JPH073476A - Method for regenerating copper etching liquid - Google Patents
Method for regenerating copper etching liquidInfo
- Publication number
- JPH073476A JPH073476A JP17108793A JP17108793A JPH073476A JP H073476 A JPH073476 A JP H073476A JP 17108793 A JP17108793 A JP 17108793A JP 17108793 A JP17108793 A JP 17108793A JP H073476 A JPH073476 A JP H073476A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- etching
- chloride
- cathode
- waste liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 85
- 239000010949 copper Substances 0.000 title claims abstract description 77
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000007788 liquid Substances 0.000 title claims description 51
- 230000001172 regenerating effect Effects 0.000 title description 5
- 239000002699 waste material Substances 0.000 claims abstract description 41
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims abstract description 30
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims abstract description 30
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910001431 copper ion Inorganic materials 0.000 claims abstract description 25
- 229940045803 cuprous chloride Drugs 0.000 claims abstract description 17
- 238000011069 regeneration method Methods 0.000 claims abstract description 11
- 230000008929 regeneration Effects 0.000 claims abstract description 10
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 47
- 229960003280 cupric chloride Drugs 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000000460 chlorine Substances 0.000 description 21
- 239000000243 solution Substances 0.000 description 17
- 210000004027 cell Anatomy 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- -1 chlorine ions Chemical class 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 238000006722 reduction reaction Methods 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005341 cation exchange Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920000557 Nafion® Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229940116318 copper carbonate Drugs 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 239000003014 ion exchange membrane Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、銅エッチングに使用す
る廃液の再生方法に関し、より詳細にはサブトラクト法
プリント基板のパターン形成に使用する塩化銅エッチン
グ廃液の再生方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for reclaiming a waste liquid used for copper etching, and more particularly to a method for reclaiming a copper chloride etching waste liquid used for pattern formation of a subtracted printed circuit board.
【0002】[0002]
【従来技術とその問題点】銅張積層板からエッチングに
より回路パターンを形成するいわゆるサブトラクト法は
プリント回路基板の製造に最も広く使用されている。こ
の手法は銅張積層板上にスルーホールを形成し導電メッ
キを行った後、配線パターンをレジストを使用して描
き、不要部分をエッチングで取り除くものであり、操作
性が良いこと、短時間で製造できること及び廃液処理が
比較的容易である等のメリットがある。前記エッチング
はいわゆる化学エッチングと呼ばれるもので、遷移金属
の価数変化に伴う酸化作用により銅を銅イオンとして溶
出する。2. Description of the Related Art The so-called subtract method of forming a circuit pattern from a copper clad laminate by etching is most widely used in the manufacture of printed circuit boards. This method is to form through holes on a copper clad laminate and conduct conductive plating, then draw a wiring pattern using a resist and remove unnecessary parts by etching. There are merits such as that it can be manufactured and that the waste liquid treatment is relatively easy. The etching is so-called chemical etching, in which copper is eluted as copper ions by an oxidizing action associated with a change in valence of a transition metal.
【0003】このエッチングに使用されるエッチング液
は塩化第二鉄(FeCl3)と塩化第二銅(CuCl2)の混合液で
あり、それぞれ次の化学式に従って銅を溶解する。 2 Cu + 2 FeCl3 → 2 FeCl2 + Cu2Cl2 Cu + CuCl2 → Cu2Cl2 塩化第二鉄は特別な選択性がなく極めて広い範囲で銅溶
解にして使用できるためプリント基板エッチング用とし
て広く活用されている。しかしエッチング液の保守管理
を常に行わなければならず、又過剰の塩酸によりサイド
エッチングが大きくなる等の問題点があった。更にエッ
チング液の再生の際には化学処理により銅と鉄の分離を
行う必要があり、再生が容易でないという問題点も合わ
せ持っていた。The etching solution used for this etching is a mixed solution of ferric chloride (FeCl 3 ) and cupric chloride (CuCl 2 ), each of which dissolves copper according to the following chemical formula. 2 Cu + 2 FeCl 3 → 2 FeCl 2 + Cu 2 Cl 2 Cu + CuCl 2 → Cu 2 Cl 2 Ferric chloride has no special selectivity and can be used by dissolving copper in a very wide range for use in etching printed circuit boards. Is widely used as. However, there has been a problem that the maintenance and management of the etching solution must always be performed, and the side etching becomes large due to excess hydrochloric acid. Furthermore, when the etching solution is regenerated, it is necessary to separate copper and iron by a chemical treatment, and there is also a problem that the regeneration is not easy.
【0004】一方塩化銅は半田メッキ(Pb−Sn) に対し
て僅かであるが反応するという問題点のためプリント配
線板用としては使用しにくく当初は必ずしも広く使用さ
れなかった。しかし前記半田メッキ中のスズ(Sn) をニ
ッケル(Ni) に置き換えることにより完全に前記問題点
が解決できたため、塩化銅も銅エッチング用として使用
されるようになっている。塩化第二銅(CuCl2 )はその
エッチング生成物が塩化第一銅(Cu2Cl2)であり塩化第
二鉄と異なり金属同士の分離が不要であり、前記塩化第
一銅は電解的あるいは化学的に、例えば空気のバブリン
グにより、容易に酸化されて塩化第二銅に変換されるた
め塩酸のバランスを調節するのみで液の特別な調製を必
要としないというメリットがありその活用が増大してい
る。On the other hand, copper chloride is difficult to use as a printed wiring board due to the problem that it reacts slightly to solder plating (Pb-Sn), but it was not always widely used at the beginning. However, replacing tin (Sn) in the solder plating with nickel (Ni) has completely solved the above problem, and copper chloride has also been used for copper etching. The etching product of cupric chloride (CuCl 2 ) is cuprous chloride (Cu 2 Cl 2 ), and unlike ferric chloride, there is no need to separate metals from each other. Chemically, for example, by bubbling air, it is easily oxidized and converted to cupric chloride, which has the advantage that it only adjusts the balance of hydrochloric acid and does not require special preparation of liquid, and its utilization increases. ing.
【0005】しかしエッチングによるプリント基板から
の銅の溶解によりエッチング液中の銅が過剰となりその
処理が大きな問題となっている。通常はエッチング液の
一部を取り出し、それを電解的に還元して金属銅を析出
させる。つまりCuCl2 + 2e-→ Cu + 2 Cl - の反応を
行わせ、塩酸の回収と銅を銅粉として取り除き、あるい
は化学反応により例えば炭酸塩との反応により炭酸銅を
得て回収したり、中和により酸化銅を得ること等が行わ
れていた。これらの回収操作により銅回収が容易に行わ
れかつエッチング液は安定化するが、前記回収操作の手
間が多大であり、連続的に行うことは困難であった。However, the dissolution of copper from the printed circuit board due to etching causes an excess of copper in the etching solution, resulting in a serious problem in its treatment. Usually, a part of the etching solution is taken out and electrolytically reduced to deposit metallic copper. That CuCl 2 + 2e - → Cu + 2 Cl - The reaction to perform the, or collected to obtain copper carbonate by the reaction of removing the collection and copper hydrochloric copper powder, or by chemical reaction eg with carbonates, Medium Obtaining copper oxide by the sum was performed. Copper is easily recovered by these recovery operations and the etching solution is stabilized, but the recovery operation is troublesome, and continuous operation is difficult.
【0006】[0006]
【発明の目的】本発明は、前記従来技術の問題点を解決
し、簡単な手法で薬品を使用することなく、塩化銅エッ
チング液を再生すると同時に過剰な銅を純粋な金属銅と
して回収し資源としての有効利用を目指すことを可能に
する銅エッチング液の再生方法を提供することを目的と
する。It is an object of the present invention to solve the above-mentioned problems of the prior art and to regenerate the copper chloride etching solution without using chemicals by a simple method, and at the same time, recover excess copper as pure metallic copper and use it as a resource. It is an object of the present invention to provide a method for reclaiming a copper etching solution that enables the effective utilization of the above.
【0007】[0007]
【問題点を解決するための手段】本発明は、塩化第一銅
を含む塩化銅エッチング廃液を、隔膜により陽極室と陰
極室に仕切られた電解槽の陰極室に供給して過剰の銅イ
オンを金属銅として陰極表面に析出させた後、前記エッ
チング廃液を前記陽極室に供給し前記塩化第一銅を塩化
第二銅に変換して銅エッチング液として再生することを
特徴とする方法である。According to the present invention, a copper chloride etching waste liquid containing cuprous chloride is supplied to a cathode chamber of an electrolytic cell which is divided by a diaphragm into an anode chamber and a cathode chamber to supply excess copper ions. Is deposited on the cathode surface as metallic copper, the etching waste liquid is supplied to the anode chamber and the cuprous chloride is converted into cupric chloride to be regenerated as a copper etching liquid. .
【0008】以下本発明を詳細に説明する。エッチング
廃液中の塩化銅の一部はプリント基板の銅を溶解して前
述のように塩化第一銅(Cu2Cl2)に変換され該エッチン
グ廃液は塩化第二銅(CuCl2 )と塩化第一銅(Cu2Cl2)
の混合液となり、当初と比較して銅イオン濃度が上昇し
ている。本発明では、まず前記エッチング廃液中の過剰
な銅イオンを陰極室で電解的に還元して金属銅に変換し
て陰極表面に析出させることにより前記エッチング廃液
中の銅イオン濃度を当初のレベルまで減少させ、更に該
エッチング廃液中のエッチングには不要な塩化第一銅を
陽極室中で塩化第二銅に酸化して前記エッチング廃液を
当初と同一組成のエッチング液に再生する。The present invention will be described in detail below. Part of the copper chloride in the etching waste liquid dissolves the copper of the printed circuit board and is converted into cuprous chloride (Cu 2 Cl 2 ) as described above, and the etching waste liquid contains cupric chloride (CuCl 2 ) and chloride. Copper (Cu 2 Cl 2 )
And the copper ion concentration is higher than at the beginning. In the present invention, first, the excess copper ions in the etching waste liquid are electrolytically reduced in the cathode chamber to be converted into metallic copper to be deposited on the cathode surface to deposit the copper ion concentration in the etching waste liquid to the initial level. Further, cuprous chloride, which is unnecessary for etching in the etching waste liquid, is oxidized to cupric chloride in the anode chamber to regenerate the etching waste liquid into an etching liquid having the same composition as the original.
【0009】前記混合液であるエッチング廃液を2室法
電解槽の陰極室側に導くと、一部の銅がCuCl2 + 2e- →
Cu + 2 Cl- 又はCu2Cl2 + 2e- → 2Cu + 2 Cl- の
反応で銅に変換されて陰極表面に析出しかつ塩素イオン
を生成する。陰極室側ではこの反応の他に2CuCl2 +
2e- → Cu2Cl2 + 2 Cl - の反応が生ずる可能性もある
が、実際には陰極電位を零又は卑に保つことにより該電
位で安定な金属銅の生成が起こり僅かにpHが低下す
る。しかしpHが4以下であればpHに関係なくかつ電
位に関係なく金属銅の析出が優先して起こる。[0009] leads to the cathode chamber side of the 2-chamber electrolytic cell the etching waste liquid which is the mixture, a portion of the copper CuCl 2 + 2e - →
It is converted into copper by the reaction of Cu + 2 Cl − or Cu 2 Cl 2 + 2e − → 2Cu + 2 Cl − , is deposited on the cathode surface, and produces chlorine ions. In addition to this reaction on the cathode chamber side, 2CuCl 2 +
2e - → Cu 2 Cl 2 + 2 Cl - of the reaction there is a possibility of occurring, actually decreases slightly pH generation occurs stable metallic copper in said potential by maintaining the cathode potential to zero or less noble To do. However, if the pH is 4 or less, the deposition of metallic copper takes place preferentially regardless of the pH and regardless of the potential.
【0010】本発明方法における陰極室還元で析出させ
るべき銅イオンの量は当初の銅イオンより過剰な銅イオ
ンつまりプリント基板等の被メッキ材から溶出した銅に
相当する量の銅のみである。従って過剰に通電して金属
銅を大量に析出させて銅イオン濃度を過度に減少させる
ことは避けるべきである。陰極室における還元反応が上
述の通り1価の銅と2価の銅の還元の2種類の反応を含
むため、必要量の銅イオンを金属銅として析出させるた
めに必要な理論電気量を正確に算出することはできな
い。従って実際の運転の際には、前もって経験的に電流
量対銅析出量を決めておき、エッチング廃液中の過剰量
の銅イオンを析出されるために必要な電気量を算出し、
(時間当たりの通電量)×(時間)で対応する電気量を
流して過剰の銅イオンをエッチング廃液から除去しかつ
所定量の金属銅を陰極表面に析出させる。The amount of copper ions to be deposited by the reduction in the cathode chamber in the method of the present invention is copper ions in excess of the initial copper ions, that is, the amount of copper corresponding to the amount of copper eluted from the material to be plated such as a printed circuit board. Therefore, excessive energization to deposit a large amount of metallic copper to reduce the copper ion concentration excessively should be avoided. Since the reduction reaction in the cathode chamber includes two kinds of reactions, that is, reduction of monovalent copper and reduction of divalent copper as described above, the theoretical amount of electricity required for depositing a necessary amount of copper ions as metallic copper can be accurately measured. It cannot be calculated. Therefore, during actual operation, the amount of current versus the amount of copper deposition is empirically determined in advance, and the amount of electricity required to deposit an excessive amount of copper ions in the etching waste liquid is calculated,
A corresponding amount of electricity is applied by (current amount per hour) × (hour) to remove excess copper ions from the etching waste liquid and deposit a predetermined amount of metallic copper on the cathode surface.
【0011】陰極表面に析出した金属銅は該表面から掻
き落としても良く、又陰極の形状をドラム状として箔を
形成して連続的に剥離するようにしても良い。又陰極を
陽極より僅かに小さくして実質電流密度を上昇させデン
トライト状で液中に析出させ濾過して除去することもで
きる。このように電解槽の陰極室内で濃度が適正化され
た塩化第一銅と塩化第二銅の混合液は次いで電解槽の陽
極室に供給される。この混合液中の塩化第一銅は陽極酸
化されて塩化第二銅に変換される(Cu2Cl2 + 2 Cl- →
2 CuCl2 + 2e- ) 。この陽極酸化反応を起こさせるた
めに必要な電位は約0.3 〜0.4 Vであり、この電位では
陽極側では塩素発生や酸素発生は通常生じないが、仮に
生じたとしても前記塩素や酸素は塩化第一銅の酸化に使
用されるため実質上塩化第一銅の酸化は100 %の電流効
率で進行する。The metallic copper deposited on the cathode surface may be scraped off from the surface, or the cathode may be formed into a drum shape to form a foil and continuously peeled off. It is also possible to make the cathode slightly smaller than the anode to increase the actual current density, deposit in the liquid in the form of dendrite, and remove by filtration. The mixed solution of cuprous chloride and cupric chloride whose concentration has been optimized in the cathode chamber of the electrolytic cell is then supplied to the anode chamber of the electrolytic cell. The cuprous chloride in the mixed solution is converted into cupric chloride is anodized (Cu 2 Cl 2 + 2 Cl - →
2 CuCl 2 + 2e -). The potential required for causing this anodic oxidation reaction is about 0.3 to 0.4 V. At this potential, chlorine and oxygen are not normally generated on the anode side. Since it is used for the oxidation of cuprous chloride, substantially the oxidation of cuprous chloride proceeds at a current efficiency of 100%.
【0012】従って過剰な銅イオンを除去されたエッチ
ング廃液中の塩化第一銅の殆ど全てが塩化第二銅に酸化
される。この際に必要とされる電気量はエッチング廃液
中の1価の銅と2価の銅の割合や電解条件等によって若
干変動するため、使用するエッチング廃液や電解条件に
応じて適宜設定する。本発明の再生方法はエッチング廃
液を集めて行ってもよいが、エッチング槽に前記再生用
電解槽を接続してエッチング廃液を循環させ連続的に再
生しかつ再使用することが望ましい。又本発明方法にお
ける制御は銅イオン濃度で行っても良く、又水素イオン
濃度(pH)で行っても良い。Therefore, almost all of the cuprous chloride in the etching waste liquid from which excess copper ions have been removed is oxidized to cupric chloride. Since the amount of electricity required at this time varies slightly depending on the ratio of monovalent copper and divalent copper in the etching waste liquid, electrolysis conditions, and the like, it is appropriately set according to the etching waste liquid and electrolysis conditions used. The regeneration method of the present invention may be carried out by collecting the etching waste liquid, but it is desirable to connect the above-mentioned regeneration electrolytic bath to the etching bath to circulate the etching waste liquid for continuous regeneration and reuse. The control in the method of the present invention may be performed by the copper ion concentration or the hydrogen ion concentration (pH).
【0013】次に本発明方法に使用できる再生用電解槽
に関し説明する。使用する電解槽本体の材質は特に限定
されずエッチング時の温度に応じて例えば硬質塩化ビニ
ル、アクリル樹脂、ポリプロピレン、ポリエチレン等の
耐食性の材質を適宜選択し銅の還元及び酸化を行えば良
く、幅広い条件下でほぼ100 %の効率で目的を達成する
ことができる。前記材質として高価ではあるがフッ素樹
脂やグラスファイバー強化樹脂等の使用も可能である。
しかし金属製材料はエッチング廃液に溶出して液の汚染
を招くため使用しないことが望ましい。Next, the electrolytic cell for regeneration which can be used in the method of the present invention will be described. The material of the electrolytic cell body to be used is not particularly limited, and corrosion-resistant materials such as hard vinyl chloride, acrylic resin, polypropylene, polyethylene, etc. may be appropriately selected according to the temperature at the time of etching to reduce and oxidize copper, and a wide range is available. Under the conditions, the objective can be achieved with almost 100% efficiency. Although the material is expensive, it is possible to use fluororesin or glass fiber reinforced resin.
However, it is desirable not to use a metallic material because it elutes into the etching waste liquid and causes contamination of the liquid.
【0014】隔膜は電流は流すが液の流通を阻害する材
質から適宜選択すれば良く特にイオン交換能は要求され
ないため、通常使用されるアスベスト隔膜やポリプロピ
レン、濾布、多孔質ポリテトラフルオロエチレン不織布
等が使用することが好ましい。しかし商品名ナフィオン
等で知られる高価な陽イオン交換膜を使用しても良い。
該イオン交換膜の使用の場合には陽極室側の銅イオンが
陰極側に移動する可能性があるが特に価数選択性のある
陽イオン交換膜であれば1価のイオンが主として移動す
るため再生した塩化第二銅中の1価の銅イオンが減少す
るため好都合である。The diaphragm may be appropriately selected from materials that allow the flow of electric current but impede the flow of the liquid, and ion exchange capacity is not particularly required. Therefore, asbestos diaphragm, polypropylene, filter cloth, and porous polytetrafluoroethylene non-woven fabric that are usually used are used. And the like are preferably used. However, an expensive cation exchange membrane known under the trade name Nafion or the like may be used.
When the ion exchange membrane is used, copper ions on the side of the anode chamber may move to the side of the cathode, but especially in the case of a cation exchange membrane having valence selectivity, monovalent ions mainly move. This is advantageous because monovalent copper ions in the regenerated cupric chloride are reduced.
【0015】陰極の材質は慎重に選択することが必要で
ある。エッチング廃液が供給される陰極室内の陰極は塩
酸又は塩化物浴の場合に腐食が激しくなる傾向があり通
常使用されるニッケルや鉄は使用しない方が良い。炭素
は腐食されにくく目的に合っているが、銅の析出が炭素
表面の孔中で起こると炭素自体が崩れてしまうことがあ
るので炭素を使用する場合には導電性の良好なグラファ
イト質の非多孔質炭素系物質とすることが望ましい。又
チタンは表面が腐食したり水素化物を形成する傾向があ
るがその量は僅かであり実質的に無視でき液の不純物レ
ベルが上昇することはないので有効に使用することがで
きる。又チタン陰極上に析出した銅は極めて容易に該陰
極から引き剥がすことができ、又銅粉として液中に析出
するので陰極交換が必要なくなりより合目的的である。
チタン以外の他の弁金属例えばジルコニウム、タンタル
及びニオブ等も同様に有効であるが、高価であるため使
用目的に応じて適切に選択する必要がある。The material of the cathode needs to be carefully selected. The cathode in the cathode chamber to which the etching waste liquid is supplied tends to be severely corroded in the case of hydrochloric acid or chloride bath, and it is better not to use nickel or iron which is usually used. Although carbon is less likely to be corroded and is suitable for the purpose, if copper deposition occurs in the pores of the carbon surface, the carbon itself may collapse. It is desirable to use a porous carbon-based material. Further, titanium tends to corrode the surface or form hydrides, but the amount thereof is so small that it can be substantially ignored and the impurity level of the liquid does not rise, so that it can be effectively used. Further, the copper deposited on the titanium cathode can be peeled off from the cathode very easily, and since it is deposited in the liquid as copper powder, it is more purposeful because the cathode need not be replaced.
Valve metals other than titanium, such as zirconium, tantalum, and niobium, are also effective, but are expensive and must be appropriately selected according to the purpose of use.
【0016】陽極の材質はこのような塩酸水溶液に耐性
のある金属電極が望ましい。即ち基体としてチタンやチ
タン合金を使用しその表面に酸化ルテニウム等の酸化物
被覆を施した白金族金属酸化物電極であり、該電極は前
記水溶液に対する耐性が極めて大きく、Cu+ →Cu2+(Cu
2Cl2→CuCl2 )の反応に対する活性も十分あり、副反応
として塩素発生が生じてもこの塩素が未反応の1価の銅
イオンを酸化し結果として塩化第二銅となる(Cu2Cl2 +
Cl2 → 2 CuCl2 ) ため実質的なガス発生がなく、極
めて好都合である。又前記白金族金属酸化物電極以外に
通常使用される白金メッキチタン電極も本発明で使用で
きるが、僅かであるが前記白金族金属酸化物電極に対し
て耐食性が劣る。The material of the anode is preferably a metal electrode resistant to such hydrochloric acid aqueous solution. That is, it is a platinum group metal oxide electrode using titanium or a titanium alloy as a substrate and coating the surface thereof with an oxide such as ruthenium oxide. The electrode has extremely high resistance to the aqueous solution, and Cu + → Cu 2+ ( Cu
2 Cl 2 → CuCl 2) reaction activity has enough for the side reactions chlorine evolution is chlorine even if the the cupric chloride monovalent oxidation results of copper ions in the unreacted (Cu 2 Cl 2 +
Cl 2 → 2 CuCl 2 ), so there is no substantial gas generation, which is extremely convenient. Further, a platinum-plated titanium electrode which is usually used in addition to the platinum group metal oxide electrode can be used in the present invention, but its corrosion resistance is inferior to that of the platinum group metal oxide electrode to a small extent.
【0017】従来からこれ以外にグラファイトに代表さ
れる炭素電極が使用されているが、この炭素電極も本発
明で使用できる。但し部分的に炭素が崩れて液中に浮遊
することがあるので液を濾過することが望ましい。又比
較的低い電位でC + 4 OH- →CO2 + 2H2O + 4e- で示さ
れる反応で炭素の消耗が生ずるため注意が必要である。
しかしこれに起因する電流効率の低下は無視できる程度
である。Conventionally, a carbon electrode typified by graphite has been used, but this carbon electrode can also be used in the present invention. However, it is desirable to filter the liquid because carbon may partially collapse and float in the liquid. Also at a relatively low potential C + 4 OH - → CO 2 + 2H 2 O + 4e - it should be noted that the reaction consumption of the carbon occurs at indicated by.
However, the decrease in current efficiency due to this is negligible.
【0018】本発明における再生電解槽の運転条件特に
電流密度は前述の電極材料や膜抵抗に基づいて決定すれ
ば良く、通常1〜30A/dm2 とする。30A/dm2 を越す
と電圧が上昇し陰極での効率が不安定になり時として水
素発生が起こることがある。又1A/dm2 未満の電流密
度では十分に低い電圧で目的とする反応が進行するが処
理量が小さくなり、処理量を増加するためには設備を巨
大化しなければならない。The operating conditions of the regenerating electrolytic cell in the present invention, especially the current density, may be determined based on the above-mentioned electrode material and membrane resistance, and is usually 1 to 30 A / dm 2 . When it exceeds 30 A / dm 2 , the voltage rises, the efficiency at the cathode becomes unstable, and hydrogen generation sometimes occurs. If the current density is less than 1 A / dm 2 , the desired reaction proceeds at a sufficiently low voltage, but the treatment amount becomes small, and the equipment must be made huge in order to increase the treatment amount.
【0019】[0019]
【実施例】次に本発明方法による銅エッチング廃液の再
生に関する実施例を記載するが該実施例は本発明を限定
するものではない。EXAMPLES Next, examples relating to the regeneration of copper etching waste liquid by the method of the present invention will be described, but the examples do not limit the present invention.
【実施例1】硬質塩化ビニル製の縦100 mm、横(奥行
き)60mm、高さ120 mm(陽極室)の隔膜付箱型電解
槽を用意した。隔膜としてフッ素樹脂製メンブレンフィ
ルターを、又陰極として70mm×70mmの研磨したチタ
ン板をそれぞれ使用し、この陰極を隔膜から30mm離し
て設置した。又陽極として陰極と同形状の酸化ルテニウ
ムを被覆したチタン電極を使用し、前記隔膜から30mm
離して設置し、この再生用電解槽をエッチング槽に接続
した。Example 1 A box-type electrolytic cell with a diaphragm made of hard vinyl chloride and having a length of 100 mm, a width (depth) of 60 mm, and a height of 120 mm (anode chamber) was prepared. A fluororesin membrane filter was used as the diaphragm, and a 70 mm × 70 mm polished titanium plate was used as the cathode, and the cathode was placed 30 mm away from the diaphragm. Also, a titanium electrode coated with ruthenium oxide having the same shape as the cathode is used as the anode, and 30 mm from the diaphragm.
It was installed separately and this regenerating electrolytic bath was connected to the etching bath.
【0020】エッチング槽から排出されるエッチング廃
液は前記電解槽に陰極室底部から入り陰極還元された
後、陰極室上部から取り出されて次いで陽極室底部から
陽極室に入り陽極酸化された後、陽極室上部から取り出
されるようにした。又陽極室の高さは陰極室の高さより
10mm程度高くして陽極からガス発生があっても圧力の
バランスが取れるようにした。更に陽極室から取り出さ
れた再生液は攪拌タンク内で十分に攪拌された後、前記
エッチング槽に循環し再使用するようにした。エッチン
グ液として3モル/リットルのCuCl2.2H20に食塩を飽和
するまで溶解した液を使用し、前記エッチング槽でのプ
リント基板のエッチングに使用した。エッチング後の銅
イオン濃度はCu+ 及びCu2+とも約2モル/リットルであ
り、このエッチング廃液の液温を30℃に調整した後、前
記再生用電解槽の陰極室へ0.1リットル/時の速度で供
給した。陰極室の電流量は過剰な銅イオン(約1モル/
リットル)が析出するように約17Aとした。The etching waste liquid discharged from the etching bath enters the electrolytic bath from the bottom of the cathode chamber, undergoes cathodic reduction, is taken out from the upper part of the cathode chamber, then enters the anode chamber from the bottom of the anode chamber, is anodized, and is then anodized. It was taken out from the upper part of the chamber. The height of the anode chamber is higher than that of the cathode chamber.
The height was increased by about 10 mm so that the pressure could be balanced even if gas was generated from the anode. Further, the regenerated liquid taken out from the anode chamber was thoroughly stirred in the stirring tank, and then circulated in the etching tank for reuse. Using a solution obtained by dissolving to saturation sodium chloride to 3 moles / liter CuCl 2 .2H 2 0 as an etchant was used to etch the printed circuit board in the etching bath. The copper ion concentration after etching was about 2 mol / liter for both Cu + and Cu 2+ , and after adjusting the liquid temperature of this etching waste liquid to 30 ° C., 0.1 liter / hour was applied to the cathode chamber of the regeneration electrolytic cell. Feed at rate. The amount of current in the cathode chamber is excessive copper ion (about 1 mol /
It was set to about 17 A so that 1 liter) was deposited.
【0021】陰極室上部から取り出されたエッチング廃
液は目開き3μmのメンブランフィルタを通して陽極室
へ供給され、電流値17A(約35A/dm2 )で電解を行っ
たところ、前記メンブランフィルタには銅の黒色粉末が
析出するとともに陽極液としてCu2+濃度が約3モル/リ
ットルでCu+ 濃度がほぼ零の塩化銅溶液が得られ、この
塩化銅溶液はそのままエッチング液として使用可能であ
った。なお電解中に5ミリリットル/時程度の水の蒸発
があったので、前記塩化銅溶液をエッチング槽に供給す
る際に調整した。このような状態で10時間連続してエッ
チングを行ったがエッチング液の劣化は全く起こらず、
又陽極室からの塩素発生も見られなかった。陽極及び陰
極の電流効率を算出したところ両者とも約95%であっ
た。The etching waste liquid taken out from the upper part of the cathode chamber was supplied to the anode chamber through a membrane filter having an opening of 3 μm and electrolyzed at a current value of 17 A (about 35 A / dm 2 ). A copper chloride solution having a black powder deposited and a Cu 2+ concentration of about 3 mol / l and a Cu + concentration of almost zero was obtained as an anolyte, and this copper chloride solution was directly usable as an etching solution. Since there was evaporation of water of about 5 ml / hour during the electrolysis, it was adjusted when the copper chloride solution was supplied to the etching tank. In this state, etching was continuously performed for 10 hours, but no deterioration of the etching solution occurred,
Neither was chlorine generated from the anode chamber. When the current efficiencies of the anode and cathode were calculated, both were about 95%.
【0022】[0022]
【発明の効果】本発明は、塩化第一銅を含む塩化銅エッ
チング廃液を、隔膜により陽極室と陰極室に仕切られた
電解槽の陰極室に供給して過剰の銅イオンを金属銅とし
て陰極表面に析出させた後、前記エッチング廃液を前記
陽極室に供給し前記塩化第一銅を塩化第二銅に変換して
銅エッチング液として再生することを特徴とする方法で
ある。塩化第二銅を含む銅エッチング液はエッチングの
進行に従って銅が溶解して銅イオンが過剰となるととも
に塩化第二銅が還元されて塩化第二銅と塩化第一銅の混
合液のエッチング廃液となる。従来はこのエッチング廃
液の一部を取り出して銅回収を行っていたが、銅回収と
エッチング廃液の再生を同時に行うことはできず、再生
操作に手間が掛かり有効な方法とはいえなかった。Industrial Applicability According to the present invention, a copper chloride etching waste liquid containing cuprous chloride is supplied to a cathode chamber of an electrolytic cell which is partitioned by a diaphragm into an anode chamber and a cathode chamber, and excess copper ions are converted into metallic copper into a cathode. After depositing on the surface, the etching waste liquid is supplied to the anode chamber, the cuprous chloride is converted to cupric chloride and regenerated as a copper etching liquid. The copper etching solution containing cupric chloride dissolves copper as the etching progresses, and copper ions become excessive, and cupric chloride is reduced and the etching waste solution of the mixed solution of cupric chloride and cuprous chloride is used. Become. Conventionally, a part of this etching waste liquid was taken out to recover copper, but copper recovery and regeneration of the etching waste liquid cannot be carried out at the same time, and the recycling operation is time-consuming and not an effective method.
【0023】これに対し、本発明方法では前述の通り構
成することにより、銅イオンが過剰で塩化第二銅の一部
が塩化第一銅に変換されたエッチング廃液の再生と銅回
収を単一の電解槽で比較的簡単な操作で行うことがで
き、陰極室で析出した金属銅を回収し陽極室でほぼ塩化
第二銅のみを含む再生されたエッチング液を得ることが
できる。陰極をドラム状とすると、該ドラム状陰極を回
転させて該陰極上に析出する金属銅を箔状等として連続
的に得ることができる。On the other hand, in the method of the present invention, by the above-described configuration, the etching waste liquid in which copper ions are excessive and a part of cupric chloride is converted into cuprous chloride is used for the regeneration and the recovery of copper. Can be carried out by a relatively simple operation in the electrolytic cell, and the metal copper deposited in the cathode chamber can be recovered to obtain a regenerated etching solution containing substantially only cupric chloride in the anode chamber. When the cathode is drum-shaped, the drum-shaped cathode can be rotated to continuously obtain metallic copper deposited on the cathode in the form of a foil or the like.
【0024】更に本発明方法の再生用電解槽をエッチン
グ槽近傍に該エッチング槽と接続できるように設置する
と、エッチング槽が生成するエッチング廃液をそのまま
前記再生用電解槽に循環し外部に取り出すことなくエッ
チング廃液の再生を行うことができるため、付帯設備を
必要とすることなく前述のエッチング廃液の再生及び銅
回収を行うことができる。Further, when the regenerating electrolytic bath of the method of the present invention is installed in the vicinity of the etching bath so that it can be connected to the etching bath, the etching waste liquid generated in the etching bath is circulated to the regenerating electrolysis bath as it is without being taken out to the outside. Since the etching waste liquid can be regenerated, the above-described etching waste liquid can be regenerated and copper can be recovered without the need for additional equipment.
Claims (3)
を、隔膜により陽極室と陰極室に仕切られた電解槽の陰
極室に供給して過剰の銅イオンを金属銅として陰極表面
に析出させた後、前記エッチング廃液を前記陽極室に供
給し前記塩化第一銅を塩化第二銅に変換して銅エッチン
グ液として再生することを特徴とする方法。1. A copper chloride etching waste liquid containing cuprous chloride is supplied to a cathode chamber of an electrolytic cell partitioned by a diaphragm into an anode chamber and a cathode chamber to deposit excess copper ions as metallic copper on the cathode surface. After that, the etching waste liquid is supplied to the anode chamber, the cuprous chloride is converted into cupric chloride and regenerated as a copper etching liquid.
析出した銅を掻き取りながら連続的に再生を行うように
した請求項1に記載の方法。2. The method according to claim 1, wherein the cathode is a conductive drum, and the copper deposited on the surface of the cathode is scraped to continuously reproduce the copper.
チング槽中のエッチング廃液を前記電解槽に供給し再生
した後、前記エッチング槽に循環し再使用するようにし
た請求項1に記載の方法。3. The electrolytic bath is connected to an etching bath, and the etching waste liquid in the etching bath is supplied to the electrolytic bath for regeneration, and then circulated to the etching bath for reuse. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17108793A JP3294678B2 (en) | 1993-06-16 | 1993-06-16 | Regeneration method of copper etchant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17108793A JP3294678B2 (en) | 1993-06-16 | 1993-06-16 | Regeneration method of copper etchant |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH073476A true JPH073476A (en) | 1995-01-06 |
| JP3294678B2 JP3294678B2 (en) | 2002-06-24 |
Family
ID=15916762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17108793A Expired - Fee Related JP3294678B2 (en) | 1993-06-16 | 1993-06-16 | Regeneration method of copper etchant |
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| Country | Link |
|---|---|
| JP (1) | JP3294678B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50117902U (en) * | 1974-03-08 | 1975-09-26 | ||
| JP2008153640A (en) * | 2006-11-24 | 2008-07-03 | Shinko Electric Ind Co Ltd | Method and apparatus for regenerating alkaline permanganate etching solution or desmear solution |
| CN115537816A (en) * | 2022-10-08 | 2022-12-30 | 青岛理工大学 | A swirl electrolysis system and method for regeneration of acid copper chloride etchant and copper recovery |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4010034A1 (en) | 1990-03-29 | 1991-10-02 | Hoellmueller Maschbau H | DEVICE FOR ELECTROLYTIC REGENERATION OF A METAL CONTAINER, ESPECIALLY COPPER CONTAINER |
-
1993
- 1993-06-16 JP JP17108793A patent/JP3294678B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50117902U (en) * | 1974-03-08 | 1975-09-26 | ||
| JP2008153640A (en) * | 2006-11-24 | 2008-07-03 | Shinko Electric Ind Co Ltd | Method and apparatus for regenerating alkaline permanganate etching solution or desmear solution |
| CN115537816A (en) * | 2022-10-08 | 2022-12-30 | 青岛理工大学 | A swirl electrolysis system and method for regeneration of acid copper chloride etchant and copper recovery |
| CN115537816B (en) * | 2022-10-08 | 2024-06-07 | 青岛理工大学 | A cyclonic electrolysis system and method for regenerating acidic cupric chloride etchant and recovering copper |
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| Publication number | Publication date |
|---|---|
| JP3294678B2 (en) | 2002-06-24 |
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