JPH07337052A - Method for manufacturing optical distortion bimorph - Google Patents
Method for manufacturing optical distortion bimorphInfo
- Publication number
- JPH07337052A JPH07337052A JP14539994A JP14539994A JPH07337052A JP H07337052 A JPH07337052 A JP H07337052A JP 14539994 A JP14539994 A JP 14539994A JP 14539994 A JP14539994 A JP 14539994A JP H07337052 A JPH07337052 A JP H07337052A
- Authority
- JP
- Japan
- Prior art keywords
- photostrictive
- film
- material film
- bimorph
- photostrictive material
- Prior art date
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Abstract
(57)【要約】
【目的】 超小型・超薄型で、高応答性の光歪バイモル
フを容易に得ることができる製造方法を提供すること。
【構成】 基板１上に互いに離間した第一の電極パター
ン２１，２２を形成し、その上に光歪材組成物からなる
第一の光歪材膜３を前記電極パターンの夫々に接するよ
うに成膜する。続いて絶縁膜４を被着し、前記と同様に
してその上に第二の電極パターン５１，５２、及び第二
の光歪材膜６を成膜する。これらの工程中若しくはこれ
らの工程後に光歪材膜の焼結を行う。そして、前記の電
極パターンに夫々極性の異なる電圧を印加して前記第一
及び第二の光歪材膜３，６を異なる方向に分極させ、最
後に第一及び第二の電極パターンを導通させることによ
り光歪バイモルフが完成する。
(57) [Abstract] [Purpose] To provide a manufacturing method capable of easily obtaining a highly responsive optical strain bimorph which is ultra-small and ultra-thin. [Structure] First electrode patterns 21 and 22 spaced from each other are formed on a substrate 1, and a first photostrictive material film 3 made of a photostrictive material composition is in contact therewith so as to be in contact with each of the electrode patterns. Form a film. Then, the insulating film 4 is deposited, and the second electrode patterns 51 and 52 and the second photostrictive material film 6 are formed thereon in the same manner as described above. Sintering of the photostrictive material film is performed during or after these steps. Then, voltages having different polarities are applied to the electrode patterns to polarize the first and second photostrictive material films 3 and 6 in different directions, and finally the first and second electrode patterns are made conductive. This completes the optical distortion bimorph.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えばアクチュエータ
用部品等の用途に用いられる光歪バイモルフの製造方法
に関し、特にマイクロマシン部品用等の超小型・超薄型
の光歪バイモルフの作成に好適な製造方法に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a photostrictive bimorph used for parts such as actuator parts, and is particularly suitable for producing a microminiature and ultrathin photostrictive bimorph for micromachine parts. The present invention relates to a manufacturing method.
【０００２】[0002]
【従来の技術】光歪バイモルフは、光を照射すると伸長
する２つの光歪材を、分極の方向が互いに反対になるよ
うに並べてその両端に電極を設けて一体化することによ
り構成される。そして、一方の光歪材に光を照射すると
その光歪材が伸長すると共に電圧を発生し、その電圧が
前記電極を介して他方の光歪材（この場合電歪材として
作用する）に印加されることによりその光歪材が縮み、
結果として当該部材が光照射により湾曲するという動作
を行うものである。勿論、光照射を停止すると前記湾曲
変形は解除され、光照射前の形態に復元することとな
る。2. Description of the Related Art A photostrictive bimorph is formed by arranging two photostrictive materials, which expand when irradiated with light, so that their polarization directions are opposite to each other, and by providing electrodes at both ends thereof to integrate them. When one photostrictive material is irradiated with light, the photostrictive material expands and generates a voltage, and the voltage is applied to the other photostrictive material (in this case, it acts as an electrostrictive material) via the electrode. By doing so, the optical strain material shrinks,
As a result, the member performs an operation of being curved by light irradiation. Of course, when the light irradiation is stopped, the curved deformation is released, and the shape before the light irradiation is restored.
【０００３】従来光歪バイモルフは、光歪材原料となる
粉末を焼結したバルク材料から適当なサイズのシート状
に切り出し、高電圧を印加して分極処理を施し、その後
分極方向が互いに反対方向になるように２枚の光歪材シ
ートを貼り合わせ、その両端に電極を付設することによ
り製造されていた。In the conventional photostrictive bimorph, a powder which is a raw material for a photostrictive material is cut out from a bulk material obtained by sintering into a sheet of an appropriate size, a high voltage is applied to perform polarization treatment, and then the polarization directions are opposite to each other. Was manufactured by adhering two sheets of the optical strain material sheet to each other and attaching electrodes to both ends thereof.
【０００４】[0004]
【発明が解決しようとする課題】ところが上記の製造方
法では、例えばマイクロマシンのアクチュエータ用部材
として用い得るような超小型の光歪バイモルフは、前述
のように貼り合わせ工程が必要な点などから、非常に作
成が困難であるという問題があった。また、光歪バイモ
ルフの湾曲変形の応答速度を向上させるという観点から
は、光歪材層は薄いほうが好ましいが、この超薄型光歪
バイモルフもまた上記の製造方法では容易に得ることが
できないという問題があった。マイクロマシン用部品と
して用いるには超小型でかつ応答性が良好であることが
求められ、かかる光歪バイモルフは従来方法で到底得る
ことができなかった。However, in the above-mentioned manufacturing method, a microminiature optical strain bimorph which can be used as a member for an actuator of a micromachine, for example, requires a bonding step as described above, which is extremely difficult. There was a problem that it was difficult to create. Further, from the viewpoint of improving the response speed of the curved deformation of the photostrictive bimorph, it is preferable that the photostrictive material layer is thin, but this ultra-thin photostrictive bimorph cannot be easily obtained by the above manufacturing method. There was a problem. To be used as a part for micromachines, it is required to be ultra-compact and have good responsiveness, and such a photostrictive bimorph could not be obtained by the conventional method.
【０００５】従って本発明は、超小型・超薄型で、高応
答性の光歪バイモルフを容易に得ることができる製造方
法を提供することを目的とする。Therefore, it is an object of the present invention to provide a manufacturing method which makes it possible to easily obtain a highly responsive photostrictive bimorph which is ultra-compact and ultra-thin.
【０００６】[0006]
【課題を解決するための手段及び作用】本発明の光歪バ
イモルフの製造方法は、絶縁膜の両面に光歪材膜を備え
る積層体を成膜手段で形成する工程、及び前記光歪材膜
に夫々極性の異なる電圧を印加して互いに異なる方向に
分極させる工程とを含むことを特徴とするものである。
成膜手段、すなわちスパッタリング法などの薄膜作成技
術を用いることにより、極めて薄い光歪材層を形成する
ことができ、しかも順次膜を形成できるので上述の貼り
合わせ工程を不要とすることができる。また中間に絶縁
膜を介在させることにより、積層体形成後に各々の光歪
材膜に対してそれぞれ分極処理を行うことが可能とな
る。従って光歪材層の薄型化が容易に図れると共に、分
極処理後に積層体を分割する等の手段で容易に小型の光
歪バイモルフを得ることができる。The method for manufacturing a photostrictive bimorph according to the present invention comprises a step of forming a laminate having a photostrictive material film on both surfaces of an insulating film by a film forming means, and the photostrictive material film. And a step of applying voltages having different polarities to polarize in different directions.
By using a film forming means, that is, a thin film forming technique such as a sputtering method, an extremely thin photostrictive material layer can be formed, and since the films can be sequentially formed, the above-mentioned bonding step can be omitted. Further, by interposing the insulating film in the middle, it becomes possible to perform polarization processing on each of the photostrictive material films after the laminated body is formed. Therefore, the photostrictive material layer can be easily thinned, and a small photostrictive bimorph can be easily obtained by means such as dividing the laminated body after the polarization treatment.
【０００７】上記の積層体には、積層体を担持する基板
を付設されていることが望ましい。この基板は、絶縁
膜、光歪材膜を成膜する際の基材とすることができ、ま
た非常に薄い積層体に対する後の工程中における機械的
強度の補強体として機能させることができる。It is desirable that the above-mentioned laminated body is provided with a substrate for supporting the laminated body. This substrate can be used as a base material for forming an insulating film and a photostrictive material film, and can also function as a mechanical strength reinforcing member in a later step for a very thin laminated body.
【０００８】前記の光歪材膜は、その結晶性を向上させ
るために熱処理（焼結処理）を与えることが望ましい。
この焼結処理は光歪材膜の成膜後であっても、光歪材膜
の成膜中であっても良い。前者の場合、一度に両方の光
歪材膜を焼結できるので均質な焼結膜を得やすく、後者
の場合は別個に焼結処理の工程を要しないという利点が
それぞれある。The above-mentioned photostrictive material film is preferably subjected to heat treatment (sintering treatment) in order to improve its crystallinity.
This sintering treatment may be performed after the photostrictive material film is formed or during the formation of the photostrictive material film. In the former case, both photostrictive material films can be sintered at the same time, so that it is easy to obtain a homogeneous sintered film, and in the latter case, there is an advantage that a separate sintering process is not required.
【０００９】光歪材膜に夫々極性の異なる電圧を印加し
て互いに異なる方向に分極させるにあたり、前記光歪材
膜に一対の電極を夫々付設し、該電極を介して電圧を印
加する手段を採用することが、分極処理を容易に行い得
る点で好ましい。When applying voltages having different polarities to the photostrictive material films to polarize the films in different directions, a pair of electrodes are attached to the photostrictive material films, and a means for applying a voltage through the electrodes is provided. It is preferable to employ it because the polarization treatment can be easily performed.
【００１０】本発明のより具体的な製造方法は、少なく
とも表面に絶縁層を有する基板上に互いに離間した第一
の電極パターンを形成する工程、その上に光歪材組成物
からなる第一の光歪材膜を前記電極パターンの夫々に接
するように成膜する工程、前記第一の電極パターン及び
光歪材膜上に絶縁膜を被着する工程、前記絶縁膜上に互
いに離間した第二の電極パターンを形成する工程、その
上に光歪材組成物からなる第二の光歪材膜を前記電極パ
ターンの夫々に接するように成膜する工程、これらの工
程中若しくはこれらの工程後に行う前記光歪材膜の焼結
工程、前記第一及び第二の電極パターンに夫々極性の異
なる電圧を印加して前記第一及び第二の光歪材膜を異な
る方向に分極させる工程、及び前記第一及び第二の電極
パターンを導通させる工程とを含む光歪バイモルフの製
造方法である。また、上記の第一及び第二の光歪材膜を
異なる方向に分極させる工程の後に、必要に応じて基板
を除去するようにしても良い。A more specific manufacturing method of the present invention comprises a step of forming first electrode patterns separated from each other on a substrate having an insulating layer on at least the surface, and a first step comprising a photostrictive material composition thereon. A step of forming a photostrictive material film in contact with each of the electrode patterns, a step of depositing an insulating film on the first electrode pattern and the photostrictive material film, and a second step spaced from each other on the insulating film The step of forming an electrode pattern, a step of forming a second photostrictive material film made of a photostrictive material composition on the electrode pattern so as to be in contact with each of the electrode patterns, performed during or after these steps A step of sintering the photostrictive material film, applying voltages having different polarities to the first and second electrode patterns to polarize the first and second photostrictive material films in different directions, and Conduct the first and second electrode patterns Is that process the optical distortion bimorph manufacturing method comprising the. Further, the substrate may be removed as necessary after the step of polarizing the first and second photostrictive material films in different directions.
【００１１】上記の光歪材膜の成膜は、、例えばＰＬＺ
Ｔ（（Ｐｂ，Ｌａ）（Ｚｒ，Ｔｉ）Ｏ3 ）の焼結体をタ
ーゲット材とした酸素雰囲気中におけるスパッタリング
により形成することができる。また、各構成元素の酸化
物、前記ＰＬＺＴにおいては例えばＰｂＯ，Ｌａ
2 Ｏ3 ，ＺｒＯ2 ，ＴｉＯ2 をそれぞれターゲットとす
る多元スパッタリング法等も採用できる。さらに、光歪
材膜の組成比を厳格に制御したい場合、本出願人が先に
特開平６−１０１０２１号で提案した、合成物の各原料
を単体でカソード上に保持し、各ターゲット上の基板の
通過時間の制御若しくは各ターゲットへの印加電圧を制
御するスパッタリング法も好ましく採用することができ
る。The above-mentioned photostrictive material film is formed by, for example, PLZ.
It can be formed by sputtering in a oxygen atmosphere using a sintered body of T ((Pb, La) (Zr, Ti) O 3 ) as a target material. Further, oxides of the respective constituent elements, such as PbO and La in the PLZT,
It is also possible to employ a multi-source sputtering method in which 2 O 3 , ZrO 2 , and TiO 2 are used as targets. Further, when it is desired to strictly control the composition ratio of the photostrictive material film, each of the raw materials of the compound proposed by the present applicant in Japanese Patent Laid-Open No. 6-101021 was held alone on the cathode, A sputtering method in which the substrate passage time is controlled or the voltage applied to each target is controlled can also be preferably used.
【００１２】本発明においては上記以外の成膜手段、光
歪材膜構成材料も種々適用することが可能であり、成膜
手段としては例えばプラズマＣＶＤ法、常圧ＣＶＤ法、
低圧ＣＶＤ法などの各種ＣＶＤ法、或いは電子ビーム蒸
着法などの各種蒸着法等を採用することができる。また
光歪材膜構成材料としては上記ＰＬＺＴ以外に，例えば
ＰＺＴ（Ｐｂ（Ｚｒ，Ｔｉ）Ｏ3 ），ＰｂＴｉＯ3 ，Ｐ
ｂＺｒＯ3 ，ＬｉＮｂＯ3 ，ＢａＴｉＯ3 ，ＰｂＴｉＯ
3 ，ＢａＴｉＯ3 などを例示できる。In the present invention, various film forming means and photostrictive material film constituent materials other than those described above can be applied. As the film forming means, for example, plasma CVD method, atmospheric pressure CVD method,
Various CVD methods such as low pressure CVD method, various vapor deposition methods such as electron beam vapor deposition method, and the like can be adopted. Besides the above PLZT, as the material for forming the optical strain material film, for example, PZT (Pb (Zr, Ti) O 3 ), PbTiO 3 , P
bZrO 3 , LiNbO 3 , BaTiO 3 , PbTiO
3 , BaTiO 3 and the like can be exemplified.
【００１３】光歪材膜の厚さは、光歪バイモルフとして
の十分な湾曲力、すなわち当該光歪バイモルフをマイク
ロマシンのアクチュエータとして用いる場合に十分アク
チュエータ機能を発揮させ得る最低限の厚さを確保し、
一方でマイクロマシンへ容易に組み込み得るよう小形化
させる要望がある観点から、３〜５００μｍ、好ましく
は５〜２００μｍ、特に好ましくは１０〜１００μｍの
範囲で選択することが望ましい。The thickness of the photostrictive material film ensures a sufficient bending force as a photostrictive bimorph, that is, a minimum thickness capable of sufficiently exhibiting an actuator function when the photostrictive bimorph is used as an actuator of a micromachine. ,
On the other hand, from the viewpoint that there is a demand for miniaturization so that it can be easily incorporated into a micromachine, it is desirable to select in the range of 3 to 500 μm, preferably 5 to 200 μm, and particularly preferably 10 to 100 μm.
【００１４】また絶縁膜としては特に限定はなく各種の
ものが用い得るが、上記した成膜手段と同等な方法で形
成可能な材料を選択することが望ましく、例えばＳｉＯ
2 ，ＳｉＮ4 等を用いることができる。絶縁膜は、光歪
材膜に夫々極性の異なる電圧を印加して互いに異なる方
向に分極させる際の絶縁層として機能するものであり、
分極処理の際に十分な耐電圧性を発揮し得るような厚さ
が必要であり、その一方であまり厚すぎると光歪バイモ
ルフの動作性を低下させてしまうので、絶縁膜の厚さは
１〜１００μｍ，好ましくは３〜３０μｍの範囲で選択
することが望ましい。There are no particular restrictions on the insulating film, and various types can be used, but it is desirable to select a material that can be formed by a method equivalent to the above-mentioned film forming means.
2 , SiN 4 or the like can be used. The insulating film functions as an insulating layer when applying voltages having different polarities to the photostrictive material film to polarize the films in different directions,
The thickness of the insulating film is required to be sufficient so as to exhibit sufficient withstand voltage during the polarization treatment, and if it is too thick, the operability of the photostrictive bimorph will be reduced. ˜100 μm, preferably 3 to 30 μm.
【００１５】前述の積層体を成膜するにあたっては、通
常成膜ベースとなる基板が使用される。すなわち、基板
上にスパッタリング法などの成膜手段で、光歪材膜層及
び絶縁膜層を成長させるものである。なお光歪材膜は、
成膜中あるいは成膜後に熱処理（焼結処理）を行うの
で、基板材料は耐熱性を有していることが望ましい。さ
らに、成膜される積層体材料と熱膨脹係数や格子定数が
同一ないしは近似していることが望ましい。該基板とし
ては、例えばＳｉやＧａＡｓ等の半導体材料や、Ａｌ2
Ｏ3 ，ＳｒＴｉＯ3 等のセラミックスやサファイアなど
の各種絶縁材料を用いることができる。ただし、後の工
程での分極処理の際に高電圧を加える関係上、基板は絶
縁体であることが望ましく、半導体基板を用いる場合は
成膜面に酸化膜を形成するなどして絶縁処理を施す必要
がある。また基板は、少なくとも分極処理工程以降に、
通常はエッチングなどで取り除かれる。In depositing the above-mentioned laminated body, a substrate which is a deposition base is usually used. That is, the photostrictive material film layer and the insulating film layer are grown on the substrate by a film forming means such as a sputtering method. The optical strain material film is
Since heat treatment (sintering treatment) is performed during or after film formation, it is desirable that the substrate material have heat resistance. Furthermore, it is desirable that the layered material to be formed has the same or similar thermal expansion coefficient and lattice constant. As the substrate, for example, a semiconductor material such as Si or GaAs, Al 2
Various insulating materials such as ceramics such as O 3 and SrTiO 3 and sapphire can be used. However, it is desirable that the substrate is an insulator because a high voltage is applied during the polarization process in a later step. When a semiconductor substrate is used, the insulating process is performed by forming an oxide film on the film formation surface. Need to give. Further, the substrate, at least after the polarization treatment step,
Usually, it is removed by etching or the like.
【００１６】前記分極処理の際に、光歪材膜への高電圧
の印加を容易かつ確実とするために、光歪材膜に一対の
電極を夫々付設し、該電極を介して電圧を印加すること
が好ましい。この電極の付設は、積層体を作成後に別工
程で行っても良いが、積層体の成膜過程に同時に行うこ
とが好ましい。この方法の一例として、蒸気の基板上全
面にＡｕ，Ａｇ，Ｃｕなどの導電性金属を蒸着若しくは
メッキして導電層を設け、次いで基板の両端部上の導電
層のみを残すようにフォトリソグラフィーや選択エッチ
ング処理等を行って（パターニング）一対の電極とし、
その上に前記両電極上にそれぞれ跨がるように光歪材膜
を成膜する方法が例示できる。そしてその表面上に絶縁
膜を形成し、同様にして導電層の形成及びパターニング
を行った後、もう一方の光歪材膜を成膜すれば、各光歪
材膜にそれぞれ独立して電圧を印加できる電極を形成す
ることができる。During the polarization treatment, in order to easily and reliably apply a high voltage to the photostrictive material film, a pair of electrodes are attached to the photostrictive material film, and a voltage is applied via the electrodes. Preferably. The attachment of the electrodes may be performed in a separate step after the laminated body is formed, but it is preferable to perform the electrode attachment simultaneously with the film forming process of the laminated body. As an example of this method, a conductive metal such as Au, Ag, or Cu is vapor-deposited or plated on the entire surface of the vapor substrate to provide a conductive layer, and then photolithography or a photolithography method is performed to leave only the conductive layer on both ends of the substrate. Selective etching is performed (patterning) to form a pair of electrodes,
There can be exemplified a method of forming a photostrictive material film thereon so as to extend over both electrodes. Then, an insulating film is formed on the surface, a conductive layer is formed and patterned in the same manner, and then the other photostrictive material film is formed. An electrode that can be applied can be formed.
【００１７】光歪材膜の焼結は、通常５００〜８００℃
で数分〜数時間程度の熱処理にて行うことができる。こ
の焼結処理を光歪材膜の成膜後に行う場合は、例えば積
層体を加熱炉等に収納して前記の熱処理を行えば良く、
光歪材膜の成膜中に行う場合は、例えば上記の基板を上
記の温度に加熱しつつ成膜すれば良い。The sintering of the photostrictive material film is usually 500 to 800 ° C.
The heat treatment can be performed for several minutes to several hours. When this sintering treatment is performed after forming the photostrictive material film, for example, the laminated body may be housed in a heating furnace or the like and the heat treatment may be performed.
When the photostrictive material film is formed during film formation, the film may be formed while heating the above substrate to the above temperature.
【００１８】光歪材膜の分極は、光歪材膜を成膜した後
に当該光歪材膜へ高電圧を印加することにより行うこと
ができる。この分極処理の具体例を示せば、光歪材膜を
１５０℃程度に加熱したシリコーンオイル等の絶縁油中
に浸漬した状態で、光歪材膜に１〜３ｋＶ／ｍｍ２ の
電圧を印加することにより行うことができる。The polarization of the photostrictive material film can be performed by forming a photostrictive material film and then applying a high voltage to the photostrictive material film. To give a specific example of this polarization treatment, a voltage of 1 to 3 kV / mm2 is applied to the photostrictive material film while the photostrictive material film is immersed in an insulating oil such as silicone oil heated to about 150 ° C. Can be done by.
【００１９】[0019]
【実施例】以下図面に基づいて、本発明の一実施例を詳
細に説明する。図１（ａ）〜（ｉ）は、本発明にかかる
光歪バイモルフの製造方法を順を追って示した図であ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings. 1 (a) to 1 (i) are diagrams sequentially showing a method for manufacturing a photostrictive bimorph according to the present invention.
【００２０】まず、図１（ａ），（ｂ）に示すように、
Ｓｉ、セラミックス等からなる基板１を準備し、該基板
１表面の全面に、Ａｕ等からなる導電性膜２をスパッタ
リング法や真空蒸着法などで形成する。なお、基板１と
してＳｉ等の半導体を用いる場合は、導電性膜２の形成
前にその表面に酸化膜を形成するなどして絶縁処理を行
う。この場合において、酸化膜とＡｕ導電性膜２との密
着性を向上させるために、両者間にＣｒ薄膜（厚さ０．
０５〜０．２μｍ程度）等を介在させることが望まし
い。上記基板１の厚さは０．１〜２ｍｍ程度、導電性膜
２の厚さは１０〜１００μｍ程度が適当である。First, as shown in FIGS. 1 (a) and 1 (b),
A substrate 1 made of Si, ceramics or the like is prepared, and a conductive film 2 made of Au or the like is formed on the entire surface of the substrate 1 by a sputtering method, a vacuum evaporation method or the like. When a semiconductor such as Si is used as the substrate 1, an insulating film is formed on the surface of the conductive film 2 before the insulating film is formed. In this case, in order to improve the adhesion between the oxide film and the Au conductive film 2, a Cr thin film (having a thickness of 0.
It is desirable to interpose (for example, about 05 to 0.2 μm). It is suitable that the substrate 1 has a thickness of about 0.1 to 2 mm, and the conductive film 2 has a thickness of about 10 to 100 μm.
【００２１】次いで、図１（ｃ）に示すように、上記の
導電性膜２に対して化学エッチング等を施し、フォトリ
ソグラフィー法などでパターニングを行い、基板１の端
部に位置し、互いに離間するように設けられた第一の電
極パターン２１，２２を形成する。この電極パターン
は、後に行う分極処理の際の分極用電極として用いられ
るものである。Then, as shown in FIG. 1C, the conductive film 2 is subjected to chemical etching or the like and patterned by a photolithography method or the like so as to be positioned at the end portion of the substrate 1 and separated from each other. The first electrode patterns 21 and 22 provided so as to be formed are formed. This electrode pattern is used as a polarization electrode in the polarization process performed later.
【００２２】そしてその上に図１（ｄ）に示すように、
スパッタリング法等を用いてＰＬＺＴなどの光歪材組成
物を、上記電極パターン２１，２２にそれぞれ接するよ
うに成膜し、第一の光歪材膜３を形成する。この場合、
光歪材膜３を所望の形状とするため若しくは電極パター
ン２１，２２に分極処理時の電圧印加の際におけるリー
ド線の取付け部となる露出部を形成するために、基板１
上に適宜な形状のメタルマスクを被せるようにしても良
い。Then, as shown in FIG. 1 (d),
A photostrictive material composition such as PLZT is formed by a sputtering method or the like so as to be in contact with each of the electrode patterns 21 and 22 to form a first photostrictive material film 3. in this case,
In order to form the photostrictive material film 3 into a desired shape or to form exposed portions on the electrode patterns 21 and 22 which serve as mounting portions for lead wires when voltage is applied during polarization processing, the substrate 1
You may make it cover the metal mask of a suitable shape on it.
【００２３】その後、図１（ｅ）に示すように、電極パ
ターン２１，２２及び光歪材膜３を完全に覆うように、
ＳｉＯ2 ，ＳｉＮ4 等からなる絶縁膜４をスパッタリン
グ法やプラズマＣＶＤ法により成膜する。なお、図例の
ように光歪材膜３を基板１全表面上に設けない場合、段
差により光歪材膜３にコーナー部が生じてしまうが、一
般にコーナー部には十分な厚さの膜が被着しにくく、平
坦部と同レベルの厚さで絶縁膜４を形成できるという観
点よりは、プラズマＣＶＤ法が好ましい。After that, as shown in FIG. 1E, the electrode patterns 21 and 22 and the photostrictive material film 3 are completely covered.
The insulating film 4 made of SiO 2 , SiN 4 or the like is formed by a sputtering method or a plasma CVD method. If the photostrictive material film 3 is not provided on the entire surface of the substrate 1 as in the illustrated example, a corner portion is generated in the photostrictive material film 3 due to a step, but in general, a film having a sufficient thickness is formed in the corner portion. The plasma CVD method is preferable from the viewpoint that it is hard to adhere and the insulating film 4 can be formed with the same thickness as the flat portion.
【００２４】絶縁膜４の被着が完了したら、図１（ｆ）
に示すように、その上に先の工程で電極パターン２１，
２２の形成の際に行ったのと同様の手段で、導電性膜の
形成及びパターニングを施し、絶縁膜４の端部に位置
し、互いに離間するように設けられた第二の電極パター
ン５１，５２を形成する。この電極パターンもまた、後
に行う分極処理の際の分極用電極として用いられるもの
である。After the deposition of the insulating film 4 is completed, FIG.
As shown in FIG.
A conductive film is formed and patterned by the same means as that used to form the second electrode 22, and the second electrode patterns 51, which are provided at the end portions of the insulating film 4 and are spaced apart from each other, 52 is formed. This electrode pattern is also used as a polarization electrode in the polarization process performed later.
【００２５】続いて、図１（ｇ）に示すように、上記の
第一の光歪材膜３の形成手段と同様にしてＰＬＺＴなど
の光歪材組成物を、上記電極パターン５１，５２にそれ
ぞれ接するように成膜し、第二の光歪材膜６を形成す
る。以上の工程により、第一の光歪材膜３、絶縁膜４、
及び第二の光歪材膜６からなり、各光歪材膜３，６にそ
れぞれ一対の電極２１，２２及び５１，５２が付設され
た積層体が形成されることとなる。Subsequently, as shown in FIG. 1 (g), a photostrictive material composition such as PLZT is applied to the electrode patterns 51 and 52 in the same manner as the above-mentioned means for forming the first photostrictive material film 3. The second photostrictive material film 6 is formed so as to be in contact with each other. Through the above steps, the first photostrictive material film 3, the insulating film 4,
And a second photostrictive material film 6, and a pair of electrodes 21, 22 and 51, 52 is attached to each of the photostrictive material films 3, 6 to form a laminated body.
【００２６】上記積層体を得た後、光歪材膜の結晶性を
向上させるため、前記積層体を加熱雰囲気中に置いて焼
結処理が行われる。なお既述の通り、光歪材膜３，６を
成膜する際に基板１を加熱しておき、予め焼結を行うよ
うにしても良い。After obtaining the above-mentioned laminated body, in order to improve the crystallinity of the photostrictive material film, the laminated body is placed in a heating atmosphere and sintered. As described above, the substrate 1 may be heated when the photostrictive material films 3 and 6 are formed, and the sintering may be performed in advance.
【００２７】その後、図１（ｈ）に示すように、各電極
パターン２１，２２及び電極パターン５１，５２からそ
れぞれ４本のリード線を取り出し、このリード線を介し
て光歪材膜３，６に異なる極性の直流高電圧を印加し、
これら光歪材膜３，６を互いに異なる方向に分極させる
分極処理を行う。このように、絶縁膜４を中間に介在さ
せているがゆえ、焼結処理を行った後、第一・第二の光
歪材膜３，６に対して同時に且つ各層独立して分極処理
を行うことが可能となる。Thereafter, as shown in FIG. 1H, four lead wires are taken out from each of the electrode patterns 21 and 22 and the electrode patterns 51 and 52, and the photostrictive material films 3 and 6 are inserted through the lead wires. DC high voltage of different polarity is applied to
A polarization process is performed to polarize the photostrictive material films 3 and 6 in different directions. In this way, since the insulating film 4 is interposed in the middle, after the sintering process, the polarization process is performed on the first and second photostrictive material films 3 and 6 simultaneously and independently of each layer. It becomes possible to do.
【００２８】最後に、図１（ｉ）に示すように、電極パ
ターン２１と５１及び電極パターン２２と５２をそれぞ
れ短絡接続すると共に、基板１をエッチングなどにより
除去することにより、光歪バイモルフが完成するもので
ある。前記の短絡接続により、いずれかの光歪材膜に光
照射を行うことにより発生した電圧を他方の光歪材膜へ
印加させることができ、従って当該積層体が湾曲動作を
行い得るようにすることができる。Finally, as shown in FIG. 1 (i), the electrode patterns 21 and 51 and the electrode patterns 22 and 52 are short-circuited and connected, respectively, and the substrate 1 is removed by etching or the like to complete the optical strain bimorph. To do. By the short-circuit connection, the voltage generated by irradiating one of the photostrictive material films with light can be applied to the other photostrictive material film, so that the laminate can perform the bending operation. be able to.
【００２９】このようにして製作された光歪バイモルフ
は、光を照射することにより当該部材を湾曲させること
ができるという特性を利用し、例えば前述のマイクロマ
シンのアクチュエータ用部材として、或いはイメージガ
イドスコープの対物部首振り動作用部材、若しくは二つ
の光歪バイモルフを並置してピンセット状の動作を行わ
せるマイクログリッパ用部材などとして好適に用いるこ
とができる。The photostrictive bimorph manufactured in this manner utilizes the characteristic that the member can be bent by irradiating light, and is used as a member for an actuator of the above-mentioned micromachine or in an image guide scope, for example. It can be suitably used as a member for swinging the objective part, or as a member for a microgripper that arranges two optical strain bimorphs side by side to perform a tweezers-like operation.
【００３０】[0030]
【発明の効果】以上説明した通りの本発明の本発明の光
歪バイモルフの製造方法によれば、成膜手段を用いるの
で極めて薄い光歪材層を形成することができ、また順次
膜を形成できるので従来のような貼り合わせ工程を不要
とすることができる。また中間に絶縁膜を介在させるこ
とにより、成膜による積層体形成後に、すなわち各光歪
材層が十分な密着性を保った状態で各々の光歪材膜に対
してそれぞれ分極処理を行うことが可能となる。As described above, according to the method for producing a photostrictive bimorph of the present invention of the present invention, since a film forming means is used, an extremely thin photostrictive material layer can be formed and successive films are formed. Since it is possible to do so, it is possible to eliminate the conventional bonding step. In addition, by interposing an insulating film in the middle, polarization treatment is performed on each photostrictive material film after the laminated body is formed by film formation, that is, in the state where each photostrictive material layer maintains sufficient adhesion. Is possible.
【００３１】従って光歪材層の薄型化が容易に図れると
共に、分極処理の作業性を飛躍的に向上させることがで
きる。また、分極処理後に積層体を分割する等の手段で
容易に小型の光歪バイモルフを大量生産的に得ることが
でき、さらに光歪材膜の成膜にあたり適宜なパターニン
グを施すことにより、様々な形状の光歪バイモルフを簡
単に得ることができる等、本発明は優れた効果を奏す
る。Therefore, it is possible to easily reduce the thickness of the photostrictive material layer, and it is possible to dramatically improve the workability of the polarization treatment. In addition, a small photostrictive bimorph can be easily obtained in large quantities by means such as dividing the laminated body after the polarization treatment, and further various patterns can be obtained by appropriately patterning the photostrictive material film. The present invention has excellent effects such as the ability to easily obtain a shaped optical strain bimorph.
【図１】本発明の光歪バイモルフの製造方法の一例を、
工程順に示したプロセス説明図である。FIG. 1 shows an example of a method for producing a photostrictive bimorph of the present invention,
It is a process explanatory view shown in order of a process.
１ 基板 ２１，２２ 第一の電極パターン ３ 第一の光歪材膜 ４ 絶縁膜 ５１，５２ 第二の電極パターン ６ 第二の光歪材膜 1 Substrate 21,22 First Electrode Pattern 3 First Photostrictive Material Film 4 Insulating Film 51,52 Second Electrode Pattern 6 Second Photostrictive Material Film
Claims (7)
を成膜手段で形成する工程、及び前記光歪材膜に夫々極
性の異なる電圧を印加して互いに異なる方向に分極させ
る工程とを含むことを特徴とする光歪バイモルフの製造
方法。1. A step of forming a laminated body having a photostrictive material film on both surfaces of an insulating film by a film forming means, and a step of applying voltages having different polarities to the photostrictive material film to polarize in different directions. A method for producing a photostrictive bimorph, which comprises:
特徴とする請求項１記載の光歪バイモルフの製造方法。2. The method for producing a photostrictive bimorph according to claim 1, further comprising a substrate supporting the laminate.
する工程を含むことを特徴とする請求項１記載の光歪バ
イモルフの製造方法。3. The method for producing a photostrictive bimorph according to claim 1, further comprising a step of sintering the photostrictive material film after forming the photostrictive material film.
する工程を含むことを特徴とする請求項１記載の光歪バ
イモルフの製造方法。4. The method for producing a photostrictive bimorph according to claim 1, further comprising a step of sintering the photostrictive material film during the formation of the photostrictive material film.
し、該電極を介して電圧を印加することを特徴とする請
求項１記載の光歪バイモルフの製造方法。5. The method for producing a photostrictive bimorph according to claim 1, wherein a pair of electrodes are attached to the photostrictive material film, and a voltage is applied through the electrodes.
に互いに離間した第一の電極パターンを形成する工程、
その上に光歪材組成物からなる第一の光歪材膜を前記電
極パターンの夫々に接するように成膜する工程、前記第
一の電極パターン及び光歪材膜上に絶縁膜を被着する工
程、前記絶縁膜上に互いに離間した第二の電極パターン
を形成する工程、その上に光歪材組成物からなる第二の
光歪材膜を前記電極パターンの夫々に接するように成膜
する工程、これらの工程中若しくはこれらの工程後に行
う前記光歪材膜の焼結工程、前記第一及び第二の電極パ
ターンに夫々極性の異なる電圧を印加して前記第一及び
第二の光歪材膜を異なる方向に分極させる工程、及び前
記第一及び第二の電極パターンを導通させる工程とを含
むことを特徴とする光歪バイモルフの製造方法。6. A step of forming first electrode patterns separated from each other on a substrate having an insulating layer on at least the surface thereof,
A step of forming a first photostrictive material film made of a photostrictive material composition thereon so as to be in contact with each of the electrode patterns, and depositing an insulating film on the first electrode pattern and the photostrictive material film. And a step of forming second electrode patterns spaced apart from each other on the insulating film, and forming a second photostrictive material film made of a photostrictive material composition thereon so as to be in contact with each of the electrode patterns. Step, sintering step of the photostrictive material film performed during these steps or after these steps, by applying voltages having different polarities to the first and second electrode patterns, respectively. A method of manufacturing a photostrictive bimorph, comprising: a step of polarizing the strain material film in different directions; and a step of electrically connecting the first and second electrode patterns.
方向に分極させる工程の以降に、基板を除去する工程を
含むことを特徴とする請求項６記載の光歪バイモルフの
製造方法。7. The production of a photostrictive bimorph according to claim 6, further comprising a step of removing the substrate after the step of polarizing the first and second photostrictive material films in different directions. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14539994A JP2838363B2 (en) | 1994-06-03 | 1994-06-03 | Method for producing optical strain bimorph |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14539994A JP2838363B2 (en) | 1994-06-03 | 1994-06-03 | Method for producing optical strain bimorph |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07337052A true JPH07337052A (en) | 1995-12-22 |
| JP2838363B2 JP2838363B2 (en) | 1998-12-16 |
Family
ID=15384364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14539994A Expired - Fee Related JP2838363B2 (en) | 1994-06-03 | 1994-06-03 | Method for producing optical strain bimorph |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2838363B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007042740A (en) * | 2005-08-01 | 2007-02-15 | Hitachi Cable Ltd | Piezoelectric thin film element |
| JP2009220252A (en) * | 2008-03-18 | 2009-10-01 | Nippon Telegr & Teleph Corp <Ntt> | Mechanical element and method of controlling vibration thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2803325B2 (en) | 1990-05-11 | 1998-09-24 | オムロン株式会社 | Optical strain actuator |
-
1994
- 1994-06-03 JP JP14539994A patent/JP2838363B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007042740A (en) * | 2005-08-01 | 2007-02-15 | Hitachi Cable Ltd | Piezoelectric thin film element |
| JP2009220252A (en) * | 2008-03-18 | 2009-10-01 | Nippon Telegr & Teleph Corp <Ntt> | Mechanical element and method of controlling vibration thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2838363B2 (en) | 1998-12-16 |
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