface of the insulating bushing to the outer wall, and the width of the groove and the thickness of the flange are the same. It is characterized by
【0014】[0014]
【作用】請求項1に記載の発明においては、不平等係数
を3〜11の範囲とすることにより、コロナ放電を経て後
絶縁破壊に至るので、耐電圧値が上昇する。また、請求
項2に記載の発明においては、密封容器内端部の中心導
体の外周の絶縁層を45度の傾斜の円錐状とし、密封容器
内端部と絶縁ブッシング固定側の接地電位間の電界の不
平等係数を3〜11とすることにより、コロナ安定化作用
によって耐電圧値が上昇する。In the invention described in claim 1, when the inequality coefficient is set in the range of 3 to 11, post-dielectric breakdown is caused through corona discharge, so that the withstand voltage value increases. Further, in the invention according to claim 2, the insulating layer on the outer periphery of the central conductor at the inner end of the sealed container is formed into a conical shape with an inclination of 45 degrees, and between the inner end of the sealed container and the ground potential on the fixed side of the insulating bushing. By setting the inequality coefficient of the electric field to 3 to 11, the withstand voltage value is increased by the corona stabilizing effect.
【0015】また、請求項3に記載の発明においては、
密封容器内端部の中心導体の外周の絶縁層を45度の傾斜
の円錐状とし、この絶縁層の高さと外径の比を 0.4以下
とし、外壁への取付面に端部が連続する断面半円状の溝
を中心導体と同軸に絶縁層の底部側に設けることで、耐
電圧値が上昇する。。Further, in the invention described in claim 3,
The insulating layer on the outer circumference of the central conductor at the inner end of the hermetically sealed container has a conical shape with an inclination of 45 degrees, and the ratio of the height to the outer diameter of this insulating layer is 0.4 or less. By providing the semicircular groove coaxially with the center conductor on the bottom side of the insulating layer, the withstand voltage value increases. .
【0016】さらに、請求項4に記載の発明において
は、密封容器内端部の中心導体の外周の絶縁層を45度の
傾斜の円錐状とし、フランジの厚さと絶縁層の高さの比
を 0.2とし、半円状の溝の幅とフランジの厚さを同一と
することで、耐電圧値が上昇する。Further, in the invention as set forth in claim 4, the insulating layer on the outer periphery of the central conductor at the inner end of the hermetically sealed container is formed into a conical shape having an inclination of 45 degrees, and the ratio of the thickness of the flange to the height of the insulating layer is made. By setting the width to 0.2 and making the width of the semicircular groove and the thickness of the flange the same, the withstand voltage value increases.
【0017】[0017]
【実施例】以下、本発明の一実施例を図面を参照して説
明する。実験に用いた電極形状を図1に示す。SF6 ガ
ス中で丸縁導体27と接地電位の平板電極28を用い、丸縁
導体27の端部の曲率半径、及び電極間の絶縁距離を変え
た。なお、絶縁ガスの圧力は0.10MPaである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. The electrode shape used in the experiment is shown in FIG. A round-edge conductor 27 and a plate electrode 28 having a ground potential were used in SF 6 gas, and the radius of curvature of the end portion of the round-edge conductor 27 and the insulating distance between the electrodes were changed. The pressure of the insulating gas is 0.10 MPa.
【0018】図1の実験結果を図2に示す。図2におい
て、実線Aはコロナ開始電界、BはAC商用周波電圧破
壊電界、実線Cはインパルス破壊電界である。不平等係
数fが 3.2以上では、コロナ開始電界よりAC商用周波
電圧破壊電界のほうが高い。しかし、不平等係数fが1
0.7以上では、インパルス破壊電界よりAC商用周波電
圧破壊電界のほうが高くなる。The experimental results of FIG. 1 are shown in FIG. In FIG. 2, solid line A is a corona starting electric field, B is an AC commercial frequency voltage breakdown electric field, and solid line C is an impulse breakdown electric field. When the inequality coefficient f is 3.2 or more, the AC commercial frequency voltage breakdown electric field is higher than the corona starting electric field. However, the inequality coefficient f is 1
At 0.7 or more, the AC commercial frequency voltage breakdown electric field is higher than the impulse breakdown electric field.
【0019】一般に、電機機器の規格では、AC商用耐
電圧よりもインパルス耐電圧のほうが高い。たとえば、
日本電気工業会規格(JEM1425−1987)「金属閉鎖形
スイッチギヤ及びコントロールギヤ」の定格電圧 7.2kV
の絶縁階級6Aでは、AC商用周波耐電圧22kV、インパ
ルス耐電圧60kVとなっている。したがって、不平等係数
fが10.7より大きい範囲では、絶縁強調上、インパルス
破壊電界が低いので利用しにくい。即ち、コロナ安定化
作用の利用できる範囲は、不平等係数fが 3.2〜10.7で
ある。Generally, according to the standard of electrical equipment, impulse withstand voltage is higher than AC commercial withstand voltage. For example,
Rated voltage 7.2kV of "closed metal switchgear and control gear" of the Japan Electrical Manufacturers' Association standard (JEM1425-1987)
In the insulation class 6A, the AC commercial frequency withstand voltage is 22 kV and the impulse withstand voltage is 60 kV. Therefore, when the inequality coefficient f is larger than 10.7, it is difficult to use because the impulse breakdown electric field is low in terms of insulation enhancement. That is, in the usable range of the corona stabilizing action, the inequality coefficient f is 3.2 to 10.7.
【0020】なお、丸縁導体27の端部を球電極に模擬し
た場合、この不平等係数fは、以下の式で求めることが
できる。 f={(r+a)/r}・0.9 上式は、球対平板電極の不平等係数であり、rは曲率半
径、aは電極間距離である。せん断加工で、r=1(m
m),a=10(mm)の場合、不平等係数fは、 9.9とな
る。したがって、不平等係数fを 3.2〜10.7で用いる
と、導体端部は面取り加工だけでよい。しかし、不平等
係数fが 3.2以下の場合、曲率半径が5mm以上となり、
機械加工が必要となる。このような特性は導体をブッシ
ングに取り付けるとき、導体端部とフランジとの絶縁距
離を決定するのに有効である。なお、ガス圧力が 0.2M
Pa以下と比較的低い範囲では、上記の特性は同様の傾
向を示す。When the end of the round-edge conductor 27 is simulated as a spherical electrode, the inequality coefficient f can be calculated by the following equation. f = {(r + a) / r} · 0.9 The above equation is the inequality coefficient of the sphere-to-plate electrode, r is the radius of curvature, and a is the distance between the electrodes. By shearing, r = 1 (m
In the case of m) and a = 10 (mm), the inequality coefficient f is 9.9. Therefore, when the inequality coefficient f is used in the range of 3.2 to 10.7, the conductor end portion may be chamfered. However, when the inequality coefficient f is 3.2 or less, the radius of curvature becomes 5 mm or more,
Machining is required. Such characteristics are effective in determining the insulation distance between the conductor end and the flange when the conductor is attached to the bushing. The gas pressure is 0.2M
The above characteristics show the same tendency in a relatively low range of Pa or less.
【0021】以上は、金属導体について述べてきたが、
絶縁物でも同様な傾向が得られる。図3に、ガス絶縁ブ
ッシングの形状を示す。図3において、中心導体30の周
囲の上部には、エポキシ樹脂で注型された絶縁層31が円
錐状に形成されており、絶縁層31の沿面は、中心導体30
に対して45度(すなわち、円錐状の頂部の角度は90度)
の角度で形成されている。点線部には、導電塗料が塗布
されており、接地層32を形成している。The metal conductor has been described above,
A similar tendency is obtained with an insulator. FIG. 3 shows the shape of the gas insulating bushing. In FIG. 3, an insulating layer 31 cast with epoxy resin is formed in a conical shape in the upper part around the center conductor 30, and the creeping surface of the insulating layer 31 is the center conductor 30.
45 degrees (that is, the angle of the conical top is 90 degrees)
Is formed at an angle of. A conductive paint is applied to the dotted line portion to form the ground layer 32.
【0022】図4は、絶縁層31の高さHに対する絶縁特
性を示す。絶縁層31の外径Dを60mmに固定し、絶縁層31
の高さHを変えると、絶縁層の高さHと外径Dの比が
0.4以下では、絶縁層31の高さを減らしていくと、フラ
ッシュオーバ電圧が向上する。これは中心導体方向の電
界が高く、沿面の電界が低いためである。また、 0.4を
越えても、フラッシュオーバ電圧が上昇しているが、絶
縁層を無限に高くする必要があり縮小化を図る上では採
用できない。したがって、絶縁層の高さと外径の比が
0.4以下では、図5に示す溝35が形成されたブッシング
とする。また、絶縁層の高さと外径の比が、 0.4を越え
るときには、図5と溝の断形状の異なる図6に示す溝39
が形成されたブッシングとする。FIG. 4 shows the insulating characteristics with respect to the height H of the insulating layer 31. The outer diameter D of the insulating layer 31 is fixed to 60 mm, and the insulating layer 31
When the height H of the insulating layer is changed, the ratio of the height H of the insulating layer to the outer diameter D becomes
Below 0.4, the flashover voltage improves as the height of the insulating layer 31 is reduced. This is because the electric field in the central conductor direction is high and the electric field in the creeping plane is low. Although the flashover voltage is increased even if it exceeds 0.4, it cannot be adopted in order to reduce the size because the insulating layer needs to be infinitely high. Therefore, the ratio of the height of the insulating layer to the outer diameter is
Below 0.4, the bushing has the groove 35 shown in FIG. When the ratio of the height of the insulating layer to the outer diameter exceeds 0.4, the groove 39 shown in FIG.
And the bushing is formed.
【0023】図5において、絶縁層34の高さHと直径D
の比が 0.4以下で使用する場合、フランジ取付部の絶縁
層34の下部に中心導体33と対向する断面半円状の溝35を
同軸に形成する。また、図5において外周の点線部に
は、導電塗料が塗布されており、接地層36が形成されて
いる。次に、図6において、絶縁高さH1と直径D1の
比が 0.4超過で使用する場合、フランジ取り付け部の絶
縁層38に、中心導体37と平行する部分を備えた断面半円
状の溝39を同軸に形成する。また、点線部には、図5と
同様に導電塗料が塗布されており、接地層40が形成され
ている。In FIG. 5, the height H and the diameter D of the insulating layer 34 are shown.
When the ratio is less than 0.4, the groove 35 having a semicircular cross section facing the central conductor 33 is coaxially formed in the lower part of the insulating layer 34 of the flange mounting portion. Further, in FIG. 5, a conductive paint is applied to a dotted line portion on the outer periphery, and a ground layer 36 is formed. Next, in FIG. 6, when the insulating height H1 and the diameter D1 are used in a ratio of more than 0.4, a groove 39 having a semicircular cross section having a portion parallel to the central conductor 37 is formed in the insulating layer 38 of the flange mounting portion. Are formed coaxially. Further, a conductive paint is applied to the dotted line portion as in FIG. 5, and a ground layer 40 is formed.
【0024】図7は、絶縁層の高さを50mmに固定し、フ
ランジの厚さを変えたときのブッシングのインパルスフ
ラッシュオーバ特性を示す。図7に示すように、フラン
ジの厚さを変えると、フランジの厚さと絶縁高さの比が
0.2で最大値となる。FIG. 7 shows the impulse flashover characteristic of the bushing when the height of the insulating layer is fixed to 50 mm and the thickness of the flange is changed. As shown in Fig. 7, if the thickness of the flange is changed, the ratio of the thickness of the flange to the insulation height becomes
The maximum value is 0.2.
【0025】図8は、ブッシングの取付状態を示す。図
8において、フランジ45の取り付け部の絶縁層に、中心
導体41と対向する半円球状の溝43を形成する。また、点
線部には、導電塗料が塗布されており、接地層44が形成
されている。ブッシングは、フランジ45に取り付けられ
ており、ブッシングとフランジ45の接触面は、Oリング
46で密着されている。フランジ45の厚さは、半円球状の
溝43の直径と同じ高さにする。FIG. 8 shows how the bushing is attached. In FIG. 8, a semi-spherical groove 43 facing the central conductor 41 is formed in the insulating layer at the mounting portion of the flange 45. In addition, a conductive paint is applied to the dotted line portion, and a ground layer 44 is formed. The bushing is attached to the flange 45, and the contact surface between the bushing and the flange 45 is an O-ring.
Closely attached at 46. The thickness of the flange 45 is the same height as the diameter of the hemispherical groove 43.
【0026】本発明は、不平等電界領域において、不平
等係数が 3.2〜10.7の範囲でコロナ安定化作用が利用で
き、耐電圧が上昇する。また、絶縁層の高さと外径の比
0.4を境界に、 0.4以下では、中心導体と対向する半円
球状の溝とし、 0.4を超えると、中心導体と平行する半
円球状の溝を形成することにより接地構造を変えること
ができる。したがって、これらは、加工上、中心導体を
中心に二分割注型が可能となり、加工が容易であるた
め、製作が容易となるだけでなく、縮小化を図ることも
できる。In the present invention, in the unequal electric field region, the corona stabilizing action can be utilized within the range of the inequality coefficient of 3.2 to 10.7, and the withstand voltage is increased. Also, the ratio of the height of the insulating layer to the outer diameter
With 0.4 as the boundary, below 0.4, a semi-spherical groove facing the central conductor is formed, and above 0.4, a semi-spherical groove parallel to the central conductor is formed to change the ground structure. Therefore, in terms of processing, these can be cast in two parts centering on the central conductor, and because they are easy to process, not only can they be easily manufactured, but they can also be reduced in size.
【0027】[0027]
【発明の効果】以上、請求項1に記載の発明によれば、
絶縁ガスが封入された密封容器の内部に電気機器が収納
され、この電気機器に接続された導体が配設されたガス
絶縁開閉装置において、導体相互間又は導体と接地電位
間の電界の不平等係数を3〜11の範囲とすることで、コ
ロナ放電を経た後絶縁破壊に至り、耐電圧値を上昇させ
たので、加工が容易で、かつ、外形を縮小化することの
できる絶縁ブッシングを得ることができる。As described above, according to the invention of claim 1,
In a gas-insulated switchgear in which electrical equipment is housed inside a sealed container filled with insulating gas and conductors connected to this electrical equipment are arranged, inequalities in electric field between conductors or between conductor and ground potential By setting the coefficient in the range of 3 to 11, dielectric breakdown occurs after corona discharge and the withstand voltage value is increased, so that an insulating bushing that is easy to process and that can be reduced in outer shape is obtained. be able to.
【0028】また、請求項2に記載の発明によれば、絶
縁ガスが封入された密封容器の外壁に絶縁ブッシングが
貫設されたガス絶縁開閉装置において、絶縁ブッシング
の密封容器内端部の中心導体の外周の絶縁層を45度の傾
斜の円錐状とし、中心導体の密封容器内端部と絶縁ブッ
シング固定側の接地電位間の電界の不平等係数を3〜11
とすることで、コロナ安定化作用によって、耐電圧値を
上昇させたので、加工が容易で、かつ、外形を縮小化す
ることのできる絶縁ブッシングを得ることができる。According to a second aspect of the present invention, in a gas-insulated switchgear in which an insulating bushing is provided through the outer wall of a hermetically sealed container in which an insulating gas is sealed, the center of the inner end of the hermetically sealed container of the insulating bushing is provided. The insulating layer on the outer circumference of the conductor has a conical shape with an inclination of 45 degrees, and the inequality coefficient of the electric field between the inner end of the sealed container of the central conductor and the ground potential on the fixed side of the insulating bushing is 3-11.
By so doing, the withstand voltage value is increased by the corona stabilizing action, so that it is possible to obtain an insulating bushing which is easy to process and whose outer shape can be reduced.
【0029】また、請求項3に記載の発明によれば、絶
縁ガスが封入された密封容器の外壁に貫設され軸心に中
心導体が埋設された絶縁ブッシングにおいて、絶縁ブッ
シングの密封容器内端部の絶縁層を45度の傾斜の円錐状
とし、この絶縁層の高さと外径の比を 0.4以下とし、絶
縁層の底部側に、絶縁ブッシングの外壁への取付面に端
部が連続する断面半円状の溝を中心導体と同軸に形成す
ることで耐電圧値を上げたので、加工が容易で、かつ、
外形を縮小化することのできる絶縁ブッシングを得るこ
とができる。According to a third aspect of the present invention, in an insulating bushing having an axial center and a central conductor buried in the outer wall of the hermetically sealed container in which the insulating gas is sealed, the inner end of the hermetically sealed container of the insulating bushing is provided. The insulating layer of the part is conical with an inclination of 45 degrees, the ratio of the height of the insulating layer to the outer diameter is 0.4 or less, and the end is continuous with the bottom surface of the insulating layer and the mounting surface to the outer wall of the insulating bushing. Since the withstand voltage value was increased by forming the groove with a semicircular cross section coaxially with the center conductor, it is easy to process and
It is possible to obtain an insulating bushing whose outer shape can be reduced.
【0030】さらに、請求項4に記載の発明によれば、
絶縁ガスが封入された密封容器の外壁のフランジ部に貫
設され軸心に中心導体が埋設された絶縁ブッシングにお
いて、絶縁ブッシングの密封容器内端部の絶縁層を45度
の傾斜の円錐状とし、フランジの厚さと絶縁層の高さの
比を 0.2とし、絶縁層の底部側に、絶縁ブッシングの外
壁への取付面に端部が連続する断面半円状の溝を中心導
体と同軸に形成し、溝の幅と前記フランジの厚さを同一
とすることで、耐電圧値を上げたので、加工が容易で、
かつ、外形を縮小化することのできる絶縁ブッシングを
得ることができる。Further, according to the invention of claim 4,
In an insulating bushing that penetrates through the flange of the outer wall of the sealed container in which the insulating gas is filled and has a central conductor embedded in the shaft center, the insulating layer at the inner end of the sealed container of the insulating bushing has a conical shape with an inclination of 45 degrees. , The ratio of the thickness of the flange to the height of the insulating layer is 0.2, and a groove with a semicircular cross section is formed coaxially with the center conductor on the bottom side of the insulating layer, the end of which is continuous with the surface where the insulating bushing is attached to the outer wall. However, since the withstand voltage value was increased by making the width of the groove the same as the thickness of the flange, it is easy to process,
In addition, it is possible to obtain an insulating bushing whose outer shape can be reduced.
【図1】本発明のガス絶縁開閉装置及びガス絶縁ブッシ
ングの一実施例を示す説明図。FIG. 1 is an explanatory view showing an embodiment of a gas-insulated switchgear and a gas-insulated bushing of the present invention.
【図2】本発明のガス絶縁開閉装置及びガス絶縁ブッシ
ングの作用を示すグラフ。FIG. 2 is a graph showing the operation of the gas-insulated switchgear and the gas-insulated bushing of the present invention.
【図3】本発明のガス絶縁開閉装置及びガス絶縁ブッシ
ングの一実施例を示す部分断面図。FIG. 3 is a partial cross-sectional view showing an embodiment of the gas-insulated switchgear and the gas-insulated bushing of the present invention.
【図4】本発明のガス絶縁開閉装置及びガス絶縁ブッシ
ングの図2と異なる作用を示すグラフ。FIG. 4 is a graph showing an operation of the gas-insulated switchgear and the gas-insulated bushing of the present invention, which is different from FIG.
【図5】本発明のガス絶縁開閉装置及びガス絶縁ブッシ
ングの他の実施例を示す部分断面図。FIG. 5 is a partial cross-sectional view showing another embodiment of the gas-insulated switchgear and the gas-insulated bushing of the present invention.
【図6】本発明のガス絶縁開閉装置及びガス絶縁ブッシ
ングの異なる他の実施例を示す部分断面図。FIG. 6 is a partial cross-sectional view showing another embodiment of the gas insulated switchgear and the gas insulated bushing of the present invention.
【図7】本発明のガス絶縁開閉装置及びガス絶縁開閉装
置の図2及び図4と異なる作用を示すグラフ。FIG. 7 is a graph showing an operation of the gas-insulated switchgear and the gas-insulated switchgear according to the present invention, which is different from FIGS. 2 and 4.
【図8】本発明のガス絶縁開閉装置及びガス絶縁開閉装
置の更に異なる他の実施例を示す部分断面図。FIG. 8 is a partial sectional view showing still another embodiment of the gas insulated switchgear and the gas insulated switchgear of the present invention.
【図9】従来のガス絶縁開閉装置の一例を示す右側面
図。FIG. 9 is a right side view showing an example of a conventional gas-insulated switchgear.
【図10】従来のガス絶縁ブッシングの一例を示す断面
図。FIG. 10 is a sectional view showing an example of a conventional gas insulation bushing.
1…箱体、2…隔壁、3…遮断器室、4…母線室、5…
真空遮断器、6…絶縁スペーサ、7…主回路導体、8
A,8B…断路器、9A,9B…変流器、10…接続導
体、11…ガス絶縁ブッシング、31,34,38…絶縁層、3
2,36,40…接地層。1 ... Box body, 2 ... Partition wall, 3 ... Circuit breaker room, 4 ... Bus room, 5 ...
Vacuum circuit breaker, 6 ... Insulating spacer, 7 ... Main circuit conductor, 8
A, 8B ... Disconnector, 9A, 9B ... Current transformer, 10 ... Connection conductor, 11 ... Gas insulation bushing, 31, 34, 38 ... Insulation layer, 3
2, 36, 40 ... Ground layer.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮川 勝 東京都府中市東芝町1番地 株式会社東芝 府中工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masaru Miyagawa No. 1 Toshiba-cho, Fuchu-shi, Tokyo Toshiba Corporation Fuchu factory
Claims (4)
電気機器が収納され、この電気機器に接続された導体が
配設されたガス絶縁開閉装置において、前記導体相互間
又は前記導体と接地電位間の電界の不平等係数を3〜11
の範囲としたことを特徴とするガス絶縁開閉装置。1. A gas-insulated switchgear in which an electric device is housed in a hermetically sealed container in which an insulating gas is sealed, and a conductor connected to the electric device is disposed, between the conductors or between the conductor and the ground. The inequality coefficient of the electric field between the electric potentials is 3 to 11
Gas-insulated switchgear characterized by having the range of
絶縁ブッシングが貫設されたガス絶縁開閉装置におい
て、前記絶縁ブッシングの密封容器内端部の中心導体の
外周の絶縁層を45度の傾斜の円錐状とし、前記中心導体
の密封容器内端部と前記絶縁ブッシング固定側の接地電
位間の電界の不平等係数を3〜11としたことを特徴とす
るガス絶縁開閉装置。2. A gas-insulated switchgear in which an insulating bushing is provided through an outer wall of a hermetically sealed container in which an insulating gas is sealed. A gas insulated switchgear having an inclined conical shape, and an inequality coefficient of an electric field between an inner end of the sealed container of the central conductor and a ground potential on the fixed side of the insulating bushing is set to 3 to 11.
貫設され軸心に中心導体が埋設された絶縁ブッシングに
おいて、前記絶縁ブッシングの密封容器内端部の絶縁層
を45度の傾斜の円錐状とし、この絶縁層の高さと外径の
比を 0.4以下とし、前記絶縁層の底部側に、前記絶縁ブ
ッシングの前記外壁への取付面に端部が連続する断面半
円状の溝を前記中心導体と同軸に形成したことを特徴と
する絶縁ブッシング。3. An insulating bushing in which an outer wall of a hermetically-sealed container in which an insulating gas is filled is penetrated and a central conductor is buried in an axial center, wherein an insulating layer at an inner end of the hermetically-sealed container of the insulating bushing is inclined at 45 degrees. A conical shape, the ratio of the height of the insulating layer to the outer diameter is 0.4 or less, and a groove having a semicircular cross section whose end portion is continuous with the mounting surface of the insulating bushing to the outer wall is formed on the bottom side of the insulating layer. An insulating bushing formed coaxially with the central conductor.
フランジ部に貫設され軸心に中心導体が埋設された絶縁
ブッシングにおいて、前記絶縁ブッシングの密封容器内
端部の絶縁層を45度の傾斜の円錐状とし、前記フランジ
の厚さと前記絶縁層の高さの比を 0.2とし、前記絶縁層
の底部側に、前記絶縁ブッシングの前記外壁への取付面
に端部が連続する断面半円状の溝を前記中心導体と同軸
に形成し、前記溝の幅と前記フランジの厚さを同一とし
たことを特徴とする絶縁ブッシング。4. An insulating bushing in which a central conductor is embedded in an axial center through a flange portion of an outer wall of a hermetically sealed container in which an insulating gas is sealed, wherein an insulating layer at an inner end of the hermetically sealed container of the insulating bushing is 45 degrees. And the ratio of the thickness of the flange to the height of the insulating layer is 0.2, and the end of the insulating bushing is continuous with the bottom surface of the insulating layer. An insulating bushing in which a circular groove is formed coaxially with the central conductor, and the width of the groove and the thickness of the flange are the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01818594A JP3585517B2 (en) | 1994-02-15 | 1994-02-15 | Gas insulated bushing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01818594A JP3585517B2 (en) | 1994-02-15 | 1994-02-15 | Gas insulated bushing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07230731A true JPH07230731A (en) | 1995-08-29 |
| JP3585517B2 JP3585517B2 (en) | 2004-11-04 |
Family
ID=11964560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01818594A Expired - Fee Related JP3585517B2 (en) | 1994-02-15 | 1994-02-15 | Gas insulated bushing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3585517B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002015645A (en) * | 2000-04-24 | 2002-01-18 | Mitsubishi Electric Corp | Vacuum insulated switchgear and manufacturing method thereof |
| US6392157B2 (en) | 2000-01-20 | 2002-05-21 | Mitsubishi Denki Kabushiki Kaisha | Device for bus coupling between enclosed switchboards with insulating gas sealed therein |
| JP2008245371A (en) * | 2007-03-26 | 2008-10-09 | Toshiba Corp | Cast insulator and method of manufacturing the same |
| JP2011233310A (en) * | 2010-04-26 | 2011-11-17 | Toshiba Corp | Vacuum circuit breaker |
-
1994
- 1994-02-15 JP JP01818594A patent/JP3585517B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6392157B2 (en) | 2000-01-20 | 2002-05-21 | Mitsubishi Denki Kabushiki Kaisha | Device for bus coupling between enclosed switchboards with insulating gas sealed therein |
| JP2002015645A (en) * | 2000-04-24 | 2002-01-18 | Mitsubishi Electric Corp | Vacuum insulated switchgear and manufacturing method thereof |
| JP2008245371A (en) * | 2007-03-26 | 2008-10-09 | Toshiba Corp | Cast insulator and method of manufacturing the same |
| JP2011233310A (en) * | 2010-04-26 | 2011-11-17 | Toshiba Corp | Vacuum circuit breaker |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3585517B2 (en) | 2004-11-04 |
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