JPH0735985A - Electron microscope equipment - Google Patents

Electron microscope equipment

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Publication number
JPH0735985A
JPH0735985A JP19991193A JP19991193A JPH0735985A JP H0735985 A JPH0735985 A JP H0735985A JP 19991193 A JP19991193 A JP 19991193A JP 19991193 A JP19991193 A JP 19991193A JP H0735985 A JPH0735985 A JP H0735985A
Authority
JP
Japan
Prior art keywords
ultraviolet light
electron
lens
electron microscope
electron lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP19991193A
Other languages
Japanese (ja)
Inventor
Mitsuru Otsuka
満 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP19991193A priority Critical patent/JPH0735985A/en
Publication of JPH0735985A publication Critical patent/JPH0735985A/en
Withdrawn legal-status Critical Current

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  • Microscoopes, Condenser (AREA)

Abstract

PURPOSE:To provide an electron microscopic device having high spatial resolution and capable of forming a good-quality image. CONSTITUTION:In this electron microscopic device, an observed sample 2 is irradiated with ultraviolet rays 3 through an electron lens 1 constituted of a substance transmitting the ultraviolet rays and a photoelectron generated by such irradiation is detected by a fluorescent plate 4 so as to observe the image of the surface of the sample. Thus, the sufficient signal amount of the photoelectron is obtained without impairing the performance of the electron lens 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は光電子を用いて固体表面
を観察する電子顕微鏡装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron microscope apparatus for observing a solid surface by using photoelectrons.

【0002】[0002]

【従来の技術】光電子顕微鏡法(Photo−Emis
sion Electron Microscopy:
PEEM)は紫外光を固体表面に照射し、発生した光電
子を検出することにより該固体表面を観察する方法であ
り、材料および生物科学において大きな役割を担ってい
る。特に近年、固体表面における拡散現象の解明など、
表面科学の分野において重要な貢献を果たしつつあり、
注目を集めている。
2. Description of the Related Art Photoelectron microscopy (Photo-Emis)
sion Electron Microscopy:
PEEM) is a method of observing the surface of a solid by irradiating the surface of the solid with ultraviolet light and detecting photoelectrons generated, and plays a major role in materials and biological science. Especially in recent years, elucidation of diffusion phenomena on solid surfaces,
Is making an important contribution in the field of surface science,
It is getting attention.

【0003】しかしながら、PEEMの空間分解能は数
10〜数100nm程度であり、透過型電子顕微鏡や走
査型電子顕微鏡などの分解能と比べると桁違いに低いの
が現状である。PEEMの空間分解能および像質が改善
されるならば、表面科学への貢献度は今後飛躍的に向上
することが期待される。
However, the spatial resolution of PEEM is about several tens to several hundreds of nm, which is incomparably lower than that of a transmission electron microscope or a scanning electron microscope. If the spatial resolution and image quality of PEEM are improved, it is expected that the contribution to surface science will be dramatically improved in the future.

【0004】PEEMの空間分解能を決めている主要な
因子として、 (1)電子レンズの収差 (2)光電子の信号量 の2つが挙げられる。高い空間分解能を得るためにはレ
ンズの収差を小さく、光電子の信号量を大きくしなけれ
ばならない。電子レンズには電界型と磁界型の2種類が
あるが、いずれの場合においてもレンズの収差を小さく
するためには試料表面からレンズまでのギャップを出来
るだけ小さくする必要がある。ところが従来、光電子を
発生させるための紫外光はこのギャップの狭い空間を通
して照射するために、固体表面に対して比較的すれすれ
の入射角になってしまうという欠点が有った。この結
果、単位表面積当りに照射される紫外光の密度は小さく
なり、光電子の信号量が低下する。光電子の発生量を増
やすために照射角を大きくとるならば、ギャップを広げ
なければならず、その結果レンズの収差が増大してしま
う。このように上記(1),(2)項目は相い反する関
係にあり、両方を同時に満足できないことが、分解能を
向上させるうえでおおきな制約になっていた。
The two main factors that determine the spatial resolution of PEEM are (1) aberration of the electron lens and (2) signal quantity of photoelectrons. In order to obtain high spatial resolution, it is necessary to reduce the aberration of the lens and increase the amount of photoelectron signals. There are two types of electron lenses, an electric field type and a magnetic field type. In either case, in order to reduce the aberration of the lens, it is necessary to make the gap from the sample surface to the lens as small as possible. However, conventionally, the ultraviolet light for generating photoelectrons is radiated through the space having the narrow gap, so that there is a drawback that the incident angle becomes relatively grazing with respect to the solid surface. As a result, the density of ultraviolet light irradiated per unit surface area becomes small, and the signal amount of photoelectrons decreases. If the irradiation angle is increased in order to increase the amount of photoelectrons generated, the gap must be widened, resulting in an increase in lens aberration. As described above, the above items (1) and (2) have a contradictory relationship, and not satisfying both of them at the same time has been a major limitation in improving the resolution.

【0005】[0005]

【発明が解決しようとする課題】本発明は電子レンズと
試料間のギャップに制限されずに、十分大きな照射角で
紫外光を固体表面に照射することを可能にし、レンズ収
差を小さく抑えたうえで充分な光電子の信号量が得ら
れ、高い空間分解能が達成され得る電子顕微鏡装置を提
供することを目的とするものである。
The present invention makes it possible to irradiate a solid surface with ultraviolet light at a sufficiently large irradiation angle without being limited by the gap between the electron lens and the sample, and to suppress the lens aberration. It is an object of the present invention to provide an electron microscope device capable of obtaining a sufficient amount of photoelectron signals and achieving high spatial resolution.

【0006】[0006]

【課題を解決するための手段及び作用】上記目的を達成
するために本発明では、紫外光を固体表面に照射するこ
とによって発生する光電子を検出して、固体表面の像を
観察する電子顕微鏡装置において、該光電子を結像する
ための電子レンズあるいはアノードを構成する材料の少
なくとも一部が、紫外光を透過する性質を有することと
し、また、前記電子レンズあるいはアノードの少なくと
も一部が導電性の薄膜で被覆されていることとするもの
である。
In order to achieve the above object, the present invention uses an electron microscope apparatus for observing an image of a solid surface by detecting photoelectrons generated by irradiating the solid surface with ultraviolet light. In the above, at least a part of the material forming the electron lens or the anode for imaging the photoelectrons has a property of transmitting ultraviolet light, and at least a part of the electron lens or the anode is made of a conductive material. It is supposed to be covered with a thin film.

【0007】従来法の欠点として、金属材料からなる電
子レンズが遮蔽体となり、固体表面に高角度で紫外光を
照射できないことが挙げられる。そのため、固体表面へ
の紫外光の照射密度が低下してしまう。加えて、表面に
凹凸を有する試料の場合、紫外光の影の領域が形成され
ることも大きな欠点として挙げられる。
A drawback of the conventional method is that the electron lens made of a metal material serves as a shield so that the solid surface cannot be irradiated with ultraviolet light at a high angle. Therefore, the irradiation density of ultraviolet light on the solid surface is reduced. In addition, in the case of a sample having unevenness on the surface, formation of a shadow region of ultraviolet light is also a major drawback.

【0008】本発明によれば、少なくとも一部が紫外光
に対して透過率の高い物質で構成される電子レンズある
いはアノードを透過させて紫外光を固体表面に照射する
ことができる。これにより、固体表面と電子レンズのギ
ャップを小さくしても、紫外光を固体表面に高角度で照
射することができ、電子レンズの収差を小さくできると
ともに充分な光電子の信号量を得ることができる。
According to the present invention, it is possible to irradiate a solid surface with ultraviolet light by passing through an electron lens or an anode, at least a part of which is made of a substance having a high transmittance for ultraviolet light. As a result, even if the gap between the solid surface and the electron lens is made small, it is possible to irradiate the solid surface with ultraviolet light at a high angle, the aberration of the electron lens can be made small, and a sufficient amount of photoelectron signals can be obtained. .

【0009】[0009]

【実施例】図1に本発明の実施例を示す。1は直径10
mm、高さ30mmの円筒形状をもつ電子レンズであ
り、図2にその断面の拡大図を示す。電子レンズ1は石
英ガラス7の表面に透明導電体であるIn2O3(IT
O)膜8を厚さ約1μm被覆したものである。2は観察
対象である試料を示し、電子レンズ1から1mmのギャ
ップを隔てて、平行に位置している。3はハロゲンラン
プを光源とする紫外光の光線を表わしている。4は像を
形成するための蛍光体が塗られたガラスであり、試料表
面から約300mmに位置している。5は紫外光の導入
ポート、6は全体の環境を真空に保持するための真空容
器を表わしている。紫外光3の中心と固体表面2のなす
照射角を70度に設定すると、紫外光3は電子レンズ1
を透過して試料表面に収束される。上記の構成において
試料3としてSi基板上のAu膜を用い、真空容器6、
電子レンズ1をアースに接地し、該試料に−5kVを印
加したところ、蛍光板4に試料2の約300倍の拡大像
が得られた。この拡大像をASA感度400の35mm
フィルムを用いて撮影したところ、約20秒の露光時間
で良質な写真が得られた。
EXAMPLE FIG. 1 shows an example of the present invention. 1 is diameter 10
2 is an electron lens having a cylindrical shape with a height of 30 mm and a height of 30 mm, and FIG. 2 shows an enlarged view of its cross section. The electron lens 1 is a transparent conductor of In 2 O 3 (IT
O) The film 8 is coated with a thickness of about 1 μm. Reference numeral 2 denotes a sample to be observed, which is parallel to the electron lens 1 with a gap of 1 mm. Reference numeral 3 represents a ray of ultraviolet light having a halogen lamp as a light source. Reference numeral 4 is a glass coated with a phosphor for forming an image, and is located approximately 300 mm from the sample surface. Reference numeral 5 represents an ultraviolet light introduction port, and 6 represents a vacuum container for keeping the entire environment in vacuum. When the irradiation angle formed by the center of the ultraviolet light 3 and the solid surface 2 is set to 70 degrees, the ultraviolet light 3 is emitted by the electron lens 1
And is focused on the sample surface. In the above configuration, an Au film on a Si substrate is used as the sample 3, and the vacuum container 6,
When the electron lens 1 was grounded and -5 kV was applied to the sample, a magnified image about 300 times as large as that of the sample 2 was obtained on the fluorescent plate 4. This magnified image is 35 mm with ASA sensitivity 400
When the film was photographed, a good quality photograph was obtained with an exposure time of about 20 seconds.

【0010】一方、紫外光3が電子レンズ1を透過せず
に試料2に入射するように3度の照射角に設定し、他の
条件を同一に保って実験を行った結果、蛍光板上の像は
目視さえ困難なほど暗く、またS/N比が悪かった。前
記と同様に写真撮影を行ったところ、20分の露光時間
でも充分な像は得られなかった。さらに、このようにす
れすれの角度から紫外光を照射すると、試料表面に凹凸
がある場合に影が形成されるため、表面全体からの情報
が得られないことが確認された。
On the other hand, as a result of performing an experiment under the condition that the irradiation angle of 3 degrees is set so that the ultraviolet light 3 does not pass through the electron lens 1 and enters the sample 2, and the other conditions are kept the same, The image was so dark that it was difficult to even see it, and the S / N ratio was poor. When a photograph was taken in the same manner as described above, a sufficient image could not be obtained even with an exposure time of 20 minutes. Furthermore, it was confirmed that when the ultraviolet light was irradiated from such a grazing angle, a shadow was formed when the sample surface had irregularities, and thus information from the entire surface could not be obtained.

【0011】本実施例では一段レンズの構成をとった
が、2段あるいは3段など複数のレンズ構成をとるなら
ば、さらに高い倍率と分解能が得られることは言うまで
もない。
In this embodiment, the single-stage lens structure is adopted, but it goes without saying that a higher magnification and resolution can be obtained if a plurality of lens structures such as two or three stages are adopted.

【0012】[0012]

【発明の効果】本発明により、光電子顕微鏡(PEE
M)において電子レンズの性能を損なうことなく充分な
光電子の信号量が得られるため、高い空間分解能を有す
るとともに良質な像形成が達成される。
According to the present invention, a photoelectron microscope (PEE) is used.
In M), a sufficient amount of photoelectron signals can be obtained without impairing the performance of the electron lens, so that high spatial resolution and high quality image formation can be achieved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の電子顕微鏡装置の一例を示す概略構成
図である。
FIG. 1 is a schematic configuration diagram showing an example of an electron microscope apparatus of the present invention.

【図2】本発明に係る電子レンズの一例を示す断面図で
ある。
FIG. 2 is a sectional view showing an example of an electron lens according to the present invention.

【符号の説明】[Explanation of symbols]

1 円筒形電子レンズ 2 観察試料 3 紫外光の光線 4 蛍光板 5 紫外光導入ポート 6 真空容器 7 石英ガラス 8 ITO膜 DESCRIPTION OF SYMBOLS 1 Cylindrical electron lens 2 Observation sample 3 Ray of ultraviolet light 4 Fluorescent plate 5 Ultraviolet light introduction port 6 Vacuum container 7 Quartz glass 8 ITO film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 紫外光を固体表面に照射することによっ
て発生する光電子を検出して、固体表面の像を観察する
電子顕微鏡装置において、該光電子を結像するための電
子レンズあるいはアノードを構成する材料の少なくとも
一部が、紫外光を透過する性質を有することを特徴とし
た電子顕微鏡装置。
1. In an electron microscope apparatus for observing an image of a solid surface by detecting photoelectrons generated by irradiating a solid surface with ultraviolet light, an electron lens or an anode for forming the photoelectron is constituted. An electron microscope apparatus, wherein at least a part of the material has a property of transmitting ultraviolet light.
【請求項2】 電子レンズあるいはアノードの少なくと
も一部が導電性の薄膜で被覆されていることを特徴とし
た請求項1に記載の電子顕微鏡装置。
2. The electron microscope apparatus according to claim 1, wherein at least a part of the electron lens or the anode is covered with a conductive thin film.
JP19991193A 1993-07-20 1993-07-20 Electron microscope equipment Withdrawn JPH0735985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19991193A JPH0735985A (en) 1993-07-20 1993-07-20 Electron microscope equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19991193A JPH0735985A (en) 1993-07-20 1993-07-20 Electron microscope equipment

Publications (1)

Publication Number Publication Date
JPH0735985A true JPH0735985A (en) 1995-02-07

Family

ID=16415659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19991193A Withdrawn JPH0735985A (en) 1993-07-20 1993-07-20 Electron microscope equipment

Country Status (1)

Country Link
JP (1) JPH0735985A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116504604A (en) * 2023-05-10 2023-07-28 长三角先进材料研究院 An electron lens and an electron energy analyzer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116504604A (en) * 2023-05-10 2023-07-28 长三角先进材料研究院 An electron lens and an electron energy analyzer

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Effective date: 20001003