JPH0770095B2 - Magneto-optical recording medium - Google Patents

Magneto-optical recording medium

Info

Publication number
JPH0770095B2
JPH0770095B2 JP61186933A JP18693386A JPH0770095B2 JP H0770095 B2 JPH0770095 B2 JP H0770095B2 JP 61186933 A JP61186933 A JP 61186933A JP 18693386 A JP18693386 A JP 18693386A JP H0770095 B2 JPH0770095 B2 JP H0770095B2
Authority
JP
Japan
Prior art keywords
magneto
optical recording
recording medium
film
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61186933A
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Japanese (ja)
Other versions
JPS6344339A (en
Inventor
哲生 飯島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
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Filing date
Publication date
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Priority to JP61186933A priority Critical patent/JPH0770095B2/en
Publication of JPS6344339A publication Critical patent/JPS6344339A/en
Publication of JPH0770095B2 publication Critical patent/JPH0770095B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 〈発明の属する技術分野〉 この発明は、高感度記録および再生容易かつ経時劣化の
小さい光記録媒体に関する。
Description: TECHNICAL FIELD The present invention relates to an optical recording medium in which high-sensitivity recording / reproduction is easy and deterioration with time is small.

〈発明の技術的背景〉 光による情報の書き込みあるいは読み出しをする情報記
録において、使用する記録媒体は、通常、支持体上面に
記録層として光磁気記録材料層を設けたものが用いられ
る。
<Technical Background of the Invention> In information recording in which information is written or read by light, a recording medium used is usually one in which a magneto-optical recording material layer is provided as a recording layer on the upper surface of a support.

このような構成の光磁気記録媒体により情報の書き込
み、読み出しおよび消去は次のようにして行われる。す
なわち第4図(A)(B)(C)に示すように、記録層
1に対し、その膜面と垂直方向に弱い磁場Hを加え垂直
方向に磁化しておき、記録しようとする部分2にレーザ
光3を照射しキュリー点(又は補償点)近くまで加熱す
ると保磁力Hcが減少し磁場Hによって自発磁化Msは逆転
する。
Information is written, read, and erased by the magneto-optical recording medium having such a configuration as follows. That is, as shown in FIGS. 4 (A), (B), and (C), a weak magnetic field H is applied to the recording layer 1 in a direction perpendicular to the film surface of the recording layer 1 so as to magnetize the recording layer 1 in a perpendicular direction, and a portion 2 to be recorded. When the laser beam 3 is irradiated on the surface and heated to near the Curie point (or the compensation point), the coercive force H c decreases and the magnetic field H reverses the spontaneous magnetization M s .

このようにして反転した磁化領域2はレーザ照射を停止
した後も、その磁化反転状態は保たれるから、いわゆる
情報の記録が可能となる。
The magnetization region 2 thus reversed retains its magnetization reversal state even after the laser irradiation is stopped, so that it is possible to record information.

そして、このようにして記録された情報は、記録部分に
直接偏光を照射すると記録部分の磁化の向きによって、
反射光あるいは透過光の振動面は磁気カー効果あるいは
ファラデー効果のため、異った向きに回転する。したが
って検光子を挿入すれば、磁化に対応した信号が読み出
せる。
Then, the information recorded in this way, when the recording portion is directly irradiated with polarized light, depending on the magnetization direction of the recording portion,
The vibrating surface of the reflected light or the transmitted light rotates in different directions due to the magnetic Kerr effect or the Faraday effect. Therefore, by inserting an analyzer, a signal corresponding to the magnetization can be read.

さらに、記録された情報を消去するときは、上述した情
報書き込み時の磁場Hと逆方向の磁場を加えるととも
に、熱を加えると、加熱された部分の磁化は元の向に戻
すことができる故、その記録媒体を反復使用することが
できる。
Furthermore, when the recorded information is erased, by applying a magnetic field in a direction opposite to the magnetic field H at the time of writing the information and applying heat, the magnetization of the heated portion can be returned to the original direction. , The recording medium can be used repeatedly.

光磁気記録材料の主な材料名と、その特性を下記の表−
1に列記する。
The table below shows the main material names of magneto-optical recording materials and their characteristics.
Listed in 1.

ただし、表−1中のθk,θfはそれぞれカー回転角、フ
ァラデー回転角;LPEは液層エピタキシャル法による成
膜;ICは鉄ガーネットであることを示す。
However, in Table-1, θ k and θ f are Kerr rotation angle and Faraday rotation angle, respectively; LPE is film formation by liquid layer epitaxial method; IC is iron garnet.

上述した光磁気記録材料で成膜したときの膜の結晶構造
を分類すると多結晶膜、単結晶膜、非晶質(以下「アモ
ルファス」という)膜に大別できる。
The crystal structures of the films formed by the above-mentioned magneto-optical recording materials can be classified into polycrystalline films, single crystal films, and amorphous (hereinafter referred to as "amorphous") films.

A)多結晶膜: 1960年代後半から1970年代前半にかけて多くの結晶膜材
料が調査検討されたが、未だ実用化されていない。
A) Polycrystalline film: Many crystalline film materials have been investigated and studied from the latter half of the 1960s to the first half of the 1970s, but they have not been put to practical use yet.

すなわち、MnBiは360℃に相転移点があり、化学的に不
安定である。EuOはキュリー点が室温以下であり、垂直
磁化が得られない。
That is, MnBi has a phase transition point at 360 ° C and is chemically unstable. EuO has a Curie point below room temperature and cannot obtain perpendicular magnetization.

PtCoはキュリー点が高温に過ぎ、消去磁場を大にしなけ
ればならない欠点があった。
PtCo has a disadvantage that the Curie point is too high and the erasing magnetic field must be increased.

近年開発されたMuBiCuは、相転移がなく、キュリー点も
適当な高さにあるため有望な材料と思われているが、未
だ実用化されていない。
MuBiCu, which has been developed in recent years, is considered to be a promising material because it has no phase transition and an appropriate Curie point, but it has not yet been put to practical use.

B)単結晶膜: 光磁気記録できる単結晶膜材料は、主に磁性ガーネツト
が知られているが、化学的に不安定である。反面、磁気
光学効果が大きい利点はある。しかし、記録に要するレ
ーザパワーが大きく、液相エピキシャル成長法(LPE
法)で成膜しなければならないから、大面積のものが作
れない。
B) Single crystal film: As a single crystal film material capable of magneto-optical recording, a magnetic garnet is mainly known, but it is chemically unstable. On the other hand, there is an advantage that the magneto-optical effect is large. However, the laser power required for recording is large, and the liquid phase epitaxial growth method (LPE
Method, it is not possible to make a large area.

最近は、蒸着やスパッタ法による多結晶膜として、ある
いはその熱処理による固相エピタキシャル膜として、ガ
ーネットやフェライト膜の開発が進められているが、未
だ実用階段には至っていない。
Recently, garnet and ferrite films have been developed as polycrystalline films formed by vapor deposition or sputtering, or as solid-phase epitaxial films formed by heat treatment thereof, but they have not reached the stage of practical use.

C)アモルファス膜: アモルファス膜材料として知られているのは、Gd,Tb,Dy
などの希土類元素と、Fe,Coなどの遷移元素の合金であ
って、いずれもフエリ磁性を示す。この合金系材料の中
に補償点記録材料も、キュリー点記録材料のものもあ
る。
C) Amorphous film: Gd, Tb, Dy are known as amorphous film materials.
It is an alloy of rare earth elements such as Fe and Co, and transition elements such as Fe and Co, and all exhibit ferrimagnetism. Among these alloy materials, there are a compensation point recording material and a Curie point recording material.

補償点記録材料にはGdCoやGdFeなどがあるが保磁力が小
さ過ぎて安定性に欠ける上、均質な特性の大面積素子を
得るのが難かしいなどの不具合がある。
Compensation point recording materials include GdCo and GdFe, but they have problems such as coercive force being too small and lacking in stability, and it is difficult to obtain a large-area element with uniform characteristics.

最近はGdCoにTbを添加して保磁力Hcを大きくする研究
や、TbFeCoなど保磁力の大きな材料を探索する検討が行
われている。
Recently, studies have been conducted to increase the coercive force H c by adding Tb to GdCo, and investigations into materials with large coercive force such as TbFeCo.

アモルファス膜材料のうち、キュリー点記録材料として
最初に検討されたのはTbFe膜である。この膜は記録感度
が高く、保磁力も大きい。
Of the amorphous film materials, the TbFe film was first examined as a Curie point recording material. This film has high recording sensitivity and large coercive force.

上述した各種光磁気記録材料膜のうちでもアモルファス
膜が半導体レーザで書き込み、再生消去でき、かつ大容
量メモリ材料として有用と考えられている。また、多結
晶膜の実用化は十分ではないが、材料の種類、処理方法
によっては有用な光磁気記録材料膜が作れると考えられ
ている。
Of the various magneto-optical recording material films described above, an amorphous film is considered to be capable of writing, reproducing and erasing with a semiconductor laser, and is useful as a large capacity memory material. Although the polycrystalline film has not been put to practical use sufficiently, it is considered that a useful magneto-optical recording material film can be produced depending on the type of material and the processing method.

〈発明が解決しようとする問題点〉 ところが、上述した光磁気記録材料膜中、アモルファス
膜の構成元素は、希土類元素と遷移金属元素であり、こ
れらの元素はもともと酸化されやすく、経時劣化を防ぐ
ことが難かしく実用に供する上で最大の問題であった。
このような経時劣化を改善するため、第3元素を添加す
る方法が提案された。たとえば、Al,Cr,TiあるいはPtな
どの貴金属元素を添加するこころみがなされた。
<Problems to be Solved by the Invention> However, in the above-described magneto-optical recording material film, the constituent elements of the amorphous film are a rare earth element and a transition metal element, and these elements are originally easily oxidized and prevent deterioration over time. It was difficult and the biggest problem in practical use.
In order to improve such deterioration over time, a method of adding a third element has been proposed. For example, it has been attempted to add precious metal elements such as Al, Cr, Ti or Pt.

しかし、これらの添加元素は、添加量を増すと、本来の
反射率、カー回転角等が劣化する。たとえば、応用磁気
学会主催の第9回日本応用磁気学会における『第9回日
本応用磁気学会学術講演概要集』第209頁に掲載された
田中氏他による報告「添加元素による光磁気ディスクの
長寿命化」および同文献の第210頁に掲載された松島氏
他による報告「GdTbFeCo4元系光磁気記録媒体の耐久
性」において、それぞれTi,Crの添加量を増大するとカ
ー回転角の劣化およびPtの添加によってもカー回転角の
劣化が著るしく満足できるものがなかった。
However, when the additive amount of these additive elements is increased, the original reflectance, Kerr rotation angle, etc. are deteriorated. For example, the report by Mr. Tanaka et al., “Long-life of magneto-optical disk due to additional element”, which was published on page 209 of “9th Japan Society for Applied Magnetics Academic Lectures” at 9th Japan Applied Magnetics Society sponsored by Japan Society for Applied Magnetics. , And the report by Matsushima et al., “Durability of GdTbFeCo Quaternary Magneto-Optical Recording Medium” on page 210 of the same document, when the addition amounts of Ti and Cr are increased, Kerr rotation angle deterioration and Pt Even with the addition, the deterioration of the Kerr rotation angle was not very satisfactory.

また、MnBi,MnBiCu等の多結晶膜の光磁気記録材料膜の
場合も、その光磁気特性が劣化する傾向があった。
Also, in the case of a magneto-optical recording material film of a polycrystalline film such as MnBi or MnBiCu, the magneto-optical characteristics tend to deteriorate.

この発明は経時劣化の小さい記録層を有する光磁気記録
媒体を提供しようとするものである。
The present invention is intended to provide a magneto-optical recording medium having a recording layer which is less deteriorated with time.

また、この発明は、経時劣化が小さいのみならず高感度
記録および再生容易な光磁気記録媒体を提供しようとす
るものである。
Further, the present invention is intended to provide a magneto-optical recording medium which is easy to record and reproduce with high sensitivity as well as having little deterioration with time.

〈問題点を解決するための手段〉 上述の問題を解決するためこの発明の光磁気記録媒体
は、記録層がInを添加した光磁気記録材料のアモルファ
ス膜又は多結晶膜で構成してなる光磁気記録媒体であっ
て、上記光磁気記録材料に添加するInを記録層の表面お
よび底面のうちのいずれか一又は両面側が内部よりも高
くなるように濃度分布を与えることによって、特に経時
劣化を効率的に小さくできる。
<Means for Solving the Problems> In order to solve the above problems, the magneto-optical recording medium of the present invention is an optical recording medium in which the recording layer is composed of an amorphous film or a polycrystalline film of a magneto-optical recording material to which In is added. A magnetic recording medium, in which In added to the magneto-optical recording material is given a concentration distribution such that one or both of the surface and the bottom surface of the recording layer is higher than the inside, so that deterioration over time is particularly caused. Can be efficiently reduced.

また、この発明の光磁気記録媒体は記録層を希土類元素
と遷移金属元素からなる合金材料にInに添加したアモル
ファス膜で構成したものが特に効果が優れている。
Further, the magneto-optical recording medium of the present invention is particularly excellent in its effect when the recording layer is composed of an amorphous film obtained by adding In to an alloy material composed of a rare earth element and a transition metal element.

さらに、またこの発明の光磁気記録媒体は記録層をMnB
i,MnBiCuなどの多結晶膜で構成したものであってもよ
い。
Furthermore, in the magneto-optical recording medium of the present invention, the recording layer is MnB.
It may be composed of a polycrystalline film such as i, MnBiCu.

〈作用〉 以上のように光磁気記録層をInを添加した光磁気記録材
料で構成しているから水分、酸素等が光磁気記録層の表
面から内部に侵入し、材料を酸化し磁気特性を劣化する
ことがない。また、実験結果によれば光磁気記録層のカ
ー回転角あるいはファラデー回転角の劣化も殆んどな
い。
<Operation> As described above, since the magneto-optical recording layer is composed of the magneto-optical recording material with In added, moisture, oxygen, etc. enter the inside of the magneto-optical recording layer from the surface and oxidize the material to improve the magnetic characteristics. It does not deteriorate. Further, according to the experimental results, the Kerr rotation angle or the Faraday rotation angle of the magneto-optical recording layer is hardly deteriorated.

〈実施例〉 次に、実施例および比較例に基づいてこの発明を具体的
に説明する。
<Example> Next, the present invention will be specifically described based on Examples and Comparative Examples.

(実施例1〜5) (A)製造方法: 第1図は実施例の光磁気記録媒体の成膜に使用する高周
波スパッタ装置11の概略構成を示す。
(Examples 1 to 5) (A) Manufacturing method: FIG. 1 shows a schematic configuration of a high frequency sputtering apparatus 11 used for forming a film on a magneto-optical recording medium of an example.

第1図の高周波スパッタ装置11は、真空槽4内に設けた
ターゲット側電極5、基板側電極7、高周波電源8、ス
パッタガス供給源9とからなっている。さらにターゲッ
ト側電極5および基板側電極7は真空槽4外から供給さ
れる冷却水によって冷却されており、ターゲット側電極
5上に成膜しようとする光磁気記録媒体の構成元素であ
る純度99.99%、大きさ100mmφのFe6−1,純度99.99%、
大きさ10mm角のTbペレット6−2および5mm角以下のIn
片6−3が載置され複合ターゲットを形成している。ま
た、基板10としてガラス板を基板側電極7上に配置す
る。
The high frequency sputtering apparatus 11 of FIG. 1 comprises a target side electrode 5, a substrate side electrode 7, a high frequency power source 8 and a sputtering gas supply source 9 provided in a vacuum chamber 4. Further, the target-side electrode 5 and the substrate-side electrode 7 are cooled by cooling water supplied from the outside of the vacuum chamber 4, and the purity of 99.99% which is a constituent element of the magneto-optical recording medium to be formed on the target-side electrode 5 , Size 100mmφFe6-1, purity 99.99%,
10mm square Tb pellets 6-2 and 5mm square or smaller In
Pieces 6-3 are placed to form a composite target. Further, a glass plate as the substrate 10 is arranged on the substrate side electrode 7.

しかし、Inは融点が低いため先にスパッタされやすい。
従って、Inの制御には注意が必要である。例えば、In片
を電極内の電界密度の低い部位に設置するか、その影響
が少ないようIn片を小さくする必要がある。具体的に
は、基板10のIn濃度を増大させるためには、In片6−3
をターゲット上に配置すればよく、表面側のIn濃度を増
大させたい場合には、前記電解強度の小さい部位にIn片
を配置すればよい。また、図示していない別のターゲッ
トからInをスパッタする、などの方法によればInの濃度
分布を与えるのは容易である。
However, since In has a low melting point, it is likely to be sputtered first.
Therefore, attention must be paid to the control of In. For example, it is necessary to install the In piece at a site in the electrode where the electric field density is low, or to make the In piece small so that the influence thereof is small. Specifically, in order to increase the In concentration of the substrate 10, the In piece 6-3
Should be placed on the target, and if it is desired to increase the In concentration on the surface side, the In piece should be placed at the site where the electrolytic strength is low. Further, it is easy to give the In concentration distribution by a method such as sputtering In from another target not shown.

この装置11を用いて光磁気記録媒体を成膜するときは、
図示しない排気系を作動して真空槽4内を8×10-7Torr
以下に排気した後、スパッタガスとしてガス供給源9か
らArガスを真空槽4内に導き、槽内のスパッタガス圧を
4×10-2〜8×10-2Torrにし高周波放電させたところ、
基板10上にInを添加したTbFeアモルファス膜が500〜800
Åの厚さに堆積していた。この膜厚さは図示しない段差
計で計測し、膜組成はTbおよびInペレットの数でコント
ロールし、X線光電子分光計で分析した。
When forming a magneto-optical recording medium using this device 11,
Operate an exhaust system (not shown) to move the vacuum chamber 4 to 8 × 10 -7 Torr.
After exhausting to the following, Ar gas was introduced into the vacuum chamber 4 from the gas supply source 9 as the sputtering gas, the sputtering gas pressure in the chamber was set to 4 × 10 −2 to 8 × 10 −2 Torr, and high frequency discharge was performed.
500-800 TbFe amorphous film with In added on substrate 10
It was deposited to a thickness of Å. The film thickness was measured by a step meter (not shown), the film composition was controlled by the numbers of Tb and In pellets, and analyzed by an X-ray photoelectron spectrometer.

以上のようにして順次作製した試料をNo.1,No.2,…,No.
5と名付ける。ただし、No.1,No.2,No.3,No.5の膜組成は
Inの組成Y(at.%)が、0.7〜1.4;2;3〜6;50の濃度分
布を与えられており、(TbFe)1-YInYの組成をもってい
る。またNo.4はTbFeCoの組成が(各25−60−15atm.%)
からなる合金ターゲットを用いて作製されている。
No.1, No.2, ..., No.
Name it 5. However, the film composition of No. 1, No. 2, No. 3, and No. 5 is
The composition Y (at.%) Of In is given a concentration distribution of 0.7 to 1.4; 2; 3 to 6; 50, and has a composition of (TbFe) 1 -Y In Y. No. 4 has a composition of TbFeCo (25-60-15 atm.% Each).
It is produced using an alloy target made of.

(比較例1) ターゲット側電極5上にInペレットを載置しない以外は
実施例1と同様の方法で作製した試料をNo.6とした。
(Comparative Example 1) Sample No. 6 was prepared in the same manner as in Example 1 except that the In pellet was not placed on the target-side electrode 5.

(比較例2) No.3と同様な方法で作製し表面又は表層のIn量を0.7〜
0.9の濃度分布にした試料をNo.7とした。
(Comparative example 2) The In amount on the surface or the surface layer was 0.7 to
The sample having a concentration distribution of 0.9 was designated as No. 7.

(実施例6) 基板10としてポリカーボネイト(PC)を用いた以外は、
試料No.3と同様の複合ターゲットおよび方法により作製
した試料をNo.8とした。
(Example 6) Except for using polycarbonate (PC) as the substrate 10,
Sample No. 8 was prepared using the same composite target and method as Sample No. 3.

(実施例7) 基板としてポリ・メチル・メタクリレート(PMMA)を用
いた以外は試料No.3と同様の複合ターゲットおよび方法
により作製した試料をNo.9とした。
(Example 7) Sample No. 9 was prepared by the same composite target and method as Sample No. 3 except that polymethyl methacrylate (PMMA) was used as the substrate.

(B)特性試験: 次に、上述の試料No.1〜No.9のカー回転角、磁化変化率
の経時劣化率について測定結果を表−2に示す。
(B) Characteristic test: Next, Table 2 shows the measurement results of the Kerr rotation angle and the deterioration rate of the magnetization change rate with time of the above-mentioned samples No. 1 to No. 9.

表−2の各試料の反射率は日立製H−340L型紫外・可視
分光光度計を用い、波長850−600nmの範囲で走査した
(表2には830nmでの値の変化率を示した)。磁気特性
は振動型磁力計(米国プリンストン製モデル155型)を
用い、最大磁場10kOeで測定した。表2中の〈 〉付の
試料は残留磁化Irに相当するy(磁化)軸を横切る点で
整理した。
The reflectance of each sample in Table-2 was scanned in the wavelength range of 850-600 nm using a Hitachi H-340L type UV / visible spectrophotometer (Table 2 shows the rate of change of the value at 830 nm). . The magnetic characteristics were measured with a vibrating magnetometer (Princeton model 155 model, USA) at a maximum magnetic field of 10 kOe. The samples with <> in Table 2 are arranged at points crossing the y (magnetization) axis corresponding to the residual magnetization Ir.

また、試料のカー回転角は、日本応用磁気学会編、『第
27回研究会試料』No.27−9,pp.41−48に掲載された阿部
氏による報告「CoCr膜のカー効果と光磁気メモリーへの
応用」による偏光面変調法にしたがって測定し、成膜後
のカーヒステリシスからθkの値(相対値)を求め、試
料No.6(比較例)のθkを規準にした相対値で示した。
これからわかるように、θkの初期特性はy=0.7−20
(at.%)では、y=0の比較例に比べてむしろ大き
い。しかし、y=50(at.%)では、0.95(膜面)、0.9
(ガラス面)と若干低下しており、In濃度には適性な濃
度範囲(少なくとも0.7at.%以上50at.%未満)がある
ことがわかる。
In addition, the Kerr rotation angle of the sample was
Measured according to the polarization plane modulation method according to the report by Mr. Abe, "Kerr effect of CoCr film and its application to magneto-optical memory," published in "27th Study Group Sample" No.27-9, pp.41-48. The value of θ k (relative value) was obtained from the Kerr hysteresis after the film, and shown as a relative value based on θ k of Sample No. 6 (Comparative Example).
As can be seen, the initial characteristic of θ k is y = 0.7−20
(At.%) Is rather large as compared with the comparative example of y = 0. However, when y = 50 (at.%), 0.95 (membrane surface), 0.9
(Glass surface), which is slightly lower, indicating that the In concentration has an appropriate concentration range (at least 0.7 at.% And less than 50 at.%).

また、成膜後試料をのオージェ(Auger)分光計を用い
てその深さ方向の元素濃度を調べた。結果を表2のIn濃
度比らんに示した。その特徴は不純物であるIn元素の膜
内部の平均的濃度に対して表面又は表面から深さ50〜80
Åの間の表層のIn濃度が1.02〜10であることが比較例N
o.7と異なっている。
In addition, the element concentration in the depth direction of the sample after film formation was examined using an Auger spectrometer. The results are shown in Table 2 for In concentration ratio. The characteristic is that the average concentration of In element as an impurity inside the film is 50 to 80
Comparative Example N shows that the In concentration in the surface layer between Å is 1.02 to 10
Different from o.7.

なお、元素濃度はコンタミネーションを除いたTb,Fe,お
よびIn元素の3元素に着目して合計100%で規格化し
た。
The element concentration was normalized to 100% in total by paying attention to the three elements of Tb, Fe and In elements excluding contamination.

次に、経時劣化特性は試料を70℃、85%の恒温槽に入れ
て測定した結果を示した。
Next, the deterioration characteristics over time are shown as the results of measurement by placing the sample in a constant temperature bath at 70 ° C and 85%.

特性は恒温そうから試料を一時とり出し、反射率と、磁
化(H=10kOeのときの磁化)又は残留磁化Ir(I−H
曲線がy軸へ横切る点の値)の値で示し、表2に記し
た。表では各試料について、各々の初期の特性値からの
変化(相対値)で記した。曝露時間は測定時間を除いて
上記条件の恒温そうに入れた時間の積算で示したもので
ある。
As for the characteristics, the sample was taken out temporarily from the constant temperature, and the reflectance and magnetization (magnetization when H = 10 kOe) or residual magnetization Ir (I-H
The value at the point where the curve crosses the y-axis) is shown in Table 2. In the table, the change (relative value) from the initial characteristic value of each sample is described. The exposure time is shown by integrating the time of placing in the constant temperature bath under the above conditions excluding the measurement time.

表−2から、以下のことが判る。The following can be seen from Table-2.

(1)比較例No.6では初期(2時間)から反射率、磁化
とも大幅に低下し初めているが、Inを含む実施例の試料
No.1〜No.5の場合は反射率変化(1−ΔR/R)は全くみ
られず、磁化低下I/Ioも小さい。
(1) In Comparative Example No. 6, the reflectance and the magnetization start to decrease significantly from the initial stage (2 hours), but the sample of the example containing In
In the case of No. 1 to No. 5, no change in reflectance (1-ΔR / R) was observed and the decrease in magnetization I / Io was small.

(2)比較例の試料No.6の場合は20時間放置で膜は完全
劣化し、膜表面が透明化し磁性も失っているが、Inを添
加した本実施例の試料No.1〜No.5の場合は、120時間放
置しても反射率変化および磁性の低下は何れも小さい。
(2) In the case of the sample No. 6 of the comparative example, the film was completely deteriorated by leaving it for 20 hours and the surface of the film was transparent and the magnetism was lost, but the samples No. 1 to No. In the case of 5, the reflectance change and the decrease in magnetism are small even if left for 120 hours.

参考のため、本実施例の試料No.2と比較例の試料No.6を
70℃、相対湿度85%の条件の恒温槽中でそれぞれ120時
間および2時間保持した後、得られた各試料表面に可視
光を照射し、その反射光を光学顕微鏡で観察した結果を
第2図および第3図に示す。ただし、第2図は上述した
試料No.2の顕微鏡写真の模写図、第3図は顕微鏡写真で
示した。図中、向い部分は試料表面が金属光沢を示し、
照射光が強く反射され写真上において白く現われ、黒い
部分は上記雰囲気中に放置されたために酸化され、透明
化される。したがって、酸化の進行度の大小の応じ写真
上黒の濃度として観察される。
For reference, sample No. 2 of this example and sample No. 6 of comparative example are
After holding for 120 hours and 2 hours in a constant temperature bath at 70 ° C and relative humidity of 85%, the surface of each sample obtained was irradiated with visible light and the reflected light was observed with an optical microscope. Shown in Figures and FIG. However, FIG. 2 is a copy of the above-mentioned micrograph of sample No. 2, and FIG. 3 is a micrograph. In the figure, the sample surface shows a metallic luster in the facing part,
The irradiation light is strongly reflected and appears white in the photograph, and the black portion is oxidized and made transparent because it is left in the atmosphere. Therefore, it is observed as a black density on the photograph depending on the degree of progress of oxidation.

すなわち、試料No.2の場合は70℃、相対湿度85%の恒温
槽中で120時間保持するとその表面に黒点で示すようピ
ンホールが観測されるが、これは上記条件で熱する初期
の状態に比べて殆んど変化しておらず、表面は全く酸化
していないことを示している。これに反し、比較例の試
料No.6の場合は70℃、相対湿度85%の恒温槽中に2時間
保持しただけで表面の黒化が急激に増大し、酸化されて
いることを示している。
In other words, in the case of sample No. 2, pin holes as shown by black dots are observed on the surface when kept in a constant temperature bath at 70 ° C and relative humidity of 85% for 120 hours, which is the initial state of heating under the above conditions. There is almost no change compared with the above, indicating that the surface is not oxidized at all. On the contrary, in the case of the sample No. 6 of the comparative example, it was shown that the surface blackening drastically increased and was oxidized only after being kept in a thermostat at 70 ° C. and a relative humidity of 85% for 2 hours. There is.

(3)表には示していないが、120時間70℃85%環境下
に暴露した後の膜のカーヒステリシスを測ったところ、
No.2,No.3の各試料については基板面膜面両方からカー
ヒステリシスが得られた。とくにNo.2では基板面からの
カー回転角(相対値)は試験前の値と同一で劣化してい
ない。
(3) Although not shown in the table, the Kerr hysteresis of the film after exposure to 70 ° C and 85% environment for 120 hours was measured.
Kerr hysteresis was obtained from both the substrate surface and the film surface for the No. 2 and No. 3 samples. Especially in No. 2, the Kerr rotation angle (relative value) from the substrate surface was the same as the value before the test and did not deteriorate.

(4)試料No.4はTMとしてFeCoの2元素から成るTbFeCo
3元素をベースとしているが、Inの効果はTbFe2元系と全
く同様にみられた。
(4) Sample No. 4 is TbFeCo composed of two elements FeCo as TM
Although it is based on three elements, the effect of In was seen to be exactly the same as in the TbFe binary system.

(5)Inを多量に添加すると(試料No.5),角形のカー
ループは示さないが磁性は持つ。この場合も反射率、磁
化の経時安定性は高い。
(5) When a large amount of In is added (Sample No. 5), square car loops are not shown, but magnetism is present. In this case as well, the reflectance and the magnetization stability over time are high.

(6)比較例No.7は実施例No.3ど同様な方法で成膜した
ので、No.3と同様平均的な経時劣化特性は良い。しかし
ながら細かいピンホールが発生した。これは表面又は表
層のIn濃度が小さいためである。
(6) Since Comparative Example No. 7 was formed by the same method as that of Example No. 3, the average deterioration characteristics over time are good as in No. 3. However, fine pinholes occurred. This is because the surface or surface layer has a low In concentration.

(7)なお成膜直後のカーループで、θkの値はNo.6と
同一かそれ以上の値であり、In元素を含むことによるθ
kの低下はみられない。
(7) In the curl loop immediately after film formation, the value of θ k is the same as or greater than that of No. 6, and θ due to the inclusion of the In element.
There is no decrease in k .

以上のように、本発明になるInを含む希土類−遷移金属
元素アモルファス膜は70℃85%の環境下でも極めて安定
な特性を示しピンホールの発生も少ないことは明らかで
ある。なお、In添加量としては、50at%以下、好ましく
は20at%未満がよい。
As described above, it is clear that the rare earth-transition metal element amorphous film containing In according to the present invention exhibits extremely stable characteristics even under the environment of 70 ° C. and 85% and has few pinholes. The amount of added In is 50 at% or less, preferably less than 20 at%.

本実施例は光磁気記録材料として、TbFe,TbFeCoを用い
たものについて説明したが、希土類元素としてTbの代り
に、La,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Dy,Ho,Er,Tu,Yb,Lu,Sc,Y
を単独または混合して用いてもよく、遷移金属としてF
e,FeCoの代りにFe,Co,Niを単独または混合して用いて
も、In添加したアモルファス膜によつても同様の効果が
得られる。
In this example, as the magneto-optical recording material, TbFe, TbFeCo was used, but instead of Tb as a rare earth element, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Dy, Ho, Er, Tu, Yb, Lu, Sc, Y
May be used alone or in combination, and F may be used as the transition metal.
Similar effects can be obtained by using Fe, Co, Ni alone or in combination instead of e, FeCo, or by using an amorphous film containing In.

また希土類元素−遷移金属元素にInを添加したアモルフ
ァス膜でなくても結晶および結晶質構造を持つ光磁気記
録媒体であるMnBi,MuBiCu,PtCoにおいてもIn元素添加に
よって同様の効果が得られる。
Further, the same effect can be obtained by the addition of the In element even in MnBi, MuBiCu, and PtCo, which are magneto-optical recording media having a crystalline and crystalline structure, without being an amorphous film in which In is added to the rare earth element-transition metal element.

また、本実施例では高周波スパッタ法によって成膜した
ものについて述べたが、他の蒸着法、あるいはイオンビ
ームスパッタ等の他の成膜手段を用いても同様な効果が
ある。また、In元素の他、同等な電気陰性度を有する元
素、例えばZn,Ga,Cd,Ge,Sn,Pb,Sn等の元素を用いても同
様な効果が期待できる。
Further, in the present embodiment, the film formed by the high frequency sputtering method is described, but the same effect can be obtained by using another film forming means such as another vapor deposition method or ion beam sputtering. The same effect can be expected by using an element having an equivalent electronegativity other than the In element, for example, an element such as Zn, Ga, Cd, Ge, Sn, Pb or Sn.

Inのコントロールは多元のターゲットをもつスパッタあ
るいは蒸着装置ならば容易に実現可能である。しかも、
Inの濃度、勾配は本来の磁気的光学的特性をさまたげな
い範囲で拡大させることは可能であり、表面又は表層で
あることは本発明の効果を何ら限定するものでない。
In control can be easily realized with a sputtering or vapor deposition apparatus having multiple targets. Moreover,
The concentration and gradient of In can be expanded within a range that does not interfere with the original magnetic and optical characteristics, and the fact that the surface or surface layer does not limit the effect of the present invention.

〈発明の効果〉 以上の説明から明らかなように、この発明の光磁気記録
媒体は、第1にIn元素を含んでいることによって、さら
には第2の要因として膜表面又は表層の濃度が膜内部の
平均的な濃度の1.03〜10倍と高いことによって、経時劣
化が少なく、極めて安定した光磁気記録媒体である。ま
た、従来指摘されているようなカー回転角θkの低下も
少ないばかりか、却って増大する利点がある。
<Effects of the Invention> As is clear from the above description, the magneto-optical recording medium of the present invention contains, firstly, the In element, and further, as a second factor, the concentration of the film surface or the surface layer is the film. Since it is as high as 1.03 to 10 times the average internal density, it is an extremely stable magneto-optical recording medium with little deterioration over time. Further, there is an advantage that the decrease in the Kerr rotation angle θ k , which has been pointed out in the past, is small, but rather increased.

さらに、この発明の光磁気記録媒体は、下地層、オーバ
コート等の保護層の付与、あるいはディスク化したとき
エアサンドイッチ構造とを組合せることにより、書替え
可能な光磁気ディスクとして極めて高信頼な媒体が得ら
れることは明らかである。
Further, the magneto-optical recording medium of the present invention is a rewritable magneto-optical disc which is extremely highly reliable as a rewritable magneto-optical disc by providing a base layer, a protective layer such as an overcoat, or combining it with an air sandwich structure. It is clear that

【図面の簡単な説明】[Brief description of drawings]

第1図は実施例の光磁気記録媒体の成膜に使用する高周
波スパッタ装置の概略構成図、第2図は実施例の試料を
温度70℃、相対温度85%の恒温槽中で120時間放置後の
試料表面の状態を示す顕微鏡写真の模写図、第3図は比
較例の試料No.6を温度70℃、相対湿度85%の恒温槽中で
2時間放置後の試料表面の状態を示す顕微鏡写真、第4
図(A)(B)(C)は光磁気記録媒体への情報の書き
込み方法の原理説明図である。 図中、1……記録層、2……記録しようとする部分、3
……磁場、4……真空槽、5……ターゲット側電極、7
……基板側電極、8……高周波電源、9……スパッタガ
ス供給源、10……基板、11(全体符号)……高周波スパ
ッタ装置。
FIG. 1 is a schematic configuration diagram of a high frequency sputtering apparatus used for film formation of the magneto-optical recording medium of the example, and FIG. 2 is a sample of the example left for 120 hours in a constant temperature bath at a temperature of 70 ° C. and a relative temperature of 85%. A micrograph showing the condition of the sample surface after that, and FIG. 3 shows the condition of the sample surface after leaving Sample No. 6 of the comparative example in a constant temperature bath at a temperature of 70 ° C. and a relative humidity of 85% for 2 hours. Micrograph, 4th
(A) (B) (C) is an explanatory view of the principle of the method of writing information on the magneto-optical recording medium. In the figure, 1 ... Recording layer, 2 ... Area to be recorded, 3
... magnetic field, 4 vacuum chamber, 5 target electrode, 7
…… Substrate side electrode, 8 …… High frequency power supply, 9 …… Sputter gas supply source, 10 …… Substrate, 11 (whole code) …… High frequency sputtering device.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】記録層がInを添加した光磁気記録材料のア
モルファス膜又は多結晶膜で構成してなる光磁気記録媒
体であって、 上記光磁気記録材料に添加するInを、記録層の表面又は
底面あるいは両者側が内部よりも高くなるように濃度分
布を与えることを特徴とする光磁気記録媒体。
1. A magneto-optical recording medium in which the recording layer is composed of an amorphous film or a polycrystalline film of a magneto-optical recording material containing In, wherein In added to the magneto-optical recording material is A magneto-optical recording medium characterized by giving a concentration distribution such that the surface or bottom surface or both sides are higher than the inside.
【請求項2】上記Inを添加する光磁気記録材料は希土類
元素および遷移金属元素の合金材料とすることを特徴と
する特許請求の範囲第(1)項記載の光磁気記録媒体。
2. The magneto-optical recording medium according to claim 1, wherein the magneto-optical recording material to which In is added is an alloy material of a rare earth element and a transition metal element.
【請求項3】上記Inを添加する光磁気記録材料はMnBi,M
nBiCu,およびPtCoのうちいずれか一とすることを特徴と
する特許請求の範囲第(1)項記載の光磁気記録媒体。
3. The magneto-optical recording material to which In is added is MnBi, M
The magneto-optical recording medium according to claim 1, wherein the magneto-optical recording medium is one of nBiCu and PtCo.
JP61186933A 1986-08-11 1986-08-11 Magneto-optical recording medium Expired - Fee Related JPH0770095B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61186933A JPH0770095B2 (en) 1986-08-11 1986-08-11 Magneto-optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61186933A JPH0770095B2 (en) 1986-08-11 1986-08-11 Magneto-optical recording medium

Publications (2)

Publication Number Publication Date
JPS6344339A JPS6344339A (en) 1988-02-25
JPH0770095B2 true JPH0770095B2 (en) 1995-07-31

Family

ID=16197256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61186933A Expired - Fee Related JPH0770095B2 (en) 1986-08-11 1986-08-11 Magneto-optical recording medium

Country Status (1)

Country Link
JP (1) JPH0770095B2 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59103314A (en) * 1982-12-03 1984-06-14 Seiko Instr & Electronics Ltd Photomagnetic recording medium
JPS6153702A (en) * 1984-08-23 1986-03-17 Seiko Instr & Electronics Ltd Photomagnetic recording medium
JPS61121404A (en) * 1984-11-19 1986-06-09 Seiko Instr & Electronics Ltd Light magnetic recording medium

Also Published As

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JPS6344339A (en) 1988-02-25

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