JPH0727121B2 - Solid-state imaging device - Google Patents

Solid-state imaging device

Info

Publication number
JPH0727121B2
JPH0727121B2 JP61028222A JP2822286A JPH0727121B2 JP H0727121 B2 JPH0727121 B2 JP H0727121B2 JP 61028222 A JP61028222 A JP 61028222A JP 2822286 A JP2822286 A JP 2822286A JP H0727121 B2 JPH0727121 B2 JP H0727121B2
Authority
JP
Japan
Prior art keywords
light
solid
plane
image
pixels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61028222A
Other languages
Japanese (ja)
Other versions
JPS62186218A (en
Inventor
信之 梶原
義博 宮本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61028222A priority Critical patent/JPH0727121B2/en
Publication of JPS62186218A publication Critical patent/JPS62186218A/en
Publication of JPH0727121B2 publication Critical patent/JPH0727121B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔概要〕 この発明は、受光面が光検知素子アレイである固体撮像
装置であって、撮像光学系の光路中にその光束と斜交し
且つ該光束の中心軸回りに回転し得る透明な平行平面板
が配設され、該平行平面板の回転に同期して個々の光検
知素子から検出される光軸回り複数領域の出力を画素と
して画像信号が形成されるように構成されている固体撮
像装置により、 画像信号の画素数を光検知素子アレイの画素数より増大
して、解像度向上を実現するものである。
DETAILED DESCRIPTION OF THE INVENTION [Outline] The present invention is a solid-state imaging device having a light-receiving surface as a light-sensing element array, which obliquely intersects a light beam in the optical path of an imaging optical system and has a center axis around the light beam. A transparent parallel plane plate that can be rotated is disposed, and an image signal is formed by using the output of a plurality of regions around the optical axis detected by each photodetection element as pixels in synchronization with the rotation of the parallel plane plate. With the solid-state image pickup device configured as described above, the number of pixels of the image signal is made larger than the number of pixels of the photodetector array to improve the resolution.

〔産業上の利用分野〕[Industrial application field]

本発明は固体撮像装置、特にその画像信号における画素
密度が光検知素子の密度より実効的に高められる固体撮
像装置の改善に関する。
The present invention relates to a solid-state image pickup device, and more particularly, to improvement of a solid-state image pickup device in which a pixel density in an image signal thereof is effectively higher than a density of a photodetector.

固体撮像装置の画像信号の解像度を向上するためにその
画素密度の増大が進められているが、パターンの微細化
等による光検知素子アレイの密度向上には種々の制約が
伴い、画像信号の画素密度を光検知素子アレイの密度よ
り実効的に高める手段を実現すれば解像度の向上に大き
い効果が得られる。
The pixel density of the solid-state image pickup device is being increased in order to improve the resolution of the image signal, but there are various restrictions in increasing the density of the photodetector array due to the miniaturization of the pattern, etc. If a means for effectively increasing the density higher than the density of the photodetector array is realized, a great effect can be obtained in improving the resolution.

〔従来の技術〕[Conventional technology]

半導体光検知素子には、pn接合を備え入射光に応じて起
電力を発生する光起電形、電気抵抗が入射光に応じて変
化する光伝導形、半導体基体に形成されたポテンシャル
井戸に入射光に応じたキャリアが蓄積されるMIS形など
があるが、固体撮像装置では通常2次元アレイ状に光検
知素子を配設する。
The semiconductor photodetector has a pn junction and is a photovoltaic type that generates an electromotive force according to incident light, a photoconductive type whose electric resistance changes according to incident light, and a potential well formed on a semiconductor substrate. Although there is a MIS type or the like in which carriers corresponding to light are accumulated, in a solid-state image pickup device, photodetection elements are usually arranged in a two-dimensional array.

この2次元光検知素子アレイの受光面に撮像光学系によ
り撮像対象物の像を形成して入射光に対応した電気信号
を各光検知素子から得、これを通常電荷結合装置(CC
D)で転送して逐次検出し、時系列多重化された画像信
号を構成する。
An image of an object to be imaged is formed on the light receiving surface of this two-dimensional photodetector array by an image pickup optical system, and an electric signal corresponding to incident light is obtained from each photodetector.
In step D), the image signals are time-sequentially multiplexed and sequentially detected to form an image signal.

この様に電荷を蓄積、転送する手段が必要であるために
光検知素子の受光面積が大幅に制限され、結像面をマト
リクス状に等分した画素面積に対する比率は例えば25%
程度に止まっている。
Since the means for accumulating and transferring electric charges is required in this way, the light receiving area of the photodetector is greatly limited, and the ratio to the pixel area obtained by equally dividing the image plane into a matrix is, for example, 25%.
It has stopped to some extent.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

画像信号の解像度を向上するためにパターン縮小による
光検知素子アレイの素子密度の増大、そのための電荷蓄
積、転送手段の改善も進められているが、電荷蓄積、転
送手段のパターン縮小は読出す電荷量を確保するために
は望ましいことではなく、この方法による大幅の密度増
大は制約が多い。
In order to improve the resolution of the image signal, the element density of the photo-detecting element array is increased by pattern reduction, and charge storage and transfer means are improved for that purpose. It is not desirable to secure the quantity, and the large increase in density by this method is very limited.

この様な状況から、本発明は画像信号の画素密度を光検
知素子の密度より実効的に高めることにより、画像の解
像度を大幅に向上することを目的とする。
Under such circumstances, it is an object of the present invention to significantly improve the resolution of an image by effectively increasing the pixel density of the image signal more than the density of the photo detector.

〔問題点を解決するための手段〕[Means for solving problems]

前記問題点は、受光面が光検知素子アレイである固体撮
像装置であって、撮像光学系の光路中にその光束と斜交
し且つ該光束の中心軸回りに回転し得る透明な平行平面
板が配設され、該平行平面板の回転に同期して個々の光
検知素子から検出される光軸回り複数領域の出力を画素
として画像信号が形成されるように構成されている本発
明になる固体撮像装置により解決される。
The above-mentioned problem is a solid-state imaging device having a light-receiving surface as an array of light-sensing elements, which is a transparent plane-parallel plate that obliquely intersects the light beam in the optical path of the imaging optical system and can rotate around the central axis of the light beam. In the present invention, an image signal is formed with the outputs of a plurality of regions around the optical axis detected by the individual photo-sensing elements as pixels in synchronism with the rotation of the plane-parallel plate. It is solved by a solid-state imaging device.

〔作用〕[Action]

第1図は本発明による固体撮像装置を示す模式図であ
る。同図(a)はその撮像部の構造を示す模式図で、2
は撮像光学系、3は2次元光検知素子アレイであり、1
は撮像光学系2の光軸に斜交して回転する透明な平行平
面板である。また同図(b)は2次元光検知素子アレイ
3の部分模式平面図で、斜線で示す3A、3B、3C等は各光
検知素子、破線で示す3Aa、3Ab、3Ac、3Ad等は平行平面
板1を設けない場合の撮像対象像の画素を示す。
FIG. 1 is a schematic diagram showing a solid-state imaging device according to the present invention. FIG. 2A is a schematic diagram showing the structure of the image pickup unit.
Is an image pickup optical system, 3 is a two-dimensional photodetector array, and 1
Is a transparent plane-parallel plate that rotates obliquely to the optical axis of the imaging optical system 2. Also, FIG. 2B is a partial schematic plan view of the two-dimensional photodetector array 3, in which 3A, 3B, 3C and the like indicated by diagonal lines are photodetector elements, and 3Aa, 3Ab, 3Ac, 3Ad and the like indicated by broken lines are parallel planes. 3 shows pixels of an image to be captured when the face plate 1 is not provided.

この様に光線が平行平面板1に斜めに入射すれば出射光
が入射光に対して平行にシフトするために、例えば撮像
対象像の画素3Aaを光検知素子3A上に入射させることが
でき、平行平面板1に光軸の回りで回転すれば、例えば
光検知素子3Aに入射する撮像対象像の画素は3Aa→3Ab→
3Ac→3Adと順次移動する。
In this way, when the light rays are obliquely incident on the plane-parallel plate 1, the emitted light is shifted in parallel to the incident light, so that, for example, the pixel 3Aa of the image to be imaged can be incident on the photodetector 3A, If the plane-parallel plate 1 rotates around the optical axis, for example, the pixels of the image to be imaged incident on the photodetector 3A will be 3Aa → 3Ab →
It moves sequentially from 3Ac to 3Ad.

従って光検知素子3Aの出力を平行平面板1の回転に同期
して検出すれば、撮像対象像の領域3Aa、3Ab、3Ac、3Ad
に対応する電気信号が次々に得られる。
Therefore, if the output of the light detecting element 3A is detected in synchronization with the rotation of the plane-parallel plate 1, the areas 3Aa, 3Ab, 3Ac, 3Ad of the image to be imaged are detected.
The electric signals corresponding to are successively obtained.

〔実施例〕〔Example〕

以下本発明を実施例により具体的に説明する。 The present invention will be specifically described below with reference to examples.

第2図は本発明の実施例を示す模式図であり、1は平行
平面板、11はドラム、12はモーター、13は同期信号発生
回路、2は撮像光学系、3は2次元光検知素子アレイ、
4は信号検出回路、5はアナログ/ディジタル変換器、
6a、6b、6c、6dはフレームメモリである。
FIG. 2 is a schematic view showing an embodiment of the present invention, in which 1 is a plane parallel plate, 11 is a drum, 12 is a motor, 13 is a synchronizing signal generating circuit, 2 is an image pickup optical system, and 3 is a two-dimensional photodetector. array,
4 is a signal detection circuit, 5 is an analog / digital converter,
6a, 6b, 6c and 6d are frame memories.

本実施例では平行平面板1はドラム11内に装着され、こ
のドラム11は撮像光学系2の光軸に一致するその中心軸
の回りをモーター12により回転する。平行平面板1(ド
ラム11)の位相は例えば光学的方法で検出さ、同期信号
によってCCD等からなる信号検出回路4等の制御パルス
と同期する。
In this embodiment, the plane-parallel plate 1 is mounted in a drum 11, and the drum 11 is rotated by a motor 12 around its central axis that coincides with the optical axis of the image pickup optical system 2. The phase of the plane-parallel plate 1 (drum 11) is detected by, for example, an optical method, and is synchronized with the control pulse of the signal detection circuit 4 such as CCD by a synchronizing signal.

本実施例では先に第1図(b)に図示した様に、2次元
光検知素子アレイ3の各素子で撮像対象像の4画素を検
出する構成としており、各光検知素子で例えば同図左上
の各画素a、左下の各画素b、右下の各画素c、右上の
各画素dを順次検出する。
In this embodiment, as shown in FIG. 1 (b), each element of the two-dimensional photodetector array 3 detects four pixels of the image to be picked up. The upper left pixel a, the lower left pixel b, the lower right pixel c, and the upper right pixel d are sequentially detected.

信号検出回路4から読み出される信号は画素a、b、
c、d毎に時系列多重化されており、アナログ/ディジ
タル変換後画素a、b、c、d毎に一旦フレームメモリ
6a、6b、6c、6dに蓄積して撮像対象像の画素配列順に読
み出す。その後の信号処理は従来方法と同様でよい。
The signals read from the signal detection circuit 4 are the pixels a, b,
It is time-sequentially multiplexed for each of c and d, and a frame memory is temporarily provided for each pixel a, b, c, and d after analog / digital conversion.
The data is accumulated in 6a, 6b, 6c, and 6d and read out in the pixel array order of the image to be captured. The subsequent signal processing may be the same as the conventional method.

平行平面板1の材料、厚さ等の寸法、光軸に対する傾斜
角などは目的に応じて選択、設定するが、例えば波長3
〜5μm程度の赤外帯域に対してサファイア(Al2O3)
を用いれば屈折率n≒1.76で、第3図(a)に示す厚さ
d、入射角αに対する出射光のシルト量rは同図(b)
に例示する値となり、数10〜100μm程度のシフト量が
容易に実現される。
The material of the plane-parallel plate 1, the thickness, etc., the inclination angle with respect to the optical axis, etc. are selected and set according to the purpose.
Sapphire (Al 2 O 3 ) in the infrared band of ~ 5 μm
Is used, the refractive index n≈1.76, the thickness d shown in FIG. 3 (a), and the silt amount r of the emitted light with respect to the incident angle α are shown in FIG. 3 (b).
The shift amount of several tens to 100 μm is easily realized.

上記説明により明らかな様に、本実施例では画像信号の
画素数を光検知素子アレイの画素数の4倍に増大する効
果が得られる。しかも各光検知素子の受光面積の約3倍
の面積をCCD等に使用することができ、転送電荷量など
に対して余裕のある装置が容易に実現可能である。
As is clear from the above description, this embodiment has the effect of increasing the number of pixels of the image signal to four times the number of pixels of the photodetector array. Moreover, an area about three times as large as the light receiving area of each light detecting element can be used for the CCD or the like, and a device having a margin for the amount of transferred charges can be easily realized.

なお前記実施例では光検知素子1個によって撮像対象像
の4画素を検出しているが、この対応は目的に応じて種
々選択することが可能である。
It should be noted that in the above-described embodiment, four pixels of the image to be picked up are detected by one light detecting element, but this correspondence can be selected variously according to the purpose.

〔発明の効果〕〔The invention's effect〕

以上説明した如く本発明によれば、画像信号の画素数を
光検知素子アレイの画素数に対して大幅に増大する効果
が得られ、高密度の画像信号により解像度を飛躍的に向
上することが可能となる。
As described above, according to the present invention, the effect of significantly increasing the number of pixels of the image signal with respect to the number of pixels of the photodetector array can be obtained, and the resolution can be dramatically improved by the high density image signal. It will be possible.

しかも光検知素子アレイのパターン形成には十分な余裕
が与えられ、可視光の撮像、長波長赤外領域のサーモグ
ラフィなど広い応用分野に応用してその効果を実現する
ことが容易である。
Moreover, a sufficient margin is provided for the pattern formation of the photodetector array, and it is easy to realize the effect by applying it to a wide range of application fields such as visible light imaging and long-wavelength infrared thermography.

【図面の簡単な説明】 第1図は本発明による固体撮像装置の模式図、 同図(a)はその撮像部の構造を示す模式図、 同図(b)は光検知素子アレイの部分模式平面図、 第2図は本発明の実施例の模式図、 第3図(a)(b)は平行平面板による出射光のシフト
量の例を示す図である。 図において、 1は回転する平行平面板、2は撮像光学系、3は2次元
光検知素子アレイ、3A、3B、3C等は各光検知素子、3A
a、3Ab、3Ac、3Ad等は撮像対象像の画素、4は信号検出
回路、5はアナログ/ディジタル変換器、6a、6b,6c、6
dはフレームメモリ、11はドラム、12はモーター、13は
同期信号発生回路を示す。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of a solid-state image pickup device according to the present invention, FIG. 1A is a schematic diagram showing the structure of its image pickup portion, and FIG. 1B is a partial schematic diagram of a photodetector array. FIG. 3 is a plan view, FIG. 2 is a schematic view of an embodiment of the present invention, and FIGS. 3 (a) and 3 (b) are views showing examples of the shift amount of emitted light by a plane-parallel plate. In the figure, 1 is a rotating parallel plane plate, 2 is an imaging optical system, 3 is a two-dimensional photodetector array, 3A, 3B, 3C, etc. are photodetectors, 3A.
a, 3Ab, 3Ac, 3Ad, etc. are pixels of the image to be captured, 4 is a signal detection circuit, 5 is an analog / digital converter, 6a, 6b, 6c, 6
d is a frame memory, 11 is a drum, 12 is a motor, and 13 is a synchronizing signal generating circuit.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】受光面が光検知素子アレイである固体撮像
装置であって、 撮像光学系の光路中にその光束と斜交し且つ該光束の中
心軸回りに回転し得る透明な平行平面板が配設され、該
平行平面板の回転に同期して個々の光検知素子から検出
される光軸回り複数領域の出力を画素として画像信号が
形成されるように構成されていることを特徴とする固体
撮像装置。
1. A solid-state imaging device having a light-receiving surface as an array of light-sensing elements, the transparent plane-parallel plate being oblique to the light flux in the optical path of the imaging optical system and rotatable about the central axis of the light flux. Is arranged, and an image signal is formed with the outputs of a plurality of regions around the optical axis detected by the individual photo-sensing elements as pixels in synchronism with the rotation of the plane-parallel plate. Solid-state imaging device.
JP61028222A 1986-02-12 1986-02-12 Solid-state imaging device Expired - Lifetime JPH0727121B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61028222A JPH0727121B2 (en) 1986-02-12 1986-02-12 Solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61028222A JPH0727121B2 (en) 1986-02-12 1986-02-12 Solid-state imaging device

Publications (2)

Publication Number Publication Date
JPS62186218A JPS62186218A (en) 1987-08-14
JPH0727121B2 true JPH0727121B2 (en) 1995-03-29

Family

ID=12242586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61028222A Expired - Lifetime JPH0727121B2 (en) 1986-02-12 1986-02-12 Solid-state imaging device

Country Status (1)

Country Link
JP (1) JPH0727121B2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430631A (en) * 1987-07-24 1989-02-01 Matsushita Electric Industrial Co Ltd Burner
JPS6430629A (en) * 1987-07-24 1989-02-01 Matsushita Electric Industrial Co Ltd Burner
JPS6430628A (en) * 1987-07-24 1989-02-01 Matsushita Electric Industrial Co Ltd Burner
JPS6430627A (en) * 1987-07-24 1989-02-01 Matsushita Electric Industrial Co Ltd Air filter
JPH01137781A (en) * 1987-11-24 1989-05-30 Tokyo Electric Co Ltd Imaging device
CN113126407A (en) * 2019-12-31 2021-07-16 无锡视美乐激光显示科技有限公司 Micro-luminous array, method for adjusting image pixel gap and projection system
CN116805466A (en) * 2022-03-17 2023-09-26 深圳光峰科技股份有限公司 Control method of micro light-emitting device and micro light-emitting device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170614U (en) * 1982-05-11 1983-11-14 日本電気株式会社 Optical axis adjustment device
JPS6027278A (en) * 1983-07-25 1985-02-12 Fuji Photo Optical Co Ltd Solid-state image pickup camera

Also Published As

Publication number Publication date
JPS62186218A (en) 1987-08-14

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