JPH07234737A - シンク形成回路 - Google Patents

シンク形成回路

Info

Publication number: JPH07234737A
Authority: JP; Japan
Prior art keywords: transistor; circuit; coupled; current; electrode
Prior art date: 1993-10-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP24640294A

Other languages

English (en)

Japanese (ja)

Inventor

Neil C Bird

クリストファーバードニール

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Electronics NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-10-12

Filing date

1994-10-12

Publication date

1995-09-05

1994-10-12 Application filed by Philips Electronics NV filed Critical Philips Electronics NV

1995-09-05 Publication of JPH07234737A publication Critical patent/JPH07234737A/ja

Status Pending legal-status Critical Current

Links

230000015572 biosynthetic process Effects 0.000 title claims description 3
239000004020 conductor Substances 0.000 claims description 13
239000002800 charge carrier Substances 0.000 claims description 10
230000008878 coupling Effects 0.000 claims description 3
238000010168 coupling process Methods 0.000 claims description 3
238000005859 coupling reaction Methods 0.000 claims description 3
238000005516 engineering process Methods 0.000 abstract description 17
239000000969 carrier Substances 0.000 abstract description 5
239000003990 capacitor Substances 0.000 description 19
230000003321 amplification Effects 0.000 description 17
238000003199 nucleic acid amplification method Methods 0.000 description 17
238000000034 method Methods 0.000 description 14
239000010409 thin film Substances 0.000 description 13
239000004065 semiconductor Substances 0.000 description 10
238000010586 diagram Methods 0.000 description 9
230000000295 complement effect Effects 0.000 description 6
230000015654 memory Effects 0.000 description 6
239000000758 substrate Substances 0.000 description 6
230000008859 change Effects 0.000 description 5
230000006870 function Effects 0.000 description 5
229910052751 metal Inorganic materials 0.000 description 5
239000002184 metal Substances 0.000 description 5
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
229910052804 chromium Inorganic materials 0.000 description 4
239000011651 chromium Substances 0.000 description 4
239000000463 material Substances 0.000 description 4
239000011159 matrix material Substances 0.000 description 4
230000008569 process Effects 0.000 description 4
230000008901 benefit Effects 0.000 description 3
238000000151 deposition Methods 0.000 description 3
239000011521 glass Substances 0.000 description 3
239000004973 liquid crystal related substance Substances 0.000 description 3
229910052581 Si3N4 Inorganic materials 0.000 description 2
230000009471 action Effects 0.000 description 2
229910021417 amorphous silicon Inorganic materials 0.000 description 2
230000001678 irradiating effect Effects 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000012986 modification Methods 0.000 description 2
239000004033 plastic Substances 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
238000012935 Averaging Methods 0.000 description 1
239000004642 Polyimide Substances 0.000 description 1
238000009825 accumulation Methods 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
230000009286 beneficial effect Effects 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000000605 extraction Methods 0.000 description 1
239000010408 film Substances 0.000 description 1
238000005286 illumination Methods 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000001459 lithography Methods 0.000 description 1
RSMUVYRMZCOLBH-UHFFFAOYSA-N metsulfuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)NC1=NC(C)=NC(OC)=N1 RSMUVYRMZCOLBH-UHFFFAOYSA-N 0.000 description 1
238000000059 patterning Methods 0.000 description 1
229920001721 polyimide Polymers 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
230000001681 protective effect Effects 0.000 description 1

Classifications

- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Nonlinear Science (AREA)
Electromagnetism (AREA)
General Physics & Mathematics (AREA)
Radar, Positioning & Navigation (AREA)
Automation & Control Theory (AREA)
Control Of Electrical Variables (AREA)
Amplifiers (AREA)

JP24640294A 1993-10-12 1994-10-12 シンク形成回路 Pending JPH07234737A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
GB939320991A GB9320991D0 (en)	1993-10-12	1993-10-12	A circuit for providing a current source
GB9320991:4		1993-10-12

Publications (1)

Publication Number	Publication Date
JPH07234737A true JPH07234737A (ja)	1995-09-05

Family

ID=10743375

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP24640294A Pending JPH07234737A (ja)	1993-10-12	1994-10-12	シンク形成回路

Country Status (3)

Country	Link
EP (1)	EP0647894A2 (fr)
JP (1)	JPH07234737A (fr)
GB (1)	GB9320991D0 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005346603A (ja) *	2004-06-07	2005-12-15	Fujitsu Ltd	定電流回路

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2734378B1 (fr) *	1995-05-17	1997-07-04	Suisse Electronique Microtech	Circuit integre dans lequel certains composants fonctionnels sont amenes a travailler avec une meme caracteristique de fonctionnement
JP3171129B2 (ja) *	1996-11-01	2001-05-28	株式会社デンソー	定電流制御機能を有する乗員保護装置の駆動回路および定電流制御回路
EP0994402B1 (fr) *	1998-10-15	2003-04-23	Lucent Technologies Inc.	Miroir de courant
EP1004953B1 (fr) *	1998-11-25	2007-07-18	Siemens Aktiengesellschaft	Dispositif de commande d'un générateur de courant
WO2006040739A1 (fr) *	2004-10-13	2006-04-20	Koninklijke Philips Electronics, N.V.	Miroir de courant d'extremite superieure a ensemble de transistors exclusivement de type n
CN115079765B (zh) *	2022-08-23	2022-11-15	上海韬润半导体有限公司	线性稳压器及包括其的集成电路器件

1993
- 1993-10-12 GB GB939320991A patent/GB9320991D0/en active Pending
1994
- 1994-10-07 EP EP19940202907 patent/EP0647894A2/fr not_active Withdrawn
- 1994-10-12 JP JP24640294A patent/JPH07234737A/ja active Pending

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005346603A (ja) *	2004-06-07	2005-12-15	Fujitsu Ltd	定電流回路

Also Published As

Publication number	Publication date
GB9320991D0 (en)	1993-12-01
EP0647894A2 (fr)	1995-04-12

Publication	Publication Date	Title
US4407010A (en)	1983-09-27	Solid state image pickup device
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US4980546A (en)	1990-12-25	Photosensitive device of the type with amplification of the signal at the photosensitive dots
US7667754B2 (en)	2010-02-23	Amplifying solid-state imaging device
JPH0444465B2 (fr)	1992-07-21
JPH03831B2 (fr)	1991-01-09
JP6137522B2 (ja)	2017-05-31	光電変換装置のリセット方法と、光電変換装置、光電変換アレイ、および撮像装置
CN107393505B (zh)	2019-11-08	感光电路及感光电路驱动方法、显示装置
TW200400628A (en)	2004-01-01	Solid state imager and camera system
US4223330A (en)	1980-09-16	Solid-state imaging device
CN106254797A (zh)	2016-12-21	摄像装置
US9142579B2 (en)	2015-09-22	Photoelectric conversion cell and array, reset circuit and electrical signal sense control circuit therefor
US4593320A (en)	1986-06-03	Two-dimensional solid-state image pickup device
JPH0414545B2 (fr)	1992-03-13
US4109284A (en)	1978-08-22	Self-scanning photo-sensitive circuits
JPH07234737A (ja)	1995-09-05	シンク形成回路
EP0280097B1 (fr)	1992-01-22	Dispositif de transfert de charge avec circuit amplificateur
US6486470B2 (en)	2002-11-26	Compensation circuit for use in a high resolution amplified flat panel for radiation imaging
JPH01289381A (ja)	1989-11-21	増幅型固体撮像装置
JPH09168117A (ja)	1997-06-24	固体撮像素子
JPS58177086A (ja)	1983-10-17	固体撮像素子

JPH07234737A - シンク形成回路 - Google Patents

Info

Links

Classifications

Landscapes

Applications Claiming Priority (2)

Publications (1)

Family

ID=10743375

Family Applications (1)

Country Status (3)

Cited By (1)

Families Citing this family (6)

Cited By (1)

Also Published As

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