JPH0766332A - Semiconductor device - Google Patents

Abstract

(57) [Summary] [Structure] Inner leads 3 arranged around the semiconductor chip 5 and the IC chip of the semiconductor device, and the semiconductor chip 5 and the inner leads 3 are bonded by the wires 2, which are resin-sealed. In a semiconductor device, a plurality of metallic protrusions (metal bumps) are formed on an IC chip covered with a protective film.
8. A semiconductor device, wherein: 8 are provided, and a metal member (metal rod) 6 is placed on each. Further, the metal member is exposed to the outside from the package surface. The metal member and the metallic projection are fixed with a non-conductive adhesive or the like. It is characterized in that the metal member and the metallic projection are also placed on the back surface of the die pad. [Effect] The heat generated on the IC chip 5 is conducted to the outside through the metal rods 6 extending on the metal bumps 8 mounted on the protective film, and a high heat dissipation property which is not achieved by the conventional PKG is provided. It can be provided.

Description

Detailed Description of the Invention

FIELD OF THE INVENTION The present invention relates to the structure of IC packages.

2. Description of the Related Art In a conventional semiconductor device, as shown in FIG. 2, an IC chip 5 having a protective film 7 mounted on its surface is mounted on a die pad portion 4 of a lead frame, and from the IC chip to the inner leads 3. The structure is such that those connected by using the conductive thin wire 2 are covered with the resin 1.

When the current I flows on the wiring having the specific resistance R, Joule heat Q is generated there and Q
= The amount of heat given by RI ² (J) is generated. In recent years, I
The progress of the submicron processing technology in the manufacturing process has increased the degree of integration of the C chip, and its processing speed has become extremely fast. As the integration degree of the IC chip increases and the processing speed increases, the amount of current passing over the IC unit surface area per unit time increases accordingly, so that the current I of Joule heat Q = RI ² explained above increases by ΔI. Then, the heat generation amount Q also increases by ΔQ = RΔI ² . Increase in junction temperature ΔT contributed by the amount of heat ΔQ generated at the pn junction of the IC chip
As a result, if the junction temperature T exceeds the rating, leakage current increases, long-term reliability deteriorates, and the like. Also, I
With the expansion of the C chip and the sealing resin, each element inside the package having a different coefficient of thermal expansion contracts at the time of cooling during the heat history at the time of base joining by solder, and the difference in the coefficient of thermal expansion. Therefore, a gap is generated between each element, and foreign matter such as water enters from the outside. If heat is applied to the package in this state, foreign matter such as moisture that has penetrated into the package will expand and destroy the package.

In order to solve the above-mentioned problems, a semiconductor device of the present invention has a plurality of metallic projections provided on the surface of an IC chip covered with a protective film, and a metallic member is placed on each of the metallic projections. It is characterized by being

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a diagram of a main part for explaining an embodiment of the present invention. I placed on the die pad 4 of the lead frame
A thin metal wire 2 is connected to the inner lead 3 of the lead frame from the output pad on the C chip 5 and is surrounded by a non-conductive resin material (mold material) 1. The chip surface is a protective film (for example, a polyimide film) 7 for wiring protection.
And a metal member 8, for example, made of copper, is placed on the upper surface by plating or vapor deposition, and a metal rod 6, for example, made of copper is placed on the upper surface. ing. Considering the flow of heat, the amount of heat generated in the IC chip moves to the sealing resin or the metal member or metal rod mounted on the IC chip, and either stays there or moves to the outside air. Since the heat conductivity of the flexible rod is better than that of the sealing resin, the amount of heat transferred to the metal rod increases,
It becomes difficult to confine heat to the IC itself or the PKG itself.
Therefore, the junction temperature at the pn junction can be suppressed below the rated value, and malfunction of the IC can be prevented. Further, thermal expansion or contraction due to cooling is less likely to occur in the package or each element constituting the package, so that a gap that is considered to occur between the elements is less likely to occur and the risk of foreign matter entering is reduced. FIG. 3 shows a plan view of the package configured by this method as seen from above. An external circuit is connected to an IC chip by a lead frame 3 covered with a mold resin 1, and a metal rod for heat dissipation is looking through the mold resin surface. In order to further enhance the heat dissipation effect, as shown in FIG. 4, the metallic rod 6 on the metal member 8 placed on the IC chip 5 via the protective film 7 protrudes from the surface of the sealing resin 1 and the protrusion thereof. A metal piece 9, for example, made of a copper material is adhered to the open portion with a polyimide tape or the like. The larger the contact area of the metal piece with the outside air, the higher the heat dissipation effect. Therefore, the metal piece having the largest possible area is desirable. If the surface of the metal piece 9 is provided with irregularities as shown in FIG. 5, the surface area in the height direction corresponding to the irregularities increases. This metal rod 6 for heat dissipation is not only placed on the front surface side of the chip, but also a metal member 8 is provided on the back surface of the die pad 4 on the back surface side of the chip as shown in FIG. By extending and exposing it, a greater heat dissipation effect than on one side is achieved. Further, by adopting such a structure, it is possible to fix the absolute position of the die pad, which occurs at the time of molding, in the vertical direction with respect to the package structure.

By using the semiconductor device of the present invention, it is possible to provide the package with a high heat radiation property which cannot be achieved by the conventional package structure, and therefore the reliability of the semiconductor device can be improved, and The vertical movement of the die pad during molding can also be suppressed.

[Brief description of drawings]

FIG. 1 is a sectional view of an essential part for explaining an embodiment of the present invention.

FIG. 2 is a sectional view of a conventional package.

FIG. 3 is a view of the package of the present invention seen from above.

FIG. 4 is a diagram in which a heat sink is attached to the package of the present invention.

FIG. 5 is a diagram showing a package of the present invention with a heat sink having irregularities attached thereto.

FIG. 6 is a view in which a metal rod for heat dissipation is placed on the top and bottom of the package of the present invention.

[Explanation of symbols]

 1 Resin 2 Metal Fine Wire 3 Inner Lead 4 Die Pad 5 IC Chip 6 Metal Rod 7 Protective Film 8 Metal Projection 9 Metal Piece

Claims (4)

[Claims] 1. A semiconductor device in which an IC chip, an inner lead arranged around the IC chip, and a conductive thin wire connecting the semiconductor chip and the inner lead are resin-sealed, and covered with a protective film. A semiconductor device, wherein a plurality of metallic projections are provided on an IC chip and a metal member is mounted on each of them. 2. A semiconductor device, wherein the metal member according to claim 1 is exposed from the package surface to the outside. 3. A semiconductor device, wherein the metal member according to claim 1 and the metallic projection are fixed by a non-conductive adhesive or the like. 4. A semiconductor device, wherein the metal member and the metallic projection of claim 1 are also mounted on the back surface of the die pad.