JPH073879B2 - Solar cell - Google Patents

Solar cell

Info

Publication number
JPH073879B2
JPH073879B2 JP2019025A JP1902590A JPH073879B2 JP H073879 B2 JPH073879 B2 JP H073879B2 JP 2019025 A JP2019025 A JP 2019025A JP 1902590 A JP1902590 A JP 1902590A JP H073879 B2 JPH073879 B2 JP H073879B2
Authority
JP
Japan
Prior art keywords
substrate
regions
grooves
groove
shows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2019025A
Other languages
Japanese (ja)
Other versions
JPH03225876A (en
Inventor
強志 上松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2019025A priority Critical patent/JPH073879B2/en
Publication of JPH03225876A publication Critical patent/JPH03225876A/en
Publication of JPH073879B2 publication Critical patent/JPH073879B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、コルゲート型基板を用いた太陽電池に関す
る。
The present invention relates to a solar cell using a corrugated substrate.

〔従来の技術〕[Conventional technology]

従来は、「The Conference Record of the 20th IEEE P
hotovoltaic specialists conference 1988 pp.792-79
5」に示す様に基板の2つの主表面に形成されたV溝が
同一方向を向いていたためそれと直角にクロスビームを
設けて機械的強度を高めていた。
Previously, `` The Conference Record of the 20th IEEE P
hotovoltaic specialists conference 1988 pp.792-79
As shown in "5", the V-grooves formed on the two main surfaces of the substrate were oriented in the same direction, so a cross beam was provided at a right angle to the V-grooves to enhance the mechanical strength.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

上記の様に、従来はクロスビームを付加することにより
該素子の強度を高めていたが、素子特性の向上のために
はクロスビームの面積を大きくすることが出来ないた
め、十分な機械的強度を得ることが困難であった。
As described above, conventionally, the strength of the element was increased by adding a cross beam, but since the area of the cross beam cannot be increased to improve the element characteristics, sufficient mechanical strength can be obtained. Was difficult to obtain.

本発明の目的は、素子特性を劣化させることなく、コル
ゲート型基板の機械的強度を高めることにある。
An object of the present invention is to increase the mechanical strength of a corrugated substrate without deteriorating the device characteristics.

〔課題を解決するための手段〕[Means for Solving the Problems]

上記目的を達成するため、本発明では、該基板の2つの
主表面に形成された複数のV溝の方向の少くとも一部
が、他と異なる方向を有する構造とした。
In order to achieve the above object, the present invention has a structure in which at least some of the directions of the plurality of V-shaped grooves formed on the two main surfaces of the substrate have directions different from the other directions.

〔作用〕 図面を用いて上記手段を説明する。[Operation] The above means will be described with reference to the drawings.

従来のコルゲート型基板は、第2図に示すように、V溝
20に直交したクロスビーム100を設けることにより同図
A−A′方向にかかる応力に対する機械的強度を保って
いた。この構造を用いて強度を高めるためにはクロスビ
ーム100の面積を大きくする必要がある。しかし、B−
B′断面図から判るようにクロスビームの部分の基板厚
は他の部分に比べて大きくなっているためこの面積が多
くなると基板の平均の厚みを薄く保つことが出来なくな
り、その結果素子特性(出力電圧)が劣化する。
As shown in FIG. 2, the conventional corrugated substrate has a V groove.
By providing the cross beam 100 orthogonal to 20, the mechanical strength with respect to the stress applied in the AA 'direction in the figure is maintained. In order to increase the strength using this structure, it is necessary to increase the area of the cross beam 100. However, B-
As can be seen from the B ′ cross-sectional view, the substrate thickness at the cross beam portion is larger than that at other portions, so that if this area increases, the average thickness of the substrate cannot be kept thin, and as a result, the device characteristics ( Output voltage) deteriorates.

上記の問題点を解決するために、V溝を有する領域を細
分化し、例えば第1図に示す構造とした。この構造では
該基板の主表面を大小二つの正方形に分けている。この
うち大きい方の正方形は例えば図中の領域1,2,3をX軸
に平行なV溝を持つ領域に、領域11,12をY軸に平行な
V溝を持つ領域とする。これにより、例えば該基板の主
表面をY軸に平行に横断するいかなる直線上において
も、必ずX軸に平行なV溝を持つ領域が存在する。ま
た、X軸に平行に横断する直線においても必ずY軸に平
行なV溝を持つ領域が存在する。これにより該基板の主
表面に対してX軸、またはY軸に平行な方向に応力が加
わった場合にも該基板の機械的強度は十分に大きく保つ
ことが出来る。
In order to solve the above problems, the region having the V groove is subdivided into the structure shown in FIG. 1, for example. In this structure, the main surface of the substrate is divided into large and small squares. In the larger square, for example, areas 1, 2, and 3 in the drawing are areas having V grooves parallel to the X axis, and areas 11 and 12 are areas having V grooves parallel to the Y axis. Thereby, for example, on any straight line that crosses the main surface of the substrate in parallel with the Y axis, there is always a region having a V groove parallel to the X axis. In addition, even in a straight line crossing parallel to the X axis, there is always a region having a V groove parallel to the Y axis. Thereby, even when stress is applied to the main surface of the substrate in a direction parallel to the X axis or the Y axis, the mechanical strength of the substrate can be kept sufficiently large.

上記の説明では各々の領域の最少の繰り返しパターンに
ついて説明したが、このパターンで該基板の主な部分を
覆う必要があることは言うまでもない。また、同図の領
域2,11および3,12をそれぞれX軸およびY軸に平行なV
溝をもつ領域としても同様のことが言える。また、小さ
い正方形の部分はいかなる規則によってX軸またはY軸
に平行なV溝を持つ領域に分けられていてもよい。更
に、上記説明におけるX軸,Y軸に平行なV溝は同図の
Y′軸の様な斜めに走る方向を向いていてもよい。
Although the above description has described the minimum repeating pattern in each region, it goes without saying that it is necessary to cover the main part of the substrate with this pattern. In addition, regions 2, 11 and 3, 12 in the figure are respectively V-parallel to the X-axis and Y-axis.
The same can be said for a region having a groove. Further, the small square portion may be divided into regions having V grooves parallel to the X axis or the Y axis by any rule. Further, the V-grooves parallel to the X-axis and the Y-axis in the above description may be oriented in a diagonal direction such as the Y'-axis in the figure.

ここで最も重要なことは、該基板の主表面を横断する任
意の直線上に少なくとも一ヶ所の該直線に実質的に平行
でないV溝を持つ領域が存在する事である。
Most importantly, there is at least one region having a V-groove that is not substantially parallel to the straight line on any straight line across the main surface of the substrate.

以下に本発明の応用例を示す。The application examples of the present invention are shown below.

第3図に長方形と正方形を用いた例を示す。この例で
は、例えば領域1,2,3,4,5と領域11,12,13,14をそれぞれ
異なった方向のV溝を持つ領域とする事により上記目的
が達せられる。
FIG. 3 shows an example using a rectangle and a square. In this example, for example, the regions 1, 2, 3, 4, 5 and the regions 11, 12, 13, 14 are regions having V grooves in different directions to achieve the above object.

第4図にはL字型を用いた例を示す。この例では、例え
ば領域1,2,3・・・と領域11,12,13・・・をそれぞれ異
なった方向のV溝を持つ領域とする事により上記目的が
達せられる。
FIG. 4 shows an example using the L-shape. In this example, for example, the regions 1, 2, 3, ... And the regions 11, 12, 13, ... Are regions having V grooves in different directions to achieve the above object.

第5図には長方形のみを用いた例を示す。この例では、
例えば領域1,2,3・・・と領域11,12,13・・・をそれぞ
れ異なった方向のV溝を持つ領域とする事により上記目
的が達せられる。
FIG. 5 shows an example using only a rectangle. In this example,
For example, the above-mentioned object can be achieved by forming the regions 1, 2, 3, ... And the regions 11, 12, 13, ... With V grooves having different directions.

第6図にはT字型を用いた例を示す。この例では、例え
ば領域1,2,3・・・と領域11,12・・・をそれぞれ異なっ
た方向のV溝を持つ領域とする事により上記目的が達せ
られる。
FIG. 6 shows an example using a T-shape. In this example, for example, the regions 1, 2, 3, ... And the regions 11, 12, ... Are regions having V grooves in different directions to achieve the above object.

第7図には十字型を用いた例を示す。この例では、例え
ば領域1,2・・・と領域11,12・・・をそれぞれ異なった
方向のV溝を持つ領域とする事により上記目的が達せら
れる。
FIG. 7 shows an example using a cross shape. In this example, for example, the regions 1, 2, ... And the regions 11, 12, ... Are regions having V grooves in different directions to achieve the above object.

第8図には鍵型を用いた例を示す。この例では、例えば
領域1,2・・・と領域11,12・・・をそれぞれ異なった方
向のV溝を持つ領域とする事により上記目的が達せられ
る。
FIG. 8 shows an example using a key type. In this example, for example, the regions 1, 2, ... And the regions 11, 12, ... Are regions having V grooves in different directions to achieve the above object.

次に、第9図を用いて他の例を示す。この例では該基板
の主な領域1はY軸に平行なV溝を持ち、領域2はX軸
に平行なV溝を持つ。この様な構造によっても上記目的
を達成することが出来ることは明らかである。
Next, another example will be described with reference to FIG. In this example, the main region 1 of the substrate has V-grooves parallel to the Y-axis and region 2 has V-grooves parallel to the X-axis. It is obvious that the above object can be achieved by such a structure.

第10図に第9図で説明した例の応用を示す。この例では
第9図での領域2の形状が本図の領域2,3,4の様な形状
に置き変わっている。
FIG. 10 shows an application of the example explained in FIG. In this example, the shape of the area 2 in FIG. 9 is replaced with the shape of the areas 2, 3 and 4 in this figure.

これまで種々の例を挙げて説明したが、該基板の主表面
を横断する直線上に少くとも一ヶ所の該直線に平行でな
いV溝を持つ領域が存在する事を満足する組合せならば
どのような組合せであっても本願発明の目的を達するこ
とができる。
Although various examples have been described so far, what is a combination satisfying that there is at least one region having a V groove that is not parallel to the straight line on the straight line crossing the main surface of the substrate? Even in any combination, the object of the present invention can be achieved.

更に、他の応用例として、第11図に該基板の主表面を4
つの部分に、例えば領域1,3,をX軸に平行なV溝を持つ
領域に、また領域2,4をY軸に平行なV溝を持つ領域に
分割した例を示す。この例においても例えば領域1,2と
領域3,4のV溝の方向を合わせたり、各々のV溝の方向
を入れ替えることにより種々の組合せを得ることが出来
る。
Furthermore, as another application example, the main surface of the substrate is shown in FIG.
In one example, regions 1, 3 are divided into regions having V grooves parallel to the X axis, and regions 2 and 4 are divided into regions having V grooves parallel to the Y axis. Also in this example, various combinations can be obtained by, for example, aligning the directions of the V-grooves of the regions 1 and 2 and the regions 3 and 4 or switching the directions of the respective V-grooves.

また、第12図に示すように該基板の主表面の領域を分割
し各々の領域のV溝の方向を組み合わせることも可能で
ある。
Further, as shown in FIG. 12, it is possible to divide the area of the main surface of the substrate and combine the directions of the V-grooves of the respective areas.

第11図や12図では該基板の主表面をこれら1個で覆うこ
とを考えたが、これらを複数個組み合わせて該基板の主
表面を覆ってもよい。
Although it is considered in FIGS. 11 and 12 that the main surface of the substrate is covered with one of these, a plurality of these may be combined to cover the main surface of the substrate.

これまでは、V溝について述べたが、これはU溝、矩形
溝等を用いて該コルゲート基板を薄型化している場合に
も有効であることは言うまでもない。また該基板がSiの
みならず、ガラス基板または、化合物半導体等から出来
ている場合も同様の事が言える。
So far, the V groove has been described, but it goes without saying that this is also effective when the corrugated substrate is thinned using a U groove, a rectangular groove, or the like. The same thing can be said when the substrate is made of not only Si but also a glass substrate or a compound semiconductor.

〔実施例〕〔Example〕

以下、本発明の実施例を第13図を用いて説明する。 An embodiment of the present invention will be described below with reference to FIG.

本実施例は第1図で説明した大小2種類で正方形の領域
から成る構造を用いている。各々の領域は図中に破線で
示した様に縦方向および横方向のV溝を持つ領域に分か
れている。大きい正方形の一辺aは20mm、小さい正方形
の一辺bは10mmとした。また、各々の領域の境界では、
V溝は拡大図に示すように交わっており、V溝のピッチ
eは240μmとした。基板には(100)表面を持つ250μ
m厚のSi単結晶基板を用い、この表面及び裏面に通常の
熱酸化法により1000Å厚の酸化膜を形成し、表面の酸化
膜をホト工程により各々同図の破線で示した方向に20μ
m幅を持つ細線に加工した。この詳細を同図の拡大図の
実線で示す。裏面の酸化膜は表面の細線パターンに対し
半周期ずらして、表面と同様に形成した。この酸化膜を
エッチングマスクに用い、ビドラジン溶液によりSiを異
方性エッチングし第2図AA′断面に示す様なコルゲート
断面を形成した。これにより基板厚tは50μmとなる。
In this embodiment, the structure composed of square areas of two types, large and small, described in FIG. 1 is used. Each area is divided into areas having V-grooves in the vertical direction and the horizontal direction as shown by the broken lines in the figure. The side a of the large square is 20 mm, and the side b of the small square is 10 mm. Also, at the boundary of each area,
The V grooves intersect as shown in the enlarged view, and the pitch e of the V grooves is 240 μm. 250μ with (100) surface on the substrate
Using an m-thick Si single crystal substrate, a 1000 Å-thick oxide film is formed on the front and back surfaces by a normal thermal oxidation method.
It was processed into a thin wire with m width. This detail is shown by the solid line in the enlarged view of FIG. The oxide film on the back surface was formed in the same manner as the front surface, with a shift of a half cycle from the fine line pattern on the front surface. Using this oxide film as an etching mask, Si was anisotropically etched with a vidrazine solution to form a corrugated section as shown in the section AA 'in FIG. As a result, the substrate thickness t becomes 50 μm.

第13図から判るように、縦方向の溝を持つ領域と、横方
向の溝を持つ領域を組み合せることにより、素子のどの
断面も必ず縦のV溝と横のV溝を含むため、素子の作
製、取扱いにおける衝撃や、装置に組み込んだ後にかか
る応力に対して非常に高い強度を保つ事が出来た。本実
施例では、V溝を異方性エッチングにより形成する方法
について述べたが、これをダイシングなどの機械加工
や、レーザスクライブ加工を用いてもよい。この場合に
は異方性エッチを用いないため(100)表面以外を持つ
ウエハーを用いてよい。またV溝のかわりにU溝やその
他の断面形状としていてもよい。また、本実施例ではSi
結晶基板について述べたが、該基板は、Si結晶に限ら
ず、GaAsやInP等の化合物半導体や、Ge結晶等でもよ
い。またこれらは単結晶に限らず、多結晶基板であって
もよい。さらに、ガラスやセラミック基板上に単結晶,
多結晶,微結晶またはアモルファス状の光電変換層を形
成した構造において、該基板を本発明の構造とすること
により、該基板を薄くしても強度を高くすることが出来
る。
As can be seen from FIG. 13, by combining a region having a vertical groove and a region having a horizontal groove, every cross section of the device always includes a vertical V groove and a horizontal V groove. It was possible to maintain extremely high strength against shocks during the manufacture and handling of and the stress applied after it was incorporated into the device. In this embodiment, the method of forming the V groove by anisotropic etching has been described, but this may be machined by dicing or laser scribing. In this case, since anisotropic etching is not used, a wafer having a surface other than (100) may be used. Also, instead of the V groove, a U groove or other cross-sectional shape may be used. In addition, in this embodiment, Si
Although the crystal substrate has been described, the substrate is not limited to the Si crystal, and may be a compound semiconductor such as GaAs or InP or a Ge crystal. Further, these are not limited to single crystals, and may be polycrystalline substrates. In addition, single crystal on glass or ceramic substrate,
In a structure in which a polycrystalline, microcrystalline, or amorphous photoelectric conversion layer is formed, the substrate having the structure of the present invention can have high strength even when the substrate is thin.

〔発明の効果〕〔The invention's effect〕

非常に薄い基板を用いて比較的大きな面積の太陽電池を
作製する場合に、一方向のV溝を持つコルゲート構造で
は特定の方向の機械強度が十分でなかった。しかし、本
発明の構造を採用することにより該太陽電池の機械強度
が全ての方向からの応力に対して非常に高くなった。
When a solar cell having a relatively large area is manufactured using a very thin substrate, a corrugated structure having a V-shaped groove in one direction does not have sufficient mechanical strength in a specific direction. However, by adopting the structure of the present invention, the mechanical strength of the solar cell became extremely high against stress from all directions.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の構造の一例。第2図は従来の構造の一
例。第3図は本発明の構造の一例。第4図は本発明の構
造の一例。第5図は本発明の構造の一例。第6図は本発
明の構造の一例。第7図は本発明の構造の一例。第8図
は本発明の構造の一例。第9図は本発明の構造の一例。
第10図は本発明の構造の一例。第11図は本発明の構造の
一例。第12図は本発明の構造の一例。第13図は本発明の
一実施例。 符号の説明 1,2,3,4,5,6,11,12,13,14…V溝形成領域、20…V溝、1
00…クロスビーム。
FIG. 1 shows an example of the structure of the present invention. FIG. 2 shows an example of a conventional structure. FIG. 3 shows an example of the structure of the present invention. FIG. 4 shows an example of the structure of the present invention. FIG. 5 shows an example of the structure of the present invention. FIG. 6 shows an example of the structure of the present invention. FIG. 7 shows an example of the structure of the present invention. FIG. 8 shows an example of the structure of the present invention. FIG. 9 shows an example of the structure of the present invention.
FIG. 10 shows an example of the structure of the present invention. FIG. 11 shows an example of the structure of the present invention. FIG. 12 shows an example of the structure of the present invention. FIG. 13 shows an embodiment of the present invention. Explanation of reference numerals 1,2,3,4,5,6,11,12,13,14 ... V groove forming region, 20 ... V groove, 1
00 ... Cross beam.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】コルゲート型Si単結晶基板を有する太陽電
池において、上記コルゲートは上記Si単結晶基板の表面
および裏面の所望の領域に互いに直交する2種類の方向
の直線状V溝が同一ピッチで形成された構成となってお
り、上記2種類の方向の直線状V溝は一方の直線状V溝
の延長上に他方の直線状V溝のみから成る領域が存在す
るように配置されていることを特徴とする太陽電池。
1. A solar cell having a corrugated Si single crystal substrate, wherein the corrugation has linear V-grooves in two kinds of directions orthogonal to each other on a desired region of the front surface and the back surface of the Si single crystal substrate at the same pitch. The linear V-grooves in the two directions described above are arranged so that an area consisting of only the other linear V-groove exists on the extension of one linear V-groove. A solar cell characterized by.
JP2019025A 1990-01-31 1990-01-31 Solar cell Expired - Fee Related JPH073879B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019025A JPH073879B2 (en) 1990-01-31 1990-01-31 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019025A JPH073879B2 (en) 1990-01-31 1990-01-31 Solar cell

Publications (2)

Publication Number Publication Date
JPH03225876A JPH03225876A (en) 1991-10-04
JPH073879B2 true JPH073879B2 (en) 1995-01-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019025A Expired - Fee Related JPH073879B2 (en) 1990-01-31 1990-01-31 Solar cell

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Country Link
JP (1) JPH073879B2 (en)

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CN102164845A (en) 2008-09-30 2011-08-24 Nxp股份有限公司 Robust high aspect ratio semiconductor device

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