JPH0748117A - Porous silica sol and its production - Google Patents
Porous silica sol and its productionInfo
- Publication number
- JPH0748117A JPH0748117A JP5196534A JP19653493A JPH0748117A JP H0748117 A JPH0748117 A JP H0748117A JP 5196534 A JP5196534 A JP 5196534A JP 19653493 A JP19653493 A JP 19653493A JP H0748117 A JPH0748117 A JP H0748117A
- Authority
- JP
- Japan
- Prior art keywords
- porous silica
- silica sol
- refractive index
- ammonia
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 17
- -1 silicon alkoxide Chemical class 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000002245 particle Substances 0.000 claims abstract description 12
- 230000003301 hydrolyzing effect Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 abstract description 14
- 239000000945 filler Substances 0.000 abstract description 10
- 238000000576 coating method Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 229910001610 cryolite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- MGQFVQQCNPBJKC-UHFFFAOYSA-N dibutoxy(diethyl)silane Chemical compound CCCCO[Si](CC)(CC)OCCCC MGQFVQQCNPBJKC-UHFFFAOYSA-N 0.000 description 1
- GQNWJCQWBFHQAO-UHFFFAOYSA-N dibutoxy(dimethyl)silane Chemical compound CCCCO[Si](C)(C)OCCCC GQNWJCQWBFHQAO-UHFFFAOYSA-N 0.000 description 1
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 1
- UJTGYJODGVUOGO-UHFFFAOYSA-N diethoxy-methyl-propylsilane Chemical compound CCC[Si](C)(OCC)OCC UJTGYJODGVUOGO-UHFFFAOYSA-N 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- BZCJJERBERAQKQ-UHFFFAOYSA-N diethyl(dipropoxy)silane Chemical compound CCCO[Si](CC)(CC)OCCC BZCJJERBERAQKQ-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- SACPKRUZWRIEBW-UHFFFAOYSA-N dipropoxysilane Chemical compound CCCO[SiH2]OCCC SACPKRUZWRIEBW-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- KUCGHDUQOVVQED-UHFFFAOYSA-N ethyl(tripropoxy)silane Chemical compound CCCO[Si](CC)(OCCC)OCCC KUCGHDUQOVVQED-UHFFFAOYSA-N 0.000 description 1
- HTSRFYSEWIPFNI-UHFFFAOYSA-N ethyl-dimethoxy-methylsilane Chemical compound CC[Si](C)(OC)OC HTSRFYSEWIPFNI-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- GIHPVQDFBJMUAO-UHFFFAOYSA-N tributoxy(ethyl)silane Chemical compound CCCCO[Si](CC)(OCCCC)OCCCC GIHPVQDFBJMUAO-UHFFFAOYSA-N 0.000 description 1
- GYZQBXUDWTVJDF-UHFFFAOYSA-N tributoxy(methyl)silane Chemical compound CCCCO[Si](C)(OCCCC)OCCCC GYZQBXUDWTVJDF-UHFFFAOYSA-N 0.000 description 1
- WAAWAIHPWOJHJJ-UHFFFAOYSA-N tributoxy(propyl)silane Chemical compound CCCCO[Si](CCC)(OCCCC)OCCCC WAAWAIHPWOJHJJ-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- VUWVDNLZJXLQPT-UHFFFAOYSA-N tripropoxy(propyl)silane Chemical compound CCCO[Si](CCC)(OCCC)OCCC VUWVDNLZJXLQPT-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Surface Treatment Of Optical Elements (AREA)
- Silicon Compounds (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、光学材料における反射
防止膜形成用の低屈折率フィラーとして用いられる多孔
質シリカゾルとその製法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a porous silica sol used as a low refractive index filler for forming an antireflection film in an optical material and a method for producing the same.
【0002】[0002]
【従来の技術】近年、光は通信系や計測系などにおける
媒体として利用されている。ところが、レンズなどの表
面から光の反射による光パワーの損失が起こったり、反
射光が誤信号として出力され、各種機器の誤作動の原因
となっていた。また、前記反射光によって、ディスプレ
ー装置の表示面、前記ディスプレー装置の表面カバー材
料、TVブラウン管の表示面、タッチパネル、液晶表示
装置の表示面、陰極線管の前面映像面などの映像関連機
器、この他にも、絵画の前面ガラス、窓ガラス、ショー
ケースのガラス、時計や計器のカバーガラスへの映り込
みが起こり、これが問題となっていた。2. Description of the Related Art In recent years, light has been used as a medium in communication systems and measurement systems. However, the loss of optical power due to the reflection of light from the surface of a lens or the like, or the reflected light being output as an erroneous signal has caused various devices to malfunction. In addition, depending on the reflected light, image-related equipment such as a display surface of a display device, a surface cover material of the display device, a display surface of a TV Braun tube, a touch panel, a display surface of a liquid crystal display device, a front image surface of a cathode ray tube, and the like. However, the reflection on the front glass of the painting, the window glass, the glass of the showcase, the cover glass of the clock and the instrument occurred, which was a problem.
【0003】そこで、真空蒸着法、スパッタリング法、
イオンプレーティング法およびCVD法により、前記映
像機器、各種ガラスの表面に、単層または多層からなる
反射防止膜を形成させ、反射光を防止している。ところ
が、前記の方法はいずれもかなり高価な膜付け法であ
り、また装置の制約上、基材の大きさが限定され、さら
に基材面に凸凹がある場合などには均一な膜付けができ
ないなどの問題があった。特に、真空蒸着法では、反射
防止膜の膜強度を長期使用に耐えうるだけ十分強くする
には、基材を300℃以上にしなければならず、スパッ
タリング法では装置費が非常に高価であるといった問題
がある。Therefore, the vacuum deposition method, the sputtering method,
By the ion plating method and the CVD method, a single-layer or multi-layer antireflection film is formed on the surface of the video equipment and various glasses to prevent reflected light. However, each of the above methods is a very expensive film forming method, and the size of the base material is limited due to the limitation of the device. Further, when the base material surface has irregularities, uniform film formation cannot be performed. There was such a problem. In particular, in the vacuum vapor deposition method, in order to make the film strength of the antireflection film strong enough to withstand long-term use, the base material must be 300 ° C. or higher, and in the sputtering method, the equipment cost is very high. There's a problem.
【0004】そこで、前記問題の対策として、前記処理
方法に代わって、塗布方法によって反射防止膜を形成で
きれば、基材の大きさの制限、処理温度の制限、膨張係
数の問題は、バインダーを選定することによって対処で
きるので、非常に有望視されている。Therefore, as a countermeasure against the above-mentioned problem, if an antireflection film can be formed by a coating method instead of the above-mentioned processing method, a binder is selected for the problems of the size of the base material, the processing temperature and the expansion coefficient. It is very promising because it can be dealt with.
【0005】ところで、光学材料、特にレンズやガラス
などにおいては、反射防止膜の屈折率が1.45以下で
ないと、反射防止効果が弱く、現在知られているものの
中で、バインダー単体の屈折率が1.45以下のもの
は、ポリテトラフルオロエチレンのみである。ところ
が、この材料は付着性が悪く、材質が柔らかく、高温処
理が必要であり、さらに非常に高価であることから反射
防止膜形成用塗布液用のバインダーとしては不適とされ
ている。By the way, in optical materials, especially lenses and glass, unless the refractive index of the antireflection film is 1.45 or less, the antireflection effect is weak. Those having a value of 1.45 or less are only polytetrafluoroethylene. However, this material is not suitable as a binder for a coating liquid for forming an antireflection film because it has poor adhesion, is soft, requires high temperature treatment, and is very expensive.
【0006】この他のバインダーでは、屈折率が1.4
5を越えてしまい、屈折率1.45以下の反射防止膜を
得るためには、屈折率が1.45以下の低屈折率フィラ
ーをバインダー中に分散させる必要がある。屈折率が
1.45以下の低屈折率フィラーとしては、屈折率1.
35の氷晶石があり、これを分散させればよいことが推
察される。ところで、反射防止膜の屈折率が基材の屈折
率の平方根に等しいとき、反射率が0%となることは公
知である。ところが、一般的に用いられる基材である青
板ガラスへの反射防止膜では、反射防止膜の屈折率が
1.22のときに、反射率が0%になる。よって、バイ
ンダーに添加する低屈折率フィラーとしては、氷晶石よ
りも低屈折率材料が好ましいが、現在前記条件を満たす
材料は存在しないとされている。Other binders have a refractive index of 1.4.
In order to obtain an antireflection film having a refractive index of 1.45 or less, a low refractive index filler having a refractive index of 1.45 or less needs to be dispersed in the binder. As the low refractive index filler having a refractive index of 1.45 or less, a refractive index of 1.
There are 35 cryolites, and it is speculated that this should be dispersed. By the way, it is known that the reflectance becomes 0% when the refractive index of the antireflection film is equal to the square root of the refractive index of the substrate. However, in the antireflection film for soda lime glass, which is a commonly used substrate, the reflectance is 0% when the refractive index of the antireflection film is 1.22. Therefore, as the low-refractive-index filler added to the binder, a low-refractive-index material is preferable to cryolite, but it is said that no material currently satisfies the above conditions.
【0007】そこで、低屈折率化の手段として、低屈折
率材料を多孔質化させることにより、このものが原材料
よりも低屈折率を示すことを知見し、このものとして、
多孔質化させたシリカ(多孔質シリカ)が使用できるこ
とを見い出した。ところが、従来の多孔質シリカは、高
分子、あるいは高沸点溶媒を添加し、シリカゲルを調整
した後、高温で有機物を除去して多孔質化を計るため、
粒子径が0.5μm以上となり、塗料化しても十分に透
明な膜を得ることができないなどの問題があった。Therefore, as a means for lowering the refractive index, it was found that by making the low refractive index material porous, this material exhibits a lower refractive index than the raw material.
It has been found that silica that has been made porous (porous silica) can be used. However, conventional porous silica is a polymer, or a high-boiling solvent is added, and after adjusting the silica gel, in order to measure the porosity by removing organic matter at high temperature,
The particle diameter was 0.5 μm or more, and there was a problem that a sufficiently transparent film could not be obtained even if it was made into a paint.
【0008】[0008]
【発明が解決しようとする課題】本発明は、これらの事
情に鑑みてなされたものであって、光学材料における反
射防止膜形成用の低屈折率フィラーとして用いられる、
多孔質シリカゾルおよびその製法を提供することを目的
としている。The present invention has been made in view of these circumstances, and is used as a low refractive index filler for forming an antireflection film in an optical material,
It is intended to provide a porous silica sol and a method for producing the same.
【0009】[0009]
【課題を解決するための手段】かかる目的は、平均粒子
径が0.3〜100nmの範囲にあり、かつ、屈折率が
1.2〜1.4である多孔質シリカゾルを、低屈折率フ
ィラーとして用いることで解決される。そして、この多
孔質シリカゾルは、シリコンのアルコキシドをアンモニ
アで加水分解した後、アンモニアを除去することで生成
できる。The object of the present invention is to provide a porous silica sol having an average particle size of 0.3 to 100 nm and a refractive index of 1.2 to 1.4 with a low refractive index filler. It is solved by using as. The porous silica sol can be produced by hydrolyzing the silicon alkoxide with ammonia and then removing the ammonia.
【0010】[0010]
【作用】シリコンのアルコキシドを用い、これとアンモ
ニア水とを混合し、シリコンのアルコキシドを加水分解
することにより、高度に絡み合って枝別れしたポリマー
状の多孔質シリカゾルを生成することができる。By using a silicon alkoxide and mixing it with aqueous ammonia to hydrolyze the silicon alkoxide, a highly entangled and branched polymeric porous silica sol can be produced.
【0011】[0011]
【実施例】次に、本発明の多孔質シリカゾルの製法につ
いて詳しく説明する。本発明で使用される、シリコンの
アルコキシドとしては、アルキルアルコキシシランまた
はカーボンファンクショナルポリオルガノシロキサンが
用いられる。アルキルアルコキシシランの具体例として
は、テトラメトキシシラン、テトラエトキシシラン、テ
トラプロポキシシラン、テトラブトキシシラン、メチル
トリメトキシシラン、メチルトリエトキシシラン、メチ
ルトリプロポキシシラン、メチルトリブトキシシラン、
エチルトリメトキシシラン、エチルトリエトキシシラ
ン、エチルトリプロポキシシラン、エチルトリブトキシ
シラン、プロピルトリメトキシシラン、プロピルトリエ
トキシシラン、プロピルトリプロポキシシラン、プロピ
ルトリブトキシシラン、ジメチルジメトキシシラン、ジ
メチルジエトキシシラン、ジメチルジプロポキシシラ
ン、ジメチルジブトキシシラン、ジエチルジメトキシシ
ラン、ジエチルジエトキシシラン、ジエチルジプロポキ
シシラン、ジエチルジブトキシシラン、メチルエチルジ
メトキシシラン、メチルプロピルジエトキシシランなど
がある。EXAMPLES Next, the method for producing the porous silica sol of the present invention will be described in detail. As the silicon alkoxide used in the present invention, an alkylalkoxysilane or a carbon functional polyorganosiloxane is used. Specific examples of the alkylalkoxysilane, tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetrabutoxysilane, methyltrimethoxysilane, methyltriethoxysilane, methyltripropoxysilane, methyltributoxysilane,
Ethyltrimethoxysilane, ethyltriethoxysilane, ethyltripropoxysilane, ethyltributoxysilane, propyltrimethoxysilane, propyltriethoxysilane, propyltripropoxysilane, propyltributoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, dimethyl Examples include dipropoxysilane, dimethyldibutoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, diethyldipropoxysilane, diethyldibutoxysilane, methylethyldimethoxysilane, and methylpropyldiethoxysilane.
【0012】また、カーボンファンクショナルポリオル
ガノシロキサンとしては、3、4ーエポキシシクロヘキ
シルアルキルトリアルコキシシラン、メタクリロキシア
ルキルトリアルコキシシラン、ビニルトリアルコキシシ
ラン、γーグリシドキシアルキルアルコキシシラン、ア
ミノアルキルトリアルコキシシランなどがある。As the carbon functional polyorganosiloxane, 3,4-epoxycyclohexylalkyltrialkoxysilane, methacryloxyalkyltrialkoxysilane, vinyltrialkoxysilane, γ-glycidoxyalkylalkoxysilane and aminoalkyltrialkoxy are used. There is silane.
【0013】有機溶媒としては、水可溶性のものであれ
ばよく、アルコール類、ケトン類、エステル類、グリコ
ールエーテル類が用いられる。特に、メタノール、エタ
ノール、イソプロピルアルコール、ブチルアルコール、
nープロピルアルコールなどのアルコール類が好まし
い。Any organic solvent may be used as long as it is water-soluble, and alcohols, ketones, esters and glycol ethers are used. In particular, methanol, ethanol, isopropyl alcohol, butyl alcohol,
Alcohols such as n-propyl alcohol are preferred.
【0014】まず、シリカの原料として用意された前記
シリコンのアルコキシドを用い、前記有機溶媒と混合す
る。シリコンのアルコキシドは、単一種で用いてもよ
く、また二種以上の混合物としてもよい。ただし、前記
シリコンのアルコキシドの固形分の濃度としては、0.
5〜15重量%が好ましい。これは、0.5重量%未満
では経済性が悪く、コスト高になってしまい、また、1
5重量%以上では、シリコンのアルコキシドの加水分解
速度が速すぎるため、粒子径が急激に大きくなり、生成
された多孔質シリカゾルの安定性が悪いため、これが沈
降し、前記多孔質シリカゾルをバインダー中に分散させ
たものを反射防止膜形成用塗布液として使用して得られ
る反射防止膜にレイリー散乱が起こり、透明性が低下す
るからである。First, the silicon alkoxide prepared as a silica raw material is used and mixed with the organic solvent. The silicon alkoxide may be used alone or as a mixture of two or more kinds. However, the concentration of the solid content of the silicon alkoxide is 0.
5 to 15% by weight is preferable. If it is less than 0.5% by weight, the economy is poor and the cost is high.
When the content is 5% by weight or more, the hydrolysis rate of the silicon alkoxide is too fast, and the particle size suddenly increases, and the stability of the generated porous silica sol is poor. The reason for this is that Rayleigh scattering occurs in the antireflection film obtained by using the above dispersion as a coating liquid for forming the antireflection film, and the transparency is lowered.
【0015】ついで、前記有機溶媒と混合されたシリコ
ンのアルコキシドを攪拌しながら、アンモニア水を徐々
に滴下する。よって、シリコンのアルコキシドがアンモ
ニアによって加水分解され、酸性下での加水分解と異な
り、高度に絡み合って枝別れしたポリマー状の多孔質シ
リカゾルが生成される。また前記アンモニア濃度は、加
水分解時の溶液のpHが9〜11の範囲にあれば、任意
に設定できる。Then, ammonia water is gradually dropped while stirring the silicon alkoxide mixed with the organic solvent. Therefore, the alkoxide of silicon is hydrolyzed by ammonia, and unlike the hydrolysis under acidic conditions, a highly entangled and branched polymeric porous silica sol is produced. Further, the ammonia concentration can be arbitrarily set as long as the pH of the solution at the time of hydrolysis is in the range of 9 to 11.
【0016】また、前記多孔質シリカゾルには、水可溶
性の不純物としてアンモニアが混入しているので、これ
を除いておく必要がある。前記アンモニアは気化しやす
く、有機溶媒の沸点において還流するか、さらに、空気
または窒素ガスを送り込むことで除去できる。ついで、
生成された多孔質シリカゾルを有機溶媒で希釈すること
により、用途に合わせた濃度の多孔質シリカゾルが生成
される。また、前記多孔質シリカゾルを濃縮してもよ
い。Further, since ammonia is mixed as a water-soluble impurity in the porous silica sol, it is necessary to remove it. The ammonia is easily vaporized, and can be removed by refluxing at the boiling point of the organic solvent or by feeding air or nitrogen gas. Then,
By diluting the produced porous silica sol with an organic solvent, a porous silica sol having a concentration suitable for the application is produced. Further, the porous silica sol may be concentrated.
【0017】このような製法により、平均粒子径が0.
3〜100nmで、不純物のない多孔質シリカゾルが得
られる。また前記多孔性シリカゾルは、粒子内に空隙が
存在しているため低密度であり、通常のシリカの屈折率
が1.46であるのに比べ、前記多孔質シリカゾルの屈
折率は1.2〜1.4と、屈折率が著しく低下する。According to such a manufacturing method, the average particle size is 0.
From 3 to 100 nm, a porous silica sol free of impurities is obtained. Further, the porous silica sol has a low density due to the existence of voids in the particles, and the refractive index of the porous silica sol is 1.2 to 1 as compared with the refractive index of ordinary silica of 1.46. The refractive index significantly decreases to 1.4.
【0018】以上のように、本発明の多孔質シリカゾル
は、シリコンのアルコキシドをアンモニアで加水分解
し、ついでアンモニアを除去することによって、平均粒
子径が0.3〜100nmの範囲にあり、かつ、屈折率
が1.2〜1.4を示すものであるので、反射防止膜形
成用の低屈折率フィラーとして用いることができ、さら
にこれを使用した際に、優れた反射防止効果を持つ、反
射防止膜を作製することができる。As described above, the porous silica sol of the present invention has an average particle size in the range of 0.3 to 100 nm by hydrolyzing a silicon alkoxide with ammonia and then removing the ammonia, and Since it has a refractive index of 1.2 to 1.4, it can be used as a low refractive index filler for forming an antireflection film, and when it is used, it has an excellent antireflection effect. A preventive film can be prepared.
【0019】(実施例1)以下、具体例を示し、本発明
の効果を明らかにする。まず、テトラエトキシシラン1
00重量部に、エタノール730.8重量部を添加し、
攪拌した。ついで、これに、30重量%のアンモニア水
29.2重量部とエタノール100重量部の混合物を室
温にて滴下し、48時間攪拌して、多孔質シリカゾルを
生成した。(Embodiment 1) The effects of the present invention will be clarified by showing concrete examples below. First, tetraethoxysilane 1
730.8 parts by weight of ethanol was added to 00 parts by weight,
It was stirred. Then, a mixture of 29.2 parts by weight of 30% by weight aqueous ammonia and 100 parts by weight of ethanol was added dropwise thereto at room temperature and stirred for 48 hours to produce a porous silica sol.
【0020】ついで、エバポレーターによって、エタノ
ールおよびアンモニアを留去して、固形分10重量%の
多孔質シリカゾルを得た。このようにして生成された多
孔質シリカゾルの平均粒子径は約10nmであった。ま
た、屈折率については以下のようにして決定した。Then, ethanol and ammonia were distilled off by an evaporator to obtain a porous silica sol having a solid content of 10% by weight. The average particle size of the porous silica sol thus produced was about 10 nm. The refractive index was determined as follows.
【0021】このようにして得られた多孔質シリカゾル
とこの多孔質シリカゾルの分散可能なバインダー、例え
ばテトラメトキシシランの酸性条件下での加水分解物を
用い、種々の多孔質シリカ/バインダーの量比を変化さ
せて反射防止膜を作製した。そして、作製した反射防止
膜の屈折率と多孔性シリカ濃度の関係を求め、その関係
から多孔質シリカ100%の濃度に外挿して、多孔質シ
リカゾルの屈折率を決定した。その結果本実施例におけ
る多孔質シリカゾルの屈折率は1.25であった。Using the porous silica sol thus obtained and a dispersible binder of this porous silica sol, for example, a hydrolyzate of tetramethoxysilane under acidic conditions, various porous silica / binder ratios are used. Was changed to prepare an antireflection film. Then, the relationship between the refractive index of the produced antireflection film and the concentration of porous silica was determined, and from this relationship, the concentration of 100% porous silica was extrapolated to determine the refractive index of the porous silica sol. As a result, the refractive index of the porous silica sol in this example was 1.25.
【0022】(実施例2)テトラメトキシシラン73.
6重量部に、メタノール757.2重量部を添加し、攪
拌しておき、これに30重量%のアンモニア水29.2
重量部とメタノール100重量部の混合物を室温にて滴
化して、36時間攪拌して、多孔質シリカゾルを生成し
た。ついで、8時間還流して、アンモニアを除去し、さ
らに、エバポレータによって濃縮して、固形分10重量
%の多孔質シリカゾルを得た。この時の平均粒子径は約
15nmであった。屈折率は実施例1と同様にして決定
した。その結果、本実施例における多孔質シリカゾルの
屈折率は1.28であった。Example 2 Tetramethoxysilane 73.
To 7 parts by weight of methanol, 757.2 parts by weight of methanol was added and stirred, and 30% by weight of ammonia water 29.2 was added thereto.
A mixture of 100 parts by weight of methanol and 100 parts by weight of methanol was added dropwise at room temperature and stirred for 36 hours to produce a porous silica sol. Then, the mixture was refluxed for 8 hours to remove ammonia, and further concentrated by an evaporator to obtain a porous silica sol having a solid content of 10% by weight. The average particle size at this time was about 15 nm. The refractive index was determined as in Example 1. As a result, the refractive index of the porous silica sol in this example was 1.28.
【0023】(実施例3)テトラエトキシシラン50重
量部とメチルトリメトキシシラン29.3重量部に、エ
タノール751.5重量部を添加し、攪拌しておき、こ
れに30重量%のアンモニア水25.6重量部とエタノ
ール100重量部の混合物を室温にて滴化して、48時
間攪拌して、多孔質シリカゾルを生成した。ついで、エ
バポレータによって、エタノールおよびアンモニアを留
去し、さらに、エタノールを添加し、再度エタノールを
留去して、固形分10重量%の多孔質シリカゾルを得
た。この時の平均粒子径は約10nmであった。屈折率
は実施例1と同様にして決定した。その結果、本実施例
における多孔質シリカゾルの屈折率は1.24であっ
た。(Example 3) 751.5 parts by weight of ethanol was added to 50 parts by weight of tetraethoxysilane and 29.3 parts by weight of methyltrimethoxysilane, and the mixture was stirred. A mixture of 0.6 parts by weight and 100 parts by weight of ethanol was added dropwise at room temperature and stirred for 48 hours to produce a porous silica sol. Then, ethanol and ammonia were distilled off by an evaporator, ethanol was further added, and ethanol was distilled off again to obtain a porous silica sol having a solid content of 10% by weight. The average particle size at this time was about 10 nm. The refractive index was determined as in Example 1. As a result, the refractive index of the porous silica sol in this example was 1.24.
【0024】[0024]
【発明の効果】以上説明したように、本発明の多孔性シ
リカゾルはシリコンのアルコキシドをアンモニアで加水
分解した後、アンモニアを除去することによって、平均
粒子径が0.3〜100nmの範囲にあり、かつ、屈折
率が1.2〜1.4を示すものであるため、反射防止膜
形成用塗布液用の低屈折率フィラーとして用いることが
でき、これを使用した際に、非常に優れた反射防止膜を
作製することができるなどの効果が得られる。As explained above, the porous silica sol of the present invention has an average particle size in the range of 0.3 to 100 nm by hydrolyzing silicon alkoxide with ammonia and then removing ammonia. Moreover, since it has a refractive index of 1.2 to 1.4, it can be used as a low-refractive-index filler for a coating liquid for forming an antireflection film. It is possible to obtain the effect that the prevention film can be produced.
Claims (2)
にあり、かつ、屈折率が1.2〜1.4であることを特
徴とする多孔質シリカゾル。1. A porous silica sol having an average particle diameter of 0.3 to 100 nm and a refractive index of 1.2 to 1.4.
加水分解した後、アンモニアを除去することを特徴とす
る多孔質シリカゾルの製法。2. A method for producing a porous silica sol, which comprises hydrolyzing a silicon alkoxide with ammonia and then removing the ammonia.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5196534A JPH0748117A (en) | 1993-08-06 | 1993-08-06 | Porous silica sol and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5196534A JPH0748117A (en) | 1993-08-06 | 1993-08-06 | Porous silica sol and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0748117A true JPH0748117A (en) | 1995-02-21 |
Family
ID=16359344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5196534A Pending JPH0748117A (en) | 1993-08-06 | 1993-08-06 | Porous silica sol and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0748117A (en) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0826749A3 (en) * | 1996-08-26 | 1998-10-28 | Canon Kabushiki Kaisha | Electrodeposition coated member and electrodeposition coating material |
| WO1999052626A1 (en) * | 1998-04-08 | 1999-10-21 | Basf Aktiengesellschaft | Method for producing a shaped body using a metal oxide sol, shaped body,the use thereof in the production of an alkene oxide |
| WO2004088364A1 (en) * | 2003-03-31 | 2004-10-14 | Lintec Corporation | Optical film |
| JP2005099778A (en) * | 2003-08-28 | 2005-04-14 | Dainippon Printing Co Ltd | Anti-reflection laminate |
| JP2005263590A (en) * | 2004-03-19 | 2005-09-29 | National Institute Of Advanced Industrial & Technology | Aqueous wet forming of ceramic nanoparticles and production method of highly controlled porous ceramics |
| WO2006025503A1 (en) * | 2004-09-02 | 2006-03-09 | Catalysts & Chemicals Industries Co., Ltd. | Titanium-containing silica sol and process for producing the same, antifouling film and base material with ink-receptive layer, and method for reproducing recording base material |
| JP2006227596A (en) * | 2005-01-21 | 2006-08-31 | Pentax Corp | Optical element having antireflection film and method for producing the same |
| CN100337131C (en) * | 2003-12-18 | 2007-09-12 | 同济大学 | Preparing method for nanometer porous silica thin-membrane |
| CN100368099C (en) * | 2005-03-21 | 2008-02-13 | 四川世创达电子科技有限公司 | Manufacturing method of high light reflection film for PDP protective screen |
| CN100374215C (en) * | 2005-04-25 | 2008-03-12 | 北京化工大学 | A kind of preparation method of mesoporous silicon dioxide film |
| US7604866B2 (en) | 2003-06-18 | 2009-10-20 | Asahi Kasei Kabushiki Kaisha | Antireflection film |
| JP2010064932A (en) * | 2008-09-12 | 2010-03-25 | Mitsubishi Chemicals Corp | Method of manufacturing silica based porous film |
| EP2219051A1 (en) * | 2002-08-15 | 2010-08-18 | Fujifilm Corporation | Antireflection film, polarizing plate and image display device |
| JP2012517513A (en) * | 2009-02-12 | 2012-08-02 | バイエル・マテリアルサイエンス・アクチェンゲゼルシャフト | Anti-reflective / anti-fog coating |
| KR20140120340A (en) | 2012-02-02 | 2014-10-13 | 닛산 가가쿠 고교 가부시키 가이샤 | Low refractive index film-forming composition |
| KR20190008007A (en) * | 2017-07-14 | 2019-01-23 | 주식회사 엘지화학 | Method for preparing hydrophobic silica aerogel |
| KR20220127673A (en) * | 2021-03-11 | 2022-09-20 | 한국세라믹기술원 | Method of Manufacturing of Aggregate-Silica Sol by controlling aging time |
| KR20240041098A (en) * | 2022-09-22 | 2024-03-29 | 한국세라믹기술원 | Method of Manufacturing of Aggregated Silica Sol by controlling aging time using Acid Catalysts |
-
1993
- 1993-08-06 JP JP5196534A patent/JPH0748117A/en active Pending
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0826749A3 (en) * | 1996-08-26 | 1998-10-28 | Canon Kabushiki Kaisha | Electrodeposition coated member and electrodeposition coating material |
| WO1999052626A1 (en) * | 1998-04-08 | 1999-10-21 | Basf Aktiengesellschaft | Method for producing a shaped body using a metal oxide sol, shaped body,the use thereof in the production of an alkene oxide |
| EP2219051A1 (en) * | 2002-08-15 | 2010-08-18 | Fujifilm Corporation | Antireflection film, polarizing plate and image display device |
| CN100378470C (en) * | 2003-03-31 | 2008-04-02 | 琳得科株式会社 | optical film |
| WO2004088364A1 (en) * | 2003-03-31 | 2004-10-14 | Lintec Corporation | Optical film |
| US7119959B2 (en) | 2003-03-31 | 2006-10-10 | Lintec Corporation | Optical film |
| US7604866B2 (en) | 2003-06-18 | 2009-10-20 | Asahi Kasei Kabushiki Kaisha | Antireflection film |
| JP2005099778A (en) * | 2003-08-28 | 2005-04-14 | Dainippon Printing Co Ltd | Anti-reflection laminate |
| CN100337131C (en) * | 2003-12-18 | 2007-09-12 | 同济大学 | Preparing method for nanometer porous silica thin-membrane |
| JP2005263590A (en) * | 2004-03-19 | 2005-09-29 | National Institute Of Advanced Industrial & Technology | Aqueous wet forming of ceramic nanoparticles and production method of highly controlled porous ceramics |
| JP4805156B2 (en) * | 2004-09-02 | 2011-11-02 | 日揮触媒化成株式会社 | Titanium-containing silica sol and method for producing the same, antifouling coating and substrate with ink receiving layer, and method for reproducing recording substrate |
| WO2006025503A1 (en) * | 2004-09-02 | 2006-03-09 | Catalysts & Chemicals Industries Co., Ltd. | Titanium-containing silica sol and process for producing the same, antifouling film and base material with ink-receptive layer, and method for reproducing recording base material |
| JP2006227596A (en) * | 2005-01-21 | 2006-08-31 | Pentax Corp | Optical element having antireflection film and method for producing the same |
| CN100368099C (en) * | 2005-03-21 | 2008-02-13 | 四川世创达电子科技有限公司 | Manufacturing method of high light reflection film for PDP protective screen |
| CN100374215C (en) * | 2005-04-25 | 2008-03-12 | 北京化工大学 | A kind of preparation method of mesoporous silicon dioxide film |
| JP2010064932A (en) * | 2008-09-12 | 2010-03-25 | Mitsubishi Chemicals Corp | Method of manufacturing silica based porous film |
| JP2012517513A (en) * | 2009-02-12 | 2012-08-02 | バイエル・マテリアルサイエンス・アクチェンゲゼルシャフト | Anti-reflective / anti-fog coating |
| KR20140120340A (en) | 2012-02-02 | 2014-10-13 | 닛산 가가쿠 고교 가부시키 가이샤 | Low refractive index film-forming composition |
| KR20200051853A (en) | 2012-02-02 | 2020-05-13 | 닛산 가가쿠 가부시키가이샤 | Low refractive index film-forming composition |
| KR20190008007A (en) * | 2017-07-14 | 2019-01-23 | 주식회사 엘지화학 | Method for preparing hydrophobic silica aerogel |
| KR20220127673A (en) * | 2021-03-11 | 2022-09-20 | 한국세라믹기술원 | Method of Manufacturing of Aggregate-Silica Sol by controlling aging time |
| KR20240041098A (en) * | 2022-09-22 | 2024-03-29 | 한국세라믹기술원 | Method of Manufacturing of Aggregated Silica Sol by controlling aging time using Acid Catalysts |
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