JPH0735706A - Thin film X-ray diffractometer using X-ray conduit optical system - Google Patents

Thin film X-ray diffractometer using X-ray conduit optical system

Info

Publication number
JPH0735706A
JPH0735706A JP20008593A JP20008593A JPH0735706A JP H0735706 A JPH0735706 A JP H0735706A JP 20008593 A JP20008593 A JP 20008593A JP 20008593 A JP20008593 A JP 20008593A JP H0735706 A JPH0735706 A JP H0735706A
Authority
JP
Japan
Prior art keywords
ray
rays
optical system
sample
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20008593A
Other languages
Japanese (ja)
Inventor
Hiromoto Nakazawa
弘基 中沢
Shuichi Shimomura
周一 下村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP20008593A priority Critical patent/JPH0735706A/en
Publication of JPH0735706A publication Critical patent/JPH0735706A/en
Pending legal-status Critical Current

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  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

(57)【要約】 【目的】 X線を浅い角度で入射させても、回折X線を
十分な強度で測定し得る薄膜X線回折装置を提供する。 【構成】 X線を所定の角度で試料表面に入射し、試料
表面から出る2次X線を検出器で検出し、試料の構造或
いは組成を調べて同定を行うためのX線回折装置におい
て、薄膜試料(2)又は試料表面の一定の面積から出る2
次X線(3)のうちから特定な角度の平行な2次X線だけ
を選択的に検出するX線導管からなる光学系(4)を、試
料(2)と検出器(5)の間に配置したことを特徴としてい
る複数本のX線導管を束ねた光学系である。
(57) [Summary] [Object] To provide a thin film X-ray diffractometer capable of measuring diffracted X-rays with sufficient intensity even when X-rays are incident at a shallow angle. [Arrangement] In an X-ray diffractometer for injecting X-rays at a predetermined angle onto a sample surface, detecting secondary X-rays emitted from the sample surface with a detector, and examining the structure or composition of the sample for identification. Thin film sample (2) or 2 from a certain area on the sample surface
Between the sample (2) and the detector (5), an optical system (4) consisting of an X-ray conduit for selectively detecting only parallel secondary X-rays of a specific angle from the next X-rays (3) is installed. It is an optical system in which a plurality of X-ray conduits are bundled.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はX線回折装置に関し、特
に薄膜の構造や組成を同定するのに適したX線回折装置
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray diffractometer, and more particularly to an X-ray diffractometer suitable for identifying the structure and composition of thin films.

【0002】[0002]

【従来の技術】材料の合成や製品の製造過程において、
性能向上や品質管理などのために物質の構造や組成を知
る必要がある。そのための測定装置として様々な機器が
用いられるが、X線回折装置は構造を知るために多くの
分野で利用されている。特に薄膜材料や表面を利用した
材料は、新しい機能を持つ材料として研究開発が進めら
れており、構造や組成を調べることが非常に重要にな
り、X線回折装置を利用する大きな分野となっている。
2. Description of the Related Art In the process of synthesizing materials and manufacturing products,
It is necessary to know the structure and composition of substances for performance improvement and quality control. Various devices are used as a measuring device for that purpose, and the X-ray diffractometer is used in many fields to know the structure. In particular, thin film materials and materials using the surface are being researched and developed as materials with new functions, and it is very important to investigate the structure and composition, and this is a major field in which X-ray diffractometers are used. There is.

【0003】従来の粉末X線回折装置は、ゼーマン・ボ
ーリン型光学系を用いているので、試料をθ回転する間
に検出器を2θ回転させている。そのため、一般には回
折角度(θ)が大きくなるに従い、X線の照射面積は小さ
くなる。薄膜や表面を調べようとする場合には、回折X
線強度が弱いので、X線を表面に広く入射するようにθ
を浅く固定し、検出器だけを回転させて測定している。
Since the conventional powder X-ray diffractometer uses the Zeeman-Bollin type optical system, the detector is rotated by 2θ while the sample is rotated by θ. Therefore, generally, as the diffraction angle (θ) increases, the X-ray irradiation area decreases. Diffraction X
Since the line intensity is weak, make sure that X-rays are widely incident on the surface.
Is fixed shallowly and only the detector is rotated for measurement.

【0004】[0004]

【発明が解決しようとする課題】しかし、薄膜の材料や
物質の表面の構造を調べようとするときに、表面からの
回折X線の強度を増加させるためにθを固定してX線を
浅い角度で入射させるが、そのためにゼーマン・ボーリ
ンの光学系の条件が満たされず、高角の回折X線(2次
X線)は検出器の位置に焦点を結ばない。したがって、
回折X線のピークは広がり、角度精度が悪くなるという
問題点があった。
However, when the structure of the surface of the material or substance of the thin film is to be investigated, in order to increase the intensity of the diffracted X-ray from the surface, θ is fixed and the X-ray is made shallow. Although the light is incident at an angle, the conditions of the Zeeman-Bohlin optical system are not satisfied, and the high-angle diffracted X-rays (second-order X-rays) are not focused on the position of the detector. Therefore,
There is a problem that the peak of the diffracted X-ray spreads and the angle accuracy deteriorates.

【0005】本発明は、上記問題点を解決し、X線を浅
い角度で入射させても、回折X線を十分な強度で測定し
得る薄膜X線回折装置を提供することを目的としてい
る。
An object of the present invention is to solve the above problems and to provide a thin film X-ray diffractometer capable of measuring diffracted X-rays with sufficient intensity even when X-rays are incident at a shallow angle.

【0006】[0006]

【課題を解決するための手段】この問題を解決するため
には、平行なX線だけを効率良く検出する必要があるこ
とに鑑みて、本発明者は、ある特定の面積から出る平行
なX線を取り出すためにX線導管(XGT)を束ねて平行
X線束フィルタとして使用するX線光学系を見い出し、
本発明をなしたものである。
In order to solve this problem, in view of the need to efficiently detect only parallel X-rays, the present inventor has found that parallel X-rays emitted from a certain specific area. Find an X-ray optical system that bundles X-ray conduits (XGT) to extract rays and uses it as a parallel X-ray flux filter.
It is the invention.

【0007】[0007]

【作用】以下に本発明を更に詳細に説明する。The present invention will be described in more detail below.

【0008】X線導管はガラス管の内壁を全反射を利用
してX線を導くので、ガラス管における浅い臨界角を満
たすような、ほぼ平行なX線だけを導くことができるの
で、これを利用したX線導管光学系を用いることによ
り、薄膜試料などの回折X線を十分な強度で測定でき
る。X線導管光学系を用いた薄膜X線回折装置の作用は
次のとおりである。
Since the X-ray conduit guides X-rays through the inner wall of the glass tube by utilizing total internal reflection, it is possible to guide only substantially parallel X-rays that satisfy the shallow critical angle in the glass tube. By using the utilized X-ray conduit optical system, it is possible to measure diffracted X-rays such as a thin film sample with sufficient intensity. The operation of the thin film X-ray diffractometer using the X-ray conduit optical system is as follows.

【0009】図1は本発明のX線光学系の原理図であ
る。まず、X線源から発生したX線(1)を平行なビーム
として試料(2)の表面に非常に浅い角度で入射させる。
試料は薄膜或いは物質表面の一定の面積である。試料か
らの回折X線(3)は、その持つエネルギーにより、様々
な方向へ出ていくが、X線導管を束ねたX線導管光学系
(4)を特定の角度に設置することにより、試料表面全体
からこの方向へ出てくるX線だけを検出器(5)により選
択的に検出することができる。すなわち、この光学系に
よれば、通常のX線回折計に比べて強い強度の回折X線
を測定できる。この時、検出器にエネルギー分解能を持
つ固体検出器を用いると、複数の回折X線の検出がで
き、また、蛍光X線により組成に関する情報も得られ
る。
FIG. 1 is a principle diagram of the X-ray optical system of the present invention. First, the X-ray (1) generated from the X-ray source is incident on the surface of the sample (2) as a parallel beam at a very shallow angle.
The sample is a thin film or a certain area on the surface of the substance. Diffracted X-rays (3) from the sample go out in various directions depending on the energy of the X-ray conduit optical system that bundles the X-ray conduits.
By setting (4) at a specific angle, only the X-rays emitted in this direction from the entire sample surface can be selectively detected by the detector (5). That is, according to this optical system, it is possible to measure diffracted X-rays having a higher intensity than that of a normal X-ray diffractometer. At this time, if a solid-state detector having energy resolution is used as the detector, a plurality of diffracted X-rays can be detected, and the fluorescent X-rays can also provide information on the composition.

【0010】次に本発明の実施例を示す。Next, examples of the present invention will be described.

【0011】[0011]

【実施例】【Example】

【0012】図2に本発明のX線導管光学系による薄膜
X線回折装置を縦型ゴニオメータで構成した例を示す。
FIG. 2 shows an example in which the thin film X-ray diffractometer using the X-ray conduit optical system of the present invention is constituted by a vertical goniometer.

【0013】X線源(7)で発生したX線(1)は、ゴニオ
メータ(6)の中心に配置した薄膜試料(2)に浅い角度で
入射する。試料表面全体で回折された特定の平行なX線
はすべて、ゴニオメータ(6)の2θ軸に取付けられたX
線導管光学系(4)を通り検出器(5)で測定される。この
時、他の方向へ回折をしているX線はX線導管光学系を
通過できないので、検出されない。
The X-ray (1) generated by the X-ray source (7) is incident on the thin film sample (2) arranged at the center of the goniometer (6) at a shallow angle. All the specific parallel X-rays diffracted on the entire sample surface are attached to the 2θ axis of the goniometer (6).
It is measured by the detector (5) through the line conduit optics (4). At this time, X-rays diffracting in other directions cannot be detected because they cannot pass through the X-ray conduit optical system.

【0014】X線源には通常のX線源の他に放射光など
も利用できる。また、試料への入射X線に対しても、必
要に応じて、ソーラースリットや同様のX線導管光学系
を用いることができる。
As the X-ray source, radiation light or the like can be used in addition to the usual X-ray source. Also, for incident X-rays on the sample, a solar slit or similar X-ray conduit optical system can be used if necessary.

【0015】[0015]

【発明の効果】以上説明したように、本発明によれば、
薄膜試料表面全体からの平行な回折X線だけを効率良く
捕らえることができ、異なる回折角のX線を遮断できる
ので、従来の通常の粉末X線回折装置よりも強度が強
く、角度精度が高い測定が可能となり、特に薄膜試料に
対して有効である。
As described above, according to the present invention,
Since only parallel diffracted X-rays from the entire surface of the thin film sample can be efficiently captured and X-rays with different diffraction angles can be blocked, the intensity is higher and the angular accuracy is higher than the conventional powder X-ray diffractometer of the related art. It enables measurement and is particularly effective for thin film samples.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のX線光学系の原理図である。FIG. 1 is a principle diagram of an X-ray optical system of the present invention.

【図2】本発明のX線導管光学系による薄膜X線回折装
置を縦型ゴニオメータで構成した例を示す図である。
FIG. 2 is a diagram showing an example in which a thin film X-ray diffractometer using the X-ray conduit optical system of the present invention is constituted by a vertical goniometer.

【符号の説明】[Explanation of symbols]

1 入射X線 2 試料 3 回折X線 4 X線導管光学系 5 検出器 6 ゴニオメータ 7 X線源 1 incident X-ray 2 sample 3 diffracted X-ray 4 X-ray conduit optical system 5 detector 6 goniometer 7 X-ray source

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 X線を所定の角度で試料表面に入射し、
試料表面から出る2次X線を検出器で検出し、試料の構
造或いは組成を調べて同定を行うためのX線回折装置に
おいて、薄膜試料又は試料表面の一定の面積から出る2
次X線のうちから特定な角度の平行な2次X線だけを選
択的に検出するX線導管からなる光学系を、試料と検出
器の間に配置したことを特徴とする薄膜X線回折装置。
1. An X-ray is incident on a sample surface at a predetermined angle,
An X-ray diffractometer for detecting secondary X-rays emitted from the surface of a sample with a detector and performing identification by examining the structure or composition of the sample.
Thin-film X-ray diffraction, characterized in that an optical system consisting of an X-ray conduit for selectively detecting only parallel secondary X-rays of a specific angle from the next X-rays is arranged between the sample and the detector. apparatus.
【請求項2】 複数本のX線導管を束ねた光学系である
請求項1に記載の装置。
2. The apparatus according to claim 1, which is an optical system in which a plurality of X-ray conduits are bundled.
JP20008593A 1993-07-19 1993-07-19 Thin film X-ray diffractometer using X-ray conduit optical system Pending JPH0735706A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20008593A JPH0735706A (en) 1993-07-19 1993-07-19 Thin film X-ray diffractometer using X-ray conduit optical system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20008593A JPH0735706A (en) 1993-07-19 1993-07-19 Thin film X-ray diffractometer using X-ray conduit optical system

Publications (1)

Publication Number Publication Date
JPH0735706A true JPH0735706A (en) 1995-02-07

Family

ID=16418609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20008593A Pending JPH0735706A (en) 1993-07-19 1993-07-19 Thin film X-ray diffractometer using X-ray conduit optical system

Country Status (1)

Country Link
JP (1) JPH0735706A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6850593B1 (en) 1999-03-18 2005-02-01 Sii Nanotechnology Inc. Fluorescent X-ray analysis apparatus
WO2006095467A1 (en) * 2005-03-09 2006-09-14 National Institute For Materials Science X-ray diffraction analyzing method and analyzer
WO2006095468A1 (en) * 2005-03-09 2006-09-14 National Institute For Materials Science X-ray diffraction analyzer and analyzing method
JP2007304063A (en) * 2006-05-15 2007-11-22 Shimadzu Corp Solar slit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61212018A (en) * 1985-03-18 1986-09-20 Hitachi Ltd X-ray exposure device
JPS63187144A (en) * 1987-01-30 1988-08-02 Seiko Instr & Electronics Ltd Space resolving spectrometer using collimator
JPH01254849A (en) * 1988-04-05 1989-10-11 Rigaku Corp Energy dispersive type x-ray diffraction method for thin film
JPH04204399A (en) * 1990-11-30 1992-07-24 Seiko Instr Inc Soft x-rays converging device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61212018A (en) * 1985-03-18 1986-09-20 Hitachi Ltd X-ray exposure device
JPS63187144A (en) * 1987-01-30 1988-08-02 Seiko Instr & Electronics Ltd Space resolving spectrometer using collimator
JPH01254849A (en) * 1988-04-05 1989-10-11 Rigaku Corp Energy dispersive type x-ray diffraction method for thin film
JPH04204399A (en) * 1990-11-30 1992-07-24 Seiko Instr Inc Soft x-rays converging device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6850593B1 (en) 1999-03-18 2005-02-01 Sii Nanotechnology Inc. Fluorescent X-ray analysis apparatus
KR100703819B1 (en) * 1999-03-18 2007-04-04 에스아이아이 나노 테크놀로지 가부시키가이샤 Fluorescence X-Ray Analyzer
WO2006095467A1 (en) * 2005-03-09 2006-09-14 National Institute For Materials Science X-ray diffraction analyzing method and analyzer
WO2006095468A1 (en) * 2005-03-09 2006-09-14 National Institute For Materials Science X-ray diffraction analyzer and analyzing method
JP2006250646A (en) * 2005-03-09 2006-09-21 National Institute For Materials Science X-ray diffraction analyzer and X-ray diffraction analysis method
JP2006250642A (en) * 2005-03-09 2006-09-21 National Institute For Materials Science X-ray diffraction analysis method and X-ray diffraction analysis apparatus
JP2007304063A (en) * 2006-05-15 2007-11-22 Shimadzu Corp Solar slit

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