JPH073474A - Method and apparatus for surface treatment of substrate - Google Patents
Method and apparatus for surface treatment of substrateInfo
- Publication number
- JPH073474A JPH073474A JP34771793A JP34771793A JPH073474A JP H073474 A JPH073474 A JP H073474A JP 34771793 A JP34771793 A JP 34771793A JP 34771793 A JP34771793 A JP 34771793A JP H073474 A JPH073474 A JP H073474A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- surface treatment
- treatment liquid
- treating liquid
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 115
- 238000004381 surface treatment Methods 0.000 title claims description 67
- 238000000034 method Methods 0.000 title description 13
- 239000007788 liquid Substances 0.000 claims abstract description 139
- 238000012545 processing Methods 0.000 claims description 50
- 238000012546 transfer Methods 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体基板、液晶用
ガラス基板、プリント回路基板、リードフレーム等の薄
板状基板（以下、「基板」という）の現像処理、エッチ
ング処理等の表面処理方法及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment method such as a development treatment and an etching treatment for a thin substrate (hereinafter referred to as "substrate") such as a semiconductor substrate, a liquid crystal glass substrate, a printed circuit board, a lead frame and the like. Regarding the device.
【０００２】[0002]
【従来の技術】従来、シャワーノズルにより表面処理液
を基板の表面に散布して表面処理する方法は良く知られ
ている。ところが、この方法では、表面処理液の飛沫が
多く発生し、その飛沫が付着した個所は他の個所よりも
早く表面処理が進行し、表面処理状態にむらが発生して
品質不良を来たすことがあった。2. Description of the Related Art Conventionally, a method of spraying a surface treatment liquid onto the surface of a substrate by using a shower nozzle to perform the surface treatment is well known. However, with this method, a large amount of droplets of the surface treatment liquid are generated, and the spots to which the droplets adhere are subjected to surface treatment earlier than other spots, resulting in uneven surface treatment conditions and poor quality. there were.
【０００３】そこで、例えば特公昭６２−３３７３６号
公報（発明の名称「半導体ウエーハの処理装置」）に
は、あらかじめ処理液をウエハ表面に棒状にまとまって
流下させ、ウエハ表面を処理液で瞬時に覆うようにした
棒状ノズルと、この棒状ノズルの、ウエハ進行方向の前
方位置に棒状ノズルと所定の距離をあけて、処理液を扇
状横広がりのシャワー状に噴出するシャワーノズルとを
備えた半導体ウエハの処理装置が開示されている。Therefore, for example, in Japanese Patent Publication No. 62-33736 (invention title "semiconductor wafer processing apparatus"), the processing solution is collected in a rod shape in advance and allowed to flow down, and the wafer surface is instantaneously treated with the processing solution. A semiconductor wafer including a rod-shaped nozzle that is covered and a shower nozzle that ejects the processing liquid in a fan-shaped laterally-spreading shower shape at a position in front of the rod-shaped nozzle in the wafer advancing direction with a predetermined distance from the rod-shaped nozzle. Is disclosed.
【０００４】この装置は、図３にその側面概要図を示す
ように、ウエハ１を水平搬送するベルトコンベア７の上
方に、第１ノズル４、第２ノズル５、及び、その第２ノ
ズル５と距離Ｄだけ離された第３ノズル５’をそれぞれ
吊設して構成されている。この装置において、第１ノズ
ル４は、棒状に流下させるに十分な量の処理液３をウエ
ハ１の表面に供給し、第２ノズル５は、シャワー状に処
理液６をウエハ１の表面に供給して、ウエハ表面に処理
液の液層２を全面に均一に形成するようにする。そし
て、距離Ｄの間をウエハ１が水平搬送され、その搬送中
に、ウエハ１の表面の液層２内において次第にウエハ１
の表面処理が進行し、第３ノズル５’によりシャワー状
に処理液６’を供給して処理を完了する。As shown in a schematic side view of FIG. 3, this apparatus has a first nozzle 4, a second nozzle 5, and a second nozzle 5 above a belt conveyor 7 which horizontally conveys the wafer 1. It is configured by suspending third nozzles 5 ′ separated by a distance D. In this apparatus, the first nozzle 4 supplies a sufficient amount of the processing liquid 3 to the surface of the wafer 1 to make it flow down in a rod shape, and the second nozzle 5 supplies the processing liquid 6 to the surface of the wafer 1 in a shower shape. Then, the liquid layer 2 of the processing liquid is uniformly formed on the entire surface of the wafer. Then, the wafer 1 is horizontally transferred between the distances D, and during the transfer, the wafer 1 is gradually transferred in the liquid layer 2 on the surface of the wafer 1.
The surface treatment proceeds, and the treatment liquid 6 ′ is supplied in a shower shape by the third nozzle 5 ′ to complete the treatment.
【０００５】[0005]
【発明が解決しようとする課題】上記した特公昭６２−
３３７３６号公報に記載されたウエハ処理装置において
は、水平搬送されるウエハ１の上方に配置された第１ノ
ズル４から棒状に流下させられる処理液３によってウエ
ハ表面への処理液の供給が行なわれる。このため、棒状
にウエハ１表面上へ流下した処理液３がウエハ表面で跳
ね返り、処理液の一部が周囲へ飛散するといったことが
起こる。この結果、ウエハの表面処理に要する処理液量
よりも多くの量の処理液をウエハ表面へ供給する必要が
あり、ウエハ１枚当りの処理液供給量が多くなる、とい
った問題点がある。また、同号公報に記載された装置で
は、第１ノズル４からウエハ１表面上へ棒状に流下した
処理液３の飛散が生じるので、ウエハの表面全体に処理
液を均一に供給することが困難であることから、ウエハ
表面における処理むらを生じる可能性がある。このた
め、図３に示したように第１ノズル４の後段に処理液６
をシャワー状に供給する第２ノズル５を設け、この第２
ノズル５からウエハ１表面へさらに処理液６を供給し、
これによって処理むらの発生を抑えるようにしている。
この結果、ウエハ１枚当りの処理液供給量がさらに多く
なってしまう、といった問題点がある。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
In the wafer processing apparatus disclosed in Japanese Patent No. 33736, the processing liquid is supplied to the surface of the wafer by the processing liquid 3 which is made to flow down in a rod shape from the first nozzle 4 arranged above the wafer 1 which is horizontally transported. . As a result, the processing liquid 3 that has flowed down like a rod onto the surface of the wafer 1 bounces off on the surface of the wafer, and a part of the processing liquid may be scattered around. As a result, there is a problem in that it is necessary to supply a larger amount of the processing liquid to the surface of the wafer than the amount of the processing liquid required for the surface treatment of the wafer, and the processing liquid supply amount per wafer increases. Further, in the apparatus described in the same publication, since the processing liquid 3 that has flowed down like a rod from the first nozzle 4 onto the surface of the wafer 1 is scattered, it is difficult to uniformly supply the processing liquid to the entire surface of the wafer. Therefore, there is a possibility that processing unevenness may occur on the wafer surface. Therefore, as shown in FIG. 3, the treatment liquid 6 is provided after the first nozzle 4.
Is provided with a second nozzle 5 for supplying the
The processing liquid 6 is further supplied from the nozzle 5 to the surface of the wafer 1,
As a result, uneven processing is suppressed.
As a result, there is a problem in that the processing liquid supply amount per wafer is further increased.
【０００６】この発明は、上記した従来装置における問
題点を解消しようとしてなされたものであり、基板表面
への表面処理液の供給量を増大させることなく、基板の
表面全体に均一に表面処理液を供給して、基板表面にお
ける処理むらの発生を防止することができる基板の表面
処理方法及び装置を提供することを目的とする。The present invention has been made in order to solve the above-mentioned problems in the conventional apparatus, and the surface treatment liquid is uniformly applied to the entire surface of the substrate without increasing the supply amount of the surface treatment liquid to the surface of the substrate. It is an object of the present invention to provide a substrate surface treatment method and apparatus capable of preventing the occurrence of treatment unevenness on the substrate surface.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、第１の発明に係る方法は、水平姿勢に保持された基
板と、この基板の表面に表面処理液をカーテン状に供給
する処理液供給手段とを、水平方向にかつ基板の幅方向
と直交する方向に相対的に移動させて、基板の表面全体
に表面処理液を供給することを特徴とする。In order to achieve the above object, the method according to the first aspect of the present invention is directed to a substrate held in a horizontal position, and a treatment for supplying a surface treatment liquid to the surface of the substrate in a curtain shape. The liquid supply means is relatively moved in the horizontal direction and in the direction orthogonal to the width direction of the substrate to supply the surface treatment liquid to the entire surface of the substrate.
【０００８】また、第２の発明は、基板を水平姿勢に保
持する基板保持手段と、基板の表面に表面処理液をカー
テン状に供給する処理液供給手段と、前記基板保持手段
に保持された基板と前記処理液供給手段とを水平方向に
かつ基板の幅方向と直交する方向に相対的に移動させ
て、基板の表面全体に表面処理液を供給するための水平
移動手段とを備えて基板表面処理装置を構成し、前記処
理液供給手段が、その下端に基板の幅寸法に相当する長
さのスリット状吐出口を有し、その吐出口が基板の表面
に近接して基板表面と対向するようにかつ基板の幅方向
に延びるように配置されるようにしたことを特徴とす
る。この場合、前記処理液供給手段が、スリット状吐出
口に連通し、処理液供給源から供給される表面処理液を
一旦貯留して前記スリット状吐出口へ送給する液流路を
内部に有するように構成することができる。According to a second aspect of the present invention, the substrate holding means holds the substrate in a horizontal position, the treatment liquid supply means supplies the surface treatment liquid to the surface of the substrate in a curtain shape, and the substrate holding means holds the substrate. The substrate and the processing liquid supply means are horizontally moved relative to each other in a direction orthogonal to the width direction of the substrate, and horizontal movement means for supplying the surface processing liquid to the entire surface of the substrate is provided. In the surface treatment apparatus, the treatment liquid supply means has a slit-shaped ejection port at the lower end thereof having a length corresponding to the width dimension of the substrate, and the ejection port is close to the surface of the substrate and faces the substrate surface. And are arranged so as to extend in the width direction of the substrate. In this case, the processing liquid supply means has therein a liquid flow path that communicates with the slit-shaped discharge port and temporarily stores the surface processing liquid supplied from the processing liquid supply source and supplies the surface processing liquid to the slit-shaped discharge port. Can be configured as.
【０００９】[0009]
【作用】上記構成の第１の発明に係る基板表面処理方法
によれば、水平姿勢に保持された基板が処理液供給手段
に対して水平方向に相対的に移動することにより、処理
液供給手段から基板の表面全体に表面処理液がカーテン
状に供給される。According to the substrate surface treatment method of the first aspect of the present invention, the substrate held in a horizontal position moves in the horizontal direction relative to the treatment liquid supply means, whereby the treatment liquid supply means is provided. From the above, the surface treatment liquid is supplied in a curtain shape over the entire surface of the substrate.
【００１０】また、第２の発明に係る装置を使用して基
板の表面処理を行なうようした場合は、基板保持手段に
よって水平姿勢に保持された基板が、水平移動手段によ
り、処理液供給手段に対して水平方向に相対的に移動さ
せられ、これに伴い、処理液供給手段の下端のスリット
状吐出口から基板の表面に表面処理液が供給される。こ
のとき、処理液供給手段のスリット状吐出口は、基板の
表面に近接して基板表面と対向しており、また、基板の
幅方向に相当する長さを有していて、基板の幅方向に延
びるように配置されているので、表面処理液は、基板の
表面全体にカーテン状に供給されることになる。そし
て、処理液供給手段が、処理液供給源から供給される表
面処理液を一旦貯留してスリット状吐出口へ送給する液
流路を内部に有するようにしたときは、処理液供給源か
ら供給される表面処理液の圧力の大小による不均一な吐
出状態、すなわち供給源に近い位置ほど多くの表面処理
液が吐出され、供給源から遠い位置になるほど表面処理
液の吐出量が少なくなるといったことが無くなり、スリ
ット状吐出口全体から均一に表面処理液が吐出される。Further, when the surface treatment of the substrate is performed by using the apparatus according to the second aspect of the invention, the substrate held in the horizontal posture by the substrate holding means becomes the processing liquid supply means by the horizontal moving means. The surface treatment liquid is supplied to the surface of the substrate from the slit-shaped discharge port at the lower end of the treatment liquid supply means. At this time, the slit-shaped discharge port of the processing liquid supply means is close to the surface of the substrate and faces the surface of the substrate, and has a length corresponding to the width direction of the substrate. Since the surface treatment liquid is arranged so as to extend in a vertical direction, the surface treatment liquid is supplied in a curtain shape over the entire surface of the substrate. Then, when the processing liquid supply means has a liquid flow path inside which temporarily stores the surface processing liquid supplied from the processing liquid supply source and supplies it to the slit-shaped ejection port, An uneven discharge state due to the pressure of the supplied surface treatment liquid, that is, more surface treatment liquid is discharged at a position closer to the supply source, and discharge amount of the surface treatment liquid becomes smaller at a position farther from the supply source. And the surface treatment liquid is uniformly discharged from the entire slit-shaped discharge port.
【００１１】従って、第１の発明に係る方法によれば、
また、第２の発明に係る装置を使用すれば、表面処理液
は、カーテン状に基板の表面に供給されるので、処理液
の飛散などを生じることがなく、基板の表面全体に表面
処理液が均一に供給される。Therefore, according to the method of the first invention,
When the apparatus according to the second invention is used, the surface treatment liquid is supplied to the surface of the substrate in a curtain shape, so that the treatment liquid is not scattered and the surface treatment liquid is applied to the entire surface of the substrate. Is uniformly supplied.
【００１２】[0012]
【実施例】以下、この発明の好適な実施例について図面
を参照しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings.
【００１３】図１は、この発明に係る方法を実施するた
めの基板の表面処理装置の概略構成を示す側断面図であ
る。FIG. 1 is a side sectional view showing a schematic structure of a substrate surface treatment apparatus for carrying out the method according to the present invention.
【００１４】図１に示した装置において、基板Ｗを水平
方向に搬送する搬送ローラＲ1が複数個、それぞれ回転
自在に軸支されて列設されている。その搬送ローラＲ1
の上方には、水平搬送される基板Ｗの表面にカーテン状
に表面処理液を供給して、基板Ｗの表面上に液層10を形
成するための処理液供給手段12、及び、基板Ｗの有無を
検知する検知センサーＳ1が、それぞれ吊設されてい
る。In the apparatus shown in FIG. 1, a plurality of transport rollers R 1 for transporting the substrate W in the horizontal direction are rotatably supported and arranged in a row. The transport roller R 1
Above the substrate, a treatment liquid supply means 12 for supplying the surface treatment liquid in a curtain shape to the surface of the substrate W which is horizontally conveyed to form the liquid layer 10 on the surface of the substrate W, and the substrate W. Detection sensors S 1 for detecting the presence or absence are respectively hung.
【００１５】処理液供給手段12には、ポンプＰを介挿し
て表面処理液受槽Ｔ1が流路接続しており、表面処理液
受槽Ｔ1内の表面処理液をポンプＰによって処理液供給
手段12へ送液するようになっている。図２に、処理液供
給手段12の１例を示す。この処理液供給手段12は、処理
しようとする基板Ｗの幅に対応した長さのスリット状の
吐出口14を下端面に有し、内部に、その吐出口14に連通
する液流路16が形設され、その液流路16に連通路18を介
して送液用配管20が接続されて構成されている。処理液
供給手段12内部の液流路16は、スリット状吐出口14と同
一方向に延びるように形成されており、送液用配管20か
ら連通路18を通って液流路16内に流入した表面処理液
は、この液流路16内で一旦貯留されてからスリット状吐
出口14へ送給されるので、処理液供給源から供給される
表面処理液の圧力の大小により供給源に近い位置ほど多
くの表面処理液が吐出され、供給源から遠い位置になる
ほど表面処理液の吐出量が少なくなるといったような不
均一な吐出状態が無くなり、スリット状吐出口14全体か
ら均一に表面処理液が吐出されるようになっている。[0015] processing liquid supply unit 12 is a surface treatment solution receiving tank T 1 by inserting the pump P is the channel connection, the surface treatment liquid receiving tank T 1 in surface-treatment liquid treatment liquid supply means by a pump P It is designed to deliver to 12. FIG. 2 shows an example of the processing liquid supply means 12. The processing liquid supply means 12 has a slit-shaped discharge port 14 having a length corresponding to the width of the substrate W to be processed on the lower end surface, and a liquid flow path 16 communicating with the discharge port 14 is provided inside. A liquid delivery pipe 20 is connected to the liquid passage 16 via a communication passage 18 in a shape. The liquid flow path 16 inside the processing liquid supply means 12 is formed so as to extend in the same direction as the slit-shaped discharge port 14, and flows into the liquid flow path 16 from the liquid sending pipe 20 through the communication passage 18. The surface treatment liquid is temporarily stored in the liquid flow path 16 and then fed to the slit-shaped discharge port 14, so that the surface treatment liquid is supplied from the treatment liquid supply source at a position closer to the supply source depending on the magnitude of the pressure of the surface treatment liquid. A large amount of the surface treatment liquid is discharged, and a non-uniform discharge state such that the discharge amount of the surface treatment liquid decreases as the position is farther from the supply source is eliminated, and the surface treatment liquid is uniformly discharged from the entire slit-shaped discharge port 14. It is designed to be discharged.
【００１６】複数個の搬送ローラＲ1に続いて、一定距
離Ｄ1間に、正・逆回転可能な移送ローラＲ2が列設され
ており、その最前部及び最後尾のそれぞれの上方に一対
のセンサーＳ2、Ｓ3が吊設されている。さらに、複数個
の移送ローラＲ2に続いて、搬送ローラＲ3が配設され、
最後尾の移送ローラＲ2と搬送ローラＲ3との間にエアー
ナイフ22、22’が少なくとも一対配設されている。そし
て、これら搬送ローラＲ1、移送ローラＲ2、エアーナイ
フ22、22’及び搬送ローラＲ3が処理槽Ｔ2内に配置され
ており、その処理槽Ｔ2は、ドレン管を介して表面処理
液受槽Ｔ1に接続していて、受槽Ｔ1内の処理液は、処理
液供給手段12及び処理槽Ｔ2を介して循環使用できるよ
うになっている。A plurality of transport rollers R 1 are provided, and a transfer roller R 2 capable of forward and reverse rotation is provided in a row at a constant distance D 1 , and a pair of transfer rollers R 2 are provided above each of the foremost part and the rearmost part. The sensors S 2 and S 3 are suspended. Further, a transport roller R 3 is disposed following the plurality of transport rollers R 2 ,
Air knife 22, 22 'are at least a pair disposed between the transfer roller R 2 and the conveying roller R 3 of the last. And these conveying rollers R 1, the transfer roller R 2, air knife 22, 22 'and the conveying roller R 3 are arranged in the processing bath T 2, the process tank T 2 are, surface treatment through the drain pipe It is connected to the liquid receiving tank T 1 so that the processing liquid in the receiving tank T 1 can be circulated through the processing liquid supply means 12 and the processing tank T 2 .
【００１７】また、処理槽Ｔ2に続いて、洗浄槽Ｔ3が配
設されており、その洗浄槽Ｔ3の上方には、洗浄液吐出
ノズル24が配設されていて、処理槽Ｔ2での表面処理を
終えた基板Ｗは、搬送ローラＲ4に移載されて洗浄槽Ｔ3
内を搬送される間に洗浄される。尚、図示してしない
が、洗浄槽Ｔ3に続いて、乾燥槽及び基板収納手段が連
設されている。[0017] Following the processing tank T 2, which is the cleaning tank T 3 is disposed, above the cleaning tank T 3, the cleaning liquid discharge nozzle 24 have been arranged, in a processing tank T 2 The substrate W which has been subjected to the surface treatment is transferred to the transport roller R 4 and washed in the cleaning tank T 3
It is washed while being transported inside. Although not shown in the drawing, a drying tank and a substrate accommodating means are continuously provided following the cleaning tank T 3 .
【００１８】搬送ローラＲ1、Ｒ3、Ｒ4及び移送ローラ
Ｒ2は、いずれも基板Ｗの両側端部にのみ当接し、基板
Ｗ下面の有効部と当接しない構造である方が、基板Ｗ裏
面の有効部に塵埃を付着させないので好ましい。尚、基
板の裏面にローラ等が接触してもよい場合には、ローラ
に代えて搬送ベルトを使用するようにしてもよい。The transport rollers R 1 , R 3 , R 4 and the transfer roller R 2 are in contact with only the both side edges of the substrate W and are not in contact with the effective portion of the lower surface of the substrate W. It is preferable because dust is not attached to the effective portion on the back surface of W. If a roller or the like may contact the back surface of the substrate, a conveyor belt may be used instead of the roller.
【００１９】上記構成の装置における動作は、次の通り
である。The operation of the apparatus having the above structure is as follows.
【００２０】まず、図示していない基板供給手段（ロー
ダー）により基板Ｗが１枚ずつ、この装置へ供給され、
搬送ローラＲ1に載置されて搬送される。そして、基板
Ｗが検知センサーＳ1の直下位置に水平搬送されてきた
時に、検知センサーＳ1からの出力信号によりポンプＰ
が作動して、表面処理液受槽Ｔ1内の処理液が処理液供
給手段12へ送られ、その処理液供給手段12のスリット状
吐出口14から処理液がカーテン状に基板Ｗの表面へ供給
される。この際、基板Ｗは、搬送ローラＲ1により所要
の高速度、例えば８ｍ／分の速度で水平搬送され、表面
処理液は、基板Ｗの表面上に速やかに液層10を形成す
る。そして、基板Ｗが処理液供給手段12の下方を通過し
てから所定時間経過後、ポンプＰが停止する。また、基
板Ｗからオーバーフローした表面処理液は、処理槽Ｔ2
のドレン管を通って受槽Ｔ1へ戻される。First, the substrate W is supplied to the apparatus one by one by a substrate supply means (loader) not shown,
The sheet is placed on the conveying roller R 1 and conveyed. When the substrate W has been horizontally conveyed to a position directly below the detection sensor S 1, the pump P by the output signal from the detection sensor S 1
Is activated, the treatment liquid in the surface treatment liquid receiving tank T 1 is sent to the treatment liquid supply means 12, and the treatment liquid is supplied to the surface of the substrate W in a curtain shape from the slit-shaped discharge ports 14 of the treatment liquid supply means 12. To be done. At this time, the substrate W is horizontally transported by the transport roller R 1 at a required high speed, for example, 8 m / min, and the surface treatment liquid quickly forms the liquid layer 10 on the surface of the substrate W. Then, the pump P is stopped after a predetermined time has passed since the substrate W passed below the processing liquid supply means 12. Further, the surface treatment liquid overflowing from the substrate W is treated by the treatment bath T 2
It is returned to the receiving tank T 1 through the drain pipe of.
【００２１】次に、基板ＷがセンサーＳ2の直下位置を
通過すると、基板Ｗは移送ローラＲ2に移載され、搬送
ローラＲ1に比べて低速度、例えば３ｍ／分の速度で水
平移送される。ここで、搬送ローラＲ1と移送ローラＲ2
との各搬送速度が違っているため、移送ローラＲ2のう
ちのセンサーＳ2に近い側の複数個のローラを回転自在
のフリーローラとして、基板Ｗの搬送速度の変化に対
し、基板Ｗとローラ間のスリップを防ぐようにしてい
る。尚、基板ＷがセンサーＳ2の位置を通過した後、移
送ローラＲ2の速度を高速から低速に切り換えるように
してもよい。Next, when the substrate W passes directly below the sensor S 2 , the substrate W is transferred to the transfer roller R 2 and horizontally transferred at a speed lower than that of the transfer roller R 1 , for example, 3 m / min. To be done. Here, the transport roller R 1 and the transfer roller R 2
Since the respective transfer speeds of the substrate W and the transfer roller R 2 are different from each other, a plurality of rollers of the transfer roller R 2 on the side close to the sensor S 2 are used as free rollers which are rotatable, and the transfer speed of the substrate W is different from that of the substrate W. It is designed to prevent slipping between rollers. The speed of the transfer roller R 2 may be switched from high speed to low speed after the substrate W has passed the position of the sensor S 2 .
【００２２】そして、基板Ｗが距離Ｄ1だけ移送されて
センサーＳ3の直下位置まで到達すると、そのセンサー
Ｓ3からからの出力信号により移送ローラＲ2が逆回転さ
せられ、基板Ｗは移送方向を反転する。この時、基板Ｗ
に形成された液層10の慣性力によって表面処理液の撹拌
作用が起こり、基板Ｗの表面に接触する表面処理液の更
新が行なわれる。次いで、基板Ｗが距離Ｄ1だけセンサ
ーＳ2の方向へ移送され、センサーＳ2の直下位置まで到
達すると、そのセンサーＳ2からの出力信号により移送
ローラＲ2が元のように正回転させられ、基板Ｗは再び
移送方向を反転し、この時に、基板Ｗ上の液層10の表面
処理液は再び撹拌作用を受ける。このようにして、基板
Ｗが移送ローラＲ2によって所定距離Ｄ1間を往復移送さ
れる間に、基板Ｗは、水平移動中は表面処理液の液層10
によって静止型浸漬処理を受け、方向転換する瞬間、液
層10の慣性力と基板Ｗの逆方向への動きとの相対的作用
によって液層10に撹拌作用が生じることにより、表面処
理が速やかに行なわれる。尚、この方法によると、基板
表面に形成された液層分のみで基板の表面処理が行なわ
れることから、処理液量が必要最少限でよく、高価な表
面処理液を節約することができる。When the substrate W is transported by the distance D 1 and reaches the position directly below the sensor S 3 , the transport roller R 2 is reversely rotated by the output signal from the sensor S 3 , and the substrate W is transported in the transport direction. Invert. At this time, the substrate W
The inertial force of the liquid layer 10 formed on the surface causes a stirring action of the surface treatment liquid, so that the surface treatment liquid contacting the surface of the substrate W is renewed. Then, the substrate W is the transport direction of the distance D 1 by the sensor S 2, and reaches up to just below the position of the sensor S 2, the output signal from the sensor S 2 is feed roller R 2 is rotated forward as the original The substrate W reverses the transfer direction again, and at this time, the surface treatment liquid of the liquid layer 10 on the substrate W is again subjected to the stirring action. In this way, while the substrate W is reciprocally transferred by the transfer roller R 2 for a predetermined distance D 1 , the substrate W is in a liquid layer 10 of the surface treatment liquid during horizontal movement.
At the moment of changing direction after undergoing the static immersion treatment, the relative action of the inertial force of the liquid layer 10 and the movement of the substrate W in the opposite direction causes a stirring action on the liquid layer 10 to promptly perform the surface treatment. Done. According to this method, since the surface treatment of the substrate is performed only with the liquid layer formed on the surface of the substrate, the amount of the treatment liquid can be minimized and the expensive surface treatment liquid can be saved.
【００２３】基板Ｗが所定時間内、往復水平移動しなが
ら表面処理されて、基板Ｗの表面処理が終了すると、基
板ＷはセンサーＳ3の下方を通過し、一対のエアーナイ
フ22、22’間を通り、その間に、液層10を形成していた
表面処理液はエアーの力で吹き飛ばされ、基板Ｗの表面
から液切りされる。When the substrate W is surface-treated while reciprocally moving horizontally within a predetermined time, and the surface treatment of the substrate W is completed, the substrate W passes below the sensor S 3 , and a space between the pair of air knives 22, 22 'is reached. The surface treatment liquid that has formed the liquid layer 10 is blown away by the force of air and is drained from the surface of the substrate W in the meantime.
【００２４】続いて、洗浄槽Ｔ3において、基板Ｗは、
洗浄液吐出ノズル24等により洗浄液を供給され、洗浄さ
れた後、図示していない乾燥手段により乾燥させられ、
基板収納器に収納される。Subsequently, in the cleaning tank T 3 , the substrate W is
A cleaning liquid is supplied from the cleaning liquid discharge nozzle 24 and the like, and after cleaning, it is dried by a drying means not shown,
It is stored in the substrate container.
【００２５】[0025]
【発明の効果】第１の発明及び第２の発明は、それぞれ
以上説明したように構成されかつ作用するので、第１の
発明に係る基板表面処理方法によれば、また、第２の発
明に係る装置を使用して基板の表面処理を行なうように
すれば、基板表面での表面処理液の飛散が防止され、基
板の表面全体に表面処理液が均一に供給されるため、基
板１枚当りの表面処理液の供給量を増大させることな
く、基板表面における処理むらの発生を防止することが
できる。Since the first invention and the second invention are constructed and operate as described above, respectively, the substrate surface treatment method according to the first invention provides a second invention. If the surface treatment of the substrate is performed using such a device, the surface treatment liquid is prevented from scattering on the surface of the substrate, and the surface treatment liquid is uniformly supplied to the entire surface of the substrate. It is possible to prevent the occurrence of processing unevenness on the substrate surface without increasing the supply amount of the surface processing liquid.
【図１】この発明に係る基板の表面処理方法を実施する
ための装置の構成の１例を示す概略側断面図である。FIG. 1 is a schematic side sectional view showing an example of a configuration of an apparatus for carrying out a substrate surface treatment method according to the present invention.
【図２】図１に示した装置において使用される処理液供
給手段の構成の１例を示す一部破断斜視図である。FIG. 2 is a partially cutaway perspective view showing an example of the configuration of a processing liquid supply means used in the apparatus shown in FIG.
【図３】従来の基板表面処理装置の構成の１例を示す概
略側面図である。FIG. 3 is a schematic side view showing an example of the configuration of a conventional substrate surface treatment apparatus.
10 表面処理液の液層 12 処理液供給手段 14 スリット状吐出口 16 液流路 20 送液用配管 Ｗ 基板 Ｒ1 搬送ローラ Ｒ2 移送ローラ Ｔ1 表面処理液受槽 Ｔ2 処理槽 Ｐ ポンプ10 Liquid layer of surface treatment liquid 12 Treatment liquid supply means 14 Slit discharge port 16 Liquid flow passage 20 Liquid supply pipe W Substrate R 1 Transport roller R 2 Transfer roller T 1 Surface treatment liquid receiving tank T 2 Processing tank P Pump
───────────────────────────────────────────────────── フロントページの続き (72)発明者 清水 憲一 滋賀県彦根市高宮町480番地の１ 大日本 スクリーン製造株式会社彦根地区事業所内 (72)発明者 嶋治 克己 滋賀県彦根市高宮町480番地の１ 大日本 スクリーン製造株式会社彦根地区事業所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kenichi Shimizu 1 480 Takamiya-cho, Hikone-shi, Shiga Dai Nippon Screen Mfg. Co., Ltd., Hikone District Office (72) Inventor Katsumi Shimaji 480 Takamiya-cho, Hikone-shi, Shiga 1 Dainippon Screen Mfg. Co., Ltd. Hikone District Office
Claims (3)
の表面に表面処理液をカーテン状に供給する処理液供給
手段とを、水平方向にかつ基板の幅方向と直交する方向
に相対的に移動させて、基板の表面全体に表面処理液を
供給することを特徴とする基板の表面処理方法。1. A substrate held horizontally and a treatment liquid supply means for supplying a surface treatment liquid to the surface of the substrate in a curtain shape are relatively arranged in a horizontal direction and in a direction orthogonal to a width direction of the substrate. And a surface treatment liquid is supplied to the entire surface of the substrate.
と、 基板の幅寸法に相当する長さのスリット状吐出口を下端
に有し、その吐出口が基板の表面に近接して基板表面と
対向するようにかつ基板の幅方向に延びるように配置さ
れ、基板の表面に表面処理液をカーテン状に供給する処
理液供給手段と、 前記基板保持手段に保持された基板と前記処理液供給手
段とを水平方向にかつ基板の幅方向と直交する方向に相
対的に移動させて、基板の表面全体に表面処理液を供給
するための水平移動手段と、 を備えたことを特徴とする基板の表面処理装置。2. A substrate holding means for holding the substrate in a horizontal position, and a slit-like ejection port having a length corresponding to the width dimension of the substrate at the lower end, the ejection port being close to the surface of the substrate. A treatment liquid supply unit that is disposed so as to face the substrate and extends in the width direction of the substrate and that supplies the surface treatment liquid to the surface of the substrate in a curtain shape; and the substrate held by the substrate holding unit and the treatment liquid supply. And a horizontal moving means for relatively moving the means in a direction orthogonal to the width direction of the substrate to supply the surface treatment liquid to the entire surface of the substrate. Surface treatment equipment.
連通し、処理液供給源から供給される表面処理液を一旦
貯留して前記スリット状吐出口へ送給する液流路を内部
に有する請求項２記載の基板の表面処理装置。3. A processing liquid supply means communicates with the slit-shaped discharge port, and internally stores a liquid flow path for temporarily storing the surface processing liquid supplied from the processing liquid supply source and supplying it to the slit-shaped discharge port. The surface treatment apparatus for a substrate according to claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34771793A JPH073474A (en) | 1987-10-31 | 1993-12-24 | Method and apparatus for surface treatment of substrate |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-276462 | 1987-10-31 | ||
| JP27646287 | 1987-10-31 | ||
| JP34771793A JPH073474A (en) | 1987-10-31 | 1993-12-24 | Method and apparatus for surface treatment of substrate |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63157404A Division JPH0649956B2 (en) | 1987-10-31 | 1988-06-25 | Substrate surface treatment method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH073474A true JPH073474A (en) | 1995-01-06 |
Family
ID=26551916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34771793A Pending JPH073474A (en) | 1987-10-31 | 1993-12-24 | Method and apparatus for surface treatment of substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH073474A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09157867A (en) * | 1995-11-30 | 1997-06-17 | Toppan Printing Co Ltd | Manufacturing method of shadow mask |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5017340A (en) * | 1973-06-20 | 1975-02-24 | ||
| JPS59126633A (en) * | 1983-01-10 | 1984-07-21 | Mitsubishi Electric Corp | Device for processing semiconductor wafer |
-
1993
- 1993-12-24 JP JP34771793A patent/JPH073474A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5017340A (en) * | 1973-06-20 | 1975-02-24 | ||
| JPS59126633A (en) * | 1983-01-10 | 1984-07-21 | Mitsubishi Electric Corp | Device for processing semiconductor wafer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09157867A (en) * | 1995-11-30 | 1997-06-17 | Toppan Printing Co Ltd | Manufacturing method of shadow mask |
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